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Eric J. Tonnis, Ph.D. - Publications

Affiliations: 
2000 University of California, Berkeley, Berkeley, CA, United States 
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4/5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 Vartanian V, Goolsby B, Chatterjee R, Kachmarik R, Babbitt D, Reif R, Tonnis EJ, Graves D. Reduction of semiconductor process emissions by reactive gas optimization Ieee Transactions On Semiconductor Manufacturing. 17: 483-490. DOI: 10.1109/TSM.2004.837004  0.523
2002 Tonnis EJ, Graves DB. Neutral gas temperatures measured within a high-density, inductively coupled plasma abatement device Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1787-1795. DOI: 10.1116/1.1503901  0.457
2000 Tonnis EJ, Graves DB, Vartanian VH, Beu L, Lii T, Jewett R. Inductively coupled, point-of-use plasma abatement of perfluorinated compounds and hydrofluorinated compounds from etch processes utilizing O2 and H2O as additive gases Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 393-400. DOI: 10.1116/1.582199  0.479
2000 Vartanian V, Beu L, Lii T, Graves D, Tonnis EJ, Jewett R, Wofford B, Bevan J, Hartz C, Gunn M. Plasma abatement reduces PFC emission Semiconductor International. 23: 191-192, 194, 196, 1.  0.575
Low-probability matches (unlikely to be authored by this person)
2014 Hwang S, Tonnis E. A systematic methodology for etch chamber matching to meet leading edge requirements Asmc (Advanced Semiconductor Manufacturing Conference) Proceedings. 393-396. DOI: 10.1109/ASMC.2014.6846962  0.129
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