Year |
Citation |
Score |
2008 |
Végh JJ, Humbird D, Graves DB. Silicon etch in the presence of a fluorocarbon overlayer: The role of fluorocarbon cluster ejection Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 52-61. DOI: 10.1116/1.2812444 |
0.659 |
|
2005 |
Végh JJ, Humbird D, Graves DB. Silicon etch by fluorocarbon and argon plasmas in the presence of fluorocarbon films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1598-1604. DOI: 10.1116/1.2049304 |
0.67 |
|
2005 |
Humbird D, Graves DB. Atomistic simulations of Ar +M -ion-assisted etching of silicon by fluorine and chlorine Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 31-38. DOI: 10.1116/1.1814106 |
0.665 |
|
2004 |
Humbird D, Graves DB. Improved interatomic potentials for silicon-fluorine and silicon-chlorine. The Journal of Chemical Physics. 120: 2405-12. PMID 15268380 DOI: 10.1063/1.1636722 |
0.658 |
|
2004 |
Humbird D, Graves DB. Molecular dynamics simulations of Si-F surface chemistry with improved interatomic potentials Plasma Sources Science and Technology. 13: 548-552. DOI: 10.1088/0963-0252/13/3/022 |
0.644 |
|
2004 |
Humbird D, Graves DB. Mechanism of silicon etching in the presence of CF 2, F, and Ar + Journal of Applied Physics. 96: 2466-2471. DOI: 10.1063/1.1769602 |
0.671 |
|
2004 |
Humbird D, Graves DB. Atomistic simulations of spontàneous etching of silicon by fluorine and chlorine Journal of Applied Physics. 96: 791-798. DOI: 10.1063/1.1753657 |
0.656 |
|
2004 |
Humbird D, Graves DB. Fluorocarbon plasma etching of silicon: Factors controlling etch rate Journal of Applied Physics. 96: 65-70. DOI: 10.1063/1.1736321 |
0.679 |
|
2004 |
Humbird D, Graves DB, Hua X, Oehrlein GS. Molecular dynamics simulations of Ar +-induced transport of fluorine through fluorocarbon films Applied Physics Letters. 84: 1073-1075. DOI: 10.1063/1.1644338 |
0.672 |
|
2002 |
Humbird D, Graves DB. Ion-induced damage and annealing of silicon. Molecular dynamics simulations Pure and Applied Chemistry. 74: 419-422. DOI: 10.1351/Pac200274030419 |
0.602 |
|
2002 |
Humbird D, Graves DB. Controlling surfaces in plasma processing: Role of ions via molecular dynamics simulations of surface chemistry Plasma Sources Science and Technology. 11: A191-A195. DOI: 10.1088/0963-0252/11/3A/328 |
0.668 |
|
2002 |
Graves DB, Humbird D. Surface chemistry associated with plasma etching processes Applied Surface Science. 192: 72-87. DOI: 10.1016/S0169-4332(02)00021-1 |
0.671 |
|
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