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Jung Han - Publications

Affiliations: 
Electrical Engineering Yale University, New Haven, CT 
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172 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Kang JH, Li B, Zhao T, Johar MA, Lin CC, Fang YH, Kuo WH, Liang KL, Hu S, Ryu SW, Han J. RGB arrays for micro-LED applications using nanoporous GaN embedded with quantum dots. Acs Applied Materials & Interfaces. PMID 32519834 DOI: 10.1021/Acsami.0C00839  0.337
2020 Chen SH, Huang Y, Singh KJ, Hsu Y, Liou F, Song J, Choi J, Lee P, Lin C, Chen Z, Han J, Wu T, Kuo H. Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist Photonics Research. 8: 630. DOI: 10.1364/Prj.388958  0.38
2020 ElAfandy RT, Kang J, Li B, Kim TK, Kwak JS, Han J. Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector Applied Physics Letters. 117: 11101. DOI: 10.1063/5.0012281  0.353
2020 Chen SH, Huang Y, Chang Y, Lin Y, Liou F, Hsu Y, Song J, Choi J, Chow C, Lin C, Horng R, Chen Z, Han J, Wu T, Kuo H. High-bandwidth green semipolar (20-21) InGaN/GaN micro light-emitting diodes for visible light communication Acs Photonics. 7: 2228-2235. DOI: 10.1021/Acsphotonics.0C00764  0.309
2020 Raghothamachar B, Liu Y, Peng H, Ailihumaer T, Dudley M, Shahedipour-Sandvik FS, Jones KA, Armstrong A, Allerman AA, Han J, Fu H, Fu K, Zhao Y. X-ray topography characterization of gallium nitride substrates for power device development Journal of Crystal Growth. 544: 125709. DOI: 10.1016/J.Jcrysgro.2020.125709  0.316
2020 Song J, Choi J, Han J. Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer Journal of Crystal Growth. 536: 125575. DOI: 10.1016/J.Jcrysgro.2020.125575  0.386
2020 Li B, Wang S, Nami M, Han J. A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl) Journal of Crystal Growth. 534: 125492. DOI: 10.1016/J.Jcrysgro.2020.125492  0.346
2020 Song J, Han J. High Quality, Mass‐Producible Semipolar GaN and InGaN Light‐Emitting Diodes Grown on Sapphire Physica Status Solidi B-Basic Solid State Physics. 257: 1900565. DOI: 10.1002/Pssb.201900565  0.319
2019 Song J, Choi J, Zhang C, Deng Z, Xie Y, Han J. Elimination of Stacking Faults in Semipolar GaN and Light-Emitting Diodes Grown on Sapphire. Acs Applied Materials & Interfaces. PMID 31454216 DOI: 10.1021/Acsami.9B11316  0.355
2019 Li B, Nami M, Wang S, Han J. In situ and selective area etching of GaN by tertiarybutylchloride (TBCl) Applied Physics Letters. 115: 162101. DOI: 10.1063/1.5120420  0.341
2019 Zhou T, Zhang C, Elafandy R, Yuan G, Deng Z, Xiong K, Chen FM, Kuo YK, Xu K, Han J. Thermal transport of nanoporous gallium nitride for photonic applications Journal of Applied Physics. 125: 155106. DOI: 10.1063/1.5083151  0.316
2019 Kneissl M, Seong TY, Han J, Amano H. The emergence and prospects of deep-ultraviolet light-emitting diode technologies Nature Photonics. 13: 233-244. DOI: 10.1038/S41566-019-0359-9  0.358
2018 Yuan G, Zhang C, Xiong K, Han J. InGaN/GaN microdisks enabled by nanoporous GaN cladding. Optics Letters. 43: 5567-5570. PMID 30439902 DOI: 10.1364/Ol.43.005567  0.323
2018 Lin CF, Su CL, Wu HM, Chen YY, Huang BS, Huang KL, Shieh BC, Liu HJ, Han J. Bendable InGaN light-emitting nano-membranes with tunable emission wavelength. Acs Applied Materials & Interfaces. PMID 30277061 DOI: 10.1021/Acsami.8B14506  0.383
2018 Feng S, You Y, Huang C, Wang H, Tu L, Song J, Han J. Precursor Duration and Thermal Annealing Effects in InGaN/GaN Multiple Quantum Wells Grown on Nitrogen-Polar GaN Templates by a Pulsed Metallorganic Chemical Vapor Deposition Ecs Journal of Solid State Science and Technology. 7. DOI: 10.1149/2.0051810Jss  0.345
2017 Li Y, Feng L, Su X, Li Q, Yun F, Yuan G, Han J. Whispering gallery mode lasing from InGaN/GaN quantum well microtube. Optics Express. 25: 18072-18080. PMID 28789297 DOI: 10.1364/Oe.25.018072  0.345
2017 Song J, Han J. Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer. Materials (Basel, Switzerland). 10. PMID 28772612 DOI: 10.3390/Ma10030252  0.361
2017 Chang TH, Xiong K, Park SH, Yuan G, Ma Z, Han J. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs. Scientific Reports. 7: 6360. PMID 28743988 DOI: 10.1038/S41598-017-06957-8  0.382
2017 Song J, Choi J, Xiong K, Xie Y, Cha JJ, Han J. Semipolar (20-2-1) GaN and InGaN light emitting diodes grown on sapphire. Acs Applied Materials & Interfaces. PMID 28361536 DOI: 10.1021/Acsami.7B01336  0.411
2017 Chen S, Zhang C, Lee J, Han J, Nurmikko A. High-Q, Low-Threshold Monolithic Perovskite Thin-Film Vertical-Cavity Lasers. Advanced Materials (Deerfield Beach, Fla.). PMID 28211117 DOI: 10.1002/Adma.201604781  0.313
2017 Bruch AW, Xiong K, Jung H, Guo X, Zhang C, Han J, Tang HX. Electrochemically sliced low loss AlGaN optical microresonators Applied Physics Letters. 110: 021111. DOI: 10.1063/1.4973521  0.353
2017 You Y, Feng S, Wang H, Song J, Han J. The effects of indium aggregation in InGaN/GaN single and multiple quantum wells grown on nitrogen-polar GaN templates by a pulsed metalorganic chemical vapor deposition Journal of Luminescence. 182: 196-199. DOI: 10.1016/J.Jlumin.2016.10.039  0.364
2017 Zhang C, Xiong K, Yuan G, Han J. A resonant‐cavity blue–violet light‐emitting diode with conductive nanoporous distributed Bragg reflector Physica Status Solidi (a). 214: 1600866. DOI: 10.1002/Pssa.201600866  0.31
2016 Yang FW, Chen YY, Feng SW, Sun Q, Han J. Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN. Nanoscale Research Letters. 11: 509. PMID 27864818 DOI: 10.1186/S11671-016-1727-8  0.359
2016 Gao HF, Li AN, Yang JJ, Chen ZH, Xie Z, Zhang XC, Su J, Lou NN, Yan HH, Han JF, Wu YL. Soluble c-Met Levels Correlated With Tissue c-Met Protein Expression in Patients With Advanced Non-Small-Cell Lung Cancer. Clinical Lung Cancer. PMID 27461774 DOI: 10.1016/j.cllc.2016.06.008  0.301
2016 Wang Y, Han Y, Han J, Zhang X, Chen Y, Wang S, Wen L, Liu N, Su J, Li L, Gao Y. UV-free red electroluminescence from the cross-connected p-ZnO:Cu nanobushes/n-GaN light emitting diode. Optics Express. 24: 3940-9. PMID 26907047 DOI: 10.1364/Oe.24.003940  0.413
2016 Yuan G, Zhang C, Xiong K, Park S, Han J. New directions in GaN photonics Proceedings of Spie. 9748. DOI: 10.1117/12.2214365  0.353
2016 Yuan G, Xiong K, Zhang C, Li Y, Han J. Optical Engineering of Modal Gain in a III-Nitride Laser with Nanoporous GaN Acs Photonics. 3: 1604-1610. DOI: 10.1021/Acsphotonics.6B00155  0.35
2016 Leung B, Wang D, Kuo YS, Han J. Complete orientational access for semipolar GaN devices on sapphire Physica Status Solidi (B) Basic Research. 253: 23-35. DOI: 10.1002/Pssb.201552301  0.363
2015 Lei YY, Yang JJ, Zhang XC, Zhong WZ, Zhou Q, Tu HY, Tian HX, Guo WB, Yang LL, Yan HH, Chen HJ, Xie Z, Su J, Han JF, Wu YL. Anaplastic Lymphoma Kinase Variants and the Percentage of ALK-Positive Tumor Cells and the Efficacy of Crizotinib in Advanced NSCLC. Clinical Lung Cancer. PMID 26454342 DOI: 10.1016/j.cllc.2015.09.002  0.303
2015 Song J, Chang SP, Zhang C, Hsu TC, Han J. Significantly improved luminescence properties of nitrogen-polar (0001̅) InGaN multiple quantum wells grown by pulsed metalorganic chemical vapor deposition. Acs Applied Materials & Interfaces. 7: 273-8. PMID 25494953 DOI: 10.1021/Am506162Z  0.369
2015 Bruch AW, Xiong C, Leung B, Poot M, Han J, Tang HX. Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films Applied Physics Letters. 107. DOI: 10.1063/1.4933093  0.357
2015 Feng SW, Liao PH, Leung B, Han J, Yang FW, Wang HC. Efficient carrier relaxation and fast carrier recombination of N -polar InGaN/GaN light emitting diodes Journal of Applied Physics. 118. DOI: 10.1063/1.4927421  0.354
2015 Schwab MJ, Han J, Pfefferle LD. Neutral anodic etching of GaN for vertical or crystallographic alignment Applied Physics Letters. 106: 241603. DOI: 10.1063/1.4922702  0.334
2015 Aagesen LK, Coltrin ME, Han J, Thornton K. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries Journal of Applied Physics. 117: 194302. DOI: 10.1063/1.4921053  0.328
2015 Zhang C, Park SH, Chen D, Lin DW, Xiong W, Kuo HC, Lin CF, Cao H, Han J. Mesoporous GaN for Photonic Engineering-Highly Reflective GaN Mirrors as an Example Acs Photonics. 2: 980-986. DOI: 10.1021/Acsphotonics.5B00216  0.35
2015 Leung B, Tsai MC, Song J, Zhang Y, Xiong K, Yuan G, Coltrin ME, Han J. Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2 Journal of Crystal Growth. 426: 95-102. DOI: 10.1016/J.Jcrysgro.2015.03.049  0.346
2015 Song J, Chen D, Han J. Understanding of the mechanism of pulsed NH3 growth in metalorganic chemical vapor deposition Journal of Crystal Growth. 415: 127-131. DOI: 10.1016/J.Jcrysgro.2014.12.041  0.33
2015 Song J, Chen D, Leung B, Zhang Y, Han J. Single Crystalline GaN Tiles Grown on Si (111) Substrates by Confined Lateral Guided Growth to Eliminate Wafer Bowing Advanced Materials Interfaces. 2: 1500014. DOI: 10.1002/Admi.201500014  0.374
2014 Lin CF, Lee WC, Shieh BC, Chen D, Wang D, Han J. Fabrication of current confinement aperture structure by transforming a conductive GaN:Si epitaxial layer into an insulating GaOx layer. Acs Applied Materials & Interfaces. 6: 22235-42. PMID 25470494 DOI: 10.1021/Am505988R  0.378
2014 Park SH, Yuan G, Chen D, Xiong K, Song J, Leung B, Han J. Wide bandgap III-nitride nanomembranes for optoelectronic applications. Nano Letters. 14: 4293-8. PMID 24987800 DOI: 10.1021/Nl5009629  0.406
2014 Ko YH, Song J, Leung B, Han J, Cho YH. Multi-color broadband visible light source via GaN hexagonal annular structure. Scientific Reports. 4: 5514. PMID 24981889 DOI: 10.1038/Srep05514  0.354
2014 Song J, Leung B, Zhang Y, Han J. Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition. Nanotechnology. 25: 225602. PMID 24807561 DOI: 10.1088/0957-4484/25/22/225602  0.409
2014 Lin CF, Tseng YH, Lee WC, Hsu WJ, Chen YL, Park SH, Han J. Fabrication of InGaN light-emitting diodes with embedded air-gap disks using laser-drilling and electrochemical processes Applied Physics Express. 7: 76501. DOI: 10.7567/Apex.7.076501  0.335
2014 Leung B, Song J, Zhang Y, Tsai M, Yuan G, Han J. Using the Evolutionary Selection Principle in Selective Area Growth to Achieve Single-Crystalline GaN on SiO2 International Journal of High Speed Electronics and Systems. 23: 1450003. DOI: 10.1142/S0129156414500037  0.344
2014 Yuan G, Park SH, Leung B, Han J. New directions in GaN material research: thinner and smaller Proceedings of Spie. 8986. DOI: 10.1117/12.2040729  0.355
2014 Han J, Amano H, Schowalter L. Deep UV LEDs Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/8/080301  0.329
2014 Huang KP, Wu KC, Cheng PF, Tseng WP, Shieh BC, Lin CF, Leung B, Han J. InGaN light-emitting diodes with band-pass-filter-like GaN : Si nanoporous structures Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/14/145101  0.359
2014 Leung B, Wang D, Kuo YS, Xiong K, Song J, Chen D, Park SH, Hong SY, Choi JW, Han J. Semipolar (20 2¯1) GaN and InGaN quantum wells on sapphire substrates Applied Physics Letters. 104: 262105. DOI: 10.1063/1.4886578  0.408
2014 Song J, Yuan G, Xiong K, Leung B, Han J. Epitaxial Lateral Overgrowth of Nitrogen-Polar (0001̅) GaN by Metalorganic Chemical Vapor Deposition Crystal Growth & Design. 14: 2510-2515. DOI: 10.1021/Cg500229R  0.319
2014 Lin C, Wang J, Cheng P, Tseng W, Fan F, Wu K, Lee W, Han J. Current steering effect of GaN nanoporous structure Thin Solid Films. 570: 293-297. DOI: 10.1016/J.Tsf.2014.02.039  0.36
2014 Leung B, Han J, Sun Q. Strain relaxation and dislocation reduction in AlGaN step‐graded buffer for crack‐free GaN on Si (111) Physica Status Solidi (C). 11: 437-441. DOI: 10.1002/Pssc.201300690  0.335
2014 Xiong K, Park SH, Song J, Yuan G, Chen D, Leung B, Han J. Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor Advanced Functional Materials. 24: 6503-6508. DOI: 10.1002/Adfm.201401438  0.349
2013 Feng SW, Chen YY, Lai CM, Tu LW, Han J. Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate Journal of Applied Physics. 114. DOI: 10.1063/1.4851755  0.334
2013 Schwab MJ, Chen D, Han J, Pfefferle LD. Aligned Mesopore Arrays in GaN by Anodic Etching and Photoelectrochemical Surface Etching The Journal of Physical Chemistry C. 117: 16890-16895. DOI: 10.1021/Jp401890D  0.342
2013 Seong TY, Han J, Amano H, Morkoç H. III-Nitride Based Light Emitting Diodes and Applications Topics in Applied Physics. 133. DOI: 10.1007/978-981-10-3755-9  0.339
2012 Dang C, Lee J, Zhang Y, Han J, Breen C, Steckel JS, Coe-Sullivan S, Nurmikko A. A wafer-level integrated white-light-emitting diode incorporating colloidal quantum dots as a nanocomposite luminescent material. Advanced Materials (Deerfield Beach, Fla.). 24: 5915-8. PMID 22927319 DOI: 10.1002/Adma.201202354  0.35
2012 Leung B, Zhang Y, Yerino CD, Han J, Sun Q, Chen Z, Lester S, Liao KY, Li YL. Optical emission characteristics of semipolar (1 1 2̄ 2) GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/2/024016  0.399
2012 Leung B, Sun Q, Yerino CD, Han J, Coltrin ME. Using the kinetic Wulff plot to design and control nonpolar and semipolar GaN heteroepitaxy Semiconductor Science and Technology. 27: 24005. DOI: 10.1088/0268-1242/27/2/024005  0.357
2012 Han J, Kneissl M. Non-polar and semipolar nitride semiconductors Semiconductor Science and Technology. 27: 20301. DOI: 10.1088/0268-1242/27/2/020301  0.361
2012 Chen D, Han J. High reflectance membrane-based distributed Bragg reflectors for GaN photonics Applied Physics Letters. 101: 221104. DOI: 10.1063/1.4768806  0.362
2012 Chen D, Xiao H, Han J. Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism Journal of Applied Physics. 112: 64303. DOI: 10.1063/1.4752259  0.325
2012 Zhang Y, Leung B, Han J. A liftoff process of GaN layers and devices through nanoporous transformation Applied Physics Letters. 100: 181908. DOI: 10.1063/1.4711218  0.356
2012 Leung B, Sun Q, Yerino C, Zhang Y, Han J, Hyun Kong B, Koun Cho H, Liao KY, Li YL. Growth evolution and microstructural characterization of semipolar (1122) GaN selectively grown on etched r-plane sapphire Journal of Crystal Growth. 341: 27-33. DOI: 10.1016/J.Jcrysgro.2011.12.035  0.351
2011 Zhang Y, Sun Q, Leung B, Simon J, Lee ML, Han J. The fabrication of large-area, free-standing GaN by a novel nanoetching process. Nanotechnology. 22: 045603. PMID 21169658 DOI: 10.1088/0957-4484/22/4/045603  0.347
2011 Kwon S-, Sun Q, Kwak J, Seo H-, Han J. Growth of cubic InN on GaP(1 0 0) with GaN buffer by metalorganic chemical vapour deposition Journal of Physics D. 44: 285403. DOI: 10.1088/0022-3727/44/28/285403  0.351
2011 Sun Q, Yerino CD, Leung B, Han J, Coltrin ME. Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN Journal of Applied Physics. 110: 53517. DOI: 10.1063/1.3632073  0.309
2011 Yerino CD, Zhang Y, Leung B, Lee ML, Hsu TC, Wang CK, Peng WC, Han J. Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes Applied Physics Letters. 98: 251910. DOI: 10.1063/1.3601861  0.36
2011 Polyakov AY, Smirnov NB, Govorkov AV, Amano H, Pearton SJ, Lee I, Sun Q, Han J, Karpov SY. Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency Applied Physics Letters. 98: 072104. DOI: 10.1063/1.3555470  0.347
2011 Dang C, Zhang Y, Han J, Nurmikko A, Breen C, Steckel JS, Coe-Sullivan S. A wavelength engineered emitter incorporating CdSe-based colloidal quantum dots into nanoporous InGaN/GaN multiple quantum well matrix Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2337-2339. DOI: 10.1002/Pssc.201001185  0.355
2010 Polyakov AY, Markov AV, Mezhennyi MV, Donskov AA, Malakhov SS, Govorkov AV, Kozlova YP, Pavlov VF, Smirnov NB, Yugova TG, Lee I, Han J, Sun Q, Pearton SJ. a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 1039-1043. DOI: 10.1116/1.3491187  0.369
2010 Kim H, Guan ZL, Sun Q, Kahn A, Han J, Nurmikko A. Surface and interface states of gallium-polar versus nitrogen-polar GaN: Impact of thin organic semiconductor overlayers Journal of Applied Physics. 107. DOI: 10.1063/1.3372559  0.331
2010 Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Sun Q, Zhang Y, Yerino CD, Ko T-, Lee I-, Han J. Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire Materials Science and Engineering B-Advanced Functional Solid-State Materials. 166: 220-224. DOI: 10.1016/J.Mseb.2009.11.030  0.324
2010 Polyakov AY, Smirnov NB, Govorkov AV, Sun Q, Zhang Y, Cho YS, Lee I-, Han J. Electrical and luminescent properties and deep traps spectra of N-polar GaN films Materials Science and Engineering B-Advanced Functional Solid-State Materials. 166: 83-88. DOI: 10.1016/J.Mseb.2009.10.011  0.33
2010 Zhang Y, Ryu S, Yerino C, Leung B, Sun Q, Song Q, Cao H, Han J. A conductivity-based selective etching for next generation GaN devices Physica Status Solidi (B). 247: 1713-1716. DOI: 10.1002/Pssb.200983650  0.368
2009 Wang Y, Chu B, Chang C, Chen KH, Zhang Y, Sun Q, Han J, Pearton S, Ren F. High Sensitivity of Hydrogen Sensing Through N-polar GaN Schottky Diodes Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-06  0.343
2009 Sun Q, Ko T, Yerino CD, Zhang Y, Lee IH, Han J, Lu TC, Kuo HC, Wang SC. Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction Japanese Journal of Applied Physics. 48: 71002. DOI: 10.1143/Jjap.48.071002  0.319
2009 Sun Q, Yerino CD, Leung B, Han J. Epitaxial science of GaN: nanowires, quantum dots, and mesoscopic morphology Proceedings of Spie. 7406. DOI: 10.1117/12.829140  0.386
2009 Sun Q, Kong BH, Yerino CD, Ko T, Leung B, Cho HK, Han J. Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire Journal of Applied Physics. 106: 123519. DOI: 10.1063/1.3272790  0.349
2009 Sun Q, Leung B, Yerino CD, Zhang Y, Han J. Improving microstructural quality of semipolar (112̱2) GaN on m-plane sapphire by a two-step growth process Applied Physics Letters. 95: 231904. DOI: 10.1063/1.3269605  0.353
2009 Chang CY, Wang Y, Gila BP, Gerger AP, Pearton SJ, Lo CF, Ren F, Sun Q, Zhang Y, Han J. Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors Applied Physics Letters. 95: 082110. DOI: 10.1063/1.3216576  0.348
2009 Wang Y, Ren F, Zhang U, Sun Q, Yerino CD, Ko TS, Cho YS, Lee IH, Han J, Pearton SJ. Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes Applied Physics Letters. 94: 212108. DOI: 10.1063/1.3148369  0.336
2009 Feng S, Han J. Quantum-confinement effect on recombination dynamics and carrier localization in cubic InN and InxGa1-xN quantum boxes Thin Solid Films. 517: 3315-3319. DOI: 10.1016/J.Tsf.2008.11.145  0.308
2009 Wang Y, Chu B, Chang C, Chen K, Zhang Y, Sun Q, Han J, Pearton S, Ren F. Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes Sensors and Actuators B: Chemical. 142: 175-178. DOI: 10.1016/J.Snb.2009.07.040  0.323
2009 Sun Q, Yerino CD, Zhang Y, Cho YS, Kwon SY, Kong BH, Cho HK, Lee IH, Han J. Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition Journal of Crystal Growth. 311: 3824-3829. DOI: 10.1016/J.Jcrysgro.2009.06.035  0.321
2009 Sun Q, Cho YS, Kong BH, Cho HK, Ko TS, Yerino CD, Lee I, Han J. N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition Journal of Crystal Growth. 311: 2948-2952. DOI: 10.1016/J.Jcrysgro.2009.01.059  0.353
2009 Kim H, Zhang Q, Song YK, Nurmikko A, Sun Q, Han J. Nitride-organic hybrid heterostructures for possible novel optoelectronic devices: Charge injection and transport Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 593-595. DOI: 10.1002/Pssc.200880402  0.334
2008 Yan LH, Song F, Han J, Su J, Qu FF, Song YZ, Hu BL, Tian JG. [Fluorescence spectra analysis of the scrophularia soup]. Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu. 28: 1891-4. PMID 18975827  0.346
2008 Sun Q, Yerino CD, Ko TS, Cho YS, Lee I, Han J, Coltrin ME. Understanding nonpolar GaN growth through kinetic Wulff plots Journal of Applied Physics. 104: 93523. DOI: 10.1063/1.3009969  0.326
2008 Sun Q, Cho YS, Lee I-, Han J, Kong BH, Cho HK. Nitrogen-polar GaN growth evolution on c-plane sapphire Applied Physics Letters. 93: 131912. DOI: 10.1063/1.2993333  0.358
2008 Cho YS, Sun Q, Lee I-, Ko T-, Yerino CD, Han J, Kong BH, Cho HK, Wang S. Reduction of stacking fault density in m-plane GaN grown on SiC Applied Physics Letters. 93: 111904. DOI: 10.1063/1.2985816  0.309
2008 Sun Q, Kwon S, Ren Z, Han J, Onuma T, Chichibu SF, Wang S. Microstructural evolution in m-plane GaN growth on m-plane SiC Applied Physics Letters. 92: 51112. DOI: 10.1063/1.2841671  0.324
2007 Henry T, Kim K, Ren Z, Yerino C, Han J, Tang HX. Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator arrays. Nano Letters. 7: 3315-9. PMID 17941678 DOI: 10.1021/Nl071530X  0.31
2007 Ren Z, Sun Q, Kwon SY, Han J, Davitt K, Song YK, Nurmikko AV, Cho HK, Liu W, Smart JA, Schowalter LJ. Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes Applied Physics Letters. 91. DOI: 10.1063/1.2766841  0.373
2007 Kim H, Dang C, Song YK, Zhang Q, Patterson W, Nurmikko AV, Kim KK, Song SY, Han J. Nitride-organic semiconductor hybrid heterostructures for optoelectronic devices Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2411-2414. DOI: 10.1002/Pssc.200674924  0.308
2007 Ren Z, Sun Q, Kwon SY, Han J, Davitt K, Song YK, Nurmikko AV, Liu W, Smart J, Schowalter L. AlGaN deep ultraviolet LEDs on bulk AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2482-2485. DOI: 10.1002/Pssc.200674758  0.411
2007 Kim K, Henry T, Cui G, Han J, Song YK, Nurmikko AV, Tang H. Epitaxial growth of aligned GaN nanowires and nanobridges Physica Status Solidi (B) Basic Research. 244: 1810-1814. DOI: 10.1002/Pssb.200674843  0.38
2007 Davitt K, Song YK, Patterson W, Nurmikko AV, Ren Z, Sun Q, Han J. UV LED arrays at 280 and 340 nm for spectroscopic biosensing Physica Status Solidi (a) Applications and Materials Science. 204: 2112-2116. DOI: 10.1002/Pssa.200674925  0.335
2006 Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, ... ... Han J, et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials. 5: 810-6. PMID 16951678 DOI: 10.1038/Nmat1726  0.364
2006 Guo P, Ren ZY, Yang AP, Han JG, Bian J, Wang GH. Relativistic computational investigation: the geometries and electronic properties of TaSi(n)+ (n = 1-13, 16) clusters. The Journal of Physical Chemistry. A. 110: 7453-60. PMID 16759135 DOI: 10.1021/jp060130f  0.435
2006 Zhao RN, Ren ZY, Guo P, Bai JT, Zhang CH, Han JG. Geometries and electronic properties of the neutral and charged rare earth Yb-doped Si(n) (n = 1-6) clusters: a relativistic density functional investigation. The Journal of Physical Chemistry. A. 110: 4071-9. PMID 16539431 DOI: 10.1021/jp055551w  0.452
2006 Davitt K, Song YK, Patterson WR, Nurmikko AV, Pan YL, Chang RK, Han J, Gherasimova M, Cobler PJ, Butler PD, Palermo V. Spectroscopic sorting of aerosols by a compact sensor employing UV LEDs Aerosol Science and Technology. 40: 1047-1051. DOI: 10.1080/02786820600936774  0.668
2006 Zhou L, Epler JE, Krames MR, Goetz W, Gherasimova M, Ren Z, Han J, Kneissl M, Johnson NM. Vertical injection thin-film AlGaN/AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes Applied Physics Letters. 89. DOI: 10.1063/1.2408643  0.724
2005 Davitt K, Song YK, Patterson Iii W, Nurmikko A, Gherasimova M, Han J, Pan YL, Chang R. 290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles. Optics Express. 13: 9548-55. PMID 19503158 DOI: 10.1364/Opex.13.009548  0.697
2005 Han J, Kim K, Su J, Gherasimova M, Nurmikko A, Chichibu SF, Broadbridge C. MOCVD Growth and Characterization of AlGaInN Nanowires and Nanostructures Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff31-01  0.716
2005 Su J, Gherasimova M, Cui G, Tsukamoto H, Han J, Onuma T, Kurimoto M, Chichibu SF, Broadbridge C, He Y, Nurmikko AV. Growth of AlGaN nanowires by metalorganic chemical vapor deposition Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2126113  0.708
2005 Su J, Cui G, Gherasimova M, Tsukamoto H, Han J, Ciuparu D, Lim S, Pfefferle L, He Y, Nurmikko AV, Broadbridge C, Lehman A. Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition Applied Physics Letters. 86: 013105-1-013105-3. DOI: 10.1063/1.1843281  0.687
2005 Ren ZY, Li F, Guo P, Han JG. A computational investigation of the Ni-doped Sin(n=1-8) clusters by a density functional method Journal of Molecular Structure: Theochem. 718: 165-173. DOI: 10.1016/j.theochem.2005.01.005  0.44
2004 Guo P, Ren ZY, Wang F, Bian J, Han JG, Wang GH. Structural and electronic properties of TaSi(n) (n=1-13) clusters: a relativistic density functional investigation. The Journal of Chemical Physics. 121: 12265-75. PMID 15606244 DOI: 10.1063/1.1809609  0.442
2004 Jeon SR, Gherasimova M, Ren Z, Su J, Cui G, Han J, Peng H, Song YK, Nurmikko AV, Zhou L, Goetz W, Krames M. High performance AlGaInN ultraviolet light-emitting diode at the 340 nm wavelength Japanese Journal of Applied Physics, Part 2: Letters. 43: L1409-L1412. DOI: 10.1143/Jjap.43.L1409  0.736
2004 Gherasimova M, Cui G, Jeon SR, Ren Z, Martos D, Han J, He Y, Nurmikko AV. Droplet heteroepitaxy of GaN quantum dots by metal-organic chemical vapor deposition Applied Physics Letters. 85: 2346-2348. DOI: 10.1063/1.1793343  0.693
2004 Peng H, Makarona E, He Y, Song YK, Nurmikko AV, Su J, Ren Z, Gherasimova M, Jeon SR, Cui G, Han J. Ultraviolet light-emitting diodes operating in the 340 nm wavelength range and application to time-resolved fluorescence spectroscopy Applied Physics Letters. 85: 1436-1438. DOI: 10.1063/1.1784537  0.713
2004 He Y, Song YK, Nurmikko AV, Su J, Gherasimova M, Cui G, Han J. Optically pumped ultraviolet AlGainN quantum well laser at 340 nm wavelength Applied Physics Letters. 84: 463-465. DOI: 10.1063/1.1637960  0.708
2004 Han JG, Ren ZY, Lu BZ. Geometries and stabilities of re-doped Si n (n = 1-12) clusters: A density functional investigation Journal of Physical Chemistry A. 108: 5100-5110. DOI: 10.1021/jp031006o  0.454
2004 Han JG, Ren ZY, Zhang YW. A computational investigation on Ge nCl - and Ge nCl (n = 1-6) clusters by density functional methods Chemical Physics. 305: 253-258. DOI: 10.1016/j.chemphys.2004.06.057  0.455
2004 Song YK, Nurmikko AV, Gherasimova M, Jeon SR, Han J. Versatile ultraviolet light emitting diodes for sensor applications Physica Status Solidi (a) Applied Research. 201: 2721-2725. DOI: 10.1002/Pssa.200405122  0.706
2003 Fang Z, Look DC, Wang X, Han J, Khan FA, Adesida I. Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition Applied Physics Letters. 82: 1562-1564. DOI: 10.1063/1.1560562  0.304
2002 Nurmikko A, Han J. Blue and near-ultraviolet vertical-cavity surface-emitting lasers Mrs Bulletin. 27: 502-506. DOI: 10.1557/Mrs2002.167  0.33
2002 Daly BC, Maris HJ, Nurmikko AV, Kuball M, Han J. Optical pump-and-probe measurement of the thermal conductivity of nitride thin films Journal of Applied Physics. 92: 3820-3824. DOI: 10.1063/1.1505995  0.329
2002 Luo B, Johnson JW, Kim J, Mehandru RM, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Baca AG, Briggs RD, Shul RJ, Monier C, Han J. Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 80: 1661-1663. DOI: 10.1063/1.1455692  0.333
2002 Johnson JW, Ren F, Baca AG, Briggs RD, Shul RJ, Monier C, Han J, Pearton SJ. MOCVD-grown HEMTs on Al2O3 substrates Solid-State Electronics. 46: 1193-1204. DOI: 10.1016/S0038-1101(02)00014-X  0.321
2002 Johnson JW, Han J, Baca AG, Briggs RD, Shul RJ, Wendt JR, Monier C, Ren F, Luo B, Chu SNG, Tsvetkov D, Dmitriev V, Pearton SJ. Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire Solid-State Electronics. 46: 513-523. DOI: 10.1016/S0038-1101(01)00284-2  0.353
2002 Zhang A, Dang G, Ren F, Han J, Monier C, Baca A, Cao X, Cho H, Abernathy C, Pearton S. GaN pnp bipolar junction transistors operated to 250 °C Solid-State Electronics. 46: 933-936. DOI: 10.1016/S0038-1101(01)00279-9  0.308
2001 Monier C, Ren F, Han J, Chang P, Shul RJ, Lee K, Zhang A, Baca AG, Pearton S. Simulation of npn and pnp AlGaN/GaN heterojunction bipolar transistors performances: limiting factors and optimum design Ieee Transactions On Electron Devices. 48: 427-432. DOI: 10.1109/16.906431  0.321
2001 Zhang AP, Luo B, Johnson JW, Ren F, Han J, Pearton SJ. Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices Applied Physics Letters. 79: 3636-3638. DOI: 10.1063/1.1423387  0.304
2001 Diagne M, He Y, Zhou H, Makarona E, Nurmikko AV, Han J, Waldrip KE, Figiel JJ, Takeuchi T, Krames M. Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction Applied Physics Letters. 79: 3720-3722. DOI: 10.1063/1.1415405  0.399
2001 Waldrip KE, Han J, Figiel JJ, Zhou H, Makarona E, Nurmikko AV. Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors Applied Physics Letters. 78: 3205-3207. DOI: 10.1063/1.1371240  0.334
2001 Zhang AP, Johnson JW, Ren F, Han J, Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM, Lee KP, Pearton SJ. Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage Applied Physics Letters. 78: 823-825. DOI: 10.1063/1.1346622  0.321
2001 Han J, Nurmikko AV. Progress towards nitride blue and near-UV VCSELs Iii-Vs Review. 14: 38-41. DOI: 10.1016/S0961-1290(01)89006-2  0.36
2001 Mitchell CC, Coltrin ME, Han J. Mass transport in the epitaxial lateral overgrowth of gallium nitride Journal of Crystal Growth. 222: 144-153. DOI: 10.1016/S0022-0248(00)00874-5  0.329
2001 Diagne M, He Y, Zhou H, Makarona E, Nurmikko AV, Han J, Takeuchi T, Krames M. A High Injection Resonant Cavity Violet Light Emitting Diode Incorporating (Al,Ga)N Distributed Bragg Reflector Physica Status Solidi (a) Applied Research. 188: 105-108. DOI: 10.1002/1521-396X(200111)188:1<105::Aid-Pssa105>3.0.Co;2-8  0.378
2000 Han J, Figiel JJ, Petersen GA, Myers SM, Crawford MH, Banas MA, Hearne SJ. MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics Mrs Internet Journal of Nitride Semiconductor Research. 5: 412-424. DOI: 10.1557/S1092578300004580  0.301
2000 Zhang A, Dang G, Ren F, Han J, Monier C, Baca A, Cao X, Cho H, Abernathy C, Pearton S. GaN pnp Bipolar Junction Transistors Operated to 250°C Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T3.2.1  0.318
2000 Han J, Figiel JJ, Petersen GA, Myers SM, Crawford MH, Banas MA. Metal-Organic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN Japanese Journal of Applied Physics. 39: 2372-2375. DOI: 10.1143/Jjap.39.2372  0.397
2000 Crawford MH, Han J, Chow WW, Banas MA, Figiel JJ, Zhang L, Shul RJ. Design and performance of nitride-based UV LEDs Mrs Proceedings. 622: 13-23. DOI: 10.1117/12.382842  0.392
2000 Ashby CIH, Mitchell CC, Han J, Missert NA, Provencio PP, Follstaedt DM, Peake GM, Griego L. Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate Applied Physics Letters. 77: 3233-3235. DOI: 10.1063/1.1325394  0.355
2000 Zhang AP, Dang G, Ren F, Han J, Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM, Cho H, Pearton SJ. Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers Applied Physics Letters. 76: 3816-3818. DOI: 10.1063/1.126791  0.324
2000 Zhang AP, Dang GT, Ren F, Han J, Baca AG, Shul RJ, Cho H, Monier C, Cao XA, Abernathy CR, Pearton SJ. Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors Applied Physics Letters. 76: 2943-2945. DOI: 10.1063/1.126524  0.326
2000 Zhang AP, Dang G, Ren F, Han J, Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM, Cao XA, Pearton SJ. Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers Applied Physics Letters. 76: 1767-1769. DOI: 10.1063/1.126161  0.336
2000 Zhou H, Diagne M, Makarona E, Nurmikko AV, Han J, Waldrip KE, Figiel JJ. Near ultraviolet optically pumped vertical cavity laser Electronics Letters. 36: 1777-1779. DOI: 10.1049/El:20001257  0.337
2000 Theodoropoulos C, Mountziaris T, Moffat H, Han J. Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy Journal of Crystal Growth. 217: 65-81. DOI: 10.1016/S0022-0248(00)00402-4  0.306
1999 Han J, Crawford MH. OMVPE Growth of AlGaInN for UV Light Emitters The Japan Society of Applied Physics. 1999: 46-47. DOI: 10.7567/Ssdm.1999.C-1-1  0.331
1999 Han J, Figiel JJ, Petersen GA, Myers SM, Crawford MH, Banas MA, Hearne SJ. MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W6.2  0.388
1999 Coltrin ME, Willan CC, Bartram ME, Han J, Missert N, Crawford MH, Baca AG. Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth Mrs Internet Journal of Nitride Semiconductor Research. 537: 588-593. DOI: 10.1557/Proc-537-G6.9  0.357
1999 Han J, Baca AG, Shul RJ, Willison CG, Zhang L, Ren F, Zhang AP, Dang GT, Donovan SM, Cao XA, Cho H, Jung KB, Abernathy CR, Pearton SJ, Wilson RG. Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor Applied Physics Letters. 74: 2702-2704. DOI: 10.1063/1.123942  0.355
1998 Amano H, Iwaya M, Kashima T, Katsuragawa M, Akasaki I, Han J, Hearne S, Floro JA, Chason E, Figiel J. Stress and Defect Control in GaN Using Low Temperature Interlayers Japanese Journal of Applied Physics. 37. DOI: 10.1143/Jjap.37.L1540  0.303
1998 Han J, Crawford MH, Shul RJ, Figiel JJ, Banas M, Zhang L, Song YK, Zhou H, Nurmikko AV. AlGaN/GaN quantum well ultraviolet light emitting diodes Applied Physics Letters. 73: 1688-1690. DOI: 10.1063/1.122246  0.413
1998 Cao XA, Abernathy CR, Singh RK, Pearton SJ, Fu M, Sarvepalli V, Sekhar JA, Zolper JC, Rieger DJ, Han J, Drummond TJ, Shul RJ, Wilson RG. Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system Applied Physics Letters. 73: 229-231. DOI: 10.1063/1.121764  0.309
1998 Han J, Figiel JJ, Crawford MH, Banas MA, Bartram ME, Biefeld RM, Song YK, Nurmikko AV. OMVPE growth and gas-phase reactions of AlGaN for UV emitters Journal of Crystal Growth. 195: 291-296. DOI: 10.1016/S0022-0248(98)00675-7  0.345
1997 Han J, Ng T-, Biefeld RM, Crawford MH, Follstaedt DM. The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition Applied Physics Letters. 71: 3114-3116. DOI: 10.1063/1.120263  0.33
1997 Song YK, Nurmikko AV, Schmiedel T, Chu CC, Han J, Chen WL, Gunshor RL. Spectroscopy of a ZnCdSe/ZnSSe quantum well diode laser in high magnetic fields Applied Physics Letters. 71: 2874-2876. DOI: 10.1063/1.120202  0.306
1996 Chu CC, Ng TB, Han J, Hua GC, Gunshor RL, Ho E, Warlick EL, Kolodziejski LA, Nurmikko AV. Reduction of structural defects in II–VI blue green laser diodes Applied Physics Letters. 69: 602-604. DOI: 10.1063/1.117920  0.316
1996 Nurmikko AV, Jeon H, Gunshor RL, Han J. II–VI lasers — new directions Journal of Crystal Growth. 159: 644-652. DOI: 10.1016/0022-0248(95)00838-1  0.303
1995 Hovinen M, Ding J, Salokatve A, Nurmikko AV, Hua GC, Grillo DC, He L, Han J, Ringle M, Gunshor RL. On degradation of ZnSe-based blue-green diode lasers Journal of Applied Physics. 77: 4150-4152. DOI: 10.1063/1.359507  0.313
1995 Hovinen M, Ding J, Nurmikko AV, Hua GC, Grillo DC, He L, Han J, Gunshor RL. Degradation of (Zn,Cd)Se quantum well heterostructures for blue/green light emitters under high optical injection Applied Physics Letters. 66: 2013-2015. DOI: 10.1063/1.113676  0.364
1995 Han J, Gunshor RL, Nurmikko AV. Ohmic contact and transport properties of II-VI Green/Blue laser diodes Journal of Electronic Materials. 24: 151-154. DOI: 10.1007/Bf02659888  0.301
1995 Han J, Gunshor RL, Nurmikko AV. MBE of ZnSe Alloys to Achieve Room Temperature CW Laser Diodes Physica Status Solidi B-Basic Solid State Physics. 187: 285-290. DOI: 10.1002/Pssb.2221870204  0.36
1994 Han J, He L, Gunshor RL, Nurrnikko AV. Blue/Green Lasers Focus on the Market Ieee Circuits and Devices Magazine. 10: 18-23. DOI: 10.1109/101.268861  0.307
1994 Kozlov V, Salokatve A, Nurmikko AV, Grillo DC, He L, Han J, Fan Y, Ringle M, Gunshor RL. Gain characteristics of blue/green II-VI quantum well diode lasers Applied Physics Letters. 65: 1863-1864. DOI: 10.1063/1.112864  0.354
1994 Fan Y, Han J, He L, Gunshor RL, Brandt MS, Walker J, Johnson NM, Nurmikko AV. Observations on the limits to p-type doping in ZnSe Applied Physics Letters. 65: 1001-1003. DOI: 10.1063/1.112205  0.302
1994 Hua GC, Otsuka N, Grillo DC, Fan Y, Han J, Ringle MD, Gunshor RL, Hovinen M, Nurmikko AV. Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue-green laser diode Applied Physics Letters. 65: 1331-1333. DOI: 10.1063/1.112042  0.345
1993 Fan Y, Han J, He L, Saraie J, Gunshor RL, Hagerott MM, Nurmikko AV. Transport study of ZnSe:N employing Zn(Se,Te) graded contacts Applied Physics Letters. 63: 1812-1814. DOI: 10.1063/1.110671  0.341
1993 Ding J, Nurmikko AV, Grillo DC, He L, Han J, Gunshor RL. Photoluminescence in ZnSe-based quantum well wire structures Applied Physics Letters. 63: 2254-2256. DOI: 10.1063/1.110544  0.327
1993 Grillo DC, Fan Y, Han J, He L, Gunshor RL, Salokatve A, Hagerott M, Jeon H, Nurmikko AV, Hua GC, Otsuka N. Pseudomorphic separate confinement heterostructure blue-green diode lasers Applied Physics Letters. 63: 2723-2725. DOI: 10.1063/1.110366  0.359
1993 Hovinen M, Ding J, Nurmikko AV, Grillo DC, Han J, He L, Gunshor RL. Blue-green laser emission from ZnSe quantum well microresonators Applied Physics Letters. 63: 3128-3130. DOI: 10.1063/1.110225  0.328
1993 Hagerott M, Ding J, Jeon H, Nurmikko AV, Fan Y, He L, Han J, Saraie J, Gunshor RL, Hua CG, Otsuka N. Green/yellow light emitting diodes from isoelectronically doped ZnSe quantum well structures Applied Physics Letters. 62: 2108-2110. DOI: 10.1063/1.109467  0.345
1993 Han J, Stavrinides TS, Kobayashi M, Gunshor RL, Hagerott MM, Nurmikko AV. Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source Applied Physics Letters. 62: 840-842. DOI: 10.1063/1.108568  0.347
1993 Salokatve A, Jeon H, Ding J, Hovinen M, Nurmikko AV, Grillo DC, He L, Han J, Fan Y, Ringle M, Gunshor RL, Hua GC, Otsuka N. Continuous-wave, room temperature, ridge waveguide green-blue diode laser Electronics Letters. 29: 2192-2194. DOI: 10.1049/El:19931473  0.309
1992 Fan Y, Han J, He L, Saraie J, Gunshor RL, Hagerott M, Jeon H, Nurmikko AV, Hua GC, Otsuka N. Graded band gap ohmic contact to p-ZnSe Applied Physics Letters. 61: 3160-3162. DOI: 10.1063/1.107945  0.334
1991 Han J, Durbin SM, Gunshor RL, Kobayashi M, Menke DR, Pelekanos N, Hagerott M, Nurmikko AV, Nakamura Y, Otsuka N. Quantum wells with zincblende MnTe barriers Journal of Crystal Growth. 111: 767-771. DOI: 10.1016/0022-0248(91)91078-O  0.338
1990 Pelekanos N, Fu Q, Ding J, Wałecki W, Nurmikko AV, Durbin SM, Han J, Kobayashi M, Gunshor RL. Spectroscopy of CdTe/MnTe single quantum wells: A strained-layer II-VI heterostructure with strong electronic confinement Physical Review B. 41: 9966-9970. DOI: 10.1103/Physrevb.41.9966  0.333
1989 Durbin SM, Han J, Sungki O, Kobayashi M, Menke DR, Gunshor RL, Fu Q, Pelekanos N, Nurmikko AV, Li D, Gonsalves J, Otsuka N. Zinc-blende MnTe: Epilayers and quantum well structures Applied Physics Letters. 55: 2087-2089. DOI: 10.1063/1.102091  0.343
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