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Raghunath Murali, Ph.D. - Publications

Affiliations: 
2004 Georgia Institute of Technology, Atlanta, GA 
Area:
Microelectronics/Microsystems
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Zheng P, Bryan SE, Yang Y, Murali R, Naeemi A, Meindl JD. Hydrogenation of graphene nanoribbon edges: Improvement in carrier transport Ieee Electron Device Letters. 34: 707-709. DOI: 10.1109/Led.2013.2253593  0.633
2012 Bryan SE, Brenner K, Yang Y, Murali R, Meindl JD. P-type electrical transport of chemically doped epitaxial graphene nanoribbons Ieee Electron Device Letters. 33: 866-868. DOI: 10.1109/Led.2012.2189432  0.548
2012 Yang Y, Brenner K, Murali R. The influence of atmosphere on electrical transport in graphene Carbon. 50: 1727-1733. DOI: 10.1016/J.Carbon.2011.12.008  0.364
2012 Brenner K, Yang Y, Murali R. Edge doping of graphene sheets Carbon. 50: 637-645. DOI: 10.1016/J.Carbon.2011.09.021  0.41
2011 Yang Y, Murali R. Binding mechanisms of molecular oxygen and moisture to graphene Applied Physics Letters. 98: 93116. DOI: 10.1063/1.3562317  0.368
2011 Brenner K, Murali R. In situ doping of graphene by exfoliation in a nitrogen ambient Applied Physics Letters. 98. DOI: 10.1063/1.3562018  0.381
2011 Bryan SE, Yang Y, Murali R. Conductance of Epitaxial Graphene Nanoribbons: Influence of Size Effects and Substrate Morphology Journal of Physical Chemistry C. 115: 10230-10235. DOI: 10.1021/Jp200543F  0.395
2010 Yang Y, Murali R. Impact of Size Effect on Graphene Nanoribbon Transport Ieee Electron Device Letters. 31: 237-239. DOI: 10.1109/Led.2009.2039915  0.412
2010 Meindl J, Naeemi A, Bakir M, Murali R. Nanoelectronics in retrospect, prospect and principle Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 53: 31-35. DOI: 10.1109/ISSCC.2010.5434062  0.611
2010 Brenner K, Murali R. Single step, complementary doping of graphene Applied Physics Letters. 96. DOI: 10.1063/1.3308482  0.396
2009 Murali R, Meindl JD. What is graphene? Acm Sigda Newsletter. 39: 1-1. DOI: 10.1145/1862906.1862907  0.563
2009 Murali R, Brenner K, Yang Y, Beck T, Meindl JD. Resistivity of graphene nanoribbon interconnects Ieee Electron Device Letters. 30: 611-613. DOI: 10.1109/Led.2009.2020182  0.537
2009 Murali R, Yang Y, Brenner K, Beck T, Meindl JD. Breakdown current density of graphene nanoribbons Applied Physics Letters. 94. DOI: 10.1063/1.3147183  0.564
2007 Murali R, Brown D, Martin KP, Meindl JD. Improving electron beam resist sensitivity by preexposure to deep ultraviolet radiation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2064-2067. DOI: 10.1116/1.2794070  0.485
2007 Murali R, Meindl JD. Modeling the effect of source/drain junction depth on bulk-MOSFET scaling Solid-State Electronics. 51: 823-827. DOI: 10.1016/J.Sse.2007.03.012  0.524
2006 Murali R, Brown DK, Martin KP, Meindl JD. Process optimization and proximity effect correction for gray scale e-beam lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2936-2939. DOI: 10.1116/1.2357962  0.497
2004 Murali R, Austin BL, Wang L, Meindl JD. Short-channel modeling of bulk accumulation MOSFETs Ieee Transactions On Electron Devices. 51: 940-947. DOI: 10.1109/Ted.2004.828276  0.662
2002 Murali R, Austin BL, Wang L, Meindl JD. Scaled accumulation FETS for ultra-low power logic Proceedings of the Annual Ieee International Asic Conference and Exhibit. 2002: 371-375. DOI: 10.1109/ASIC.2002.1158087  0.631
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