| Year |
Citation |
Score |
| 2020 |
Lee SC, Kang JH, Park Q, Krishna S, Brueck SRJ. Quantum efficiency of plasmonic-coupled quantum dot infrared photodetectors for single- color detection: the upper limit of plasmonic enhancement. Optics Express. 28: 7618-7633. PMID 32225986 DOI: 10.1364/Oe.386844 |
0.512 |
|
| 2020 |
Braga OM, Delfino CA, Kawabata RMS, Pinto LD, Vieira GS, Pires MP, Souza PLd, Marega E, Carlin JA, Krishna S. Surface Passivation of InGaAs/InP p-i-n Photodiodes Using Epitaxial Regrowth of InP Ieee Sensors Journal. 20: 9234-9244. DOI: 10.1109/Jsen.2020.2987006 |
0.369 |
|
| 2020 |
Casias LK, Morath CP, Steenbergen EH, Umana-Membreno GA, Webster PT, Logan JV, Kim JK, Balakrishnan G, Faraone L, Krishna S. Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material Applied Physics Letters. 116: 182109. DOI: 10.1063/1.5144079 |
0.377 |
|
| 2020 |
Taghipour Z, Rogers V, Ringel B, Liu AWK, Fastenau JM, Lubyshev D, Nelson SA, Krishna S. Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si Journal of Luminescence. 228: 117581. DOI: 10.1016/J.Jlumin.2020.117581 |
0.354 |
|
| 2020 |
Rogers V, Deitz JI, Blumer A, Carlin JA, Grassman TJ, Krishna S. InAs1−ySby virtual substrates grown by MOCVD for long wave infrared detectors Journal of Crystal Growth. 535: 125552. DOI: 10.1016/J.Jcrysgro.2020.125552 |
0.36 |
|
| 2019 |
Dev S, Wang Y, Kim K, Zamiri M, Kadlec C, Goldflam M, Hawkins S, Shaner E, Kim J, Krishna S, Allen M, Allen J, Tutuc E, Wasserman D. Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits. Nature Communications. 10: 1625. PMID 30967546 DOI: 10.1038/S41467-019-09602-2 |
0.321 |
|
| 2019 |
Foteinopoulou S, Devarapu GCR, Subramania GS, Krishna S, Wasserman D. Phonon-polaritonics: enabling powerful capabilities for infrared photonics Nanophotonics. 8: 2129-2175. DOI: 10.1515/Nanoph-2019-0232 |
0.355 |
|
| 2019 |
Taghipour Z, Lee S, Myers S, Steenbergen E, Morath C, Cowan V, Mathews S, Balakrishnan G, Krishna S. Temperature-Dependent Minority-Carrier Mobility in
p
-Type
InAs
/
GaSb
Type-II-Superlattice Photodetectors Physical Review Applied. 11. DOI: 10.1103/Physrevapplied.11.024047 |
0.303 |
|
| 2019 |
Han IS, Kim JS, Shin JC, Kim JO, Noh SK, Lee SJ, Krishna S. Photoluminescence study of InAs/InGaAs sub-monolayer quantum dot infrared photodetectors with various numbers of multiple stack layers Journal of Luminescence. 207: 512-519. DOI: 10.1016/J.Jlumin.2018.11.052 |
0.488 |
|
| 2019 |
Casias LK, Morath CP, Steenbergen EH, Webster PT, Kim JK, Cowan VM, Balakrishnan G, Krishna S. Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications Infrared Physics & Technology. 96: 184-191. DOI: 10.1016/J.Infrared.2018.11.024 |
0.425 |
|
| 2018 |
Taghipour Z, Shojaee E, Krishna S. Many-body perturbation theory study of type-II InAs/GaSb superlattices within GW approximation. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 29923836 DOI: 10.1088/1361-648X/Aacdce |
0.331 |
|
| 2018 |
Ameen TA, Ilatikhameneh H, Tankasala A, Hsueh Y, Charles J, Fonseca J, Povolotskyi M, Kim JO, Krishna S, Allen MS, Allen JW, Rahman R, Klimeck G. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot. Beilstein Journal of Nanotechnology. 9: 1075-1084. PMID 29719758 DOI: 10.3762/Bjnano.9.99 |
0.5 |
|
| 2018 |
Gomółka E, Rutkowski J, Martyniuk P, Markowska O, Kopytko M, Kowalewski A, Rogalski A, Motyka M, Krishna S. Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design Bulletin of the Polish Academy of Sciences-Technical Sciences. 317-323. DOI: 10.24425/123438 |
0.34 |
|
| 2018 |
Dahiya V, Deitz JI, Hollingshead DA, Carlin JA, Grassman TJ, Krishna S. Investigation of digital alloyed AlInSb metamorphic buffers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 02D111. DOI: 10.1116/1.5018260 |
0.32 |
|
| 2018 |
Lee J, Fredricksen CJ, Flitsiyan E, Peale RE, Chernyak L, Taghipour Z, Casias L, Kazemi A, Krishna S, Myers S. Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices Journal of Applied Physics. 123: 235104. DOI: 10.1063/1.5030444 |
0.369 |
|
| 2018 |
Dahiya V, Zamiri M, So MG, Hollingshead DA, Kim J, Krishna S. Fabrication of InAs quantum ring nanostructures on GaSb by droplet epitaxy Journal of Crystal Growth. 492: 71-76. DOI: 10.1016/J.Jcrysgro.2018.04.016 |
0.393 |
|
| 2018 |
Kazemi A, Myers S, Taghipour Z, Mathews S, Schuler-Sandy T, Lee S, Cowan VM, Garduno E, Steenbergen E, Morath C, Ariyawansa G, Scheihing J, Krishna S. Mid-wavelength infrared unipolar nBp superlattice photodetector Infrared Physics & Technology. 88: 114-118. DOI: 10.1016/J.Infrared.2017.11.008 |
0.456 |
|
| 2018 |
Yoon S, Lee SH, Shin JC, Kim JS, Lee SJ, Leem J, Krishna S. Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell Current Applied Physics. 18: 667-672. DOI: 10.1016/J.Cap.2018.03.020 |
0.47 |
|
| 2017 |
Montoya JA, Tian ZB, Krishna S, Padilla WJ. Ultra-thin infrared metamaterial detector for multicolor imaging applications. Optics Express. 25: 23343-23355. PMID 29041635 DOI: 10.1364/Oe.25.023343 |
0.411 |
|
| 2017 |
Godoy SE, Hayat MM, Ramirez DA, Myers SA, Padilla RS, Krishna S. Detection theory for accurate and non-invasive skin cancer diagnosis using dynamic thermal imaging. Biomedical Optics Express. 8: 2301-2323. PMID 28736673 DOI: 10.1364/Boe.8.002301 |
0.546 |
|
| 2017 |
Krishna S. = 4 supersymmetric quantum mechanical model: Novel symmetries International Journal of Modern Physics A. 32: 1750055. DOI: 10.1142/S0217751X17500555 |
0.344 |
|
| 2017 |
Kazemi A, Myers S, Taghipour Z, Mathews S, Schuler-Sandy T, Lee SH, Cowan VM, Garduno E, Steenbergen E, Morath C, Ariyawansa G, Scheihing J, Krishna S. High quantum efficiency mid-wavelength infrared superlattice photodetector Proceedings of Spie. 10177. DOI: 10.1117/12.2263879 |
0.56 |
|
| 2017 |
Mathews S, Schuler-Sandy T, Kim JS, Kadlec C, Kazemi A, Dahiya V, Ramirez DA, Myers SA, Kuznetsova YV, Krishna S. In situ flashes of gallium technique for oxide-free epiready GaSb (100) surface Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 02B114. DOI: 10.1116/1.4978604 |
0.591 |
|
| 2017 |
Wolde S, Lao Y, Unil Perera AG, Zhang YH, Wang TM, Kim JO, Schuler-Sandy T, Tian Z, Krishna S. Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors Journal of Applied Physics. 121: 244501. DOI: 10.1063/1.4989834 |
0.478 |
|
| 2017 |
Garwood T, Modine NA, Krishna S. Electronic structure modeling of InAs/GaSb superlattices with hybrid density functional theory Infrared Physics & Technology. 81: 27-31. DOI: 10.1016/J.Infrared.2016.12.007 |
0.303 |
|
| 2016 |
Zamiri M, Anwar F, Klein BA, Rasoulof A, Dawson NM, Schuler-Sandy T, Deneke CF, Ferreira SO, Cavallo F, Krishna S. Antimonide-based membranes synthesis integration and strain engineering. Proceedings of the National Academy of Sciences of the United States of America. PMID 27986953 DOI: 10.1073/Pnas.1615645114 |
0.644 |
|
| 2016 |
Tan CH, Sandall IC, Zhou X, Krishna S. InAs-QDIP hybrid broadband infrared photodetector Mrs Advances. 1: 3301-3306. DOI: 10.1557/Adv.2016.457 |
0.493 |
|
| 2016 |
Krishna S. Antimonid Based Mid-Infrared Detectors and Focal Plane Arrays Frontiers in Optics. DOI: 10.1364/Fio.2016.Ftu5D.4 |
0.375 |
|
| 2016 |
Ramirez DA, Myers SA, Kuznetsova Y, Mathews S, Schuler-Sandy T, Steenbergen EH, Morath CP, Cowan VM, Krishna S. Comparison of MWIR unipolar barrier structures based on strained layer superlattices (Conference Presentation) Proceedings of Spie. 9974. DOI: 10.1117/12.2239723 |
0.625 |
|
| 2016 |
Krishna S. Multi-spectral black meta-infrared detectors (Conference Presentation) Proceedings of Spie. 9920: 992002. DOI: 10.1117/12.2235101 |
0.427 |
|
| 2016 |
Plis E, Myers SA, Ramirez DA, Krishna S. Development of dual-band barrier detectors Proceedings of Spie - the International Society For Optical Engineering. 9819. DOI: 10.1117/12.2228166 |
0.66 |
|
| 2016 |
Tian Z, Singh A, Rigg K, Krishna S. Mid-infrared interband cascade photodetectors with high quantum efficiency Proceedings of Spie. 9755: 975512. DOI: 10.1117/12.2208217 |
0.452 |
|
| 2016 |
Fiorante GRC, Ghasemi J, Zarkesh-Ha P, Krishna S. Spatio-Temporal Bias-Tunable Readout Circuit for On-Chip Intelligent Image Processing Ieee Transactions On Circuits and Systems I: Regular Papers. 63: 1825-1832. DOI: 10.1109/Tcsi.2016.2593991 |
0.309 |
|
| 2016 |
Zamiri M, Klein B, Schuler-Sandy T, Myers S, Dahiya V, Cavallo F, Krishna S. Indium-bump-free antimonide superlattice membrane detectors on silicon substrates Applied Physics Letters. 108. DOI: 10.1063/1.4943248 |
0.668 |
|
| 2016 |
Das S, Das U, Gautam N, Krishna S. Type-II InAs/GaSb photodiode array pixel isolation by femto-second laser anneal Infrared Physics and Technology. 78: 162-166. DOI: 10.1016/J.Infrared.2016.07.023 |
0.619 |
|
| 2015 |
Kazemi A, He X, Alaie S, Ghasemi J, Dawson NM, Cavallo F, Habteyes TG, Brueck SR, Krishna S. Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography. Scientific Reports. 5: 11463. PMID 26126936 DOI: 10.1038/Srep11463 |
0.38 |
|
| 2015 |
Kim HS, Myers S, Klein B, Kazemi A, Krishna S, Kim JO, Lee SJ. Dark current improvement of the type-II InAs / GaSb superlattice photodetectors by using a gate bias control Journal of the Korean Physical Society. 66: 535-538. DOI: 10.3938/Jkps.66.535 |
0.747 |
|
| 2015 |
Krishna S. Infrared detectors based on InAs/GaSb superlattice materials (Presentation Recording) Proceedings of Spie. 9555. DOI: 10.1117/12.2190280 |
0.316 |
|
| 2015 |
Padilla W, Watts CM, Nadell C, Montoya JA, Krishna S. Metamaterial-based single pixel imaging system (Presentation Recording) Proceedings of Spie. 9544. DOI: 10.1117/12.2189836 |
0.311 |
|
| 2015 |
Malone MC, Morath CP, Fahey S, Klein B, Cowan VM, Krishna S. Progress towards vertical transport study of proton-irradiated InAs/GaSb type-II strained-layer superlattice materials for space-based infrared detectors using magnetoresistance measurements Proceedings of Spie - the International Society For Optical Engineering. 9616. DOI: 10.1117/12.2188405 |
0.667 |
|
| 2015 |
Ramirez DA, Myers SA, Plis E, Kuznetsova Y, Morath CP, Cowan VM, Krishna S. MWIR unipolar barrier photodetectors based on strained layer superlattices Proceedings of Spie - the International Society For Optical Engineering. 9616. DOI: 10.1117/12.2188332 |
0.662 |
|
| 2015 |
Das S, Das U, Gautam N, Krishna S. Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing Proceedings of Spie - the International Society For Optical Engineering. 9516. DOI: 10.1117/12.2178995 |
0.61 |
|
| 2015 |
Rotter TJ, Busani T, Rathi P, Jaeckel F, Reyes PA, Malloy KJ, Ukhanov AA, Plis E, Krishna S, Jaime-Vasquez M, Baril NF, Benson JD, Tenne DA. Confocal Raman spectroscopy and AFM for evaluation of sidewalls in type II superlattice FPAs Proceedings of Spie - the International Society For Optical Engineering. 9451. DOI: 10.1117/12.2178162 |
0.36 |
|
| 2015 |
Ramirez DA, Plis EA, Myers SA, Morath CP, Cowan VM, Krishna S. High-operating temperature MWIR unipolar barrier photodetectors based on strained layer superlattices Proceedings of Spie - the International Society For Optical Engineering. 9451. DOI: 10.1117/12.2176908 |
0.677 |
|
| 2015 |
Tian ZB, Krishna S. Progress on the development of interband cascade photodetectors Proceedings of Spie - the International Society For Optical Engineering. 9451. DOI: 10.1117/12.2176798 |
0.411 |
|
| 2015 |
Kazemi A, Nami M, Kim JO, Allen MS, Allen JW, Wenner BR, Brown DP, Urbas A, Feezell D, Mitchell B, Krishna S. Investigation of plasmonic enhancement in a quantum dot-in-a-well structure Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2076227 |
0.458 |
|
| 2015 |
Hobbs MJ, Tan CH, Zhou X, David JPR, Willmott JR, Plis E, Krishna S. InAs/GaSb type-II superlattice for radiation thermometry Ieee Transactions On Instrumentation and Measurement. 64: 502-508. DOI: 10.1109/Tim.2014.2341411 |
0.327 |
|
| 2015 |
Tian ZB, Krishna S. Mid-infrared interband cascade photodetectors with different absorber designs Ieee Journal of Quantum Electronics. 51. DOI: 10.1109/Jqe.2015.2398735 |
0.432 |
|
| 2015 |
Wróbel J, Ciura L, Motyka M, Szmulowicz F, Kolek A, Kowalewski A, Moszczyński P, Dyksik M, Madejczyk P, Krishna S, Rogalski A. Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/11/115004 |
0.366 |
|
| 2015 |
Craig AP, Thompson MD, Tian ZB, Krishna S, Krier A, Marshall ARJ. InAsSb-based nBn photodetectors: Lattice mismatched growth on GaAs and low-frequency noise performance Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105011 |
0.409 |
|
| 2015 |
Tian ZB, Krishna S. Mid-infrared metamorphic interband cascade photodetectors on GaAs substrates Applied Physics Letters. 107. DOI: 10.1063/1.4936650 |
0.417 |
|
| 2015 |
Gopal V, Gautam N, Plis E, Krishna S. Modelling of current-voltage characteristics of infrared photo-detectors based on type - II InAs/GaSb super-lattice diodes with unipolar blocking layers Aip Advances. 5. DOI: 10.1063/1.4930978 |
0.618 |
|
| 2015 |
Plis EA, Schuler-Sandy T, Ramirez DA, Myers S, Krishna S. Dark current reduction in InAs/InAsSb superlattice mid-wave infrared detectors through restoration etch Electronics Letters. 51: 2009-2010. DOI: 10.1049/El.2015.2073 |
0.628 |
|
| 2015 |
Donchev V, Ivanov T, Ivanova T, Mathews S, Kim JO, Krishna S. Surface photovoltage spectroscopy study of InAs quantum dot in quantum well multilayer structures for infrared photodetectors Superlattices and Microstructures. 88: 711-722. DOI: 10.1016/J.Spmi.2015.10.036 |
0.502 |
|
| 2015 |
Schuler-Sandy T, Klein B, Casias L, Mathews S, Kadlec C, Tian Z, Plis E, Myers S, Krishna S. Growth of InAs-InAsSb SLS through the use of digital alloys Journal of Crystal Growth. 425: 29-32. DOI: 10.1016/J.Jcrysgro.2015.02.096 |
0.665 |
|
| 2015 |
Tian ZB, Schuler-Sandy T, Krishna S, Tang D, Smith DJ. Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.062 |
0.352 |
|
| 2015 |
Craig AP, Marshall ARJ, Tian ZB, Krishna S. Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb" Infrared Physics and Technology. 70: 107-110. DOI: 10.1016/J.Infrared.2015.05.006 |
0.462 |
|
| 2015 |
Klein B, Hains C, Taghipour Z, Plis E, Krishna S. Photocapacitance study of GaSb: In, As for defect analysis in InAs/GaSb type-II strained layer superlattices Infrared Physics and Technology. 70: 40-43. DOI: 10.1016/J.Infrared.2014.11.009 |
0.627 |
|
| 2015 |
Tian ZB, Schuler-Sandy T, Krishna S. Dark current in antimony-based mid-infrared interband cascade infrared photodetectors Infrared Physics and Technology. 70: 44-47. DOI: 10.1016/J.Infrared.2014.11.007 |
0.433 |
|
| 2015 |
Unil Perera AG, Lao YF, Wolde S, Zhang YH, Wang TM, Kim JO, Schuler-Sandy T, Tian ZB, Krishna SS. InAs/GaAs quantum dot and dots-in-well infrared photodetectors based on p-type valence-band intersublevel transitions Infrared Physics and Technology. 70: 15-19. DOI: 10.1016/J.Infrared.2014.10.016 |
0.415 |
|
| 2015 |
Klein B, Artyushkova K, Plis E, Jamus A, Maji S, Casias L, Kutty MN, Krishna S. Post-etching mesa surface composition investigation of InAs/GaSb type-II strained layer superlattices using XPS characterization Infrared Physics and Technology. 70: 66-69. DOI: 10.1016/J.Infrared.2014.10.010 |
0.623 |
|
| 2015 |
Treider LA, Morath CP, Cowan VM, Tian ZB, Krishna S. Radiometric characterization of an LWIR, type-II strained layer superlattice pBiBn photodetector Infrared Physics and Technology. 70: 70-75. DOI: 10.1016/J.Infrared.2014.09.043 |
0.471 |
|
| 2015 |
Plis E, Myers S, Ramirez D, Smith EP, Rhiger D, Chen C, Phillips JD, Krishna S. Dual color longwave InAs/GaSb type-II strained layer superlattice detectors Infrared Physics and Technology. 70: 93-98. DOI: 10.1016/J.Infrared.2014.09.027 |
0.75 |
|
| 2015 |
Godoy SE, Ramirez DA, Myers SA, Von Winckel G, Krishna S, Berwick M, Padilla RS, Sen P. Dynamic infrared imaging for skin cancer screening Infrared Physics and Technology. 70: 147-152. DOI: 10.1016/J.Infrared.2014.09.017 |
0.557 |
|
| 2014 |
Ma J, Chiles J, Sharma YD, Krishna S, Fathpour S. Two-photon photovoltaic effect in gallium arsenide. Optics Letters. 39: 5297-300. PMID 26466255 DOI: 10.1364/Ol.39.005297 |
0.631 |
|
| 2014 |
Santiago F, Bagwell B, Martinez T, Restaino S, Krishna S. Large aperture adaptive doublet polymer lens for imaging applications. Journal of the Optical Society of America. a, Optics, Image Science, and Vision. 31: 1842-6. PMID 25121541 DOI: 10.1364/Josaa.31.001842 |
0.557 |
|
| 2014 |
Shenoi RV, Lin SY, Krishna S, Huang D. Order-of-magnitude enhancement of intersubband photoresponse in a plasmonic quantum dot system. Optics Letters. 39: 4454-7. PMID 25078201 DOI: 10.1364/Ol.39.004454 |
0.809 |
|
| 2014 |
Paskaleva BS, Godoy SE, Jang WY, Bender SC, Krishna S, Hayat MM. Model-based edge detector for spectral imagery using sparse spatiospectral masks. Ieee Transactions On Image Processing : a Publication of the Ieee Signal Processing Society. 23: 2315-27. PMID 24710830 DOI: 10.1109/Tip.2014.2315154 |
0.703 |
|
| 2014 |
Kim JO, Ku Z, Kazemi A, Urbas A, Kang SW, Noh SK, Lee SJ, Krishna S. Effect of barrier on the performance of submonolayer quantum dot infrared photodetectors Optical Materials Express. 4: 198-204. DOI: 10.1364/Ome.4.000198 |
0.474 |
|
| 2014 |
Ramirez DA, Plis EA, Myers S, Treider LA, Garduno E, Morath CP, Cowan VM, Krishna S. High operating temperature midwave infrared (MWIR) photodetectors based on type II InAs/GaSb strained layer superlattice Proceedings of Spie - the International Society For Optical Engineering. 9226. DOI: 10.1117/12.2064045 |
0.684 |
|
| 2014 |
Kazemi A, He X, Ghasemi J, Alaie SH, Dawson NM, Klein B, Kiesow K, Wozniak D, Habteyes T, Brueck SRJ, Krishna S. Graphene nano-objects tailored by interference lithography Proceedings of Spie - the International Society For Optical Engineering. 9168. DOI: 10.1117/12.2060003 |
0.6 |
|
| 2014 |
Watts CM, Shrekenhamer D, Montoya J, Lipworth G, Hunt J, Sleasman T, Krishna S, Smith DR, Padilla WJ. Coded and compressive THz imaging with metamaterials Proceedings of Spie - the International Society For Optical Engineering. 8985. DOI: 10.1117/12.2058082 |
0.324 |
|
| 2014 |
Zamiri M, Plis E, Kim JO, Lee SC, Neumann A, Myers S, Smith EP, Itsuno AM, Wehner JGA, Johnson SM, Brueck SRJ, Krishna S. MWIR superlattice detectors integrated with substrate side-illuminated plasmonic coupler Proceedings of Spie - the International Society For Optical Engineering. 9070. DOI: 10.1117/12.2050785 |
0.447 |
|
| 2014 |
Plis E, Kutty MN, Myers S, Krishna S, Chen C, Phillips JD. Passivation of long-wave infrared InAs/GaSb superlattice detectors with epitaxially grown ZnTe Proceedings of Spie - the International Society For Optical Engineering. 9070. DOI: 10.1117/12.2050490 |
0.603 |
|
| 2014 |
Tian ZB, Godoy SE, Kim HS, Schuler-Sandy T, Montoya J, Krishna S. Mid-wave infrared interband cascade photodetectors and focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 9070. DOI: 10.1117/12.2049988 |
0.596 |
|
| 2014 |
Acosta L, Klein B, Tian ZB, Frantz E, Myers S, Gautam N, Schuler-Sandy T, Plis E, Krishna S. Investigation of quantum efficiency in mid-wave infrared (MWIR) InAs/GaSb type-II strained layer superlattice (T2SL) detectors Proceedings of Spie - the International Society For Optical Engineering. 8996. DOI: 10.1117/12.2039797 |
0.73 |
|
| 2014 |
Pusz W, Kowalewski A, Martyniuk P, Gawron W, Plis E, Krishna S, Rogalski A. Mid-wavelength infrared type-II InAs/GaSb superlattice interband cascade photodetectors Optical Engineering. 53. DOI: 10.1117/1.Oe.53.4.043107 |
0.425 |
|
| 2014 |
Santiago F, Bagwell BE, Pinon V, Krishna S. Adaptive polymer lens for rapid zoom shortwave infrared imaging applications Optical Engineering. 53: 125101. DOI: 10.1117/1.Oe.53.12.125101 |
0.575 |
|
| 2014 |
Klein B, Gautam N, Plis E, Schuler-Sandy T, Rotter TJ, Krishna S, Connelly BC, Metcalfe GD, Shen P, Wraback M. Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4862085 |
0.745 |
|
| 2014 |
Wolde S, Lao YF, Unil Perera AG, Zhang YH, Wang TM, Kim JO, Schuler-Sandy T, Tian ZB, Krishna S. High temperature terahertz response in a p -type quantum dot-in-well photodetector Applied Physics Letters. 105. DOI: 10.1063/1.4898088 |
0.402 |
|
| 2014 |
Tian ZB, Godoy SE, Kim HS, Schuler-Sandy T, Montoya JA, Krishna S. High operating temperature interband cascade focal plane arrays Applied Physics Letters. 105. DOI: 10.1063/1.4892634 |
0.584 |
|
| 2014 |
Lao YF, Wolde S, Unil Perera AG, Zhang YH, Wang TM, Kim JO, Schuler-Sandy T, Tian ZB, Krishna SS. Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors Applied Physics Letters. 104. DOI: 10.1063/1.4875239 |
0.42 |
|
| 2014 |
Oh Kim J, Ku Z, Krishna S, Kang SW, Lee SJ, Chul Jun Y, Urbas A. Simulation and analysis of grating-integrated quantum dot infrared detectors for spectral response control and performance enhancement Journal of Applied Physics. 115. DOI: 10.1063/1.4871855 |
0.512 |
|
| 2014 |
Tian ZB, Plis EA, Hinkey RT, Krishna S. Influence of composition in InAs/GaSb type-II superlattices on their optical properties Electronics Letters. 50: 1733-1734. DOI: 10.1049/El.2014.3129 |
0.321 |
|
| 2014 |
Watts CM, Shrekenhamer D, Montoya J, Lipworth G, Hunt J, Sleasman T, Krishna S, Smith DR, Padilla WJ. Terahertz compressive imaging with metamaterial spatial light modulators Nature Photonics. 8: 605-609. DOI: 10.1038/Nphoton.2014.139 |
0.312 |
|
| 2014 |
Sharma YD, Jun YC, Kim JO, Brener I, Krishna S. Polarization-dependent photocurrent enhancement in metamaterial-coupled quantum dots-in-a-well infrared detectors Optics Communications. 312: 31-34. DOI: 10.1016/J.Optcom.2013.09.010 |
0.49 |
|
| 2013 |
Fang H, Bechtel HA, Plis E, Martin MC, Krishna S, Yablonovitch E, Javey A. Quantum of optical absorption in two-dimensional semiconductors. Proceedings of the National Academy of Sciences of the United States of America. 110: 11688-91. PMID 23818622 DOI: 10.1073/Pnas.1309563110 |
0.455 |
|
| 2013 |
Ku Z, Jang WY, Zhou J, Kim JO, Barve AV, Silva S, Krishna S, Brueck SR, Nelson R, Urbas A, Kang S, Lee SJ. Analysis of subwavelength metal hole array structure for the enhancement of back-illuminated quantum dot infrared photodetectors. Optics Express. 21: 4709-16. PMID 23482003 DOI: 10.1364/Oe.21.004709 |
0.829 |
|
| 2013 |
Pusz W, Kowalewski A, Gawron W, Plis E, Krishna S, Rogalski A. MWIR type-II InAs/GaSb superlattice interband cascade photodetectors Proceedings of Spie - the International Society For Optical Engineering. 8868. DOI: 10.1117/12.2035499 |
0.301 |
|
| 2013 |
Tian ZB, DeCuir EA, Gautam N, Krishna S, Wijewarnasuriya PS, Pattison JW, Dhar N, Welser RE, Sood AK. Hetero-engineering infrared detectors with type-II superlattices Proceedings of Spie - the International Society For Optical Engineering. 8868. DOI: 10.1117/12.2032205 |
0.652 |
|
| 2013 |
Hobbs MJ, Bastiman F, Tan CH, David JPR, Krishna S, Plis E. Uncooled MWIR InAs/GaSb type-II superlattice grown on a GaAs substrate Proceedings of Spie - the International Society For Optical Engineering. 8899. DOI: 10.1117/12.2031949 |
0.332 |
|
| 2013 |
Treider LA, Cowan VM, Morath CP, Tian Z, Krishna S. Noise spectrum measurements of a midwave, interband cascade infrared photodetector with 33 nm wide electron barrier Proceedings of Spie - the International Society For Optical Engineering. 8876. DOI: 10.1117/12.2026817 |
0.377 |
|
| 2013 |
Tian ZB, Schuler-Sandy T, Godoy SE, Kim HS, Krishna S. High-operating-temperature MWIR detectors using type II superlattices Proceedings of Spie - the International Society For Optical Engineering. 8867. DOI: 10.1117/12.2024587 |
0.571 |
|
| 2013 |
Cowan VM, Treider LA, Morath CP, Tian Z, Gautum N, Krishna S. Radiation tolerance of type-II strained layer superlattice-based interband cascade infrared photodetectors (ICIP) Proceedings of Spie - the International Society For Optical Engineering. 8876. DOI: 10.1117/12.2022529 |
0.462 |
|
| 2013 |
Montoya J, Stephen AM, Barve A, Kim JO, Krishna S, David WP, Charles MR, Wendt J. Broadband enhancement of infrared photodetectors with metamaterial resonators Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2018198 |
0.67 |
|
| 2013 |
Tian ZB, Schuler-Sandy T, Godoy SE, Kim HS, Montoya J, Myers S, Klein B, Plis E, Krishna S. Quantum-engineered mid-infrared type-II InAs/GaSb superlattice photodetectors for high temperature operations Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2016125 |
0.754 |
|
| 2013 |
Tian Z, Eric AD, Priyalal SW, James WP, Gautam N, Krishna S, Dhar N, Roger EW, Ashok KS. Low dark current structures for long-wavelength Type-II strained layer superlattice photodiodes Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2015489 |
0.697 |
|
| 2013 |
Shrekenhamer D, Watts CM, Montoy J, Krishna S, Padilla WJ. Metamaterial-based imaging for potential security applications Proceedings of Spie - the International Society For Optical Engineering. 8632. DOI: 10.1117/12.2013145 |
0.337 |
|
| 2013 |
Martyniuk P, Wróbel J, Plis E, Madejczyk P, Gawron W, Kowalewski A, Krishna S, Rogalski A. Modeling of midwavelength infrared InAs/GaSb type II superlattice detectors Optical Engineering. 52. DOI: 10.1117/1.Oe.52.6.061307 |
0.435 |
|
| 2013 |
Plis E, Klein B, Myers S, Gautam N, Rotter TJ, Dawson RL, Krishna S, Lee SJ, Kim YH. Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4798650 |
0.774 |
|
| 2013 |
Umana-Membreno GA, Klein B, Smith EPG, Antoszewski J, Plis E, Johnson SM, Krishna S, Rhiger DR, Faraone L. Electron transport in InAsSb-based nBn photodetector structures Ieee Transactions On Electron Devices. 60: 510-512. DOI: 10.1109/Ted.2012.2228658 |
0.588 |
|
| 2013 |
Plis E, Klein B, Myers S, Gautam N, Smith EP, Krishna S. High operating temperature midwave infrared InAs/GaSb superlattice photodetectors on (111) GaSb substrates Ieee Electron Device Letters. 34: 426-428. DOI: 10.1109/Led.2012.2236534 |
0.769 |
|
| 2013 |
Gautam N, Myers S, Barve AV, Klein B, Smith EP, Rhiger DR, Kim HS, Tian ZB, Krishna S. Barrier engineered infrared photodetectors based on type-ii inas/gasb strained layer superlattices Ieee Journal of Quantum Electronics. 49: 211-217. DOI: 10.1109/Jqe.2012.2236643 |
0.832 |
|
| 2013 |
Lao YF, Wolde S, Perera AGU, Zhang YH, Wang TM, Liu HC, Kim JO, Schuler-Sandy T, Tian ZB, Krishna SS. InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency Applied Physics Letters. 103. DOI: 10.1063/1.4846555 |
0.405 |
|
| 2013 |
Craig AP, Marshall ARJ, Tian ZB, Krishna S, Krier A. Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays Applied Physics Letters. 103. DOI: 10.1063/1.4844615 |
0.418 |
|
| 2013 |
Lao YF, Pitigala PKDDP, Unil Perera AG, Plis E, Krishna SS, Wijewarnasuriya PS. Band offsets and carrier dynamics of type-II InAs/GaSb superlattice photodetectors studied by internal photoemission spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4827881 |
0.305 |
|
| 2013 |
Tian ZB, Schuler-Sandy T, Krishna S. Electron barrier study of mid-wave infrared interband cascade photodetectors Applied Physics Letters. 103. DOI: 10.1063/1.4818903 |
0.326 |
|
| 2013 |
Takei K, Kapadia R, Fang H, Plis E, Krishna S, Javey A. High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics Applied Physics Letters. 102. DOI: 10.1063/1.4802779 |
0.377 |
|
| 2013 |
Feezell D, Sharma Y, Krishna S. Optical properties of nonpolar III-nitrides for intersubband photodetectors Journal of Applied Physics. 113. DOI: 10.1063/1.4798353 |
0.46 |
|
| 2013 |
Kim JO, Sengupta S, Barve AV, Sharma YD, Adhikary S, Lee SJ, Noh SK, Allen MS, Allen JW, Chakrabarti S, Krishna S. Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors Applied Physics Letters. 102. DOI: 10.1063/1.4774383 |
0.765 |
|
| 2013 |
Takei K, Kapadia R, Li Y, Plis E, Krishna S, Javey A. Surface charge transfer doping of III-V nanostructures Journal of Physical Chemistry C. 117: 17845-17849. DOI: 10.1021/Jp406174R |
0.346 |
|
| 2013 |
Agarwal A, Srujan M, Chakrabarti S, Krishna S. Investigation of thermal interdiffusion in InAs/In0.15Ga 0.85As/GaAs quantum dot-in-a-well heterostructures Journal of Luminescence. 143: 96-100. DOI: 10.1016/J.Jlumin.2013.04.030 |
0.489 |
|
| 2013 |
Gautam N, Myers S, Barve AV, Klein B, Smith EP, Rhiger D, Plis E, Kutty MN, Henry N, Schuler-Sandy T, Krishna S. Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices Infrared Physics and Technology. 59: 72-77. DOI: 10.1016/J.Infrared.2012.12.017 |
0.828 |
|
| 2013 |
Plis E, Naydenkov M, Myers S, Klein B, Gautam N, Krishna SS, Smith EP, Johnson S, Krishna S. Dual-band pBp detectors based on InAs/GaSb strained layer superlattices Infrared Physics and Technology. 59: 28-31. DOI: 10.1016/J.Infrared.2012.12.005 |
0.762 |
|
| 2013 |
Asplund C, Marcks Von Würtemberg R, Lantz D, Malm H, Martijn H, Plis E, Gautam N, Krishna S. Performance of mid-wave T2SL detectors with heterojunction barriers Infrared Physics and Technology. 59: 22-27. DOI: 10.1016/J.Infrared.2012.12.004 |
0.68 |
|
| 2013 |
Klein B, Montoya J, Gautam N, Krishna S. Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal Applied Physics a: Materials Science and Processing. 111: 671-674. DOI: 10.1007/S00339-012-7293-8 |
0.706 |
|
| 2013 |
Barve AV, Krishna S. Photovoltaic operation of quantum dot quantum cascade detector with low photoconductive gain for midwave infrared photodetection Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 756-760. DOI: 10.1002/Pssc.201200675 |
0.769 |
|
| 2013 |
Gautam N, Barve AV, Krishna S. Polarization dependent photocurrent spectroscopy for identification of quantum confined interband transitions in type-II InAs/GaSb superlattices Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 736-739. DOI: 10.1002/Pssc.201200654 |
0.784 |
|
| 2013 |
Plis E, Klein B, Myers S, Gautam N, Krishna S. (111) InAs/GaSb type-II strained layer superlattice material for high operating temperature detection Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 748-751. DOI: 10.1002/Pssc.201200605 |
0.784 |
|
| 2013 |
Plis EA, Kutty MN, Krishna S. Passivation techniques for InAs/GaSb strained layer superlattice detectors Laser and Photonics Reviews. 7: 45-59. DOI: 10.1002/Lpor.201100029 |
0.433 |
|
| 2012 |
Jang WY, Hayat MM, Zarkesh-Ha P, Krishna S. Continuous time-varying biasing approach for spectrally tunable infrared detectors. Optics Express. 20: 29823-37. PMID 23388809 DOI: 10.1364/Oe.20.029823 |
0.727 |
|
| 2012 |
Wang C, Chien JC, Fang H, Takei K, Nah J, Plis E, Krishna S, Niknejad AM, Javey A. Self-aligned, extremely high frequency III-V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates. Nano Letters. 12: 4140-5. PMID 22746202 DOI: 10.1021/Nl301699K |
0.337 |
|
| 2012 |
Nah J, Fang H, Wang C, Takei K, Lee MH, Plis E, Krishna S, Javey A. III-V complementary metal-oxide-semiconductor electronics on silicon substrates. Nano Letters. 12: 3592-5. PMID 22694195 DOI: 10.1021/Nl301254Z |
0.376 |
|
| 2012 |
Takei K, Madsen M, Fang H, Kapadia R, Chuang S, Kim HS, Liu CH, Plis E, Nah J, Krishna S, Chueh YL, Guo J, Javey A. Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors. Nano Letters. 12: 2060-6. PMID 22409386 DOI: 10.1021/Nl300228B |
0.563 |
|
| 2012 |
DeCuir EA, Gautam N, Meissner GP, Wijewarnasuriya PS, Krishna S, Dhar NK, Bramhall TG, Welser RE, Sood AK. Design and development of low dark current SLS detectors for IRFPA applications Proceedings of Spie - the International Society For Optical Engineering. 8512. DOI: 10.1117/12.974237 |
0.683 |
|
| 2012 |
Wróbel J, Martyniuk P, Plis E, Madejczyk P, Gawron W, Krishna S, Rogalski A. Dark current modeling of MWIR type-II superlattice detectors Proceedings of Spie. 8353: 835316. DOI: 10.1117/12.925074 |
0.394 |
|
| 2012 |
Cowan VM, Morath CP, Myers S, Plis E, Krishna S. Radiation tolerance of a dual-band IR detector based on a pBp architecture Proceedings of Spie. 8353. DOI: 10.1117/12.925064 |
0.396 |
|
| 2012 |
Umana-Membreno GA, Kala H, Klein B, Antoszewski J, Gautam N, Kutty MN, Plis E, Krishna S, Faraone L. Electronic transport in InAs/GaSb type-II superlattices for long wavelength infrared focal plane array applications Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919767 |
0.732 |
|
| 2012 |
Myers S, Klein B, Plis E, Gautam N, Morath C, Cowan V, Krishna S. Photoconductive gain in barrier heterostructure infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919648 |
0.781 |
|
| 2012 |
Klein B, Gautam N, Myers S, Krishna S. Temperature-dependent absorption derivative on InAs/GaSb Type II superlattices Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919616 |
0.76 |
|
| 2012 |
Kim JO, Sengupta S, Sharma Y, Barve AV, Lee SJ, Noh SK, Krishna S. Sub-monolayer InAs/InGaAs quantum dot infrared photodetectors (SML-QDIP) Proceedings of Spie. 8353: 835336. DOI: 10.1117/12.919458 |
0.775 |
|
| 2012 |
Malm H, Würtemberg RMv, Asplund C, Martijn H, Karim A, Gustafsson O, Plis E, Krishna S. Recent developments in type-II superlattice detectors at IRnova AB Proceedings of Spie. 8353. DOI: 10.1117/12.918992 |
0.519 |
|
| 2012 |
Krishna S. Barrier engineering in quantum dots in a well detector Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.909924 |
0.54 |
|
| 2012 |
DeCuir EA, Meissner GP, Wijewarnasuriya PS, Gautam N, Krishna S, Dhar NK, Welser RE, Sood AK. Long-wave type-II superlattice detectors with unipolar electron and hole barriers Optical Engineering. 51. DOI: 10.1117/1.Oe.51.12.124001 |
0.665 |
|
| 2012 |
Fang H, Chuang S, Takei K, Kim HS, Plis E, Liu CH, Krishna S, Chueh YL, Javey A. Ultrathin-body high-mobility InAsSb-on-insulator field-effect transistors Ieee Electron Device Letters. 33: 504-506. DOI: 10.1109/Led.2012.2185477 |
0.559 |
|
| 2012 |
Barve AV, Sengupta S, Kim JO, Montoya J, Klein B, Shirazi MA, Zamiri M, Sharma YD, Adhikary S, Godoy SE, Jang WY, Fiorante GRC, Chakrabarti S, Krishna S. Barrier selection rules for quantum dots-in-a-well infrared photodetector Ieee Journal of Quantum Electronics. 48: 1243-1251. DOI: 10.1109/Jqe.2012.2208621 |
0.849 |
|
| 2012 |
Godoy SE, Hayat MM, Jang WY, Krishna S. Classifier-enhanced algorithm for compressive spatio-spectral edge detection 2012 Ieee Photonics Conference, Ipc 2012. 587-588. DOI: 10.1109/IPCon.2012.6358757 |
0.661 |
|
| 2012 |
Sharma YD, Jun YC, Kim JO, Brener I, Krishna S. Polarization-dependent photocurrent enhancement in metamaterial-integrated quantum dot infrared detectors 2012 Ieee Photonics Conference, Ipc 2012. 171-172. DOI: 10.1109/IPCon.2012.6358545 |
0.414 |
|
| 2012 |
Martyniuk P, Wróbel J, Plis E, Madejczyk P, Kowalewski A, Gawron W, Krishna S, Rogalski A. Performance modeling of MWIR InAs/GaSb/B–Al0.2Ga0.8Sb type-II superlattice nBn detector Semiconductor Science and Technology. 27: 055002. DOI: 10.1088/0268-1242/27/5/055002 |
0.41 |
|
| 2012 |
Umana-Membreno GA, Klein B, Kala H, Antoszewski J, Gautam N, Kutty MN, Plis E, Krishna S, Faraone L. Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices Applied Physics Letters. 101. DOI: 10.1063/1.4772954 |
0.737 |
|
| 2012 |
Cowan VM, Morath CP, Hubbs JE, Myers S, Plis E, Krishna S. Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons Applied Physics Letters. 101. DOI: 10.1063/1.4772543 |
0.427 |
|
| 2012 |
Gautam N, Barve A, Krishna S. Identification of quantum confined interband transitions in type-II InAs/GaSb superlattices using polarization sensitive photocurrent spectroscopy Applied Physics Letters. 101. DOI: 10.1063/1.4767358 |
0.774 |
|
| 2012 |
Shao J, Vandervelde TE, Barve A, Stintz A, Krishna S. Increased normal incidence photocurrent in quantum dot infrared photodetectors Applied Physics Letters. 101. DOI: 10.1063/1.4764905 |
0.839 |
|
| 2012 |
Schuler-Sandy T, Myers S, Klein B, Gautam N, Ahirwar P, Tian ZB, Rotter T, Balakrishnan G, Plis E, Krishna S. Gallium free type II InAs/InAs xSb 1-x superlattice photodetectors Applied Physics Letters. 101. DOI: 10.1063/1.4745926 |
0.782 |
|
| 2012 |
Gautam N, Myers S, Barve AV, Klein B, Smith EP, Rhiger DR, Dawson LR, Krishna S. High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice Applied Physics Letters. 101. DOI: 10.1063/1.4733660 |
0.834 |
|
| 2012 |
Barve AV, Meesala S, Sengupta S, Kim JO, Chakrabarti S, Krishna S. Effects of contact space charge on the performance of quantum intersubband photodetectors Applied Physics Letters. 100: 191107. DOI: 10.1063/1.4712601 |
0.699 |
|
| 2012 |
Sengupta S, Kim JO, Barve AV, Adhikary S, Sharma YD, Gautam N, Lee SJ, Noh SK, Chakrabarti S, Krishna S. Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure Applied Physics Letters. 100. DOI: 10.1063/1.4711214 |
0.827 |
|
| 2012 |
Lackner D, Steger M, Thewalt MLW, Pitts OJ, Cherng YT, Watkins SP, Plis E, Krishna S. InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations Journal of Applied Physics. 111. DOI: 10.1063/1.3681328 |
0.416 |
|
| 2012 |
Barve AV, Krishna S. Photovoltaic quantum dot quantum cascade infrared photodetector Applied Physics Letters. 100: 021105. DOI: 10.1063/1.3675905 |
0.755 |
|
| 2012 |
Lee SC, Sharma YD, Krishna S, Brueck SRJ. Leaky-mode effects in plasmonic-coupled quantum dot infrared photodetectors Applied Physics Letters. 100: 011110. DOI: 10.1063/1.3675335 |
0.328 |
|
| 2012 |
Nah J, Kumar SB, Fang H, Chen YZ, Plis E, Chueh YL, Krishna S, Guo J, Javey A. Quantum size effects on the chemical sensing performance of two-dimensional semiconductors Journal of Physical Chemistry C. 116: 9750-9754. DOI: 10.1021/Jp300446Z |
0.378 |
|
| 2012 |
Karim A, Marcks von Würtemberg R, Asplund C, Malm H, Andersson J, Plis E, Krishna S. Characterization of InAs/GaSb type-II superlattice photodiodes for mid-wave IR with different mesa sidewall passivation schemes Physica Status Solidi (C). 9: 1690-1692. DOI: 10.1002/Pssc.201100702 |
0.37 |
|
| 2012 |
Lee SC, Sharma Y, Krishna S, Brueck SRJ. Leaky-mode effects in InAs quantum-dot infrared photodetectors coupled to metal photonic crystals 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.345 |
|
| 2011 |
Takei K, Fang H, Kumar SB, Kapadia R, Gao Q, Madsen M, Kim HS, Liu CH, Chueh YL, Plis E, Krishna S, Bechtel HA, Guo J, Javey A. Quantum confinement effects in nanoscale-thickness InAs membranes. Nano Letters. 11: 5008-12. PMID 22007924 DOI: 10.1021/Nl2030322 |
0.656 |
|
| 2011 |
Jang WY, Hayat MM, Godoy SE, Bender SC, Zarkesh-Ha P, Krishna S. Data compressive paradigm for multispectral sensing using tunable DWELL mid-infrared detectors. Optics Express. 19: 19454-72. PMID 21996886 DOI: 10.1364/Oe.19.019454 |
0.718 |
|
| 2011 |
Lee SJ, Ku Z, Barve A, Montoya J, Jang WY, Brueck SR, Sundaram M, Reisinger A, Krishna S, Noh SK. A monolithically integrated plasmonic infrared quantum dot camera. Nature Communications. 2: 286. PMID 21505442 DOI: 10.1038/Ncomms1283 |
0.836 |
|
| 2011 |
Barve AV, Sharma YD, Montoya J, Shao J, Vandervelde T, Rotter T, Krishna S. Engineering the barrier of quantum dots-in-a-well (DWELL) infrared photodetectors for high temperature operation International Journal of High Speed Electronics and Systems. 20: 549-555. DOI: 10.1142/S0129156411006842 |
0.851 |
|
| 2011 |
Banerjee K, Huang J, Ghosh S, Xu R, Takoudis CG, Plis E, Krishna S, Ketharanathan S, Chriss M. Surface study of thioacetamide and zinc sulfide passivated long wavelength infrared type-II strained layer superlattice Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.900198 |
0.545 |
|
| 2011 |
Krishna S. Quantum dot focal plane array with plasmonic resonator Proceedings of Spie - the International Society For Optical Engineering. 8095. DOI: 10.1117/12.895274 |
0.451 |
|
| 2011 |
Myers S, Plis E, Morath C, Cowan V, Gautam N, Klein B, Kutty MN, Naydenkov M, Schuler-Sandy T, Krishna S. Comparison of superlattice based dual color nBn and pBp infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 8155. DOI: 10.1117/12.894986 |
0.771 |
|
| 2011 |
Plis EA, Gautam N, Kutty MN, Myers S, Klein B, Schuler-Sandy T, Naydenkov M, Krishna S. Performance of long-wave infrared InAs/GaSb strained layer superlattice detectors for the space applications Proceedings of Spie - the International Society For Optical Engineering. 8164. DOI: 10.1117/12.893706 |
0.775 |
|
| 2011 |
Barve AV, Kim JO, Sharma YD, Rotter T, Sengupta S, Montoya J, Krishna S. Characterization of different transitions in quantum dots-in-a-well (DWELL) infrared photodetectors Proceedings of Spie. 8012: 801241. DOI: 10.1117/12.892025 |
0.768 |
|
| 2011 |
Plis E, Klein B, Gautam N, Myers S, Kutty MN, Naydenkov M, Krishna S. Performance optimization of long-wave infrared detectors based on InAs/GaSb strained layer superlattices Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.885856 |
0.77 |
|
| 2011 |
Cowan VM, Morath CP, Myers S, Gautam N, Krishna S. Low Temperature Noise Measurement of an InAs/GaSb-based nBn MWIR Detector Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.884808 |
0.642 |
|
| 2011 |
Plis E, Gautam N, Myers S, Krishna SS, Smith EP, Johnson S, Krishna S. High performance dual-band InAs/GaSb SLS detectors with nBn and pBp architectures Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.882399 |
0.634 |
|
| 2011 |
Shao J, Vandervelde TE, Barve A, Jang WY, Stintz A, Krishna S. Barrier engineered superlattice and quantum dot detectors for HOT operation Proceedings of Spie - the International Society For Optical Engineering. 7945. DOI: 10.1117/12.876406 |
0.856 |
|
| 2011 |
Cowan VM, Morath CP, Swift SM, Myers S, Gautam N, Krishna S. Gamma-ray irradiation effects on InAs/GaSb-based nBn IR detector Proceedings of Spie - the International Society For Optical Engineering. 7945. DOI: 10.1117/12.873413 |
0.629 |
|
| 2011 |
Shao J, Vandervelde TE, Barve A, Jang WY, Stintz A, Krishna S. Enhanced normal incidence photocurrent in quantum dot infrared photodetectors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3562186 |
0.854 |
|
| 2011 |
Shao J, Vandervelde TE, Jang WY, Stintz A, Krishna S. High operating temperature quantum-dot infrared photodetector using advanced capping techniques Ieee Transactions On Nanotechnology. 10: 1010-1014. DOI: 10.1109/Tnano.2010.2096231 |
0.852 |
|
| 2011 |
Andrews JR, Restaino SR, Teare SW, Sharma YD, Jang WY, Vandervelde TE, Brown JS, Reisinger A, Sundaram M, Krishna S, Lester L. Comparison of quantum dots-in-a-double-well and quantum dots-in-a-well focal plane arrays in the long-wave infrared Ieee Transactions On Electron Devices. 58: 2022-2027. DOI: 10.1109/Ted.2011.2140374 |
0.846 |
|
| 2011 |
Krishna S. Infrared detectors with plasmonic structures Ieee Photonic Society 24th Annual Meeting, Pho 2011. 665. DOI: 10.1109/Pho.2011.6110724 |
0.345 |
|
| 2011 |
Jang WY, Hayat MM, Godoy SE, Zarkesh-Ha P, Bender SC, Krishna S. Compressive multispectral sensing algorithm with tunable quantum dots-in-a-well infrared photodetectors Ieee Photonic Society 24th Annual Meeting, Pho 2011. 147-148. DOI: 10.1109/Pho.2011.6110468 |
0.709 |
|
| 2011 |
Xu JF, Fiorante GRC, Zarkesh-Ha P, Krishna S. A Readout Integrated Circuit (ROIC) with hybrid source/sensor array Ieee Photonic Society 24th Annual Meeting, Pho 2011. 97-98. DOI: 10.1109/Pho.2011.6110443 |
0.305 |
|
| 2011 |
Barve AV, Kim JO, Sengupta S, Sharma YD, Shao J, Adhikary S, Rottera T, Krishna S. Quantum dots-in-a-well (DWELL) infrared photodetectors with confinement enhancing barriers Photomedicine and Laser Surgery. 95-96. DOI: 10.1109/Pho.2011.6110442 |
0.855 |
|
| 2011 |
Gautam N, Barve AV, Myers S, Klein B, Plis E, Naydenkov M, Kutty MN, Schuler-Sandy T, Krishna S. Polarization selective interband transitions in type-II InAs/GaSb superlattices Ieee Photonic Society 24th Annual Meeting, Pho 2011. 33-34. DOI: 10.1109/Pho.2011.6110411 |
0.787 |
|
| 2011 |
Paskaleva BS, Jang WY, Bender SC, Sharma YD, Krishna S, Hayat MM. Multispectral classification with bias-tunable quantum Dots-in-a-Well focal plane arrays Ieee Sensors Journal. 11: 1342-1351. DOI: 10.1109/Jsen.2010.2095456 |
0.749 |
|
| 2011 |
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S. Noise, gain, and responsivity in low-strain quantum dot infrared photodetectors with up to 80 dot-in-a-well periods Ieee Journal of Quantum Electronics. 47: 607-613. DOI: 10.1109/JQE.2011.2107732 |
0.844 |
|
| 2011 |
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY, Hayat MM. Versatile spectral imaging with an algorithm-based spectrometer using highly tuneable quantum dot infrared photodetectors Ieee Journal of Quantum Electronics. 47: 190-197. DOI: 10.1109/Jqe.2010.2065216 |
0.82 |
|
| 2011 |
Plis EA, Krishna SS, Gautam N, Myers S, Krishna S. Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture Ieee Photonics Journal. 3: 234-240. DOI: 10.1109/Jphot.2011.2125949 |
0.683 |
|
| 2011 |
Zhang J, Wang L, Krishna S, Sheik-Bahae M, Brueck SRJ. Saturation of the second harmonic generation from GaAs-filled metallic hole arrays by nonlinear absorption Physical Review B. 83. DOI: 10.1103/Physrevb.83.165438 |
0.417 |
|
| 2011 |
Klein B, Plis E, Kutty MN, Gautam N, Albrecht A, Myers S, Krishna S. Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors Journal of Physics D: Applied Physics. 44: 075102. DOI: 10.1088/0022-3727/44/7/075102 |
0.752 |
|
| 2011 |
Takei K, Chuang S, Fang H, Kapadia R, Liu C, Nah J, Sul Kim H, Plis E, Krishna S, Chueh Y, Javey A. Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness Applied Physics Letters. 99: 103507. DOI: 10.1063/1.3636110 |
0.358 |
|
| 2011 |
Gautam N, Naydenkov M, Myers S, Barve AV, Plis E, Rotter T, Dawson LR, Krishna S. Three color infrared detector using InAs/GaSb superlattices with unipolar barriers Applied Physics Letters. 98: 121106. DOI: 10.1063/1.3570687 |
0.779 |
|
| 2011 |
Ford AC, Yeung CW, Chuang S, Kim HS, Plis E, Krishna S, Hu C, Javey A. Ultrathin body InAs tunneling field-effect transistors on Si substrates Applied Physics Letters. 98: 113105. DOI: 10.1063/1.3567021 |
0.566 |
|
| 2011 |
Fang H, Madsen M, Carraro C, Takei K, Kim HS, Plis E, Chen SY, Krishna S, Chueh YL, Maboudian R, Javey A. Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator Applied Physics Letters. 98. DOI: 10.1063/1.3537963 |
0.542 |
|
| 2011 |
Plis E, Krishna SS, Smith EP, Johnson S, Krishna S. Voltage controllable dual-band response from InAs/GaSb strained layer superlattice detectors with nBn design Electronics Letters. 47: 133-134. DOI: 10.1049/El.2010.3096 |
0.41 |
|
| 2011 |
Gautam N, Kim H, Myers S, Plis E, Kutty M, Naydenkov M, Klein B, Dawson L, Krishna S. Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection Infrared Physics & Technology. 54: 273-277. DOI: 10.1016/J.Infrared.2010.12.028 |
0.789 |
|
| 2011 |
Plis E, Kutty M, Myers S, Kim H, Gautam N, Dawson L, Krishna S. Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors Infrared Physics & Technology. 54: 252-257. DOI: 10.1016/J.Infrared.2010.12.024 |
0.725 |
|
| 2011 |
Barve AV, Montaya J, Sharma Y, Rotter T, Shao J, Jang WY, Meesala S, Lee SJ, Krishna S. High temperature operation of quantum dots-in-a-well infrared photodetectors Infrared Physics and Technology. 54: 215-219. DOI: 10.1016/J.Infrared.2010.12.016 |
0.849 |
|
| 2011 |
Barve AV, Krishna S. Quantum Dot Infrared Photodetectors Semiconductors and Semimetals. 84: 153-193. DOI: 10.1016/B978-0-12-381337-4.00003-6 |
0.748 |
|
| 2010 |
Ko H, Takei K, Kapadia R, Chuang S, Fang H, Leu PW, Ganapathi K, Plis E, Kim HS, Chen SY, Madsen M, Ford AC, Chueh YL, Krishna S, Salahuddin S, et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature. 468: 286-9. PMID 21068839 DOI: 10.1038/Nature09541 |
0.589 |
|
| 2010 |
Chang CC, Sharma YD, Kim YS, Bur JA, Shenoi RV, Krishna S, Huang D, Lin SY. A surface plasmon enhanced infrared photodetector based on InAs quantum dots. Nano Letters. 10: 1704-9. PMID 20405905 DOI: 10.1021/Nl100081J |
0.82 |
|
| 2010 |
Rosenberg J, Shenoi RV, Krishna S, Painter O. Design of plasmonic photonic crystal resonant cavities for polarization sensitive infrared photodetectors. Optics Express. 18: 3672-86. PMID 20389377 DOI: 10.1364/Oe.18.003672 |
0.768 |
|
| 2010 |
Vandervelde TE, Krishna S. Progress and prospects for quantum dots in a well infrared photodetectors. Journal of Nanoscience and Nanotechnology. 10: 1450-60. PMID 20355535 DOI: 10.1166/Jnn.2010.2028 |
0.532 |
|
| 2010 |
Myers S, Plis E, Krishna S, Smith E. Heterostructures improve IR detector performance Spie Newsroom. DOI: 10.1117/2.1201010.003269 |
0.311 |
|
| 2010 |
Cowan VM, Morath CP, Swift SM, LeVan PD, Myers S, Plis E, Krishna S. Electrical and optical characterization of InAs/GaSb-based nBn IR detector Proceedings of Spie. 7780: 778006. DOI: 10.1117/12.862547 |
0.426 |
|
| 2010 |
Krishna S. Barrier engineering in superlattices and quantum dots for Higher Operating Temperature Proceedings of Spie - the International Society For Optical Engineering. 7808. DOI: 10.1117/12.862072 |
0.48 |
|
| 2010 |
Ghosh S, Banerjee K, Duan Q, Grein CH, Plis EA, Krishna S, Hayat MM. Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.858012 |
0.604 |
|
| 2010 |
Wong AF, Nelson MJ, Plis EA, Skrutskie MF, Yao L, Vandervelde T, Krishna S, Kim H, Khoshakhlagh A, Myers SA. Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observation Proceedings of Spie - the International Society For Optical Engineering. 7742. DOI: 10.1117/12.857786 |
0.81 |
|
| 2010 |
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY, Hayat MM. Quantum dot infrared photodetectors with highly tunable spectral response for an algorithm based spectrometer Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.852650 |
0.746 |
|
| 2010 |
Krishna S. Multimodal sensing: Enhanced functionality with data compression Proceedings of Spie - the International Society For Optical Engineering. 7679. DOI: 10.1117/12.850956 |
0.302 |
|
| 2010 |
Khoshakhlagh A, Myers S, Plis E, Kutty MN, Klein B, Gautam N, Kim H, Smith EPG, Rhiger D, Johnson SM, Krishna S. Mid-wavelength InAsSb detectors based on nBn design Proceedings of Spie. 7660. DOI: 10.1117/12.850428 |
0.81 |
|
| 2010 |
Montoya J, Barve A, Shenoi R, Naydenkov M, Kim H, Ku Z, Brueck SRJ, Krishna S, Lee SJ, Noh SK. Backside illuminated infrared detectors with plasmonic resonators Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.850382 |
0.821 |
|
| 2010 |
Shao J, Vandervelde TE, Jang WY, Stintz A, Krishna S. Improving the operating temperature of quantum dots-in-a-well detectors Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.843676 |
0.778 |
|
| 2010 |
Sharma YD, Kutty MN, Shenoi RV, Barve AV, Myers S, Shao J, Plis E, Lee S, Noh S, Krishna S. Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: C3G1-C3G7. DOI: 10.1116/1.3319324 |
0.841 |
|
| 2010 |
Plis E, Khoshakhlagh A, Myers S, Kim HS, Gautam N, Sharma YD, Krishna S, Lee SJ, Noh SK. Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: C3G13-C3G18. DOI: 10.1116/1.3276429 |
0.825 |
|
| 2010 |
Shenoi RV, Gin A, Rosenberg J, Shao J, Painter OJ, Krishna S. Origin of resonant peaks in plasmonic dots-in-a-well infrared detectors 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 712-713. DOI: 10.1109/Photonics.2010.5699087 |
0.796 |
|
| 2010 |
Jang WY, Hayat MM, Paskaleva BS, Krishna S. Enhanced efficiency and functionality of algorithmic multispectral sensing using tunable dwell-based MidIR detectors 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 708-709. DOI: 10.1109/Photonics.2010.5699085 |
0.718 |
|
| 2010 |
Tan CH, PVines, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY, Hayat MM. Spectrally tunable quantum dot infrared detectors: Implementation of an algorithm-based spectrometer 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 706-707. DOI: 10.1109/Photonics.2010.5699084 |
0.807 |
|
| 2010 |
Krishna S. The infrared retina: Moving towards the fourth generation infrared detectors with quantum dots and superlattices Photonics. 527-527. DOI: 10.1109/Photonics.2010.5698993 |
0.422 |
|
| 2010 |
Barve A, Shao J, Sharma YD, Vandervelde TE, Sankalp K, Lee SJ, Noh SK, Krishna S. Resonant tunneling barriers in quantum dots-in-a-well infrared photodetectors Ieee Journal of Quantum Electronics. 46: 1105-1114. DOI: 10.1109/Jqe.2010.2043789 |
0.851 |
|
| 2010 |
Shenoi RV, Rosenberg J, Vandervelde TE, Painter OJ, Krishna S. Multispectral quantum dots-in-a-well infrared detectors using plasmon assisted cavities Ieee Journal of Quantum Electronics. 46: 1051-1057. DOI: 10.1109/Jqe.2010.2042682 |
0.806 |
|
| 2010 |
Khoshakhlagh A, Myers S, Kim H, Plis E, Gautam N, Lee SJ, Noh SK, Dawson LR, Krishna S. Long-Wave InAs/GaSb Superlattice Detectors Based on nBn and Pin Designs Ieee Journal of Quantum Electronics. 46: 959-964. DOI: 10.1109/Jqe.2010.2041635 |
0.836 |
|
| 2010 |
Paskaleva BS, Hayat MM, Jang WY, Sharma YD, Bender SC, Krishna S. Joint spatio-spectral based edge detection for multispectral infrared imagery International Geoscience and Remote Sensing Symposium (Igarss). 2198-2201. DOI: 10.1109/IGARSS.2010.5648869 |
0.688 |
|
| 2010 |
Plis E, Rodriguez JB, Balakrishnan G, Sharma YD, Kim HS, Rotter T, Krishna S. Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate Semiconductor Science and Technology. 25: 085010. DOI: 10.1088/0268-1242/25/8/085010 |
0.624 |
|
| 2010 |
Ramirez DA, Shao J, Hayat MM, Krishna S. Midwave infrared quantum dot avalanche photodiode Applied Physics Letters. 97. DOI: 10.1063/1.3520519 |
0.841 |
|
| 2010 |
Plis E, Gautam N, Myers S, Sharma Y, Dawson LR, Krishna S. Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation Applied Physics Letters. 97: 143512. DOI: 10.1063/1.3499290 |
0.656 |
|
| 2010 |
Plis E, Myers S, Kutty MN, Mailfert J, Smith EP, Johnson S, Krishna S. Lateral diffusion of minority carriers in InAsSb-based nBn detectors Applied Physics Letters. 97: 123503. DOI: 10.1063/1.3492853 |
0.379 |
|
| 2010 |
Barve AV, Rotter T, Sharma Y, Lee SJ, Noh SK, Krishna S. Systematic study of different transitions in high operating temperature quantum dots in a well photodetectors Applied Physics Letters. 97: 061105. DOI: 10.1063/1.3475022 |
0.744 |
|
| 2010 |
Khoshakhlagh A, Jaeckel F, Hains C, Rodriguez JB, Dawson LR, Malloy K, Krishna S. Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate Applied Physics Letters. 97: 051109. DOI: 10.1063/1.3457908 |
0.701 |
|
| 2010 |
Lee SC, Krishna S, Brueck SRJ. Light direction-dependent plasmonic enhancement in quantum dot infrared photodetectors Applied Physics Letters. 97: 021112. DOI: 10.1063/1.3454776 |
0.461 |
|
| 2010 |
Gautam N, Kim HS, Kutty MN, Plis E, Dawson LR, Krishna S. Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers Applied Physics Letters. 96: 231107. DOI: 10.1063/1.3446967 |
0.757 |
|
| 2010 |
Plis E, Khoshakhlagh A, Myers S, Gautam N, Sharma YD, Dawson LR, Krishna S, Lee SJ, Noh SK. Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation Applied Physics Letters. 96: 033502. DOI: 10.1063/1.3275711 |
0.815 |
|
| 2010 |
Banerjee K, Ghosh S, Plis E, Krishna S. Study of short-and long-term effectiveness of ammonium sulfide as surface passivation for InAs/GaSb superlattices using X-ray photoelectron spectroscopy Journal of Electronic Materials. 39: 2210-2214. DOI: 10.1007/S11664-010-1298-X |
0.512 |
|
| 2010 |
Kutty MN, Plis E, Khoshakhlagh A, Myers S, Gautam N, Smolev S, Sharma YD, Dawson R, Krishna S, Lee SJ, Noh SK. Study of surface treatments on InAs/GaSb superlattice lwir detectors Journal of Electronic Materials. 39: 2203-2209. DOI: 10.1007/S11664-010-1242-0 |
0.775 |
|
| 2010 |
Myers S, Plis E, Kim HS, Khoshakhlagh A, Gautam N, Lee SJ, Noh SK, Krishna S. Heterostructure engineering in Type II InAs/GaSb strained layer superlattices Physica Status Solidi (C). 7: 2506-2509. DOI: 10.1002/Pssc.200983869 |
0.825 |
|
| 2010 |
Ramirez DA, Shao J, Hayat MM, Krishna S. Linear-mode operation of the quantum-dot avalanche photodiode (QDAP) Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2548-2551. DOI: 10.1002/Pssc.200983867 |
0.841 |
|
| 2009 |
Lee SC, Krishna S, Brueck SR. Quantum dot infrared photodetector enhanced by surface plasma wave excitation. Optics Express. 17: 23160-8. PMID 20052244 DOI: 10.1364/Oe.17.023160 |
0.482 |
|
| 2009 |
Shenoi RV, Rosenberg J, Vandervelde TE, Painter OJ, Krishna S. Multispectral infrared detection using plasmon-assisted cavities Proceedings of Spie - the International Society For Optical Engineering. 7298. DOI: 10.1117/12.818982 |
0.787 |
|
| 2009 |
Ramirez DA, Shao J, Hayat MM, Krishna S. Demonstration of the quantum dot avalanche photodiode (QDAP) Proceedings of Spie. 7320. DOI: 10.1117/12.818778 |
0.843 |
|
| 2009 |
Krishna S. Infrared focal plane arrays based on dots in a well and strained layer superlattices Proceedings of Spie - the International Society For Optical Engineering. 7222. DOI: 10.1117/12.810534 |
0.447 |
|
| 2009 |
Ramirez DA, Shao J, Hayat MM, Krishna S. Recent progress on the quantum-dot avalanche photodiode (QDAP) Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 295-296. DOI: 10.1109/LEOS.2009.5343242 |
0.411 |
|
| 2009 |
Jang WY, Paskaleva BS, Hayat MM, Bender SC, Krishna S. Multispectral classification with bias-tunable quantum dots in a well focal plane array Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 168-169. DOI: 10.1109/LEOS.2009.5343155 |
0.754 |
|
| 2009 |
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY, Hayat MM. Low strain multiple stack quantum dot infrared photodetectors for multispectral and high resolution hyperspectral imaging Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 166-167. DOI: 10.1109/LEOS.2009.5343154 |
0.781 |
|
| 2009 |
Jang WY, Hayat MM, Tyo JS, Attaluri RS, Vandervelde TE, Sharma YD, Shenoi R, Stintz A, Cantwell ER, Bender SC, Lee SJ, Noh SK, Krishna S. Demonstration of bias-controlled algorithmic tuning of quantum dots in a well (DWELL) MidIR detectors Ieee Journal of Quantum Electronics. 45: 674-683. DOI: 10.1109/Jqe.2009.2013150 |
0.838 |
|
| 2009 |
Krishna S, Barve AV, Shenoi RV, Jang W, Myers S, Kim HS, Ramirez D, Montoya J, Kutty MN, Khoshakhlagh A, Gautam N, Shao J, Sharma Y, Plis E, Lee SJ, et al. Infrared Retina using quantum dots in a well and type II InAs/GaSb strained layer superlattice detectors 34th International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz 2009. DOI: 10.1109/ICIMW.2009.5325514 |
0.839 |
|
| 2009 |
Krishna S. The infrared retina Journal of Physics D: Applied Physics. 42: 234005. DOI: 10.1088/0022-3727/42/23/234005 |
0.373 |
|
| 2009 |
Krishna S, Phillips J, Ghosh S, Ma J, Sabarinanthan J, Stiff-Roberts A, Xu J, Zhou W. Frontiers in semiconductor-based devices Journal of Physics D: Applied Physics. 42: 230301-230301. DOI: 10.1088/0022-3727/42/23/230301 |
0.795 |
|
| 2009 |
Rosenberg J, Shenoi RV, Vandervelde TE, Krishna S, Painter O. A multispectral and polarization-selective surface-plasmon resonant midinfrared detector Applied Physics Letters. 95. DOI: 10.1063/1.3244204 |
0.758 |
|
| 2009 |
Myers S, Plis E, Khoshakhlagh A, Kim HS, Sharma Y, Dawson R, Krishna S, Gin A. The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors Applied Physics Letters. 95: 121110. DOI: 10.1063/1.3230069 |
0.811 |
|
| 2009 |
Banerjee K, Ghosh S, Mallick S, Plis E, Krishna S, Grein C. Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode Applied Physics Letters. 94. DOI: 10.1063/1.3139012 |
0.61 |
|
| 2009 |
Alizadeh A, Hays D, Taylor ST, Keimel C, Conway KR, Denault L, Krishnan K, Watkins VH, Neander R, Brown JS, Stintz A, Krishna S, Blumin M, Saveliev I, Ruda HE, et al. Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer templated SiO2 masks Journal of Applied Physics. 105. DOI: 10.1063/1.3082494 |
0.484 |
|
| 2009 |
Lee S, Plis E, Krishna S, Brueck S. Mid-infrared transmission enhancement through sub-wavelength metal hole array using impedance-matching dielectric layer Electronics Letters. 45: 643. DOI: 10.1049/El.2009.0221 |
0.368 |
|
| 2009 |
Plis E, Myers S, Khoshakhlagh A, Kim HS, Sharma Y, Gautam N, Dawson R, Krishna S. InAs/GaSb strained layer superlattice detectors with nBn design Infrared Physics & Technology. 52: 335-339. DOI: 10.1016/J.Infrared.2009.09.008 |
0.832 |
|
| 2009 |
Andrews J, Jang WY, Pezoa JE, Sharma YD, Lee SJ, Noh SK, Hayat MM, Restaino S, Teare SW, Krishna S. Demonstration of a bias tunable quantum dots-in-a-well focal plane array Infrared Physics and Technology. 52: 380-384. DOI: 10.1016/J.Infrared.2009.05.018 |
0.856 |
|
| 2009 |
Banerjee K, Ghosh S, Mallick S, Plis E, Krishna S. Electrical characterization of different passivation treatments for long-wave infrared InAs/GaSb strained layer superlattice photodiodes Journal of Electronic Materials. 38: 1944-1947. DOI: 10.1007/S11664-009-0850-Z |
0.581 |
|
| 2009 |
Lee SC, Ku Z, Jang WY, Kim JH, Hains C, Krishna S, Brueck SRJ. Mid-infrared transmission through a subwavelength circular aperture coupled to a surrounding concentric metal grating by surface plasmon excitation Physica Status Solidi (C) Current Topics in Solid State Physics. 6: S175-S178. DOI: 10.1002/Pssc.200881308 |
0.689 |
|
| 2009 |
Barve A, Lee S, Noh S, Krishna S. Review of current progress in quantum dot infrared photodetectors Laser & Photonics Reviews. 4: 738-750. DOI: 10.1002/Lpor.200900031 |
0.761 |
|
| 2008 |
Prasankumar RP, Attaluri RS, Averitt RD, Urayama J, Weisse-Bernstein N, Rotella P, Stintz AD, Krishna S, Taylor AJ. Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure. Optics Express. 16: 1165-73. PMID 18542190 DOI: 10.1364/Oe.16.001165 |
0.842 |
|
| 2008 |
Banerjee K, Mallick S, Ghosh S, Plis E, Rodriguez JB, Krishna S, Grein C. Single Carrier Initiated Low Excess Noise Mid-Wavelength Infrared Avalanche Photodiode using InAs-GaSb Strained Layer Superlattice Mrs Proceedings. 1076. DOI: 10.1557/Proc-1076-K02-02 |
0.424 |
|
| 2008 |
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S. Multiple stack quantum dot infrared photodetectors Proceedings of Spie - the International Society For Optical Engineering. 7113. DOI: 10.1117/12.802247 |
0.863 |
|
| 2008 |
Shenoi RV, Hou J, Sharma Y, Shao J, Vandervelde TE, Krishna S. Low strain quantum dots in a double well infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 7082. DOI: 10.1117/12.795661 |
0.853 |
|
| 2008 |
Andrews JR, Restaino SR, Teare SW, Krishna S, Lester L, Wilcox CC, Martinez T, Santiago F. Precision radiometry using a tunable InAs/InGaAs quantum dot in a well infrared focal plane array Proceedings of Spie - the International Society For Optical Engineering. 7082. DOI: 10.1117/12.795599 |
0.843 |
|
| 2008 |
Vandervelde TE, Lenz MC, Varley E, Barve A, Shao J, Shenoi R, Ramirez DA, Jang W, Sharma YD, Krishna S. Multicolor quantum dots-in-a-well focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 6940. DOI: 10.1117/12.782123 |
0.847 |
|
| 2008 |
Shenoi RV, Attaluri RS, Siroya A, Shao J, Sharma YD, Stintz A, Vandervelde TE, Krishna S. Low-strain InAsInGaAsGaAs quantum dots-in-a-well infrared photodetector Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1136-1139. DOI: 10.1116/1.2835063 |
0.843 |
|
| 2008 |
Bishop G, Plis E, Rodriguez JB, Sharma YD, Kim HS, Dawson LR, Krishna S. nBn detectors based on InAs∕GaSb type-II strain layer superlattice Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 1145. DOI: 10.1116/1.2830627 |
0.614 |
|
| 2008 |
Paskaleva B, Hayat MM, Wang Z, Tyo JS, Krishna S. Canonical Correlation Feature Selection for Sensors With Overlapping Bands: Theory and Application Ieee Transactions On Geoscience and Remote Sensing. 46: 3346-3358. DOI: 10.1109/Tgrs.2008.921637 |
0.334 |
|
| 2008 |
Shao J, Vandervelde TE, Jang WY, Stintz A, Krishna S. High operating temperature InAs quantum dot infrared photodetector via selective capping techniques 2008 8th Ieee Conference On Nanotechnology, Ieee-Nano. 112-115. DOI: 10.1109/NANO.2008.41 |
0.771 |
|
| 2008 |
Krishna S. Mid infrared focal plane arrays with nanoscale quantum dots and superlattices 2008 8th Ieee Conference On Nanotechnology, Ieee-Nano. 42-43. DOI: 10.1109/NANO.2008.20 |
0.396 |
|
| 2008 |
Barve AV, Shah SY, Shao J, Vandervelde TE, Shenoi R, Jang WY, Krishna S. Reduction in dark current using resonant tunneling barrier in dots-in-awell long wavelength infrared photodetectors Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 360-361. DOI: 10.1109/LEOS.2008.4688639 |
0.817 |
|
| 2008 |
Banerjee K, Mallick S, Ghosh S, Plis E, Krishna S, Grein C. Hole initiated mid wave infrared InAs/GaSb strained layer superlattice avalanche photodiode Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 298-299. DOI: 10.1109/LEOS.2008.4688608 |
0.504 |
|
| 2008 |
Vandervelde TE, Lenz MC, Varley E, Barve A, Shao J, Shenoi RV, Ramirez DA, Jang W, Sharma YD, Krishna S. Quantum dots-in-a-well focal plane arrays Ieee Journal On Selected Topics in Quantum Electronics. 14: 1150-1161. DOI: 10.1109/Jstqe.2008.918246 |
0.839 |
|
| 2008 |
Paskalva BS, Hayat MM, Jang WY, Krishna S. A new approach for spatio-spectral feature selection for sensors with noisy and overlapping spectral bands International Geoscience and Remote Sensing Symposium (Igarss). 5: V385-V388. DOI: 10.1109/IGARSS.2008.4780109 |
0.653 |
|
| 2008 |
Barve AV, Shah SY, Shao J, Vandervelde TE, Shenoi RV, Jang WY, Krishna S. Reduction in dark current using resonant tunneling barriers in quantum dots-in-a-well long wavelength infrared photodetector Applied Physics Letters. 93. DOI: 10.1063/1.2996410 |
0.833 |
|
| 2008 |
Plis E, Kim HS, Bishop G, Krishna S, Banerjee K, Ghosh S. Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors Applied Physics Letters. 93. DOI: 10.1063/1.2990049 |
0.649 |
|
| 2008 |
Martyniuk P, Krishna S, Rogalski A. Assessment of quantum dot infrared photodetectors for high temperature operation Journal of Applied Physics. 104: 034314. DOI: 10.1063/1.2968128 |
0.36 |
|
| 2008 |
Kim HS, Plis E, Rodriguez JB, Bishop GD, Sharma YD, Dawson LR, Krishna S, Bundas J, Cook R, Burrows D, Dennis R, Patnaude K, Reisinger A, Sundaram M. Mid-IR focal plane array based on type-II InAs∕GaSb strain layer superlattice detector with nBn design Applied Physics Letters. 92: 183502. DOI: 10.1063/1.2920764 |
0.606 |
|
| 2008 |
Kim HS, Plis E, Rodriguez JB, Bishop G, Sharma YD, Krishna S. N-type ohmic contact on type-II InAs/GaSb strained layer superlattices Electronics Letters. 44: 881-882. DOI: 10.1049/El:20081294 |
0.514 |
|
| 2008 |
Ghosh S, Mallick S, Banerjee K, Grein C, Velicu S, Zhao J, Silversmith D, Rodriguez JB, Plis E, Krishna S. Low-noise mid-wavelength infrared avalanche photodiodes Journal of Electronic Materials. 37: 1764-1769. DOI: 10.1007/S11664-008-0542-0 |
0.612 |
|
| 2007 |
Weerasekara A, Rinzan M, Matsik S, Perera AG, Buchanan M, Liu HC, von Winckel G, Stintz A, Krishna S. n-Type GaAs/AlGaAs heterostructure detector with a 3.2 THz threshold frequency. Optics Letters. 32: 1335-7. PMID 17440579 DOI: 10.1364/Ol.32.001335 |
0.472 |
|
| 2007 |
Shenoi RV, Ramirez DA, Sharma Y, Attaluri RS, Rosenberg J, Painter OJ, Krishna S. Plasmon assisted photonic crystal quantum dot sensors Proceedings of Spie - the International Society For Optical Engineering. 6713. DOI: 10.1117/12.735724 |
0.836 |
|
| 2007 |
Varley ES, Ramirez DA, Brown JS, Lee SJ, Stintz A, Lenz M, Krishna S, Reisinger A, Sundaram M. Demonstration of a two-color 320 x 256 quantum dots-in-a-well focal plane array Proceedings of Spie. 6678. DOI: 10.1117/12.732566 |
0.723 |
|
| 2007 |
Attaluri RS, Shao J, Posani KT, Lee SJ, Brown JS, Stintz A, Krishna S. Resonant cavity enhanced InAs∕In[sub 0.15]Ga[sub 0.85]As dots-in-a-well quantum dot infrared photodetector Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 1186. DOI: 10.1116/1.2746054 |
0.844 |
|
| 2007 |
Sharma YD, Bishop G, Kim HS, Rodriguez JB, Plis E, Balakrishnan G, Dawson LR, Huffaker DL, Krishna S. Type II strain layer superlattices (SLS's) grown on GaAs substrates Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 96-97. DOI: 10.1109/LEOS.2007.4382293 |
0.327 |
|
| 2007 |
Gunapala SD, Bandara SV, Hill CJ, Ting DZ, Liu JK, Rafol SB, Blazejewski ER, Mumolo JM, Keo SA, Krishna S, Chang Y, Shott CA. 640$\,\times\,$512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array Ieee Journal of Quantum Electronics. 43: 230-237. DOI: 10.1109/Jqe.2006.889645 |
0.557 |
|
| 2007 |
Krishna S, Gunapala S, Bandara S, Hill C, Ting D. Quantum Dot Based Infrared Focal Plane Arrays Proceedings of the Ieee. 95: 1838-1852. DOI: 10.1109/JPROC.2007.900969 |
0.387 |
|
| 2007 |
Prasankumar RP, Attaluri RS, Averitt RD, Stintz A, Krishna S, Taylor AJ. Ultrafast carrier dynamics in an InAs/InGaAs quantum-dots-in-a-well photodetector Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2007.4453180 |
0.378 |
|
| 2007 |
Khoshakhlagh A, Rodriguez JB, Plis E, Bishop GD, Sharma YD, Kim HS, Dawson LR, Krishna S. Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors Applied Physics Letters. 91: 263504. DOI: 10.1063/1.2824819 |
0.778 |
|
| 2007 |
Mallick S, Banerjee K, Ghosh S, Plis E, Rodriguez JB, Krishna S, Grein C. Ultralow noise midwave infrared InAs-GaSb strain layer superlattice avalanche photodiode Applied Physics Letters. 91. DOI: 10.1063/1.2817608 |
0.595 |
|
| 2007 |
Plis E, Rodriguez JB, Kim HS, Bishop G, Sharma YD, Dawson LR, Krishna S, Lee SJ, Jones CE, Gopal V. Type II InAs∕GaSb strain layer superlattice detectors with p-on-n polarity Applied Physics Letters. 91: 133512. DOI: 10.1063/1.2790078 |
0.524 |
|
| 2007 |
Srinivasan K, Painter O, Stintz A, Krishna S. Single quantum dot spectroscopy using a fiber taper waveguide near-field optic Applied Physics Letters. 91: 091102. DOI: 10.1063/1.2775811 |
0.422 |
|
| 2007 |
Varley E, Lenz M, Lee SJ, Brown JS, Ramirez DA, Stintz A, Krishna S, Reisinger A, Sundaram M. Single bump, two-color quantum dot camera Applied Physics Letters. 91. DOI: 10.1063/1.2775087 |
0.721 |
|
| 2007 |
Rodriguez JB, Plis E, Bishop G, Sharma YD, Kim H, Dawson LR, Krishna S. nBn structure based on InAs∕GaSb type-II strained layer superlattices Applied Physics Letters. 91: 043514. DOI: 10.1063/1.2760153 |
0.592 |
|
| 2007 |
Matthews MR, Steed RJ, Frogley MD, Phillips CC, Attaluri RS, Krishna S. Transient photoconductivity measurements of carrier lifetimes in an InAs/In0.15Ga0.85As dots-in-a-well detector Applied Physics Letters. 90. DOI: 10.1063/1.2712810 |
0.815 |
|
| 2007 |
Balakrishnan G, Mehta M, Kutty MN, Patel P, Albrecht AR, Rotella P, Krishna S, Dawson LR, Huffaker DL. Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates Electronics Letters. 43: 244-245. DOI: 10.1049/El:20073333 |
0.377 |
|
| 2007 |
Weerasekara A, Rinzan M, Matsik S, Perera A, Buchanan M, Liu H, von Winckel G, Stintz A, Krishna S. Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity Infrared Physics & Technology. 50: 194-198. DOI: 10.1016/J.Infrared.2006.10.019 |
0.377 |
|
| 2007 |
Jayaweera P, Matsik S, Tennakone K, Perera A, Liu H, Krishna S. Spin split-off transition based IR detectors operating at high temperatures Infrared Physics & Technology. 50: 279-283. DOI: 10.1016/J.Infrared.2006.10.007 |
0.308 |
|
| 2007 |
Gunapala S, Bandara S, Hill C, Ting D, Liu J, Rafol S, Blazejewski E, Mumolo J, Keo S, Krishna S, Chang Y, Shott C. Demonstration of 640×512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array Infrared Physics & Technology. 50: 149-155. DOI: 10.1016/j.infrared.2006.10.004 |
0.395 |
|
| 2006 |
Srinivasan K, Borselli M, Painter O, Stintz A, Krishna S. Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots. Optics Express. 14: 1094-105. PMID 19503431 DOI: 10.1364/Oe.14.001094 |
0.445 |
|
| 2006 |
Sakoglu U, Hayat MM, Tyo JS, Dowd P, Annamalai S, Posani KT, Krishna S. Statistical adaptive sensing by detectors with spectrally overlapping bands. Applied Optics. 45: 7224-34. PMID 16983407 DOI: 10.1364/Ao.45.007224 |
0.388 |
|
| 2006 |
Wilcox CC, Andrews JR, Restaino SR, Teare SW, Payne DM, Krishna S. Analysis of a combined tip-tilt and deformable mirror. Optics Letters. 31: 679-81. PMID 16544588 DOI: 10.1364/Ol.31.000679 |
0.729 |
|
| 2006 |
Gunapala SD, Bandara SV, Hill CJ, Ting DZ, Liu JK, Rafol SB, Blazejewski ER, Mumolo JM, Keo SA, Krishna S, Chang Y-, Shott CA. 640x512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array Remote Sensing. 6361: 636116. DOI: 10.1117/12.683772 |
0.565 |
|
| 2006 |
Attaluri RS, Annamalai S, Posani KT, Stintz A, Krishna S. Influence of Si doping on the performance of quantum dots-in-well photodetectors Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1553. DOI: 10.1116/1.2190676 |
0.831 |
|
| 2006 |
Balakrishnan G, Jallipalli A, Rotella P, Huang S, Khoshakhlagh A, Amtout A, Krishna S, Dawson LR, Huffaker DL. Room-temperature optically pumped (Al)GaSb vertical-cavity surface-emitting laser monolithically grown on an Si(1 0 0) substrate Ieee Journal On Selected Topics in Quantum Electronics. 12: 1636-1641. DOI: 10.1109/Jstqe.2006.885342 |
0.758 |
|
| 2006 |
Plis E, Lee SJ, Zhu Z, Amtout A, Krishna S. InAs/GaSb Superlattice Detectors Operating at Room Temperature Ieee Journal of Selected Topics in Quantum Electronics. 12: 1269-1274. DOI: 10.1109/Jstqe.2006.882641 |
0.489 |
|
| 2006 |
Zhu ZM, Bhattacharya P, Plis E, Su XH, Krishna S. Low dark current InAs/GaSb type-II superlattice infrared photodetectors with resonant tunnelling filters Journal of Physics D: Applied Physics. 39: 4997-5001. DOI: 10.1088/0022-3727/39/23/015 |
0.628 |
|
| 2006 |
Posani KT, Tripathi V, Annamalai S, Weisse-Bernstein NR, Krishna S, Perahia R, Crisafulli O, Painter OJ. Nanoscale quantum dot infrared sensors with photonic crystal cavity Applied Physics Letters. 88. DOI: 10.1063/1.2194167 |
0.426 |
|
| 2006 |
Attaluri RS, Annamalai S, Posani KT, Stintz A, Krishna S. Effects of Si doping on normal incidence InAs∕In0.15Ga0.85As dots-in-well quantum dot infrared photodetectors Journal of Applied Physics. 99: 083105. DOI: 10.1063/1.2189973 |
0.342 |
|
| 2006 |
Balakrishnan G, Huang SH, Khoshakhlagh A, Jallipalli A, Rotella P, Amtout A, Krishna S, Haines CP, Dawson LR, Huffaker DL. Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate Electronics Letters. 42: 350-352. DOI: 10.1049/El:20064286 |
0.767 |
|
| 2006 |
Plis E, Rodriguez J, Lee S, Krishna S. Electrochemical sulphur passivation of InAs/GaSb strain layer superlattice detectors Electronics Letters. 42: 1248. DOI: 10.1049/El:20062495 |
0.379 |
|
| 2006 |
Fan W, Zhang S, Panoiu N, Abdenour A, Krishna S, Osgood, RM, Malloy KJ, Brueck SRJ. Second Harmonic Generation from a Nanopatterned Isotropic Nonlinear Material Nano Letters. 6: 1027-1030. DOI: 10.1021/Nl0604457 |
0.31 |
|
| 2006 |
Von Winckel G, Krishna S, Coutsias EA. Spectral element modeling of semiconductor heterostructures Mathematical and Computer Modelling. 43: 582-591. DOI: 10.1016/J.Mcm.2005.05.028 |
0.717 |
|
| 2006 |
Krishna S, Forman D, Annamalai S, Dowd P, Varangis P, Tumolillo T, Gray A, Zilko J, Sun K, Liu M, Campbell J, Carothers D. Two-color focal plane arrays based on self assembled quantum dots in a well heterostructure Physica Status Solidi C: Conferences. 3: 439-443. DOI: 10.1002/Pssc.200564162 |
0.562 |
|
| 2005 |
Zhu Z, Plis E, Amtout A, Bhattacharya P, Krishna S. Investigation of Surface Passivation in InAs/GaSb Strained-Layer-Superlattices Using Picosecond Excitation Correlation Measurement and Variable-Area Diode Array Surface Recombination Velocity Measurement Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee01-08 |
0.807 |
|
| 2005 |
Srinivasan K, Borselli M, Johnson TJ, Barclay PE, Painter O, Stintz A, Krishna S. Fiber-Coupled, High-Q AlGaAs Microdisks with Embedded Quantum Dots Frontiers in Optics. DOI: 10.1364/Fio.2005.Fwp3 |
0.376 |
|
| 2005 |
Wilcox C, Restaino S, Andrews J, Teare S, Krishna S, Payne D. Merging wavefront corrective elements for adaptive optics applications: Experimental results Proceedings of Spie - the International Society For Optical Engineering. 6018. DOI: 10.1117/12.669379 |
0.708 |
|
| 2005 |
Krishna S. InAs/InGaAs quantum dots in a well photodetectors Proceedings of Spie - the International Society For Optical Engineering. 5957: 1-7. DOI: 10.1117/12.623133 |
0.378 |
|
| 2005 |
Annamalai S, Dowd P, Forman D, Varangis P, Tumolillo T, Gray A, Sun K, Liu M, Campbell J, Carothers D, Krishna S. Two-color infrared Focal Plane Array on InAs/InGaAs/GaAs quantum dots in a well detectors design Proceedings of Spie - the International Society For Optical Engineering. 5897: 1-4. DOI: 10.1117/12.617775 |
0.543 |
|
| 2005 |
Krishna S. Mid infrared quantum dots in a well infrared photodetectors 2005 5th Ieee Conference On Nanotechnology. 1: 189-192. DOI: 10.1109/NANO.2005.1500683 |
0.394 |
|
| 2005 |
Krishna S, Kwon O, Hayat MM. Theoretical investigation of quantum-dot avalanche photodiodes for mid-infrared applications Ieee Journal of Quantum Electronics. 41: 1468-1473. DOI: 10.1109/Jqe.2005.858791 |
0.499 |
|
| 2005 |
Srinivasan K, Stintz A, Krishna S, Painter O. Photoluminescence measurements of quantum-dot-containing semiconductor microdisk resonators using optical fiber taper waveguides Physical Review B. 72. DOI: 10.1103/Physrevb.72.205318 |
0.403 |
|
| 2005 |
Krishna S. Quantum dots-in-a-well infrared photodetectors Journal of Physics D: Applied Physics. 38: 2142-2150. DOI: 10.1088/0022-3727/38/13/010 |
0.385 |
|
| 2005 |
Krishna S, Forman D, Annamalai S, Dowd P, Varangis P, Tumolillo T, Gray A, Zilko J, Sun K, Liu M, Campbell J, Carothers D. Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1924887 |
0.559 |
|
| 2005 |
Srinivasan K, Borselli M, Johnson TJ, Barclay PE, Painter O, Stintz A, Krishna S. Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1901810 |
0.475 |
|
| 2005 |
Balakrishnan G, Huang SH, Khoshakhlagh A, Hill P, Amtout A, Krishna S, Donati GP, Dawson LR, Huffaker DL. Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate Electronics Letters. 41: 531-532. DOI: 10.1049/el:20050564 |
0.318 |
|
| 2005 |
Krishna S. Quantum dots-in-a-well infrared photodetectors Infrared Physics and Technology. 47: 153-163. DOI: 10.1016/J.Infrared.2005.02.020 |
0.534 |
|
| 2004 |
Sakoğlu Ü, Tyo JS, Hayat MM, Raghavan S, Krishna S. Spectrally adaptive infrared photodetectors with bias-tunable quantum dots Journal of the Optical Society of America B. 21: 7. DOI: 10.1364/Josab.21.000007 |
0.452 |
|
| 2004 |
Rotella P, von Winckel G, Raghavan S, Stintz A, Jiang Y, Krishna S. Study of structural and optical properties of quantum dots-in-a-well heterostructures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 1512. DOI: 10.1116/1.1705578 |
0.331 |
|
| 2004 |
Amtout A, Raghavan S, Rotella P, von Winckel G, Stintz A, Krishna S. Theoretical modeling and experimental characterization of InAs∕InGaAs quantum dots in a well detector Journal of Applied Physics. 96: 3782-3786. DOI: 10.1063/1.1787618 |
0.367 |
|
| 2004 |
Raghavan S, Forman D, Hill P, Weisse-Bernstein NR, Von Winckel G, Rotella P, Krishna S, Kennerly SW, Little JW. Normal-incidence InAs/In 0.15Ga 0.85As quantum dots-in-a-well detector operating in the long-wave infrared atmospheric window (8-12 μm) Journal of Applied Physics. 96: 1036-1039. DOI: 10.1063/1.1760832 |
0.392 |
|
| 2004 |
Farina LA, Lewis KM, Kurdak C, Ghosh S, Krishna S, Bhattacharya P. Drag coupling between a thin Al film and a two-dimensional electron gas near the superconducting transition Physica E: Low-Dimensional Systems and Nanostructures. 22: 341-344. DOI: 10.1016/J.Physe.2003.12.016 |
0.544 |
|
| 2003 |
Kochman B, Stiff-Roberts A, Chakrabarti S, Phillips J, Krishna S, Singh J, Bhattacharya P. Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors Ieee Journal of Quantum Electronics. 39: 459-467. DOI: 10.1109/Jqe.2002.808169 |
0.838 |
|
| 2003 |
Krishna S, Raghavan S, Von Winckel G, Rotella P, Stintz A, Morath CP, Le D, Kennerly SW. Two color InAs/LnGaAs dots-in-a-well detector with background-limited performance at 91 K Applied Physics Letters. 82: 2574-2576. DOI: 10.1063/1.1567806 |
0.31 |
|
| 2003 |
Le D, Morath C, Norton H, Cardimona D, Raghavan S, Rotella P, Stintz S, Fuchs B, Krishna S. High responsivity, LWIR dots-in-a-well quantum dot infrared photodetectors Infrared Physics & Technology. 44: 517-526. DOI: 10.1016/S1350-4495(03)00171-3 |
0.544 |
|
| 2003 |
Rotella P, Raghavan S, Stintz A, Fuchs B, Krishna S, Morath C, Le D, Kennerly SW. Normal incidence InAs/InGaAs dots-in-well detectors with current blocking AlGaAs layer Journal of Crystal Growth. 251: 787-793. DOI: 10.1016/S0022-0248(02)02428-4 |
0.462 |
|
| 2002 |
Bhattacharya P, Stiff-Roberts AD, Krishna S, Kennerly S. Quantum dot infrared detectors and sources International Journal of High Speed Electronics and Systems. 12: 969-994. DOI: 10.1142/S0129156402001885 |
0.769 |
|
| 2002 |
Krishna S, Raghavan S, Stintz A, Morath C, Norton H, Le D, Cardimona DA, Kennerly SW. Radiometric characterization of normal-incidence InAs/In0.15Ga0.85As quantum-dot detectors Proceedings of Spie - the International Society For Optical Engineering. 4823: 75-79. DOI: 10.1117/12.453504 |
0.398 |
|
| 2002 |
Stiff-Roberts AD, Krishna S, Bhattacharya P, Kennerly S. Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1185-1187. DOI: 10.1116/1.1461370 |
0.751 |
|
| 2002 |
Krishna S, Stiff-Roberts AD, Phillips JD, Bhattacharya P, Kennerly SW. Hot dot detectors Ieee Circuits and Devices Magazine. 18: 14-24. DOI: 10.1109/Mcd.2002.981296 |
0.768 |
|
| 2002 |
Krishna S, Raghavan S, Rotella P, Fuchs B, Stintz A, Morath C, Le D, Kennerly SW. Normal incidence, long-wave infrared InAs/In0.15Ga0.85As dots-in-well detectors grown by molecular beam epitaxy Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 247-248. DOI: 10.1109/MBE.2002.1037852 |
0.41 |
|
| 2002 |
Sabarinathan J, Bhattacharya P, Yu P, Krishna S, Cheng J, Steel DG. An electrically injected InAs/GaAs quantum-dot photonic crystal microcavity light-emitting diode Applied Physics Letters. 81: 3876-3878. DOI: 10.1063/1.1521249 |
0.829 |
|
| 2002 |
Raghavan S, Rotella P, Stintz A, Fuchs B, Krishna S, Morath C, Cardimona DA, Kennerly SW. High-responsivity, normal-incidence long-wave infrared (λ∼7. 2μm) InAs/In0.15Ga0.85As dots-in-a-well detector Applied Physics Letters. 81: 1369-1371. DOI: 10.1063/1.1498009 |
0.363 |
|
| 2002 |
Lewis KM, Kurdak C, Krishna S, Bhattacharya P. Charge transformer to enhance noise performance of single-electron transistor amplifiers in high-capacitance applications Applied Physics Letters. 80: 142-144. DOI: 10.1063/1.1431393 |
0.32 |
|
| 2002 |
Krishna S, Bhattacharya P, McCann PJ, Namjou K. Reply to comment on 'room-temperature long-wavelength (/spl lambda = 13.3/spl mu/m) unipolar quantum dot intersubband laser' Electronics Letters. 37: 97-98. DOI: 10.1049/El:20010056 |
0.43 |
|
| 2002 |
Bai X, Kurdak Ç, Krishna S, Bhattacharya P. Quantum-well-based phonon detectors; performance analysis Physica B-Condensed Matter. 316: 362-365. DOI: 10.1016/S0921-4526(02)00508-2 |
0.606 |
|
| 2001 |
Bhattacharya P, Krishna S, Stiff A. Quantum Dot Intersubband Devices The Japan Society of Applied Physics. 2001: 288-289. DOI: 10.7567/Ssdm.2001.D-4-1 |
0.626 |
|
| 2001 |
Bhattacharya P, Stiff-Roberts AD, Krishna S, Kennerly S. Quantum Dot Long-Wavelength Detectors Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H3.2.1 |
0.774 |
|
| 2001 |
Stiff AD, Krishna S, Bhattacharya P, Kennerly SW. Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector Ieee Journal of Quantum Electronics. 37: 1412-1419. DOI: 10.1109/3.958360 |
0.555 |
|
| 2001 |
Krishna S, Bhattacharya P, Singh J, Norris T, Urayama J, McCann PJ, Namjou K. Intersubband gain and stimulated emission in long-wavelength (λ = 13 μm) intersubband In(Ga)As-GaAs quantum-dot electroluminescent devices Ieee Journal of Quantum Electronics. 37: 1066-1074. DOI: 10.1109/3.937396 |
0.486 |
|
| 2001 |
Stiff AD, Krishna S, Bhattacharya P, Kennerly S. High-detectivity, normal-incidence, mid-infrared (λ∼4μm)inAs/GaAs quantum-dot detector operating at 150 k Applied Physics Letters. 79: 421-423. DOI: 10.1063/1.1385584 |
0.556 |
|
| 2001 |
Krishna S, Bhattacharya P, McCann P, Namjou K. Reply: Room-temperature long-wavelength ( = 13.3 [micro sign]m) unipolar quantum dot intersubband laser Electronics Letters. 37: 97. DOI: 10.1049/El:20001095 |
0.527 |
|
| 2001 |
Bhattacharya P, Krishna S, Phillips J, McCann PJ, Namjou K. Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors Journal of Crystal Growth. 227: 27-35. DOI: 10.1016/S0022-0248(01)00627-3 |
0.738 |
|
| 2000 |
Bhatiacharya P, Krishna S, Zhu D, Phillips J, Klotzkin D, Qasaimeh O, Zhou WD, Singh J, Mccann PJ, Namjou K. Optoelectronic Device Applications of Self-Organized In(Ga,Al)As/Ga(Al)As Quantum Dots Mrs Proceedings. 618. DOI: 10.1557/Proc-618-195 |
0.8 |
|
| 2000 |
Krishna S, Sabarinathan J, Linder K, Bhattacharya P, Lita B, Goldman RS. Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1502-1506. DOI: 10.1116/1.591413 |
0.828 |
|
| 2000 |
Bhattacharya P, Klotzkin D, Qasaimeh O, Zhou W, Krishna S, Zhu D. High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers Ieee Journal of Selected Topics in Quantum Electronics. 6: 426-438. DOI: 10.1109/2944.865098 |
0.771 |
|
| 2000 |
Krishna S, Qasaimeh O, Bhattacharya P, McCann PJ, Namjou K. Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser Applied Physics Letters. 76: 3355-3357. DOI: 10.1063/1.126646 |
0.785 |
|
| 2000 |
Krishna S, Bhattacharya P, McCann PJ, Namjou K. Room-temperature long-wavelength (λ = 13.3 μm) unipolar quantum dot intersubband laser Electronics Letters. 36: 1550-1551. DOI: 10.1049/el:20001095 |
0.432 |
|
| 1999 |
Linder KK, Phillips J, Qasaimeh O, Liu XF, Krishna S, Bhattacharya P. Growth and electroluminescent properties of self-organized In[sub 0.4]Ga[sub 0.6]As/GaAs quantum dots grown on silicon Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1116. DOI: 10.1116/1.590704 |
0.784 |
|
| 1999 |
Krishna S, Zhu D, Xu J, Linder KK, Qasaimeh O, Bhattacharya P, Huffaker DL. Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm Journal of Applied Physics. 86: 6135-6138. DOI: 10.1063/1.371664 |
0.745 |
|
| 1999 |
Krishna S, Linder K, Bhattacharya P. Photoluminescence linewidth of self-organized In0.4Ga0.6As/GaAs quantum dots grown on InGaAlAs stressor dots Journal of Applied Physics. 86: 4691-4693. DOI: 10.1063/1.371421 |
0.627 |
|
| 1999 |
Qasaimeh O, Zhou W, Phillips J, Krishna S, Bhattacharya P, Dutta M. Bistability and self-pulsation in quantum-dot lasers with intracavity quantum-dot saturable absorbers Applied Physics Letters. 74: 1654-1656. DOI: 10.1063/1.123644 |
0.769 |
|
| 1999 |
Linder KK, Phillips J, Qasaimeh O, Liu XF, Krishna S, Bhattacharya P, Jiang JC. Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates Applied Physics Letters. 74: 1355-1357. DOI: 10.1063/1.123548 |
0.784 |
|
| 1999 |
Zhou W, Qasaimeh O, Phillips J, Krishna S, Bhattacharya P. Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers Applied Physics Letters. 74: 783-785. DOI: 10.1063/1.123366 |
0.826 |
|
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