Joseph Lyding - Publications

Affiliations: 
1997-2000 Electrical Engineering University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
scanning tunneling microscopy, nanofabrication, nanoelectronics, and IC chip reliability
Website:
https://www.ece.illinois.edu/directory/profile/lyding

184 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Nguyen D, Wallum A, Nguyen HA, Nguyen NT, Lyding JW, Gruebele M. Imaging of Carbon Nanotube Electronic States Polarized by the Field of an Excited Quantum Dot. Acs Nano. PMID 30605600 DOI: 10.1021/acsnano.8b06806  0.44
2018 Nguyen HA, Banerjee P, Nguyen D, Lyding JW, Gruebele M, Jain PK. STM Imaging of Localized Surface Plasmons on Individual Gold Nanoislands. The Journal of Physical Chemistry Letters. PMID 29609463 DOI: 10.1021/acs.jpclett.8b00502  0.44
2018 Zhang Y, Heiranian M, Janicek B, Budrikis Z, Zapperi S, Huang P, Johnson HT, Aluru NR, Lyding JW, Mason N. Strain modulation of graphene by nanoscale substrate curvatures: a molecular view. Nano Letters. PMID 29474080 DOI: 10.1021/acs.nanolett.8b00273  0.6
2018 Nguyen D, Goings JJ, Nguyen HA, Lyding J, Li X, Gruebele M. Orientation-dependent imaging of electronically excited quantum dots. The Journal of Chemical Physics. 148: 064701. PMID 29448801 DOI: 10.1063/1.5012784  0.44
2017 Mehdi Pour M, Lashkov A, Radocea A, Liu X, Sun T, Lipatov A, Korlacki RA, Shekhirev M, Aluru NR, Lyding JW, Sysoev V, Sinitskii A. Laterally extended atomically precise graphene nanoribbons with improved electrical conductivity for efficient gas sensing. Nature Communications. 8: 820. PMID 29018185 DOI: 10.1038/s41467-017-00692-4  0.6
2017 Nguyen DA, Nguyen HA, Lyding JW, Gruebele M. Imaging and Manipulating Energy Transfer Among Quantum Dots at Individual Dot Resolution. Acs Nano. PMID 28525955 DOI: 10.1021/acsnano.7b02649  0.44
2016 Radocea A, Sun T, Vo TH, Sinitskii A, Aluru NR, Lyding JW. Solution-Synthesized Chevron Graphene Nanoribbons Exfoliated onto H:Si(100). Nano Letters. PMID 27936761 DOI: 10.1021/acs.nanolett.6b03709  0.6
2016 Nguyen D, Zhu ZG, Pringle B, Lyding J, Wang WH, Gruebele M. Composition-dependent metallic glass alloys correlate atomic mobility with collective glass surface dynamics. Physical Chemistry Chemical Physics : Pccp. PMID 27283239 DOI: 10.1039/c6cp02654k  0.44
2016 Cress CD, Schmucker SW, Friedman AL, Dev P, Culbertson JC, Lyding JW, Robinson JT. Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control. Acs Nano. PMID 26910346 DOI: 10.1021/acsnano.6b00252  1
2015 Nienhaus L, Goings JJ, Nguyen D, Wieghold S, Lyding JW, Li X, Gruebele M. Imaging Excited Orbitals of Quantum Dots: Experiment and Electronic Structure Theory. Journal of the American Chemical Society. PMID 26518039 DOI: 10.1021/jacs.5b09272  1
2015 Nienhaus L, Wieghold S, Nguyen D, Lyding JW, Scott GE, Gruebele M. Optoelectronic Switching of a Carbon Nanotube Chiral Junction Imaged with Nanometer Spatial Resolution. Acs Nano. PMID 26348682 DOI: 10.1021/acsnano.5b04872  1
2015 Khatib O, Wood JD, McLeod AS, Goldflam MD, Wagner M, Damhorst GL, Koepke JC, Doidge GP, Rangarajan A, Bashir R, Pop E, Lyding JW, Thiemens MH, Keilmann F, Basov DN. Graphene-Based Platform for Infrared Near-Field Nanospectroscopy of Water and Biological Materials in an Aqueous Environment. Acs Nano. PMID 26223158 DOI: 10.1021/acsnano.5b01184  1
2015 Nguyen D, Nienhaus L, Haasch RT, Lyding J, Gruebele M. Sub-nanometer glass surface dynamics induced by illumination. The Journal of Chemical Physics. 142: 234505. PMID 26093566 DOI: 10.1063/1.4922695  1
2015 Do JW, Chang NN, Estrada D, Lian F, Cha H, Duan XJ, Haasch RT, Pop E, Girolami GS, Lyding JW. Solution-mediated selective nanosoldering of carbon nanotube junctions for improved device performance. Acs Nano. 9: 4806-13. PMID 25844819 DOI: 10.1021/nn505552d  1
2015 Wood JD, Doidge GP, Carrion EA, Koepke JC, Kaitz JA, Datye I, Behnam A, Hewaparakrama J, Aruin B, Chen Y, Dong H, Haasch RT, Lyding JW, Pop E. Annealing free, clean graphene transfer using alternative polymer scaffolds. Nanotechnology. 26: 055302. PMID 25580991 DOI: 10.1088/0957-4484/26/5/055302  1
2015 Koepke JC, Wood JD, Horvath CM, Lyding JW, Barraza-Lopez S. Preserving the 7 × 7 surface reconstruction of clean Si(111) by graphene adsorption Applied Physics Letters. 107. DOI: 10.1063/1.4928930  1
2015 Peña Martin P, Lyding J, Rockett A. Scanning tunneling spectroscopy of epitaxial silver indium diselenide Surface Science. 636: 8-12. DOI: 10.1016/j.susc.2015.01.012  1
2014 Nguyen D, Mallek J, Cloud AN, Abelson JR, Girolami GS, Lyding J, Gruebele M. The energy landscape of glassy dynamics on the amorphous hafnium diboride surface. The Journal of Chemical Physics. 141: 204501. PMID 25429948 DOI: 10.1063/1.4901132  1
2014 Mohseni PK, Behnam A, Wood JD, Zhao X, Yu KJ, Wang NC, Rockett A, Rogers JA, Lyding JW, Pop E, Li X. Monolithic III-V nanowire solar cells on graphene via direct van der Waals epitaxy. Advanced Materials (Deerfield Beach, Fla.). 26: 3755-60. PMID 24652703 DOI: 10.1002/adma.201305909  1
2014 Carrion EA, Wood JD, Behman A, Tung M, Lyding JW, Pop E. Variability of graphene mobility and contacts: Surface effects, doping and strain Device Research Conference - Conference Digest, Drc. 199-200. DOI: 10.1109/DRC.2014.6872366  1
2014 Olewicz T, Antczak G, Jurczyszyn L, Lyding JW, Ehrlich G. Coexistence of two diffusion mechanisms: W on W(100) Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/PhysRevB.89.235408  1
2014 Grosse KL, Dorgan VE, Estrada D, Wood JD, Vlassiouk I, Eres G, Lyding JW, King WP, Pop E. Direct observation of resistive heating at graphene wrinkles and grain boundaries Applied Physics Letters. 105. DOI: 10.1063/1.4896676  1
2014 Nienhaus L, Scott GE, Haasch RT, Wieghold S, Lyding JW, Gruebele M. Transparent metal films for detection of single-molecule optical absorption by scanning tunneling microscopy Journal of Physical Chemistry C. 118: 13196-13202. DOI: 10.1021/jp501811z  1
2013 Walling BE, Kuang Z, Hao Y, Estrada D, Wood JD, Lian F, Miller LA, Shah AB, Jeffries JL, Haasch RT, Lyding JW, Pop E, Lau GW. Helical carbon nanotubes enhance the early immune response and inhibit macrophage-mediated phagocytosis of Pseudomonas aeruginosa. Plos One. 8: e80283. PMID 24324555 DOI: 10.1371/journal.pone.0080283  1
2013 Do JW, Estrada D, Xie X, Chang NN, Mallek J, Girolami GS, Rogers JA, Pop E, Lyding JW. Nanosoldering carbon nanotube junctions by local chemical vapor deposition for improved device performance. Nano Letters. 13: 5844-50. PMID 24215439 DOI: 10.1021/nl4026083  1
2013 Mohseni PK, Behnam A, Wood JD, English CD, Lyding JW, Pop E, Li X. In(x)Ga(1-x)As nanowire growth on graphene: van der Waals epitaxy induced phase segregation. Nano Letters. 13: 1153-61. PMID 23421807 DOI: 10.1021/nl304569d  1
2013 Koepke JC, Wood JD, Estrada D, Ong ZY, He KT, Pop E, Lyding JW. Atomic-scale evidence for potential barriers and strong carrier scattering at graphene grain boundaries: a scanning tunneling microscopy study. Acs Nano. 7: 75-86. PMID 23237026 DOI: 10.1021/nn302064p  1
2013 Ye W, Min K, Peña Martin P, Rockett AA, Aluru NR, Lyding JW. Scanning tunneling spectroscopy and density functional calculation of silicon dangling bonds on the Si(100)-2 × 1:H surface Surface Science. 609: 147-151. DOI: 10.1016/j.susc.2012.11.015  1
2012 Ashtekar S, Lyding J, Gruebele M. Temperature-dependent two-state dynamics of individual cooperatively rearranging regions on a glass surface. Physical Review Letters. 109: 166103. PMID 23215096 DOI: 10.1103/PhysRevLett.109.166103  1
2012 Ashtekar S, Nguyen D, Zhao K, Lyding J, Wang WH, Gruebele M. Communication: An obligatory glass surface. The Journal of Chemical Physics. 137: 141102. PMID 23061832 DOI: 10.1063/1.4757975  1
2012 Schmucker SW, Kumar N, Abelson JR, Daly SR, Girolami GS, Bischof MR, Jaeger DL, Reidy RF, Gorman BP, Alexander J, Ballard JB, Randall JN, Lyding JW. Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography. Nature Communications. 3: 935. PMID 22760634 DOI: 10.1038/ncomms1907  1
2012 He KT, Wood JD, Doidge GP, Pop E, Lyding JW. Scanning tunneling microscopy study and nanomanipulation of graphene-coated water on mica. Nano Letters. 12: 2665-72. PMID 22612064 DOI: 10.1021/nl202613t  1
2012 Pea Martin P, Rockett AA, Lyding J. Growth mechanism and surface atomic structure of AgInSe 2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4728160  1
2012 Koepke JC, Wood JD, Estrada D, Ong ZY, Xiong F, Pop E, Lyding JW. Atomic-scale study of scattering and electronic properties of CVD graphene grain boundaries Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322107  1
2012 Do JW, Estrada D, Xie X, Chang NN, Girolami GS, Rogers JA, Pop E, Lyding JW. Nanosoldering carbon nanotube junctions with metal via local chemical vapor deposition for improved device performance Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322102  1
2012 Wood JD, Schmucker SW, Haasch RT, Doidge GP, Nienhaus L, Damhorst GL, Lyons AS, Gruebele M, Bashir R, Pop E, Lyding JW. Improved graphene growth and fluorination on Cu with clean transfer to surfaces Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322101  1
2012 He KT, Wood JD, Doidge GP, Pop E, Lyding JW. Scanning tunneling microscopy characterization of graphene-coated few-layered water on mica Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6321969  1
2012 Timmermans MY, Estrada D, Nasibulin AG, Wood JD, Behnam A, Sun Dm, Ohno Y, Lyding JW, Hassanien A, Pop E, Kauppinen EI. Effect of carbon nanotube network morphology on thin film transistor performance Nano Research. 5: 307-319. DOI: 10.1007/s12274-012-0211-8  1
2011 Wood JD, Schmucker SW, Lyons AS, Pop E, Lyding JW. Effects of polycrystalline cu substrate on graphene growth by chemical vapor deposition. Nano Letters. 11: 4547-54. PMID 21942318 DOI: 10.1021/nl201566c  1
2011 Ashtekar S, Scott G, Lyding J, Gruebele M. Direct imaging of two-state dynamics on the amorphous silicon surface. Physical Review Letters. 106: 235501. PMID 21770518 DOI: 10.1103/PhysRevLett.106.235501  1
2011 Xu Y, He KT, Schmucker SW, Guo Z, Koepke JC, Wood JD, Lyding JW, Aluru NR. Inducing electronic changes in graphene through silicon (100) substrate modification. Nano Letters. 11: 2735-42. PMID 21661740 DOI: 10.1021/nl201022t  1
2011 Lyding JW. Surface chemistry: molecular cart-wheeling. Nature Chemistry. 3: 341-2. PMID 21505487 DOI: 10.1038/nchem.1035  1
2010 Scott G, Ashtekar S, Lyding J, Gruebele M. Direct imaging of room temperature optical absorption with subnanometer spatial resolution. Nano Letters. 10: 4897-900. PMID 21058717 DOI: 10.1021/nl102854s  1
2010 Ye W, Peña Martin PA, Kumar N, Daly SR, Rockett AA, Abelson JR, Girolami GS, Lyding JW. Direct writing of sub-5 nm hafnium diboride metallic nanostructures. Acs Nano. 4: 6818-24. PMID 20964393 DOI: 10.1021/nn1018522  1
2010 Unarunotai S, Koepke JC, Tsai CL, Du F, Chialvo CE, Murata Y, Haasch R, Petrov I, Mason N, Shim M, Lyding J, Rogers JA. Layer-by-layer transfer of multiple, large area sheets of graphene grown in multilayer stacks on a single SiC wafer. Acs Nano. 4: 5591-8. PMID 20843091 DOI: 10.1021/nn101896a  1
2010 He KT, Koepke JC, Barraza-Lopez S, Lyding JW. Separation-dependent electronic transparency of monolayer graphene membranes on III-V semiconductor substrates. Nano Letters. 10: 3446-52. PMID 20718406 DOI: 10.1021/nl101527e  1
2010 Mayer M, Martin P, Lyding J, Rockett AA. Scanning tunneling microscopy as a probe of defects iN CuInSe2 Conference Record of the Ieee Photovoltaic Specialists Conference. 233-238. DOI: 10.1109/PVSC.2010.5614487  1
2010 Mayer MA, Ruppalt LB, Hebert D, Lyding J, Rockett AA. Scanning tunneling microscopic analysis of Cu (In,Ga) Se2 epitaxial layers Journal of Applied Physics. 107. DOI: 10.1063/1.3304919  1
2010 Ashtekar S, Scott G, Lyding J, Gruebele M. Direct visualization of two-state dynamics on metallic glass surfaces well below T g Journal of Physical Chemistry Letters. 1: 1941-1945. DOI: 10.1021/jz100633d  1
2010 Randall JN, Ballard JB, Lyding JW, Schmucker S, Von Ehr JR, Saini R, Xu H, Ding Y. Atomic precision patterning on Si: An opportunity for a digitized process Microelectronic Engineering. 87: 955-958. DOI: 10.1016/j.mee.2009.11.143  1
2009 Lyding JW. Carbon nanotubes: A simple approach to superlattices. Nature Nanotechnology. 4: 545-6. PMID 19734921 DOI: 10.1038/nnano.2009.211  1
2009 Ritter KA, Lyding JW. The influence of edge structure on the electronic properties of graphene quantum dots and nanoribbons. Nature Materials. 8: 235-42. PMID 19219032 DOI: 10.1038/nmat2378  1
2009 Randall JN, Lyding JW, Schmucker S, Von Ehr JR, Ballard J, Saini R, Xu H, Ding Y. Atomic precision lithography on Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2764-2768. DOI: 10.1116/1.3237096  1
2009 Wood JD, Nazareth V, Lyding JW. Theoretical predictions for carbon nanotube alignment by meniscus action 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378126  1
2009 Barraza-Lopez S, Albrecht PM, Lyding JW. Carbon nanotubes on partially depassivated n -doped Si (100) - (2×1): H substrates Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/PhysRevB.80.045415  1
2009 Wood JD, Lyding JW. Carbon nanotube alignment using meniscus action 2009 9th Ieee Conference On Nanotechnology, Ieee Nano 2009. 475-476.  1
2009 Ye W, Martin P, Kumar N, Zhang F, Rockett A, Abelson J, Girolami G, Lyding J. Direct writing of sub-5 nm metals on carbon nanotubes and graphene using a UHV-STM 2009 9th Ieee Conference On Nanotechnology, Ieee Nano 2009. 825-826.  1
2009 Choi H, Huang M, Ballard JB, He KT, Schmucker SW, Lyding JW, Randall JN, Cho K. Theoretical and experimental study of tip electronic structures in scanning tunneling microscope Materials Research Society Symposium Proceedings. 1177: 19-24.  1
2008 Ritter KA, Lyding JW. Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunneling microscopy. Nanotechnology. 19: 015704. PMID 21730545 DOI: 10.1088/0957-4484/19/01/015704  1
2007 Albrecht PM, Barraza-Lopez S, Lyding JW. Preferential orientation of a chiral semiconducting carbon nanotube on the locally depassivated Si(100)-2 x 1:H surface identified by scanning tunneling microscopy. Small (Weinheim An Der Bergstrasse, Germany). 3: 1402-6. PMID 17583550 DOI: 10.1002/smll.200700070  1
2007 Albrecht PM, Lyding JW. Lateral manipulation of single-walled carbon nanotubes on H-passivated Si(100) surfaces with an ultrahigh-vacuum scanning tunneling microscope. Small (Weinheim An Der Bergstrasse, Germany). 3: 146-52. PMID 17294486 DOI: 10.1002/smll.200600326  1
2007 Ruppalt LB, Lyding JW. Metal-induced gap states at a carbon-nanotube intramolecular heterojunction observed by scanning tunneling microscopy. Small (Weinheim An Der Bergstrasse, Germany). 3: 280-4. PMID 17191289 DOI: 10.1002/smll.200600343  1
2007 Albrecht PM, Barraza-Lopez S, Lyding JW. Scanning tunnelling spectroscopy and ab initio calculations of single-walled carbon nanotubes interfaced with highly doped hydrogen-passivated Si(100) substrates Nanotechnology. 18. DOI: 10.1088/0957-4484/18/9/095204  1
2007 Ruppalt LB, Lyding JW. Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunnelling spectroscopy Nanotechnology. 18. DOI: 10.1088/0957-4484/18/21/215202  1
2007 Albrecht PM, Lyding JW. Local stabilization of single-walled carbon nanotubes on Si(100)-2 × 1:H via nanoscale hydrogen desorption with an ultrahigh vacuum scanning tunnelling microscope Nanotechnology. 18. DOI: 10.1088/0957-4484/18/12/125302  1
2007 Carmichael ES, Ballard JB, Lyding JW, Gruebele M. Frequency-modulated, single-molecule absorption detected by scanning tunneling microscopy Journal of Physical Chemistry C. 111: 3314-3321. DOI: 10.1021/jp067237n  1
2007 Gruebele M, Lyding J, Carmichael E, Ballard J. Detecting single-molecule absorption Materials Today. 10: 48-49. DOI: 10.1016/S1369-7021(07)70132-3  1
2007 Albrecht PM, Ruppalt LB, Lyding JW. UHV-STM nanofabrication on silicon Scanning Probe Microscopy. 2: 880-905. DOI: 10.1007/978-0-387-28668-6_33  1
2006 Ballard JB, Carmichael ES, Shi D, Lyding JW, Gruebele M. Laser absorption scanning tunneling microscopy of carbon nanotubes. Nano Letters. 6: 45-9. PMID 16402785 DOI: 10.1021/nl0519231  1
2006 Ruppalt LB, Albrecht PM, Lyding JW. UHV-STM study of single-walled carbon nanotubes applied to the GaAs(110) and InAs(110) surfaces Journal De Physique. Iv : Jp. 132: 31-34. DOI: 10.1051/jp4:2006132007  1
2005 Albrecht PM, Lyding JW. Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM 2005 Ieee Workshop On Microelectronics and Electron Devices, Wmed. 2005: 49-52. DOI: 10.1109/WMED.2005.1431615  1
2005 Lyding JW, Lee J, Cheng K, Albrecht PM, Ruppalt LB, Hess K. Deuterium passivation in CMOS technology Proceedings - Electrochemical Society. 135-143.  1
2004 Ruppalt LB, Albrecht PM, Lyding JW. Atomic resolution scanning tunneling microscope study of single-walled carbon nanotubes on GaAs(110) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2005-2007. DOI: 10.1116/1.1768192  1
2004 Lee JS, Lyding JW, Hess K. Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress Annual Proceedings - Reliability Physics (Symposium). 685-686. DOI: 10.1109/RELPHY.2004.1315451  1
2004 Yu J, Liu L, Lyding JW. A scanning tunneling microscopy study: Si/SiO2: Interface roughness induced by chemical etching Materials Research Society Symposium Proceedings. 838: 44-49.  1
2004 Ruppalt LB, Albrecht PM, Lyding JW. Deposition and STM investigation of single-walled carbon nanotubes on GaAs(110) 2004 4th Ieee Conference On Nanotechnology. 13-15.  1
2004 Ballard J, Shi D, Carmichael E, Pappu S, Lyding J, Gruebele M. Scanning tunneling microscopy using dynamic laser heating 2004 4th Ieee Conference On Nanotechnology. 68-70.  1
2004 Liu FY, Griffin PB, Plummer JD, Lyding JW, Moran JM, Richards JF, Kulig L. Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 422-426.  1
2003 Albrecht PM, Farrell RM, Ye W, Lyding JW. Direct integration of single-walled carbon nanotubes with silicon Proceedings of the Ieee Conference On Nanotechnology. 1: 327-330. DOI: 10.1109/NANO.2003.1231784  1
2003 Cheng K, Lyding JW. An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps Ieee Electron Device Letters. 24: 655-657. DOI: 10.1109/LED.2003.817377  1
2003 Cheng K, Lyding JW. Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect Ieee Electron Device Letters. 24: 487-489. DOI: 10.1109/LED.2003.815003  1
2003 Albrecht PM, Lyding JW. Ultrahigh-vacuum scanning tunneling microscopy and spectroscopy of single-walled carbon nanotubes on hydrogen-passivated Si(100) surfaces Applied Physics Letters. 83: 5029-5031. DOI: 10.1063/1.1633014  1
2003 Albrecht PM, Lyding JW. Atomic-scale characterization of single-walled carbon nanotubes on Si(100)-2 × 1:H with the ultrahigh vacuum scanning tunneling microscope Superlattices and Microstructures. 34: 407-412. DOI: 10.1016/j.spmi.2004.03.037  1
2002 Liu L, Yu J, Lyding JW. Subsurface dopant-induced features on the Si(100)2 × 1:H surface: Fundamental study and applications Ieee Transactions On Nanotechnology. 1: 176-183. DOI: 10.1109/TNANO.2002.807391  1
2002 Cheng K, Lee J, Hess K, Lyding JW, Kim YK, Kim YW, Suh KP. Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces Ieee Transactions On Electron Devices. 49: 529-531. DOI: 10.1109/16.987128  1
2002 Hersam MC, Guisinger NP, Lee J, Cheng K, Lyding JW. Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D Applied Physics Letters. 80: 201-203. DOI: 10.1063/1.1431689  1
2002 Yang J, Thornton TJ, Goodnick SM, Kozicki M, Lyding J. Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy Physica B: Condensed Matter. 314: 354-357. DOI: 10.1016/S0921-4526(01)01404-1  1
2002 Liu L, Yu J, Viernes NOL, Moore JS, Lyding JW. Adsorption of cobalt phthalocyanine on Si(1 0 0)2 × 1 and Si(1 0 0)2 × 1:H surfaces studied by scanning tunneling microscopy and spectroscopy Surface Science. 516: 118-126. DOI: 10.1016/S0039-6028(02)01958-1  1
2002 McMahon W, Matsuda K, Lee J, Hess K, Lyding J. The effects of a multiple carrier model of interface trap generation on lifetime extraction for MOSFETs 2002 International Conference On Modeling and Simulation of Microsystems - Msm 2002. 576-579.  1
2002 Liu L, Yu J, Lyding JW. Scanning tunneling microscopy observation of single dangling bonds on the Si(100)2×1:H surface Materials Research Society Symposium - Proceedings. 705: 187-192.  1
2002 Liu L, Yu J, Lyding JW. Depth dependence of dopant induced features on the Si(100)2×1:H surface and its application for three dimensional dopant profiling Materials Research Society Symposium - Proceedings. 699: 207-211.  1
2001 Cheng K, Lee J, Chen Z, Shah SA, Hess K, Leburton JP, Lyding JW. Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1119-1123. DOI: 10.1116/1.1385687  1
2001 Haggag A, McMahon W, Hess K, Cheng K, Lee J, Lyding J. High-performance chip reliability from short-time-tests-statistical models for optical interconnect and HCI/TDDB/NBTI deep-submicron transistor failures Ieee International Reliability Physics Symposium Proceedings. 2001: 271-279. DOI: 10.1109/RELPHY.2001.922913  1
2001 Cheng K, Hess K, Lyding JW. Deuterium passivation of interface traps in MOS devices Ieee Electron Device Letters. 22: 441-443. DOI: 10.1109/55.944333  1
2001 Cheng K, Hess K, Lyding JW. A new technique to quantify deuterium passivation of interface traps in MOS devices Ieee Electron Device Letters. 22: 203-205. DOI: 10.1109/55.919229  1
2001 Cheng K, Lee J, Lyding JW, Kim YK, Kim YW, Suh KP. Separation of hot-carrier-induced interface trap creation and oxide charge trapping in PMOSFETs studied by hydrogen/deuterium isotope effect Ieee Electron Device Letters. 22: 188-190. DOI: 10.1109/55.915609  1
2001 Chen Z, Cheng K, Lee J, Lyding JW, Hess K, Chetlur S. Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study Ieee Transactions On Electron Devices. 48: 813-815. DOI: 10.1109/16.915732  1
2001 Hess K, Haggag A, McMahon W, Cheng K, Lee J, Lyding J. The physics of determining chip reliability Ieee Circuits and Devices Magazine. 17: 33-38. DOI: 10.1109/101.933789  1
2001 Cheng K, Hess K, Lyding JW. Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces Journal of Applied Physics. 90: 6536-6538. DOI: 10.1063/1.1412265  1
2001 Cheng K, Leburton JP, Hess K, Lyding JW. On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 79: 863-865. DOI: 10.1063/1.1389318  1
2001 Cheng K, Lee J, Hess K, Lyding JW. Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect Applied Physics Letters. 78: 1882-1884. DOI: 10.1063/1.1359143  1
2001 Hersam MC, Guisinger NP, Lyding JW, Thompson DS, Moore JS. Atomic-level study of the robustness of the Si(100)-2X1:H surface following exposure to ambient conditions Applied Physics Letters. 78: 886-888. DOI: 10.1063/1.1348322  1
2001 Liu L, Yu J, Lyding JW. Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy Applied Physics Letters. 78: 386-388. DOI: 10.1063/1.1339260  1
2001 Cheng K, Lee J, Chen Z, Shah S, Hess K, Lyding JW, Kim YK, Kim YW, Suh KP. Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices Microelectronic Engineering. 56: 353-358. DOI: 10.1016/S0167-9317(01)00572-X  1
2001 Haggag A, McMahon W, Hess K, Cheng K, Lee J, Lyding J. High-performance chip reliability from short-time-tests Statistical models for optical interconnect and HCl/TDDB/NBTI deep-submicron transistor failures Annual Proceedings - Reliability Physics (Symposium). 271-279.  1
2000 Hersam MC, Guisinger NP, Lyding JW. Isolating, imaging, and electrically characterizing individual organic molecules on the Si(100) surface with the scanning tunneling microscope Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 1349-1353. DOI: 10.1116/1.582352  1
2000 Jinju L, Cheng K, Chen Z, Hess K, Lyding JW, Young-Kwang K, Seung L, Young-Wug K, Kwang-Pyuk S. Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors Ieee Electron Device Letters. 21: 221-223. DOI: 10.1109/55.841302  1
2000 Chen Z, Hess K, Lee J, Lyding JW, Rosenbaum E, Kizilyalli I, Chetlur S, Huang R. On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing Ieee Electron Device Letters. 21: 24-26. DOI: 10.1109/55.817441  1
2000 Hersam MC, Guisinger NP, Lyding JW. Silicon-based molecular nanotechnology Nanotechnology. 11: 70-76. DOI: 10.1088/0957-4484/11/2/306  1
2000 Hersam MC, Lee J, Guisinger NP, Lyding JW. Implications of atomic-level manipulation on the Si(100) surface: From enhanced CMOS reliability to molecular nanoelectronics Superlattices and Microstructures. 27: 583-591. DOI: 10.1006/spmi.2000.0854  1
2000 Hess K, Haggag A, McMahon W, Fischer B, Cheng K, Lee J, Lyding J. Simulation of Si-SiO2 defect generation in CMOS chips: From atomistic structure to chip failure rates Technical Digest - International Electron Devices Meeting. 93-95.  1
2000 Lee J, Cheng K, Lyding JW, Salemink HWM. Isotope exchange in hydrogenated silicon-oxynitride (SiON) for 1.55μm optical waveguide applications Materials Research Society Symposium - Proceedings. 609: A2681-A2686.  1
2000 Haggag A, McMahon W, Hess K, Cheng K, Lee J, Lyding J. Probabilistic-physics-of-failure/short-time-test approach to reliability assurance for high-performance chips: Models for deep-submicron transistors and optical interconnects International Integrated Reliability Workshop Final Report. 179-182.  1
2000 Cheng K, Lee J, Lyding JW. Experimental evidence of Si-H bond energy variation at SiO2-Si interface Applied Physics Letters. 77: 3388-3390.  1
2000 Cheng K, Lee J, Lyding JW. Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices Applied Physics Letters. 77: 2358-2360.  1
2000 Foley ET, Kam AF, Lyding JW. Cryogenic variable temperature ultrahigh vacuum scanning tunneling microscope Review of Scientific Instruments. 71: 3428-3435.  1
1999 Hess K, Lee J, Chen Z, Lyding JW, Kim YK, Kim BS, Lee YH, Kim YW, Suh KP. An alternative interpretation of hot electron interface degradation in NMOSFET's: Isotope results irreconcilable with major defect generation by holes? Ieee Transactions On Electron Devices. 46: 1914-1916. DOI: 10.1109/16.784195  1
1999 Lee J, Epstein Y, Berti AC, Huber J, Hess K, Lyding JW. The effect of deuterium passivation at different steps of cmos processing on lifetime improvements of cmos transistors Ieee Transactions On Electron Devices. 46: 1812-1813. DOI: 10.1109/16.777177  1
1999 Hess K, Register LF, McMahon W, Tuttle B, Aktas O, Ravaioli U, Lyding JW, Kizilyalli IC. Theory of channel hot-carrier degradation in MOSFETs Physica B: Condensed Matter. 272: 527-531. DOI: 10.1016/S0921-4526(99)00363-4  1
1999 Hersam MC, Abeln GC, Lyding JW. Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100) Microelectronic Engineering. 47: 235-237. DOI: 10.1016/S0167-9317(99)00203-8  1
1999 Tao M, Lyding JW. Direct observation of strained substrate in graded Si1-xGex/Si heterostructures Applied Physics Letters. 74: 2020-2022.  1
1998 Kizilyalli IC, Abeln G, Chen Z, Weber G, Register F, Harris E, Chetlur S, Higashi G, Schofieled M, Sen S, Kotzias B, Roy PK, Lyding J, Hess K. Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability Proceedings of Spie - the International Society For Optical Engineering. 3506: 141-146. DOI: 10.1117/12.323960  1
1998 Lee J, Aur S, Eklund R, Hess K, Lyding JW. Secondary ion mass spectroscopy characterization of the deuterium sintering process for enhanced-lifetime complementary metal-oxide-semiconductor transistors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1762-1766. DOI: 10.1116/1.581298  1
1998 Kizilyalli IC, Abeln GC, Chen Z, Lee J, Weber G, Kotzias B, Chetlur S, Lyding JW, Hess K. Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems Ieee Electron Device Letters. 19: 444-446. DOI: 10.1109/55.728907  1
1998 Hess K, Kizilyalli IC, Lyding JW. Giant isotope effect in hot electron degradation of metal oxide silicon devices Ieee Transactions On Electron Devices. 45: 406-416. DOI: 10.1109/16.658674  1
1998 Lyding JW, Hess K, Abeln GC, Thompson DS, Moore JS, Hersam MC, Foley ET, Lee J, Chen Z, Hwang ST, Choi H, Avouris P, Kizilyalli IC. Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: Implications for complementary metal oxide semiconductor technology Applied Surface Science. 130: 221-230. DOI: 10.1016/S0169-4332(98)00054-3  1
1998 Foley ET, Kam AF, Lyding JW, Avouris P. Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100) Physical Review Letters. 80: 1336-1339.  1
1998 Abeln GC, Hersam MC, Thompson DS, Hwang ST, Choi H, Moore JS, Lyding JW. Approaches to nanofabrication on Si(100) surfaces: Selective area chemical vapor deposition of metals and selective chemisorption of organic molecules Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3874-3878.  1
1998 Hess K, Register LF, Tuttle B, Lyding J, Kizilyalli IC. Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime Physica E: Low-Dimensional Systems and Nanostructures. 3: 1-7.  1
1997 Kizilyalli IC, Lyding JW, Hess K. Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability Ieee Electron Device Letters. 18: 81-83. DOI: 10.1109/55.556087  1
1997 Lyding JW. UHV STM nanofabrication: Progress, technology spin-offs, and challenges Proceedings of the Ieee. 85: 589-600. DOI: 10.1109/5.573743  1
1997 Abeln GC, Lee SY, Lyding JW, Thompson DS, Moore JS. Nanopatterning organic monolayers on Si(100) by selective chemisorption of norbornadiene Applied Physics Letters. 70: 2747-2749.  1
1996 Potter C, Brady R, Moran P, Gregory C, Carragher B, Kisseberth N, Lyding J, Lindquist J. EVAC: A virtual environment for control of remote imaging instrumentation Ieee Computer Graphics and Applications. 16: 62-66. DOI: 10.1109/38.511856  1
1996 Lyding JW, Shen TC, Abeln GC, Wang C, Tucker JR. Nanoscale patterning and selective chemistry of silicon surfaces by ultrahigh-vacuum scanning tunneling microscopy Nanotechnology. 7: 128-133. DOI: 10.1088/0957-4484/7/2/006  1
1996 Lyding JW, Hess K, Kizilyalli IC. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing Applied Physics Letters. 68: 2526-2528. DOI: 10.1063/1.116172  1
1996 Sengupta DK, Malin JL, Jackson SI, Fang W, Wu W, Kuo HC, Rowe C, Chuang SL, Hsieh KC, Tucker JR, Lyding JW, Feng M, Stillman GE, Liu HC. Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors Materials Research Society Symposium - Proceedings. 421: 203-208.  1
1996 Lyding JW, Shen TC, Abeln GC, Wang C, Scott PA, Tucker JR, Avouris P, Walkup RE. Ultrahigh vacuum scanning tunneling microscope-based nanolithography and selective chemistry on silicon surfaces Israel Journal of Chemistry. 36: 3-10.  1
1996 Avouris P, Walkup RE, Rossi AR, Akpati HC, Nordlander P, Shen TC, Abeln GC, Lyding JW. Breaking individual chemical bonds via STM-induced excitations Surface Science. 363: 368-377.  1
1996 Avouris P, Walkup RE, Rossi AR, Shen TC, Abeln GC, Tucker JR, Lyding JW. STM-induced H atom desorption from Si(100): Isotope effects and site selectivity Chemical Physics Letters. 257: 148-154.  1
1996 Kizilyalli IC, Lyding JW, Hess K. Deuterium post metal annealing of MOSFETs for improved hot carrier reliability Annual Device Research Conference Digest. 14-15.  1
1995 Skala SL, Wu W, Tucker JR, Lyding JW, Seabaugh A, Beam EA, Jovanovic D. Interface characterization in an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 660-663. DOI: 10.1116/1.587935  1
1995 Wu W, Skala SL, Tucker JR, Lyding JW, Seabaugh A, Beam EA, Jovanovic D. Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 602-606. DOI: 10.1116/1.579793  1
1995 Shen TC, Wang C, Lyding JW, Tucker JR. Nanoscale oxide patterns on Si(100) surfaces Applied Physics Letters. 976. DOI: 10.1063/1.113817  1
1995 Abeln GC, Shen TC, Tucker JR, Lyding JW. Nanoscale STM-patterning and chemical modification of the Si(100) surface Microelectronic Engineering. 27: 23-26. DOI: 10.1016/0167-9317(94)00047-X  1
1995 Reuter EE, Gu SQ, Bohn PW, Dorsten JF, Abeln GC, Lyding JW, Bishop SG. Effects of gallium arsenide passivation on scanning tunneling microscope excited luminescence Materials Research Society Symposium - Proceedings. 380: 119-124.  1
1995 Lyding JW, Shen TC, Abeln GC, Wang C, Foley ET, Tucker JR. Silicon nanofabrication and chemical modification by UHV-STM Materials Research Society Symposium - Proceedings. 380: 187-197.  1
1995 Shen TC, Wang C, Abeln GC, Tucker JR, Lyding JW, Avouris P, Walkup RE. Atomic-scale desorption through electronic and vibrational excitation mechanisms Science. 268: 1590-1592.  1
1994 Shen TC, Wang C, Lyding JW, Tucker JR. STM study of surface reconstructions of Si(111):B Physical Review B. 50: 7453-7460. DOI: 10.1103/PhysRevB.50.7453  1
1994 Fay P, Brockenbrough RT, Abeln G, Scott P, Agarwala S, Adesida I, Lyding JW. Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces Journal of Applied Physics. 75: 7545-7549. DOI: 10.1063/1.356629  1
1994 Tessmer SH, Harlingen DJV, Lyding JW. Integrated cryogenic scanning tunneling microscopy and sample preparation system Review of Scientific Instruments. 65: 2855-2859. DOI: 10.1063/1.1144628  1
1994 Skala SL, Chou ST, Cheng KY, Tucker JR, Lyding JW. Scanning tunneling microscopy of step bunching on vicinal GaAs(100) annealed at high temperatures Applied Physics Letters. 65: 722-724. DOI: 10.1063/1.112236  1
1994 Lyding JW, Shen TC, Hubacek JS, Tucker JR, Abeln GC. Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope Applied Physics Letters. 64: 2010-2012. DOI: 10.1063/1.111722  1
1993 Tessmer SH, Van Harlingen DJ, Lyding JW. Observation of bound quasiparticle states in thin Au islands by scanning tunneling microscopy. Physical Review Letters. 70: 3135-3138. PMID 10053784 DOI: 10.1103/PhysRevLett.70.3135  1
1993 Skala SL, Hubacek JS, Tucker JR, Lyding JW, Chou ST, Cheng K. Structure of GaAs(100)-c(8 x 2) determined by scanning tunneling microscopy. Physical Review. B, Condensed Matter. 48: 9138-9141. PMID 10007140  1
1993 Skala SL, Hubacek JS, Tucker JR, Lyding JW, Chou ST, Cheng KY. Structure of GaAs(100)-c(8×2) determined by scanning tunneling microscopy Physical Review B. 48: 9138-9141. DOI: 10.1103/PhysRevB.48.9138  1
1993 Brockenbrough RT, Lyding JW. Inertial tip translator for a scanning tunneling microscope Review of Scientific Instruments. 64: 2225-2228. DOI: 10.1063/1.1143965  1
1989 Gammie G, Hubacek JS, Skala SL, Brockenbrough RT, Tucker JR, Lyding JW. Scanning tunneling microscopy of NbSe3 and orthorhombic TaS3 Physical Review B. 40: 9529-9532. DOI: 10.1103/PhysRevB.40.9529  1
1989 Gammie G, Hubacek JS, Skala SL, Brockenbrough RT, Tucker JR, Lyding JW. Scanning tunneling microscopy of the charge-density wave in orthorhombic TaS3 Physical Review B. 40: 11965-11968. DOI: 10.1103/PhysRevB.40.11965  1
1988 Lyding JW, Hubacek JS, Gammie G, Skala S, Brockenbrough R, Shapley JR, Keyes MP. Scanning tunneling microscopy of graphite adsorbed metal species and sliding charge-density wave systems Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 363-367. DOI: 10.1116/1.575415  0.44
1988 Lyding JW, Marks TJ, Marcy HO, Kannewurf CR. Computer Automated Charge Transport Measurement System Ieee Transactions On Instrumentation and Measurement. 37: 76-80. DOI: 10.1109/19.2668  1
1988 Thorne RE, Hubacek JS, Lyons WG, Lyding JW, Tucker JR. Ac-dc interference, complete mode locking, and origin of coherent oscillations in sliding charge-density-wave systems Physical Review B. 37: 10055-10067. DOI: 10.1103/PhysRevB.37.10055  1
1988 Lyding JW, Skala S, Hubacek JS, Brockenbrough R, Gammie G. Variable-temperature scanning tunneling microscope Review of Scientific Instruments. 59: 1897-1902. DOI: 10.1063/1.1140047  1
1988 Barbara TM, Gammie G, Lyding JW, Jonas J. Single-crystal conductivity measurements of hydrogen molybdenum bronzes: HxMoO3 Journal of Solid State Chemistry. 75: 183-187. DOI: 10.1016/0022-4596(88)90315-5  1
1988 Zhou X, Lyding JW, Marks TJ, Carr SH. Electrical conductivity of iodine doped poly(phthalocyaninatosiloxane)/PPTA blend fibers Chinese Journal of Polymer Science (English Edition). 6: 208-215.  1
1987 Thorne RE, Lyons WG, Lyding JW, Tucker JR, Bardeen J. Charge-density-wave transport in quasi-one-dimensional conductors. II. ac-dc interference phenomena Physical Review B. 35: 6360-6372. DOI: 10.1103/PhysRevB.35.6360  1
1987 Thorne RE, Lyons WG, Lyding JW, Tucker JR, Bardeen J. Charge-density-wave transport in quasi-one-dimensional conductors. I. Current oscillations Physical Review B. 35: 6348-6359. DOI: 10.1103/PhysRevB.35.6348  1
1987 Bardeen J, Lyding JW, Lyons WG, Miller JH, Thorne RE, Tucker JR. Development of a tunnelling model of charge-density-wve depinning Synthetic Metals. 19: 1-6. DOI: 10.1016/0379-6779(87)90322-5  1
1986 Inabe T, Gaudiello JG, Moguel MK, Lyding JW, Burton RL, McCarthy WJ, Kannewurf CR, Marks TJ. Cofacial assembly of partially oxidized metallomacrocycles as an approach to controlling lattice architecture in low-dimensional molecular "metals". Probing band structure-counterion interactions in conductive [M(phthalocyaninato)O]n macromolecules using nitrosonium oxidants. Journal of the American Chemical Society. 108: 7595-608. PMID 22283263 DOI: 10.1021/ja00284a025  1
1986 Tucker JR, Lyons WG, Miller JH, Thorne RE, Lyding JW. Origin of the dielectric relaxation frequency in sliding-charge-density- wave systems Physical Review B. 34: 9038-9041. DOI: 10.1103/PhysRevB.34.9038  1
1986 Thorne RE, Lyons WG, Miller JH, Lyding JW, Tucker JR. Current oscillations in charge-density-wave transport Physical Review B. 34: 5988-5991. DOI: 10.1103/PhysRevB.34.5988  1
1986 Lyding JW, Hubacek JS, Gammie G, Thorne RE. Evidence for bulk "narrow-band noise" in NbSe3: Thermal-gradient studies Physical Review B. 33: 4341-4344. DOI: 10.1103/PhysRevB.33.4341  1
1986 Inabe T, Liang WB, Lomax JF, Nakamura S, Lyding JW, McCarthy WJ, Carr SH, Kannewurf CR, Marks TJ. Phthalocyanine-based electrically conductive, processible molecular/macromolecular hybrid materials Synthetic Metals. 13: 219-229. DOI: 10.1016/0379-6779(86)90072-X  1
1986 Bolinger CM, Darkwa J, Gammie G, Gammon SD, Lyding JW, Rauchfuss TB, Wilson SR. Synthesis, structure, and electrical properties of [(MeCp)5V5S6][(TCNQ)2] Organometallics. 5: 2386-2388.  1
1985 Thorne RE, Miller JH, Lyons WG, Lyding JW, Tucker JR. Macroscopic quantum tunneling in quasi one-dimensional metals. I. Experiment Physical Review Letters. 55: 1006-1009. DOI: 10.1103/PhysRevLett.55.1006  1
1985 Inabe T, Marks TJ, Burton RL, Lyding JW, McCarthy WJ, Kannewurf CR, Reisner GM, Herbstein FH. Highly conductive metallophthalocyanine assemblies. Structure, charge transport, and anisotropy in the metal-free molecular metal H2(Pc)I Solid State Communications. 54: 501-504. DOI: 10.1016/0038-1098(85)90656-8  1
1984 Inabe T, Lomax JF, Lyding JW, Kannewurf CR, Marks TJ. Electrically conductive, processable polymeric materials constructed from metallophthalocyanines Synthetic Metals. 9: 303-316. DOI: 10.1016/0379-6779(84)90068-7  1
1984 Inabe T, Lomax JF, Marks TJ, Lyding JW, Kannewurf CR, Wynne KJ. Processable, oriented, electrically conductive hybrid molecular/macromolecular materials Macromolecules. 17: 260-262.  1
1984 Diel BN, Inabe T, Jaggi NK, Lyding JW, Schneider O, Hanack M, Kannewurf CR, Marks TJ, Schwartz LH. Cofacial assembly of metallomacrocycles as an approach to controlling lattice architecture in low-dimensional molecular solids. Chemical, structural, oxidation-state, transport, and optical properties of the coordination polymer [Fe(phthalocyaninato)(μ-pyrazine)]n and the consequences of halogen doping Journal of the American Chemical Society. 106: 3207-3214.  1
1983 Inabe T, Lyding JW, Marks TJ. Spinning fibres and fibre blends of an electrically conductive polymer Journal of the Chemical Society, Chemical Communications. 1084-1085.  1
1983 Diel BN, Inabe T, Lyding JW, Schoch KF, Kannewurf CR, Marks TJ. Cofacial assembly of partially oxidized metallomacrocycles as an approach to controlling lattice architecture in low-dimensional molecular solids. Chemical, structural, oxidation state, transport, magnetic, and optical properties of halogen-doped [M(phthalocyaninato)O]n macromolecules, where M = Si, Ge, and Sn Journal of the American Chemical Society. 105: 1551-1567.  1
1982 Lyding JW, Ratajack MT, Kannewurf CR, Goodman WH, Ibers JA, Marsh RE. Structure, electrical transport, and optical properties of a new ordered iron intercalated dichalcogenide, Fe0.34TiSe2 Journal of Physics and Chemistry of Solids. 43: 599-607. DOI: 10.1016/0022-3697(82)90049-X  1
1982 Diel BN, Inabe T, Lyding JW, Schoch KF, Kannewurf CR, Marks TJ. COFACIALLY LINKED METALLOMACROCYCLIC CONDUCTIVE POLYMERS. HALOGEN DOPANT LEVEL AND MACROMOLECULE ARCHITECTURE, ELECTRONIC STRUCTURE, AND CHARGE TRANSPORT American Chemical Society, Polymer Preprints, Division of Polymer Chemistry. 23: 124-125.  1
1980 Lin LS, Marks TJ, Kannewurf CR, Lyding JW, Mcclure MS, Ratajack MT, Whang TC. New class of electrically conductive metallomacrocycles: Iodine-doped dihydrodibenzo[b,i][1,4,8,11]tetra-azacyclotetradecine complexes Journal of the Chemical Society, Chemical Communications. 954-955.  1
1980 Kalina DW, Lyding JW, Ratajack MT, Kannewurf CR, Marks TJ. Bromine as a partial oxidant. Oxidation state and charge transport in brominated nickel and palladium bis(diphenylglyoximates). A comparison with the iodinated materials and resonance Raman structure-spectra correlation for polybromides Journal of the American Chemical Society. 102: 7854-7862.  1
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