Year |
Citation |
Score |
2013 |
Denault KA, Mikhailovsky AA, Brinkley S, Denbaars SP, Seshadri R. Improving color rendition in solid state white lighting through the use of quantum dots Journal of Materials Chemistry C. 1: 1461-1466. DOI: 10.1039/C2Tc00420H |
0.684 |
|
2012 |
Brinkley SE, Keraly CL, Sonoda J, Weisbuch C, Speck JS, Nakamura S, DenBaars SP. Chip shaping for light extraction enhancement of bulk C-plane light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.032104 |
0.719 |
|
2012 |
Denault KA, George NC, Paden SR, Brinkley S, Mikhailovsky AA, Neuefeind J, Denbaars SP, Seshadri R. A green-yellow emitting oxyfluoride solid solution phosphor Sr 2Ba(AlO 4F) 1-x(SiO 5) x:Ce 3+ for thermally stable, high color rendition solid state white lighting Journal of Materials Chemistry. 22: 18204-18213. DOI: 10.1039/C2Jm33620K |
0.664 |
|
2012 |
Matioli E, Brinkley S, Kelchner KM, Hu YL, Nakamura S, DenBaars S, Speck J, Weisbuch C. High-brightness polarized light-emitting diodes Light: Science and Applications. 1. DOI: 10.1038/Lsa.2012.22 |
0.792 |
|
2011 |
Im WB, George N, Kurzman J, Brinkley S, Mikhailovsky A, Hu J, Chmelka BF, DenBaars SP, Seshadri R. Efficient and color-tunable oxyfluoride solid solution phosphors for solid-state white lighting. Advanced Materials (Deerfield Beach, Fla.). 23: 2300-5. PMID 21480397 DOI: 10.1002/Adma.201003640 |
0.685 |
|
2011 |
Brinkley SE, Pfaff N, Denault KA, Zhang Z, Hintzen HT, Seshadri R, Nakamura S, Denbaars SP. Robust thermal performance of Sr 2Si 5N 8:Eu 2+: An efficient red emitting phosphor for light emitting diode based white lighting Applied Physics Letters. 99. DOI: 10.1063/1.3666785 |
0.797 |
|
2011 |
Matioli E, Brinkley S, Kelchner KM, Nakamura S, Denbaars S, Speck J, Weisbuch C. Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals Applied Physics Letters. 98. DOI: 10.1063/1.3602319 |
0.787 |
|
2011 |
Brinkley SE, Lin YD, Chakraborty A, Pfaff N, Cohen D, Speck JS, Nakamura S, Denbaars SP. Polarized spontaneous emission from blue-green m -plane GaN-based light emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3541655 |
0.799 |
|
2010 |
Koslow IL, Sonoda J, Chung RB, Pan CC, Brinkley S, Ohta H, Nakamura S, DenBaars SP. High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.080203 |
0.798 |
|
2010 |
Zhao Y, Sonoda J, Pan CC, Brinkley S, Koslow I, Fujito K, Ohta H, DenBaars SP, Nakamura S. 30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique Applied Physics Express. 3. DOI: 10.1143/Apex.3.102101 |
0.789 |
|
2010 |
Masui H, Kamber DS, Brinkley SE, Wu F, Baker TJ, Zhong H, Iza M, Speck JS, Nakamura S, Denbaars SP. Spontaneous formation of {1 1̄ 0 1} InGaN quantum wells on a (1 1 2̄ 2) GaN template and their electroluminescence characteristics Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015003 |
0.748 |
|
2010 |
Im WB, Brinkley S, Hu J, Mikhailovsky A, Denbaars SP, Seshadri R. Sr2.975-xBaxCe0.025AlO4F: A highly efficient green-emitting oxyfluoride phosphor for solid state white lighting Chemistry of Materials. 22: 2842-2849. DOI: 10.1021/Cm100010Z |
0.639 |
|
2009 |
Im WB, Fourré Y, Brinkley S, Sonoda J, Nakamura S, DenBaars SP, Seshadri R. Substitution of oxygen by fluorine in the GdSr2AlO5:Ce3+ phosphors: Gd1-xSr2+xAlO5-xFx solid solutions for solid state white lighting. Optics Express. 17: 22673-9. PMID 20052193 DOI: 10.1364/Oe.17.022673 |
0.603 |
|
2009 |
Lin YD, Chakraborty A, Brinkley S, Kuo HC, Melo T, Fujito K, Speck JS, Denbaars SP, Nakamura S. Characterization of blue-green m -plane InGaN light emitting diodes Applied Physics Letters. 94. DOI: 10.1063/1.3167824 |
0.634 |
|
2009 |
Vampola KJ, Fellows NN, Masui H, Brinkley SE, Furukawa M, Chung RB, Sato H, Sonoda J, Hirasawa H, Iza M, Denbaars SP, Nakamura S. Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates Physica Status Solidi (a) Applications and Materials Science. 206: 200-202. DOI: 10.1002/Pssa.200880411 |
0.73 |
|
2008 |
Murai A, Thompson DB, Hirasawa H, Fellows N, Brinkley S, Won CJ, Iza M, Mishra UK, Nakamura S, Denbaars SP. Pointed cone shaped light-emitting diodes based on ZnO/GaN wafer bonding Japanese Journal of Applied Physics. 47: 3522-3523. DOI: 10.1143/Jjap.47.3522 |
0.558 |
|
2008 |
Thompson DB, Murai A, Iza M, Brinkley S, Steven DP, Mishra UK, Nakamura S. Hexagonal truncated pyramidal light emitting diodes through wafer bonding of znO to gan, laser lift-off, and photo chemical etching Japanese Journal of Applied Physics. 47: 3447-3449. DOI: 10.1143/Jjap.47.3447 |
0.493 |
|
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