Ilan Ben-Yaacov, Ph.D. - Publications

Affiliations: 
2004 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics

7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 Gao Y, Ben-Yaacov I, Misera U, Hu E. Etched aperture GaN cavet through photoelectrochemical wet etching International Journal of High Speed Electronics and Systems. 14: 245-264. DOI: 10.1142/S0129156404002326  0.335
2004 Gao Y, Ben-Yaacov I, Mishra UK, Hu EL. Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching Journal of Applied Physics. 96: 6925-6927. DOI: 10.1063/1.1806281  0.365
2004 Ben-Yaacov I, Seck YK, Mishra UK, DenBaars SP. AlGaN/GaN current aperture vertical electron transistors with regrown channels Journal of Applied Physics. 95: 2073-2078. DOI: 10.1063/1.1641520  0.437
2003 Gao Y, Stonas AR, Ben-Yaacov I, Mishra U, DenBaars SP, Hu EL. AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching Electronics Letters. 39: 148-149. DOI: 10.1049/El:20030018  0.557
2003 Ben-Yaacov I, Seck YK, DenBaars SP, Hu EL, Mishra UK. Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) Materials Research Society Symposium - Proceedings. 764: 333-338.  0.314
2001 Keller S, Heikman S, Ben-Yaacov I, Shen L, DenBaars SP, Mishra UK. Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition Applied Physics Letters. 79: 3449-3451. DOI: 10.1063/1.1420573  0.534
2001 Keller S, Heikman S, Ben-Yaacov I, Shen L, DenBaars SP, Mishra UK. Indium Surfactant Assisted Growth of AlN/GaN Heterostructures by Metal-Organic Chemical Vapor Deposition Physica Status Solidi (a) Applied Research. 188: 775-778. DOI: 10.1002/1521-396X(200112)188:2<775::Aid-Pssa775>3.0.Co;2-S  0.528
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