Ilan Ben-Yaacov, Ph.D. - Publications
Affiliations: | 2004 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsYear | Citation | Score | |||
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2004 | Gao Y, Ben-Yaacov I, Misera U, Hu E. Etched aperture GaN cavet through photoelectrochemical wet etching International Journal of High Speed Electronics and Systems. 14: 245-264. DOI: 10.1142/S0129156404002326 | 0.335 | |||
2004 | Gao Y, Ben-Yaacov I, Mishra UK, Hu EL. Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching Journal of Applied Physics. 96: 6925-6927. DOI: 10.1063/1.1806281 | 0.365 | |||
2004 | Ben-Yaacov I, Seck YK, Mishra UK, DenBaars SP. AlGaN/GaN current aperture vertical electron transistors with regrown channels Journal of Applied Physics. 95: 2073-2078. DOI: 10.1063/1.1641520 | 0.437 | |||
2003 | Gao Y, Stonas AR, Ben-Yaacov I, Mishra U, DenBaars SP, Hu EL. AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching Electronics Letters. 39: 148-149. DOI: 10.1049/El:20030018 | 0.557 | |||
2003 | Ben-Yaacov I, Seck YK, DenBaars SP, Hu EL, Mishra UK. Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) Materials Research Society Symposium - Proceedings. 764: 333-338. | 0.314 | |||
2001 | Keller S, Heikman S, Ben-Yaacov I, Shen L, DenBaars SP, Mishra UK. Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition Applied Physics Letters. 79: 3449-3451. DOI: 10.1063/1.1420573 | 0.534 | |||
2001 | Keller S, Heikman S, Ben-Yaacov I, Shen L, DenBaars SP, Mishra UK. Indium Surfactant Assisted Growth of AlN/GaN Heterostructures by Metal-Organic Chemical Vapor Deposition Physica Status Solidi (a) Applied Research. 188: 775-778. DOI: 10.1002/1521-396X(200112)188:2<775::Aid-Pssa775>3.0.Co;2-S | 0.528 | |||
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