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Andrew M. Lam, Ph.D. - Publications

Affiliations: 
2000 Cornell University, Ithaca, NY, United States 
Area:
Chemical Engineering, Electronics and Electrical Engineering
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Kim Y, Zojaji A, Ye Z, Lam A, Dalida N, Sanchez E, Kuppurao S. Low Temperature Selective Si and Si-Based Alloy Epitaxy For Advanced Transistor Applications Mrs Proceedings. 913. DOI: 10.1557/Proc-0913-D04-05  0.514
2004 Schroeder TW, Lam AM, Ma PF, Engstrom JR. Effects of atomic hydrogen on the selective area growth of Si and Si 1-xGe x thin films on Si and SiO 2 surfaces: Inhibition, nucleation, and growth Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 578-593. DOI: 10.1116/1.1699336  0.669
2001 Schroeder TW, Ma PF, Lam AM, Zheng YJ, Engstrom JR. Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation Applied Physics Letters. 79: 2181-2183. DOI: 10.1063/1.1408271  0.658
1999 Zheng YJ, Lam AM, Engstrom JR. Modeling of Ge surface segregation in vapor-phase deposited Si1 - xGex thin films Applied Physics Letters. 75: 817-819. DOI: 10.1063/1.124523  0.689
1998 Lam AM, Zheng YJ, Engstrom JR. The effect of strain on gas-surface reactivity in group-IV heteroepitaxial systems Chemical Physics Letters. 292: 229-234. DOI: 10.1016/S0009-2614(98)00668-X  0.693
1997 Lam AM, Zheng YJ, Engstrom JR. Gas-surface reactivity in mixed-crystal systems: The reaction of GeH4 and Ge2H6 on Si surfaces Surface Science. 393: 205-221. DOI: 10.1016/S0039-6028(97)00587-6  0.716
1996 Jones ME, Roadman SE, Lam AM, Eres G, Engstrom JR. Supersonic molecular beam studies of the dissociative chemisorption of GeH4 and Ge2H6 on the Ge(100) and Ge(111) surfaces Journal of Chemical Physics. 105: 7140-7151. DOI: 10.1063/1.472516  0.607
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