| Year |
Citation |
Score |
| 2021 |
Poudel D, Belfore B, Ashrafee T, Karki S, Rajan G, Rockett A, Marsillac S. Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se Thin Films. Materials (Basel, Switzerland). 14. PMID 34203128 DOI: 10.3390/ma14133596 |
0.457 |
|
| 2020 |
Poudel D, Karki S, Belfore B, Rajan G, Atluri SS, Soltanmohammad S, Rockett A, Marsillac S. Degradation Mechanism Due to Water Ingress Effect on the Top Contact of Cu(In,Ga)Se2 Solar Cells Energies. 13: 4545. DOI: 10.3390/En13174545 |
0.392 |
|
| 2020 |
Karki S, Marsillac S, Deitz JI, Rajan G, Soltanmohammad S, Poudel D, Belfore B, Bhandari G, Grassman TJ, Rockett A. Impact of Water Ingress on Molybdenum Thin Films and Its Effect on Cu(In,Ga)Se 2 Solar Cells Ieee Journal of Photovoltaics. 10: 696-702. DOI: 10.1109/Jphotov.2019.2959947 |
0.51 |
|
| 2019 |
Adhikari D, Junda MM, Grice CR, Marsillac SX, Collins RW, Podraza NJ. Nanocrystalline Hydrogenated Silicon Solar Cells with RF-Magnetron Sputtered Absorbers. Materials (Basel, Switzerland). 12. PMID 31130599 DOI: 10.3390/Ma12101699 |
0.406 |
|
| 2019 |
Karki S, Paul P, Deitz JI, Poudel D, Rajan G, Belfore B, Danilov EO, Castellano FN, Grassman TJ, Arehart A, Rockett A, Marsillac S. Degradation Mechanism in Cu(In,Ga)Se2 Material and Solar Cells Due to Moisture and Heat Treatment of the Absorber Layer Ieee Journal of Photovoltaics. 9: 1138-1143. DOI: 10.1109/Jphotov.2019.2912707 |
0.437 |
|
| 2019 |
Belfore B, Ayala O, Ashrafee T, Rajan G, Karki S, Marsillac S. Modeling Diffusion of Impurities in Molybdenum Thin Films as a Function of Substrate Temperature Ieee Journal of Photovoltaics. 9: 339-343. DOI: 10.1109/Jphotov.2018.2882211 |
0.389 |
|
| 2019 |
Karki S, Marsillac S, Paul P, Rajan G, Belfore B, Poudel D, Rockett A, Danilov E, Castellano F, Arehart A. Analysis of Recombination Mechanisms in RbF-Treated CIGS Solar Cells Ieee Journal of Photovoltaics. 9: 313-318. DOI: 10.1109/Jphotov.2018.2877596 |
0.389 |
|
| 2019 |
Rajan G, Belfore B, Karki S, Poudel D, Kahoui H, Lanham N, Palmiotti E, Soltanmohammad S, Rockett A, Marsillac S. Impact of Post-Deposition Recrystallization by Alkali Fluorides on Cu(In,Ga)Se2Thin-Film Materials and Solar Cells Thin Solid Films. 690: 137526. DOI: 10.1016/J.Tsf.2019.137526 |
0.527 |
|
| 2018 |
Pradhan P, Aryal P, Attygalle D, Ibdah AR, Koirala P, Li J, Bhandari KP, Liyanage GK, Ellingson RJ, Heben MJ, Marsillac S, Collins RW, Podraza NJ. Real Time Spectroscopic Ellipsometry Analysis of First Stage CuIn1-xGaxSe₂ Growth: Indium-Gallium Selenide Co-Evaporation. Materials (Basel, Switzerland). 11. PMID 29337931 DOI: 10.3390/Ma11010145 |
0.6 |
|
| 2018 |
Rajan G, Aryal K, Karki S, Aryal P, Collins RW, Marsillac S. Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process Spectroscopy. 2018: 1-9. DOI: 10.1155/2018/8527491 |
0.563 |
|
| 2018 |
Deitz JI, Karki S, Marsillac SX, Grassman TJ, McComb DW. Bandgap profiling in CIGS solar cells via valence electron energy-loss spectroscopy Journal of Applied Physics. 123: 115703. DOI: 10.1063/1.5011658 |
0.323 |
|
| 2018 |
Ibdah AA, Koirala P, Aryal P, Pradhan P, Heben MJ, Podraza NJ, Marsillac S, Collins RW. Optical simulation of external quantum efficiency spectra of CuIn1−Ga Se2 solar cells from spectroscopic ellipsometry inputs Journal of Energy Chemistry. 27: 1151-1169. DOI: 10.1016/J.Jechem.2017.10.029 |
0.481 |
|
| 2017 |
Karki S, Paul PK, Rajan G, Ashrafee T, Aryal K, Pradhan P, Collins RW, Rockett A, Grassman TJ, Ringel SA, Arehart AR, Marsillac S. In Situ and Ex Situ Investigations of KF Postdeposition Treatment Effects on CIGS Solar Cells Ieee Journal of Photovoltaics. 7: 665-669. DOI: 10.1109/Jphotov.2016.2637659 |
0.57 |
|
| 2017 |
Adhikari D, Junda MM, Marsillac SX, Collins RW, Podraza NJ. Nanostructure evolution of magnetron sputtered hydrogenated silicon thin films Journal of Applied Physics. 122: 75302. DOI: 10.1063/1.4998455 |
0.527 |
|
| 2017 |
Ibdah A, Koirala P, Aryal P, Pradhan P, Marsillac S, Rockett AA, Podraza NJ, Collins RW. Spectroscopic ellipsometry for analysis of polycrystalline thin-film photovoltaic devices and prediction of external quantum efficiency Applied Surface Science. 421: 601-607. DOI: 10.1016/J.Apsusc.2016.12.236 |
0.456 |
|
| 2016 |
Aryal P, Ibdah AR, Pradhan P, Attygalle D, Koirala P, Podraza NJ, Marsillac S, Collins RW, Li J. Parameterized complex dielectric functions of CuIn1−xGaxSe2: applications in optical characterization of compositional non-uniformities and depth profiles in materials and solar cells Progress in Photovoltaics: Research and Applications. 24: 1200-1213. DOI: 10.1002/Pip.2774 |
0.581 |
|
| 2016 |
Koirala P, Li J, Yoon HP, Aryal P, Marsillac S, Rockett AA, Podraza NJ, Collins RW. Through-the-glass spectroscopic ellipsometry for analysis of CdTe thin-film solar cells in the superstrate configuration Progress in Photovoltaics: Research and Applications. DOI: 10.1002/Pip.2759 |
0.528 |
|
| 2015 |
Chen W, Cao W, Hameed TA, Marsillac S, Elsayed-Ali HE. Properties of Cu(In,Ga,Al)Se2 thin films fabricated by pulsed laser deposition Journal of Materials Science: Materials in Electronics. 26: 1743-1747. DOI: 10.1007/S10854-014-2602-Y |
0.559 |
|
| 2014 |
Aryal P, Pradhan P, Attygalle D, Ibdah ARA, Aryal K, Ranjan V, Marsillac S, Podraza NJ, Collins RW. Real-time, in-line, and mapping spectroscopic ellipsometry for applications in Cu(In1-xGax)Se2 metrology Ieee Journal of Photovoltaics. 4: 333-339. DOI: 10.1109/Jphotov.2013.2282745 |
0.656 |
|
| 2014 |
Koirala P, Attygalle D, Aryal P, Pradhan P, Chen J, Marsillac S, Ferlauto AS, Podraza NJ, Collins RW. Real time spectroscopic ellipsometry for analysis and control of thin film polycrystalline semiconductor deposition in photovoltaics Thin Solid Films. 571: 442-446. DOI: 10.1016/J.Tsf.2013.10.158 |
0.539 |
|
| 2014 |
Ranjan V, Begou T, Little S, Collins RW, Marsillac S. Non-destructive optical analysis of band gap profile, crystalline phase, and grain size for Cu(In,Ga)Se2 solar cells deposited by 1-stage, 2-stage, and 3-stage co-evaporation Progress in Photovoltaics: Research and Applications. 22: 77-82. DOI: 10.1002/Pip.2350 |
0.715 |
|
| 2013 |
Attygalle D, Ranjan V, Aryal P, Pradhan P, Marsillac S, Podraza NJ, Collins RW. Optical monitoring and control of three-stage coevaporated Cu(In 1-x Gax)Se 2 by real-time spectroscopic ellipsometry Ieee Journal of Photovoltaics. 3: 375-380. DOI: 10.1109/Jphotov.2012.2220122 |
0.678 |
|
| 2012 |
Aryal K, Khatri H, Collins RW, Marsillac S. In situ and Ex situ studies of molybdenum thin films deposited by rf and dc magnetron sputtering as a back contact for CIGS solar cells International Journal of Photoenergy. 2012. DOI: 10.1155/2012/723714 |
0.588 |
|
| 2012 |
Marsillac S, Khatri H, Aryal K, Collins RW. Properties of Cu(In,Ga) Se 2 thin films and solar cells deposited by hybrid process International Journal of Photoenergy. 2012. DOI: 10.1155/2012/385185 |
0.614 |
|
| 2012 |
Marsillac S, Collins RW. Spectroscopic ellipsometry: Metrology for photovoltaics from the nanoscale to gigawatts Proceedings of Spie - the International Society For Optical Engineering. 8256. DOI: 10.1117/12.909628 |
0.455 |
|
| 2012 |
Little SA, Ranjan V, Collins RW, Marsillac S. Growth analysis of (Ag,Cu)InSe2 thin films via real time spectroscopic ellipsometry Applied Physics Letters. 101. DOI: 10.1063/1.4769902 |
0.77 |
|
| 2012 |
Little SA, Begou T, Collins RW, Marsillac S. Optical detection of melting point depression for silver nanoparticles via in situ real time spectroscopic ellipsometry Applied Physics Letters. 100. DOI: 10.1063/1.3681367 |
0.637 |
|
| 2012 |
Ranjan V, Collins RW, Marsillac S. Real-time analysis of the microstructural evolution and optical properties of Cu(In,Ga)Se 2 thin films as a function of Cu content Physica Status Solidi - Rapid Research Letters. 6: 10-12. DOI: 10.1002/Pssr.201105385 |
0.734 |
|
| 2011 |
Abou-Ras D, Caballero R, Fischer CH, Kaufmann CA, Lauermann I, Mainz R, Mönig H, Schöpke A, Stephan C, Streeck C, Schorr S, Eicke A, Döbeli M, Gade B, Hinrichs J, ... ... Marsillac S, et al. Comprehensive comparison of various techniques for the analysis of elemental distributions in thin films. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 17: 728-51. PMID 21906418 DOI: 10.1017/S1431927611000523 |
0.471 |
|
| 2011 |
Little SA, Collins RW, Marsillac S. Analysis of interband, intraband, and plasmon polariton transitions in silver nanoparticle films via in situ real-time spectroscopic ellipsometry Applied Physics Letters. 98. DOI: 10.1063/1.3564894 |
0.7 |
|
| 2011 |
Desireddy A, Joshi CP, Sestak M, Little S, Kumar S, Podraza NJ, Marsillac S, Collins RW, Bigioni TP. Wafer-scale self-assembled plasmonic thin films Thin Solid Films. 519: 6077-6084. DOI: 10.1016/J.Tsf.2011.03.111 |
0.709 |
|
| 2011 |
Marsillac S, Mangale NS, Gade V, Khare SV. Structural and electronic properties of β-In2X3 (X = O, S, Se, Te) using ab initio calculations Thin Solid Films. 519: 5679-5683. DOI: 10.1016/J.Tsf.2011.02.092 |
0.32 |
|
| 2011 |
Dahal LR, Sainju D, Podraza NJ, Marsillac S, Collins RW. Real time spectroscopic ellipsometry of Ag/ZnO and Al/ZnO interfaces for back-reflectors in thin film Si:H photovoltaics Thin Solid Films. 519: 2682-2687. DOI: 10.1016/J.Tsf.2010.11.093 |
0.495 |
|
| 2011 |
Marsillac S, Little SA, Collins RW. A broadband analysis of the optical properties of silver nanoparticle films by in situ real time spectroscopic ellipsometry Thin Solid Films. 519: 2936-2940. DOI: 10.1016/J.Tsf.2010.11.065 |
0.729 |
|
| 2011 |
Begou T, Walker JD, Attygalle D, Ranjan V, Collins RW, Marsillac S. Real time spectroscopic ellipsometry of CuInSe 2: Growth dynamics, dielectric function, and its dependence on temperature Physica Status Solidi - Rapid Research Letters. 5: 217-219. DOI: 10.1002/Pssr.201105204 |
0.585 |
|
| 2009 |
Walker JD, Khatri H, Little S, Ranjan V, Collins R, Marsillac S. Optical and Physical Characterization of Cu 2-x Se Thin Films for Real Time Spectroscopic Ellipsometry on Cu(In,Ga)Se 2 -based Photovoltaic Devices Mrs Proceedings. 1210. DOI: 10.1557/Proc-1210-Q06-02 |
0.748 |
|
| 2009 |
Walker JD, Khatri H, Ranjan V, Li J, Collins RW, Marsillac S. Electronic and structural properties of molybdenum thin films as determined by real-time spectroscopic ellipsometry Applied Physics Letters. 94. DOI: 10.1063/1.3117222 |
0.714 |
|
| 2008 |
Khatri H, Marsillac S. The effect of deposition parameters on radiofrequency sputtered molybdenum thin films Journal of Physics: Condensed Matter. 20: 55206. DOI: 10.1088/0953-8984/20/05/055206 |
0.488 |
|
| 2008 |
Marsillac S, Barreau N, Khatri H, Li J, Sainju D, Parikh A, Podraza NJ, Collins RW. Spectroscopic ellipsometry studies of in2S3 top window and Mo back contacts in chalcopyrite photovoltaics technology Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1244-1248. DOI: 10.1002/Pssc.200777889 |
0.458 |
|
| 2007 |
Parikh V, Chen J, Marsillac S, Collins RW, Compaan AD. Hg1-xCdxTe as the Bottom Cell Material in Tandem II-VI Solar Cells Mrs Proceedings. 1012. DOI: 10.1557/Proc-1012-Y12-37 |
0.546 |
|
| 2007 |
Vasko A, Compaan AD, Marsillac S. Transparent Back Contacts in CdTe/CdS: Evaluation for Tandem Cells Mrs Proceedings. 1012. DOI: 10.1557/Proc-1012-Y02-08 |
0.343 |
|
| 2007 |
Shvydka D, Drayton J, Mitra M, Marsillac SX, Jacob F. Pressure dependence of photovoltaic parameters in thin film Cu(In,Ga)Se2 solar cells Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 1: 465-467. DOI: 10.1109/WCPEC.2006.279491 |
0.37 |
|
| 2007 |
Marsillac S, Parikh VY, Compaan AD. Ultra-thin bifacial CdTe solar cell Solar Energy Materials and Solar Cells. 91: 1398-1402. DOI: 10.1016/J.Solmat.2007.04.025 |
0.378 |
|
| 2005 |
Halgand E, Bernède JC, Marsillac S, Kessler J. Physico-chemical characterisation of Cu(In,Al)Se2 thin film for solar cells obtained by a selenisation process Thin Solid Films. 480: 443-446. DOI: 10.1016/J.Tsf.2004.11.039 |
0.623 |
|
| 2005 |
Robles R, Barreau N, Vega A, Marsillac S, Bernède JC, Mokrani A. Optical properties of large band gap β-In2S3−3xO3x compounds obtained by physical vapour deposition Optical Materials. 27: 647-653. DOI: 10.1016/J.Optmat.2004.03.015 |
0.428 |
|
| 2004 |
Marsillac S, Dorn S, Rocheleau R, Miller E. Low-temperature deposition of Cu(InGa)Se2 solar cells on various substrates Solar Energy Materials and Solar Cells. 82: 45-52. DOI: 10.1016/J.Solmat.2004.01.004 |
0.58 |
|
| 2003 |
Amory C, Bernède JC, Marsillac S. Study of a growth instability of λ-In2Se3 Journal of Applied Physics. 94: 6945-6948. DOI: 10.1063/1.1622117 |
0.412 |
|
| 2003 |
Barreau N, Marsillac S, Bernède JC, Assmann L. Evolution of the band structure of β-In2S3−3xO3x buffer layer with its oxygen content Journal of Applied Physics. 93: 5456-5459. DOI: 10.1063/1.1565823 |
0.519 |
|
| 2003 |
Marsillac S, Zouaghi MC, Bernède JC, Nasrallah TB, Belgacem S. Evolution of the properties of spray-deposited CuInS2 thin films with post-annealing treatment Solar Energy Materials and Solar Cells. 76: 125-134. DOI: 10.1016/S0927-0248(02)00210-6 |
0.553 |
|
| 2003 |
Maliki HE, Bernède J-, Marsillac S, Pinel J, Castel X, Pouzet J. Study of the influence of annealing on the properties of CBD-CdS thin films Applied Surface Science. 205: 65-79. DOI: 10.1016/S0169-4332(02)01082-6 |
0.565 |
|
| 2003 |
Amory C, Bernède JC, Halgand E, Marsillac S. Cu(In,Ga)Se2 films obtained from γ-In2Se3 thin film Thin Solid Films. 431: 22-25. DOI: 10.1016/S0040-6090(03)00237-2 |
0.58 |
|
| 2003 |
Barreau N, Bernède JC, Marsillac S, Amory C, Shafarman WN. New Cd-free buffer layer deposited by PVD: In2S3 containing Na compounds Thin Solid Films. 431: 326-329. DOI: 10.1016/S0040-6090(03)00216-5 |
0.531 |
|
| 2003 |
Barkat L, Morsli M, Amory C, Marsillac S, Khelil A, Bernède JC, El Moctar C. Study on the fabrication of n-type CuAlSe2 thin films Thin Solid Films. 431: 99-104. DOI: 10.1016/S0040-6090(03)00209-8 |
0.468 |
|
| 2002 |
Marsillac S, Paulson PD, Haimbodi MW, Birkmire RW, Shafarman WN. High-efficiency solar cells based on Cu(InAl)Se2 thin films Applied Physics Letters. 81: 1350-1352. DOI: 10.1063/1.1499990 |
0.518 |
|
| 2002 |
Paulson PD, Haimbodi MW, Marsillac S, Birkmire RW, Shafarman WN. CuIn 1-xAl xSe 2 thin films and solar cells Journal of Applied Physics. 91: 10153-10156. DOI: 10.1063/1.1476966 |
0.573 |
|
| 2002 |
Barreau N, Marsillac S, Bernede JC, Assmann L, Jousseaume V. Morphological study by XPS and AFM of wide band gap β-ln 2 S 3 thin films synthesized by a dry physical process Journal of Materials Science: Materials in Electronics. 13: 95-100. DOI: 10.1023/A:1013654223916 |
0.574 |
|
| 2002 |
Marsillac S, Wahiba TB, Moctar CE, Bernede JC, Khelil A. Evolution of the properties of CuAlSe2 thin films with the oxygen content Solar Energy Materials and Solar Cells. 71: 425-434. DOI: 10.1016/S0927-0248(01)00097-6 |
0.566 |
|
| 2002 |
Bernède JC, Barreau N, Marsillac S, Assmann L. Band alignment at β-In2S3/TCO interface Applied Surface Science. 195: 222-228. DOI: 10.1016/S0169-4332(02)00551-2 |
0.329 |
|
| 2002 |
Barreau N, Marsillac S, Albertini D, Bernede JC. Structural, optical and electrical properties of β-In2S3-3xO3x thin films obtained by PVD Thin Solid Films. 403: 331-334. DOI: 10.1016/S0040-6090(01)01512-7 |
0.553 |
|
| 2002 |
Barreau N, Bernède JC, Maliki HE, Marsillac S, Castel X, Pinel J. Recent studies on In2S3 containing oxygen thin films Solid State Communications. 122: 445-450. DOI: 10.1016/S0038-1098(02)00099-6 |
0.59 |
|
| 2002 |
Barreau N, Bernède JC, Marsillac S. Study of the new β-In2S3 containing Na thin films. Part II: Optical and electrical characterization of thin films Journal of Crystal Growth. 241: 51-56. DOI: 10.1016/S0022-0248(02)01243-5 |
0.5 |
|
| 2002 |
Barreau N, Bernède JC, Deudon C, Brohan L, Marsillac S. Study of the new β-In2S3 containing Na thin films Part I: Synthesis and structural characterization of the material Journal of Crystal Growth. 241: 4-14. DOI: 10.1016/S0022-0248(02)01242-3 |
0.498 |
|
| 2002 |
Barreau N, Bernède JC, Marsillac S, Mokrani A. Study of low temperature elaborated tailored optical band gap β-In2S3−3xO3x thin films Journal of Crystal Growth. 235: 439-449. DOI: 10.1016/S0022-0248(01)02040-1 |
0.536 |
|
| 2002 |
Brovelli F, Bernède JC, Marsillac S, Díaz FR, Valle MAD, Beaudouin C. Study of the I–V characteristics of organic light‐emitting diodes based on thiophene vynilic derivatives Journal of Applied Polymer Science. 86: 1128-1137. DOI: 10.1002/App.11149 |
0.473 |
|
| 2001 |
Maliki HE, Marsillac S, Bernède JC, Faulques E, Wery J. The influence of the substitution of Te for Se on the photoconductive properties of In2Se3-xTe3x thin films Journal of Physics: Condensed Matter. 13: 1839-1850. DOI: 10.1088/0953-8984/13/9/307 |
0.589 |
|
| 2001 |
Bernède JC, Marsillac S, Moctar COE, Chouk KB, Khelil A. On the influence of oxygen contamination on the properties of CuAlX2 (X = Se, Te) Journal of Materials Science. 36: 87-92. DOI: 10.1023/A:1004894825543 |
0.544 |
|
| 2001 |
Djobo SO, Bernède JC, Marsillac S. Poly(N-vinylcarbazole) (PVK) deposited by evaporation for light emitting diodes thin films structures Synthetic Metals. 122: 131-133. DOI: 10.1016/S0379-6779(00)01348-5 |
0.54 |
|
| 2001 |
D’Almeida K, Bernéde JC, Marsillac S, Godoy A, Diaz FR. Carbazole based electroluminescent devices obtained by vacuum evaporation Synthetic Metals. 122: 127-129. DOI: 10.1016/S0379-6779(00)01347-3 |
0.536 |
|
| 2001 |
Zouaghi MC, Nasrallah TB, Marsillac S, Bernède JC, Belgacem S. Physico-chemical characterization of spray-deposited CuInS2 thin films Thin Solid Films. 382: 39-46. DOI: 10.1016/S0040-6090(00)01699-0 |
0.594 |
|
| 2001 |
Barreau N, Marsillac S, Bernède JC, Nasrallah TB, Belgacem S. Optical Properties of Wide Band Gap Indium Sulphide Thin Films Obtained by Physical Vapor Deposition Physica Status Solidi (a). 184: 179-186. DOI: 10.1002/1521-396X(200103)184:1<179::Aid-Pssa179>3.0.Co;2-6 |
0.517 |
|
| 2000 |
Gourmelon E, Bernède JC, Pouzet J, Marsillac S. Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact Journal of Applied Physics. 87: 1182-1186. DOI: 10.1063/1.372061 |
0.552 |
|
| 2000 |
Benchouk K, Benseddik E, Moctar COE, Bernède JC, Marsillac S, Pouzet J, Khellil A. New buffer layers, large band gap ternary compounds: CuAlTe2 European Physical Journal-Applied Physics. 10: 9-14. DOI: 10.1051/Epjap:2000114 |
0.562 |
|
| 2000 |
Emziane M, Marsillac S, Bernède JC. Preparation of highly oriented α-In2Se3 thin films by a simple technique Materials Chemistry and Physics. 62: 84-87. DOI: 10.1016/S0254-0584(99)00145-5 |
0.551 |
|
| 2000 |
Barreau N, Marsillac S, Bernède JC, Barreau A. Investigation of β-In2S3 growth on different transparent conductive oxides Applied Surface Science. 161: 20-26. DOI: 10.1016/S0169-4332(00)00040-4 |
0.553 |
|
| 2000 |
Barreau N, Marsillac S, Bernède JC. Physico-chemical characterization of β-In2S3 thin films synthesized by solid-state reaction, induced by annealing, of the constituents sequentially deposited in thin layers Vacuum. 56: 101-106. DOI: 10.1016/S0042-207X(99)00176-1 |
0.526 |
|
| 2000 |
Moctar COE, Kambas K, Marsillac S, Anagnostopoulos A, Bernède JC, Benchouck K. Optical properties of CuAlX2 (X=Se, Te) thin films obtained by annealing of copper, aluminum and chalcogen layers sequentially deposited Thin Solid Films. 371: 195-200. DOI: 10.1016/S0040-6090(00)00985-8 |
0.564 |
|
| 1999 |
Benchouk K, Moctar CE, Bernede JC, Marsillac S, Pouzet J, Barreau N, Emziane M. Growth and physicochemical characterization of CuAlTe2 films obtained by reaction, induced by annealing, between Cu/Al/Te/Al/Cu... Al/Cu/Al/Te layers sequentially deposited Journal of Materials Science. 34: 1847-1853. DOI: 10.1023/A:1004575612586 |
0.578 |
|
| 1999 |
Marsillac S, Bernède JC, Emziane M, Wery J, Faulques E, Ray PL. Properties of photoconductive In2Se3 thin films, crystallized by post-deposition heat treatment in nitrogen atmosphere Applied Surface Science. 151: 171-179. DOI: 10.1016/S0169-4332(99)00300-1 |
0.584 |
|
| 1999 |
Moctar COE, Marsillac S, Bernede JC, Conan A, Benchouk K, Khelil A. Réalisation de couches minces de CuAlSe2 par recuit de feuilllets superposés Cu/Al/Se/Al…, étude de conditions de dépét Physica Status Solidi (a). 174: 213-220. DOI: 10.1002/(Sici)1521-396X(199907)174:1<213::Aid-Pssa213>3.0.Co;2-8 |
0.528 |
|
| 1997 |
Marsillac S, Benchouk K, Moctar CE, Bernède JC, Pouzet J, Khellil A, Jamali M. CuAlSe2 Thin Films Obtained by Chalcogenization Journal De Physique Iii. 7: 2165-2169. DOI: 10.1051/Jp3:1997249 |
0.532 |
|
| 1997 |
Marsillac S, Bernede JC, Moctar CE, Pouzet J. Physico-chemical characterization of CuAlSe2 films obtained by reaction, induced by annealing, between Se vapour and Al/Cu/AI…Cu/Al/Cu thin films sequentially deposited Materials Science and Engineering B-Advanced Functional Solid-State Materials. 45: 69-75. DOI: 10.1016/S0921-5107(96)02031-4 |
0.605 |
|
| 1997 |
Bernède JC, Marsillac S, Conan A. Electrical properties of γ-In2Se3 layers synthesized by solid state reaction between In and Se thin films Materials Chemistry and Physics. 48: 5-9. DOI: 10.1016/S0254-0584(97)80068-5 |
0.496 |
|
| 1997 |
Emziane M, Marsillac S, Ouerfelli J, Bernède J, Ny RL. γ-In2Se3 thin films obtained by annealing sequentially evaporated In and Se layers in flowing argon Vacuum. 48: 871-878. DOI: 10.1016/S0042-207X(97)00094-8 |
0.583 |
|
| 1997 |
Bernède JC, Marsillac S, Moctar CE, Conan A. Optical and Electrical Properties of CuAlSe2 Thin Films Obtained by Selenization of Cu/Al/Cu…Al/Cu Layers Sequentially Deposited Physica Status Solidi (a). 161: 185-192. DOI: 10.1002/1521-396X(199705)161:1<185::Aid-Pssa185>3.0.Co;2-N |
0.586 |
|
| 1996 |
Bernède JC, Marsillac S, Conan A, Godoy A. The influence of microcrystalline inhomogeneities embedded in amorphous ? films on their electrical and optical properties Journal of Physics: Condensed Matter. 8: 3439-3451. DOI: 10.1088/0953-8984/8/19/019 |
0.466 |
|
| 1996 |
Marsillac S, Combot-Marie AM, Bernède JC, Conan A. Experimental evidence of the low-temperature formation of γ-In2Se3 thin films obtained by a solid-state reaction Thin Solid Films. 288: 14-20. DOI: 10.1016/S0040-6090(96)08799-8 |
0.493 |
|
| 1996 |
Marsillac S, Bernéde JC, Conan A. Change in the type of majority carriers in disordered ln x Se100−x thin-film alloys Journal of Materials Science. 31: 581-587. DOI: 10.1007/Bf00367872 |
0.498 |
|
| 1995 |
Marsillac S, Bernede J, Ny R, Conan A. A new simple technique to obtain In2Se3 polycrystalline thin films Vacuum. 46: 1315-1323. DOI: 10.1016/0042-207X(95)00020-8 |
0.567 |
|
| Show low-probability matches. |
