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Yang-Yu Fan, Ph.D. - Publications

Affiliations: 
2002 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Guo JC, Wang Lz, Chen W, Du CF, Mo ZJ, Fan YB. Parametric study of orthopedic insole of valgus foot on partial foot amputation Computer Methods in Biomechanics and Biomedical Engineering. DOI: 10.1080/10255842.2015.1076803  0.364
2006 Li F, Mudanai SP, Fan YY, Register LF, Banerjee SK. Physically based quantum - Mechanical compact model of MOS devices substrate-injected tunneling current through ultrathin (EOT ∼ 1nm) SiO2 and high-k gate stacks Ieee Transactions On Electron Devices. 53: 1096-1106. DOI: 10.1109/Ted.2006.871877  0.527
2003 Fan YY, Xiang Q, An J, Register LF, Banerjee SK. Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack: Its tradeoff with gate capacitance Ieee Transactions On Electron Devices. 50: 433-439. DOI: 10.1109/Ted.2003.809433  0.517
2002 Fan YY, Nieh RE, Lee JC, Lucovsky G, Brown GA, Register LF, Banerjee SK. Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor Ieee Transactions On Electron Devices. 49: 1969-1978. DOI: 10.1109/Ted.2002.804713  0.517
2000 Mudanai S, Fan YY, Ouyang Q, Tasch AF, Banerjee SK. Modeling of direct tunneling current through gate dielectric stacks Ieee Transactions On Electron Devices. 47: 1851-1857. DOI: 10.1109/16.870561  0.375
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