Year |
Citation |
Score |
2020 |
Kim HJ, Han CJ, Yoo B, Lee J, Lee K, Lee KH, Oh MS. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array. Micromachines. 11. PMID 32443447 DOI: 10.3390/mi11050508 |
0.307 |
|
2017 |
Kim Y, Kim KH, Lee A, Kim M, Yoo B, Lee J. Highly Fluorinated Polymer-Inorganic Nanoparticle Composites Processable with Fluorous Solvents Journal of Nanoscience and Nanotechnology. 17: 5510-5514. DOI: 10.1166/Jnn.2017.14179 |
0.306 |
|
2016 |
Kim KH, Kim YT, Lee J, Yoo B. Characterization of Soluble Fluorinated Dielectric Nanomaterials for Printed Thin Film Transistors Ran. DOI: 10.11159/Icnnfc16.108 |
0.401 |
|
2016 |
Yoo G, Choi SL, Lee S, Yoo B, Kim S, Oh MS. Enhancement-mode operation of multilayer MoS2 transistors with a fluoropolymer gate dielectric layer Applied Physics Letters. 108. DOI: 10.1063/1.4955024 |
0.405 |
|
2016 |
Hong YK, Yoo G, Kwon J, Hong S, Song WG, Liu N, Omkaram I, Yoo B, Ju S, Kim S, Oh MS. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics Aip Advances. 6. DOI: 10.1063/1.4953062 |
0.395 |
|
2016 |
Yoo G, Choi SL, Yoo B, Oh MS. Solution-processed high-k oxide dielectric via deep ultraviolet and rapid thermal annealing for high-performance MoS2 FETs Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201600619 |
0.413 |
|
2015 |
Kwon J, Hong YK, Kwon HJ, Park YJ, Yoo B, Kim J, Grigoropoulos CP, Oh MS, Kim S. Optically transparent thin-film transistors based on 2D multilayer MoS₂ and indium zinc oxide electrodes. Nanotechnology. 26: 035202. PMID 25548952 DOI: 10.1088/0957-4484/26/3/035202 |
0.366 |
|
2015 |
Kim H, Jo SH, Jee JH, Han W, Kim Y, Park HH, Jin HJ, Yoo B, Lee JK. Fluorous-inorganic hybrid dielectric materials for solution-processed electronic devices New Journal of Chemistry. 39: 836-842. DOI: 10.1039/C4Nj01435A |
0.424 |
|
2014 |
Kim J, Kang J, Cho S, Yoo B, Kim YH, Park SK. Effect of grain boundary on the field-effect mobility of microrod single crystal organic transistors. Journal of Nanoscience and Nanotechnology. 14: 8153-7. PMID 25958490 DOI: 10.1166/Jnn.2014.9899 |
0.35 |
|
2014 |
Kim J, Park SK, Lee J, Yoo B, Lee J, Kim Y. Hydrophobic perfluoropolymer thin-film encapsulation for enhanced stability of inverted polymer solar cells Journal of the Korean Physical Society. 65: 1448-1452. DOI: 10.3938/Jkps.65.1448 |
0.363 |
|
2014 |
Kwon H, Choi W, Lee D, Lee Y, Kwon J, Yoo B, Grigoropoulos CP, Kim S. Selective and localized laser annealing effect for high-performance flexible multilayer MoS2 thin-film transistors Nano Research. 7: 1137-1145. DOI: 10.1007/S12274-014-0476-1 |
0.342 |
|
2013 |
Lee J, Kim do H, Kim JY, Yoo B, Chung JW, Park JI, Lee BL, Jung JY, Park JS, Koo B, Im S, Kim JW, Song B, Jung MH, Jang JE, et al. Reliable and uniform thin-film transistor arrays based on inkjet-printed polymer semiconductors for full color reflective displays. Advanced Materials (Deerfield Beach, Fla.). 25: 5886-92. PMID 23960028 DOI: 10.1002/adma.201301257 |
0.381 |
|
2013 |
Wang S, Choi Y, Yoo B, Kim Y, Park H. Effect of Surface Chemisorption between Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) and Ag Nanoparticles on the Conductivity of the Nanocomposite Film Chemistry Letters. 42: 615-617. DOI: 10.1246/Cl.130087 |
0.309 |
|
2012 |
Kim YH, Yoo B, Anthony JE, Park SK. Controlled deposition of a high-performance small-molecule organic single-crystal transistor array by direct ink-jet printing. Advanced Materials (Deerfield Beach, Fla.). 24: 497-502. PMID 22213548 DOI: 10.1002/Adma.201103032 |
0.323 |
|
2007 |
Yoo B, Dodabalapur A, Lee DC, Hanrath T, Korgel BA. Germanium nanowire transistors with ethylene glycol treated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) contacts Applied Physics Letters. 90. DOI: 10.1063/1.2535710 |
0.567 |
|
2007 |
Yoo B, Jones BA, Basu D, Fine D, Jung T, Mohapatra S, Facchetti A, Dimmler K, Wasielewski MR, Marks TJ, Dodabalapur A. High-performance solution-deposited n-channel organic transistors and their complementary circuits Advanced Materials. 19: 4028-4032. DOI: 10.1002/Adma.200700064 |
0.676 |
|
2006 |
Basu D, Wang L, Dunn L, Yoo B, Nadkarni S, Dodabalapur A, Heeney M, McCulloch I. Direct measurement of carrier drift velocity and mobility in a polymer field-effect transistor Applied Physics Letters. 89. DOI: 10.1063/1.2405378 |
0.565 |
|
2006 |
Nadkarni S, Yoo B, Basu D, Dodabalapur A. Actuation of water droplets driven by an organic transistor based inverter Applied Physics Letters. 89. DOI: 10.1063/1.2374685 |
0.675 |
|
2006 |
Jung T, Yoo B, Wang L, Dodabalapur A, Jones BA, Facchetti A, Wasielewski MR, Marks TJ. Nanoscale n-channel and ambipolar organic field-effect transistors Applied Physics Letters. 88: 183102. DOI: 10.1063/1.2200591 |
0.595 |
|
2006 |
Yoo B, Jung T, Basu D, Dodabalapur A, Jones BA, Facchetti A, Wasielewski MR, Marks TJ. High-mobility bottom-contact n-channel organic transistors and their use in complementary ring oscillators Applied Physics Letters. 88: 082104. DOI: 10.1063/1.2177627 |
0.676 |
|
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