Year |
Citation |
Score |
2019 |
Chang H, Narayanan P, Lewis SC, Farinha NCP, Hosokawa K, Mackin C, Tsai H, Ambrogio S, Chen A, Burr GW. AI hardware acceleration with analog memory: Microarchitectures for low energy at high speed Journal of Reproduction and Development. 63. DOI: 10.1147/Jrd.2019.2934050 |
0.371 |
|
2019 |
Giordano M, Cristiano G, Ishibashi K, Ambrogio S, Tsai H, Burr GW, Narayanan P. Analog-to-Digital Conversion With Reconfigurable Function Mapping for Neural Networks Activation Function Acceleration Ieee Journal On Emerging and Selected Topics in Circuits and Systems. 9: 367-376. DOI: 10.1109/Jetcas.2019.2911537 |
0.35 |
|
2018 |
Romero LP, Ambrogio S, Giordano M, Cristiano G, Bodini M, Narayanan P, Tsai H, Shelby RM, Burr GW. Training fully connected networks with resistive memories: impact of device failures. Faraday Discussions. PMID 30357183 DOI: 10.1039/C8Fd00107C |
0.356 |
|
2018 |
Ambrogio S, Narayanan P, Tsai H, Shelby RM, Boybat I, di Nolfo C, Sidler S, Giordano M, Bodini M, Farinha NCP, Killeen B, Cheng C, Jaoudi Y, Burr GW. Equivalent-accuracy accelerated neural-network training using analogue memory. Nature. 558: 60-67. PMID 29875487 DOI: 10.1038/S41586-018-0180-5 |
0.321 |
|
2018 |
Fumarola A, Sidler S, Moon K, Jang J, Shelby RM, Narayanan P, Leblebici Y, Hwang H, Burr GW. Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr 0.7 Ca 0.3 MnO 3 Device Characteristics on Neural Network Training Accuracy Ieee Journal of the Electron Devices Society. 6: 169-178. DOI: 10.1109/Jeds.2017.2782184 |
0.32 |
|
2018 |
Moon K, Fumarola A, Sidler S, Jang J, Narayanan P, Shelby RM, Burr GW, Hwang H. Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr 0.7 Ca 0.3 MnO 3 Material Improvements and Device Measurements Ieee Journal of the Electron Devices Society. 6: 146-155. DOI: 10.1109/Jeds.2017.2780275 |
0.333 |
|
2018 |
Cristiano G, Giordano M, Ambrogio S, Romero LP, Cheng C, Narayanan P, Tsai H, Shelby RM, Burr GW. Perspective on training fully connected networks with resistive memories: Device requirements for multiple conductances of varying significance Journal of Applied Physics. 124: 151901. DOI: 10.1063/1.5042462 |
0.365 |
|
2017 |
Narayanan P, Fumarola A, Sanches LL, Hosokawa K, Lewis SC, Shelby RM, Burr GW. Toward on-chip acceleration of the backpropagation algorithm using nonvolatile memory Journal of Reproduction and Development. 61: 11. DOI: 10.1147/Jrd.2017.2716579 |
0.389 |
|
2016 |
Narayanan P, Burr GW, Virwani K, Kurdi B. Circuit-Level Benchmarking of Access Devices for Resistive Nonvolatile Memory Arrays Ieee Journal On Emerging and Selected Topics in Circuits and Systems. DOI: 10.1109/Jetcas.2016.2547744 |
0.31 |
|
2015 |
Virwani K, Burr GW, Narayanan P, Kurdi B. Mixed-Ionic-Electronic-Conduction (MIEC)-Based Access Devices for 3D Multilayer Crosspoint Memory Mrs Proceedings. 1729: 3-14. DOI: 10.1557/Opl.2015.24 |
0.372 |
|
2015 |
Padilla A, Burr GW, Shenoy RS, Raman KV, Bethune DS, Shelby RM, Rettner CT, Mohammad J, Virwani K, Narayanan P, Deb AK, Pandey RK, Bajaj M, Murali KVRM, Kurdi BN, et al. On the origin of steep i - V nonlinearity in mixed-ionic-electronic-conduction-based access devices Ieee Transactions On Electron Devices. 62: 963-971. DOI: 10.1109/Ted.2015.2389832 |
0.31 |
|
2015 |
Narayanan P, Burr GW, Shenoy RS, Stephens S, Virwani K, Padilla A, Kurdi BN, Gopalakrishnan K. Exploring the design space for crossbar arrays built with mixed-ionic-electronic-conduction (MIEC) access devices Ieee Journal of the Electron Devices Society. 3: 423-434. DOI: 10.1109/Jeds.2015.2442242 |
0.339 |
|
2014 |
Burr GW, Shenoy RS, Virwani K, Narayanan P, Padilla A, Kurdi B, Hwang H. Access devices for 3D crosspoint memory Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4889999 |
0.372 |
|
2014 |
Shenoy RS, Burr GW, Virwani K, Jackson B, Padilla A, Narayanan P, Rettner CT, Shelby RM, Bethune DS, Raman KV, Brightsky M, Joseph E, Rice PM, Topuria T, Kellock AJ, et al. MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/10/104005 |
0.374 |
|
2014 |
Moritz CA, Khasanvis S, Narayanan P. Introduction to JPDC special issue on computing with future nanotechnology Journal of Parallel and Distributed Computing. 74: 2439-2440. DOI: 10.1016/J.Jpdc.2014.02.007 |
0.581 |
|
2014 |
Zhang J, Rahman M, Narayanan P, Khasanvis S, Moritz CA. Parameter Variation Sensing and Estimation in Nanoscale Fabrics Journal of Parallel and Distributed Computing. 74: 2504-2511. DOI: 10.1016/J.Jpdc.2013.08.005 |
0.301 |
|
2013 |
Narayanan P, Leuchtenburg M, Kina J, Joshi P, Panchapakeshan P, Chui CO, Andras Moritz C. Variability in nanoscale fabrics: Bottom-up integrated analysis and mitigation Acm Journal On Emerging Technologies in Computing Systems. 9. DOI: 10.1145/2422094.2422102 |
0.405 |
|
2012 |
Chui CO, Shin KS, Kina J, Shih KH, Narayanan P, Andras Moritz C. Heterogeneous integration of epitaxial nanostructures - Strategies and application drivers Proceedings of Spie - the International Society For Optical Engineering. 8467. DOI: 10.1117/12.970438 |
0.391 |
|
2012 |
Khan MMU, Narayanan P, Joshi P, Panchapakeshan P, Moritz CA. FastTrack: Toward nanoscale fault masking with high performance Ieee Transactions On Nanotechnology. 11: 720-730. DOI: 10.1109/Tnano.2012.2194303 |
0.622 |
|
2012 |
Narayanan P, Kina J, Panchapakeshan P, Chui CO, Moritz CA. Integrated device-fabric explorations and noise mitigation in nanoscale fabrics Ieee Transactions On Nanotechnology. 11: 687-700. DOI: 10.1109/Tnano.2012.2189413 |
0.605 |
|
2012 |
Moritz CA, Narayanan P, Khasanvis S. Call for Papers: Special Issue of Journal of Parallel and Distributed Computing: Computing with Future Nanotechnology Journal of Parallel and Distributed Computing. 72: 1781. DOI: 10.1016/J.Jpdc.2012.10.002 |
0.586 |
|
2011 |
Guo Y, Narayanan P, Bennaser MA, Chheda S, Moritz CA. Energy-efficient hardware data prefetching Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 19: 250-263. DOI: 10.1109/Tvlsi.2009.2032916 |
0.619 |
|
2011 |
Rahman M, Narayanan P, Moritz CA. N 3asic-based nanowire volatile RAM Proceedings of the Ieee Conference On Nanotechnology. 1097-1101. DOI: 10.1109/NANO.2011.6144449 |
0.519 |
|
2010 |
Narayanan P, Wang T, Moritz CA. Programmable cellular architectures at the nanoscale Nano Communication Networks. 1: 77-85. DOI: 10.1016/J.Nancom.2010.07.003 |
0.621 |
|
2009 |
Wang T, Narayanan P, Moritz CA. Heterogeneous Two-Level Logic and Its Density and Fault Tolerance Implications in Nanoscale Fabrics Ieee Transactions On Nanotechnology. 8: 22-30. DOI: 10.1109/Tnano.2008.2007645 |
0.419 |
|
2009 |
Dezan C, Teodorov C, Lagadec L, Leuchtenburg M, Wang T, Narayanan P, Moritz A. Towards a framework for designing applications onto hybrid nano/CMOS fabrics Microelectronics Journal. 40: 656-664. DOI: 10.1016/J.Mejo.2008.07.072 |
0.358 |
|
2008 |
Wang T, Narayanan P, Leuchtenburg M, Moritz CA. NASICs: A nanoscale fabric for nanoscale microprocessors 2008 2nd Ieee International Nanoelectronics Conference, Inec 2008. 989-994. DOI: 10.1109/INEC.2008.4585651 |
0.638 |
|
2007 |
Moritz CA, Wang T, Narayanan P, Leuchtenburg M, Guo Y, Dezan C, Bennaser M. Fault-tolerant nanoscale processors on semiconductor nanowire grids Ieee Transactions On Circuits and Systems I: Regular Papers. 54: 2422-2437. DOI: 10.1109/Tcsi.2007.907839 |
0.675 |
|
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