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Yimin Kang, Ph.D. - Publications

Affiliations: 
2003 University of California, San Diego, La Jolla, CA 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Na N, Tseng CK, Kang Y, Lee MCM. Rapid-melt-growth-based GeSi waveguide photodetectors and avalanche photodetectors Proceedings of Spie - the International Society For Optical Engineering. 8990. DOI: 10.1117/12.2038450  0.433
2014 Chen W, Tseng C, Chen K, Liu H, Kang Y, Na N, Lee M. Self-Aligned Microbonded Germanium Metal–Semiconductor–Metal Photodetectors Butt-Coupled to Si Waveguides Ieee Journal of Selected Topics in Quantum Electronics. 20: 17-21. DOI: 10.1109/Jstqe.2013.2296854  0.458
2013 Tseng CK, Chen WT, Chen KH, Liu HD, Kang Y, Na N, Lee MC. A self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnects. Scientific Reports. 3: 3225. PMID 24232956 DOI: 10.1038/Srep03225  0.447
2011 Lu Z, Sun W, Hu C, Holmes A, Campbell JC, Kang Y, Liu H. Ge on Si and InP/InGaAs single photon avalanche diodes Proceedings of Spie. 8155. DOI: 10.1117/12.894533  0.44
2011 Lu Z, Kang Y, Hu C, Zhou Q, Liu H, Campbell JC. Geiger-Mode Operation of Ge-on-Si Avalanche Photodiodes Ieee Journal of Quantum Electronics. 47: 731-735. DOI: 10.1109/Jqe.2011.2110637  0.431
2010 Bowers JE, Dai D, Kang Y, Morse M. High-gain high-sensitivity resonant Ge/Si APD photodetectors Proceedings of Spie. 7660. DOI: 10.1117/12.855030  0.445
2010 Dai D, Rodwell MJW, Bowers JE, Kang Y, Morse M. Derivation of the small signal response and equivalent circuit model for a separate absorption and multiplication layer avalanche photodetector Ieee Journal On Selected Topics in Quantum Electronics. 16: 1328-1336. DOI: 10.1109/Jstqe.2009.2038497  0.313
2010 Bowers JE, Ramaswamy A, Dai D, Zaoui WS, Kang Y, Yin T, Morse M. Recent advances in Ge/Si PIN and APD photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2526-2531. DOI: 10.1002/Pssc.200983875  0.444
2010 Dai D, Chen H, Bowers JE, Kang Y, Morse M, Paniccia MJ. Equivalent circuit model of a waveguide-type Ge/Si avalanche photodetector Physica Status Solidi (C). 7: 2532-2535. DOI: 10.1002/Pssc.200983874  0.423
2009 Dai D, Chen HW, Bowers JE, Kang Y, Morse M, Paniccia MJ. Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes. Optics Express. 17: 16549-57. PMID 19770870 DOI: 10.1364/Oe.17.016549  0.44
2009 Zaoui WS, Chen HW, Bowers JE, Kang Y, Morse M, Paniccia MJ, Pauchard A, Campbell JC. Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product. Optics Express. 17: 12641-9. PMID 19654668 DOI: 10.1364/Oe.17.012641  0.414
2009 Kang Y, Liu H, Morse M, Paniccia MJ, Zadka M, Litski S, Sarid G, Pauchard A, Kuo Y, Chen H, Zaoui WS, Bowers JE, Beling A, McIntosh DC, Zheng X, et al. Epitaxially-grown germanium/silicon avalanche photodiodes for near infrared light detection Proceedings of Spie. 7339: 733906. DOI: 10.1117/12.818917  0.421
2009 Liu H, Pan H, Hu C, McIntosh D, Lu Z, Campbell J, Kang Y, Morse M. Avalanche photodiode punch-through gain determination through excess noise analysis Journal of Applied Physics. 106: 064507. DOI: 10.1063/1.3226659  0.383
2009 Morse M, Dosunmu O, Yin T, Kang Y, Liu HD, Sarid G, Ginsburg E, Cohen R, Litski S, Zadka M. Performance of Ge/Si receivers at 1310 nm Physica E-Low-Dimensional Systems & Nanostructures. 41: 1076-1081. DOI: 10.1016/J.Physe.2008.08.017  0.375
2009 Piels M, Ramaswamy A, Zaoui WS, Bowers JE, Kang Y, Morse M. Microwave nonlinearities in Ge/Si avalanche photodiodes having a gain-bandwidth product of 300 GHz Conference On Optical Fiber Communication, Technical Digest Series.  0.31
2008 Kang Y, Zadka M, Litski S, Sarid G, Morse M, Paniccia MJ, Kuo YH, Bowers J, Beling A, Liu HD, McIntosh DC, Campbell J, Pauchard A. Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection. Optics Express. 16: 9365-71. PMID 18575500 DOI: 10.1364/Oe.16.009365  0.456
2008 Kang Y, Liu H, Morse M, Paniccia MJ, Zadka M, Litski S, Sarid G, Pauchard A, Kuo Y, Chen H, Zaoui WS, Bowers JE, Beling A, McIntosh DC, Zheng X, et al. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product Nature Photonics. 3: 59-63. DOI: 10.1038/Nphoton.2008.247  0.456
2004 Kang Y, Lo Y-, Bitter M, Kristjansson S, Pan Z, Pauchard A. InGaAs-on-Si single photon avalanche photodetectors Applied Physics Letters. 85: 1668-1670. DOI: 10.1063/1.1788882  0.465
2003 Kang Y, Lu HX, Lo Y-, Bethune DS, Risk WP. Dark count probability and quantum efficiency of avalanche photodiodes for single-photon detection Applied Physics Letters. 83: 2955-2957. DOI: 10.1063/1.1616666  0.317
2002 Pan Z, Bitter M, Pauchard A, Hummel S, Feng T, Kang Y, Mages P, Yu PKL, Lo Y. InGaAs/Si avalanche photodiodes fabricated by wafer bonding Proceedings of Spie. 4905: 322-325. DOI: 10.1117/12.481018  0.408
2002 Kang Y, Mages P, Clawson AR, Yu PKL, Bitter M, Pan Z, Pauchard A, Hummel S, Lo YH. Fused InGaAs-Si avalanche photodiodes with low-noise performances Ieee Photonics Technology Letters. 14: 1593-1595. DOI: 10.1109/Lpt.2002.803370  0.383
2001 Kang Y, Mages P, Clawson AR, Lau SS, Lo YH, Yu PKL, Pauchard A, Zhu Z, Zhou Y. Wafer-fused p-i-n InGaAs/Si photodiode with photogain Applied Physics Letters. 79: 970-972. DOI: 10.1063/1.1394171  0.416
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