Year |
Citation |
Score |
2014 |
Na N, Tseng CK, Kang Y, Lee MCM. Rapid-melt-growth-based GeSi waveguide photodetectors and avalanche photodetectors Proceedings of Spie - the International Society For Optical Engineering. 8990. DOI: 10.1117/12.2038450 |
0.433 |
|
2014 |
Chen W, Tseng C, Chen K, Liu H, Kang Y, Na N, Lee M. Self-Aligned Microbonded Germanium Metal–Semiconductor–Metal Photodetectors Butt-Coupled to Si Waveguides Ieee Journal of Selected Topics in Quantum Electronics. 20: 17-21. DOI: 10.1109/Jstqe.2013.2296854 |
0.458 |
|
2013 |
Tseng CK, Chen WT, Chen KH, Liu HD, Kang Y, Na N, Lee MC. A self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnects. Scientific Reports. 3: 3225. PMID 24232956 DOI: 10.1038/Srep03225 |
0.447 |
|
2011 |
Lu Z, Sun W, Hu C, Holmes A, Campbell JC, Kang Y, Liu H. Ge on Si and InP/InGaAs single photon avalanche diodes Proceedings of Spie. 8155. DOI: 10.1117/12.894533 |
0.44 |
|
2011 |
Lu Z, Kang Y, Hu C, Zhou Q, Liu H, Campbell JC. Geiger-Mode Operation of Ge-on-Si Avalanche Photodiodes Ieee Journal of Quantum Electronics. 47: 731-735. DOI: 10.1109/Jqe.2011.2110637 |
0.431 |
|
2010 |
Bowers JE, Dai D, Kang Y, Morse M. High-gain high-sensitivity resonant Ge/Si APD photodetectors Proceedings of Spie. 7660. DOI: 10.1117/12.855030 |
0.445 |
|
2010 |
Dai D, Rodwell MJW, Bowers JE, Kang Y, Morse M. Derivation of the small signal response and equivalent circuit model for a separate absorption and multiplication layer avalanche photodetector Ieee Journal On Selected Topics in Quantum Electronics. 16: 1328-1336. DOI: 10.1109/Jstqe.2009.2038497 |
0.313 |
|
2010 |
Bowers JE, Ramaswamy A, Dai D, Zaoui WS, Kang Y, Yin T, Morse M. Recent advances in Ge/Si PIN and APD photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2526-2531. DOI: 10.1002/Pssc.200983875 |
0.444 |
|
2010 |
Dai D, Chen H, Bowers JE, Kang Y, Morse M, Paniccia MJ. Equivalent circuit model of a waveguide-type Ge/Si avalanche photodetector Physica Status Solidi (C). 7: 2532-2535. DOI: 10.1002/Pssc.200983874 |
0.423 |
|
2009 |
Dai D, Chen HW, Bowers JE, Kang Y, Morse M, Paniccia MJ. Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes. Optics Express. 17: 16549-57. PMID 19770870 DOI: 10.1364/Oe.17.016549 |
0.44 |
|
2009 |
Zaoui WS, Chen HW, Bowers JE, Kang Y, Morse M, Paniccia MJ, Pauchard A, Campbell JC. Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product. Optics Express. 17: 12641-9. PMID 19654668 DOI: 10.1364/Oe.17.012641 |
0.414 |
|
2009 |
Kang Y, Liu H, Morse M, Paniccia MJ, Zadka M, Litski S, Sarid G, Pauchard A, Kuo Y, Chen H, Zaoui WS, Bowers JE, Beling A, McIntosh DC, Zheng X, et al. Epitaxially-grown germanium/silicon avalanche photodiodes for near infrared light detection Proceedings of Spie. 7339: 733906. DOI: 10.1117/12.818917 |
0.421 |
|
2009 |
Liu H, Pan H, Hu C, McIntosh D, Lu Z, Campbell J, Kang Y, Morse M. Avalanche photodiode punch-through gain determination through excess noise analysis Journal of Applied Physics. 106: 064507. DOI: 10.1063/1.3226659 |
0.383 |
|
2009 |
Morse M, Dosunmu O, Yin T, Kang Y, Liu HD, Sarid G, Ginsburg E, Cohen R, Litski S, Zadka M. Performance of Ge/Si receivers at 1310 nm Physica E-Low-Dimensional Systems & Nanostructures. 41: 1076-1081. DOI: 10.1016/J.Physe.2008.08.017 |
0.375 |
|
2009 |
Piels M, Ramaswamy A, Zaoui WS, Bowers JE, Kang Y, Morse M. Microwave nonlinearities in Ge/Si avalanche photodiodes having a gain-bandwidth product of 300 GHz Conference On Optical Fiber Communication, Technical Digest Series. |
0.31 |
|
2008 |
Kang Y, Zadka M, Litski S, Sarid G, Morse M, Paniccia MJ, Kuo YH, Bowers J, Beling A, Liu HD, McIntosh DC, Campbell J, Pauchard A. Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection. Optics Express. 16: 9365-71. PMID 18575500 DOI: 10.1364/Oe.16.009365 |
0.456 |
|
2008 |
Kang Y, Liu H, Morse M, Paniccia MJ, Zadka M, Litski S, Sarid G, Pauchard A, Kuo Y, Chen H, Zaoui WS, Bowers JE, Beling A, McIntosh DC, Zheng X, et al. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product Nature Photonics. 3: 59-63. DOI: 10.1038/Nphoton.2008.247 |
0.456 |
|
2004 |
Kang Y, Lo Y-, Bitter M, Kristjansson S, Pan Z, Pauchard A. InGaAs-on-Si single photon avalanche photodetectors Applied Physics Letters. 85: 1668-1670. DOI: 10.1063/1.1788882 |
0.465 |
|
2003 |
Kang Y, Lu HX, Lo Y-, Bethune DS, Risk WP. Dark count probability and quantum efficiency of avalanche photodiodes for single-photon detection Applied Physics Letters. 83: 2955-2957. DOI: 10.1063/1.1616666 |
0.317 |
|
2002 |
Pan Z, Bitter M, Pauchard A, Hummel S, Feng T, Kang Y, Mages P, Yu PKL, Lo Y. InGaAs/Si avalanche photodiodes fabricated by wafer bonding Proceedings of Spie. 4905: 322-325. DOI: 10.1117/12.481018 |
0.408 |
|
2002 |
Kang Y, Mages P, Clawson AR, Yu PKL, Bitter M, Pan Z, Pauchard A, Hummel S, Lo YH. Fused InGaAs-Si avalanche photodiodes with low-noise performances Ieee Photonics Technology Letters. 14: 1593-1595. DOI: 10.1109/Lpt.2002.803370 |
0.383 |
|
2001 |
Kang Y, Mages P, Clawson AR, Lau SS, Lo YH, Yu PKL, Pauchard A, Zhu Z, Zhou Y. Wafer-fused p-i-n InGaAs/Si photodiode with photogain Applied Physics Letters. 79: 970-972. DOI: 10.1063/1.1394171 |
0.416 |
|
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