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Jutao Jiang, Ph.D. - Publications

Affiliations: 
2004 Northwestern University, Evanston, IL 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, General Physics
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Pralle MU, Vineis C, Palsule C, Jiang J, Carey JE. Extending black silicon imaging to backside illumination Proceedings of Spie. 9819: 981904. DOI: 10.1117/12.2223063  0.343
2015 Pralle MU, Carey JE, Vineis C, Palsule C, Jiang J, Joy T. IR CMOS: The digital nightvision solution to sub-1 mLux imaging Proceedings of Spie - the International Society For Optical Engineering. 9451. DOI: 10.1117/12.2177006  0.314
2013 Pralle MU, Carey JE, Homayoon H, Sickler J, Li X, Jiang J, Sahebi F, Palsule C, McKee J. Infrared enhanced detection for laser imaging and biometrics Proceedings of Spie - the International Society For Optical Engineering. 8734. DOI: 10.1117/12.2020291  0.306
2013 Pralle MU, Carey JE, Homayoon H, Vineis C, Sickler J, Li X, Jiang J, Sahebi F, Palsule C, McKee J. IR CMOS: Infrared enhanced silicon imaging Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2015959  0.313
2012 Pralle MU, Carey JE, Homayoon H, Sickler J, Li X, Jiang J, Hong C, Sahebi F, Palsule C, McKee J. IR CMOS: Ultrafast laser-enhanced silicon imaging Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919530  0.334
2011 Pralle MU, Carey JE, Homayoon H, Sickler J, Li X, Jiang J, Miller D, Palsule C, Mckee. J. IR CMOS: Ultrafast laser-enhanced silicon detection Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.882867  0.352
2010 Pralle MU, Carey JE, Homayoon H, Alie S, Sickler J, Li X, Jiang J, Miller D, Palsule C, McKee J. Black silicon enhanced photodetectors: A path to IR CMOS Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.849683  0.349
2005 Jiang J, Tsao S, Mi K, Razeghi M, Brown GJ, Jelen C, Tidrow MZ. Advanced monolithic quantum well infrared photodetector focal plane array integrated with silicon readout integrated circuit Infrared Physics & Technology. 46: 199-207. DOI: 10.1016/J.Infrared.2004.02.002  0.638
2004 Jiang J, Tsao S, O'Sullivan T, Zhang W, Lim H, Sills T, Mi K, Razeghi M, Brown GJ, Tidrow MZ. High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition Applied Physics Letters. 84: 2166-2168. DOI: 10.1063/1.1688982  0.657
2004 Jiang J, Mi K, Tsao S, Zhang W, Lim H, O'Sullivan T, Sills T, Razeghi M, Brown GJ, Tidrow MZ. Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors Applied Physics Letters. 84: 2232-2234. DOI: 10.1063/1.1688000  0.664
2004 Jiang J, Tsao S, O’Sullivan T, Razeghi M, Brown GJ. Fabrication of indium bumps for hybrid infrared focal plane array applications Infrared Physics & Technology. 45: 143-151. DOI: 10.1016/J.Infrared.2003.08.002  0.615
2003 Jiang J, Mi K, McClintock R, Razeghi M, Brown GJ, Jelen C. Demonstration of 256 × 256 focal plane array based on Al-free GaInAs-InP QWIP Ieee Photonics Technology Letters. 15: 1273-1275. DOI: 10.1109/Lpt.2003.816667  0.637
2002 Jiang J, Jelen C, Razeghi M, Brown GJ. High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates Ieee Photonics Technology Letters. 14: 372-374. DOI: 10.1109/68.986817  0.498
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