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Zhibin Ren, Ph.D. - Publications

Affiliations: 
2001 Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Majumdar A, Ren Z, Koester SJ, Haensch W. Undoped-body extremely thin SOI MOSFETs with back gates Ieee Transactions On Electron Devices. 56: 2270-2276. DOI: 10.1109/Ted.2009.2028057  0.41
2008 Majumdar A, Ren Z, Sleight JW, Dobuzinsky D, Holt JR, Venigalla R, Koester SJ, Haensch W. High-performance undoped-body 8-nm-thin SOI field-effect transistors Ieee Electron Device Letters. 29: 515-517. DOI: 10.1109/Led.2008.920975  0.362
2006 Nayfeh HM, Singh DV, Hergenrother JM, Sleight JW, Ren Z, Dokumaci O, Black L, Chidambarrao D, Venigalla R, Pan J, Natzle W, Tessier BL, Ott JA, Khare M, Guarini KW, et al. Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs Ieee Electron Device Letters. 27: 288-290. DOI: 10.1109/Led.2006.871542  0.376
2006 Singh DV, Jenkins KA, Sleight J, Ren Z, Ieong M, Haensch W. Strained ultrahigh performance fully depleted nMOSFETs with ft of 330 GHz and sub-30-nm gate lengths Ieee Electron Device Letters. 27: 191-193. DOI: 10.1109/Led.2006.870254  0.305
2003 Venugopal R, Ren Z, Lundstrom MS. Simulating quantum transport in nanoscale MOSFETs: ballistic hole transport, subband engineering and boundary conditions Ieee Transactions On Nanotechnology. 2: 135-143. DOI: 10.1109/Tnano.2003.817229  0.657
2003 Ren Z, Venugopal R, Goasguen S, Datta S, Lundstrom MS. nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs Ieee Transactions On Electron Devices. 50: 1914-1925. DOI: 10.1109/Ted.2003.816524  0.667
2002 Ren Z, Hegde S, Doris B, Oldiges P, Kanarsky T, Dokumaci O, Roy R, Leong M, Jones EC, Wong H-P. An experimental study on transport issues and electrostatics of ultrathin body SOI pMOSFETs Ieee Electron Device Letters. 23: 609-611. DOI: 10.1109/Led.2002.803757  0.365
2002 Venugopal R, Ren Z, Datta S, Lundstrom MS, Jovanovic D. Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches Journal of Applied Physics. 92: 3730-3739. DOI: 10.1063/1.1503165  0.673
2002 Guo J, Ren Z, Lundstrom M. Journal of Computational Electronics. 1: 185-189. DOI: 10.1023/A:1020717322718  0.604
2002 Rhew J, Ren Z, Lundstrom MS. Benchmarking Macroscopic Transport Models for Nanotransistor TCAD Journal of Computational Electronics. 1: 385-388. DOI: 10.1023/A:1020712010848  0.662
2002 Rhew JH, Ren Z, Lundstrom MS. A numerical study of ballistic transport in a nanoscale MOSFET Solid-State Electronics. 46: 1899-1906. DOI: 10.1016/S0038-1101(02)00130-2  0.671
2000 Assad F, Ren Z, Vasileska D, Datta S, Lundstrom M. On the performance limits for Si MOSFETs: a theoretical study Ieee Transactions On Electron Devices. 47: 232-240. DOI: 10.1109/16.817590  0.375
2000 Fossum JG, Ren Z, Kim K, Lundstrom M. Extraordinarily high drive currents in asymmetrical double-gate MOSFETs Superlattices and Microstructures. 28: 525-530. DOI: 10.1006/Spmi.2000.0957  0.571
2000 Ren Z, Lundstrom M. Simulation of nanoscale MOSFETs: A scattering theory interpretation Superlattices and Microstructures. 27: 177-189. DOI: 10.1006/Spmi.1999.0798  0.597
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