Year |
Citation |
Score |
2017 |
Draguta S, Sharia O, Yoon SJ, Brennan MC, Morozov YV, Manser JM, Kamat PV, Schneider WF, Kuno M. Rationalizing the light-induced phase separation of mixed halide organic-inorganic perovskites. Nature Communications. 8: 200. PMID 28779144 DOI: 10.1038/S41467-017-00284-2 |
0.316 |
|
2017 |
Kuklja MM, Sharia O, Tsyshevsky R. Manifestations of two-dimensional electron gas in molecular crystals Surface Science. 657: 20-27. DOI: 10.1016/J.Susc.2016.11.001 |
0.368 |
|
2016 |
Tsyshevsky RV, Sharia O, Kuklja MM. Molecular Theory of Detonation Initiation: Insight from First Principles Modeling of the Decomposition Mechanisms of Organic Nitro Energetic Materials. Molecules (Basel, Switzerland). 21. PMID 26907231 DOI: 10.3390/Molecules21020236 |
0.36 |
|
2014 |
Kuklja MM, Tsyshevsky RV, Sharia O. Effect of polar surfaces on decomposition of molecular materials. Journal of the American Chemical Society. 136: 13289-302. PMID 25170566 DOI: 10.1021/Ja506297E |
0.312 |
|
2014 |
Tsyshevsky RV, Sharia O, Kuklja MM. Optical absorption energies of molecular defects in pentaerythritol tetranitrate crystals: Quantum chemical modeling Journal of Physical Chemistry C. 118: 26530-26542. DOI: 10.1021/Jp508271K |
0.323 |
|
2014 |
Tsyshevsky RV, Sharia O, Kuklja MM. Energies of electronic transitions of pentaerythritol tetranitrate molecules and crystals Journal of Physical Chemistry C. 118: 9324-9335. DOI: 10.1021/Jp500011A |
0.376 |
|
2014 |
Kuklja MM, Kotomin EA, Sharia O, Mastrikov YA, Maier J. Radiation defects in complex perovskite solid solutions Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 326: 243-246. DOI: 10.1016/J.Nimb.2013.08.068 |
0.311 |
|
2013 |
Sharia O, Tsyshevsky R, Kuklja MM. Surface-Accelerated Decomposition of δ-HMX. The Journal of Physical Chemistry Letters. 4: 730-4. PMID 26281926 DOI: 10.1021/Jz302166P |
0.305 |
|
2013 |
Tsyshevsky RV, Sharia O, Kuklja MM. Thermal decomposition mechanisms of nitroesters: Ab initio modeling of pentaerythritol tetranitrate Journal of Physical Chemistry C. 117: 18144-18153. DOI: 10.1021/Jp407754Q |
0.375 |
|
2012 |
Sharia O, Kuklja MM. Rapid materials degradation induced by surfaces and voids: ab initio modeling of β-octatetramethylene [corrected] tetranitramine. Journal of the American Chemical Society. 134: 11815-20. PMID 22703290 DOI: 10.1021/Ja3044695 |
0.359 |
|
2012 |
Sharia O, Kuklja MM. Surface-enhanced decomposition kinetics of molecular materials illustrated with cyclotetramethylene-tetranitramine Journal of Physical Chemistry C. 116: 11077-11081. DOI: 10.1021/Jp301723J |
0.362 |
|
2012 |
Sharia O, Kuklja MM. Correction to Rapid Materials Degradation Induced by Surfaces and Voids: Ab Initio Modeling of β-Octatetramethylene Tetranitramine Journal of the American Chemical Society. 134: 13532-13532. DOI: 10.1021/Ja307906S |
0.301 |
|
2011 |
Sharia O, Kuklja MM. Modeling thermal decomposition mechanisms in gaseous and crystalline molecular materials: application to β-HMX. The Journal of Physical Chemistry. B. 115: 12677-86. PMID 21942331 DOI: 10.1021/Jp202733D |
0.361 |
|
2010 |
Ehlert R, Kwon J, Loumakos L, Sharia O, Demkov AA, Downer MC. Optical second-harmonic and reflectance-anisotropy spectroscopy of clean and hydrogen-terminated vicinal Si(001) surfaces Journal of the Optical Society of America B: Optical Physics. 27: 981-989. DOI: 10.1364/Josab.27.000981 |
0.484 |
|
2010 |
Bersuker G, Park CS, Wen HC, Choi K, Price J, Lysaght P, Tseng HH, Sharia O, Demkov A, Ryan JT, Lenahan P. Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks Ieee Transactions On Electron Devices. 57: 2047-2056. DOI: 10.1109/Ted.2010.2051863 |
0.575 |
|
2010 |
Demkov AA, Luo X, Sharia O. Theory of HfO2-based high-k dielectric gate stacks Fundamentals of Iii-V Semiconductor Mosfets. 51-91. DOI: 10.1007/978-1-4419-1547-4_4 |
0.572 |
|
2009 |
Luo X, Demkov AA, Sharia O, Bersuker G. Hafnia surface and high-k gate stacks Materials Research Society Symposium Proceedings. 1155: 71-77. DOI: 10.1557/Proc-1155-C11-02 |
0.602 |
|
2009 |
Sharia O, Tse K, Robertson J, Demkov AA. Extended Frenkel pairs and band alignment at metal-oxide interfaces Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.125305 |
0.555 |
|
2009 |
Demkov AA, Sharia O, Luo X, Bersuker G, Robertson J. Modeling complexity of a complex gate oxide Microelectronic Engineering. 86: 1763-1766. DOI: 10.1016/J.Mee.2009.03.116 |
0.584 |
|
2008 |
Bersuker G, Park CS, Wen HC, Choi K, Sharia O, Demkov A. Origin of the flat-band voltage (Vfb) roll-off phenomenon in metal/high-k gate stacks Essderc 2008 - Proceedings of the 38th European Solid-State Device Research Conference. 134-137. DOI: 10.1109/ESSDERC.2008.4681717 |
0.326 |
|
2008 |
Sharia O, Demkov AA, Bersuker G, Lee BH. Effects of aluminum incorporation on band alignment at the Si O2 Hf O2 interface Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.085326 |
0.557 |
|
2007 |
Sharia O, Demkov AA, Bersuker G, Lee BH. Theoretical study of the insulator/insulator interface: Band alignment at the Si O2 Hf O2 junction Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.035306 |
0.584 |
|
2007 |
Robertson J, Sharia O, Demkov AA. Fermi level pinning by defects in Hf O2 -metal gate stacks Applied Physics Letters. 91. DOI: 10.1063/1.2790479 |
0.573 |
|
2007 |
Demkov AA, Sharia O, Lee JK. Theoretical analysis of high-k dielectric gate stacks Microelectronic Engineering. 84: 2032-2034. DOI: 10.1016/J.Mee.2007.04.081 |
0.552 |
|
2007 |
Demkov AA, Sharia O, Luo X, Lee J. Density functional theory of high-k dielectric gate stacks Microelectronics Reliability. 47: 686-693. DOI: 10.1007/978-0-387-76499-3_7 |
0.549 |
|
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