| Year |
Citation |
Score |
| 2020 |
Subedi RC, Min JW, Mitra S, Li KH, Ajia I, Stegenburgs E, Anjum DH, Conroy M, Moore K, Bangert U, Roqan IS, Ng TK, Ooi BS. Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization. Acs Applied Materials & Interfaces. PMID 32869977 DOI: 10.1021/Acsami.0C03259 |
0.435 |
|
| 2020 |
Holguin-Lerma JA, Kong M, Alkhazragi O, Sun X, Khee Ng T, Ooi BS. 480-nm distributed-feedback InGaN laser diode for 10.5-Gbit/s visible-light communication. Optics Letters. 45: 742-745. PMID 32004299 DOI: 10.1364/Ol.385954 |
0.393 |
|
| 2020 |
Prabaswara A, Kim H, Min JW, Subedi RC, Anjum DH, Davaasuren B, Moore K, Conroy M, Mitra S, Roqan IS, Ng TK, Alshareef HN, Ooi BS. Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates. Acs Nano. PMID 31986010 DOI: 10.1021/Acsnano.9B09126 |
0.312 |
|
| 2020 |
Rossbach S, Subedi RC, Ng TK, Ooi BS, Duarte CM. Iridocytes Mediate Photonic Cooperation Between Giant Clams (Tridacninae) and Their Photosynthetic Symbionts Frontiers in Marine Science. 7. DOI: 10.3389/Fmars.2020.00465 |
0.307 |
|
| 2020 |
Khan MZM, Mukhtar S, Holguín-Lerma JA, Alkhazragi O, Ashry I, Ng TK, Ooi BS. Prism-based tunable InGaN/GaN self-injection locked blue laser diode system: study of temperature, injection ratio, and stability Journal of Nanophotonics. 14: 36001. DOI: 10.1117/1.Jnp.14.036001 |
0.378 |
|
| 2020 |
Shihada B, Amin O, Bainbridge C, Jardak S, Alkhazragi O, Ng TK, Ooi B, Berumen M, Alouini M. Aqua-Fi: Delivering Internet Underwater Using Wireless Optical Networks Ieee Communications Magazine. 58: 84-89. DOI: 10.1109/Mcom.001.2000009 |
0.316 |
|
| 2020 |
Alkhazragi O, Kang CH, Kong M, Liu G, Lee C, Li K, Zhang H, Wagstaff JM, Alhawaj F, Ng TK, Speck JS, Nakamura S, DenBaars SP, Ooi BS. 7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector Ieee Photonics Technology Letters. 1-1. DOI: 10.1109/Lpt.2020.2995110 |
0.356 |
|
| 2020 |
Mukhtar S, Xiaobin S, Ashry I, Ng TK, Ooi BS, Khan MZM. Tunable Violet Laser Diode System for Optical Wireless Communication Ieee Photonics Technology Letters. 32: 546-549. DOI: 10.1109/Lpt.2020.2983548 |
0.389 |
|
| 2020 |
Sweeney SJ, Fan W, Ooi BS, Zhang DH. Virtual Special Issue Dedicated to the 10th International Conference on Materials for Advanced Technologies (ICMAT), Symposium C: Semiconductor Photonics Ieee Journal of Quantum Electronics. 56: 1-3. DOI: 10.1109/Jqe.2020.2970239 |
0.318 |
|
| 2020 |
Mukhtar S, Ashry I, Shen C, Ng TK, Ooi BS, Khan MZM. Blue Laser Diode System With an Enhanced Wavelength Tuning Range Ieee Photonics Journal. 12: 1-10. DOI: 10.1109/Jphot.2020.2983448 |
0.412 |
|
| 2020 |
Liang J, Li K, Kang CH, Braic L, Kiss AE, Zoita NC, Ng TK, Ooi BS. Characterization of epitaxial titanium nitride mediated single-crystal nickel oxide grown on MgO-(100) and Si-(100) Aip Advances. 10: 65318. DOI: 10.1063/5.0012362 |
0.311 |
|
| 2020 |
Lin C, Li T, Zhang J, Chiao Z, Wei P, Fu H, Hu L, Yu M, Ahmed GH, Guan X, Ho C, Wu T, Ooi BS, Mohammed OF, Lu Y, et al. Designed growth and patterning of perovskite nanowires for lasing and wide color gamut phosphors with long-term stability Nano Energy. 73: 104801. DOI: 10.1016/J.Nanoen.2020.104801 |
0.371 |
|
| 2020 |
Park K, Min J, Subedi RC, Shakfa MK, Davaasuren B, Ng TK, Ooi BS, Kang C, Kim J. THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates Applied Surface Science. 522: 146422. DOI: 10.1016/J.Apsusc.2020.146422 |
0.302 |
|
| 2019 |
Kong M, Lin J, Kang CH, Shen C, Guo Y, Sun X, Sait M, Weng Y, Zhang H, Ng TK, Ooi BS. Toward self-powered and reliable visible light communication using amorphous silicon thin-film solar cells. Optics Express. 27: 34542-34551. PMID 31878642 DOI: 10.1364/Oe.27.034542 |
0.326 |
|
| 2019 |
Kang CH, Trichili A, Alkhazragi O, Zhang H, Subedi RC, Guo Y, Mitra S, Shen C, Roqan IS, Ng TK, Alouini MS, Ooi BS. Ultraviolet-to-blue color-converting scintillating-fibers photoreceiver for 375-nm laser-based underwater wireless optical communication. Optics Express. 27: 30450-30461. PMID 31684293 DOI: 10.1364/Oe.27.030450 |
0.345 |
|
| 2019 |
Kang CH, Dursun I, Liu G, Sinatra L, Sun X, Kong M, Pan J, Maity P, Ooi EN, Ng TK, Mohammed OF, Bakr OM, Ooi BS. High-speed colour-converting photodetector with all-inorganic CsPbBr perovskite nanocrystals for ultraviolet light communication. Light, Science & Applications. 8: 94. PMID 31645937 DOI: 10.1038/S41377-019-0204-4 |
0.387 |
|
| 2019 |
Li KH, Alfaraj N, Kang CH, Braic L, Hedhili MN, Guo Z, Ng TK, Ooi BS. Deep-Ultraviolet Photodetection Using Single-Crystalline β-Ga2O3/NiO Heterojunctions. Acs Applied Materials & Interfaces. PMID 31462042 DOI: 10.1021/Acsami.9B10626 |
0.328 |
|
| 2019 |
Alwadai N, Ajia IA, Janjua B, Flemban TH, Mitra S, Wehbe N, Wei N, Lopatin S, Ooi BS, Roqan IS. Catalyst-Free Vertical ZnO-Nanotube Array Grown on p-GaN for UV-Light-Emitting Devices. Acs Applied Materials & Interfaces. PMID 31343859 DOI: 10.1021/Acsami.9B06195 |
0.409 |
|
| 2019 |
Lee KJ, Turedi B, Sinatra L, Zhumekenov AA, Maity P, Dursun I, Naphade R, Merdad N, Alsalloum A, Oh S, Wehbe N, Hedhili MN, Kang CH, Subedi RC, Cho N, ... ... Ooi BS, et al. Perovskite-Based Artificial Multiple Quantum Wells. Nano Letters. PMID 31009227 DOI: 10.1021/Acs.Nanolett.9B00384 |
0.445 |
|
| 2019 |
Zhang H, Ebaid M, Tan J, Liu G, Min JW, Ng TK, Ooi BS. Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions. Optics Express. 27: A81-A91. PMID 30876005 DOI: 10.1364/Oe.27.000A81 |
0.3 |
|
| 2019 |
Prabaswara A, Min JW, Subedi RC, Tangi M, Holguin-Lerma JA, Zhao C, Priante D, Ng TK, Ooi BS. Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica. Nanoscale Research Letters. 14: 45. PMID 30721361 DOI: 10.1186/S11671-019-2870-9 |
0.344 |
|
| 2019 |
Holguín-Lerma JA, Ng TK, Ooi BS. Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating Applied Physics Express. 12: 42007. DOI: 10.7567/1882-0786/Ab0A57 |
0.401 |
|
| 2019 |
Sait M, Sun X, Alkhazragi O, Alfaraj N, Kong M, Ng TK, Ooi BS. The effect of turbulence on NLOS underwater wireless optical communication channels [Invited] Chinese Optics Letters. 17: 100013. DOI: 10.3788/Col201917.100013 |
0.301 |
|
| 2019 |
Guo Y, Alkhazragi O, Kang CH, Shen C, Mao Y, Sun X, Ng TK, Ooi BS. A tutorial on laser-based lighting and visible light communications: device and technology [Invited] Chinese Optics Letters. 17: 40601. DOI: 10.3788/Col201917.040601 |
0.382 |
|
| 2019 |
Priante D, Tangi M, Min J, Alfaraj N, Liang JW, Sun H, Alhashim HH, Li X, Albadri AM, Alyamani AY, Ng TK, Ooi BS. Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes Optical Materials Express. 9: 203-215. DOI: 10.1364/Ome.9.000203 |
0.333 |
|
| 2019 |
Stegenburgs E, Bertoncini A, Trichili A, Alias MS, Ng TK, Alouini M, Liberale C, Ooi BS. Near-Infrared OAM Communication Using 3D-Printed Microscale Spiral Phase Plates Ieee Communications Magazine. 57: 65-69. DOI: 10.1109/Mcom.2019.1800902 |
0.318 |
|
| 2019 |
Shamim HM, Ng TK, Ooi BS, Khan MZM. Single and Multiple Longitudinal Wavelength Generation in Green Diode Lasers Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-7. DOI: 10.1109/Jstqe.2019.2916870 |
0.396 |
|
| 2019 |
Shen C, Holguin-Lerma JA, Alatawi AA, Zou P, Chi N, Ng TK, Ooi BS. Group-III-Nitride Superluminescent Diodes for Solid-State Lighting and High-Speed Visible Light Communications Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-10. DOI: 10.1109/Jstqe.2019.2915995 |
0.335 |
|
| 2019 |
Shamim HM, Alkhazragi O, Ng TK, Ooi BS, Khan MZM. Tunable Dual-Wavelength Self-injection Locked InGaN/GaN Green Laser Diode Ieee Access. 7: 143324-143330. DOI: 10.1109/Access.2019.2944693 |
0.367 |
|
| 2019 |
Alfaraj N, Min J, Kang CH, Alatawi AA, Priante D, Subedi RC, Tangi M, Ng TK, Ooi BS. Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials Journal of Semiconductors. 40: 121801. DOI: 10.1088/1674-4926/40/12/121801 |
0.321 |
|
| 2019 |
Shamim MHM, Shemis MA, Shen C, Oubei HM, Alkhazragi O, Ng TK, Ooi BS, Khan MZM. Analysis of optical injection on red and blue laser diodes for high bit-rate visible light communication Optics Communications. 449: 79-85. DOI: 10.1016/J.Optcom.2019.05.034 |
0.414 |
|
| 2019 |
Sun H, Mitra S, Subedi RC, Zhang Y, Guo W, Ye J, Shakfa MK, Ng TK, Ooi BS, Roqan IS, Zhang Z, Dai J, Chen C, Long S. Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate Advanced Functional Materials. 29: 1905445. DOI: 10.1002/Adfm.201905445 |
0.403 |
|
| 2018 |
Alatawi AA, Holguin-Lerma JA, Kang CH, Shen C, Subedi RC, Albadri AM, Alyamani AY, Ng TK, Ooi BS. High-power blue superluminescent diode for high CRI lighting and high-speed visible light communication. Optics Express. 26: 26355-26364. PMID 30469724 DOI: 10.1364/Oe.26.026355 |
0.361 |
|
| 2018 |
Shamim MHM, Ng TK, Ooi BS, Khan MZM. Tunable self-injection locked green laser diode. Optics Letters. 43: 4931-4934. PMID 30320786 DOI: 10.1364/Ol.43.004931 |
0.409 |
|
| 2018 |
ElAfandy RT, Ebaid M, Min JW, Zhao C, Ng TK, Ooi BS. Flexible InGaN nanowire membranes for enhanced solar water splitting. Optics Express. 26: A640-A650. PMID 30114053 DOI: 10.1364/Oe.26.00A640 |
0.33 |
|
| 2018 |
Zhao C, Ebaid M, Zhang H, Priante D, Janjua B, Zhang D, Wei N, Alhamoud AA, Shakfa MK, Ng TK, Ooi BS. Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters. Nanoscale. PMID 29897082 DOI: 10.1039/C8Nr02615G |
0.364 |
|
| 2018 |
Sun X, Cai W, Alkhazragi O, Ooi EN, He H, Chaaban A, Shen C, Oubei HM, Khan MZM, Ng TK, Alouini MS, Ooi BS. 375-nm ultraviolet-laser based non-line-of-sight underwater optical communication. Optics Express. 26: 12870-12877. PMID 29801320 DOI: 10.1364/Oe.26.012870 |
0.347 |
|
| 2018 |
Alheadary WG, Park KH, Alfaraj N, Guo Y, Stegenburgs E, Ng TK, Ooi BS, Alouini MS. Free-space optical channel characterization and experimental validation in a coastal environment. Optics Express. 26: 6614-6628. PMID 29609349 DOI: 10.1364/Oe.26.006614 |
0.333 |
|
| 2018 |
Shen C, Ng TK, Lee C, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications. Optics Express. 26: A219-A226. PMID 29609284 DOI: 10.1364/Oe.26.00A219 |
0.439 |
|
| 2018 |
Prabaswara A, Min JW, Zhao C, Janjua B, Zhang D, Albadri AM, Alyamani AY, Ng TK, Ooi BS. Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer. Nanoscale Research Letters. 13: 41. PMID 29411164 DOI: 10.1186/S11671-018-2453-1 |
0.396 |
|
| 2018 |
Ho KT, Chen R, Liu G, Shen C, Holguin-Lerma J, Al-Saggaf AA, Ng TK, Alouini MS, He JH, Ooi BS. 3.2 Gigabit-per-second Visible Light Communication Link with InGaN/GaN MQW Micro-photodetector. Optics Express. 26: 3037-3045. PMID 29401836 DOI: 10.1364/Oe.26.003037 |
0.38 |
|
| 2018 |
Kusch G, Conroy M, Li H, Edwards PR, Zhao C, Ooi BS, Pugh J, Cryan MJ, Parbrook PJ, Martin RW. Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging. Scientific Reports. 8: 1742. PMID 29379097 DOI: 10.1038/S41598-018-20142-5 |
0.373 |
|
| 2018 |
Lin R, Galan SV, Sun H, Hu Y, Alias MS, Janjua B, Ng TK, Ooi BS, Li X. Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations Photonics Research. 6: 457-462. DOI: 10.1364/Prj.6.000457 |
0.337 |
|
| 2018 |
Alias MS, Tangi M, Holguín-Lerma JA, Stegenburgs E, Alatawi AA, Ashry I, Subedi RC, Priante D, Shakfa MK, Ng TK, Ooi BS. Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices Journal of Nanophotonics. 12: 43508. DOI: 10.1117/1.Jnp.12.043508 |
0.361 |
|
| 2018 |
Shamim HM, Shemis MA, Shen C, Oubei HM, Ng TK, Ooi BS, Khan MZM. Investigation of Self-Injection Locked Visible Laser Diodes for High Bit-Rate Visible Light Communication Ieee Photonics Journal. 10: 1-11. DOI: 10.1109/Jphot.2018.2849884 |
0.412 |
|
| 2018 |
Janjua B, Priante D, Prabaswara A, Alanazi L, Zhao C, Alhamoud AA, Alias MS, Albadri AM, Alyamani AY, Ng TK, Ooi BS. Ultraviolet-A LED Based on Quantum-Disks-In-AlGaN-Nanowires—Optimization and Device Reliability Ieee Photonics Journal. 10: 1-11. DOI: 10.1109/Jphot.2018.2814482 |
0.405 |
|
| 2018 |
Alias MS, Alatawi AA, Chong WK, Tangi M, Holguin-Lerma JA, Stegenburgs E, Shakfa MK, Ng TK, Albadri AM, Alyamani AY, Ooi BS. High Reflectivity YDH/SiO2 Distributed Bragg Reflector for UV-C Wavelength Regime Ieee Photonics Journal. 10: 1-1. DOI: 10.1109/Jphot.2018.2804355 |
0.397 |
|
| 2018 |
Zhang H, Ebaid M, Min J, Ng TK, Ooi BS. Enhanced photoelectrochemical performance of InGaN-based nanowire photoanodes by optimizing the ionized dopant concentration Journal of Applied Physics. 124: 83105. DOI: 10.1063/1.5031067 |
0.301 |
|
| 2018 |
Priante D, Elafandy RT, Prabaswara A, Janjua B, Zhao C, Alias MS, Tangi M, Alaskar Y, Albadri AM, Alyamani AY, Ng TK, Ooi BS. Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires Journal of Applied Physics. 124: 15702. DOI: 10.1063/1.5026650 |
0.306 |
|
| 2018 |
Tangi M, Mishra P, Janjua B, Prabaswara A, Zhao C, Priante D, Min J, Ng TK, Ooi BS. Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes Journal of Applied Physics. 123: 105702. DOI: 10.1063/1.5021290 |
0.4 |
|
| 2018 |
Sun H, Priante D, Min J, Subedi RC, Shakfa MK, Ren Z, Li K, Lin R, Zhao C, Ng TK, Ryou J, Zhang X, Ooi BS, Li X. Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation Acs Photonics. 5: 3305-3314. DOI: 10.1021/Acsphotonics.8B00538 |
0.385 |
|
| 2018 |
Zhao C, Alfaraj N, Subedi RC, Liang JW, Alatawi AA, Alhamoud AA, Ebaid M, Alias MS, Ng TK, Ooi BS. III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications Progress in Quantum Electronics. 61: 1-31. DOI: 10.1016/J.Pquantelec.2018.07.001 |
0.369 |
|
| 2018 |
Tangi M, Min J, Priante D, Subedi RC, Anjum DH, Prabaswara A, Alfaraj N, Liang JW, Shakfa MK, Ng TK, Ooi BS. Observation of piezotronic and piezo-phototronic effects in n-InGaN nanowires/Ti grown by molecular beam epitaxy Nano Energy. 54: 264-271. DOI: 10.1016/J.Nanoen.2018.10.031 |
0.363 |
|
| 2017 |
Hanna AN, Kutbee AT, Subedi RC, Ooi B, Hussain MM. Wavy Architecture Thin-Film Transistor for Ultrahigh Resolution Flexible Displays. Small (Weinheim An Der Bergstrasse, Germany). PMID 29131498 DOI: 10.1002/Smll.201703200 |
0.305 |
|
| 2017 |
Sun X, Zhang Z, Chaaban A, Ng TK, Shen C, Chen R, Yan J, Sun H, Li X, Wang J, Li J, Alouini MS, Ooi BS. 71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation. Optics Express. 25: 23267-23274. PMID 29041627 DOI: 10.1364/Oe.25.023267 |
0.326 |
|
| 2017 |
Alias MS, Liu Z, Al-Atawi A, Ng TK, Wu T, Ooi BS. Continuous-wave optically pumped green perovskite vertical-cavity surface-emitter. Optics Letters. 42: 3618-3621. PMID 28914916 DOI: 10.1364/Ol.42.003618 |
0.368 |
|
| 2017 |
Lee C, Shen C, Cozzan C, Farrell RM, Speck JS, Nakamura S, Ooi BS, DenBaars SP. Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors. Optics Express. 25: 17480-17487. PMID 28789239 DOI: 10.1364/Oe.25.017480 |
0.395 |
|
| 2017 |
Janjua B, Sun H, Zhao C, Anjum DH, Wu F, Alhamoud AA, Li X, Albadri AM, Alyamani AY, El-Desouki MM, Ng TK, Ooi BS. Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy. Nanoscale. PMID 28290591 DOI: 10.1039/C7Nr00006E |
0.43 |
|
| 2017 |
Tangi M, Mishra P, Tseng CC, Ng TK, Hedhili MN, Anjum DH, Alias MS, Wei N, Li LJ, Ooi BS. Band alignment at GaN/single-layer WSe2 interface. Acs Applied Materials & Interfaces. PMID 28222259 DOI: 10.1021/Acsami.6B15370 |
0.308 |
|
| 2017 |
Varadhan P, Fu HC, Priante D, Retamal JR, Zhao C, Ebaid M, Ng TK, Ajia IA, Mitra S, Roqan IS, Ooi BS, He JH. Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting. Nano Letters. PMID 28177248 DOI: 10.1021/Acs.Nanolett.6B04559 |
0.317 |
|
| 2017 |
Janjua B, Sun H, Zhao C, Anjum DH, Priante D, Alhamoud AA, Wu F, Li X, Albadri AM, Alyamani AY, El-Desouki MM, Ng TK, Ooi BS. Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates. Optics Express. 25: 1381-1390. PMID 28158020 DOI: 10.1364/Oe.25.001381 |
0.451 |
|
| 2017 |
Shen C, Lee C, Stegenburgs E, Lerma JH, Ng TK, Nakamura S, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system Applied Physics Express. 10: 42201. DOI: 10.7567/Apex.10.042201 |
0.451 |
|
| 2017 |
Priante D, Janjua B, Prabaswara A, Subedi RC, Elafandy RT, Lopatin S, Anjum DH, Zhao C, Ng TK, Ooi BS. Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer Optical Materials Express. 7: 4214-4224. DOI: 10.1364/Ome.7.004214 |
0.441 |
|
| 2017 |
Tangi M, Shakfa MK, Mishra P, Li M, Chiu M, Ng TK, Li L, Ooi BS. Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2 Optical Materials Express. 7: 3697-3705. DOI: 10.1364/Ome.7.003697 |
0.336 |
|
| 2017 |
Al-Halafi A, Oubei HM, Ooi BS, Shihada B. Real-time video transmission over different underwater wireless optical channels using a directly modulated 520 nm laser diode Ieee\/Osa Journal of Optical Communications and Networking. 9: 826-832. DOI: 10.1364/Jocn.9.000826 |
0.319 |
|
| 2017 |
Shen C, Ng TK, Lee C, Leonard JT, Nakamura S, Speck JS, Denbaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications Proceedings of Spie. 10104. DOI: 10.1117/12.2251144 |
0.365 |
|
| 2017 |
Janjua B, Ng TK, Zhao C, Anjum DH, Prabaswara A, Consiglio GB, Shen C, Ooi BS. Health-friendly high-quality white light using violet-green-red laser and InGaN nanowires-based true yellow nanowires light-emitting diodes Proceedings of Spie. 10104. DOI: 10.1117/12.2250285 |
0.42 |
|
| 2017 |
Prabaswara A, Stowe DJ, Janjua B, Ng TK, Anjum DH, Longo P, Zhao C, Elafandy RT, Li X, Alyamani AY, El-Desouki MM, Ooi BS. Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence Journal of Nanophotonics. 11: 26015-26015. DOI: 10.1117/1.Jnp.11.026015 |
0.399 |
|
| 2017 |
Alias MS, Janjua B, Zhao C, Priante D, Alhamoud AA, Tangi M, Alanazi LM, Alatawi AA, Albadri AM, Alyamani AY, Ng TK, Ooi BS. Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings Ieee Photonics Journal. 9: 1-8. DOI: 10.1109/Jphot.2017.2749198 |
0.369 |
|
| 2017 |
Tangi M, Mishra P, Li M, Shakfa MK, Anjum DH, Hedhili MN, Ng TK, Li L, Ooi BS. Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well Applied Physics Letters. 111: 92104. DOI: 10.1063/1.4995976 |
0.334 |
|
| 2017 |
Zhao C, Ng TK, Tseng C, Li J, Shi Y, Wei N, Zhang D, Consiglio GB, Prabaswara A, Alhamoud AA, Albadri AM, Alyamani AY, Zhang X, Li L, Ooi BS. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters Rsc Advances. 7: 26665-26672. DOI: 10.1039/C7Ra03590J |
0.349 |
|
| 2017 |
Sun H, Shakfa MK, Muhammed MM, Janjua B, Li K, Lin R, Ng TK, Roqan IS, Ooi BS, Li X. Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes Acs Photonics. DOI: 10.1021/Acsphotonics.7B01235 |
0.323 |
|
| 2017 |
Ngang HP, Ahmad AL, Low SC, Ooi BS. Preparation of thermoresponsive PVDF/SiO2-PNIPAM mixed matrix membrane for saline oil emulsion separation and its cleaning efficiency Desalination. 408: 1-12. DOI: 10.1016/J.Desal.2017.01.005 |
0.3 |
|
| 2016 |
Shen C, Guo Y, Oubei HM, Ng TK, Liu G, Park KH, Ho KT, Alouini MS, Ooi BS. 20-meter underwater wireless optical communication link with 1.5 Gbps data rate. Optics Express. 24: 25502-25509. PMID 27828488 DOI: 10.1364/Oe.24.025502 |
0.323 |
|
| 2016 |
Ooi A, Wong A, Ng TK, Marondedze C, Gehring C, Ooi BS. Growth and development of Arabidopsis thaliana under single-wavelength red and blue laser light. Scientific Reports. 6: 33885. PMID 27659906 DOI: 10.1038/Srep33885 |
0.337 |
|
| 2016 |
Shen C, Lee C, Ng TK, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth. Optics Express. 24: 20281-20286. PMID 27607634 DOI: 10.1364/Oe.24.020281 |
0.392 |
|
| 2016 |
Conroy M, Li H, Kusch G, Zhao C, Ooi B, Edwards PR, Martin RW, Holmes JD, Parbrook PJ. Correction: Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods. Nanoscale. PMID 27353692 DOI: 10.1039/C6Nr90137A |
0.355 |
|
| 2016 |
Zhao C, Ng TK, ElAfandy RT, Prabaswara A, Consiglio GB, Ajia IA, Roqan IS, Janjua B, Shen C, Eid J, Alyamani AY, Eldesouki MM, Ooi BS. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics. Nano Letters. PMID 27352143 DOI: 10.1021/Acs.Nanolett.6B01945 |
0.392 |
|
| 2016 |
Xu X, Zhou J, Jiang L, Lubineau G, Ng T, Ooi BS, Liao HY, Shen C, Chen L, Zhu JY. Highly transparent, low-haze, hybrid cellulose nanopaper as electrodes for flexible electronics. Nanoscale. PMID 27270356 DOI: 10.1039/C6Nr02245F |
0.31 |
|
| 2016 |
Shen C, Ng TK, Leonard JT, Pourhashemi A, Nakamura S, DenBaars SP, Speck JS, Alyamani AY, El-Desouki MM, Ooi BS. High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Optics Letters. 41: 2608-2611. PMID 27244426 DOI: 10.1364/Ol.41.002608 |
0.405 |
|
| 2016 |
Conroy M, Li H, Kusch G, Zhao C, Ooi B, Edwards PR, Martin RW, Holmes JD, Parbrook PJ. Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods. Nanoscale. PMID 27174084 DOI: 10.1039/C6Nr00116E |
0.382 |
|
| 2016 |
Khan JI, Adhikari A, Sun J, Priante D, Bose R, Shaheen BS, Ng TK, Zhao C, Bakr OM, Ooi BS, Mohammed OF. Nanowires: Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy (Small 17/2016). Small (Weinheim An Der Bergstrasse, Germany). 12: 2312. PMID 27124006 DOI: 10.1002/Smll.201670087 |
0.335 |
|
| 2016 |
Khan JI, Adhikari A, Sun J, Priante D, Bose R, Shaheen BS, Ng TK, Zhao C, Bakr OM, Ooi BS, Mohammed OF. Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy. Small (Weinheim An Der Bergstrasse, Germany). PMID 26938476 DOI: 10.1002/Smll.201503651 |
0.311 |
|
| 2016 |
Zhao C, Ng TK, Wei N, Prabaswara A, Alias MS, Janjua B, Shen C, Ooi BS. Facile Formation of High-quality InGaN/GaN Quantum-disks-in-Nanowires on Bulk-Metal Substrates for High-power Light-emitters. Nano Letters. PMID 26745217 DOI: 10.1021/Acs.Nanolett.5B04190 |
0.377 |
|
| 2016 |
Mishra P, Janjua B, Ng TK, Anjum DH, Elafandy RT, Prabaswara A, Shen C, Salhi A, Alyamani AY, El-Desouki MM, Ooi BS. On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy Optical Materials Express. 6: 2052-2062. DOI: 10.1364/Ome.6.002052 |
0.395 |
|
| 2016 |
Al-Jabr AA, Majid MA, Shen C, Ng TK, Ooi BS. Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing Proceedings of Spie. 9892. DOI: 10.1117/12.2225164 |
0.443 |
|
| 2016 |
Leonard JT, Young EC, Yonkee BP, Cohen DA, Shen C, Margalith T, Ng TK, Denbaars SP, Ooi BS, Speck JS, Nakamura S. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts Proceedings of Spie. 9748. DOI: 10.1117/12.2206211 |
0.394 |
|
| 2016 |
Majid MA, Al-Jabr AA, Elafandy RT, Oubei HM, Alias MS, Alnahhas BA, Anjum DH, Ng TK, Shehata M, Ooi BS. First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique Proceedings of Spie - the International Society For Optical Engineering. 9767. DOI: 10.1117/12.2202768 |
0.464 |
|
| 2016 |
Al-Jabr AA, Mishra P, Majid MA, Ng TK, Ooi BS. Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics Journal of Nanophotonics. 10. DOI: 10.1117/1.Jnp.10.036004 |
0.428 |
|
| 2016 |
Zhao C, Ng TK, Jahangir S, Frost T, Bhattacharya P, Ooi BS. InGaN/GaN nanowire LEDs and lasers 16th International Conference On Numerical Simulation of Optoelectronic Devices, Nusod 2016. 103-104. DOI: 10.1109/NUSOD.2016.7547051 |
0.321 |
|
| 2016 |
Tangi M, Mishra P, Janjua B, Ng TK, Anjum DH, Prabaswara A, Yang Y, Albadri AM, Alyamani AY, El-Desouki MM, Ooi BS. Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy Journal of Applied Physics. 120. DOI: 10.1063/1.4959260 |
0.349 |
|
| 2016 |
Tangi M, Mishra P, Ng TK, Hedhili MN, Janjua B, Alias MS, Anjum DH, Tseng CC, Shi Y, Joyce HJ, Li LJ, Ooi BS. Determination of band offsets at GaN/single-layer MoS2 heterojunction Applied Physics Letters. 109. DOI: 10.1063/1.4959254 |
0.311 |
|
| 2016 |
Al-Jabr AA, Majid MA, Alias MS, Anjum DH, Ng TK, Ooi BS. Large bandgap blueshifts in the InGaP/InAlGaP laser structure using novel strain-induced quantum well intermixing Journal of Applied Physics. 119. DOI: 10.1063/1.4945104 |
0.455 |
|
| 2016 |
Janjua B, Ng TK, Zhao C, Prabaswara A, Consiglio GB, Priante D, Shen C, Elafandy RT, Anjum DH, Alhamoud AA, Alatawi AA, Yang Y, Alyamani AY, El-Desouki MM, Ooi BS. True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light Acs Photonics. 3: 2089-2095. DOI: 10.1021/Acsphotonics.6B00457 |
0.436 |
|
| 2016 |
Dursun I, Shen C, Parida MR, Pan J, Sarmah SP, Priante D, Alyami N, Liu J, Saidaminov MI, Alias MS, Abdelhady AL, Ng TK, Mohammed OF, Ooi BS, Bakr OM. Perovskite Nanocrystals as a Color Converter for Visible Light Communication Acs Photonics. 3: 1150-1156. DOI: 10.1021/Acsphotonics.6B00187 |
0.336 |
|
| 2016 |
Shen C, Ng TK, Leonard JT, Pourhashemi A, Oubei HM, Alias MS, Nakamura S, Denbaars SP, Speck JS, Alyamani AY, Eldesouki MM, Ooi BS. High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm Acs Photonics. 3: 262-268. DOI: 10.1021/Acsphotonics.5B00599 |
0.457 |
|
| 2016 |
Tsai YL, Lai KY, Lee MJ, Liao YK, Ooi BS, Kuo HC, He JH. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena Progress in Quantum Electronics. 49: 1-25. DOI: 10.1016/J.Pquantelec.2016.08.001 |
0.312 |
|
| 2015 |
Retamal JR, Oubei HM, Janjua B, Chi YC, Wang HY, Tsai CT, Ng TK, Hsieh DH, Kuo HC, Alouini MS, He JH, Lin GR, Ooi BS. 4-Gbit/s visible light communication link based on 16-QAM OFDM transmission over remote phosphor-film converted white light by using blue laser diode. Optics Express. 23: 33656-66. PMID 26832029 DOI: 10.1364/Oe.23.033656 |
0.344 |
|
| 2015 |
Lee C, Shen C, Oubei HM, Cantore M, Janjua B, Ng TK, Farrell RM, El-Desouki MM, Speck JS, Nakamura S, Ooi BS, DenBaars SP. 2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system. Optics Express. 23: 29779-87. PMID 26698461 DOI: 10.1364/Oe.23.029779 |
0.371 |
|
| 2015 |
Alias MS, Yang Y, Ng TK, Dursun I, Shi D, Saidaminov MI, Priante D, Bakr OM, Ooi BS. Enhanced Etching, Surface Damage Recovery and Sub-micron Patterning of Hybrid Perovskites using a Chemically Gas-assisted Focused Ion Beam for Subwavelength Grating Photonic Applications. The Journal of Physical Chemistry Letters. PMID 26688008 DOI: 10.1021/Acs.Jpclett.5B02558 |
0.351 |
|
| 2015 |
Chi YC, Hsieh DH, Lin CY, Chen HY, Huang CY, He JH, Ooi B, DenBaars SP, Nakamura S, Kuo HC, Lin GR. Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication. Scientific Reports. 5: 18690. PMID 26687289 DOI: 10.1038/Srep18690 |
0.327 |
|
| 2015 |
Pan J, Sarmah SP, Murali B, Dursun I, Peng W, Parida MR, Liu J, Sinatra L, Alyami N, Zhao C, Alarousu E, Ng TK, Ooi BS, Bakr OM, Mohammed OF. Air-Stable Surface-Passivated Perovskite Quantum Dots for Ultra-Robust, Single- and Two-Photon-Induced Amplified Spontaneous Emission. The Journal of Physical Chemistry Letters. PMID 26624490 DOI: 10.1021/Acs.Jpclett.5B02460 |
0.429 |
|
| 2015 |
Oubei HM, Duran JR, Janjua B, Wang HY, Tsai CT, Chi YC, Ng TK, Kuo HC, He JH, Alouini MS, Lin GR, Ooi BS. 4.8 Gbit/s 16-QAM-OFDM transmission based on compact 450-nm laser for underwater wireless optical communication. Optics Express. 23: 23302-9. PMID 26368431 DOI: 10.1364/Oe.23.023302 |
0.333 |
|
| 2015 |
Oubei HM, Li C, Park KH, Ng TK, Alouini MS, Ooi BS. 2.3 Gbit/s underwater wireless optical communications using directly modulated 520 nm laser diode. Optics Express. 23: 20743-8. PMID 26367926 DOI: 10.1364/Oe.23.020743 |
0.347 |
|
| 2015 |
Zhao C, Ng TK, Prabaswara A, Conroy M, Jahangir S, Frost T, O'Connell J, Holmes JD, Parbrook PJ, Bhattacharya P, Ooi BS. An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination. Nanoscale. 7: 16658-65. PMID 26242178 DOI: 10.1039/C5Nr03448E |
0.446 |
|
| 2015 |
Janjua B, Oubei HM, Durán Retamal JR, Ng TK, Tsai CT, Wang HY, Chi YC, Kuo HC, Lin GR, He JH, Ooi BS. Going beyond 4 Gbps data rate by employing RGB laser diodes for visible light communication. Optics Express. 23: 18746-53. PMID 26191934 DOI: 10.1364/Oe.23.018746 |
0.352 |
|
| 2015 |
Shen C, Ng TK, Ooi BS. Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing. Optics Express. 23: 7991-8. PMID 25837136 DOI: 10.1364/Oe.23.007991 |
0.42 |
|
| 2015 |
Alhashim HH, Khan MZM, Majid MA, Ng TK, Ooi BS. InAs/GaAs quantum-dot intermixing: Comparison of various dielectric encapsulants Optical Engineering. 54. DOI: 10.1117/1.Oe.54.10.107107 |
0.449 |
|
| 2015 |
Mishra P, Janjua B, Ng TK, Shen C, Salhi A, Alyamani AY, El-Desouki MM, Ooi BS. Achieving uniform carrier distribution in MBE-grown compositionally graded InGaN Multiple-Quantum-Well LEDs Ieee Photonics Journal. 7. DOI: 10.1109/Jphot.2015.2430017 |
0.378 |
|
| 2015 |
Khan MZM, Alhashim HH, Ng TK, Ooi BS. High-Power and High-Efficiency 1.3- µm Superluminescent Diode With Flat-Top and Ultrawide Emission Bandwidth Ieee Photonics Journal. 7: 1-8. DOI: 10.1109/Jphot.2015.2399442 |
0.382 |
|
| 2015 |
Hazari A, Aiello A, Ng TK, Ooi BS, Bhattacharya P. III-nitride disk-in-nanowire 1.2 μ m monolithic diode laser on (001)silicon Applied Physics Letters. 107. DOI: 10.1063/1.4935614 |
0.385 |
|
| 2015 |
Benaissa M, Sigle W, Ng TK, Bouayadi RE, Aken PAv, Jahangir S, Bhattacharya P, Ooi BS. On the impact of indium distribution on the electronic properties in InGaN nanodisks Applied Physics Letters. 106: 101910. DOI: 10.1063/1.4915117 |
0.329 |
|
| 2015 |
Priante D, Dursun I, Alias MS, Shi D, Melnikov VA, Ng TK, Mohammed OF, Bakr OM, Ooi BS. The recombination mechanisms leading to amplified spontaneous emission at the true-green wavelength in CH3NH3PbBr3 perovskites Applied Physics Letters. 106. DOI: 10.1063/1.4913463 |
0.377 |
|
| 2015 |
Jahangir S, Frost T, Hazari A, Yan L, Stark E, LaMountain T, Millunchick JM, Ooi BS, Bhattacharya P. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon Applied Physics Letters. 106. DOI: 10.1063/1.4913317 |
0.398 |
|
| 2015 |
Alhashim HH, Khan MZM, Majid MA, Ng TK, Ooi BS. Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers Electronics Letters. 51: 1444-1445. DOI: 10.1049/El.2015.1803 |
0.464 |
|
| 2015 |
Majid MA, Al-Jabr AA, Oubei HM, Alias MS, Anjum DH, Ng TK, Ooi BS. First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm Electronics Letters. 51: 1102-1104. DOI: 10.1049/El.2015.1658 |
0.403 |
|
| 2014 |
Frost T, Jahangir S, Stark E, Deshpande S, Hazari A, Zhao C, Ooi BS, Bhattacharya P. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon. Nano Letters. 14: 4535-41. PMID 24971807 DOI: 10.1021/Nl5015603 |
0.429 |
|
| 2014 |
Yue W, Wang Z, Yang Y, Li J, Wu Y, Chen L, Ooi B, Wang X, Zhang XX. Enhanced extraordinary optical transmission (EOT) through arrays of bridged nanohole pairs and their sensing applications. Nanoscale. 6: 7917-23. PMID 24898441 DOI: 10.1039/C4Nr01001A |
0.302 |
|
| 2014 |
Ng TK, Gasim A, Cha D, Janjua B, Yang Y, Jahangir S, Zhao C, Bhattacharya P, Ooi BS. The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2039627 |
0.363 |
|
| 2014 |
Janjua B, Ng TK, Alyamani AY, El-Desouki MM, Ooi BS. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers Proceedings of Spie. 9003. DOI: 10.1117/12.2039347 |
0.366 |
|
| 2014 |
Khan MZM, Ng TK, Lee C, Bhattacharya P, Ooi BS. Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters Ieee Journal of Quantum Electronics. 50: 51-61. DOI: 10.1109/Jqe.2013.2294092 |
0.458 |
|
| 2014 |
Bhowmick S, Baten MZ, Frost T, Ooi BS, Bhattacharya P. High performance InAs/In0.53Ga0.23Al 0.24As/InP quantum dot 1.55 μ tunnel injection laser Ieee Journal of Quantum Electronics. 50: 7-14. DOI: 10.1109/Jqe.2013.2290943 |
0.437 |
|
| 2014 |
Janjua B, Ng TK, Alyamani AY, El-Desouki MM, Ooi BS. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes Ieee Photonics Journal. 6: 1-12. DOI: 10.1109/Jphot.2014.2374596 |
0.356 |
|
| 2014 |
Khan MZM, Ng TK, Ooi BS. High-Performance 1.55- $\mu\hbox{m}$ Superluminescent Diode Based on Broad Gain InAs/InGaAlAs/InP Quantum Dash Active Region Ieee Photonics Journal. 6: 1-8. DOI: 10.1109/Jphot.2014.2337892 |
0.434 |
|
| 2014 |
Janjua B, Ng TK, Alyamani AY, El-Desouki MM, Ooi BS. Enhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodes Ieee Photonics Journal. 6: 1-9. DOI: 10.1109/Jphot.2014.2310199 |
0.418 |
|
| 2014 |
Khan MZM, Ng TK, Ooi BS. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices Progress in Quantum Electronics. 38: 237-313. DOI: 10.1016/J.Pquantelec.2014.11.001 |
0.46 |
|
| 2014 |
ElAfandy RT, Majid MA, Ng TK, Zhao L, Cha D, Ooi BS. Exfoliation of threading dislocation-free, single-crystalline, ultrathin gallium nitride nanomembranes Advanced Functional Materials. 24: 2305-2311. DOI: 10.1002/Adfm.201303001 |
0.357 |
|
| 2013 |
Khan MZ, Majid MA, Ng TK, Cha D, Ooi BS. Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm. Optics Letters. 38: 3720-3. PMID 24081035 DOI: 10.1364/Ol.38.003720 |
0.427 |
|
| 2013 |
Slimane AB, Najar A, Elafandy R, San-Román-Alerigi DP, Anjum D, Ng TK, Ooi BS. On the phenomenon of large photoluminescence red shift in GaN nanoparticles. Nanoscale Research Letters. 8: 342. PMID 23902709 DOI: 10.1186/1556-276X-8-342 |
0.345 |
|
| 2013 |
Khan MZM, Ng TK, Lee C-, Bhattacharya P, Ooi BS. Effect of optical waveguiding mechanism on the lasing action of chirped InAs/AlGaInAs/InP quantum dash lasers Proceedings of Spie. 8640: 864005. DOI: 10.1117/12.2003462 |
0.428 |
|
| 2013 |
Khan MZM, Ng TK, Lee CS, Anjum DH, Cha D, Bhattacharya P, Ooi BS. Distinct lasing operation from chirped InAs/InP quantum-dash laser Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2272781 |
0.417 |
|
| 2013 |
Heo J, Zhou Z, Guo W, Ooi BS, Bhattacharya P. Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy Applied Physics Letters. 103: 181102. DOI: 10.1063/1.4827338 |
0.368 |
|
| 2013 |
Khan MZM, Ng TK, Lee CS, Bhattacharya P, Ooi BS. Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission Applied Physics Letters. 102: 91102. DOI: 10.1063/1.4794407 |
0.437 |
|
| 2013 |
Liu C, Falco AD, Molinari D, Khan Y, Ooi BS, Krauss TF, Fratalocchi A. Enhanced energy storage in chaotic optical resonators Nature Photonics. 7: 473-478. DOI: 10.1038/Nphoton.2013.108 |
0.308 |
|
| 2012 |
San-Roman-Alerigi DP, Ng TK, Zhang Y, Ben Slimane A, Alsunaidi M, Ooi BS. Generation of J0-Bessel-Gauss beam by a heterogeneous refractive index map. Journal of the Optical Society of America. a, Optics, Image Science, and Vision. 29: 1252-8. PMID 22751390 DOI: 10.1364/Josaa.29.001252 |
0.316 |
|
| 2012 |
Das A, Heo J, Bayraktaroglu A, Guo W, Ng TK, Phillips J, Ooi BS, Bhattacharya P. Room temperature strong coupling effects from single ZnO nanowire microcavity. Optics Express. 20: 11830-7. PMID 22714170 DOI: 10.1364/Oe.20.011830 |
0.301 |
|
| 2012 |
Khan MZM, Ng TK, Schwingenschlogl U, Ooi BS. Spectral Analysis of Quantum-Dash Lasers: Effect of Inhomogeneous Broadening of the Active-Gain Region Ieee Journal of Quantum Electronics. 48: 608-615. DOI: 10.1109/Jqe.2012.2188852 |
0.439 |
|
| 2012 |
ElAfandy RT, Ng TK, Cha D, Zhang M, Bhattacharya P, Ooi BS. Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots Journal of Applied Physics. 112: 063506. DOI: 10.1063/1.4751434 |
0.427 |
|
| 2012 |
Najar A, Slimane AB, Hedhili MN, Anjum D, Sougrat R, Ng TK, Ooi BS. Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method Journal of Applied Physics. 112: 33502. DOI: 10.1063/1.4740051 |
0.333 |
|
| 2011 |
Khan MZM, Ng TK, Schwingenschlogl U, Bhattacharya P, Ooi BS. Effect of the number of stacking layers on the characteristics of quantum-dash lasers. Optics Express. 19: 13378-13385. PMID 21747493 DOI: 10.1364/Oe.19.013378 |
0.43 |
|
| 2011 |
Chen C, Wang Y, Djie HS, Ooi BS, Lester LF, Koch TL, Hwang JCM. Intrinsic dynamics of quantum-dash lasers Ieee Journal On Selected Topics in Quantum Electronics. 17: 1167-1174. DOI: 10.1109/Jstqe.2010.2103373 |
0.434 |
|
| 2011 |
Guo W, Banerjee A, Bhattacharya PK, Ooi BS. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon Applied Physics Letters. 98: 193102. DOI: 10.1063/1.3588201 |
0.403 |
|
| 2011 |
Khan MZM, Ng TK, Schwingenschlogl U, Bhattacharya P, Ooi BS. Modeling the lasing spectra of InAs/InP Quantum dash lasers Applied Physics Letters. 98: 101105. DOI: 10.1063/1.3560052 |
0.428 |
|
| 2011 |
Ryasnyanskiy A, Biaggio I, Tan C, Djie H, Ooi B. Carrier relaxation dynamics in InAs/InGaAlAs quantum dashes Journal of Luminescence. 131: 486-488. DOI: 10.1016/J.Jlumin.2010.09.047 |
0.39 |
|
| 2010 |
Chen C, Ding G, Ooi BS, Lester LF, Helmy A, Koch TL, Hwang JC. Optical injection modulation of quantum-dash semiconductor lasers by intra-cavity stimulated Raman scattering. Optics Express. 18: 6211-9. PMID 20389644 DOI: 10.1364/Oe.18.006211 |
0.401 |
|
| 2010 |
Chen C, Djie HS, Ding YH, Ooi BS, Hwang JCM, Aimez V. Fundamental and Dynamic Properties of Intermixed InGaAs-InGaAsP Quantum-Well Lasers Ieee Journal of Quantum Electronics. 46: 1368-1374. DOI: 10.1109/Jqe.2010.2047939 |
0.423 |
|
| 2009 |
Chen Z, Salagaj T, Jensen C, Strobl K, Hongpinyo V, Ooi B, Nakarmi M, Shum K. Non-Resonant Two-Photon Absorption-Induced Photoluminescence Study on ZnO Nanostructures Epitaxially Grown on Si (100) Substrates by Chemical Vapor Deposition Method Mrs Proceedings. 1178. DOI: 10.1557/Proc-1178-Aa09-13 |
0.304 |
|
| 2009 |
Dimas CE, Tan C, Djie HS, McAulay AD, Ooi B. A Temporal Coherence Study of Quantum-Dot/Dash Broadband Lasers and Superluminescent Diodes Ieee Photonics Technology Letters. 21: 694-696. DOI: 10.1109/Lpt.2009.2016575 |
0.797 |
|
| 2009 |
Tan CL, Djie HS, Wang Y, Dimas CE, Hongpinyo V, Ding YH, Ooi BS. The Influence of Nonequilibrium Distribution on Room-Temperature Lasing Spectra in Quantum-Dash Lasers Ieee Photonics Technology Letters. 21: 30-32. DOI: 10.1109/Lpt.2008.2008197 |
0.784 |
|
| 2009 |
Tan CL, Wang Y, Djie HS, Ooi BS. The Dynamic Characteristics and Linewidth Enhancement Factor of Quasi-Supercontinuum Self-Assembled Quantum Dot Lasers Ieee Journal of Quantum Electronics. 45: 1177-1182. DOI: 10.1109/Jqe.2009.2020813 |
0.425 |
|
| 2009 |
Izhar U, Ooi BS, Tatic-Lucic S. Multi-axis micromirror for optical coherence tomography Procedia Chemistry. 1: 1147-1150. DOI: 10.1016/J.Proche.2009.07.286 |
0.336 |
|
| 2008 |
Wang Y, Djie HS, Ooi BS, Hwang JCM, Fang X-, Wu Y, Fastenau JM, Liu WK, Dang GT, Chang WH. Monolithic InAs/InAlGaAs/InP quantum-dash-in-well extended-cavity laser fabricated by postgrowth intermixing Laser Physics. 18: 400-402. DOI: 10.1134/S11490-008-4007-1 |
0.456 |
|
| 2008 |
Chen C, Wang Y, Tan CL, Djie HS, Ooi BS, Hwang J, Dang GT, Chang WH. Effects of Intermixing on Gain and Alpha Factors of Quantum-Dash Lasers Ieee Photonics Technology Letters. 20: 1654-1656. DOI: 10.1109/Lpt.2008.2002747 |
0.394 |
|
| 2008 |
Chen C, Halder S, Ooi BS, Hwang JCM. Intrinsic response of quantum dash lasers under optical modulation Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 471-472. DOI: 10.1109/LEOS.2008.4688695 |
0.305 |
|
| 2008 |
Susanto Djie H, Wang Y, Ding Y, Wang D, Hwang JCM, Fang X, Wu Y, Fastenau JM, Liu AWK, Dang GT, Chang WH, Ooi BS. Quantum Dash Intermixing Ieee Journal of Selected Topics in Quantum Electronics. 14: 1239-1249. DOI: 10.1109/Jstqe.2008.921396 |
0.694 |
|
| 2008 |
Ooi BS, Djie HS, Wang Y, Tan C, Hwang JCM, Fang X, Fastenau JM, Liu AWK, Dang GT, Chang WH. Quantum Dashes on InP Substrate for Broadband Emitter Applications Ieee Journal of Selected Topics in Quantum Electronics. 14: 1230-1238. DOI: 10.1109/Jstqe.2008.919277 |
0.485 |
|
| 2008 |
Tan CL, Djie HS, Wang Y, Dimas CE, Hongpinyo V, Ding YH, Ooi BS. Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser Applied Physics Letters. 93: 111101. DOI: 10.1063/1.2981578 |
0.799 |
|
| 2008 |
Tan CL, Wang Y, Djie HS, Ooi BS. The role of optical gain broadening in the ultrabroadband InGaAs/GaAs interband quantum-dot laser Computational Materials Science. 44: 167-173. DOI: 10.1016/J.Commatsci.2008.01.049 |
0.446 |
|
| 2008 |
Tan CL, Wang Y, Djie HS, Ooi BS. Thresholds of quasi-supercontinuum interband quantum dot lasers Optical and Quantum Electronics. 40: 1227-1231. DOI: 10.1007/S11082-009-9277-2 |
0.422 |
|
| 2008 |
Tan CL, Wang Y, Djie HS, Ooi BS. Simulation of characteristics of broadband quantum dot lasers Optical and Quantum Electronics. 40: 391-395. DOI: 10.1007/S11082-008-9225-6 |
0.44 |
|
| 2007 |
Djie HS, Ooi BS, Fang XM, Wu Y, Fastenau JM, Liu WK, Hopkinson M. Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser. Optics Letters. 32: 44-6. PMID 17167578 DOI: 10.1364/Ol.32.000044 |
0.458 |
|
| 2007 |
Hongpinyo V, Ding Y, Anderson J, Djie HS, Ooi BS, Du R, Ganjoo A, Jain H. Sputtered SiO2 Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures Advanced Materials Research. 31: 33-35. DOI: 10.4028/Www.Scientific.Net/Amr.31.33 |
0.414 |
|
| 2007 |
Ding YH, Hongpinyo V, Djie HS, Ooi BS. Nano-Scale Bandgap Engineering Using Nitrogen Implantation: Quantum-Well, Quantum-Dash and Quantum-Dot Nanostructures Advanced Materials Research. 31: 182-184. DOI: 10.4028/Www.Scientific.Net/Amr.31.182 |
0.397 |
|
| 2007 |
Ooi BS, Djie HS, Helmy A, Hwang JC. Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser Advanced Materials Research. 31: 173-175. DOI: 10.4028/Www.Scientific.Net/Amr.31.173 |
0.464 |
|
| 2007 |
Djie HS, Dimas CE, Wang D, Ooi B, Hwang JCM, Dang GT, Chang WH. InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging Ieee Sensors Journal. 7: 251-257. DOI: 10.1109/Jsen.2006.886884 |
0.797 |
|
| 2007 |
Tan CL, Wang Y, Djie HS, Ooi BS. Role of optical gain broadening in the broadband semiconductor quantum-dot laser Applied Physics Letters. 91: 61117. DOI: 10.1063/1.2762287 |
0.438 |
|
| 2007 |
Ivanov T, Donchev V, Wang Y, Djie HS, Ooi BS. Interdiffused InAs∕InGaAlAs quantum dashes-in-well structures studied by surface photovoltage spectroscopy Journal of Applied Physics. 101: 114309. DOI: 10.1063/1.2743088 |
0.398 |
|
| 2007 |
Djie HS, Wang Y, Negro D, Ooi BS. Postgrowth band gap trimming of InAs∕InAlGaAs quantum-dash laser Applied Physics Letters. 90: 31101. DOI: 10.1063/1.2431707 |
0.45 |
|
| 2007 |
Djie H, Wang Y, Ooi B, Wang D, Hwang J, Fang X, Wu Y, Fastenau J, Liu W, Dang G, Chang W. Wavelength tuning of InAs∕InAlGaAs quantum-dash-in-well laser using postgrowth intermixing Electronics Letters. 43: 33. DOI: 10.1049/El:20072837 |
0.453 |
|
| 2007 |
Wang Y, Djie HS, Ooi BS, Rotella P, Dowd P, Aimez V, Cao Y, Zhang Y. Interdiffusion effect on quantum-well structures grown on GaSb substrate Thin Solid Films. 515: 4352-4355. DOI: 10.1016/J.Tsf.2006.07.099 |
0.437 |
|
| 2007 |
Djie H, Wang D, Ooi B, Hwang J, Fang X, Wu Y, Fastenau J, Liu W. Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing Thin Solid Films. 515: 4344-4347. DOI: 10.1016/J.Tsf.2006.07.097 |
0.431 |
|
| 2006 |
Djie HS, Wang Y, Ooi BS, Wang D, Hwang JCM, Dang GT, Chang WH. Defect Annealing of InAs–InAlGaAs Quantum-Dash-in-Asymmetric-Well Laser Ieee Photonics Technology Letters. 18: 2329-2331. DOI: 10.1109/Lpt.2006.885301 |
0.439 |
|
| 2006 |
Djie HS, Dimas CE, Ooi BS. Wideband quantum-dash-in-well superluminescent diode at 1.6 /spl mu/m Ieee Photonics Technology Letters. 18: 1747-1749. DOI: 10.1109/Lpt.2006.880796 |
0.791 |
|
| 2006 |
Djie HS, Gunawan O, Wang DN, Ooi BS, Hwang JCM. Group-III vacancy induced Inx Ga1-x As quantum dot interdiffusion Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.155324 |
0.388 |
|
| 2006 |
Mu X, Ding YJ, Ooi BS, Hopkinson M. Investigation of carrier dynamics on InAs quantum dots embedded in InGaAs∕GaAs quantum wells based on time-resolved pump and probe differential photoluminescence Applied Physics Letters. 89: 181924. DOI: 10.1063/1.2374801 |
0.418 |
|
| 2006 |
Wang Y, Djie HS, Ooi BS. Quantum-confined Stark effect in interdiffused quantum dots Applied Physics Letters. 89: 151104. DOI: 10.1063/1.2358296 |
0.383 |
|
| 2006 |
Djie HS, Ooi BS, Gunawan O. Quantum dot intermixing using excimer laser irradiation Applied Physics Letters. 89. DOI: 10.1063/1.2337537 |
0.425 |
|
| 2006 |
Djie HS, Wang D, Ooi BS, Hwang JCM, Fang X, Wu Y, Fastenau JM, Liu WK. Intermixing of InGaAs quantum dots grown by cycled monolayer deposition Journal of Applied Physics. 100: 033527. DOI: 10.1063/1.2226516 |
0.375 |
|
| 2006 |
Nie D, Mei T, Djie HS, Ooi BS, Zhang XH. Improving crystal quality of InGaAs∕GaAs quantum dots by inductively coupled Ar plasma Applied Physics Letters. 88: 251102. DOI: 10.1063/1.2215602 |
0.344 |
|
| 2006 |
Wang Y, Djie HS, Ooi BS. Low-loss monolithic extended cavity laser by low-energy ion-implantation induced intermixing Electronics Letters. 42: 699-701. DOI: 10.1049/El:20061270 |
0.382 |
|
| 2006 |
Djie H, Ooi B, Aimez V. InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering Journal of Crystal Growth. 288: 40-43. DOI: 10.1016/J.Jcrysgro.2005.12.060 |
0.303 |
|
| 2006 |
Dimas CE, Djie HS, Ooi BS. Superluminescent diodes using quantum dots superlattice Journal of Crystal Growth. 288: 153-156. DOI: 10.1016/J.Jcrysgro.2005.12.043 |
0.799 |
|
| 2005 |
Wang Y, Dimas CE, Djie HS, Ooi BS, Dang G, Chang W. Spatial Bandgap Tuning in Long Wavelength InAs Quantum Dots-in-Well Laser Structure Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee03-07 |
0.795 |
|
| 2005 |
Gunawan O, Djie HS, Ooi BS. Three-dimensional model for interdiffused quantum dots International Journal of Nanoscience. 4: 683-688. DOI: 10.1142/S0219581X05003693 |
0.374 |
|
| 2005 |
Gunawan O, Djie HS, Ooi BS. Electronics states of interdiffused quantum dots Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.205319 |
0.357 |
|
| 2005 |
Djie HS, Ooi BS, Aimez V. Neutral ion-implantation-induced selective quantum-dot intermixing Applied Physics Letters. 87: 261102. DOI: 10.1063/1.2150279 |
0.337 |
|
| 2005 |
Wang Y, Djie HS, Ooi BS. Interdiffusion in InGaAsSb∕AlGaAsSb quantum wells Journal of Applied Physics. 98: 73508. DOI: 10.1063/1.2061893 |
0.385 |
|
| 2005 |
Djie HS, Ho CKF, Mei T, Ooi BS. Quantum well intermixing enhancement using Ge-doped sol-gel derived SiO2 encapsulant layer in InGaAs∕InP laser structure Applied Physics Letters. 86: 81106. DOI: 10.1063/1.1868867 |
0.426 |
|
| 2004 |
Ooi BS, Ong TK, Gunawan O. Multiple-wavelength integration in InGaAs-InGaAsP structures using pulsed laser irradiation-induced quantum-well intermixing Ieee Journal of Quantum Electronics. 40: 481-490. DOI: 10.1109/Jqe.2004.826431 |
0.436 |
|
| 2003 |
Ng SL, Djie HS, Lim HS, Lam YL, Chan YC, Dowd P, Ooi BS, Aimez V, Beauvais J, Beerens J. Impact of quantum well intermixing on polarization anisotropy of InGaAs/InGaAsP quantum well modulators Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 1482. DOI: 10.1116/1.1591738 |
0.354 |
|
| 2003 |
Ng S, Djie H, Lim H, Lam Y, Chan Y, Ooi B, Aimez V, Beauvais J, Beerens J. Fabrication of wide-band electro-absorption waveguide modulator arrays using quantum well-intermixing process Optics Communications. 226: 191-197. DOI: 10.1016/J.Optcom.2003.08.016 |
0.391 |
|
| 2002 |
Ng SL, Lim HS, Lam YL, Chan YC, Ooi BS, Aimez V, Beauvais J, Beerens J. Generation of Multiple Energy Bandgaps Using a Gray Mask Process and Quantum Well Intermixing Japanese Journal of Applied Physics. 41: 1080-1084. DOI: 10.1143/Jjap.41.1080 |
0.316 |
|
| 2002 |
Lim H, Aimez V, Ooi B, Beauvais J, Beerens J. A novel fabrication technique for multiple-wavelength photonic-integrated devices in InGaAs-InGaAsP laser heterostructures Ieee Photonics Technology Letters. 14: 594-596. DOI: 10.1109/68.998695 |
0.39 |
|
| 2002 |
Ng SL, Lim HS, Lam YL, Chan YC, Ooi BS, Aimez V, Beauvais J, Beerens J. Multiple-wavelength operation of electroabsorption intensity modulator array fabricated using the one-step quantum well intermixing process Applied Physics Letters. 81: 1958-1960. DOI: 10.1063/1.1508159 |
0.383 |
|
| 2002 |
Ng S, Lim H, Lam Y, Chan Y, Ooi B, Aimez V, Beauvais J, Beerens J. Polarisation insensitive InGaAs∕InGaAsP electro-absorption intensity modulator using quantum well intermixing process Electronics Letters. 38: 241. DOI: 10.1049/El:20020151 |
0.384 |
|
| 2001 |
Ng SL, Ooi BS, Lam YL, Chan YC. Fabrication of band-gap tuned lasers in GaAs/AlGaAs structure using one-step rapid thermal process Journal of Optical Communications. 22: 162-165. DOI: 10.1515/Joc.2001.22.5.162 |
0.425 |
|
| 2001 |
Ong TK, Chan YC, Ooi BS. Fabrication of multiple-wavelength lasers in InGaAs-InGaAsP structures using direct laser writing Ieee Photonics Technology Letters. 13: 1161-1163. DOI: 10.1109/68.959350 |
0.372 |
|
| 2001 |
Aimez V, Beauvais J, Beerens J, Ng SL, Ooi BS. Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures Applied Physics Letters. 79: 3582-3584. DOI: 10.1063/1.1421234 |
0.407 |
|
| 2001 |
Ong TK, Chan YC, Lam YL, Ooi BS. Wavelength tuning in InGaAs/InGaAsP quantum well lasers using pulsed-photoabsorption-induced disordering Applied Physics Letters. 78: 2637-2639. DOI: 10.1063/1.1362329 |
0.399 |
|
| 2000 |
Liu J, Lam Y, Chan Y, Zhou Y, Ooi BS, Tan G, Yao J. Embossed Bragg Gratings Based on Organically Modified Silane Waveguides in InP. Applied Optics. 39: 4942-4945. PMID 18350088 DOI: 10.1364/Ao.39.004942 |
0.347 |
|
| 2000 |
Ong TK, Gunawan O, Ooi BS, Lam YL, Chan YC, Zhou Y, Helmy AS, Marsh JH. High-spatial-resolution quantum-well intermixing process in GaInAs/GaInAsP laser structure using pulsed-photoabsorption-induced disordering Journal of Applied Physics. 87: 2775-2779. DOI: 10.1063/1.372255 |
0.407 |
|
| 2000 |
Ong TK, Chen YW, Ooi BS, Lam YL, Chan YC. Pulsed-laser irradiation quantum well intermixing process in GaInAs/GaInAsP laser structures Microelectronic Engineering. 51: 349-355. DOI: 10.1016/S0167-9317(99)00506-7 |
0.385 |
|
| 2000 |
Xiang Q, Zhou Y, Ooi BS, Lam YL, Chan YC, Kam CH. Optical properties of Er3+-doped SiO2-GeO2-Al2O3 planar waveguide fabricated by sol–gel processes Thin Solid Films. 370: 243-247. DOI: 10.1016/S0040-6090(00)00915-9 |
0.347 |
|
| 2000 |
Ng SL, Ooi BS, Lam YL, Chan YC, Zhou Y, Buddhudu S. Characterization of rapid thermal oxidation of AlAs on GaAs/AlGaAs structure Surface and Interface Analysis. 29: 33-37. DOI: 10.1002/(Sici)1096-9918(200001)29:1<33::Aid-Sia690>3.0.Co;2-M |
0.312 |
|
| 1998 |
Lee LH, Ooi BS, Lam YL, Chan YC, Kam CH. Quantum well intermixing in GaAs-AlGaAs laser structure using sol-gel SiO2 dielectric cap Proceedings of Spie. 3547: 319-323. DOI: 10.1117/12.319645 |
0.418 |
|
| 1998 |
Qiu BC, Ooi BS, Bryce AC, Hicks SE, Wilkinson CDW, Rue RMDL, Marsh JH. Reduced damage reactive ion etching process for fabrication of InGaAsP/InGaAs multiple quantum well ridge waveguide lasers Journal of Vacuum Science & Technology B. 16: 1818-1822. DOI: 10.1116/1.590093 |
0.419 |
|
| 1998 |
Ooi BS, Tang YS, Helmy AS, Bryce AC, Marsh JH, Paquette M, Beauvais J. Optical characterization of GaAs/AlGaAs quantum well wires fabricated using arsenic implantation induced intermixing Journal of Applied Physics. 83: 4526-4530. DOI: 10.1063/1.367236 |
0.405 |
|
| 1997 |
Ooi BS, Hamilton CJ, McIlvaney K, Bryce AC, Rue RMDL, Marsh JH, Roberts JS. Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation Ieee Photonics Technology Letters. 9: 587-589. DOI: 10.1109/68.588128 |
0.431 |
|
| 1997 |
Ooi BS, McIlvaney K, Street MW, Helmy AS, Ayling SG, Bryce AC, Marsh JH, Roberts JS. Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion Ieee Journal of Quantum Electronics. 33: 1784-1793. DOI: 10.1109/3.631284 |
0.466 |
|
| 1997 |
Cusumano P, Ooi BS, Helmy AS, Ayling SG, Bryce AC, Marsh JH, Voegele B, Rose MJ. Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer Journal of Applied Physics. 81: 2445-2447. DOI: 10.1063/1.364295 |
0.344 |
|
| 1996 |
Bryce AC, Rue RMDL, Marsh JH, Ooi BS, Qiu B, Button CC, Roberts JS. Quantum Well Intermixing in Gain As/Gainasp and Gaas/Algaas Structures Using Pulsed Laser Irradiation Mrs Proceedings. 450. DOI: 10.1557/Proc-450-413 |
0.405 |
|
| 1995 |
Ooi BS, Ayling SG, Bryce AC, Marsh JH. Fabrication of multiple wavelength lasers in GaAs-AlGaAs structures using a one-step spatially controlled quantum-well intermixing technique Ieee Photonics Technology Letters. 7: 944-946. DOI: 10.1109/68.414663 |
0.443 |
|
| 1995 |
Ooi BS, Hicks SE, Bryce AC, Wilkinson CDW, Marsh JH. Study of C2F6 overetch induced damage and the effects of overetch on subsequent SiCl4 etch of GaAs/AlGaAs Journal of Applied Physics. 77: 4961-4966. DOI: 10.1063/1.359303 |
0.334 |
|
| 1995 |
Ooi BS, Bryce AC, Marsh JH. Integration process for photonic integrated circuits using plasma damage induced layer intermixing Electronics Letters. 31: 449-451. DOI: 10.1049/El:19950342 |
0.412 |
|
| 1994 |
Ooi BS, Bryce AC, Wilkinson CDW, Marsh JH. Study of reactive ion etching‐induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe Applied Physics Letters. 64: 598-600. DOI: 10.1063/1.111061 |
0.359 |
|
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