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David B. Janes - Publications

Affiliations: 
Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Molecular Physics, Physical Chemistry
Website:
https://engineering.purdue.edu/ECE/People/ptProfile?resource_id=2934
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127 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Kwon J, Delker CJ, Harris CT, Das SR, Janes DB. Experimental and modeling study of 1/f noise in multilayer MoS2 and MoSe2 field-effect transistors Journal of Applied Physics. 128: 94501. DOI: 10.1063/5.0014759  0.777
2020 Kwon J, Delker CJ, Janes DB, Harris CT, Das SR. Molybdenum Contacts to MoS2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise Physica Status Solidi (a). 1900880. DOI: 10.1002/Pssa.201900880  0.773
2019 Kwon J, Park JH, Delker CJ, Harris CT, Swartzentruber B, Das SR, Janes DB. Transitions between channel and contact regimes of low-frequency noise in many-layer MoS2 field effect transistors Applied Physics Letters. 114: 113502. DOI: 10.1063/1.5063501  0.788
2018 Sadeque S, Candadai A, Gong Y, Maize K, Ziabari AK, Mohammed AMS, Shakouri A, Fisher T, Janes DB. Transient Self-Heating at Nanowire Junctions in Silver Nanowire Network Conductors Ieee Transactions On Nanotechnology. 17: 1171-1180. DOI: 10.1109/Tnano.2018.2866363  0.512
2018 Sadeque S, Gong Y, Maize K, Ziabari AK, Mohammed AMS, Shakouri A, Janes DB. Transient Thermal Response of Hotspots in Graphene–Silver Nanowire Hybrid Transparent Conducting Electrodes Ieee Transactions On Nanotechnology. 17: 276-284. DOI: 10.1109/Tnano.2018.2794782  0.303
2018 Kwon J, Prakash A, Das SR, Janes DB. Correlating Electronic Transport and 1/ f Noise in MoSe2 Field-Effect Transistors Physical Review Applied. 10. DOI: 10.1103/Physrevapplied.10.064029  0.329
2018 Jacobs-Gedrim RB, Murphy MT, Yang F, Jain N, Shanmugam M, Song ES, Kandel Y, Hesamaddin P, Yu HY, Anantram MP, Janes DB, Yu B. Reversible phase-change behavior in two-dimensional antimony telluride (Sb2Te3) nanosheets Applied Physics Letters. 112: 133101. DOI: 10.1063/1.5013099  0.306
2016 Das SR, Sadeque S, Jeong C, Chen R, Alam MA, Janes DB. Copercolating Networks: An Approach for Realizing High-Performance Transparent Conductors using Multicomponent Nanostructured Networks Nanophotonics. 5: 180-195. DOI: 10.1515/Nanoph-2016-0036  0.349
2015 Maize K, Das SR, Sadeque S, Mohammed AMS, Shakouri A, Janes DB, Alam MA. Super-Joule heating in graphene and silver nanowire network Applied Physics Letters. 106. DOI: 10.1063/1.4916943  0.33
2015 Das SR, Kwon J, Prakash A, Delker CJ, Das S, Janes DB. Low-frequency noise in MoSe2 field effect transistors Applied Physics Letters. 106. DOI: 10.1063/1.4913714  0.801
2014 Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J. Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors. Acs Nano. 8: 6281-7. PMID 24848303 DOI: 10.1021/Nn5017567  0.826
2014 Das SR, Kwon J, Janes DB. 1/f noise in MoS2 field effect transistors with various layer thicknesses Materials Research Society Symposium Proceedings. 1701. DOI: 10.1557/Opl.2014.554  0.459
2014 Delker CJ, Zi Y, Yang C, Janes DB. Current and noise properties of InAs nanowire transistors with asymmetric contacts induced by gate overlap Ieee Transactions On Electron Devices. 61: 884-889. DOI: 10.1109/Ted.2013.2296298  0.821
2014 Das SR, Akatay C, Mohammad A, Khan MR, Maeda K, Deacon RS, Ishibashi K, Chen YP, Sands TD, Alam MA, Janes DB. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties Journal of Applied Physics. 116. DOI: 10.1063/1.4893704  0.54
2013 Kim S, Kim H, Janes DB, Ju S. Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements. Nanotechnology. 24: 305201. PMID 23807306 DOI: 10.1088/0957-4484/24/30/305201  0.745
2013 Makowski MS, Kim S, Gaillard M, Janes D, Manfra MJ, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications. Applied Physics Letters. 102: 74102. PMID 23509411 DOI: 10.1063/1.4791788  0.58
2013 Razavieh A, Mehrotra S, Singh N, Klimeck G, Janes D, Appenzeller J. Utilizing the unique properties of nanowire MOSFETs for RF applications. Nano Letters. 13: 1549-54. PMID 23464859 DOI: 10.1021/Nl3047078  0.817
2013 Fang J, Das SR, Prokopeva LJ, Shalaev VM, Janes DB, Kildishev AV. Time-domain modeling of silver nanowires-graphene transparent conducting electrodes Proceedings of Spie - the International Society For Optical Engineering. 8806. DOI: 10.1117/12.2026871  0.317
2013 Delker CJ, Zi Y, Yang C, Janes DB. Low-frequency noise contributions from channel and contacts in InAs nanowire transistors Ieee Transactions On Electron Devices. 60: 2900-2905. DOI: 10.1109/Ted.2013.2274009  0.798
2013 Razavieh A, Janes DB, Appenzeller J. Transconductance linearity analysis of 1-D, nanowire FETs in the quantum capacitance limit Ieee Transactions On Electron Devices. 60: 2071-2076. DOI: 10.1109/Ted.2013.2259238  0.791
2013 Delker CJ, Zi Y, Yang C, Janes DB. Temperature dependence of current and low-frequency noise in InAs nanowire transistors Device Research Conference - Conference Digest, Drc. 57-58. DOI: 10.1109/DRC.2013.6633791  0.759
2013 McCarthy PT, Vander Laan SJ, Janes DB, Fisher TS. Photonically excited electron emission from modified graphitic nanopetal arrays Journal of Applied Physics. 113. DOI: 10.1063/1.4805038  0.509
2013 Lee S, Kim S, Janes DB, Meyyappan M, Ju S. Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications Aip Advances. 3. DOI: 10.1063/1.4789405  0.717
2013 Chen R, Das SR, Jeong C, Khan MR, Janes DB, Alam MA. Co-percolating graphene-wrapped silver nanowire network for high performance, highly stable, transparent conducting electrodes Advanced Functional Materials. 23: 5150-5158. DOI: 10.1002/Adfm.201300124  0.344
2012 Mohammad A, Das SR, Khan MR, Alam MA, Janes DB. Wavelength-dependent absorption in structurally tailored randomly branched vertical arrays of InSb nanowires. Nano Letters. 12: 6112-8. PMID 23131195 DOI: 10.1021/Nl302803E  0.386
2012 Seo K, Kim S, Janes DB, Jung MW, An KS, Ju S. Effect of nitrogen plasma on the surface of indium oxide nanowires. Nanotechnology. 23: 435201. PMID 23060605 DOI: 10.1088/0957-4484/23/43/435201  0.705
2012 Zhao Y, Candebat D, Delker C, Zi Y, Janes D, Appenzeller J, Yang C. Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors. Nano Letters. 12: 5331-6. PMID 22950905 DOI: 10.1021/Nl302684S  0.814
2012 Kim S, Carpenter PD, Jean RK, Chen H, Zhou C, Ju S, Janes DB. Role of self-assembled monolayer passivation in electrical transport properties and flicker noise of nanowire transistors. Acs Nano. 6: 7352-61. PMID 22775468 DOI: 10.1021/Nn302484C  0.777
2012 Delker CJ, Kim S, Borg M, Wernersson LE, Janes DB. 1/f noise sources in dual-gated indium arsenide nanowire transistors Ieee Transactions On Electron Devices. 59: 1980-1987. DOI: 10.1109/Ted.2012.2194150  0.829
2012 Delker CJ, Zi Y, Yang C, Janes DB. Low-frequency noise in contact and channel regions of ambipolar InAs nanowire transistors Device Research Conference - Conference Digest, Drc. 189-190. DOI: 10.1109/DRC.2012.6257046  0.769
2012 Kim S, Janes DB, Choi SY, Ju S. Nanoscale contacts between semiconducting nanowires and metallic graphenes Applied Physics Letters. 101. DOI: 10.1063/1.4745210  0.723
2011 Lee C, Srisungsitthisunti P, Park S, Kim S, Xu X, Roy K, Janes DB, Zhou C, Ju S, Qi M. Control of current saturation and threshold voltage shift in indium oxide nanowire transistors with femtosecond laser annealing. Acs Nano. 5: 1095-101. PMID 21222453 DOI: 10.1021/Nn102723W  0.718
2011 Razavieh A, Singh N, Paul A, Klimeck G, Janes D, Appenzeller J. A new method to achieve RF linearity in SOI nanowire MOSFETs Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. DOI: 10.1109/RFIC.2011.5940626  0.774
2011 Das SR, Delker CJ, Zakharov D, Chen YP, Sands TD, Janes DB. Room temperature device performance of electrodeposited InSb nanowire field effect transistors Applied Physics Letters. 98. DOI: 10.1063/1.3587638  0.824
2011 Kim S, Srisungsitthisunti P, Lee C, Xu M, Ye PD, Qi M, Xu X, Zhou C, Ju S, Janes DB. Selective contact anneal effects on indium oxide nanowire transistors using femtosecond laser Journal of Physical Chemistry C. 115: 17147-17153. DOI: 10.1021/Jp203342J  0.77
2010 Kim S, Kim S, Janes DB, Mohammadi S, Back J, Shim M. DC modeling and the source of flicker noise in passivated carbon nanotube transistors. Nanotechnology. 21: 385203. PMID 20798468 DOI: 10.1088/0957-4484/21/38/385203  0.617
2010 Kim S, Delker C, Chen P, Zhou C, Ju S, Janes DB. Oxygen plasma exposure effects on indium oxide nanowire transistors. Nanotechnology. 21: 145207. PMID 20234086 DOI: 10.1088/0957-4484/21/14/145207  0.812
2010 Mohammad A, Das SR, Chen YP, Sands TD, Janes DB. Electrodeposition of indium antimonide nanowires in porous anodic alumina membranes Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508899  0.439
2010 Scott A, Janes DB. Gold/Molecule/p+ Si devices: Variable temperature electronic transport Ieee Transactions On Nanotechnology. 9: 494-503. DOI: 10.1109/Tnano.2009.2030800  0.812
2010 Scott A, Risko C, Valley N, Ratner MA, Janes DB. Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes: Capacitance and simulation results Journal of Applied Physics. 107. DOI: 10.1063/1.3251466  0.817
2010 Bala S, Aithal RK, Derosa P, Janes D, Kuila D. Molecular rectifying diodes based on an Aluminum/4'-hydroxy-4-biphenyl carboxylic acid/p+-silicon junction Journal of Physical Chemistry C. 114: 20877-20884. DOI: 10.1021/Jp107850T  0.433
2009 Lee K, Nair PR, Scott A, Alam MA, Janes DB. Device considerations for development of conductance-based biosensors. Journal of Applied Physics. 105: 102046. PMID 24753627 DOI: 10.1063/1.3116630  0.818
2009 Janes D. Molecular electronics: rectifying current behaviours. Nature Chemistry. 1: 601-3. PMID 21378950 DOI: 10.1038/Nchem.429  0.319
2009 Kim S, Ju S, Back JH, Xuan Y, Ye PD, Shim M, Janes DB, Mohammadi S. Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 21: 564-8. PMID 21161982 DOI: 10.1002/Adma.200801032  0.681
2009 Franklin AD, Sayer RA, Sands TD, Fisher TS, Janes DB. Toward surround gates on vertical single-walled carbon nanotube devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 821-826. DOI: 10.1116/1.3054266  0.753
2009 Kim S, Lee C, Srisungsitthisunti P, Chen P, Zhou C, Xu X, Qi M, Mohammadi S, Ju S, Janes DB. Femtosecond laser annealing effects on indium oxide nanowire transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378138  0.654
2009 Kim S, Xu M, Yu L, Ye PD, Janes DB, Ju S, Mohammadi S. Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network Device Research Conference - Conference Digest, Drc. 117-118. DOI: 10.1109/DRC.2009.5354867  0.651
2009 Scott A, Janes DB. Characterization of electrochemically grafted molecular layers on silicon for electronic device applications Journal of Applied Physics. 105. DOI: 10.1063/1.3103337  0.789
2009 Carpenter PD, Lodha S, Janes DB, Walker AV. Characterization of gold contacts in GaAs-based molecular devices: Relating structure to electrical properties Chemical Physics Letters. 472: 220-223. DOI: 10.1016/J.Cplett.2009.03.019  0.799
2008 Lee K, Nair PR, Alam MA, Janes DB, Wampler HP, Zemlyanov DY, Ivanisevic A. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors. Journal of Applied Physics. 103: 114510-1145107. PMID 19484151 DOI: 10.1063/1.2936853  0.708
2008 Wampler HP, Zemlyanov DY, Lee K, Janes DB, Ivanisevic A. Mixed adlayer of alkanethiol and peptide on GaAs(100): quantitative characterization by X-ray photoelectron spectroscopy. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 3164-70. PMID 18275237 DOI: 10.1021/La703543G  0.661
2008 Wang W, Scott A, Gergel-Hackett N, Hacker CA, Janes DB, Richter CA. Probing molecules in integrated silicon-molecule-metal junctions by inelastic tunneling spectroscopy. Nano Letters. 8: 478-84. PMID 18189437 DOI: 10.1021/Nl0725289  0.795
2008 Ju S, Li J, Liu J, Chen PC, Ha YG, Ishikawa F, Chang H, Zhou C, Facchetti A, Janes DB, Marks TJ. Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry. Nano Letters. 8: 997-1004. PMID 18069874 DOI: 10.1021/Nl072538+  0.587
2008 Hang Q, Wang F, Carpenter PD, Zemlyanov D, Zakharov D, Stach EA, Buhro WE, Janes DB. Role of molecular surface passivation in electrical transport properties of InAs nanowires. Nano Letters. 8: 49-55. PMID 18052229 DOI: 10.1021/Nl071888T  0.797
2008 Kumar MJ, Reed MA, Amaratunga GAJ, Cohen GM, Janes DB, Lieber CM, Meyyappan M, Wernersson LE, Wang KL, Chau RS, Kamins TI, Lundstrom M, Yu B, Zhou C. Guest editorial special issue on nanowire transistors: Modeling, device design, and technology Ieee Transactions On Nanotechnology. 7: 643-650. DOI: 10.1109/Tnano.2008.2010023  0.393
2008 Kumar MJ, Reed MA, Amaratunga GAJ, Cohen GM, Janes DB, Lieber CM, Meyyappan M, Wernersson LE, Wang KL, Chau RS, Kamins TI, Lundstrom M, Yu B, Zhou C. Special issue on nanowire transistors: Modeling, device design, and technology Ieee Transactions On Electron Devices. 55: 2813-2819. DOI: 10.1109/Ted.2008.2006781  0.425
2008 Sun X, Yu B, Ng G, Meyyappan M, Ju S, Janes DB. Germanium antimonide phase-change nanowires for memory applications Ieee Transactions On Electron Devices. 55: 3131-3135. DOI: 10.1109/Ted.2008.2005160  0.61
2008 Smith JT, Hang Q, Franklin AD, Janes DB, Sands TD. Highly ordered diamond and hybrid triangle-diamond patterns in porous anodic alumina thin films Applied Physics Letters. 93. DOI: 10.1063/1.2957991  0.666
2008 Ju S, Chen P, Zhou C, Ha YG, Facchetti A, Marks TJ, Kim SK, Mohammadi S, Janes DB. 1f noise of SnO2 nanowire transistors Applied Physics Letters. 92. DOI: 10.1063/1.2947586  0.648
2008 Lee K, Lu G, Facchetti A, Janes DB, Marks TJ. Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2899965  0.732
2008 Franklin AD, Janes DB, Claussen JC, Fisher TS, Sands TD. Independently addressable fields of porous anodic alumina embedded in Si O2 on Si Applied Physics Letters. 92. DOI: 10.1063/1.2831002  0.743
2008 Ju S, Kim S, Mohammadi S, Janes DB, Ha YG, Facchetti A, Marks TJ. Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements Applied Physics Letters. 92. DOI: 10.1063/1.2830005  0.654
2008 Scott A, Hacker CA, Janes DB. In situ structural characterization of metal-molecule-silicon junctions using backside infrared spectroscopy Journal of Physical Chemistry C. 112: 14021-14026. DOI: 10.1021/Jp801715S  0.77
2007 Ju S, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P, Zhou C, Marks TJ, Janes DB. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nature Nanotechnology. 2: 378-84. PMID 18654311 DOI: 10.1038/Nnano.2007.151  0.653
2007 Mahapatro AK, Janes DB. Electrical readouts of single and few molecule systems in metal-molecule-metal device structures. Journal of Nanoscience and Nanotechnology. 7: 2134-8. PMID 17655006  0.344
2007 Hang Q, Maschmann MR, Fisher TS, Janes DB. Assemblies of carbon nanotubes and unencapsulated sub-10-nm gold nanoparticles. Small (Weinheim An Der Bergstrasse, Germany). 3: 1266-71. PMID 17487897 DOI: 10.1002/Smll.200600703  0.52
2007 Mahapatro AK, Janes DB. Electrical readouts of single and few molecule systems in metal-molecule-metal device structures Journal of Nanoscience and Nanotechnology. 7: 2134-2138. DOI: 10.1166/jnn.2007.783  0.343
2007 Franklin AD, Maschmann MR, DaSilva M, Janes DB, Fisher TS, Sands TD. In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 343-347. DOI: 10.1116/1.2647379  0.76
2007 Ju S, Mills AK, Hang Q, Elliott DS, Janes DB. Negative resist behavior of neutral sodium atoms deposited on self-assembled monolayers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25. DOI: 10.1116/1.2431351  0.557
2007 Ju S, Lu G, Chen PC, Facchetti A, Zhou C, Marks TJ, Janes DB. High performance in2O3 nanowire transistors using organic gate nanodielectrics 65th Drc Device Research Conference. 169-170. DOI: 10.1109/DRC.2007.4373702  0.586
2007 Ju S, Lee K, Yoon MH, Facchetti A, Marks TJ, Janes DB. High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: Effects of metal contacts and ozone treatment Nanotechnology. 18. DOI: 10.1088/0957-4484/18/15/155201  0.818
2007 Yu B, Ju S, Sun X, Ng G, Nguyen TD, Meyyappan M, Janes DB. Indium selenide nanowire phase-change memory Applied Physics Letters. 91. DOI: 10.1063/1.2793505  0.557
2007 Scott A, Janes DB, Risko C, Ratner MA. Fabrication and characterization of metal-molecule-silicon devices Applied Physics Letters. 91. DOI: 10.1063/1.2750516  0.811
2007 Franklin AD, Smith JT, Sands T, Fisher TS, Choi KS, Janes DB. Controlled decoration of single-walled carbon nanotubes with Pd nanocubes Journal of Physical Chemistry C. 111: 13756-13762. DOI: 10.1021/Jp074411E  0.709
2006 Maschmann MR, Franklin AD, Scott A, Janes DB, Sands TD, Fisher TS. Lithography-free in situ Pd contacts to templated single-walled carbon nanotubes. Nano Letters. 6: 2712-7. PMID 17163693 DOI: 10.1021/Nl061652+  0.775
2006 Mahapatro AK, Ghosh S, Janes DB. Nanometer scale electrode separation (nanogap) using electromigration at room temperature Ieee Transactions On Nanotechnology. 5: 232-236. DOI: 10.1109/Tnano.2006.874053  0.399
2006 Saha SK, Dasilva M, Hang Q, Sands T, Janes DB. A nanocapacitor with giant dielectric permittivity Nanotechnology. 17: 2284-2288. DOI: 10.1088/0957-4484/17/9/036  0.511
2006 Ju S, Janes DB, Lu G, Facchetti A, Marks TJ. Effects of bias stress on ZnO nanowire field-effect transistors fabricated with organic gate nanodielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2378445  0.632
2006 Ju S, Lee K, Janes DB, Dwivedi RC, Baffour-Awuah H, Wilkins R, Yoon M, Facchetti A, Marks TJ. Erratum: “Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics” [Appl. Phys. Lett. 89, 073510 (2006)] Applied Physics Letters. 89: 139902. DOI: 10.1063/1.2356893  0.761
2006 Ju S, Lee K, Janes DB, Dwivedi RC, Baffour-Awuah H, Wilkins R, Yoon MH, Facchetti A, Mark TJ. Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2336744  0.77
2006 Lodha S, Janes DB. Metal/molecule/p-type GaAs heterostructure devices Journal of Applied Physics. 100. DOI: 10.1063/1.2210569  0.731
2006 Mahapatro AK, Scott A, Manning A, Janes DB. Gold surface with sub-nm roughness realized by evaporation on a molecular adhesion monolayer Applied Physics Letters. 88. DOI: 10.1063/1.2183820  0.795
2006 Lodha S, Carpenter P, Janes DB. Effect of contact properties on current transport in metal/molecule/GaAs devices Journal of Applied Physics. 99. DOI: 10.1063/1.2164530  0.829
2005 Ju S, Lee K, Janes DB, Yoon MH, Facchetti A, Marks TJ. Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics. Nano Letters. 5: 2281-6. PMID 16277468 DOI: 10.1021/Nl051658J  0.805
2005 Ghosh S, Halimun H, Mahapatro AK, Choi J, Lodha S, Janes D. Device structure for electronic transport through individual molecules using nanoelectrodes Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2140470  0.7
2004 Lodha S, Janes DB. Enhanced current densities in Au/molecule/GaAs devices Applied Physics Letters. 85: 2809-2811. DOI: 10.1063/1.1799235  0.723
2004 Choi J, Lee K, Janes DB. Nanometer scale gap made by conventional microscale fabrication: Step junction Nano Letters. 4: 1699-1703. DOI: 10.1021/Nl049113X  0.728
2003 Lodha S, Choi J, Bhattacharya S, Janes DB. Metal-molecule-semiconductor heterostructures for nano-device applications Proceedings of the Ieee Conference On Nanotechnology. 1: 311-314. DOI: 10.1109/NANO.2003.1231780  0.388
2003 Lodha S, Janes DB. Metal-molecule-semiconductor heterostructures for nanoelectronic applications 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 446-447. DOI: 10.1109/ISDRS.2003.1272177  0.309
2003 Janes DB, Ghosh S, Choi J, Lodha S, Bhattacharya S. Circuit characteristics of molecular electronic components Proceedings of the International Conference On Application-Specific Systems, Architectures and Processors. 2003: 125-131. DOI: 10.1109/ASAP.2003.1212836  0.321
2003 Lodha S, Janes DB, Chen NP. Unpinned interface Fermi-level in Schottky contacts to n-GaAs capped with low-temperature-grown GaAs; experiments and modeling using defect state distributions Journal of Applied Physics. 93: 2772-2779. DOI: 10.1063/1.1536734  0.666
2002 Wei L, Zhang R, Roy K, Chen Z, Janes DB. Vertically integrated SOI circuits for low-power and high-performance applications Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 10: 351-362. DOI: 10.1109/Tvlsi.2002.1043338  0.385
2002 Lodha S, Janes DB, Chen NP. Fermi level unpinning in ex situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs Applied Physics Letters. 80: 4452-4454. DOI: 10.1063/1.1484243  0.682
2002 Howell S, Kuila D, Kasibhatla B, Kubiak CP, Janes D, Reifenberger R. Molecular electrostatics of conjugated self-assembled monolayers on Au(111) using electrostatic force microscopy Langmuir. 18: 5120-5125. DOI: 10.1021/La0157014  0.325
2002 McNally H, Janes DB, Kasibhatla B, Kubiak CP. Electrostatic investigation into the bonding of poly(phenylene) thiols to gold Superlattices and Microstructures. 31: 239-245. DOI: 10.1006/Spmi.2002.1027  0.316
2001 Ueng HJ, Chen NP, Janes DB, Webb KJ, McInturff DT, Melloch MR. Temperature-dependent behavior of low-temperature-grown GaAs nonalloyed ohmic contacts Journal of Applied Physics. 90: 5637-5641. DOI: 10.1063/1.1410324  0.403
2000 Howell S, Kuila D, Ghosh AW, Rakshit T, McNally H, Janes D, Datta S, Kashibhatla B, Kubiak C, Reifenberger R. Surface Potentials of Conjugated Molecules on Metal Surfaces: Measurements Using Electrostatic Force Microscopy and Calculations using a Preliminary Physically-Based Model. Mrs Proceedings. 636. DOI: 10.1557/Proc-636-D9.38.1  0.319
2000 Bashir R, Lee S, Guo D, Pingle M, Bergstrom D, Mcnally HA, Janes D. Basic: Bio-Inspired Assembly of Semiconductor Integrated Circuits Mrs Proceedings. 636. DOI: 10.1557/Proc-636-D11.7.1  0.458
2000 Chen N, Ueng HJ, Janes DB, Woodall JM, Melloch MR. A quantitative conduction model for a low-resistance nonalloyed ohmic contact structure utilizing low-temperature-grown GaAs Journal of Applied Physics. 88: 309-315. DOI: 10.1063/1.373658  0.391
2000 Liu J, Lee T, Janes DB, Walsh BL, Melloch MR, Woodall JM, Reifenberger R, Andres RP. Guided self-assembly of Au nanocluster arrays electronically coupled to semiconductor device layers Applied Physics Letters. 77: 373-375. DOI: 10.1063/1.126980  0.421
2000 Lee T, Chen NP, Liu J, Andres RP, Janes DB, Chen EH, Melloch MR, Woodall JM, Reifenberger R. Ohmic nanocontacts to GaAs using undoped and p-doped layers of low-temperature-grown GaAs Applied Physics Letters. 76: 212-214. DOI: 10.1063/1.125705  0.373
2000 Janes DB, Lee T, Liu J, Batistuta M, Chen N, Walsh BL, Andres RP, Chen E-, Melloch MR, Woodall JM, Reifenberger R. Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications Journal of Electronic Materials. 29: 565-569. DOI: 10.1007/S11664-000-0046-Z  0.486
2000 Janes DB, Batistuta M, Datta S, Melloch MR, Andres RP, Liu J, Chen NP, Lee T, Reifenberger R, Chen EH, Woodall JM. Interface and contact structures for nanoelectronic devices using assemblies of metallic nanoclusters, conjugated organic molecules and chemically stable semiconductor layers Superlattices and Microstructures. 27: 555-563. DOI: 10.1006/Spmi.2000.0882  0.459
1999 Janes DB, Kolagunta VR, Batistuta M, Walsh BL, Andres RP, Liu J, Dicke J, Lauterbach J, Pletcher T, Chen EH, Melloch MR, Peckham EL, Ueng HJ, Woodall JM, Lee T, et al. Nanoelectronic device applications of a chemically stable GaAs structure Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1773. DOI: 10.1116/1.590824  0.463
1999 Lee T, Liu J, Janes DB, Kolagunta VR, Dicke J, Andres RP, Lauterbach J, Melloch MR, McInturff D, Woodall JM, Reifenberger R. An ohmic nanocontact to GaAs Applied Physics Letters. 74: 2869-2871. DOI: 10.1063/1.124041  0.347
1997 Kolagunta VR, Janes DB, Melloch MR, Youtsey C. Sidewall gated double well quasi-one-dimensional resonant tunneling transistors Applied Physics Letters. 71: 3379-3381. DOI: 10.1063/1.120342  0.415
1997 Ueng HJ, Kolagunta VR, Janes DB, Webb KJ, McInturff DT, Melloch MR. Annealing stability and device application of nonalloyed ohmic contacts using a low temperature grown GaAs cap on thin n+ GaAs layers Applied Physics Letters. 71: 2496-2498. DOI: 10.1063/1.120099  0.426
1997 Przadka A, Webb KJ, Janes DB, Liu HC, Wasilewski ZR. Microwave measurement of shot noise in resonant tunneling diodes Applied Physics Letters. 71: 530-532. DOI: 10.1063/1.119599  0.38
1997 Cohen EB, Webb KJ, Janes DB, Melloch MR. Real space transfer in a velocity modulated transistor structure Applied Physics Letters. 70: 2864-2866. DOI: 10.1063/1.119026  0.308
1997 Mokhlesi N, Jazayeri R, Janes DB. A solution for current–voltage characteristics of multiple coupled mesoscopic tunnel junctions Superlattices and Microstructures. 21: 15-19. DOI: 10.1006/Spmi.1996.0135  0.349
1996 Janes D, Hong S, Kolagunta VR, McInturff D, NG T, Reifenberger R, West S, Woodall J. Chemically Stable Semiconductor Surface Layers Using Low-Temperature Grown GaAs Mrs Proceedings. 448. DOI: 10.1557/Proc-448-3  0.382
1996 Andres RP, Bielefeld JD, Henderson JI, Janes DB, Kolagunta VR, Kubiak CP, Mahoney WJ, Osifchin RG. Self-assembly of a two-dimensional superlattice of molecularly linked metal clusters Science. 273: 1690-1693. DOI: 10.1126/Science.273.5282.1690  0.33
1996 Andres RP, Datta S, Dorogi M, Gomez J, Henderson JI, Janes DB, Kolagunta VR, Kubiak CP, Mahoney W, Osifchin RF, Reifenberger R, Samanta MP, Tian W. Room temperature Coulomb blockade and Coulomb staircase from self-assembled nanostructures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 1178-1183. DOI: 10.1116/1.580262  0.323
1996 Roychowdhury VP, Janes DB, Bandyopadhyay S, Wang X. Collective computational activity in self-assembled arrays of quantum dots: A novel neuromorphic architecture for nanoelectronics Ieee Transactions On Electron Devices. 43: 1688-1699. DOI: 10.1109/16.536815  0.369
1996 Melloch MR, Nolte DD, Woodall JM, Chang JCP, Janes DB, Harmon ES. Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems Critical Reviews in Solid State and Materials Sciences. 21: 189-263. DOI: 10.1080/10408439608241256  0.304
1996 Kolagunta VR, Janes DB, Chen GL, Webb KJ, Melloch MR, Youtsey C. Self‐aligned sidewall gated resonant tunneling transistors Applied Physics Letters. 69: 374-376. DOI: 10.1063/1.118065  0.39
1996 Ng T, Janes DB, McInturff D, Woodall JM. Inhibited oxidation in low‐temperature grown GaAs surface layers observed by photoelectron spectroscopy Applied Physics Letters. 69: 3551-3553. DOI: 10.1063/1.117242  0.318
1995 Janes DB, Webb KJ, Carroll MS, Starnes GE, Huang KC, Shenoy J, Melloch MR. Direct current and microwave characterization of integrated resonant tunneling diodes Journal of Applied Physics. 78: 6616-6625. DOI: 10.1063/1.360483  0.441
1995 Hong S, Reifenberger R, Janes DB, McInturff D, Woodall JM. Stability of a low-temperature grown GaAs surface layer following air exposure using tunneling microscopy Applied Physics Letters. 2258. DOI: 10.1063/1.115877  0.337
1995 Janes DB, Kolagunta VR, Osifchin RG, Bielefeld JD, Andres RP, Henderson JI, Kubiak CP. Electronic conduction through 2D arrays of nanometer diameter metal clusters Superlattices and Microstructures. 18: 275. DOI: 10.1006/Spmi.1995.1112  0.338
1995 Cohen EB, Janes DB, Webb KJ, Shenoy JN, Woodall JM, Melloch MR. 2DEG/low-temperature-grown GaAs dual channel heterostructure transistor Superlattices and Microstructures. 17: 345-349. DOI: 10.1006/Spmi.1995.1061  0.395
1995 Kolagunta VR, Janes DB, Chen GL, Webb KJ, Melloch MR. Vertical three-terminal structures in semiconductor heterostructure quantum wells using a novel sidewall gating technique Superlattices and Microstructures. 17: 339-343. DOI: 10.1006/Spmi.1995.1060  0.428
1994 Huang K, Carroll M, Starnes G, Lake R, Janes D, Webb K, Melloch M. Numerically generated resonant tunneling diode equivalent circuit parameters Journal of Applied Physics. 76: 3850-3857. DOI: 10.1063/1.357389  0.336
1992 Janes DB, Hoskins MJ. Response Characteristics of Trapping Loss in Acoustic Charge Transport Devices Ieee Transactions On Electron Devices. 39: 2452-2458. DOI: 10.1109/16.163457  0.347
1989 Janes D, Hoskins MJ. Experimental and theoretical characterization of trap-related transfer loss in acoustic charge transport devices Journal of Applied Physics. 66: 3883-3891. DOI: 10.1063/1.344053  0.352
1989 Janes D, Hoskins MJ, Brophy MJ. Transfer loss in acoustic charge transport devices due to electron traps induced by proton bombardment Journal of Applied Physics. 66: 6150-6157. DOI: 10.1063/1.343598  0.397
1981 Adler R, Janes D, Hunsinger BJ, Datta S. Acoustoelectric measurement of low carrier mobilities in highly resistive films Applied Physics Letters. 38: 102-103. DOI: 10.1063/1.92257  0.333
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