Year |
Citation |
Score |
2020 |
Merrill K, Saraniti M. Nonlinear Electro-Thermal Monte Carlo Device Simulation Journal of Heat Transfer-Transactions of the Asme. 142. DOI: 10.1115/1.4045305 |
0.428 |
|
2020 |
Sabatti FFM, Goodnick SM, Saraniti M. Particle-Based Modeling of Electron–Phonon Interactions Journal of Heat Transfer-Transactions of the Asme. 142. DOI: 10.1115/1.4045137 |
0.311 |
|
2019 |
Latorre-Rey AD, Merrill K, Albrecht JD, Saraniti M. Assessment of Self-Heating Effects Under Lateral Scaling of GaN HEMTs Ieee Transactions On Electron Devices. 66: 908-916. DOI: 10.1109/Ted.2018.2888812 |
0.424 |
|
2018 |
Rey ADL, Albrecht JD, Saraniti M. A $\Pi$ -Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs Ieee Transactions On Electron Devices. 65: 4263-4270. DOI: 10.1109/Ted.2018.2863746 |
0.47 |
|
2017 |
Sabatti FFM, Goodnick SM, Saraniti M. Simulation of Phonon Transport in Semiconductors Using a Population-Dependent Many-Body Cellular Monte Carlo Approach Journal of Heat Transfer-Transactions of the Asme. 139: 32002. DOI: 10.1115/1.4035042 |
0.389 |
|
2017 |
Soligo R, Sabatti F, Chowdhury S, Saraniti M. Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations Ieee Transactions On Electron Devices. 64: 4442-4449. DOI: 10.1109/Ted.2017.2756085 |
0.443 |
|
2017 |
Latorre-Rey AD, Sabatti FFM, Albrecht JD, Saraniti M. Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors Applied Physics Letters. 111: 13506. DOI: 10.1063/1.4991665 |
0.395 |
|
2016 |
Hathwar R, Saraniti M, Goodnick SM. Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation Journal of Applied Physics. 120. DOI: 10.1063/1.4959881 |
0.362 |
|
2015 |
Popescu B, Popescu D, Saraniti M, Lugli P. Full-band 3-D Monte Carlo simulation of InAs nanowires and high frequency analysis Ieee Transactions On Electron Devices. 62: 1848-1854. DOI: 10.1109/Ted.2015.2424403 |
0.484 |
|
2015 |
Soligo R, Chowdhury S, Gupta G, Mishra U, Saraniti M. The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor Ieee Electron Device Letters. 36: 669-671. DOI: 10.1109/Led.2015.2436922 |
0.406 |
|
2014 |
Soligo R, Saraniti M, Goodnick SM. Terahertz devices and device modeling Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2049599 |
0.422 |
|
2014 |
Lepkowski W, Wilk SJ, Parsi A, Saraniti M, Ferry D, Thornton TJ. Avalanche breakdown in SOI MESFETs Solid-State Electronics. 91: 78-80. DOI: 10.1016/J.Sse.2013.10.003 |
0.39 |
|
2012 |
Goodnick SM, Saraniti M. Modeling and simulation of terahertz devices Ieee Microwave Magazine. 13: 36-44. DOI: 10.1109/Mmm.2012.2216098 |
0.308 |
|
2011 |
Guerra D, Marino FA, Goodnick S, Ferry D, Saraniti M. Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations International Journal of High Speed Electronics and Systems. 20: 423-430. DOI: 10.1142/S0129156411006714 |
0.451 |
|
2011 |
Guerra D, Saraniti M, Ferry DK, Goodnick SM, Marino FA. Carrier dynamics investigation on passivation dielectric constant and RF performance of millimeter-wave power GaN HEMTs Ieee Transactions On Electron Devices. 58: 3876-3884. DOI: 10.1109/Ted.2011.2164407 |
0.435 |
|
2010 |
Guerra D, Saraniti M, Faralli N, Ferry DK, Goodnick SM, Marino FA. Comparison of N- and Ga-face GaN HEMTs through cellular Monte Carlo simulations Ieee Transactions On Electron Devices. 57: 3348-3354. DOI: 10.1109/Ted.2010.2076151 |
0.428 |
|
2010 |
Marino FA, Saraniti M, Faralli N, Ferry DK, Goodnick SM, Guerra D. Emerging N-face GaN HEMT technology: A cellular Monte Carlo study Ieee Transactions On Electron Devices. 57: 2579-2586. DOI: 10.1109/Ted.2010.2058791 |
0.448 |
|
2010 |
Marino FA, Faralli N, Palacios T, Ferry DK, Goodnick SM, Saraniti M. Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors Ieee Transactions On Electron Devices. 57: 353-360. DOI: 10.1109/Ted.2009.2035024 |
0.496 |
|
2010 |
Guerra D, Akis R, Marino FA, Ferry DK, Goodnick SM, Saraniti M. Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs Ieee Electron Device Letters. 31: 1217-1219. DOI: 10.1109/Led.2010.2066954 |
0.461 |
|
2010 |
Marino FA, Cullen DA, Smith DJ, McCartney MR, Saraniti M. Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography Journal of Applied Physics. 107: 054516. DOI: 10.1063/1.3311555 |
0.476 |
|
2010 |
Joshi P, Smolyanitsky A, Petrossian L, Goryll M, Saraniti M, Thornton TJ. Field effect modulation of ionic conductance of cylindrical silicon-on-insulator nanopore array Journal of Applied Physics. 107. DOI: 10.1063/1.3298468 |
0.342 |
|
2010 |
Marino FA, Guerra D, Goodnick S, Ferry D, Saraniti M. RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2445-2449. DOI: 10.1002/Pssc.200983887 |
0.511 |
|
2010 |
Akis R, Faralli N, Goodnick SM, Ferry DK, Saraniti M. Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2502-2505. DOI: 10.1002/Pssc.200983856 |
0.37 |
|
2009 |
Yamakawa S, Akis R, Faralli N, Saraniti M, Goodnick SM. Rigid ion model of high field transport in GaN. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 174206. PMID 21825410 DOI: 10.1088/0953-8984/21/17/174206 |
0.375 |
|
2009 |
Akis R, Faralli N, Ferry DK, Goodnick SM, Phatak KA, Saraniti M. Ballistic transport in InP-based HEMTs Ieee Transactions On Electron Devices. 56: 2935-2944. DOI: 10.1109/Ted.2009.2033167 |
0.433 |
|
2009 |
Smolyanitsky A, Saraniti M. Silicon nanopores as bioelectronic devices: a simulation study Journal of Computational Electronics. 8: 90-97. DOI: 10.1007/S10825-009-0275-1 |
0.451 |
|
2008 |
Akis R, Ayubi-Moak JS, Ferry DK, Goodnick SM, Faralli N, Saraniti M. Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 384201. PMID 21693809 DOI: 10.1088/0953-8984/20/38/384201 |
0.435 |
|
2008 |
Akis R, Ayubi-Moak JS, Faralli N, Ferry DK, Goodnick SM, Saraniti M. The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length Ieee Electron Device Letters. 29: 306-308. DOI: 10.1109/Led.2008.918391 |
0.441 |
|
2008 |
Vitobello F, Faralli N, Yamakawa S, Goodnick SM, Saraniti M. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT Journal of Computational Electronics. 7: 244-247. DOI: 10.1007/S10825-008-0215-5 |
0.496 |
|
2008 |
Ayubi-Moak JS, Akis R, Ferry DK, Goodnick S, Faralli N, Saraniti M. Towards the global modeling of InGaAs-based pseudomorphic HEMTs Journal of Computational Electronics. 7: 187-191. DOI: 10.1007/S10825-008-0207-5 |
0.473 |
|
2008 |
Ayubi-Moak JS, Akis R, Saraniti M, Ferry DK, Goodnick SM. Hot electron effects in ultra-short gate length InAs/InAlAs HEMTs Physica Status Solidi (C). 5: 135-138. DOI: 10.1002/Pssc.200776577 |
0.473 |
|
2007 |
Goodnick SM, Saraniti M. Cellular Monte Carlo simulation of high field transport in semiconductor devices International Journal of High Speed Electronics and Systems. 17: 465-473. DOI: 10.1142/S0129156407004655 |
0.518 |
|
2007 |
Ayubi-Moak JS, Ferry DK, Goodnick SM, Akis R, Saraniti M. Simulation of Ultrasubmicrometer-Gate $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As/In}_{0.75}\hbox{Ga}_{0.25}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As/InP}$ Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator Ieee Transactions On Electron Devices. 54: 2327-2338. DOI: 10.1109/Ted.2007.902902 |
0.546 |
|
2007 |
Marreiro D, Saraniti M, Aboud S. Brownian dynamics simulation of charge transport in ion channels Journal of Physics: Condensed Matter. 19: 215203. DOI: 10.1088/0953-8984/19/21/215203 |
0.72 |
|
2007 |
Marreiro D, Tang Y, Aboud S, Jakobsson E, Saraniti M. Improving the efficiency of BD algorithms for biological systems simulations Journal of Computational Electronics. 6: 377-380. DOI: 10.1007/S10825-006-0129-Z |
0.714 |
|
2006 |
Beysserie S, Branlard J, Aboud S, Goodnick SM, Saraniti M. Comparative analysis of SOI and GOI MOSFETs Ieee Transactions On Electron Devices. 53: 2545-2550. DOI: 10.1109/Ted.2006.882272 |
0.727 |
|
2006 |
Faralli N, Markandeya H, Branlard J, Saraniti M, Goodnick SM, Ferry DK. Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors Journal of Computational Electronics. 5: 483-486. DOI: 10.1007/S10825-006-0061-2 |
0.507 |
|
2006 |
Saraniti M, Aboud S, Branlard J, Goodnick SM. Particle-based simulation: An algorithmic perspective Journal of Computational Electronics. 5: 405-410. DOI: 10.1007/S10825-006-0030-9 |
0.461 |
|
2006 |
Ayubi-Moak JS, Goodnick SM, Saraniti M. Global modeling of high frequency devices Journal of Computational Electronics. 5: 415-418. DOI: 10.1007/S10825-006-0028-3 |
0.416 |
|
2006 |
Saraniti M, Aboud S, Eisenberg R. The Simulation of Ionic Charge Transport in Biological Ion Channels: An Introduction to Numerical Methods Reviews in Computational Chemistry. 22: 229-293. DOI: 10.1002/0471780367.Ch4 |
0.431 |
|
2005 |
Wilk SJ, Petrossian L, Goryll M, Thornton TJ, Goodnick SM, Tang JM, Eisenberg RS, Saraniti M, Wong D, Schmidt JJ, Montemagno CD. Ion channels on silicon E-Journal of Surface Science and Nanotechnology. 3. DOI: 10.1380/Ejssnt.2005.184 |
0.318 |
|
2005 |
Yamakawa S, Goodnick SM, Branlard J, Saraniti M. Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo Physica Status Solidi C: Conferences. 2: 2573-2576. DOI: 10.1002/Pssc.200461525 |
0.401 |
|
2004 |
Goryll M, Wilk S, Laws GM, Goodnick SM, Thornton TJ, Saraniti M, Tang JM, Eisenberg RS. Ion Channel Sensor on a Silicon Support Mrs Proceedings. 820. DOI: 10.1557/Proc-820-O7.2 |
0.331 |
|
2004 |
Branlard J, Aboud S, Osuch P, Goodnick SM, Saraniti M. Frequency Analysis of Semiconductor Devices Using Full-Band Cellular Monte Carlo Simulations Monte Carlo Methods and Applications. 10: 227-233. DOI: 10.1515/Mcma.2004.10.3-4.227 |
0.491 |
|
2004 |
Goodnick SM, Saraniti M, Vasileska D, Aboud S. Particle-based methods in computational electronics Ieee Potentials. 23: 12-16. DOI: 10.1109/Mp.2004.1301239 |
0.526 |
|
2004 |
Yamakawa S, Aboud S, Saraniti M, Goodnick SM. Influence of the electron-phonon interaction on electron transport in wurtzite GaN Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/156 |
0.333 |
|
2004 |
Aboud S, Saraniti M, Goodnick S, Brodschelm A, Leitenstorfer A. Full-band Monte Carlo simulations of photo excitation in silicon diode structures Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/101 |
0.498 |
|
2004 |
Wilk SJ, Goryll M, Laws GM, Goodnick SM, Thornton TJ, Saraniti M, Tang J, Eisenberg RS. Teflon ™-coated silicon apertures for supported lipid bilayer membranes Applied Physics Letters. 85: 3307-3309. DOI: 10.1063/1.1805712 |
0.303 |
|
2004 |
Aboud S, Marreiro D, Saraniti M, Eisenberg R. A poisson P3M force field scheme for particle-based simulations of ionic liquids Journal of Computational Electronics. 3: 117-133. DOI: 10.1007/S10825-004-0316-8 |
0.72 |
|
2004 |
Beysserie S, Aboud S, Goodnick S, Thornton T, Saraniti M. Full-band particle-based simulation of SOI and GOI MOSFETs Physica Status Solidi (B) Basic Research. 241: 2297-2302. DOI: 10.1002/Pssb.200404940 |
0.733 |
|
2003 |
Yamakawa S, Aboud S, Saraniti M, Goodnick SM. Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method Journal of Computational Electronics. 2: 481-485. DOI: 10.1023/B:Jcel.0000011475.74817.6E |
0.501 |
|
2003 |
Aboud S, Saraniti M, Eisenberg R. Computational Issues in Modeling Ion Transport in Biological Channels: Self-Consistent Particle-Based Simulations Journal of Computational Electronics. 2: 239-243. DOI: 10.1023/B:Jcel.0000011431.17843.A6 |
0.466 |
|
2003 |
Branlard J, Aboud S, Goodnick S, Saraniti M. Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations Journal of Computational Electronics. 2: 213-217. DOI: 10.1023/B:Jcel.0000011427.63034.4E |
0.472 |
|
2003 |
Ayubi-Moak JS, Goodnick S, Aboud SJ, Saraniti M, El-Ghazaly S. Coupling Maxwell's Equations to Full Band Particle-Based Simulators Journal of Computational Electronics. 2: 183-190. DOI: 10.1023/B:Jcel.0000011422.05617.F1 |
0.452 |
|
2003 |
Saraniti M, Tang J, Goodnick SM, Wigger SJ. Numerical challenges in particle-based approaches for the simulation of semiconductor devices Mathematics and Computers in Simulation. 62: 501-508. DOI: 10.1016/S0378-4754(02)00229-X |
0.521 |
|
2003 |
Goryll M, Wilk S, Laws GM, Thornton T, Goodnick S, Saraniti M, Tang J, Eisenberg RS. Silicon-based ion channel sensor Superlattices and Microstructures. 34: 451-457. DOI: 10.1016/J.Spmi.2004.03.041 |
0.327 |
|
2002 |
Formicone G, Saraniti M, Vasileska D, Ferry D. Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer Ieee Transactions On Electron Devices. 49: 125-132. DOI: 10.1109/16.974759 |
0.397 |
|
2002 |
Saraniti M, Hu Y, Goodnick SM. Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP Vlsi Design. 15: 743-750. DOI: 10.1080/1065514021000012354 |
0.474 |
|
2002 |
Wigger S, Saraniti M, Goodnick S, Leitenstorfer A. Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors Journal of Computational Electronics. 1: 475-480. DOI: 10.1023/A:1022945122145 |
0.519 |
|
2002 |
Formicone G, Saraniti M, Ferry DK. Journal of Computational Electronics. 1: 251-255. DOI: 10.1023/A:1020793912240 |
0.391 |
|
2002 |
Saraniti M, Tang J, Goodnick S, Wigger S. Parallel Approaches for Particle-Based Simulation of Charge Transport in Semiconductors Journal of Computational Electronics. 1: 215-218. DOI: 10.1023/A:1020777508605 |
0.45 |
|
2002 |
Saraniti M, Hu Y, Goodnick SM, Wigger SJ. Overshoot velocity in ultra-broadband THz studies in GaAs and InP Physica B: Condensed Matter. 314: 162-165. DOI: 10.1016/S0921-4526(01)01377-1 |
0.442 |
|
2001 |
Wigger SJ, Goodnick SM, Saraniti M. Hybrid Particle-based Full-band Analysis of Ultra-small MOS Vlsi Design. 13: 125-129. DOI: 10.1155/2001/94360 |
0.468 |
|
2000 |
Saraniti M, Goodnick SM. Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors Ieee Transactions On Electron Devices. 47: 1909-1916. DOI: 10.1109/16.870571 |
0.397 |
|
2000 |
Wigger SJ, Goodnick SM, Saraniti M. Full-band CA/Monte Carlo modeling of ultrasmall FETs Superlattices and Microstructures. 27: 417-420. DOI: 10.1006/Spmi.2000.0860 |
0.394 |
|
1998 |
Saraniti M, Zandler G, Formicone GF, Goodnick SM. Cellular Automata Studies of Vertical Silicon Devices Vlsi Design. 8: 111-115. DOI: 10.1155/1998/89897 |
0.422 |
|
1998 |
Zandler G, Oberhuber R, Liebig D, Vogl P, Saraniti M, Lugli P. Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes Vlsi Design. 8: 93-98. DOI: 10.1155/1998/39048 |
0.36 |
|
1998 |
Saraniti M, Zandler G, Formicone G, Wigger S, Goodnick S. Cellular automata simulation of nanometre-scale MOSFETs Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/050 |
0.441 |
|
1996 |
Saraniti M, Rein A, Zandler G, Vogl P, Lugli P. An efficient multigrid Poisson solver for device simulations Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 15: 141-150. DOI: 10.1109/43.486661 |
0.489 |
|
1994 |
Gruzinskis V, Starikov E, Shiktorov P, Reggiani L, Saraniti M, Varani L. Response functions in submicrometre n+nn+ diode generators Semiconductor Science and Technology. 9: 564-566. DOI: 10.1088/0268-1242/9/5S/044 |
0.326 |
|
1993 |
Gruzhinskis V, Starikov E, Shiktorov P, Reggiani L, Saraniti M, Varani L. Hydrodynamic analysis of DC and AC hot-carrier transport in semiconductors Semiconductor Science and Technology. 8: 1283-1290. DOI: 10.1088/0268-1242/8/7/016 |
0.332 |
|
1992 |
Zanoni E, Tedesco C, Manfredi M, Saraniti M, Lugli P. Hot-carrier-induced photon emission in submicron GaAs devices Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/142 |
0.318 |
|
1992 |
Gruzhinskis V, Starikov E, Shiktorov P, Reggiani L, Saraniti M, Varani L. Hydrodynamic analysis of submicrometer n+nn+ diodes for microwave generators Applied Physics Letters. 61: 1456-1458. DOI: 10.1063/1.107516 |
0.429 |
|
1990 |
Lugli P, Neviani A, Saraniti M. Physical models for heterostructure FET simulation European Transactions On Telecommunications. 1: 447-456. DOI: 10.1002/Ett.4460010413 |
0.418 |
|
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