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Elizabeth H. Steenbergen, Ph.D. - Publications

Affiliations: 
2012 Electrical Engineering Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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42 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Petluru P, Grant PC, Muhowski AJ, Obermeier IM, Milosavljevic MS, Johnson SR, Wasserman D, Steenbergen EH, Webster PT. Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi Applied Physics Letters. 117: 61103. DOI: 10.1063/5.0007275  0.422
2020 Casias LK, Morath CP, Steenbergen EH, Umana-Membreno GA, Webster PT, Logan JV, Kim JK, Balakrishnan G, Faraone L, Krishna S. Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material Applied Physics Letters. 116: 182109. DOI: 10.1063/1.5144079  0.409
2019 Taghipour Z, Lee S, Myers S, Steenbergen E, Morath C, Cowan V, Mathews S, Balakrishnan G, Krishna S. Temperature-Dependent Minority-Carrier Mobility in p -Type InAs / GaSb Type-II-Superlattice Photodetectors Physical Review Applied. 11. DOI: 10.1103/Physrevapplied.11.024047  0.357
2019 Logan JV, Short MP, Webster PT, Morath CP, Steenbergen EH. Impact of proton-induced transmutation doping in semiconductors for space applications Journal of Materials Chemistry C. 7: 8905-8914. DOI: 10.1039/C9Tc02995H  0.327
2019 Casias LK, Morath CP, Steenbergen EH, Webster PT, Kim JK, Cowan VM, Balakrishnan G, Krishna S. Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications Infrared Physics & Technology. 96: 184-191. DOI: 10.1016/J.Infrared.2018.11.024  0.417
2018 Kazemi A, Myers S, Taghipour Z, Mathews S, Schuler-Sandy T, Lee S, Cowan VM, Garduno E, Steenbergen E, Morath C, Ariyawansa G, Scheihing J, Krishna S. Mid-wavelength infrared unipolar nBp superlattice photodetector Infrared Physics & Technology. 88: 114-118. DOI: 10.1016/J.Infrared.2017.11.008  0.435
2017 Steenbergen EH, Ariyawansa G, Reyner CJ, Jenkins GD, Morath CP, Duran JM, Scheihing JE, Cowan VM. A recent review of mid-wavelength infrared type-II superlattices: carrier localization, device performance, and radiation tolerance Proceedings of Spie. 10111: 1011104. DOI: 10.1117/12.2266040  0.427
2017 Kazemi A, Myers S, Taghipour Z, Mathews S, Schuler-Sandy T, Lee SH, Cowan VM, Garduno E, Steenbergen E, Morath C, Ariyawansa G, Scheihing J, Krishna S. High quantum efficiency mid-wavelength infrared superlattice photodetector Proceedings of Spie. 10177. DOI: 10.1117/12.2263879  0.447
2017 Ariyawansa G, Duran JM, Reyner CJ, Steenbergen EH, Yoon N, Wasserman D, Scheihing JE. Growth and characterization of In1-xGaxAs/InAs0.65Sb0.35 strained layer superlattice infrared detectors Proceedings of Spie. DOI: 10.1117/12.2262579  0.362
2017 Garduno EA, Cowan VM, Jenkins GD, Morath CP, Steenbergen EH. Comparison of Pre-and Post-Irradiation Low-Frequency Noise Spectra of Midwave Infrared nBn Detectors With Superlattice Absorbers Ieee Transactions On Nuclear Science. 64: 1042-1047. DOI: 10.1109/Tns.2017.2679019  0.327
2017 Liu H, Zhang Y, Steenbergen EH, Liu S, Lin Z, Zhang Y, Kim J, Ji MH, Detchprohm T, Dupuis RD, Kim JK, Hawkins SD, Klem JF. Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx Physical Review Applied. 8: 34028. DOI: 10.1103/Physrevapplied.8.034028  0.539
2016 Ramirez DA, Myers SA, Kuznetsova Y, Mathews S, Schuler-Sandy T, Steenbergen EH, Morath CP, Cowan VM, Krishna S. Comparison of MWIR unipolar barrier structures based on strained layer superlattices (Conference Presentation) Proceedings of Spie. 9974. DOI: 10.1117/12.2239723  0.393
2016 Ariyawansa G, Reyner CJ, Duran JM, Reding JD, Scheihing JE, Steenbergen EH. Unipolar infrared detectors based on InGaAs/InAsSb ternary superlattices Applied Physics Letters. 109. DOI: 10.1063/1.4958854  0.447
2016 Lu J, Luna E, Aoki T, Steenbergen EH, Zhang YH, Smith DJ. Evaluation of antimony segregation in InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy Journal of Applied Physics. 119. DOI: 10.1063/1.4942844  0.585
2016 Ariyawansa G, Reyner CJ, Steenbergen EH, Duran JM, Reding JD, Scheihing JE, Bourassa HR, Liang BL, Huffaker DL. InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors Applied Physics Letters. 108. DOI: 10.1063/1.4939904  0.426
2016 Steenbergen EH, Massengale JA, Ariyawansa G, Zhang Y. Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−xSbx type-II superlattices Journal of Luminescence. 178: 451-456. DOI: 10.1016/J.Jlumin.2016.06.020  0.581
2016 Connelly BC, Steenbergen EH, Smith HE, Elhamri S, Mitchel WC, Mou S, Metcalfe GD, Brown GJ, Wraback M. Dependence of minority carrier lifetime of Be-doped InAs/InAsSb type-II infrared superlattices on temperature and doping density Physica Status Solidi (B) Basic Research. 253: 630-634. DOI: 10.1002/Pssb.201552497  0.411
2015 Steenbergen EH, Lin ZY, Elhamri S, Mitchel WC, Zhang Y, Kaspi R. Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties Proceedings of Spie. 9451: 945114. DOI: 10.1117/12.2177696  0.629
2015 Webster PT, Riordan NA, Liu S, Steenbergen EH, Synowicki RA, Zhang YH, Johnson SR. Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy Journal of Applied Physics. 118. DOI: 10.1063/1.4939293  0.62
2015 Lin ZY, Liu S, Steenbergen EH, Zhang YH. Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices Applied Physics Letters. 107. DOI: 10.1063/1.4936109  0.609
2015 Webster PT, Riordan NA, Liu S, Steenbergen EH, Synowicki RA, Zhang YH, Johnson SR. Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry Applied Physics Letters. 106. DOI: 10.1063/1.4908255  0.607
2014 Ariyawansa G, Steenbergen E, Bissell LJ, Duran JM, Scheihing JE, Eismann MT. Absorption characteristics of mid-wave infrared type-II superlattices Proceedings of Spie - the International Society For Optical Engineering. 9070. DOI: 10.1117/12.2057506  0.418
2014 Haughn CR, Steenbergen EH, Bissell LJ, Chen EY, Eyink KG, Zide JMO, Doty MF. Carrier transfer from InAs quantum dots to ErAs metal nanoparticles Applied Physics Letters. 105. DOI: 10.1063/1.4895519  0.313
2014 Steenbergen EH, Elhamri S, Mitchel WC, Mou S, Brown GJ. Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices Applied Physics Letters. 104. DOI: 10.1063/1.4861159  0.444
2013 Steenbergen EH, Elhamri S, Asel TJ, Mitchel WC, Hierath ST, Brown GJ. Impact of Be-doping on the material properties of InAs/InAsSb type-II superlattices for infrared detection Proceedings of Spie. 8993. DOI: 10.1117/12.2042347  0.477
2013 Steenbergen EH, Massengale JA, Cowan VM, Lin Z, Zhang Y, Morath CP. Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices Proceedings of Spie. 8876: 887609. DOI: 10.1117/12.2026872  0.558
2013 Wang JS, Steenbergen EH, Smith HE, Grazulis L, Massengale JA, Ullrich B, Brown GJ. Stability studies of lead sulfide colloidal quantum dot films on glass and GaAs substrates Proceedings of Spie - the International Society For Optical Engineering. 8634. DOI: 10.1117/12.2002499  0.364
2013 Mahalingam K, Steenbergen EH, Brown GJ, Zhang YH. Quantitative analysis of strain distribution in InAs/InAs 1-xSbx superlattices Applied Physics Letters. 103. DOI: 10.1063/1.4817969  0.553
2013 Liu S, Li H, Cellek OO, Ding D, Shen X, Lin Z, Steenbergen EH, Fan J, He Z, Lu J, Johnson SR, Smith DJ, Zhang Y. Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy Applied Physics Letters. 102: 071903. DOI: 10.1063/1.4793231  0.633
2013 Li H, Liu S, Cellek OO, Ding D, Shen X, Steenbergen EH, Fan J, Lin Z, He Z, Zhang Q, Webster PT, Johnson SR, Ouyang L, Smith DJ, Zhang Y. A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy Journal of Crystal Growth. 378: 145-149. DOI: 10.1016/J.Jcrysgro.2012.12.144  0.64
2013 Lim SH, Li JJ, Steenbergen EH, Zhang Y. Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement Progress in Photovoltaics. 21: 344-350. DOI: 10.1002/Pip.1215  0.517
2012 Steenbergen EH, Connelly BC, Metcalfe GD, Shen H, Wraback M, Lubyshev D, Qiu Y, Fastenau JM, Liu AWK, Elhamri S, Cellek OO, Zhang YH. Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices Proceedings of Spie - the International Society For Optical Engineering. 8512. DOI: 10.1117/12.930949  0.582
2012 Cellek OO, Li H, Shen X, Lin Z, Steenbergen EH, Ding D, Liu S, Zhang Q, Kim HS, Fan J, DiNezza MJ, Dettlaff WHG, Webster PT, He Z, Li J, et al. InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications Proceedings of Spie. 8353. DOI: 10.1117/12.925076  0.75
2012 Ouyang L, Steenbergen EH, Cellek OO, Zhang Y, Smith DJ. Structural properties of InAs/InAs 1-x Sb x type-II superlattices Proceedings of Spie. 8268: 826830. DOI: 10.1117/12.912276  0.63
2012 Steenbergen EH, Cellek OO, Lubyshev D, Qiu Y, Fastenau JM, Liu AWK, Zhang Y. Study of the valence band offsets between InAs and InAs 1-x Sb x alloys Proceedings of Spie. 8268. DOI: 10.1117/12.907101  0.569
2012 Steenbergen EH, Nunna K, Ouyang L, Ullrich B, Huffaker DL, Smith DJ, Zhang YH. Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672028  0.62
2012 Ouyang L, Steenbergen EH, Zhang YH, Nunna K, Huffaker DL, Smith DJ. Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672026  0.629
2011 Steenbergen EH, Connelly BC, Metcalfe GD, Shen H, Wraback M, Lubyshev D, Qiu Y, Fastenau JM, Liu AWK, Elhamri S, Cellek OO, Zhang YH. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Applied Physics Letters. 99. DOI: 10.1063/1.3671398  0.614
2011 Steenbergen EH, Huang Y, Ryou JH, Ouyang L, Li JJ, Smith DJ, Dupuis RD, Zhang YH. Structural and optical characterization of type-II InAs/InAs 1-xSbx superlattices grown by metalorganic chemical vapor deposition Applied Physics Letters. 99. DOI: 10.1063/1.3625429  0.644
2011 Huang Y, Ryou JH, Dupuis RD, D'costa VR, Steenbergen EH, Fan J, Zhang YH, Petschke A, Mandl M, Chuang SL. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors Journal of Crystal Growth. 314: 92-96. DOI: 10.1016/J.Jcrysgro.2010.11.003  0.587
2011 Steenbergen EH, Dinezza MJ, Dettlaff WHG, Lim SH, Zhang Y. Effects of varying light bias on an optically-addressed two-terminal multicolor photodetector Infrared Physics & Technology. 54: 292-295. DOI: 10.1016/J.Infrared.2010.12.032  0.723
2010 Steenbergen EH, DiNezza MJ, Dettlaff WHG, Lim SH, Zhang Y. Optically-addressed two-terminal multicolor photodetector Applied Physics Letters. 97: 161111. DOI: 10.1063/1.3505137  0.722
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