| Year |
Citation |
Score |
| 2023 |
Kouvetakis J, Wallace PM, Xu C, Ringwala DA, Mircovich M, Roldan MA, Webster PT, Grant PC, Menéndez J. Synthesis of High Sn Content GeSiSn (0.1 < < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications. Acs Applied Materials & Interfaces. 15: 48382-48394. PMID 37801731 DOI: 10.1021/acsami.3c10230 |
0.486 |
|
| 2020 |
Sims P, Wallace P, Liu L, Zhuang H, Kouvetakis J, Menéndez J. Synthesis of heteroepitaxial BP and related Al-B-Sb-As-P films via CVD of Al(BH4)3 and MH3 (M=P, As, Sb) at temperatures below 600 °C Semiconductor Science and Technology. 35: 085034. DOI: 10.1088/1361-6641/Ab9325 |
0.477 |
|
| 2020 |
Hogsed M, Choe K, Miguel N, Wang B, Kouvetakis J. Radiation-induced electron and hole traps in Ge1 − xSnx (x = 0–0.094) Journal of Applied Physics. 127: 065708. DOI: 10.1063/1.5131783 |
0.358 |
|
| 2019 |
Williams D, Kouvetakis J, O'Keeffe M. Synthesis of Nanoporous Cubic In(CN)(3) and In(1)(-)(x)()Ga(x)()(CN)(3) and Corresponding Inclusion Compounds. Inorganic Chemistry. 37: 4617-4620. PMID 11670610 DOI: 10.1021/Ic971638N |
0.349 |
|
| 2019 |
Kouvetakis J, McMurran J, Matsunaga P, O'Keeffe M, Hubbard JL. Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H(3)C)(3)SiN(3).GaCl(3), en Route to Cl(2)GaN(3) and Its Derivatives: Inorganic Precursors to Heteroepitaxial GaN. Inorganic Chemistry. 36: 1792-1797. PMID 11669782 DOI: 10.1021/Ic961273R |
0.438 |
|
| 2019 |
Ryu M, Harris TR, Wang B, Yeo YK, Hogsed MR, Lee SJ, Kim JS, Kouvetakis J. Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point Journal of the Korean Physical Society. 75: 577-585. DOI: 10.3938/Jkps.75.577 |
0.439 |
|
| 2019 |
Kouvetakis J, Tolle J, Mathews J, Roucka R, Menéndéz J. (Invited) Si-Ge-Sn Technologies: From Molecules to Materials to Prototype Devices Ecs Transactions. 33: 615-628. DOI: 10.1149/1.3487592 |
0.33 |
|
| 2019 |
Wang B, Hogsed MR, Harris TR, Wallace PM, Kouvetakis J. Enhanced optical and electrical performance of Ge1−x Sn x /Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments Semiconductor Science and Technology. 34: 045014. DOI: 10.1088/1361-6641/Ab0916 |
0.408 |
|
| 2019 |
Xu C, Wallace PM, Ringwala DA, Chang SLY, Poweleit CD, Kouvetakis J, Menéndez J. Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties Applied Physics Letters. 114: 212104. DOI: 10.1063/1.5100275 |
0.557 |
|
| 2019 |
Xu C, Kouvetakis J, Menéndez J. Doping dependence of the optical dielectric function in n-type germanium Journal of Applied Physics. 125: 085704. DOI: 10.1063/1.5084277 |
0.399 |
|
| 2019 |
Xu C, Ringwala D, Wang D, Liu L, Poweleit CD, Chang SLY, Zhuang HL, Menéndez J, Kouvetakis J. Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents Chemistry of Materials. 31: 9831-9842. DOI: 10.1021/Acs.Chemmater.9B03909 |
0.587 |
|
| 2019 |
Wang B, Harris T, Hogsed M, Yeo Y, Ryu M, Kouvetakis J. Comparison study of temperature dependent direct/indirect bandgap emissions of Ge1-x-ySixSny and Ge1-ySny grown on Ge buffered Si Thin Solid Films. 673: 63-71. DOI: 10.1016/J.Tsf.2019.01.022 |
0.534 |
|
| 2019 |
Menéndez J, Wallace P, Xu C, Senaratne C, Gallagher J, Kouvetakis J. Materials physics of GeSn-based semiconductor lasers Materials Today: Proceedings. 14: 38-42. DOI: 10.1016/J.Matpr.2019.05.048 |
0.475 |
|
| 2018 |
Xu C, Wallace P, Ringwala DA, Menéndez J, Kouvetakis J. Fabrication of Ge:Ga hyper-doped materials and devices using CMOS compatible Ga and Ge hydride chemistries. Acs Applied Materials & Interfaces. PMID 30298720 DOI: 10.1021/Acsami.8B10046 |
0.461 |
|
| 2018 |
Wang B, Fang Z, Claflin B, Look D, Kouvetakis J, Yeo YK. Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition Thin Solid Films. 654: 77-84. DOI: 10.1016/J.Tsf.2018.03.071 |
0.444 |
|
| 2018 |
Jo H, Kim JS, Ryu M, Yeo YK, Kouvetakis J. Investigation of hydrogen inductively coupled plasma treatment effect for Ge0.938Sn0.062/Ge/Si film using photoreflectance spectroscopy Thin Solid Films. 645: 345-350. DOI: 10.1016/J.Tsf.2017.10.059 |
0.502 |
|
| 2017 |
Wallace PM, Sims PE, Xu C, Poweleit CD, Kouvetakis J, Menéndez J. Synthesis, structural, and optical properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y semiconductors using interface engineered group IV platforms. Acs Applied Materials & Interfaces. PMID 28901133 DOI: 10.1021/Acsami.7B09272 |
0.519 |
|
| 2017 |
Xu C, Fernando NS, Zollner S, Kouvetakis J, Menéndez J. Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n-Type Ge. Physical Review Letters. 118: 267402. PMID 28707902 DOI: 10.1103/Physrevlett.118.267402 |
0.405 |
|
| 2017 |
Wallace PM, Senaratne CL, Xu C, Sims PE, Kouvetakis J, Menéndez J. Molecular epitaxy of pseudomorphic Ge1−ySny(y= 0.06–0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10and SnD4 Semiconductor Science and Technology. 32: 025003. DOI: 10.1088/1361-6641/32/2/025003 |
0.491 |
|
| 2017 |
Sims PE, Wallace PM, Xu C, Poweleit CD, Claflin B, Kouvetakis J, Menéndez J. Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks Applied Physics Letters. 111: 122101. DOI: 10.1063/1.5003345 |
0.457 |
|
| 2017 |
Xu C, Senaratne CL, Culbertson RJ, Kouvetakis J, Menéndez J. Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases Journal of Applied Physics. 122: 125702. DOI: 10.1063/1.4996306 |
0.411 |
|
| 2017 |
Sims PE, Xu C, Poweleit CD, Menéndez J, Kouvetakis J. Synthesis and Characterization of Monocrystalline GaPSi3 and (GaP)y(Si)5–2y Phases with Diamond-like Structures via Epitaxy-Driven Reactions of Molecular Hydrides Chemistry of Materials. 29: 3202-3210. DOI: 10.1021/Acs.Chemmater.7B00347 |
0.574 |
|
| 2017 |
Fernando NS, Nunley TN, Ghosh A, Nelson CM, Cooke JA, Medina AA, Zollner S, Xu C, Menendez J, Kouvetakis J. Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si Applied Surface Science. 421: 905-912. DOI: 10.1016/J.Apsusc.2016.09.019 |
0.499 |
|
| 2016 |
Xu C, Senaratne CL, Sims P, Kouvetakis J, Menéndez J. Ultra-low Resistivity Ge:Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane. Acs Applied Materials & Interfaces. PMID 27538719 DOI: 10.1021/Acsami.6B06161 |
0.562 |
|
| 2016 |
Xu C, Gallagher JD, Senaratne CL, Menéndez J, Kouvetakis J. Optical properties of Ge-rich G e1-x S IX alloys: Compositional dependence of the lowest direct and indirect gaps Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.125206 |
0.364 |
|
| 2016 |
Xu C, Senaratne CL, Kouvetakis J, Menéndez J. Experimental doping dependence of the lattice parameter in n -type Ge: Identifying the correct theoretical framework by comparison with Si Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.041201 |
0.469 |
|
| 2016 |
Harris TR, Ryu MY, Yeo YK, Wang B, Senaratne CL, Kouvetakis J. Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies Journal of Applied Physics. 120. DOI: 10.1063/1.4961464 |
0.538 |
|
| 2016 |
Senaratne CL, Wallace PM, Gallagher JD, Sims PE, Kouvetakis J, Menéndez J. Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes Journal of Applied Physics. 120. DOI: 10.1063/1.4956439 |
0.543 |
|
| 2016 |
Jo HJ, Kim GH, Kim JS, Ryu MY, Yeo YK, Harris TR, Kouvetakis J. Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy Current Applied Physics. 16: 83-87. DOI: 10.1016/J.Cap.2015.10.014 |
0.392 |
|
| 2015 |
Senaratne CL, Gallagher JD, Xu C, Sims PE, Menéndez J, Kouvetakis J. Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence Ecs Transactions. 69: 157-164. DOI: 10.1149/06914.0157ecst |
0.311 |
|
| 2015 |
Xu C, Gallagher JD, Senaratne CL, Sims PE, Kouvetakis J, Menéndez J. CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge) Ecs Transactions. 69: 3-15. DOI: 10.1149/06914.0003ecst |
0.353 |
|
| 2015 |
Xu C, Gallagher JD, Sims P, Smith DJ, Menéndez J, Kouvetakis J. Non-conventional routes to SiGe:P/Si(100) materials and devices based on -SiH3 and -GeH3 derivatives of phosphorus: Synthesis, electrical performance and optical behavior Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/4/045007 |
0.55 |
|
| 2015 |
Xu C, Gallagher JD, Wallace PM, Senaratne CL, Sims P, Menéndez J, Kouvetakis J. In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: Fundamental properties and device prototypes Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105028 |
0.527 |
|
| 2015 |
Gallagher JD, Xu C, Senaratne CL, Aoki T, Wallace PM, Kouvetakis J, Menéndez J. Ge1-x-ySixSny light emitting diodes on silicon for mid-infrared photonic applications Journal of Applied Physics. 118. DOI: 10.1063/1.4931770 |
0.556 |
|
| 2015 |
Gallagher JD, Senaratne CL, Wallace PM, Menéndez J, Kouvetakis J. Electroluminescence from Ge1-ySny diodes with degenerate pn junctions Applied Physics Letters. 107. DOI: 10.1063/1.4931707 |
0.431 |
|
| 2015 |
Gallagher JD, Senaratne CL, Xu C, Sims P, Aoki T, Smith DJ, Menéndez J, Kouvetakis J. Non-radiative recombination in Ge1-ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs Journal of Applied Physics. 117. DOI: 10.1063/1.4923060 |
0.446 |
|
| 2015 |
Gallagher JD, Senaratne CL, Sims P, Aoki T, Menéndez J, Kouvetakis J. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition Applied Physics Letters. 106. DOI: 10.1063/1.4913688 |
0.37 |
|
| 2015 |
Sims P, Aoki T, Favaro R, Wallace P, White A, Xu C, Menendez J, Kouvetakis J. Crystalline (Al1-xBx)PSi3 and (Al1-xBx)AsSi3 tetrahedral phases via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As) Chemistry of Materials. 27: 3030-3039. DOI: 10.1021/Acs.Chemmater.5B00412 |
0.404 |
|
| 2015 |
Gallagher JD, Aoki T, Sims P, Menendez J, Kouvetakis J. Influence of Device Microstructure on The Optical Properties of Ge1-ySny (y=00.11) LEDs Produced by Next Generation Deposition Methods Microscopy and Microanalysis. 21: 2137-2138. DOI: 10.1017/S1431927615011460 |
0.369 |
|
| 2015 |
Sims P, Aoki T, Menendez J, Kouvetakis J. Atomic Scale Structure and Bonding Configurations in Monocrystalline Ah-xBxPSb Alloys Grown Lattice Matched on Si(001) Platforms Microscopy and Microanalysis. 21: 1923-1924. DOI: 10.1017/S1431927615010399 |
0.456 |
|
| 2015 |
Jo HJ, So MG, Kim JS, Ryu MY, Yeo YK, Kouvetakis J. Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy Thin Solid Films. 591: 295-300. DOI: 10.1016/J.Tsf.2015.06.008 |
0.451 |
|
| 2015 |
Xu C, Senaratne CL, Kouvetakis J, Menéndez J. Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys Solid-State Electronics. DOI: 10.1016/J.Sse.2015.01.015 |
0.309 |
|
| 2014 |
Kouvetakis J, Gallagher J, Menéndez J. Direct gap Group IV semiconductors for next generation Si-based IR photonics Mrs Proceedings. 1666. DOI: 10.1557/Opl.2014.666 |
0.567 |
|
| 2014 |
Jiang L, Gallagher JD, Senaratne CL, Aoki T, Mathews J, Kouvetakis J, Menéndez J. Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: Implications for the indirect to direct gap crossover in intrinsic and n-type materials Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/115028 |
0.381 |
|
| 2014 |
Xu C, Senaratne CL, Kouvetakis J, Menéndez J. Frustrated incomplete donor ionization in ultra-low resistivity germanium films Applied Physics Letters. 105: 232103. DOI: 10.1063/1.4903492 |
0.428 |
|
| 2014 |
Gallagher JD, Senaratne CL, Kouvetakis J, Menéndez J. Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1-ySny alloys Applied Physics Letters. 105. DOI: 10.1063/1.4897272 |
0.332 |
|
| 2014 |
Senaratne CL, Gallagher JD, Jiang L, Aoki T, Smith DJ, Menéndez J, Kouvetakis J. Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties Journal of Applied Physics. 116. DOI: 10.1063/1.4896788 |
0.58 |
|
| 2014 |
Harris TR, Yeo YK, Ryu MY, Beeler RT, Kouvetakis J. Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn) Journal of Applied Physics. 116. DOI: 10.1063/1.4894870 |
0.682 |
|
| 2014 |
Senaratne CL, Gallagher JD, Aoki T, Kouvetakis J, Menéndez J. Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries Chemistry of Materials. 26: 6033-6041. DOI: 10.1021/Cm502988Y |
0.51 |
|
| 2014 |
Kouvetakis J, Favaro R, Grzybowski GJ, Senaratne C, Menéndez J, Chizmeshya AVG. Molecular strategies for configurational sulfur doping of group IV semiconductors grown on Si(100) using S(MH3)2 (M = Si,Ge) delivery sources: An experimental and theoretical inquiry Chemistry of Materials. 26: 4447-4458. DOI: 10.1021/Cm501434Z |
0.797 |
|
| 2014 |
Jiang L, Aoki T, Smith DJ, Chizmeshya AVG, Menendez J, Kouvetakis J. Nanostructure-property control in AlPSi3/Si(100) semiconductors using direct molecular assembly: Theory meets experiment at the atomic level Chemistry of Materials. 26: 4092-4101. DOI: 10.1021/Cm500926Q |
0.543 |
|
| 2014 |
Jiang L, Xu C, Gallagher JD, Favaro R, Aoki T, Menéndez J, Kouvetakis J. Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications Chemistry of Materials. 26: 2522-2531. DOI: 10.1021/Cm403801B |
0.618 |
|
| 2014 |
Aoki T, Jiang L, Chizmeshya AVG, Menéndez J, Kouvetakis J, Smith DJ. Atomic scale studies of structure and bonding in A1PSi<inf>3</inf> alloys grown lattice-matched on Si(001) Microscopy and Microanalysis. 20: 524-525. DOI: 10.1017/S1431927614004346 |
0.455 |
|
| 2014 |
Jiang L, Aoki T, Kouvetakis J, Menéndez J. High Resolution EELS Study of Ge1-ySny and Ge1-x-ySixSny Alloys Microscopy and Microanalysis. 20: 520-521. DOI: 10.1017/S1431927614004322 |
0.524 |
|
| 2014 |
Xu C, Beeler RT, Jiang L, Gallagher JD, Favaro R, Menéndez J, Kouvetakis J. Synthesis and optical properties of Sn-rich Ge1-X -ySi xSny materials and devices Thin Solid Films. 557: 177-182. DOI: 10.1016/J.Tsf.2013.08.043 |
0.776 |
|
| 2014 |
Harris TR, Ryu MY, Yeo YK, Beeler RT, Kouvetakis J. Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates Current Applied Physics. 14: S123-S128. DOI: 10.1016/J.Cap.2013.11.009 |
0.761 |
|
| 2013 |
Sims PE, Chizmeshya AV, Jiang L, Beeler RT, Poweleit CD, Gallagher J, Smith DJ, Menéndez J, Kouvetakis J. Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties. Journal of the American Chemical Society. 135: 12388-99. PMID 23899409 DOI: 10.1021/Ja405726B |
0.753 |
|
| 2013 |
Beeler RT, Gallagher J, Xu C, Jiang L, Senaratne CL, Smith DJ, Menéndez J, Chizmeshya AVG, Kouvetakis J. Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.034309Jss |
0.736 |
|
| 2013 |
Jiang L, Sims PE, Grzybowski G, Beeler RT, Chizmeshya AVG, Smith DJ, Kouvetakis J, Menéndez J. Nanoscale assembly of silicon-like [Al(As1-xNx)] ySi5-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.045208 |
0.837 |
|
| 2013 |
Xu C, Beeler RT, Jiang L, Grzybowski G, Chizmeshya AVG, Menéndez J, Kouvetakis J. New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/10/105001 |
0.842 |
|
| 2013 |
Gallagher JD, Xu C, Jiang L, Kouvetakis J, Menéndez J. Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys Applied Physics Letters. 103. DOI: 10.1063/1.4829621 |
0.429 |
|
| 2013 |
Xu C, Jiang L, Kouvetakis J, Menéndez J. Optical properties of Ge1-x-ySixSny alloys with y > x: Direct bandgaps beyond 1550 nm Applied Physics Letters. 103: 072111. DOI: 10.1063/1.4818673 |
0.522 |
|
| 2013 |
Ryu MY, Harris TR, Yeo YK, Beeler RT, Kouvetakis J. Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content Applied Physics Letters. 102. DOI: 10.1063/1.4803927 |
0.74 |
|
| 2013 |
Grzybowski G, Chizmeshya AVG, Senaratne C, Menendez J, Kouvetakis J. Fundamental experimental and theoretical aspects of high-order Ge-hydride chemistry for versatile low-temperature Ge-based materials fabrication Journal of Materials Chemistry C. 1: 5223-5234. DOI: 10.1039/C3Tc30865K |
0.747 |
|
| 2012 |
Xu C, Beeler RT, Grzybowski GJ, Chizmeshya AV, Smith DJ, Menéndez J, Kouvetakis J. Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn. Journal of the American Chemical Society. 134: 20756-67. PMID 23237361 DOI: 10.1021/Ja309894C |
0.85 |
|
| 2012 |
Grzybowski G, Beeler RT, Jiang L, Smith DJ, Chizmeshya AVG, Kouvetakis J, Menéndez J. GeSn alloys on Si using deuterated stannane and trigermane: Synthesis and Properties Ecs Transactions. 50: 865-874. DOI: 10.1149/05009.0865ecst |
0.842 |
|
| 2012 |
Chizmeshya AVG, Kouvetakis J, Grzybowski G, Beeler R, Menendez J. Nano-synthesis approach to the fabrication of monocrystalline silicon-like (III-V)yIV5-2y semiconductors Ecs Transactions. 50: 623-634. DOI: 10.1149/05009.0623ecst |
0.767 |
|
| 2012 |
Beeler RT, Menéndez J, Smith DJ, Kouvetakis J. High performance group IV photodiodes with tunable absorption edges based on ternary SiGeSn alloys Ecs Transactions. 50: 591-599. DOI: 10.1149/05009.0591ecst |
0.732 |
|
| 2012 |
Beeler RT, Smith DJ, Kouvetakis J, Menéndez J. GeSiSn photodiodes with 1 eV optical gaps grown on Si(100) and Ge(100) platforms Ieee Journal of Photovoltaics. 2: 434-440. DOI: 10.1109/Jphotov.2012.2206568 |
0.77 |
|
| 2012 |
Beeler RT, Xu C, Smith DJ, Grzybowski G, Menéndez J, Kouvetakis J. Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si 4H10, and SnD4 Applied Physics Letters. 101. DOI: 10.1063/1.4768217 |
0.839 |
|
| 2012 |
Ryu MY, Yeo YK, Ahoujja M, Harris T, Beeler R, Kouvetakis J. Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate Applied Physics Letters. 101. DOI: 10.1063/1.4754625 |
0.697 |
|
| 2012 |
Grzybowski G, Beeler RT, Jiang L, Smith DJ, Kouvetakis J, Menéndez J. Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4: Reaction kinetics and tunable emission Applied Physics Letters. 101. DOI: 10.1063/1.4745770 |
0.835 |
|
| 2012 |
Watkins T, Jiang L, Xu C, Chizmeshya AVG, Smith DJ, Menéndez J, Kouvetakis J. (Si) 5-2y(AlP) y alloys assembled on Si(100) from Al-P-Si 3 building units Applied Physics Letters. 100. DOI: 10.1063/1.3675444 |
0.55 |
|
| 2012 |
Kouvetakis J, Chizmeshya AVG, Jiang L, Watkins T, Grzybowski G, Beeler RT, Poweleit C, Menéndez J. Monocrystalline Al(As1-xNx)Si3 and Al(P1-xNx)ySi5-2 y alloys with diamond-like structures: New chemical approaches to semiconductors lattice matched to Si Chemistry of Materials. 24: 3219-3230. DOI: 10.1021/Cm301616S |
0.845 |
|
| 2012 |
Grzybowski G, Watkins T, Beeler RT, Jiang L, Smith DJ, Chizmeshya AVG, Kouvetakis J, Menéndez J. Synthesis and properties of monocrystalline Al(As 1-xP x)Si 3 alloys on Si(100) Chemistry of Materials. 24: 2347-2355. DOI: 10.1021/Cm300761R |
0.84 |
|
| 2012 |
Grzybowski G, Jiang L, Beeler RT, Watkins T, Chizmeshya AVG, Xu C, Menéndez J, Kouvetakis J. Ultra-low-temperature epitaxy of ge-based semiconductors and optoelectronic structures on Si(100): Introducing higher order germanes (Ge 3H 8, Ge 4H 10) Chemistry of Materials. 24: 1619-1628. DOI: 10.1021/Cm3002404 |
0.839 |
|
| 2012 |
Grzybowski G, Watkins T, Beeler RT, Jiang L, Smith DJ, Chizmeshya AVG, Kouvetakis J, Menendez J. ChemInform Abstract: Synthesis and Properties of Monocrystalline Al(As1-xPx)Si3Alloys on Si(100). Cheminform. 43: no-no. DOI: 10.1002/CHIN.201241007 |
0.797 |
|
| 2011 |
Watkins T, Chizmeshya AV, Jiang L, Smith DJ, Beeler RT, Grzybowski G, Poweleit CD, Menéndez J, Kouvetakis J. Nanosynthesis routes to new tetrahedral crystalline solids: silicon-like Si3AlP. Journal of the American Chemical Society. 133: 16212-8. PMID 21877711 DOI: 10.1021/Ja206738V |
0.848 |
|
| 2011 |
Weng C, Kouvetakis J, Chizmeshya AV. A novel predictive model for formation enthalpies of Si and Ge hydrides with propane- and butane-like structures. Journal of Computational Chemistry. 32: 835-53. PMID 20949518 DOI: 10.1002/Jcc.21662 |
0.669 |
|
| 2011 |
Roucka R, Mathews J, Weng C, Beeler R, Tolle J, Menéndez J, Kouvetakis J. High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon Ieee Journal of Quantum Electronics. 47: 213-222. DOI: 10.1109/Jqe.2010.2077273 |
0.796 |
|
| 2011 |
Grzybowski G, Roucka R, Mathews J, Jiang L, Beeler RT, Kouvetakis J, Menéndez J. Direct versus indirect optical recombination in Ge films grown on Si substrates Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.205307 |
0.82 |
|
| 2011 |
Bagchi S, Poweleit CD, Beeler RT, Kouvetakis J, Menéndez J. Temperature dependence of the Raman spectrum in Ge1-ySn y and Ge1-x-ySixSny alloys Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.193201 |
0.677 |
|
| 2011 |
Beeler R, Roucka R, Chizmeshya AVG, Kouvetakis J, Menéndez J. Nonlinear structure-composition relationships in the Ge 1-ySny/Si(100) (y<0.15) system Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035204 |
0.703 |
|
| 2011 |
Watkins T, Jiang L, Smith DJ, Chizmeshya AVG, Menendez J, Kouvetakis J. Designer hydride routes to 'Si-Ge'/(Gd,Er)2O3/Si(1 1 1) semiconductor-on-insulator heterostructures Semiconductor Science and Technology. 26. DOI: 10.1088/0268-1242/26/12/125005 |
0.58 |
|
| 2011 |
Grzybowski G, Jiang L, Mathews J, Roucka R, Xu C, Beeler RT, Kouvetakis J, Meńndez J. Photoluminescence from heavily doped GeSn:P materials grown on Si(100) Applied Physics Letters. 99. DOI: 10.1063/1.3655679 |
0.826 |
|
| 2011 |
Roucka R, Beeler R, Mathews J, Ryu MY, Kee Yeo Y, Menéndez J, Kouvetakis J. Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100) Journal of Applied Physics. 109. DOI: 10.1063/1.3592965 |
0.735 |
|
| 2011 |
Roucka R, Mathews J, Beeler RT, Tolle J, Kouvetakis J, Meńndez J. Direct gap electroluminescence from Si/Ge1-y Sny p-i-n heterostructure diodes Applied Physics Letters. 98. DOI: 10.1063/1.3554747 |
0.699 |
|
| 2011 |
Beeler RT, Grzybowski GJ, Roucka R, Jiang L, Mathews J, Smith DJ, Menéndez J, Chizmeshya AVG, Kouvetakis J. Synthesis and materials properties of sn/p-doped ge on si(100): Photoluminescence and prototype devices Chemistry of Materials. 23: 4480-4486. DOI: 10.1021/Cm201648X |
0.847 |
|
| 2010 |
Tice JB, Chizmeshya AV, Tolle J, D' Costa VR, Menendez J, Kouvetakis J. Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis. Dalton Transactions (Cambridge, England : 2003). 39: 4551-8. PMID 20379588 DOI: 10.1039/C001212B |
0.503 |
|
| 2010 |
Beeler R, Weng C, Tolle J, Roucka R, Mathews J, Ahmari DA, Menéndez J, Kouvetakis J. Growth and optical properties of InGaAs via Ge-based virtual substrates: A new chemistry based strategy Ecs Transactions. 33: 941-950. DOI: 10.1149/1.3487626 |
0.804 |
|
| 2010 |
Mathews J, Roucka R, Weng C, Beeler R, Tolle J, Menéndéz J, Kouvetakis J. Near IR photodiodes with tunable absorption edge based on Ge 1-ySny alloys integrated on silicon Ecs Transactions. 33: 765-773. DOI: 10.1149/1.3487607 |
0.767 |
|
| 2010 |
Chizmeshya AVG, Kouvetakis J. Practical strategies for tuning optical, structural and thermal properties in group IV ternary semiconductors Ecs Transactions. 33: 717-728. DOI: 10.1149/1.3487602 |
0.357 |
|
| 2010 |
Kouvetakis J, Mathews J, Roucka R, Chizmeshya AVG, Tolle J, Menendez J. Practical materials chemistry approaches for tuning optical and structural properties of group IV semiconductors and prototype photonic devices Ieee Photonics Journal. 2: 924-941. DOI: 10.1109/Jphot.2010.2081357 |
0.49 |
|
| 2010 |
Roucka R, Fang YY, Kouvetakis J, Chizmeshya AVG, Menéndez J. Thermal expansivity of Ge1-y sny alloys Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.245214 |
0.425 |
|
| 2010 |
Mathews J, Beeler RT, Tolle J, Xu C, Roucka R, Kouvetakis J, Meńndez J. Direct-gap photoluminescence with tunable emission wavelength in Ge 1-y Sny alloys on silicon Applied Physics Letters. 97. DOI: 10.1063/1.3521391 |
0.72 |
|
| 2010 |
Weng C, Kouvetakis J, Chizmeshya AVG. Si-Ge-based oxynitrides: From molecules to solids Chemistry of Materials. 22: 3884-3899. DOI: 10.1021/Cm903772N |
0.574 |
|
| 2010 |
Tice JB, D'Costa VR, Grzybowski G, Chizmeshya AVG, Tolle J, Menendez J, Kouvetakis J. Synthesis and optical properties of amorphous Si3N 4- xPx dielectrics and complementary insights from ab initio structural simulations Chemistry of Materials. 22: 5296-5305. DOI: 10.1021/Cm101448A |
0.761 |
|
| 2010 |
Xie J, Chizmeshya AVG, Tolle J, Dcosta VR, Menendez J, Kouvetakis J. Synthesis, stability range, and fundamental properties of Si-Ge-Sn semiconductors grown directly on Si(100) and Ge(100) platforms Chemistry of Materials. 22: 3779-3789. DOI: 10.1021/Cm100915Q |
0.566 |
|
| 2010 |
D'Costa VR, Fang YY, Tolle J, Kouvetakis J, Menéndez J. Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors Thin Solid Films. 518: 2531-2537. DOI: 10.1016/J.Tsf.2009.09.149 |
0.443 |
|
| 2010 |
Beeler R, Mathews J, Weng C, Tolle J, Roucka R, Chizmeshya AVG, Juday R, Bagchi S, Menndez J, Kouvetakis J. Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(1 0 0) substrates for low-cost photovoltaic applications Solar Energy Materials and Solar Cells. 94: 2362-2370. DOI: 10.1016/J.Solmat.2010.08.016 |
0.803 |
|
| 2010 |
Tice JB, D'Costa VR, Grzybowski G, Chizmeshya AVG, Tolle J, Menendez J, Kouvetakis J. ChemInform Abstract: Synthesis and Optical Properties of Amorphous Si3N4-xPx Dielectrics and Complementary Insights from ab initio Structural Simulations. Cheminform. 41: no-no. DOI: 10.1002/CHIN.201046004 |
0.653 |
|
| 2010 |
Weng C, Kouvetakis J, Chizmeshya AVG. ChemInform Abstract: Si-Ge-Based Oxynitrides: From Molecules to Solids Cheminform. 41: no-no. DOI: 10.1002/CHIN.201035003 |
0.612 |
|
| 2010 |
Kouvetakis J, et al. ea. ChemInform Abstract: Synthesis of Silicon-Based Infrared Semiconductors in the Ge-Sn System Using Molecular Chemistry Methods. Cheminform. 33: no-no. DOI: 10.1002/chin.200204252 |
0.329 |
|
| 2009 |
Tice JB, Weng C, Tolle J, D'Costa VR, Singh R, Menendez J, Kouvetakis J, Chizmeshya AV. Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics. Dalton Transactions (Cambridge, England : 2003). 6773-82. PMID 19690688 DOI: 10.1039/B908280H |
0.69 |
|
| 2009 |
Tice JB, Chizmeshya AV, Groy TL, Kouvetakis J. Synthesis and fundamental properties of stable Ph(3)SnSiH(3) and Ph(3)SnGeH(3) hydrides: model compounds for the design of Si-Ge-Sn photonic alloys. Inorganic Chemistry. 48: 6314-20. PMID 19496607 DOI: 10.1021/Ic900612S |
0.43 |
|
| 2009 |
D'Costa VR, Fang YY, Tolle J, Kouvetakis J, Menéndez J. Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys. Physical Review Letters. 102: 107403. PMID 19392159 DOI: 10.1103/Physrevlett.102.107403 |
0.517 |
|
| 2009 |
Kouvetakis J, Menendez J, Tolle J. Advanced Si-based Semiconductors for Energy and Photonic Applications Solid State Phenomena. 77-84. DOI: 10.4028/Www.Scientific.Net/Ssp.156-158.77 |
0.541 |
|
| 2009 |
D'Costa VR, Tolle J, Xie J, Kouvetakis J, Menéndez J. Infrared dielectric function of p -type Ge0.98 Sn0.02 alloys Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.125209 |
0.366 |
|
| 2009 |
D'Costa VR, Fang Y, Mathews J, Roucka R, Tolle J, Menéndez J, Kouvetakis J. Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/11/115006 |
0.423 |
|
| 2009 |
Xie J, Tolle J, D'Costa VR, Chizmeshya AVG, Meńndez J, Kouvetakis J. Direct integration of active Ge1-x (Si4 Sn)x semiconductors on Si(100) Applied Physics Letters. 95. DOI: 10.1063/1.3242002 |
0.567 |
|
| 2009 |
Mathews J, Roucka R, Xie J, Yu S, Menéndez J, Kouvetakis J. Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications Applied Physics Letters. 95: 133506. DOI: 10.1063/1.3238327 |
0.489 |
|
| 2009 |
Fang YY, Tolle J, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Menendez J. Practical B and P doping via Six Sny Ge1-x-y-z Mz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior Applied Physics Letters. 95. DOI: 10.1063/1.3204456 |
0.493 |
|
| 2009 |
Tolle J, Roucka R, Forrest B, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Poweleit CD, Groenert M, Sato T, Menéndez J. Integration of Zn-Cd-Te-Se Semiconductors on Si platforms via structurally designed cubic templates based on group IV elements Chemistry of Materials. 21: 3143-3152. DOI: 10.1021/Cm900437Y |
0.525 |
|
| 2009 |
Xie J, Tolle J, D'Costa VR, Weng C, Chizmeshya AVG, Menendez J, Kouvetakis J. Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport properties Solid-State Electronics. 53: 816-823. DOI: 10.1016/j.sse.2009.04.013 |
0.511 |
|
| 2009 |
Fang YY, D'Costa VR, Tolle J, Tice JB, Poweleit CD, Menéndez J, Kouvetakis J. Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1-xSix/Si(100) materials using nanoscale building blocks Solid State Communications. 149: 78-81. DOI: 10.1016/J.Ssc.2008.10.009 |
0.575 |
|
| 2008 |
Fang YY, Xie J, Tolle J, Roucka R, D'Costa VR, Chizmeshya AV, Menendez J, Kouvetakis J. Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics. Journal of the American Chemical Society. 130: 16095-102. PMID 19032100 DOI: 10.1021/Ja806636C |
0.579 |
|
| 2008 |
Kouvetakis J, Tolle J, Roucka R, D'Costa VR, Fang YY, Chizmeshya AVG, Menendez J. Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds Ecs Transactions. 16: 807-821. DOI: 10.1149/1.2986840 |
0.35 |
|
| 2008 |
Roucka R, Xie J, Kouvetakis J, Mathews J, D’Costa V, Menéndez J, Tolle J, Yu S. Ge1−ySny photoconductor structures at 1.55μm: From advanced materials to prototype devices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 1952-1959. DOI: 10.1116/1.3021024 |
0.463 |
|
| 2008 |
Kouvetakis J, An YJ, D'Costa VR, Tolle J, Chizmeshya AVG, Menéndez J, Roucka R. Synthesis of (Hf, Zr)B2-based heterostructures: Hybrid substrate systems for low temperature Al-Ga-N integration with Si Journal of Materials Chemistry. 18: 4775-4782. DOI: 10.1039/B807097K |
0.581 |
|
| 2008 |
Tice JB, Fang YY, Tolle J, Chizmeshya A, Kouvetakis J. Synthesis and fundamental studies of chlorinated Si-Ge hydride macromolecules for strain engineering and selective-area epitaxial applications Chemistry of Materials. 20: 4374-4385. DOI: 10.1021/Cm800427P |
0.554 |
|
| 2008 |
Roucka R, D'Costa VR, An YJ, Canonico M, Kouvetakis J, Menéndez J, Chizmeshya AVG. Thermoelastic and optical properties of thick boride templates on silicon for nitride integration applications Chemistry of Materials. 20: 1431-1442. DOI: 10.1021/Cm702547P |
0.517 |
|
| 2008 |
Fang YY, D'Costa VR, Tolle J, Poweleit CD, Kouvetakis J, Menéndez J. Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100) Thin Solid Films. 516: 8327-8332. DOI: 10.1016/J.Tsf.2008.03.045 |
0.545 |
|
| 2008 |
Roucka R, An YJ, Chizmeshya AVG, D'Costa VR, Tolle J, Menéndez J, Kouvetakis J. Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates Solid-State Electronics. 52: 1687-1690. DOI: 10.1016/J.Sse.2008.07.013 |
0.52 |
|
| 2008 |
Liu PL, Chizmeshya A, Kouvetakis J. Structural, electronic and energetic properties of GaN 0001 /Ga2O3 100 heterojunctions: A first-principles density functional theory study Physical Review B. 77: 35326. DOI: 10.1016/J.Scriptamat.2011.05.028 |
0.392 |
|
| 2008 |
Tice JB, Ritter CJ, Chizmeshya AVG, Forrest B, Torrison L, Groy TL, Kouvetakis J. Synthesis and properties of N3 and CN delivery compounds and related precursors for nitride and ceramic fabrication Applied Organometallic Chemistry. 22: 451-459. DOI: 10.1002/Aoc.1422 |
0.796 |
|
| 2007 |
Bauer M, Groy TL, Kouvetakis J. Redetermination of tetra-kis(trimethyl-stann-yl)germane. Acta Crystallographica. Section E, Structure Reports Online. 64: m49. PMID 21200620 DOI: 10.1107/S1600536807054724 |
0.353 |
|
| 2007 |
Tice JB, Chizmeshya AV, Roucka R, Tolle J, Cherry BR, Kouvetakis J. ClnH6-nSiGe compounds for CMOS compatible semiconductor applications: synthesis and fundamental studies. Journal of the American Chemical Society. 129: 7950-60. PMID 17547404 DOI: 10.1021/Ja0713680 |
0.512 |
|
| 2007 |
Soref R, Kouvetakis J, Tolle J, Menendez J, D’Costa V. Advances in SiGeSn technology Journal of Materials Research. 22: 3281-3291. DOI: 10.1557/Jmr.2007.0415 |
0.547 |
|
| 2007 |
D'Costa VR, Tolle J, Poweleit CD, Kouvetakis J, Menéndez J. Compositional dependence of Raman frequencies in ternary Ge1-x-y Six Sny alloys Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.035211 |
0.508 |
|
| 2007 |
Poweleit CD, Hu CW, Tsong IST, Tolle J, Kouvetakis J. Optical characterization of Si1-x Gex nanodots grown on Si substrates via ultrathin Si O2 buffer layers Journal of Applied Physics. 101. DOI: 10.1063/1.2743742 |
0.56 |
|
| 2007 |
Fang YY, Tolle J, Roucka R, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Meńndez J. Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100) Applied Physics Letters. 90. DOI: 10.1063/1.2472273 |
0.405 |
|
| 2007 |
Wistey MA, Fang YY, Tolle J, Chizmeshya AVG, Kouvetakis J. Chemical routes to GeSi (100) structures for low temperature Si-based semiconductor applications Applied Physics Letters. 90. DOI: 10.1063/1.2437098 |
0.534 |
|
| 2007 |
Roucka R, Tolle J, Forrest B, Kouvetakis J, D'costa VR, Meńndez J. Ge1-y Sny Si (100) composite substrates for growth of Inx Ga1-x As and Ga As1-x Sbx alloys Journal of Applied Physics. 101. DOI: 10.1063/1.2407274 |
0.556 |
|
| 2007 |
Kouvetakis J, Chizmeshya AVG. New classes of Si-based photonic materials and device architectures via designer molecular routes Journal of Materials Chemistry. 17: 1649-1655. DOI: 10.1039/B618416B |
0.534 |
|
| 2007 |
Fang YY, Tolle J, Tice J, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Menéndez J. Epitaxy-driven synthesis of elemental Ge/Si strain-engineered materials and device structures via designer molecular chemistry Chemistry of Materials. 19: 5910-5925. DOI: 10.1021/Cm071581V |
0.559 |
|
| 2007 |
Chizmeshya AVG, Ritter CJ, Groy TL, Tice JB, Kouvetakis J. Synthesis of molecular adducts of beryllium, boron, and gallium cyanides: Theoretical and experimental correlations between solid-state and molecular analogues Chemistry of Materials. 19: 5890-5901. DOI: 10.1021/Cm071275H |
0.732 |
|
| 2007 |
D'Costa VR, Tolle J, Roucka R, Poweleit CD, Kouvetakis J, Menéndez J. Raman scattering in Ge1-ySny alloys Solid State Communications. 144: 240-244. DOI: 10.1016/J.Ssc.2007.08.020 |
0.318 |
|
| 2007 |
Chizmeshya AVG, Ritter C, Tolle J, Cook C, Menendez J, Kouvetakis J. Fundamental Studies of P(GeH3)3, As(GeH3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors. Cheminform. 38. DOI: 10.1002/chin.200710018 |
0.691 |
|
| 2007 |
Ritter C, Chizmeshya AVG, Gray TL, Kouvetakis J. Synthesis and structures of M(Me3SiNCHNSiMe3) 3 (M = Al, Ga) via reactions of M-hydrides with Me 3SiNCNSiMe3 Applied Organometallic Chemistry. 21: 595-600. DOI: 10.1002/Aoc.1277 |
0.716 |
|
| 2006 |
Chizmeshya AV, Ritter CJ, Hu C, Tice JB, Tolle J, Nieman RA, Tsong IS, Kouvetakis J. Synthesis of butane-like SiGe hydrides: enabling precursors for CVD of Ge-rich semiconductors. Journal of the American Chemical Society. 128: 6919-30. PMID 16719472 DOI: 10.1021/Ja060428J |
0.825 |
|
| 2006 |
Soref R, Kouvetakis J, Menendez J. Advances in SiGeSn/Ge Technology Mrs Proceedings. 958. DOI: 10.1557/Proc-0958-L01-08 |
0.57 |
|
| 2006 |
Kouvetakis J, Menendez J, Chizmeshya AVG. Tin-based group IV semiconductors: New platforms for opto- and microelectronics on silicon Annual Review of Materials Research. 36: 497-554. DOI: 10.1146/Annurev.Matsci.36.090804.095159 |
0.466 |
|
| 2006 |
D'Costa VR, Cook CS, Birdwell AG, Littler CL, Canonico M, Zollner S, Kouvetakis J, Menéndez J. Optical critical points of thin-film Ge1-y Sny alloys: A comparative Ge1-y Sny Ge1-x six study Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.125207 |
0.658 |
|
| 2006 |
Tolle J, Chizmeshya AVG, Fang YY, Kouvetakis J, D'Costa VR, Hu CW, Menéndez J, Tsong IST. Low temperature chemical vapor deposition of Si-based compounds via SiH 3SiH 2SiH 3: Metastable SiSn/GeSn/Si(100) heteroepitaxial structures Applied Physics Letters. 89. DOI: 10.1063/1.2403903 |
0.56 |
|
| 2006 |
Roucka R, An Y, Chizmeshya AVG, Tolle J, Kouvetakis J, D'Costa VR, Menéndez J, Crozier P. Epitaxial semimetallic Hf xZr 1-xB 2 templates for optoelectronic integration on silicon Applied Physics Letters. 89. DOI: 10.1063/1.2403189 |
0.535 |
|
| 2006 |
Wang ZT, Yamada-Takamura Y, Fujikawa Y, Sakurai T, Xue QK, Tolle J, Kouvetakis J, Tsong IST. Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular-beam epitaxy Journal of Applied Physics. 100. DOI: 10.1063/1.2218763 |
0.448 |
|
| 2006 |
Tolle J, Roucka R, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Menéndez J. Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon Applied Physics Letters. 88. DOI: 10.1063/1.2213014 |
0.453 |
|
| 2006 |
Chizmeshya AVG, Ritter C, Tolle J, Cook C, Menéndez J, Kouvetakis J. Fundamental Studies of P(GeH3)3, As(GeH 3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors Chemistry of Materials. 18: 6266-6277. DOI: 10.1021/Cm061696J |
0.828 |
|
| 2006 |
D'Costa VR, Cook CS, Menéndez J, Tolle J, Kouvetakis J, Zollner S. Transferability of optical bowing parameters between binary and ternary group-IV alloys Solid State Communications. 138: 309-313. DOI: 10.1016/J.Ssc.2006.02.023 |
0.623 |
|
| 2005 |
Yamada-Takamura Y, Wang ZT, Fujikawa Y, Sakurai T, Xue QK, Tolle J, Liu PL, Chizmeshya AV, Kouvetakis J, Tsong IS. Surface and interface studies of GaN epitaxy on Si(111) via buffer layers. Physical Review Letters. 95: 266105. PMID 16486376 DOI: 10.1103/Physrevlett.95.266105 |
0.496 |
|
| 2005 |
Ritter CJ, Hu C, Chizmeshya AV, Tolle J, Klewer D, Tsong IS, Kouvetakis J. Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si. Journal of the American Chemical Society. 127: 9855-64. PMID 15998091 DOI: 10.1021/Ja051411O |
0.818 |
|
| 2005 |
Tolle J, Roucka R, D'Costa V, Menendez J, Chizmeshya A, Kouvetakis J. Sn-based Group-IV Semiconductors on Si: New Infrared Materials and New Templates for Mismatched Epitaxy Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee12-08 |
0.525 |
|
| 2005 |
Liu PL, Chizmeshya AVG, Kouvetakis J, Tsong IST. First-principles studies of GaN(0001) heteroepitaxy on ZrB2(0001) Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.245335 |
0.373 |
|
| 2005 |
Hu CW, Meńndez J, Tsong IST, Tolle J, Chizmeshya AVG, Ritter C, Kouvetakis J. Low-temperature pathways to Ge-rich Si 1-x Ge x alloys via single-source hydride chemistry Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117620 |
0.818 |
|
| 2005 |
Trivedi RA, Tolle J, Chizmeshya AVG, Roucka R, Ritter C, Kouvetakis J, Tsong IST. Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation Applied Physics Letters. 87. DOI: 10.1063/1.2012519 |
0.785 |
|
| 2005 |
Hu C, Tsong IST, D'Costa V, Meńndez J, Crozier PA, Tolle J, Kouvetakis J. Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH 3) 4-nSiH n hydrides Applied Physics Letters. 87. DOI: 10.1063/1.2011792 |
0.574 |
|
| 2005 |
Cook CS, D'Costa V, Kouvetakis J, Zollner S, Menéndez J. Compositional dependence of critical point transitions in Ge 1-xSn x alloys Aip Conference Proceedings. 772: 65-66. DOI: 10.1063/1.1993997 |
0.586 |
|
| 2005 |
Roucka R, Tolle J, Cook C, Chizmeshya AVG, Kouvetakis J, D'Costa V, Menendez J, Chen ZD, Zollner S. Versatile buffer layer architectures based on Ge 1- x Sn x alloys Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922078 |
0.702 |
|
| 2005 |
Trivedi R, Liu PL, Roucka R, Tolle J, Chizmeshya AVG, Tsong IST, Kouvetakis J. Mismatched heteroepitaxy of tetrahedral semiconductors with Si via ZrB 2 templates Chemistry of Materials. 17: 4647-4652. DOI: 10.1021/Cm0510918 |
0.55 |
|
| 2005 |
Roucka R, Tolle J, Chizmeshya AVG, Tsong IST, Kouvetakis J. Epitaxial film growth of zirconium diboride on Si(0 0 1) Journal of Crystal Growth. 277: 364-371. DOI: 10.1016/J.Jcrysgro.2005.01.080 |
0.538 |
|
| 2004 |
Menéndez J, Kouvetakis J. Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap Applied Physics Letters. 85: 1175-1177. DOI: 10.1063/1.1784032 |
0.382 |
|
| 2004 |
Tolle J, Kouvetakis J, Kim DW, Mahajan S, Bell A, Ponce FA, Tsong IST, Kottke ML, Chen ZD. Epitaxial growth of Al xGa 1-xN on Si(111) via a ZrB 2(0001) buffer layer Applied Physics Letters. 84: 3510-3512. DOI: 10.1063/1.1738944 |
0.511 |
|
| 2004 |
Crozier PA, Tolle J, Kouvetakis J, Ritter C. Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D 2GaN 3 Applied Physics Letters. 84: 3441-3443. DOI: 10.1063/1.1736314 |
0.739 |
|
| 2004 |
Li SF, Bauer MR, Menéndez J, Kouvetakis J. Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys Applied Physics Letters. 84: 867-869. DOI: 10.1063/1.1645667 |
0.402 |
|
| 2004 |
Aella P, Cook C, Tolle J, Zollner S, Chizmeshya AVG, Kouvetakis J. Optical and structural properties of Si xSn yGe 1-x-y alloys Applied Physics Letters. 84: 888-890. DOI: 10.1063/1.1645324 |
0.721 |
|
| 2004 |
Crozier PA, Tolle J, Kouvetakis J, Ritter C. Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3 Microscopy and Microanalysis. 10: 356-357. DOI: 10.1017/S1431927604887336 |
0.679 |
|
| 2004 |
Cook CS, Zollner S, Bauer MR, Aella P, Kouvetakis J, Menendez J. Optical constants and interband transitions of Ge1-xSn x alloys (x<0.2) grown on Si by UHV-CVD Thin Solid Films. 455: 217-221. DOI: 10.1016/J.Tsf.2003.11.277 |
0.703 |
|
| 2004 |
Hu CW, Chizmeshya AVG, Tolle J, Kouvetakis J, Tsong IST. Nucleation and growth of epitaxial ZrB2(0 0 0 1) on Si(1 1 1) Journal of Crystal Growth. 267: 554-563. DOI: 10.1016/J.Jcrysgro.2004.04.020 |
0.517 |
|
| 2003 |
Steffek C, McMurran J, Pleune B, Kouvetakis J, Concolino TE, Rheingold AL. Synthesis of Cl2InN3, Br2InN3, and related adducts. Inorganic Chemistry. 39: 1615-7. PMID 12526476 DOI: 10.1021/Ic990387A |
0.311 |
|
| 2003 |
Bauer MR, Cook CS, Aella P, Tolle J, Kouvetakis J, Crozier PA, Chizmeshya AVG, Smith DJ, Zollner S. SnGe superstructure materials for Si-based infrared optoelectronics Applied Physics Letters. 83: 3489-3491. DOI: 10.1063/1.1622435 |
0.731 |
|
| 2003 |
Bauer M, Ritter C, Crozier PA, Ren J, Menendez J, Wolf G, Kouvetakis J. Synthesis of ternary SiGeSn semiconductors on Si(100) via Sn xGe1-x buffer layers Applied Physics Letters. 83: 2163-2165. DOI: 10.1063/1.1606104 |
0.803 |
|
| 2003 |
Hu C, Taraci JL, Tolle J, Bauer MR, Crozier PA, Tsong IST, Kouvetakis J. Synthesis of Highly Coherent SiGe and Si4Ge Nanostructures by Molecular Beam Epitaxy of H3SiGeH3 and Ge(SiH3)4. Cheminform. 34. DOI: 10.1021/Cm034477W |
0.849 |
|
| 2003 |
Hu C, Taraci JL, Tolle J, Bauer MR, Crozier PA, Tsong IST, Kouvetakis J. Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of H3SiGeH3 and Ge(SiH 3)4 Chemistry of Materials. 15: 3569-3572. DOI: 10.1021/cm034477w |
0.848 |
|
| 2003 |
Chizmeshya AVG, Bauer MR, Kouvetakis J. Experimental and theoretical study of deviations from Vegard's law in the SnxGe1-x system Chemistry of Materials. 15: 2511-2519. DOI: 10.1021/Cm0300011 |
0.404 |
|
| 2003 |
Torrison L, Tolle J, Kouvetakis J, Dey SK, Gu D, Tsong IST, Crozier PA. Stoichiometric and non-stoichiometric films in the Si-O-N system: Mechanical, electrical, and dielectric properties Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 97: 54-58. DOI: 10.1016/S0921-5107(02)00402-6 |
0.844 |
|
| 2003 |
Roucka R, Tolle J, Chizmeshya AVG, Crozier PA, Poweleit CD, Smith DJ, Kouvetakis J, Tsong IST. Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN Applied Surface Science. 212: 872-878. DOI: 10.1016/S0169-4332(03)00391-X |
0.516 |
|
| 2003 |
Torrison L, Tolle J, Tsong IST, Kouvetakis J. Growth and optical properties of epitaxial GaN films on Si(1 1 1) using single gas-source molecular beam epitaxy Thin Solid Films. 434: 106-111. DOI: 10.1016/S0040-6090(03)00461-9 |
0.843 |
|
| 2003 |
Bauer MR, Tolle J, Bungay C, Chizmeshya AVG, Smith DJ, Menéndez J, Kouvetakis J. Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates Solid State Communications. 127: 355-359. DOI: 10.1016/S0038-1098(03)00446-0 |
0.526 |
|
| 2002 |
Roucka R, Tolle J, Chizmeshya AV, Crozier PA, Poweleit CD, Smith DJ, Tsong IS, Kouvetakis J. Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN. Physical Review Letters. 88: 206102. PMID 12005580 DOI: 10.1103/Physrevlett.88.206102 |
0.437 |
|
| 2002 |
Bauer MR, Tolle J, Chizmeshya AVG, Zollner S, Menendez J, Kouvetakis J. New Ge-Sn materials with adjustable bandgaps and lattice constants Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M2.5 |
0.511 |
|
| 2002 |
Torrison L, Tolle J, Smith DJ, Poweleit C, Menendez J, Mitan MM, Alford TL, Kouvetakis J. Morphological and optical properties of Si nanostructures imbedded in SiO2 and Si3N4 films grown by single source chemical vapor deposition Journal of Applied Physics. 92: 7475-7480. DOI: 10.1063/1.1525046 |
0.835 |
|
| 2002 |
Bauer M, Taraci J, Tolle J, Chizmeshya AVG, Zollner S, Smith DJ, Menendez J, Hu C, Kouvetakis J. Ge-Sn semiconductors for band-gap and lattice engineering Applied Physics Letters. 81: 2992-2994. DOI: 10.1063/1.1515133 |
0.535 |
|
| 2002 |
Tolle J, Roucka R, Crozier PA, Chizmeshya AVG, Tsong IST, Kouvetakis J. Growth of SiCAlN on Si(111) via a crystalline oxide interface Applied Physics Letters. 81: 2181-2183. DOI: 10.1063/1.1507358 |
0.573 |
|
| 2002 |
Tolle J, Roucka R, Chizmeshya AV, Crozier PA, Smith D, Tsong IS, Kouvetakis J. Novel synthetic pathways to wide bandgap semiconductors in the Si–C–Al–N system Solid State Sciences. 4: 1509-1519. DOI: 10.1016/S1293-2558(02)00047-X |
0.551 |
|
| 2001 |
Taraci J, Zollner S, McCartney MR, Menendez J, Santana-Aranda MA, Smith DJ, Haaland A, Tutukin AV, Gundersen G, Wolf G, Kouvetakis J. Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods. Journal of the American Chemical Society. 123: 10980-7. PMID 11686702 DOI: 10.1021/Ja0115058 |
0.841 |
|
| 2001 |
Kouvetakis J, McMurran J, Steffek C, Groy TL, Hubbard JL. Synthesis and structures of heterocyclic azidogallanes [(CH3)ClGaN3]4 and [(CH3)BrGaN3]3 en route to [(CH3)HGaN3]x: an inorganic precursor to GaN. Inorganic Chemistry. 39: 3805-9. PMID 11196773 DOI: 10.1021/Ic000053H |
0.308 |
|
| 2001 |
Taraci J, Zollner S, McCartney MR, Menendez J, Smith DJ, Tolle J, Bauer M, Duda E, Edwards NV, Kouvetakis J. Optical Vibrational and Structural Properties of Ge1−xSn x alloys by UHV-CVD Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H11.4.1 |
0.83 |
|
| 2001 |
Torrison L, Groy TL, Kouvetakis J. Crystal structure of bis(trimethylamine) dichlorodeuteroalane, [N(CH3)3]2C12DAl Zeitschrift FüR Kristallographie - New Crystal Structures. 216. DOI: 10.1524/Ncrs.2001.216.14.489 |
0.762 |
|
| 2001 |
Kouvetakis J, McMurran J, Steffek C, Groy TL, Hubbard JL, Torrison L. SYNTHESIS OF NEW AZIDOALANES WITH HETEROCYCLIC MOLECULAR STRUCTURES Main Group Metal Chemistry. 24. DOI: 10.1515/Mgmc.2001.24.2.77 |
0.767 |
|
| 2001 |
Smith DJ, Todd M, McMurran J, Kouvetakis J. Structural properties of heteroepitaxial germanium-carbon alloys grown on Si (100) Philosophical Magazine A. 81: 1613-1624. DOI: 10.1080/01418610108214365 |
0.502 |
|
| 2001 |
Nielsen JF, Pelz JP, Hibino H, Hu CW, Tsong IST, Kouvetakis J. Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure Applied Physics Letters. 79: 3857-3859. DOI: 10.1063/1.1421084 |
0.433 |
|
| 2001 |
Roucka R, Tolle J, Smith DJ, Crozier P, Tsong IST, Kouvetakis J. Low-temperature growth of SiCalN films of high hardness on Si(111) substrates Applied Physics Letters. 79: 2880-2882. DOI: 10.1063/1.1413723 |
0.518 |
|
| 2001 |
Taraci J, Tolle J, Kouvetakis J, McCartney MR, Smith DJ, Menendez J, Santana MA. Simple chemical routes to diamond-cubic germanium–tin alloys Applied Physics Letters. 78: 3607-3609. DOI: 10.1063/1.1376156 |
0.847 |
|
| 2001 |
Chirita M, Xia H, Sooryakumar R, Tolle JB, Torres VM, Wilkens BJ, Smith DJ, Kouvetakis J, Tsong IST. Elastic properties of nanocrystalline zirconium-silicon-boron thin films Journal of Applied Physics. 89: 4349-4353. DOI: 10.1063/1.1354632 |
0.487 |
|
| 2001 |
Williams D, Pleune B, Leinenweber K, Kouvetakis J. Synthesis and Structural Properties of the Binary Framework C–N Compounds of Be, Mg, Al, and Tl Journal of Solid State Chemistry. 159: 244-250. DOI: 10.1006/Jssc.2001.9192 |
0.378 |
|
| 2000 |
Kouvetakis J, Ritter C, Groy TL. The centrosymmetric dimer of dichloro(trimethylsiloxy)aluminium Acta Crystallographica Section C Crystal Structure Communications. 56: e564-e564. DOI: 10.1107/S0108270100017261 |
0.698 |
|
| 2000 |
Kouvetakis J, Groy TL. 2,4,6-Tris[2-(trimethylsilyl)ethynyl]-1,3,5-triazene: a novel precursor to C–N two-dimensional structures Acta Crystallographica Section C Crystal Structure Communications. 56: e533-e533. DOI: 10.1107/S0108270100014165 |
0.351 |
|
| 2000 |
Williams D, Pleune B, Kouvetakis J, Williams MD, Andersen RA. Synthesis of LiBC4N4, BC3N3, and related C-N compounds of boron: New precursors to light element ceramics Journal of the American Chemical Society. 122: 7735-7741. DOI: 10.1021/Ja0006752 |
0.338 |
|
| 1999 |
Nesting DC, Kouvetakis J, Hearne S, Chason E, Tsong IST. Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 17: 891-894. DOI: 10.1116/1.581661 |
0.419 |
|
| 1999 |
Nesting DC, Kouvetakis J, Smith DJ. Morphological control and structural characteristics of crystalline Ge–C systems: Carbide nanorods, quantum dots, and epitaxial heterostructures Applied Physics Letters. 74: 958-960. DOI: 10.1063/1.123422 |
0.545 |
|
| 1999 |
McMurran J, Kouvetakis J, Smith DJ. Development of a low-temperature GaN chemical vapor deposition process based on a single molecular source H2GaN3 Applied Physics Letters. 74: 883-885. DOI: 10.1063/1.123398 |
0.454 |
|
| 1998 |
McMurran J, Dai D, Balasubramanian K, Steffek C, Kouvetakis J, Hubbard JL. H(2)GaN(3) and Derivatives: A Facile Method to Gallium Nitride. Inorganic Chemistry. 37: 6638-6644. PMID 11670795 DOI: 10.1021/Ic981022D |
0.4 |
|
| 1998 |
Nesting D, McMurran J, Kouvetakis J. Synthesis of (Si2Ge)Cx and Related Ge1-xCx Phases in The Si-Ge-C System Mrs Proceedings. 547. DOI: 10.1557/Proc-547-475 |
0.509 |
|
| 1998 |
Nesting DC, Kouvetakis J, Lorentzen J, Menéndez J. The Application of Novel Chemical Precursors for the Preparation of Si-Ge-C Heterostructures and Superlattices Mrs Proceedings. 533. DOI: 10.1557/Proc-533-281 |
0.515 |
|
| 1998 |
Chandrasekhar D, McMurran J, Smith DJ, Kouvetakis J, Lorentzen JD, Menéndez J. Strategies for the synthesis of highly concentrated Si1-yCy diamond-structured systems Applied Physics Letters. 72: 2117-2119. DOI: 10.1063/1.121294 |
0.513 |
|
| 1998 |
Kouvetakis J, Chandrasekhar D, Smith DJ. Growth and characterization of thin Si80C20 films based upon Si4C building blocks Applied Physics Letters. 72: 930-932. DOI: 10.1063/1.120876 |
0.538 |
|
| 1998 |
Kouvetakis J, Haaland A, Shorokhov DJ, Volden HV, Girichev GV, Sokolov VI, Matsunaga P. Novel Methods for CVD of Ge4C and (Ge4C)xSiyDiamond-like Semiconductor Heterostructures: Synthetic Pathways and Structures of Trigermyl-(GeH3)3CH and Tetragermyl-(GeH3)4C Methanes Journal of the American Chemical Society. 120: 6738-6744. DOI: 10.1021/Ja9810033 |
0.327 |
|
| 1998 |
McMurran J, Kouvetakis J, Nesting DC, Smith DJ, Hubbard JL. Formation of a Tetrameric, Cyclooctane-like, Azidochlorogallane, [HClGaN3]4, and Related Azidogallanes. Exothermic Single-Source Precursors to GaN Nanostructures Journal of the American Chemical Society. 120: 5233-5237. DOI: 10.1021/Ja980404F |
0.485 |
|
| 1998 |
Kouvetakis J, Nesting D, Smith DJ. Synthesis and Atomic and Electronic Structure of New Si−Ge−C Alloys and Compounds Chemistry of Materials. 10: 2935-2949. DOI: 10.1021/Cm980294B |
0.515 |
|
| 1998 |
Kouvetakis J, Nesting D, O'Keeffe M, Smith DJ. Ordered Structures in Unstrained, Epitaxial Ge−Si−C Films Chemistry of Materials. 10: 1396-1401. DOI: 10.1021/Cm970800H |
0.442 |
|
| 1998 |
McMurran J, Kouvetakis J, Nesting DC, Hubbard JL. Synthesis of Molecular Precursors to Carbon−Nitrogen−Phosphorus Polymeric Systems Chemistry of Materials. 10: 590-593. DOI: 10.1021/Cm9705799 |
0.389 |
|
| 1997 |
Brousseau LC, Williams D, Kouvetakis J, O'Keeffe M. Synthetic Routes to Ga(CN)3and MGa(CN)4(M = Li, Cu) Framework Structures Journal of the American Chemical Society. 119: 6292-6296. DOI: 10.1021/Ja9702024 |
0.347 |
|
| 1997 |
Haaland A, Shorokhov DJ, Strand TG, Kouvetakis J, O'Keeffe M. Molecular Structure of C(GeBr3)4Determined by Gas-Phase Electron Diffraction and Density Functional Theory Calculations: Implications for the Length and Stability of Ge−C Bonds in Crystalline Semiconductor Solids Inorganic Chemistry. 36: 5198-5201. DOI: 10.1021/Ic970582U |
0.334 |
|
| 1997 |
Chandrasekhar D, Smith DJ, Kouvetakis J. Characterization of Sil-ycy Alloy Layers Incorporating Si4c Building Blocks Microscopy and Microanalysis. 3: 457-458. DOI: 10.1017/S143192760000917X |
0.331 |
|
| 1997 |
Williams DJ, Partin DE, Lincoln FJ, Kouvetakis J, O'Keeffe M. The Disordered Crystal Structures of Zn(CN)2and Ga(CN)3 Journal of Solid State Chemistry. 134: 164-169. DOI: 10.1006/Jssc.1997.7571 |
0.303 |
|
| 1996 |
Kouvetakis J, O’Keeffe M, Brouseau L, McMurran J, Williams D, Smith DJ. New Pathways to Heteroepitaxial GaN by Inorganic CVD Synthesis and Characterization of Related Ga-C-N Novel Systems Mrs Proceedings. 449. DOI: 10.1557/Proc-449-313 |
0.448 |
|
| 1996 |
Chandrasekhar D, Kouvetakis J, Murran JM, Todd M, Smith DJ. New Silicon-Carbon Materials Incorporating Si4C Building Blocks Mrs Proceedings. 441. DOI: 10.1557/Proc-441-723 |
0.504 |
|
| 1996 |
McMurran J, Todd M, Kouvetakis J, Smith DJ. Low temperature inorganic chemical vapor deposition of heteroepitaxial GaN Applied Physics Letters. 69: 203-205. DOI: 10.1063/1.117372 |
0.498 |
|
| 1996 |
Todd M, Kouvetakis J, Smith DJ. Synthesis and characterization of heteroepitaxial diamond‐structured Ge1−xCx (x=1.5–5.0%) alloys using chemical vapor deposition Applied Physics Letters. 68: 2407-2409. DOI: 10.1063/1.116149 |
0.501 |
|
| 1996 |
Todd M, McMurran J, Kouvetakis J, Smith DJ. Chemical Synthesis of Metastable Germanium−Carbon Alloys Grown Heteroepitaxially on (100) Si Chemistry of Materials. 8: 2491-2498. DOI: 10.1021/Cm960211W |
0.485 |
|
| 1995 |
Drucker J, Sharma R, Weiss K, Ramakrishna BL, Kouvetakis J. In Situ Real Time Observation of Chemical Vapor Deposition Using an Environmental Transmission Electron Microscope Mrs Proceedings. 404. DOI: 10.1557/Proc-404-75 |
0.415 |
|
| 1995 |
Kouvetakis J, McMurran J, Beach DB, Smith DJ. Growth of GaN on (100)Si Using a New C-H and N-H Free Single-Source Precursor Mrs Proceedings. 395. DOI: 10.1557/Proc-395-79 |
0.497 |
|
| 1995 |
Kouvetakis J, SharmA R, Ramakrisna BL, Drucker J, Seidler P. Electron Beam Assisted Chemical Vapor Deposition of Gold in an Environmental Tem Mrs Proceedings. 388. DOI: 10.1557/Proc-388-323 |
0.431 |
|
| 1995 |
Todd M, Kouvetakis J, Matsunaga P, Chandrasekhar D, Smith D. Influence of Precursor Chemistry on Synthesis of Silicon-Carbon-Germanium Alloys Mrs Proceedings. 377. DOI: 10.1557/Proc-377-529 |
0.506 |
|
| 1995 |
Drucker J, Sharma R, Weiss K, Kouvetakis J. In situ, real‐time observation of Al chemical‐vapor deposition on SiO2 in an environmental transmission electron microscope Journal of Applied Physics. 77: 2846-2848. DOI: 10.1063/1.358699 |
0.413 |
|
| 1995 |
Todd M, Matsunaga P, Kouvetakis J, Chandrasekhar D, Smith DJ. Growth of heteroepitaxial Si 1-<ITALIC>x-<ITALIC>yGe<ITALIC>x< BOLD>C<ITALIC>y alloys on silicon using novel deposition chemistry Applied Physics Letters. 67: 1247. DOI: 10.1063/1.114386 |
0.526 |
|
| 1994 |
Kouvetakis J, Todd M, Chandrasekhar D, Smith DJ. Novel chemical routes to silicon-germanium-carbon materials Applied Physics Letters. 65: 2960-2962. DOI: 10.1063/1.112504 |
0.569 |
|
| 1994 |
Kouvetakis J, Todd M, Wilkens B, Bandari A, Cave N. Novel Synthetic Routes to Carbon-Nitrogen Thin Films Chemistry of Materials. 6: 811-814. DOI: 10.1021/Cm00042A018 |
0.334 |
|
| 1994 |
Chandrasekhar D, Smith DJ, Kouvetakis J, Robinson M. TEM characterization of SiGeC material system Proceedings, Annual Meeting, Electron Microscopy Society of America. 52: 840-841. DOI: 10.1017/s0424820100171936 |
0.437 |
|
| 1994 |
Kouvetakis J, McElfresh MW, Beach DB. Chemical vapor deposition of highly conductive boron-doped graphite from triphenyl boron Carbon. 32: 1129-1132. DOI: 10.1016/0008-6223(94)90221-6 |
0.415 |
|
| 1993 |
Kouvetakis J, Brewer L. Calculation of thermodynamic properties of metastable phases of the elements Journal of Phase Equilibria. 14: 563-571. DOI: 10.1007/Bf02669135 |
0.313 |
|
| 1990 |
Kouvetakis J, Patel VV, Miller CW, Beach DB. Composition and structure of boron nitride films deposited by chemical vapor deposition from borazine Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 8: 3929-3933. DOI: 10.1116/1.576423 |
0.405 |
|
| 1989 |
Kouvetakis J, Beach DB. Chemical vapor deposition of gallium nitride from diethylgallium azide Chemistry of Materials. 1: 476-478. DOI: 10.1021/Cm00004A017 |
0.362 |
|
| 1989 |
Kouvetakis J, Sasaki T, Shen C, Hagiwara R, Lerner M, Krishnan K, Bartlett N. Novel aspects of graphite intercalation by fluorine and fluorides and new B/C, C/N and B/C/N materials based on the graphite network Synthetic Metals. 34: 1-7. DOI: 10.1016/0379-6779(89)90355-X |
0.618 |
|
| 1988 |
Krishnan KM, Kouvetakis J, Sasaki T, Bartlett N. Characterization of Newly Synthesized Novel Graphite Films Mrs Proceedings. 121. DOI: 10.1557/Proc-121-527 |
0.599 |
|
| 1987 |
Kaner R, Kouvetakis J, Warble C, Sattler M, Bartlett N. Boron-carbon-nitrogen materials of graphite-like structure Materials Research Bulletin. 22: 399-404. DOI: 10.1016/0025-5408(87)90058-4 |
0.525 |
|
| 1987 |
KOUVETAKIS J, KANER RB, SATTLER ML, BARTLETT N. ChemInform Abstract: A Novel Graphite-Like Material of Composition BC3, and Nitrogen-Carbon Graphites. Cheminform. 18. DOI: 10.1002/chin.198722021 |
0.385 |
|
| 1986 |
Kaner RB, Kouvetakis J, Mayorga SG. Structure of chloro(η5-pentamethylcyclopentadienyl)bis(trimethylphosphine)iridum(III) hexafluorophosphate Acta Crystallographica Section C Crystal Structure Communications. 42: 500-501. DOI: 10.1107/S0108270186095653 |
0.387 |
|
| 1986 |
Kouvetakis J, Kaner RB, Sattler ML, Bartlett N. A novel graphite-like material of composition BC3, and nitrogen–carbon graphites Journal of the Chemical Society, Chemical Communications. 1758-1759. DOI: 10.1039/C39860001758 |
0.647 |
|
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