| Year |
Citation |
Score |
| 2018 |
Zeng Q, Xu Z, Zheng C, Liu Y, Chen W, Guo T, Li F, Xiang C, Yang Y, Cao W, Xie X, Yan X, Qian L, Holloway P. Improving Charge Injection via Blade Coating Molybdenum Oxide Layer: toward High Performance Large-area Quantum Dot Light-emitting Diodes. Acs Applied Materials & Interfaces. PMID 29424226 DOI: 10.1021/Acsami.7B19333 |
0.353 |
|
| 2015 |
Yang Y, Zheng Y, Cao W, Titov A, Hyvonen J, Manders JR, Xue J, Holloway PH, Qian L. High-efficiency light-emitting devices based on quantum dots with tailored nanostructures Nature Photonics. 9: 259-265. DOI: 10.1038/Nphoton.2015.36 |
0.313 |
|
| 2015 |
Manders JR, Qian L, Titov A, Hyvonen J, Tokarz-Scott J, Acharya KP, Yang Y, Cao W, Zheng Y, Xue J, Holloway PH. High efficiency and ultra-wide color gamut quantum dot LEDs for next generation displays Journal of the Society For Information Display. 23: 523-528. DOI: 10.1002/Jsid.393 |
0.315 |
|
| 2014 |
Plaisant M, Ntwaeaborwa OM, Swart HC, Holloway PH. Nanostructure of CdxZn1-xSe heterogeneous nanorods Physica B: Condensed Matter. 439: 72-76. DOI: 10.1016/J.Physb.2013.11.053 |
0.403 |
|
| 2013 |
Zhou R, Stalder R, Xie D, Cao W, Zheng Y, Yang Y, Plaisant M, Holloway PH, Schanze KS, Reynolds JR, Xue J. Enhancing the efficiency of solution-processed polymer:colloidal nanocrystal hybrid photovoltaic cells using ethanedithiol treatment. Acs Nano. 7: 4846-54. PMID 23668301 DOI: 10.1021/Nn305823W |
0.341 |
|
| 2013 |
Holloway PH, Swart HC, Martin Ntwaeaborwa O. Electron-stimulated surface chemical reactions on phosphors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4808467 |
0.323 |
|
| 2012 |
Zhou R, Zheng Y, Qian L, Yang Y, Holloway PH, Xue J. Solution-processed, nanostructured hybrid solar cells with broad spectral sensitivity and stability. Nanoscale. 4: 3507-14. PMID 22543410 DOI: 10.1039/C2Nr30210A |
0.358 |
|
| 2012 |
Kim JH, Holloway PH. Luminescent properties and structural characteristics of sputter-deposited ZnGa 2O 4:Mn phosphor thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4738950 |
0.404 |
|
| 2012 |
Wang PH, Liu B, Shen Y, Zheng Y, McCarthy MA, Holloway P, Rinzler AG. N-channel carbon nanotube enabled vertical field effect transistors with solution deposited ZnO nanoparticle based channel layers Applied Physics Letters. 100. DOI: 10.1063/1.4709618 |
0.303 |
|
| 2012 |
Yang J, Qian L, Zhou R, Zheng Y, Tang A, Holloway PH, Xue J. Hybrid polymer: Colloidal nanoparticle photovoltaic cells incorporating a solution-processed, multi-functioned ZnO nanocrystal layer Journal of Applied Physics. 111. DOI: 10.1063/1.3689154 |
0.331 |
|
| 2012 |
Ntwaeaborwa OM, Zhou R, Qian L, Pitale SS, Xue J, Swart HC, Holloway PH. Post-fabrication annealing effects on the performance of P3HT:PCBM solar cells with/without ZnO nanoparticles Physica B: Condensed Matter. 407: 1631-1633. DOI: 10.1016/J.Physb.2011.09.103 |
0.353 |
|
| 2011 |
Bera D, Maslov S, Lee J, Xue J, So F, Holloway PH. Optimization of down-conversion phosphor films for high efficiency white organic light-emitting diodes Journal of Photonics For Energy. 1. DOI: 10.1117/1.3642643 |
0.359 |
|
| 2011 |
Law E, Davidson M, Shepherd N, Holloway PH. Enhanced outcoupling of electroluminescence from ZnS: ErF3 thin films by a photonic crystal Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29: 0110031-0110037. DOI: 10.1116/1.3521494 |
0.806 |
|
| 2011 |
Davidson MR, Stoupin S, Devito D, Collingwood JF, Segre C, Holloway PH. Local compositional environment of Er in ZnS:ErF 3 thin film electroluminescent phosphors Journal of Applied Physics. 109. DOI: 10.1063/1.3549726 |
0.802 |
|
| 2011 |
Qian L, Yang J, Zhou R, Tang A, Zheng Y, Tseng TK, Bera D, Xue J, Holloway PH. Hybrid polymer-CdSe solar cells with a ZnO nanoparticle buffer layer for improved efficiency and lifetime Journal of Materials Chemistry. 21: 3814-3817. DOI: 10.1039/C0Jm03799K |
0.712 |
|
| 2011 |
Choi J, Tseng TK, Davidson M, Holloway PH. Enhanced photoluminescence from Gd2O3:Eu3+ nanocores with a Y2O3 thin shell Journal of Materials Chemistry. 21: 3113-3118. DOI: 10.1039/C0Jm03275A |
0.788 |
|
| 2011 |
Qian L, Zheng Y, Xue J, Holloway PH. Stable and efficient quantum-dot light-emitting diodes based on solution-processed multilayer structures Nature Photonics. 5: 543-548. DOI: 10.1038/Nphoton.2011.171 |
0.354 |
|
| 2011 |
Bera D, Maslov S, Qian L, Holloway PH. Low-temperature synthesis of red-emitting nanostructured La 2O2S2:Eu3+ phosphor Solid State Communications. 151: 164-168. DOI: 10.1016/J.Ssc.2010.10.040 |
0.387 |
|
| 2010 |
Tseng TK, Choi J, Jung DW, Davidson M, Holloway PH. Three-dimensional self-assembled hierarchical architectures of gamma-phase flowerlike bismuth oxide Acs Applied Materials and Interfaces. 2: 943-946. PMID 20423114 DOI: 10.1021/Am900812A |
0.756 |
|
| 2010 |
Bera D, Qian L, Tseng TK, Holloway PH. Quantum dots and their multimodal applications: A review Materials. 3: 2260-2345. DOI: 10.3390/Ma3042260 |
0.688 |
|
| 2010 |
Bera D, Maslov S, Qian L, Yoo JS, Holloway PH. Optimization of the yellow phosphor concentration and layer thickness for down-conversion of blue to white light Ieee/Osa Journal of Display Technology. 6: 645-651. DOI: 10.1109/Jdt.2010.2064284 |
0.329 |
|
| 2010 |
Tseng TK, Choi J, Davidson M, Holloway PH. Synthesis and luminescent characteristics of europium dopants in SiO 2/Gd2O3 core/shell scintillating nanoparticles Journal of Materials Chemistry. 20: 6111-6115. DOI: 10.1039/C0Jm00941E |
0.79 |
|
| 2010 |
Gorrie CW, Sigdel AK, Berry JJ, Reese BJ, Van Hest MFAM, Holloway PH, Ginley DS, Perkins JD. Effect of deposition distance and temperature on electrical, optical and structural properties of radio-frequency magnetron-sputtered gallium-doped zinc oxide Thin Solid Films. 519: 190-196. DOI: 10.1016/J.Tsf.2010.07.098 |
0.405 |
|
| 2010 |
Jacobsohn LG, Tornga SC, Bennett BL, Muenchausen RE, Ugurlu O, Tseng TK, Choi J, Holloway PH. Annealing effects on the photoluminescence yield of Gd2O 3:Eu nanoparticles produced by solution combustion synthesis Radiation Measurements. 45: 611-614. DOI: 10.1016/J.Radmeas.2009.11.019 |
0.765 |
|
| 2010 |
Qian L, Zheng Y, Choudhury KR, Bera D, So F, Xue J, Holloway PH. Electroluminescence from light-emitting polymer/ZnO nanoparticle heterojunctions at sub-bandgap voltages Nano Today. 5: 384-389. DOI: 10.1016/J.Nantod.2010.08.010 |
0.316 |
|
| 2010 |
Tseng TK, Choi J, Jacobsohn LG, Yukihara E, Davidson M, Holloway PH. Synthesis and luminescent characteristics of one-dimensional europium doped Gd2O3 phosphors Applied Physics a: Materials Science and Processing. 100: 1137-1142. DOI: 10.1007/S00339-010-5717-X |
0.785 |
|
| 2010 |
Chung PS, Holloway PH. Effects of solution processing on the photovoltaic response of poly(n-vinyl carbazole) films Journal of Applied Polymer Science. 117: 479-485. DOI: 10.1002/App.31428 |
0.353 |
|
| 2009 |
Seo S, Yang H, Holloway PH. Controlled shape growth of Eu- or Tb-doped luminescent Gd2O3 colloidal nanocrystals. Journal of Colloid and Interface Science. 331: 236-42. PMID 19027121 DOI: 10.1016/J.Jcis.2008.11.016 |
0.708 |
|
| 2009 |
Tseng T, Choi J, Davidson M, Holloway PH. Core/Shell Composite of Self-Assembled Hierarchical Bismuth Oxide/Europium Doped Gadolinium Oxide for Scintillating Detection Mrs Proceedings. 1207. DOI: 10.1557/Proc-1207-N07-25 |
0.759 |
|
| 2009 |
Tseng T, Choi J, Holloway PH. Structure and Luminescence of Europium-Doped Gadolinia-Based Core/Multi-Shell Scintillation Nanoparticles Mrs Proceedings. 1164. DOI: 10.1557/Proc-1164-L11-01 |
0.778 |
|
| 2009 |
Ntwaeaborwa OM, Swart HC, Kroon RE, Terblans JJ, Holloway PH. Synthesis, characterization, and luminescent properties of ZnO–SiO2:PbS Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 27: 767-769. DOI: 10.1116/1.3086645 |
0.38 |
|
| 2009 |
Qian L, Bera D, Tseng TK, Holloway PH. High efficiency photoluminescence from silica-coated CdSe quantum dots Applied Physics Letters. 94. DOI: 10.1063/1.3085968 |
0.694 |
|
| 2009 |
Lee H, Yang H, Holloway PH. Functionalized CdS nanospheres and nanorods Physica B: Condensed Matter. 404: 4364-4369. DOI: 10.1016/J.Physb.2009.09.020 |
0.771 |
|
| 2009 |
Seo S, Yang H, Holloway PH. Synthesis and properties of colloidal ternary ZnGa2O4:Eu3+ nanocrystals Journal of Luminescence. 129: 307-311. DOI: 10.1016/J.Jlumin.2008.10.010 |
0.701 |
|
| 2009 |
Chung PS, Holloway PH. Photoluminescence of solution processed poly n-vinyl carbazole films Journal of Applied Polymer Science. 114: 1-9. DOI: 10.1002/App.30542 |
0.373 |
|
| 2008 |
Qian L, Bera D, Holloway PH. Temporal evolution of white light emission from CdSe quantum dots. Nanotechnology. 19: 285702. PMID 21828736 DOI: 10.1088/0957-4484/19/28/285702 |
0.32 |
|
| 2008 |
Chung HH, Bradman NM, Davidson MR, Holloway PH. Dual wavelength photon sieves Optical Engineering. 47. DOI: 10.1117/1.3029672 |
0.764 |
|
| 2008 |
Bera D, Qian L, Holloway PH. Time-evolution of photoluminescence properties of ZnO/MgO core/shell quantum dots Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/18/182002 |
0.36 |
|
| 2008 |
Qian L, Bera D, Holloway PH. Effects of ultraviolet light irradiation on poly(vinlycarbazole) Applied Physics Letters. 92. DOI: 10.1063/1.2840157 |
0.321 |
|
| 2008 |
Bera D, Qian L, Sabui S, Santra S, Holloway PH. Photoluminescence of ZnO quantum dots produced by a sol-gel process Optical Materials. 30: 1233-1239. DOI: 10.1016/J.Optmat.2007.06.001 |
0.391 |
|
| 2007 |
Qian L, Bera D, Holloway PH. White light emission from single layer poly (n-vinylcarbazole) polymeric light-emitting devices by mixing singlet and triplet excimer emissions. The Journal of Chemical Physics. 127: 244707. PMID 18163695 DOI: 10.1063/1.2813431 |
0.347 |
|
| 2007 |
Ntwaeaborwa OM, Swart HC, Kroon RE, Botha JR, Holloway PH. Cathodoluminescence degradation of SiO2:Ce,Tb powder phosphors prepared by a sol-gel process Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 25: 1152-1155. DOI: 10.1116/1.2723771 |
0.345 |
|
| 2007 |
Glass W, Kale A, Shepherd N, Davidson M, DeVito D, Holloway PH. Sputter deposited electroluminescent zinc sulfide thin films doped with rare earths Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 25: 492-499. DOI: 10.1116/1.2718956 |
0.809 |
|
| 2007 |
Swart HC, Terblans JJ, Coetsee E, Ntwaeaborwa OM, Dhlamini MS, Nieuwoudt S, Holloway PH. Review on electron stimulated surface chemical reaction mechanism for phosphor degradation Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 25: 917-921. DOI: 10.1116/1.2539467 |
0.349 |
|
| 2007 |
DeVito DM, Argun AA, Law E, Davidson MR, Puga-Lambers M, Holloway PH. Effects of processing parameters on electroluminescence of rf magnetron sputter deposited ZnS:Er F3 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 225-231. DOI: 10.1116/1.2429679 |
0.783 |
|
| 2007 |
Chung P, Chung HH, Holloway PH. Phosphor coatings to enhance Si photovoltaic cell performance Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 61-66. DOI: 10.1116/1.2393298 |
0.445 |
|
| 2007 |
Lee H, Holloway PH, Yang H, Hardison L, Kleiman VD. Publisher’s Note: “Synthesis and characterization of colloidal ternary ZnCdSe semiconductor nanorods” [J. Chem. Phys. 125, 164711 (2006)] The Journal of Chemical Physics. 127: 029901. DOI: 10.1063/1.2735325 |
0.756 |
|
| 2007 |
Ismail AA, Abboudi M, Holloway P, El-Shall H. Photoluminescence from terbium doped silica-titania prepared by a sol-gel method Materials Research Bulletin. 42: 137-142. DOI: 10.1016/J.Materresbull.2006.05.002 |
0.341 |
|
| 2007 |
Bang J, Yang H, Abrams B, Holloway PH. Effects of electron beam current density and temperature on peak height ratios 5Dj/5D0 for cathodoluminescence of Ln2O2S:Eu3+ Journal of Luminescence. 126: 629-635. DOI: 10.1016/J.Jlumin.2006.10.020 |
0.764 |
|
| 2007 |
Lee H, Yang H, Holloway PH. Single-step growth of colloidal ternary ZnCdSe nanocrystals Journal of Luminescence. 126: 314-318. DOI: 10.1016/J.Jlumin.2006.08.052 |
0.782 |
|
| 2006 |
Bang J, Yang H, Holloway PH. Enhanced and stable green emission of ZnO nanoparticles by surface segregation of Mg. Nanotechnology. 17: 973-8. PMID 21727368 DOI: 10.1088/0957-4484/17/4/022 |
0.727 |
|
| 2006 |
Lee H, Holloway PH, Yang H, Hardison L, Kleiman VD. Synthesis and characterization of colloidal ternary ZnCdSe semiconductor nanorods. The Journal of Chemical Physics. 125: 164711. PMID 17092124 DOI: 10.1063/1.2363181 |
0.767 |
|
| 2006 |
Kim JH, Holloway PH. Microstructural differences in thin film ZnGa2O4:Mn phosphor produced by differences in sputtering gas pressure Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 24: 2164-2171. DOI: 10.1116/1.2359737 |
0.347 |
|
| 2006 |
Ntwaeaborwa O, Swart H, Kroon R, Holloway P, Botha J. Enhanced luminescence and degradation of SiO2:Ce,Tb powder phosphors prepared by a sol–gel process Journal of Physics and Chemistry of Solids. 67: 1749-1753. DOI: 10.1016/J.Jpcs.2006.04.002 |
0.332 |
|
| 2006 |
Ntwaeaborwa OM, Swart HC, Kroon RE, Holloway PH, Botha JR. Photoluminescence of cerium–europium co-doped SiO2 phosphor prepared by a sol–gel process Surface and Interface Analysis. 38: 458-461. DOI: 10.1002/Sia.2145 |
0.376 |
|
| 2006 |
Yang H, Santra S, Walter GA, Holloway PH. GdIII-functionalized fluorescent quantum dots as multimodal imaging probes Advanced Materials. 18: 2890-2894. DOI: 10.1002/Adma.200502665 |
0.551 |
|
| 2005 |
Yang H, Santra S, Holloway PH. Syntheses and applications of Mn-doped II-VI semiconductor nanocrystals. Journal of Nanoscience and Nanotechnology. 5: 1364-75. PMID 16193951 DOI: 10.1166/Jnn.2005.308 |
0.592 |
|
| 2005 |
Bang J, Yang H, Holloway PH. Enhanced luminescence of SiO2:Eu3+ by energy transfer from ZnO nanoparticles. The Journal of Chemical Physics. 123: 084709. PMID 16164323 DOI: 10.1063/1.2007647 |
0.721 |
|
| 2005 |
Santra S, Yang H, Stanley JT, Holloway PH, Moudgil BM, Walter G, Mericle RA. Rapid and effective labeling of brain tissue using TAT-conjugated CdS:Mn/ZnS quantum dots. Chemical Communications (Cambridge, England). 3144-6. PMID 15968352 DOI: 10.1039/B503234B |
0.511 |
|
| 2005 |
Santra S, Yang H, Holloway PH, Stanley JT, Mericle RA. Synthesis of water-dispersible fluorescent, radio-opaque, and paramagnetic CdS:Mn/ZnS quantum dots: a multifunctional probe for bioimaging. Journal of the American Chemical Society. 127: 1656-7. PMID 15700997 DOI: 10.1021/Ja0464140 |
0.555 |
|
| 2005 |
Yoo JS, Kim SH, Yoo WT, Hong GY, Kim KP, Rowland J, Holloway PH. Control of Spectral Properties of Strontium-Alkaline Earth-Silicate-Europium Phosphors for LED Applications Journal of the Electrochemical Society. 152: G382. DOI: 10.1149/1.1888365 |
0.369 |
|
| 2005 |
Rowland J, Yoo JS, Kim KH, Hummel RE, Holloway P. The stability of Y 3Al 5O 12:Ce, ZnSrCuAl, Y 2O 2S:Eu, and (Sr 0.98Ba 0.02) 2SiO 4:Eu under UV irradiation Electrochemical and Solid-State Letters. 8. DOI: 10.1149/1.1861897 |
0.691 |
|
| 2005 |
Alexander WB, Holloway PH, Davidson M, Bradman N, Sandoval J, Berg Lvd, Spiegel CS. Conduction characteristics in HgI 2 devices Proceedings of Spie. 5922. DOI: 10.1117/12.617989 |
0.767 |
|
| 2005 |
Park JH, Holloway PH. Interfacial reactions in nickel/titanium ohmic contacts to n-type silicon carbide Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 2530. DOI: 10.1116/1.2126677 |
0.323 |
|
| 2005 |
Kadam AA, Dhere NG, Holloway P, Law E. Study of molybdenum back contact layer to achieve adherent and efficient CIGS2 absorber thin-film solar cells Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1197-1201. DOI: 10.1116/1.1889440 |
0.793 |
|
| 2005 |
Park JH, Holloway PH. Effects of nickel and titanium thickness on nickel/titanium ohmic contacts to n-type silicon carbide Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 486. DOI: 10.1116/1.1868694 |
0.338 |
|
| 2005 |
Ntwaeaborwa OM, Holloway PH. Enhanced photoluminescence of Ce3+induced by an energy transfer from ZnO nanoparticles encapsulated in SiO2 Nanotechnology. 16: 865-868. DOI: 10.1088/0957-4484/16/6/042 |
0.383 |
|
| 2005 |
Yang H, Lee H, Holloway PH. Anisotropic growth of luminescent Eu3+- or Er3+-doped Gd2O3nanocrystals Nanotechnology. 16: 2794-2798. DOI: 10.1088/0957-4484/16/12/009 |
0.748 |
|
| 2005 |
Li YJ, Kwon YW, Jones M, Heo YW, Zhou J, Luo SC, Holloway PH, Douglas E, Norton DP, Park Z, Li S. Progress in semiconducting oxide-based thin-film transistors for displays Semiconductor Science and Technology. 20: 720-725. DOI: 10.1088/0268-1242/20/8/012 |
0.384 |
|
| 2005 |
Abrams BL, Williams L, Bang J, Holloway PH. Thermal quenching of cathodoluminescence from ZnS:Ag,Cl powder phosphors Journal of Applied Physics. 97: 033521. DOI: 10.1063/1.1847719 |
0.612 |
|
| 2005 |
Owings R, Exarhos G, Windisch C, Holloway P, Wen J. Process enhanced polaron conductivity of infrared transparent nickel–cobalt oxide Thin Solid Films. 483: 175-184. DOI: 10.1016/J.Tsf.2005.01.011 |
0.383 |
|
| 2005 |
Luo SC, Chung HH, Pashuck ET, Douglas EP, Holloway PH. Formation of bubbles on electrical contacts to polymer light-emitting diode devices Thin Solid Films. 478: 326-331. DOI: 10.1016/J.Tsf.2004.10.039 |
0.451 |
|
| 2005 |
Owings RR, Holloway PH, Exarhos GJ, Windisch CF. Effect of annealing and lithium substitution on conductivity in nickel-cobalt oxide spinel films Surface and Interface Analysis. 37: 424-431. DOI: 10.1002/Sia.2040 |
0.787 |
|
| 2004 |
Santra S, Yang H, Dutta D, Stanley JT, Holloway PH, Tan W, Moudgil BM, Mericle RA. TAT conjugated, FITC doped silica nanoparticles for bioimaging applications. Chemical Communications (Cambridge, England). 2810-1. PMID 15599418 DOI: 10.1039/B411916A |
0.545 |
|
| 2004 |
Abrams BL, Holloway PH. Role of the surface in luminescent processes. Chemical Reviews. 104: 5783-801. PMID 15584688 DOI: 10.1021/Cr020351R |
0.762 |
|
| 2004 |
Yang H, Holloway PH, Cunningham G, Schanze KS. CdS:Mn nanocrystals passivated by ZnS: synthesis and luminescent properties. The Journal of Chemical Physics. 121: 10233-40. PMID 15549899 DOI: 10.1063/1.1808418 |
0.615 |
|
| 2004 |
Yang H, Holloway PH, Santra S. Water-soluble silica-overcoated CdS:Mn/ZnS semiconductor quantum dots. The Journal of Chemical Physics. 121: 7421-6. PMID 15473814 DOI: 10.1063/1.1797071 |
0.569 |
|
| 2004 |
Williams LC, Norton D, Budai J, Holloway PH. Cathodoluminescence from thin film Zn2GeO4:Mn phosphor grown by pulsed laser deposition Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1767159 |
0.705 |
|
| 2004 |
Yi SS, Bae JS, Seo HJ, Jeong JH, Holloway PH. Luminescence behavior of Li-doped Gd2O3:Eu3+ thin film phosphors grown by pulsed laser ablation Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 1746-1750. DOI: 10.1116/1.1764813 |
0.41 |
|
| 2004 |
Jeong JH, Bae JS, Choi BC, Yi SS, Holloway PH. Luminescent characteristics of Se-doped ZnGa2O4:Mn thin film phosphors grown by pulsed laser ablation Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 1751-1756. DOI: 10.1116/1.1763902 |
0.421 |
|
| 2004 |
Kim JH, Holloway PH. Textured growth of cubic gallium nitride thin films on Si (100) substrates by sputter deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 1591-1595. DOI: 10.1116/1.1705643 |
0.394 |
|
| 2004 |
Rieth LW, Holloway PH. Influence of negative ion resputtering on ZnO:Al thin films Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 20-29. DOI: 10.1116/1.1626641 |
0.686 |
|
| 2004 |
McDaniel GY, Fenstermaker ST, Lampert WV, Holloway PH. Rhenium ohmic contacts on 6H-SIC Journal of Applied Physics. 96: 5357-5364. DOI: 10.1063/1.1797550 |
0.41 |
|
| 2004 |
Kim JH, Holloway PH. Near-infrared electroluminescence at room temperature from neodymium-doped gallium nitride thin films Applied Physics Letters. 85: 1689-1691. DOI: 10.1063/1.1781745 |
0.46 |
|
| 2004 |
Bang J, Abrams B, Wagner B, Holloway PH. Effects of coatings on temporal cathodoluminescence quenching in ZnS:Ag,Cl phosphors Journal of Applied Physics. 95: 7873-7880. DOI: 10.1063/1.1748861 |
0.791 |
|
| 2004 |
Kim JH, Holloway PH. Room-temperature photoluminescence and electroluminescence properties of sputter-grown gallium nitride doped with europium Journal of Applied Physics. 95: 4787-4790. DOI: 10.1063/1.1652226 |
0.459 |
|
| 2004 |
Kim JH, Holloway PH. Enhancement of cathodoluminescence of ZnGa2O4:Mn thin-film phosphor by energetic particle bombardment Applied Physics Letters. 84: 2070-2072. DOI: 10.1063/1.1650031 |
0.385 |
|
| 2004 |
Bang J, Abrams B, Holloway PH. Erratum: “Quenching of cathodoluminescence from Eu3+-doped La2O2S” [J. Appl. Phys. 94, 7091 (2003)] Journal of Applied Physics. 95: 2195-2195. DOI: 10.1063/1.1645325 |
0.776 |
|
| 2004 |
Kim JH, Holloway PH. Wurtzite to zinc-blende phase transition in gallium nitride thin films Applied Physics Letters. 84: 711-713. DOI: 10.1063/1.1640801 |
0.384 |
|
| 2004 |
Kim JP, Davidson MR, Puga-Lambers M, Lambers E, Holloway PH. Oxygen codoping of ZnS:Tb,F electroluminescent thin film Journal of Luminescence. 109: 75-83. DOI: 10.1016/J.Jlumin.2003.12.054 |
0.346 |
|
| 2004 |
Bang J, Abboudi M, Abrams B, Holloway PH. Combustion synthesis of Eu-, Tb- and Tm- doped Ln2O2S (Ln=Y, La, Gd) phosphors Journal of Luminescence. 106: 177-185. DOI: 10.1016/J.Jlumin.2003.09.005 |
0.629 |
|
| 2004 |
Ihanus J, Lambers E, Holloway PH, Ritala M, Leskelä M. XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique Journal of Crystal Growth. 260: 440-446. DOI: 10.1016/J.Jcrysgro.2003.08.046 |
0.353 |
|
| 2004 |
Yang H, Holloway P. Efficient and Photostable ZnS-Passivated CdS:Mn Luminescent Nanocrystals Advanced Functional Materials. 14: 152-156. DOI: 10.1002/Adfm.200305011 |
0.584 |
|
| 2003 |
Kwon YW, Li Y, Heo YW, Jones M, Vijay, Jeong BS, Zhou J, Li S, Holloway P, Norton DP. Transparent Transistors Based on Semiconducting Oxides Mrs Proceedings. 786. DOI: 10.1557/Proc-786-E6.30 |
0.352 |
|
| 2003 |
Abrams BL, Williams L, Bang J, Holloway PH. Synergistic Temperature and Electron Irradiation Effects on the Degradation of Cathodoluminescent ZnS:Ag,Cl Powder Phosphors Journal of the Electrochemical Society. 150: H105. DOI: 10.1149/1.1560954 |
0.621 |
|
| 2003 |
Holloway PH. Progress in electronic materials characterization Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 21: S167-S174. DOI: 10.1116/1.1599865 |
0.304 |
|
| 2003 |
Kim JH, Davidson MR, Holloway PH. Electroluminescence from Tm-doped GaN deposited by radio-frequency planar magnetron sputtering Applied Physics Letters. 83: 4746-4748. DOI: 10.1063/1.1627471 |
0.444 |
|
| 2003 |
Bang J, Abrams B, Holloway PH. Quenching of cathodoluminescence from Eu3+-doped La2O2S Journal of Applied Physics. 94: 7091-7100. DOI: 10.1063/1.1623613 |
0.784 |
|
| 2003 |
Kim JH, Shepherd N, Davidson MR, Holloway PH. Visible and near-infrared alternating-current electroluminescence from sputter-grown GaN thin films doped with Er Applied Physics Letters. 83: 4279-4281. DOI: 10.1063/1.1622106 |
0.418 |
|
| 2003 |
Kale A, Shepherd N, Glass W, DeVito D, Davidson M, Holloway PH. Infrared emission from zinc sulfide: Rare-earth doped thin films Journal of Applied Physics. 94: 3147-3152. DOI: 10.1063/1.1597956 |
0.813 |
|
| 2003 |
Kim JH, Shepherd N, Davidson M, Holloway PH. Sputter deposited GaN doped erbium thin films: Photoluminescence and 1550 nm infrared electroluminescence Applied Physics Letters. 83: 641-643. DOI: 10.1063/1.1595731 |
0.451 |
|
| 2003 |
Yang H, Holloway PH. Enhanced photoluminescence from CdS:Mn/ZnS core/shell quantum dots Applied Physics Letters. 82: 1965-1967. DOI: 10.1063/1.1563305 |
0.578 |
|
| 2003 |
Yang H, Holloway PH, Ratna BB. Photoluminescent and electroluminescent properties of Mn-doped ZnS nanocrystals Journal of Applied Physics. 93: 586-592. DOI: 10.1063/1.1529316 |
0.627 |
|
| 2003 |
Yang H, Holloway PH. Electroluminescence from Hybrid Conjugated Polymer−CdS:Mn/ZnS Core/Shell Nanocrystals Devices The Journal of Physical Chemistry B. 107: 9705-9710. DOI: 10.1021/Jp034749I |
0.588 |
|
| 2003 |
Yi S, Bae J, Shim K, Jeong J, Park H, Holloway P. Photoluminescence behavior of ZnGa2O4−xSex:Mn2+ thin film phosphors Journal of Crystal Growth. 259: 95-102. DOI: 10.1016/S0022-0248(03)01588-4 |
0.415 |
|
| 2002 |
Liu B, Lambers E, Alexander WB, Holloway PH. Effects of a Ni cap layer on transparent Ni/Au ohmic contacts to p-GaN Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 1394. DOI: 10.1116/1.1490388 |
0.349 |
|
| 2002 |
Kim JH, Holloway PH. Microstructural characterization of radio frequency magnetron sputter-deposited Ga2O3:Mn phosphor thin films Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 20: 928-933. DOI: 10.1116/1.1474418 |
0.374 |
|
| 2002 |
Zhang A, Ren F, Anderson T, Abernathy C, Singh R, Holloway P, Pearton S, Palmer D, McGuire G. High-Power GaN Electronic Devices Critical Reviews in Solid State and Materials Sciences. 27: 1-71. DOI: 10.1080/20014091104206 |
0.354 |
|
| 2002 |
Lewis JS, Davidson MR, Holloway PH. Control of point defects and space charge in electroluminescent ZnS:Mn thin films Journal of Applied Physics. 92: 6646-6657. DOI: 10.1063/1.1516625 |
0.368 |
|
| 2002 |
Zhai Q, Li J, Lewis J, Waldrip K, Jones K, Holloway P, Davidson M, Evans N. Microstructure and electroluminescence of ZnS:Mn doped with KCl Thin Solid Films. 414: 105-112. DOI: 10.1016/S0040-6090(02)00435-2 |
0.415 |
|
| 2001 |
Waldrip KE, Lewis JS, Zhai Q, Puga-Lambers M, Davidson MR, Holloway PH, Sun SS. Improved electroluminescence of ZnS:Mn thin films by codoping with potassium chloride Journal of Applied Physics. 89: 1664-1670. DOI: 10.1063/1.1338988 |
0.38 |
|
| 2001 |
Huang CH, Li SS, Shafarman WN, Chang CH, Lambers ES, Rieth L, Johnson JW, Kim S, Stanbery BJ, Anderson TJ, Holloway PH. Study of Cd-free buffer layers using Inx(OH,S)y on CIGS solar cells Solar Energy Materials and Solar Cells. 69: 131-137. DOI: 10.1016/S0927-0248(00)00386-X |
0.628 |
|
| 2000 |
Cho KG, Singh RK, Chen Z, Kumar D, Holloway PH. Modeling of Interface Scattering Effects during Light Emission from Thin Film Phosphors for Field Emission Displays Mrs Proceedings. 621. DOI: 10.1557/Proc-621-Q2.6.1 |
0.367 |
|
| 2000 |
Cho KG, Singh RK, Kumar D, Holloway PH, Gao H, Pennycook SJ, Russell G, Wagner BK. The Effects of Microstructure on the Brightness of Pulsed Laser Deposited Y2O3:Eu Thin Film Phosphors for Field Emission Displays Mrs Proceedings. 621. DOI: 10.1557/Proc-621-Q2.10.1 |
0.384 |
|
| 2000 |
Park YD, Jung KB, Overberg M, Temple D, Pearton SJ, Holloway PH. Comparative study of Ni nanowires patterned by electron-beam lithography and fabricated by lift-off and dry etching techniques Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 16. DOI: 10.1116/1.591143 |
0.349 |
|
| 2000 |
Kondoleon CA, Rack P, Lambers E, Holloway P. Carbon deposition by electron beam cracking of hydrocarbons on Ta2Zn3O8 thin film phosphors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 18: 2699-2705. DOI: 10.1116/1.1319817 |
0.524 |
|
| 2000 |
Holloway PH, Trottier TA, Sebastian J, Jones S, Zhang X, Bang J, Abrams B, Thomes WJ, Kim T. Degradation of field emission display phosphors Journal of Applied Physics. 88: 483-488. DOI: 10.1063/1.373683 |
0.791 |
|
| 2000 |
Waldrip KE, Lewis JS, Zhai Q, Davidson MR, Holloway PH, Sun SS. Improved brightness, efficiency, and stability of sputter deposited alternating current thin film electroluminescent ZnS:Mn by codoping with potassium chloride Applied Physics Letters. 76: 1276-1278. DOI: 10.1063/1.126007 |
0.405 |
|
| 1999 |
Gao H, Duscher G, Fan X, Pennycook S, Kumar D, Cho K, Holloway P, Singh R. Relationship Between Structure and Luminescent Properties of Epitaxial Grown Y2O3:Eu Thin Films on LaAlO3 Substrates Mrs Proceedings. 589. DOI: 10.1557/Proc-589-203 |
0.394 |
|
| 1999 |
Rack PD, Holloway PH, O'Brien TA, Zerner MC. Semiempirical Self-Consistent Field Modeling of the Ce+3 4f AND 5d Energy Levels in Solid State Luminescent Materials Mrs Proceedings. 579. DOI: 10.1557/Proc-579-221 |
0.561 |
|
| 1999 |
Rieth LW, Holloway PH, Lambers E. Nucleation and Growth of Sputter Deposited Zno:Al Thin Films on Soda-Lime Glass Substrates Mrs Proceedings. 574. DOI: 10.1557/Proc-574-205 |
0.659 |
|
| 1999 |
Zhai Q, Li J, Lewis J, Waldrip K, Jones K, Holloway P, Puga-Lambers M, Davidson M. Effects of Co-Dopants on the Microstrucutre and El Properties of the Zns:Mn Luminescence Materials Mrs Proceedings. 560. DOI: 10.1557/Proc-560-21 |
0.406 |
|
| 1999 |
Cho K, Kumar D, Chen Z, Holloway PH, Singh RK. Modeling of Cathodoluminescence and Photoluminescence Properties of Pulsed Laser-Deposited Europium-Activated Yttrium Oxide thin Film Phosphors Mrs Proceedings. 560. DOI: 10.1557/Proc-558-21 |
0.388 |
|
| 1999 |
Holloway PH, Trottier TA, Abrams B, Kondoleon C, Jones SL, Sebastian JS, Thomes WJ, Swart H. Advances in field emission displays phosphors Journal of Vacuum Science & Technology B. 17: 758-764. DOI: 10.1116/1.590634 |
0.322 |
|
| 1999 |
Seager CH, Tallant DR, Shea L, Zavadil KR, Gnade B, Holloway PH, Bang JS, Zhang XM, Vecht A, Gibbons CS, Trwoga P, Summers C, Wagner B, Penczek J. Influence of vacuum environment on the aging of phosphors at low electron energies Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 17: 3509-3515. DOI: 10.1116/1.582032 |
0.595 |
|
| 1999 |
Darici Y, Holloway PH, Sebastian J, Trottier T, Jones S, Rodriquez J. Electron beam dissociation of CO and CO2 on ZnS thin films Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 17: 692-697. DOI: 10.1116/1.581688 |
0.345 |
|
| 1999 |
Kumar D, Cho KG, Chen Z, Craciun V, Holloway PH, Singh RK. Cathodoluminescent properties of pulsed-laser-deposited Eu-activatedY2O3epitaxial films Physical Review B. 60: 13331-13334. DOI: 10.1103/Physrevb.60.13331 |
0.35 |
|
| 1999 |
Rack PD, O'Brien TA, Zerner MC, Holloway PH. Determination of the Ce+3 bonding in the Ca0.5Sr0.5Ga2S4:Ce phosphor via x-ray photoelectron spectroscopy Journal of Applied Physics. 86: 2377-2384. DOI: 10.1063/1.371063 |
0.541 |
|
| 1999 |
Swart H, Greeff A, Holloway P, Berning G. The difference in degradation behaviour of ZnS:Cu,Al,Au and ZnS:Ag,Cl phosphor powders Applied Surface Science. 140: 63-69. DOI: 10.1016/S0169-4332(98)00356-0 |
0.34 |
|
| 1998 |
Sun S, Nguyen T, Bowen MS, Kane J, Yocom PN, Naman A, Jones K, Holloway PH, Evans DR, Dennis WM. High-luminance SrS:Ce,Ga,F thin-film-electroluminescent devices Journal of the Society For Information Display. 6: 61. DOI: 10.1889/1.1985207 |
0.402 |
|
| 1998 |
Evans DR, Warren GT, Raukas M, Happek U, Dennis WM, Sun S, Basun S, Kane J, Yocom PN, Naman A, Holloway P. PL studies of Ce[sup 3+]- and Pr[sup 3+]-doped SrS thin films Journal of the Society For Information Display. 6: 9. DOI: 10.1889/1.1985197 |
0.383 |
|
| 1998 |
Cho K, Kumar D, Holloway PH, Singh RK. Luminescence Properties of Pulsed Laser Deposited Eu:Y2O3 Thin Film Phosphors on Sapphire Substrates Mrs Proceedings. 526. DOI: 10.1557/Proc-526-317 |
0.389 |
|
| 1998 |
Cho K, Kumar D, Lee D, Holloway P, Singh R. Enhanced Luminescence Properties of Pulsed Laser-Deposited Eu:Y2O3 Thin Film Phosphors Using Diamond Buffer Layer Mrs Proceedings. 508. DOI: 10.1557/Proc-508-301 |
0.385 |
|
| 1998 |
Lee JW, Pathangey B, Davidson MR, Holloway PH, Lambers ES, Davydov B, Anderson TJ, Pearton SJ. Comparison of plasma chemistries for dry etching thin film electroluminescent display materials Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 2177-2186. DOI: 10.1116/1.581326 |
0.324 |
|
| 1998 |
Lee JW, Pathangey B, Davidson MR, Holloway PH, Lambers ES, Davydov A, Anderson TJ, Pearton SJ. Electron cyclotron resonance plasma etching of oxides and SrS and ZnS-based electroluminescent materials for flat panel displays Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 1944-1948. DOI: 10.1116/1.581201 |
0.335 |
|
| 1998 |
Sosa V, Rack PD, Holloway PH. X-ray photoelectron spectroscopy valence band data for ZnS, SrS, and Sr0.45Ca0.55Ga2S4 luminescent thin films Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 393-396. DOI: 10.1116/1.581036 |
0.513 |
|
| 1998 |
Rack PD, Lewis JS, Holloway PH, Park W, Wagner BK, Summers CJ. Bound exciton luminescence in Te-doped SrS Journal of Applied Physics. 84: 3676-3683. DOI: 10.1063/1.368544 |
0.524 |
|
| 1998 |
Cho KG, Kumar D, Holloway PH, Singh RK. Luminescence behavior of pulsed laser deposited Eu:Y2O3 thin film phosphors on sapphire substrates Applied Physics Letters. 73: 3058-3060. DOI: 10.1063/1.122671 |
0.391 |
|
| 1998 |
Rack PD, Holloway PH. The structure, device physics, and material properties of thin film electroluminescent displays Materials Science and Engineering: R: Reports. 21: 171-219. DOI: 10.1016/S0927-796X(97)00010-7 |
0.547 |
|
| 1998 |
Puga-Lambers M, Holloway PH. Characterization of shallow implants with SIMS using electron-beam-assisted oxygen bombardment with oxygen backfill Surface and Interface Analysis. 26: 851-860. DOI: 10.1002/(Sici)1096-9918(199810)26:11<851::Aid-Sia442>3.0.Co;2-M |
0.304 |
|
| 1998 |
Swart HC, Oosthuizen L, Holloway PH, Berning GLP. Degradation behaviour of ZnS phosphor powders under different experimental conditions Surface and Interface Analysis. 26: 337-342. DOI: 10.1002/(Sici)1096-9918(19980501)26:5<337::Aid-Sia376>3.0.Co;2-E |
0.342 |
|
| 1997 |
Jones SL, Kumar D, Singh RK, Holloway PH. Deposition and Characterization of Eu:Y2O3 Red Phosphor Thin Films Mrs Proceedings. 471. DOI: 10.1557/Proc-471-299 |
0.381 |
|
| 1997 |
Li J, Kryliouk OM, Holloway PH, Anderson TJ, Jones KS. Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 468. DOI: 10.1557/Proc-468-167 |
0.401 |
|
| 1997 |
Donovan SM, MacKenzie JD, Abernathy CR, Pearton SJ, Holloway P, Ren F, Zavada JM, Chai B. Substrate Effects on the Growth of InN Mrs Proceedings. 468. DOI: 10.1557/Proc-468-161 |
0.371 |
|
| 1997 |
Sebastian JS, Swart HC, Trottier TA, Jones SL, Holloway PH. Degradation of ZnS field-emission display phosphors during electron-beam bombardment Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 15: 2349-2353. DOI: 10.1116/1.580746 |
0.368 |
|
| 1997 |
McDaniel G, Lee JW, Lambers ES, Pearton SJ, Holloway PH, Ren F, Grow JM, Bhaskaran M, Wilson RG. Comparison of dry etch chemistries for SiC Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 15: 885-889. DOI: 10.1116/1.580726 |
0.324 |
|
| 1997 |
Warren WL, Seager CH, Sun S, Naman A, Holloway PH, Jones KS, Soininen E. Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices Journal of Applied Physics. 82: 5138-5143. DOI: 10.1063/1.366547 |
0.382 |
|
| 1997 |
Cho KG, Kumar D, Lee DG, Jones SL, Holloway PH, Singh RK. Improved luminescence properties of pulsed laser deposited Eu:Y2O3thin films on diamond coated silicon substrates Applied Physics Letters. 71: 3335-3337. DOI: 10.1063/1.120329 |
0.366 |
|
| 1997 |
Jones SL, Kumar D, Singh RK, Holloway PH. Luminescence of pulsed laser deposited Eu doped yttrium oxide films Applied Physics Letters. 71: 404-406. DOI: 10.1063/1.119551 |
0.393 |
|
| 1997 |
Warren WL, Vanheusden K, Rodriguez MA, Seager CH, Tallant DR, Rack PD, Holloway PH, Wagner BK, Summers CJ, Yocom PN. Luminescence, absorption, and site symmetry of Ce activated SrGa2S4 phosphors Applied Physics Letters. 70: 478-480. DOI: 10.1063/1.118186 |
0.555 |
|
| 1997 |
Holloway PH, Kim T-, Trexler JT, Miller S, Fijol JJ, Lampert WV, Haas TW. Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors Applied Surface Science. 362-372. DOI: 10.1016/S0169-4332(97)80109-2 |
0.334 |
|
| 1997 |
Oosthuizen L, Swart H, Viljoen P, Holloway P, Berning G. ZnS:Cu,Al,Au phosphor degradation under electron excitation Applied Surface Science. 120: 9-14. DOI: 10.1016/S0169-4332(97)00246-8 |
0.354 |
|
| 1997 |
Fijol JJ, Holloway PH. Degradation of ZnSe/ZnTe multiquantum well contacts to p-ZnSe Journal of Electronic Materials. 26: 715-722. DOI: 10.1007/S11664-997-0221-6 |
0.311 |
|
| 1997 |
Davidson MR, Pathangey B, Holloway PH, Rack PD, Sun SS, King CN. Sputter deposition of phosphors for electroluminescent flat panel displays Journal of Electronic Materials. 26: 1355-1360. DOI: 10.1007/S11664-997-0084-X |
0.581 |
|
| 1996 |
Trottier TA, Swart HC, Jones SL, Sebastian JS, Holloway PH. A comparison of the degradation mechanisms in ZnS and Y[sub 2]O[sub 2]S:Eu powder FED phosphors Journal of the Society For Information Display. 4: 351. DOI: 10.1889/1.4731191 |
0.346 |
|
| 1996 |
Rack PD, Holloway PH, Sun S. Variations in the Ce radiative transition by oxygen doping in Ca[sub 0.55]Sr[sub 0.45]Ga[sub 2]S[sub 4]:Ce blue electroluminescent phosphor Journal of the Society For Information Display. 4: 281. DOI: 10.1889/1.4731178 |
0.565 |
|
| 1996 |
Rack P, Naman A, Holloway P, Sun S, Tuenge R. Materials Used in Electroluminescent Displays Mrs Bulletin. 21: 49-58. DOI: 10.1557/S0883769400036137 |
0.548 |
|
| 1996 |
Trexler JT, Pearton SJ, Holloway PH, Mier MG, Evans KR, Karlicek RF. Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaN Mrs Proceedings. 449. DOI: 10.1557/Proc-449-1091 |
0.356 |
|
| 1996 |
Gorrell J, Holloway P, Jerman H. The Influence of Strengthening Mechanisms on Stress Relaxation in Thin Aluminum Metallization Mrs Proceedings. 436. DOI: 10.1557/Proc-436-27 |
0.329 |
|
| 1996 |
Holloway PH, Sebastian J, Trottier T, Jones S, Swart H, Petersen RO. Degradation Mechanisms and Vacuum Requirements for Fed Phosphors Mrs Proceedings. 424. DOI: 10.1557/Proc-424-425 |
0.304 |
|
| 1996 |
Swart HC, Sebastian JS, Trottier TA, Jones SL, Holloway PH. Degradation of zinc sulfide phosphors under electron bombardment Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 14: 1697-1703. DOI: 10.1116/1.580322 |
0.338 |
|
| 1996 |
Viljoen PE, Roos WD, Swart HC, Holloway PH. Carbon Auger peak shape measurements in the characterization of reactions on (001) diamond Applied Surface Science. 100: 612-616. DOI: 10.1016/0169-4332(96)00349-2 |
0.309 |
|
| 1996 |
Trexler J, Fijol J, Calhoun L, Park R, Holloway P. Electrical contacts to p-ZnTe Journal of Crystal Growth. 159: 723-726. DOI: 10.1016/0022-0248(95)00878-0 |
0.337 |
|
| 1996 |
Miller S, Holloway PH. Ohmic contacts to n-type GaN Journal of Electronic Materials. 25: 1709-1714. DOI: 10.1007/S11664-996-0026-Z |
0.335 |
|
| 1996 |
Trexler JT, Fijol JJ, Calhoun LC, Park RM, Holloway PH. Formation of ohmic contacts to p-ZnTe Journal of Electronic Materials. 25: 1474-1477. DOI: 10.1007/Bf02655386 |
0.374 |
|
| 1995 |
Sebastian J, Jones S, Trottier T, Swart H, Holloway P. Electron-stimulated surface reactions between residual vacuum gas and ZnS field-emission-display phosphors Journal of the Society For Information Display. 3: 147. DOI: 10.1889/1.1984956 |
0.346 |
|
| 1995 |
Alexander WB, Holloway PH, Doering P, Linares R. Characterization of Stress and Mosaicity in Homoepitaxial Diamond Films Mrs Proceedings. 416. DOI: 10.1557/Proc-416-57 |
0.364 |
|
| 1995 |
Duibha A, Pearton SJ, Abernathy CR, Lee JW, Holloway PH, Ren F. Thermal Stability of Ohmic Contacts to n-InxGa1−xN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-825 |
0.351 |
|
| 1995 |
Trexler J, Miller S, Holloway P, Khan M. Interfacial Reactions Between Metal Thin Films and p-GaN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-819 |
0.366 |
|
| 1995 |
Mueller C, Holloway P, Budai J, Miranda F, Bhasin K. YBa2Cu3O7−x films on off-axis Y-ZrO2 substrates using Y-ZrO2 or Y2O3 barrier layers Journal of Materials Research. 10: 810-816. DOI: 10.1557/Jmr.1995.0810 |
0.354 |
|
| 1995 |
Lin XW, Lampert WV, Haas TW, Holloway PH, Liliental-Weber Z, Swider W, Washburn J. Metallurgy of Al-Ni-Ge ohmic contact formation on n-GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 2081-2091. DOI: 10.1116/1.588081 |
0.332 |
|
| 1995 |
Ristolainen E, Puga-Lambers M, Panthangay B, Holloway P. Depth profiling of thin film heterostructure materials by secondary ion mass spectrometry Vacuum. 46: 1025-1029. DOI: 10.1016/0042-207X(95)00098-4 |
0.335 |
|
| 1995 |
Fijol JJ, Calhoun LC, Park RM, Holloway PH. Au and Ag electrical contacts to p-ZnSe Journal of Electronic Materials. 24: 143-150. DOI: 10.1007/Bf02659887 |
0.344 |
|
| 1994 |
Holloway PH, Yu J, Rack P, Sebastian J, Jones S, Trottier T, Jones KS, Pathangey B, Anderson T, Sun S, Tuenge R, Dickey E, King C. Blue And Yellow Light Emitting Phosphors For Thin Film Electroluminescent Displays Mrs Proceedings. 345. DOI: 10.1557/Proc-345-289 |
0.426 |
|
| 1994 |
Fischer V, Viljoen P, Ristolainen E, Holloway P, Lampert W, Haas T, Woodall J. The Effects of Interfacial Reactions in the Formation of Ohmic Contacts to GaAs Mrs Proceedings. 337. DOI: 10.1557/Proc-337-413 |
0.353 |
|
| 1994 |
Fischer V, Ristolainen E, Holloway PH, Lampert WV, Haas TW. Sulfur passivation of AlxGa1−xAs for ohmic contact formation Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 12: 1103-1107. DOI: 10.1116/1.579172 |
0.34 |
|
| 1994 |
Mueller C, Holloway P, Miranda F, Bhasin K. Effect of oxygen pressure on the orientation of films deposited on (102) Al2O3 substrates Thin Solid Films. 238: 123-126. DOI: 10.1016/0040-6090(94)90661-0 |
0.356 |
|
| 1994 |
Lin XW, Lampert WV, Swider W, Haas TW, Holloway PH, Washburn J, Liliental-Weber Z. Morphology of AlNiGe ohmic contacts to n-GaAs as a function of contact composition Thin Solid Films. 253: 490-495. DOI: 10.1016/0040-6090(94)90372-7 |
0.362 |
|
| 1994 |
Yu JE, Jones KS, Holloway PH, Pathangey B, Bretschneider E, Anderson TJ, Sun SS, King CN. Temperature and flow modulation doping of manganese in ZnS electroluminescent films by low pressure metalorganic chemical vapor deposition Journal of Electronic Materials. 23: 299-305. DOI: 10.1007/Bf02670639 |
0.431 |
|
| 1994 |
Contarini S, Giunta G, Loreti S, Nistico N, Lambers E, Holloway PH. Interface analysis of ceramic matrix composites by XPS, AES, SEM and XRD Surface and Interface Analysis. 22: 258-262. DOI: 10.1002/Sia.740220156 |
0.318 |
|
| 1993 |
Lampert WV, Haas TW, Holloway PH. The EFfects of Elemental Sequence and Pairing on Interdiffusion and Phase Formation of Al-Ge-Ni Ohmic Contacts for (001) GaAs Mrs Proceedings. 300. DOI: 10.1557/Proc-300-261 |
0.317 |
|
| 1993 |
Fang J, Holloway PH, Yu JE, Jones KS, Pathangey B, Brettschneider E, Anderson TJ. MOCVD growth of non-epitaxial and epitaxial ZnS thin films Applied Surface Science. 701-706. DOI: 10.1016/0169-4332(93)90605-B |
0.407 |
|
| 1992 |
Lampert WV, Haas TW, Lambers ES, Holloway PH. The Effects of Growth Sequence on the Electronic Properties of Al-Ge-Ni Ohmic Contacts on (001) GaAs Mrs Proceedings. 281. DOI: 10.1557/Proc-281-695 |
0.32 |
|
| 1992 |
Lampert WV, Haas TW, Holloway PH. The Kinetic Effects of Layering Sequence of Al-Ge-Ni Ohmic Contact Components on (001) GaAs Mrs Proceedings. 260. DOI: 10.1557/Proc-260-941 |
0.317 |
|
| 1992 |
Singh RK, Gilbert D, Tellshow R, Koba R, Ochoa R, Simmons JH, Holloway PH, Rodgers J, Buckle K. Remote Ecr Plasma Deposition of Diamond Thin Films from Water-Methanol Mixtures Mrs Proceedings. 242. DOI: 10.1557/Proc-242-31 |
0.38 |
|
| 1992 |
Yu JE, Jones KS, Fang J, Holloway PH, Pathangey B, Bretschneider E, Anderson TJ. Characterization of ZnS Layers Grown by MOCVD for Thin Film Electroluminescence (TFEL) Devices Mrs Proceedings. 242. DOI: 10.1557/Proc-242-215 |
0.409 |
|
| 1992 |
Wang Y, Darici Y, Holloway PH. Surface passivation of GaAs with P2S5‐containing solutions Journal of Applied Physics. 71: 2746-2756. DOI: 10.1063/1.351048 |
0.324 |
|
| 1992 |
Li B, Holloway PH. Regrowth of a GaAs layer forn‐GaAs ohmic contacts Journal of Applied Physics. 71: 4385-4389. DOI: 10.1063/1.350776 |
0.367 |
|
| 1992 |
Singh RK, Gilbert D, Tellshow R, Holloway PH, Ochoa R, Simmons JH, Koba R. Low-pressure, low-temperature, and remote-plasma deposition of diamond thin films from water-methanol mixtures Applied Physics Letters. 61: 2863-2865. DOI: 10.1063/1.108058 |
0.374 |
|
| 1992 |
Alexander WB, Holloway PH, Heatherly L, Clausing RE. Crystallite geometry of hot filament chemical vapor deposited diamond Surface & Coatings Technology. 387-391. DOI: 10.1016/S0257-8972(07)80053-3 |
0.339 |
|
| 1992 |
Contarini S, Lambers E, Holloway P. Correlated scanning Auger and X-ray photoelectron spectroscopic investigations of silicon carbide powders Applied Surface Science. 62: 181-188. DOI: 10.1016/0169-4332(92)90144-M |
0.309 |
|
| 1992 |
Wang Y, Holloway PH. Indium ohmic contacts to n-ZnSe Vacuum. 43: 1149-1151. DOI: 10.1016/0042-207X(92)90355-Z |
0.348 |
|
| 1992 |
Holloway PH, Mueller CH. Chemical reactions at metal/compound semiconductor interfaces: Au and GaAs Thin Solid Films. 221: 254-261. DOI: 10.1016/0040-6090(92)90823-T |
0.335 |
|
| 1991 |
Deneuville A, Tanner DB, Park RM, Holloway PH. Determination of the carrier concentration of doped ZnSe from infrared measurements Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 9: 949-953. DOI: 10.1116/1.577554 |
0.313 |
|
| 1991 |
Li B, Holloway PH. Regrowth of GaAs at the Au–Ge–Ga/GaAs interface under an As flux Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 9: 944-948. DOI: 10.1116/1.577553 |
0.411 |
|
| 1991 |
Holloway PH, Yeh LLM, Powell DH, Brown A. Mechanism of forming ohmic contacts to GaAs Applied Physics Letters. 59: 947-949. DOI: 10.1063/1.106310 |
0.326 |
|
| 1991 |
Deneuville A, Tanner D, Park R, Holloway P. Semiconductor electrical properties from the frequency dependence of the dielectric constant: application to n-type ZnSe heteroepitaxial thin films Applied Surface Science. 50: 285-289. DOI: 10.1016/0169-4332(91)90183-K |
0.31 |
|
| 1991 |
Schrag G, Colgate S, Holloway P. Deposition of MoSi2 thin films by laser ablation from free-falling particles Thin Solid Films. 199: 231-240. DOI: 10.1016/0040-6090(91)90005-I |
0.334 |
|
| 1990 |
Deneuville A, Ayyub P, Park CH, Anderson T, Lowen P, Jones K, Holloway PH. Raman Studies of Znse Lattice Damage and Recovery Due to N Implantation and Annealing Mrs Proceedings. 209. DOI: 10.1557/Proc-209-457 |
0.33 |
|
| 1990 |
Wang YX, Cui YD, Chen ZG, Lambers E, Holloway PH. Auger crater‐edge profiling of multilayer thin films by scanning Auger spectroscopy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 8: 2241-2245. DOI: 10.1116/1.576743 |
0.355 |
|
| 1990 |
Deneuville A, Lindauer G, Tanner DB, Park RM, Holloway PH. Infrared absorption inn‐type ZnSe/GaAs heteroepitaxial films Applied Physics Letters. 57: 2458-2460. DOI: 10.1063/1.103850 |
0.358 |
|
| 1990 |
Jeng S, Holloway PH. Preferential sputtering of Ni/Cr(110) Surface Science. 227: 273-277. DOI: 10.1016/S0039-6028(05)80015-9 |
0.306 |
|
| 1989 |
Leskelä M, Truman JK, Mueller CH, Holloway PH. Preparation of superconducting Y–Ba–Cu–O thin films Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 3147-3171. DOI: 10.1116/1.576329 |
0.371 |
|
| 1989 |
Yeh LL, Xie Y, Holloway PH. The effect of sputter cleaning on Au/GaAs contacts and the role of doping Journal of Applied Physics. 65: 3568-3573. DOI: 10.1063/1.342632 |
0.371 |
|
| 1988 |
Kurinec S, Toor I, Chao Y, Shillingford H, Holloway P, Ray S, Beckham K. Effects of heat treating Au/Ni thin film composites in various ambients Thin Solid Films. 162: 247-255. DOI: 10.1016/0040-6090(88)90212-X |
0.409 |
|
| 1988 |
Remond G, Holloway PH, Caye R, Ruzakowski P. Application of reflectance studies to layered samples: SiOx on InSb Surface and Interface Analysis. 11: 134-143. DOI: 10.1002/Sia.740110303 |
0.34 |
|
| 1988 |
Packwood RH, Remond G, Holloway PH. X-ray spectrometry and photoelectron spectroscopy applied to the study of layered samples: SiO2 and SiOx films on InSb Surface and Interface Analysis. 11: 127-133. DOI: 10.1002/Sia.740110302 |
0.333 |
|
| 1987 |
Remond G, Caye R, Holloway PH, Ruzakowski P. Optical characterization of SiO1.1 silicon oxide layers on InSb Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 5: 1115-1119. DOI: 10.1116/1.574812 |
0.362 |
|
| 1987 |
Chao YK, Kurinec SK, Toor I, Shillingford S, Holloway PH. Porosity in thin Ni/Au metallization layers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 337-342. DOI: 10.1116/1.574156 |
0.38 |
|
| 1986 |
Holloway PH. Progress in instrumentation, data reduction, and depth profiles in Auger electron spectroscopy Applied Surface Science. 26: 550-560. DOI: 10.1016/0169-4332(86)90126-1 |
0.304 |
|
| 1985 |
Ruzakowski P, Holloway PH, Remond G. Spatially resolved surface analysis using optical microreflectometry Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 3: 1380-1385. DOI: 10.1116/1.572783 |
0.321 |
|
| 1985 |
Shanker K, Holloway PH. Electrodeposition of black chrome selective solar absorber coatings with improved thermal stability Thin Solid Films. 127: 181-189. DOI: 10.1016/0040-6090(85)90189-0 |
0.351 |
|
| 1984 |
Buonaquisti AD, Matson RJ, Russell PE, Holloway PH. Magnetron sputtered gold contacts onn-GaAs Surface and Interface Analysis. 6: 279-281. DOI: 10.1002/Sia.740060606 |
0.634 |
|
| 1983 |
Sun S, Holloway PH. Modification of vapor‐deposited WO3 electrochromic films by oxygen backfilling Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 1: 529-533. DOI: 10.1116/1.571924 |
0.359 |
|
| 1983 |
Hoflund GB, Cox DF, Ohuchi F, Holloway PH, Laitinen HA. An ESD and SIMS study of the composition of platinized, antimony-doped tin oxide films. I Applications of Surface Science. 14: 281-296. DOI: 10.1016/0378-5963(83)90043-0 |
0.383 |
|
| 1983 |
Shanker K, Holloway P. Atmospheric oxidation of chromium between 270 and 490°C Thin Solid Films. 105: 293-303. DOI: 10.1016/0040-6090(83)90312-7 |
0.317 |
|
| 1982 |
Holloway PH, Bhattacharya RS. Preferential sputtering of PtSi, NiSi2, and AgAu Journal of Vacuum Science and Technology. 20: 444-448. DOI: 10.1116/1.571330 |
0.304 |
|
| 1982 |
Holloway PH, Hofmeister SK. Correction factors and sputtering effects in quantitative auger electron spectroscopy Surface and Interface Analysis. 4: 181-184. DOI: 10.1002/Sia.740040502 |
0.337 |
|
| 1981 |
Russell P, Herrington C, Burke D, Holloway P. The Effect of Heat Treatment on Grain Boundary Properties in Cast Polycrystalline Silicon Mrs Proceedings. 5. DOI: 10.1557/Proc-5-185 |
0.58 |
|
| 1981 |
Haranahalli AR, Holloway PH. The influence of metal overlayers on electrochromic behavior of Wo3 films Journal of Electronic Materials. 10: 141-172. DOI: 10.1007/Bf02654906 |
0.348 |
|
| 1980 |
Holloway PH, Shanker K, Pettit RB, Sowell RR. OXIDATION OF ELECTRODEPOSITED BLACK CHROME SELECTIVE SOLAR ABSORBER FILMS Thin Solid Films. 72: 121-128. DOI: 10.1016/0040-6090(80)90565-9 |
0.357 |
|
| 1980 |
Ohuchi F, Ogino M, Holloway PH, Pantano CG. Electron beam effects during analysis of glass thin films with auger electron spectroscopy Surface and Interface Analysis. 2: 85-90. DOI: 10.1002/Sia.740020303 |
0.362 |
|
| 1979 |
Holloway PH. Gold/chromium metallizations for electronic devices Gold Bulletin. 12: 99-106. DOI: 10.1007/Bf03215108 |
0.312 |
|
| 1974 |
Holloway P, Hudson J. Kinetics of the reaction of oxygen with clean nickel single crystal surfaces Surface Science. 43: 123-140. DOI: 10.1016/0039-6028(74)90223-4 |
0.571 |
|
| 1972 |
Holloway P, Hudson J. The kinetics of the reaction between oxygen and sulfur on a Ni(111) surface Surface Science. 33: 56-68. DOI: 10.1016/0039-6028(72)90098-2 |
0.563 |
|
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