| Year |
Citation |
Score |
| 2023 |
Montero-Arevalo B, Seufert BI, Hossain MS, Bernardin E, Takshi A, Saddow SE, Schettini N. SiC Electrochemical Sensor Validation for Alzheimer Aβ Antigen Detection. Micromachines. 14. PMID 37374847 DOI: 10.3390/mi14061262 |
0.751 |
|
| 2021 |
Feng C, Frewin CL, Tanjil MR, Everly R, Bieber J, Kumar A, Wang MC, Saddow SE. A Flexible -SiC-Based Neural Interface Utilizing Pyrolyzed-Photoresist Film (C) Active Sites. Micromachines. 12. PMID 34357231 DOI: 10.3390/mi12070821 |
0.778 |
|
| 2021 |
Beygi M, Dominguez-Viqueira W, Feng C, Mumcu G, Frewin CL, La Via F, Saddow SE. Silicon Carbide and MRI: Towards Developing a MRI Safe Neural Interface. Micromachines. 12. PMID 33530350 DOI: 10.3390/mi12020126 |
0.771 |
|
| 2020 |
Koh D, Banerjee SK, Locke C, Saddow SE, Brockman J, Kuhn M, King SW. Erratum: “Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides” [J. Vac. Sci. Technol. B 37, 041206 (2019)] Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 37001. DOI: 10.1116/6.0000202 |
0.303 |
|
| 2020 |
Murooka T, Hatano M, Yaita J, Makino T, Ogura M, Kato H, Yamasaki S, Natal M, Saddow SE, Iwasaki T. Characterization of Schottky Barrier Diodes on Heteroepitaxial Diamond on 3C-SiC/Si Substrates Ieee Transactions On Electron Devices. 67: 212-216. DOI: 10.1109/Ted.2019.2952910 |
0.469 |
|
| 2019 |
Beygi M, Bentley JT, Frewin CL, Kuliasha CA, Takshi A, Bernardin EK, La Via F, Saddow SE. Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide. Micromachines. 10. PMID 31261887 DOI: 10.3390/Mi10070430 |
0.731 |
|
| 2019 |
Bange R, Bano E, Rapenne L, Mantoux A, Saddow SE, Stambouli V. Development of SOI FETs Based on Core-Shell Si/SiC Nanowires for Sensing in Liquid Environments Materials Science Forum. 963: 701-706. DOI: 10.4028/Www.Scientific.Net/Msf.963.701 |
0.393 |
|
| 2019 |
Koh D, Banerjee SK, Locke C, Saddow SE, Brockman J, Kuhn M, King SW. Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 41206. DOI: 10.1116/1.5111049 |
0.416 |
|
| 2018 |
Bernardin EK, Frewin CL, Everly R, Ul Hassan J, Saddow SE. Correction: Bernardin E.K.; et al. Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface. Micromachines, 2018, 9, 412. Micromachines. 9. PMID 30424384 DOI: 10.3390/Mi9090451 |
0.655 |
|
| 2018 |
Bernardin EK, Frewin CL, Everly R, Ul Hassan J, Saddow SE. Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface. Micromachines. 9. PMID 30424345 DOI: 10.3390/Mi9080412 |
0.695 |
|
| 2018 |
Yaita J, Suto T, Natal M, Saddow SE, Hatano M, Iwasaki T. In situ bias current monitoring of nucleation for epitaxial diamonds on 3C-SiC/Si substrates Diamond and Related Materials. 88: 158-162. DOI: 10.1016/J.Diamond.2018.07.011 |
0.493 |
|
| 2017 |
Yaita J, Natal M, Saddow SE, Hatano M, Iwasaki T. Influence of high-power density plasma on heteroepitaxial diamond nucleation on 3C-SiC surface Applied Physics Express. 10: 45502. DOI: 10.7567/Apex.10.045502 |
0.464 |
|
| 2016 |
Saddow SE, Frewin CL, Cespedes FA, Gazziro M, Bernardin E, Thomas S. SiC for biomedical applications Materials Science Forum. 858: 1010-1014. DOI: 10.4028/Www.Scientific.Net/Msf.858.1010 |
0.701 |
|
| 2016 |
Bernardin E, Frewin CL, Dey A, Everly R, Ul Hassan J, Janzén E, Pancrazio J, Saddow SE. Development of an all-SiC neuronal interface device Mrs Advances. 1: 3679-3684. DOI: 10.1557/Adv.2016.360 |
0.73 |
|
| 2016 |
Frewin CL, Nezafati M, Noble K, Saddow SE. Cytotoxicity of 3C-SiC Investigated Through Strict Adherence to ISO 10993 Silicon Carbide Biotechnology: a Biocompatible Semiconductor For Advanced Biomedical Devices and Applications: Second Edition. 27-61. DOI: 10.1016/B978-0-12-802993-0.00002-2 |
0.691 |
|
| 2015 |
Ahmed M, Khawaja M, Notarianni M, Wang B, Goding D, Gupta B, Boeckl JJ, Takshi A, Motta N, Saddow SE, Iacopi F. A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors. Nanotechnology. 26: 434005. PMID 26447742 DOI: 10.1088/0957-4484/26/43/434005 |
0.427 |
|
| 2015 |
Yaita J, Iwasaki T, Natal M, Saddow SE, Hatano M. Heteroepitaxial growth of diamond films on 3C-SiC/Si substrates with utilization of antenna-edge microwave plasma CVD for nucleation Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.04Dh13 |
0.454 |
|
| 2014 |
Charkhkar H, Frewin C, Nezafati M, Knaack GL, Peixoto N, Saddow SE, Pancrazio JJ. Use of cortical neuronal networks for in vitro material biocompatibility testing. Biosensors & Bioelectronics. 53: 316-23. PMID 24176966 DOI: 10.1016/J.Bios.2013.10.002 |
0.736 |
|
| 2014 |
Register J, Saddow SE, Boulais K. Photosensitive Capacitance Effect In High-purity Semi-insulating 4H-SiC Mrs Proceedings. 1693. DOI: 10.1557/Opl.2014.603 |
0.324 |
|
| 2014 |
Frewin CL, Reyes M, Register J, Thomas SW, Saddow SE. 3C-SiC on Si: A versatile material for electronic, biomedical and clean energy applications Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.567 |
0.742 |
|
| 2013 |
Schoell SJ, Sachsenhauser M, Oliveros A, Howgate J, Stutzmann M, Brandt MS, Frewin CL, Saddow SE, Sharp ID. Organic functionalization of 3C-SiC surfaces. Acs Applied Materials & Interfaces. 5: 1393-9. PMID 23357505 DOI: 10.1021/Am302786N |
0.696 |
|
| 2013 |
Oliveros A, Guiseppi-Elie A, Saddow SE. Silicon carbide: A versatile material for biosensor applications Biomedical Microdevices. 15: 353-368. PMID 23319268 DOI: 10.1007/S10544-013-9742-3 |
0.394 |
|
| 2013 |
Saddow SE, Koshka Y, Via FL, Sanchez E, Tsuchida H, Zhao F. Introduction to Silicon Carbide — Materials, Processing and Devices – ADDENDUM Journal of Materials Research. 28: 786-786. DOI: 10.1557/Jmr.2013.18 |
0.355 |
|
| 2013 |
Oliveros A, Frewin CL, Schoell SJ, Hoeb M, Stutzmann M, Sharp ID, Saddow SE. Assessment of cell proliferation on 6H-SiC biofunctionalized with self-assembled monolayers Journal of Materials Research. 28: 78-86. DOI: 10.1557/Jmr.2012.233 |
0.681 |
|
| 2013 |
Anzalone R, Camarda M, Locke C, Carballo J, Piluso N, La Magna A, Volinsky AA, Saddow SE, La Via F. Stress nature investigation on heteroepitaxial 3C-SiC film on (100) Si substrates Journal of Materials Research. 28: 129-135. DOI: 10.1557/Jmr.2012.224 |
0.672 |
|
| 2012 |
Anzalone R, Camarda M, Locke C, Carballo J, Piluso N, D'Arrigo G, Severino A, Volinsky AA, Saddow SE, La Via F. Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates Materials Science Forum. 717: 521-524. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.521 |
0.683 |
|
| 2012 |
Afroz S, Thomas SW, Mumcu G, Locke CW, Saddow SE. A biocompatible SiC RF antenna for in-vivo sensing applications Materials Research Society Symposium Proceedings. 1433: 119-124. DOI: 10.1557/Opl.2012.1150 |
0.638 |
|
| 2012 |
Register J, Muller A, King J, Weeber E, Frewin CL, Saddow SE. Silicon carbide waveguides for optogenetic neural stimulation Materials Research Society Symposium Proceedings. 1433: 7-12. DOI: 10.1557/Opl.2012.1033 |
0.67 |
|
| 2012 |
La Via F, D’Arrigo G, Severino A, Piluso N, Mauceri M, Locke C, Saddow SE. Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate Journal of Materials Research. 28: 94-103. DOI: 10.1557/Jmr.2012.268 |
0.672 |
|
| 2012 |
Coletti C, Jaroszeski MJ, Hoff AM, Saddow SE. SiC In Vitro Biocompatibility. Epidermal and Connective Tissue Cells Silicon Carbide Biotechnology. 119-152. DOI: 10.1016/B978-0-12-385906-8.00004-0 |
0.568 |
|
| 2011 |
Frewin CL, Locke C, Saddow SE, Weeber EJ. Single-crystal cubic silicon carbide: an in vivo biocompatible semiconductor for brain machine interface devices. Conference Proceedings : ... Annual International Conference of the Ieee Engineering in Medicine and Biology Society. Ieee Engineering in Medicine and Biology Society. Annual Conference. 2011: 2957-60. PMID 22254961 DOI: 10.1109/IEMBS.2011.6090582 |
0.795 |
|
| 2011 |
Oliveros A, Coletti C, Frewin CL, Locke C, Starke U, Saddow SE. Cellular interactions on epitaxial graphene on SiC (0001) substrates Materials Science Forum. 679: 831-834. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.831 |
0.782 |
|
| 2011 |
Saddow SE, Frewin CL, Coletti C, Schettini N, Weeber E, Oliveros A, Jarosezski M. Single-crystal silicon carbide: A biocompatible and hemocompatible semiconductor for advanced biomedical applications Materials Science Forum. 679: 824-830. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.824 |
0.814 |
|
| 2011 |
Anzalone R, Camarda M, D'Arrigo G, Locke C, Canino A, Piluso N, Severino A, Magna AL, Saddow SE, Via FL. Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application Materials Science Forum. 133-136. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.133 |
0.651 |
|
| 2011 |
Anzalone R, D'Arrigo G, Camarda M, Locke C, Saddow SE, Via FL. Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C–SiC for MEMS Application Ieee\/Asme Journal of Microelectromechanical Systems. 20: 745-752. DOI: 10.1109/Jmems.2011.2127451 |
0.625 |
|
| 2011 |
Zhang F, Perng YC, Choi JH, Wu T, Chung TK, Carman GP, Locke C, Thomas S, Saddow SE, Chang JP. Atomic layer deposition of Pb(Zr,Ti)Ox on 4H-SiC for metal-ferroelectric-insulator-semiconductor diodes Journal of Applied Physics. 109. DOI: 10.1063/1.3596574 |
0.647 |
|
| 2010 |
Anzalone R, Camarda M, Alquier D, Italia M, Severino A, Piluso N, Magna AL, Foti G, Locke C, Saddow SE, Roncaglia A, Mancarella F, Poggi A, D'Arrigo G, Via FL. Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers. Materials Science Forum. 865-868. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.865 |
0.678 |
|
| 2010 |
Anzalone R, Locke C, Carballo J, Piluso N, Severino A, D'Arrigo G, Volinsky AA, La Via F, Saddow SE. Growth rate effect on 3C-SiC film residual stress on (100) Si substrates Materials Science Forum. 645: 143-146. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.143 |
0.673 |
|
| 2010 |
Saddow SE, Coletti C, Frewin C, Schettini NC, Oliveros A, Jaroszeski M. Single-crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications Mrs Proceedings. 1246. DOI: 10.1557/Proc-1246-B08-08 |
0.799 |
|
| 2010 |
Locke C, Frewin C, Abbati L, Saddow SE. Demonstration of 3C-SiC MEMS Structures on Polysilicon-on-oxide Substrates Mrs Proceedings. 1246. DOI: 10.1557/Proc-1246-B08-05 |
0.802 |
|
| 2010 |
Frewin CL, Oliveros A, Locke C, Filonova I, Rogers J, Weeber E, Saddow SE. The development of silicon carbide based electrode devices for central nervous system biomedical implants Materials Research Society Symposium Proceedings. 1236: 78-83. DOI: 10.1557/Proc-1236-Ss01-02 |
0.777 |
|
| 2010 |
Anzalone R, Camarda M, Locke C, Alquier D, Severino A, Italia M, Rodilosso D, Tringali C, La Magna A, Foti G, Saddow SE, La Via F, D’Arrigo G. Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis Journal of the Electrochemical Society. 157: H438. DOI: 10.1149/1.3298872 |
0.693 |
|
| 2009 |
Frewin CL, Jaroszeski M, Weeber E, Muffly KE, Kumar A, Peters M, Oliveros A, Saddow SE. Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates Journal of Molecular Recognition. 22: 380-388. PMID 19585542 DOI: 10.1002/Jmr.966 |
0.753 |
|
| 2009 |
Locke C, Kravchenko G, Waters P, Reddy JD, Du K, Volinsky AA, Frewin CL, Saddow SE. 3C-SiC films on Si for MEMS applications: Mechanical properties Materials Science Forum. 615: 633-636. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.633 |
0.809 |
|
| 2009 |
Anzalone R, Locke C, Severino A, Rodilosso D, Tringali C, Foti G, Saddow SE, Via FL, D'Arrigo G. Residual Stress Measurement on Hetero-epitaxial 3C-SiC Films Materials Science Forum. 629-632. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.629 |
0.711 |
|
| 2009 |
Frewin CL, Coletti C, Riedl C, Starke U, Saddow SE. A comprehensive study of hydrogen etching on the major SiC polytypes and crystal orientations Materials Science Forum. 615: 589-592. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.589 |
0.789 |
|
| 2009 |
Picard YN, Locke C, Frewin CL, Twigg ME, Saddow SE. Crystalline quality and surface morphology of 3C-SiC films on Si evaluated by electron channeling contrast imaging Materials Science Forum. 615: 435-438. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.435 |
0.789 |
|
| 2009 |
Locke C, Frewin CL, Wang J, Saddow SE. Growth of single crystal 3C-SiC(111) on a poly-Si seed layer Materials Science Forum. 615: 157-160. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.157 |
0.807 |
|
| 2009 |
Locke C, Anzalone R, Severino A, Bongiorno C, Litrico G, Via FL, Saddow SE. High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111) Materials Science Forum. 145-148. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.145 |
0.686 |
|
| 2009 |
Oliveros A, Schoell SJ, Frewin C, Hoeb M, Stutzmann M, Sharp ID, Saddow SE. Biocompatibility Assessment of SiC Surfaces After Functionalization with Self Assembled Organic Monolayers Mrs Proceedings. 1235. DOI: 10.1557/Proc-1235-Rr03-43 |
0.674 |
|
| 2009 |
Gomez H, Frewin CL, Kumar A, Saddow S, Locke C. Study of the Adhesion and Biocompatibility of Nanocrystalline Diamond (NCD) Films on 3C-SiC Substrates Mrs Proceedings. 1203. DOI: 10.1557/Proc-1203-J08-05 |
0.805 |
|
| 2009 |
Anzalone R, Severino A, D’Arrigo G, Bongiorno C, Abbondanza G, Foti G, Saddow S, Via FL. Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates Journal of Applied Physics. 105: 84910. DOI: 10.1063/1.3095462 |
0.502 |
|
| 2009 |
Frewin CL, Locke C, Wang J, Spagnol P, Saddow SE. Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications Journal of Crystal Growth. 311: 4179-4182. DOI: 10.1016/J.Jcrysgro.2009.06.037 |
0.81 |
|
| 2009 |
Severino A, Frewin C, Bongiorno C, Anzalone R, Saddow SE, Via FL. Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins Diamond and Related Materials. 18: 1440-1449. DOI: 10.1016/J.Diamond.2009.09.012 |
0.723 |
|
| 2008 |
Severino A, Frewin CL, Anzalone R, Bongiorno C, Fiorenza P, D'Arrigo G, Giannazzo F, Foti G, Via FL, Saddow SE. Growth of 3C-SiC on Si: Influence of Process Pressure Materials Science Forum. 211-214. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.211 |
0.744 |
|
| 2008 |
Anzalone R, Severino A, Locke C, Rodilosso D, Tringali C, Saddow SE, La Via F, D'Arrigo G. 3C-SiC Hetero-Epitaxial Films for Sensors Fabrication Advances in Science and Technology. 54: 411-415. DOI: 10.4028/Www.Scientific.Net/Ast.54.411 |
0.686 |
|
| 2008 |
Volinsky AA, Kravchenko G, Waters P, Reddy JD, Locke C, Frewin C, Saddow SE. Residual stress in CVD-grown 3C-SiC films on Si substrates Materials Research Society Symposium Proceedings. 1069: 109-114. DOI: 10.1557/Proc-1069-D03-05 |
0.741 |
|
| 2008 |
Picard YN, Locke C, Frewin CL, Myers-Ward RL, Caldwell JD, Hobart KD, Twigg ME, Saddow SE. Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C07-08 |
0.801 |
|
| 2008 |
Reddy JD, Volinsky AA, Frewin CL, Locke C, Saddow SE. Mechanical properties of 3C-SiC films for MEMS applications Materials Research Society Symposium Proceedings. 1049: 41-48. DOI: 10.1557/Proc-1049-Aa03-06 |
0.721 |
|
| 2008 |
Coletti C, Frewin CL, Hoff AM, Saddow SE. Electronic passivation of 3C-SiC(001) via hydrogen treatment Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2961590 |
0.754 |
|
| 2007 |
Coletti C, Jaroszeski MJ, Pallaoro A, Hoff AM, Iannotta S, Saddow SE. Biocompatibility and wettability of crystalline SiC and Si surfaces. Conference Proceedings : ... Annual International Conference of the Ieee Engineering in Medicine and Biology Society. Ieee Engineering in Medicine and Biology Society. Annual Conference. 2007: 5850-3. PMID 18003344 DOI: 10.1109/IEMBS.2007.4353678 |
0.615 |
|
| 2007 |
Shishkin Y, Rao SP, Kordina O, Agafonov I, Maltsev AA, Hassan Ju, Henry A, Moisson C, Saddow SE. CVD of 6H-SiC on Non-Basal Quasi Polar Faces Materials Science Forum. 73-76. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.73 |
0.363 |
|
| 2007 |
Shishkin Y, Myers-Ward RL, Saddow SE, Galyukov A, Vorob'ev AN, Brovin D, Bazarevskiy D, Talalaev RA, Makarov YN. Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling Materials Science Forum. 61-64. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.61 |
0.559 |
|
| 2007 |
Clouter MJ, Ke Y, Devaty RP, Choyke WJ, Shishkin Y, Saddow SE. Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates Materials Science Forum. 415-418. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.415 |
0.359 |
|
| 2007 |
Reyes M, Shishkin Y, Harvey S, Saddow SE. Increased growth rates of 3C-SiC on Si (100) substrates via HCl growth additive Materials Science Forum. 191-194. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.191 |
0.443 |
|
| 2007 |
Tanner CM, Perng YC, Frewin C, Saddow SE, Chang JP. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC Applied Physics Letters. 91. DOI: 10.1063/1.2805742 |
0.699 |
|
| 2007 |
Coletti C, Frewin CL, Saddow SE, Hetzel M, Virojanadara C, Starke U. Surface studies of hydrogen etched 3C-SiC (001) on Si(001) Applied Physics Letters. 91. DOI: 10.1063/1.2768870 |
0.783 |
|
| 2006 |
Rao SP, Bergamini F, Nipoti R, Hoff AM, Oborina E, Saddow SE. Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD Materials Science Forum. 839-842. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.839 |
0.365 |
|
| 2006 |
Bergamini F, Rao SP, Poggi A, Tamarri F, Saddow SE, Nipoti R. Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor Materials Science Forum. 819-822. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.819 |
0.329 |
|
| 2006 |
Starke U, Lee WY, Coletti C, Saddow SE, Devaty RP, Choyke WJ. SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2) Materials Science Forum. 677-680. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.677 |
0.603 |
|
| 2006 |
Reyes M, Waits M, Harvey S, Shishkin Y, Geil B, Wolan JT, Saddow SE. Growth of 3C-SiC on Si Molds for MEMS Applications Materials Science Forum. 307-310. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.307 |
0.477 |
|
| 2006 |
Shishkin Y, Ke Y, Yan F, Devaty RP, Choyke WJ, Saddow SE. CVD epitaxial growth of 4H-SiC on porous SiC substrates Materials Science Forum. 255-258. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.255 |
0.423 |
|
| 2006 |
Myers-Ward RL, Shishkin Y, Kordina O, Haselbarth I, Saddow SE. High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD Materials Science Forum. 187-190. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.187 |
0.618 |
|
| 2006 |
Coletti C, Jaroszeski MJ, Hoff AM, Saddow SE. Culture of Mammalian Cells on Single Crystal SiC Substrates Mrs Proceedings. 950. DOI: 10.1557/Proc-0950-D04-22 |
0.619 |
|
| 2006 |
Chen Y, Dhanaraj G, Dudley M, Zhang H, Ma R, Shishkin Y, Saddow SE. Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B09-04 |
0.406 |
|
| 2006 |
Coletti C, Hetzel M, Virojanadara C, Starke U, Saddow SE. Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001) Mrs Proceedings. 911: 131-136. DOI: 10.1557/Proc-0911-B08-02 |
0.652 |
|
| 2006 |
Reyes M, Shishkin Y, Harvey S, Saddow SE. Development of a high-growth rate 3C-SiC on Si CVD process Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B08-01 |
0.436 |
|
| 2006 |
Soubatch S, Lee WY, Hetzel M, Virojanadara C, Coletti C, Saddow SE, Starke U. Atomic Structure of Non-Basal-Plane SiC Surfaces : Hydrogen Etching and Surface Phase Transformations Mrs Proceedings. 911: 271-282. DOI: 10.1557/Proc-0911-B07-01 |
0.604 |
|
| 2006 |
Shishkin Y, Oborina E, Maltsev A, Saddow SE, Hoff AM. Oxide of non-basal quasi-polar 6H-SiC surfaces Journal of Physics D. 39: 2692-2695. DOI: 10.1088/0022-3727/39/13/009 |
0.341 |
|
| 2006 |
Fawcett TJ, Wolan JT, Spetz AL, Reyes M, Saddow SE. Thermal detection mechanism of SiC based hydrogen resistive gas sensors Applied Physics Letters. 89: 182102. DOI: 10.1063/1.2360905 |
0.414 |
|
| 2006 |
Starke U, Lee WY, Coletti C, Saddow SE, Devaty RP, Choyke WJ. SiC pore surfaces: Surface studies of 4H-SiC(1 1̄-02) and 4H-SiC(1̄ 102̄) Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2166484 |
0.615 |
|
| 2006 |
Rao S, Bergamini F, Nipoti R, Saddow SE. Silane overpressure post-implant annealing of al dopants in SiC : Cold wall CVD apparatus Applied Surface Science. 252: 3837-3842. DOI: 10.1016/J.Apsusc.2005.06.014 |
0.38 |
|
| 2005 |
Soubatch S, Saddow SE, Rao SP, Lee WY, Konuma M, Starke U. Structure and Morphology of 4H-SiC Wafer Surfaces after H2-Etching Materials Science Forum. 761-764. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.761 |
0.405 |
|
| 2005 |
Myers-Ward RL, Kordina O, Shishkin Z, Rao SP, Everly R, Saddow SE. Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive Materials Science Forum. 73-76. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.73 |
0.61 |
|
| 2005 |
Bergamini F, Rao SP, Saddow SE, Nipoti R. J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600°C Materials Science Forum. 629-632. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.629 |
0.34 |
|
| 2005 |
Mank H, Moisson C, Turover D, Twigg ME, Saddow SE. Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers Materials Science Forum. 197-200. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.197 |
0.52 |
|
| 2005 |
Myers RL, Shishkin Y, Kordina O, Saddow SE. High growth rates (>30 μm/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor Journal of Crystal Growth. 285: 486-490. DOI: 10.1016/J.Jcrysgro.2005.09.037 |
0.432 |
|
| 2004 |
Koshka Y, Song Y, Walker J, Saddow SE, Mynbaeva M. Spin-on doping of porous SiC with Er Materials Science Forum. 457: 763-766. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.763 |
0.505 |
|
| 2004 |
Myers-Ward RL, Saddow SE, Rao SP, Hobart KD, Fatemi M, Kub FJ. Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates Materials Science Forum. 1511-1514. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1511 |
0.673 |
|
| 2004 |
Fawcett TJ, Wolan JT, Myers-Ward RL, Walker J, Saddow SE. Hydrogen Gas Sensors using 3C-SiC/Si Epitaxial Layers Materials Science Forum. 1499-1502. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1499 |
0.699 |
|
| 2004 |
Hoff AM, Oborina E, Saddow SE, Savtchouk A. Thermal Oxidation of 4H-Silicon Using the Afterglow Method Materials Science Forum. 1349-1352. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1349 |
0.316 |
|
| 2004 |
Myers RL, Hobart KD, Twigg M, Rao S, Fatemi M, Kub FJ, Saddow SE. Structural characterization of 3C-SiC films grown on Si layers wafer bonded to polycrystalline SiC substrates Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J5.23 |
0.49 |
|
| 2004 |
Rao S, Saddow SE, Bergamini F, Nipoti R, Emirov Y, Agrawal A. A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J1.5 |
0.366 |
|
| 2004 |
Ivanov PA, Mynbaeva MG, Saddow SE. Effective carrier density in porous silicon carbide Semiconductor Science and Technology. 19: 319-322. DOI: 10.1088/0268-1242/19/3/005 |
0.345 |
|
| 2004 |
Fawcett TJ, Wolan JT, Myers RL, Walker J, Saddow SE. Wide-range (0.33%-100%) 3C-SiC resistive hydrogen gas sensor development Applied Physics Letters. 85: 416-418. DOI: 10.1063/1.1773935 |
0.582 |
|
| 2004 |
Fang ZQ, Look DC, Chandrasekaran R, Rao S, Saddow SE. Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate Journal of Electronic Materials. 33: 456-459. DOI: 10.1007/S11664-004-0202-Y |
0.448 |
|
| 2003 |
Von Bardeleben HJ, Cantin JL, Mynbaeva M, Saddow SE. EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC Materials Science Forum. 433: 495-498. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.495 |
0.374 |
|
| 2003 |
Kohlscheen J, Emirov YN, Beerbom MM, Wolan JT, Saddow SE, Chung G, MacMillan MF, Schlaf R. Band line-up determination at p- and n-type AI/4H-SiC schottky interfaces using photoemission spectroscopy Journal of Applied Physics. 94: 3931-3938. DOI: 10.1063/1.1599050 |
0.43 |
|
| 2003 |
Doǧan S, Teke A, Huang D, Morkoç H, Roberts CB, Parish J, Ganguly B, Smith M, Myers RE, Saddow SE. 4H–SiC photoconductive switching devices for use in high-power applications Applied Physics Letters. 82: 3107-3109. DOI: 10.1063/1.1571667 |
0.372 |
|
| 2002 |
Ostapenko SS, Smith MCD, Tarasov I, Wolan JT, Mynbaeva MG, Goings J, McKeon JCP, Saddow SE. Scanning Acoustic Microscopy in Porous SiC Materials Science Forum. 687-690. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.687 |
0.347 |
|
| 2002 |
Saddow SE, Elkington T, Smith MCD. Reduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed Crystals Materials Science Forum. 399-402. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.399 |
0.327 |
|
| 2002 |
Hoff AM, Tibrewala A, Saddow SE. Afterglow Thermal Oxidation of Silicon Carbide Mrs Proceedings. 742. DOI: 10.1557/Proc-742-K4.7 |
0.363 |
|
| 2002 |
Raghothamachar B, Bai J, Vetter WM, Gouma P, Dudley M, Mynbaeva M, Smith MT, Saddow SE. Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them Mrs Proceedings. 742. DOI: 10.1557/Proc-742-K2.11 |
0.452 |
|
| 2002 |
Ostapenko S, Suleimanov YM, Tarasov I, Lulu S, Saddow SE. Thermally stimulated luminescence in full-size 4H-SiC wafers Journal of Physics Condensed Matter. 14: 13381-13386. DOI: 10.1088/0953-8984/14/48/392 |
0.327 |
|
| 2002 |
Wolan JT, Grayson BA, Kohlscheen J, Emirov Y, Schlaf R, Swartz W, Saddow SE. Effect of Hydrogen etching and subsequent sacrificial thermal oxidation on morphology and composition of 4H-SiC surfaces Journal of Electronic Materials. 31: 380-383. DOI: 10.1007/S11664-002-0087-6 |
0.379 |
|
| 2001 |
Saddow SE, Mynbaeva M, Choyke WJ, Devaty RP, Bai S, Melnychuck G, Koshka Y, Dmitriev V, Wood CEC. SiC defect density reduction by epitaxy on porous surfaces Materials Science Forum. 353: 115-118. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.115 |
0.488 |
|
| 2001 |
Roe KJ, Katulka G, Kolodzey J, Saddow SE, Jacobson D. Silicon carbide and silicon carbide:Germanium heterostructure bipolar transistors Applied Physics Letters. 78: 2073-2075. DOI: 10.1063/1.1358851 |
0.434 |
|
| 2001 |
Mynbaeva M, Saddow SE, Melnychuk G, Nikitina I, Scheglov M, Sitnikova A, Kuznetsov N, Mynbaev K, Dmitriev V. Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates Applied Physics Letters. 78: 117-119. DOI: 10.1063/1.1337628 |
0.402 |
|
| 2001 |
Kuznetsov NI, Mynbaeva MG, Melnychuk G, Dmitriev VA, Saddow SE. Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates Applied Surface Science. 184: 483-486. DOI: 10.1016/S0169-4332(01)00538-4 |
0.401 |
|
| 2001 |
Wolan JT, Grayson BA, Akshoy G, Saddow SE. Characterization of single-crystal SiC polytypes using X-ray and Auger photoelectron spectroscopy Applied Surface Science. 184: 167-172. DOI: 10.1016/S0169-4332(01)00497-4 |
0.309 |
|
| 2001 |
Saddow SE, Mynbaeva M, Smith MCD, Smirnov AN, Dimitriev V. Growth of SiC epitaxial layers on porous surfaces of varying porosity Applied Surface Science. 184: 72-78. DOI: 10.1016/S0169-4332(01)00479-2 |
0.427 |
|
| 2001 |
Sankin I, Casady JB, Dufrene JB, Draper WA, Kretchmer J, Vandersand J, Kumar V, Mazzola MS, Saddow SE. On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal Solid-State Electronics. 45: 1653-1657. DOI: 10.1016/S0038-1101(01)00152-6 |
0.396 |
|
| 2001 |
Saddow SE, Schattner TE, Brown J, Grazulis L, Mahalingam K, Landis G, Bertke R, Mitchel WC. Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers Journal of Electronic Materials. 30: 228-234. DOI: 10.1007/S11664-001-0021-3 |
0.413 |
|
| 2001 |
Mynbaeva M, Bazhenov N, Mynbaev K, Evstropov V, Saddow SE, Koshka Y, Melnik Y. Photoconductivity in porous GaN layers Physica Status Solidi (B) Basic Research. 228: 589-592. DOI: 10.1002/1521-3951(200111)228:2<589::Aid-Pssb589>3.0.Co;2-J |
0.354 |
|
| 2000 |
Saddow SE, Williams J, Isaacs-Smith T, Capano MA, Cooper JA, Mazzola MS, Hsieh AJ, Casady JB. High temperature implant activation in 4H and 6H-SiC in a silane ambient to reduce step bunching Materials Science Forum. 338: 901-904. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.901 |
0.405 |
|
| 2000 |
Los AV, Mazzola MS, Saddow SE. Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC Materials Science Forum. 745-748. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.745 |
0.302 |
|
| 2000 |
Shamsuzzoha M, Saddow SE, Schattner TE, Jin L, Dudley M, Rendakova SV, Dmitriev V. Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes Materials Science Forum. 453-456. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.453 |
0.411 |
|
| 2000 |
Saddow SE, Carter GE, Geil B, Zheleva TS, Melnychuck G, Okhuysen ME, Mazzola MS, Vispute RD, Derenge MA, Ervin MH, Jones KA. Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates Materials Science Forum. 245-248. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.245 |
0.487 |
|
| 2000 |
Schattner TE, Casady JB, Smith MCD, Mazzola MS, Dmitriev V, Rentakova SV, Saddow SE. 4H-SiC Device Scaling Development on Repaired Micropipe Substrates Materials Science Forum. 1203-1206. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1203 |
0.43 |
|
| 2000 |
Carter GE, Casady JB, Bonds J, Okhuysen ME, Scofield JD, Saddow SE. Preliminary Investigation of SiC on Silicon for Biomedical Applications Materials Science Forum. 1149-1154. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1149 |
0.42 |
|
| 2000 |
Grayson BA, Wolan JT, Graves M, Bledsoe M, Kirchner K, Saddow SE. Comparison of 3C-SiC Films Grown By CVD on Si(111) and Si(211) Substrates Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H5.43 |
0.489 |
|
| 2000 |
Saddow SE, Melnychuk G, Mynbaeva M, Nikitina I, Vetter WM, Jin L, Dudley M, Shamsuzzoha M, Dmitriev V, Wood CEC. Structural Characterization Of Sic Epitaxial Layers Grown On Porous Sic Substrates Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H2.7 |
0.399 |
|
| 2000 |
Wolan JT, Gopalkrishna A, Saddow SE, Mynbaeu M, Morkoç H, Reshchikov M, Yun F, Dmitriev V, Wood C. Preliminary Characterization of GaN MBE Epitaxial Layers Grown on Nanoporous 6H-SiC Substrates Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G11.41 |
0.485 |
|
| 2000 |
Carter GE, Zheleva T, Melnychuck G, Geil B, Jones K, Saddow SE. Pendeo Epitaxy Of 3C-SiC on Si Substrates Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T6.3.1 |
0.524 |
|
| 2000 |
Wolan JT, Koshka Y, Saddow SE, Melnik YV, Dmitriev V. Characterization of thin GaN layers deposited by Hydride Vapour Phase Epitaxy (HVPE) on 6H-SiC substrates Materials Research Society Symposium - Proceedings. 622. DOI: 10.1557/Proc-622-T5.7.1 |
0.392 |
|
| 2000 |
Melnychuck G, Mynbaeva M, Rendakova S, Dmitriev V, Saddow SE. SiC epitaxial growth on porous SiC substrates Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T4.2.1 |
0.513 |
|
| 2000 |
Saddow SE, Schattner TE, Shamsuzzoha M, Rendakova SV, Dmitriev VA. TEM investigation of silicon carbide wafers with reduced micropipe density Journal of Electronic Materials. 29: 364-367. DOI: 10.1007/S11664-000-0078-4 |
0.468 |
|
| 1999 |
Saddow SE, Mazzola MS, Rendakova SV, Dmitriev VA. Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density Materials Science and Engineering B-Advanced Functional Solid-State Materials. 61: 158-160. DOI: 10.1016/S0921-5107(98)00492-9 |
0.384 |
|
| 1999 |
Mazzola MS, Saddow SE, Schöner A. Close compensation of 6H and 4H silicon carbide by silicon-to-carbon ratio control Materials Science and Engineering B-Advanced Functional Solid-State Materials. 61: 155-157. DOI: 10.1016/S0921-5107(98)00491-7 |
0.399 |
|
| 1998 |
Mazzola MS, Saddow SE, Schöner A. Boron Compensation of 6H Silicon Carbide Materials Science Forum. 119-122. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.119 |
0.369 |
|
| 1998 |
Saddow SE, Okhusyen ME, Mazzola MS, Dudley M, Huang XR, Huang W, Su H, Shamsuzzoha M, Lo YH. Characterization of Single-Crystal 3C-SIC Epitaxial Layers on SI Substrates Mrs Proceedings. 535. DOI: 10.1557/Proc-535-107 |
0.52 |
|
| 1995 |
Saddow SE, Lee CH. Optical control of microwave-integrated circuits using high-speed GaAs and Si photoconductive switches Ieee Transactions On Microwave Theory and Techniques. 43: 2414-2420. DOI: 10.1109/22.414597 |
0.332 |
|
| 1995 |
Cho PS, Goldhar J, Lee CH, Saddow SE, Neudeck P. Photoconductive and photovoltaic response of high-dark-resistivity 6H-SiC devices Journal of Applied Physics. 77: 1591-1599. DOI: 10.1063/1.358912 |
0.51 |
|
| 1995 |
Saddow SE, Lang M, Dalibor T, Pensl G, Neudeck PG. Thermal capacitance spectroscopy of epitaxial 3C and 6H‐SiC pn junction diodes grown side by side on a 6H‐SiC substrate Applied Physics Letters. 66: 3612-3614. DOI: 10.1063/1.113804 |
0.375 |
|
| 1994 |
Mazzola MS, Saddow SE, Neudeck PG, Lakdawala VK, We S. Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor deposition Applied Physics Letters. 64: 2730-2732. DOI: 10.1063/1.111457 |
0.355 |
|
| 1993 |
Saddow SE, Cho PS, Goldhar J, Palmour J, Lee CH. Photoconductive measurements on P-type 6H-SiC Proceedings of Spie. 1873: 110-116. DOI: 10.1117/12.146557 |
0.52 |
|
| 1993 |
Saddow SE, Thedrez BJ, Huang SL, Mermagen TJ, Lee CH. Investigation of the temperature and electric field dependence of a GaAs microwave photoconductive switch Proceedings of Spie. 1873: 89-96. DOI: 10.1117/12.146555 |
0.475 |
|
| 1993 |
Saddow SE, Thedrez BJ, Lee CH. An optoelectronic attenuator for the control of microwave circuits Ieee Microwave and Guided Wave Letters. 3: 361-362. DOI: 10.1109/75.242261 |
0.499 |
|
| 1993 |
Yang S, Thedrez BJ, Saddow SE, Wood C, Wilson R, Lee CH. Cross-correlation measurement of the turn-on delay and pulsewidth of a Q-switched two-section semiconductor laser Ieee Photonics Technology Letters. 5: 1365-1368. DOI: 10.1109/68.262542 |
0.442 |
|
| 1993 |
Thedrez BJ, Saddow SE, Liu YQ, Wood C, Wilson R, Lee CH. Experimental and theoretical investigation of large output power Q-switched AlGaAs semiconductor lasers Ieee Photonics Technology Letters. 5: 19-22. DOI: 10.1109/68.185047 |
0.429 |
|
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