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Christopher Locke, Ph.D. - Publications

Affiliations: 
2011 Electrical Engineering University of South Florida, Tampa, FL, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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25 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Severino A, Locke C, Anzalone R, Camarda M, Piluso N, La Magna A, Saddow S, Abbondanza G, D'Arrigo G, La Via F. 3C-SiC Film Growth on Si Substrates Ecs Transactions. 35: 99-116. DOI: 10.1149/1.3570851  0.533
2013 Anzalone R, Camarda M, Locke C, Carballo J, Piluso N, La Magna A, Volinsky AA, Saddow SE, La Via F. Stress nature investigation on heteroepitaxial 3C-SiC film on (100) Si substrates Journal of Materials Research. 28: 129-135. DOI: 10.1557/Jmr.2012.224  0.721
2012 Anzalone R, Camarda M, Locke C, Carballo J, Piluso N, D'Arrigo G, Severino A, Volinsky AA, Saddow SE, La Via F. Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates Materials Science Forum. 717: 521-524. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.521  0.73
2012 La Via F, D’Arrigo G, Severino A, Piluso N, Mauceri M, Locke C, Saddow SE. Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate Journal of Materials Research. 28: 94-103. DOI: 10.1557/Jmr.2012.268  0.676
2011 Frewin CL, Locke C, Saddow SE, Weeber EJ. Single-crystal cubic silicon carbide: an in vivo biocompatible semiconductor for brain machine interface devices. Conference Proceedings : ... Annual International Conference of the Ieee Engineering in Medicine and Biology Society. Ieee Engineering in Medicine and Biology Society. Annual Conference. 2011: 2957-60. PMID 22254961 DOI: 10.1109/IEMBS.2011.6090582  0.765
2011 Oliveros A, Coletti C, Frewin CL, Locke C, Starke U, Saddow SE. Cellular interactions on epitaxial graphene on SiC (0001) substrates Materials Science Forum. 679: 831-834. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.831  0.736
2011 Anzalone R, Camarda M, D'Arrigo G, Locke C, Canino A, Piluso N, Severino A, Magna AL, Saddow SE, Via FL. Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application Materials Science Forum. 133-136. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.133  0.676
2011 Anzalone R, D'Arrigo G, Camarda M, Locke C, Saddow SE, Via FL. Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C–SiC for MEMS Application Ieee\/Asme Journal of Microelectromechanical Systems. 20: 745-752. DOI: 10.1109/Jmems.2011.2127451  0.666
2011 Zhang F, Perng YC, Choi JH, Wu T, Chung TK, Carman GP, Locke C, Thomas S, Saddow SE, Chang JP. Atomic layer deposition of Pb(Zr,Ti)Ox on 4H-SiC for metal-ferroelectric-insulator-semiconductor diodes Journal of Applied Physics. 109. DOI: 10.1063/1.3596574  0.654
2010 Anzalone R, Camarda M, Alquier D, Italia M, Severino A, Piluso N, Magna AL, Foti G, Locke C, Saddow SE, Roncaglia A, Mancarella F, Poggi A, D'Arrigo G, Via FL. Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers. Materials Science Forum. 865-868. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.865  0.713
2010 Anzalone R, Locke C, Carballo J, Piluso N, Severino A, D'Arrigo G, Volinsky AA, La Via F, Saddow SE. Growth rate effect on 3C-SiC film residual stress on (100) Si substrates Materials Science Forum. 645: 143-146. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.143  0.72
2010 Locke C, Frewin C, Abbati L, Saddow SE. Demonstration of 3C-SiC MEMS Structures on Polysilicon-on-oxide Substrates Mrs Proceedings. 1246. DOI: 10.1557/Proc-1246-B08-05  0.805
2010 Frewin CL, Oliveros A, Locke C, Filonova I, Rogers J, Weeber E, Saddow SE. The development of silicon carbide based electrode devices for central nervous system biomedical implants Materials Research Society Symposium Proceedings. 1236: 78-83. DOI: 10.1557/Proc-1236-Ss01-02  0.734
2010 Anzalone R, Camarda M, Locke C, Alquier D, Severino A, Italia M, Rodilosso D, Tringali C, La Magna A, Foti G, Saddow SE, La Via F, D’Arrigo G. Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis Journal of the Electrochemical Society. 157: H438. DOI: 10.1149/1.3298872  0.737
2009 Locke C, Kravchenko G, Waters P, Reddy JD, Du K, Volinsky AA, Frewin CL, Saddow SE. 3C-SiC films on Si for MEMS applications: Mechanical properties Materials Science Forum. 615: 633-636. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.633  0.811
2009 Anzalone R, Locke C, Severino A, Rodilosso D, Tringali C, Foti G, Saddow SE, Via FL, D'Arrigo G. Residual Stress Measurement on Hetero-epitaxial 3C-SiC Films Materials Science Forum. 629-632. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.629  0.734
2009 Picard YN, Locke C, Frewin CL, Twigg ME, Saddow SE. Crystalline quality and surface morphology of 3C-SiC films on Si evaluated by electron channeling contrast imaging Materials Science Forum. 615: 435-438. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.435  0.782
2009 Locke C, Frewin CL, Wang J, Saddow SE. Growth of single crystal 3C-SiC(111) on a poly-Si seed layer Materials Science Forum. 615: 157-160. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.157  0.789
2009 Locke C, Anzalone R, Severino A, Bongiorno C, Litrico G, Via FL, Saddow SE. High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111) Materials Science Forum. 145-148. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.145  0.715
2009 Frewin C, Oliveros A, Locke C, Filonova I, Rogers J, Weeber E, Saddow SE. The Development of Silicon Carbide Based Electrode Devices for Central Nervous System Biomedical Implants Mrs Proceedings. 1236. DOI: 10.1557/PROC-1236-SS01-02  0.309
2009 Gomez H, Frewin CL, Kumar A, Saddow S, Locke C. Study of the Adhesion and Biocompatibility of Nanocrystalline Diamond (NCD) Films on 3C-SiC Substrates Mrs Proceedings. 1203. DOI: 10.1557/Proc-1203-J08-05  0.786
2009 Frewin CL, Locke C, Wang J, Spagnol P, Saddow SE. Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications Journal of Crystal Growth. 311: 4179-4182. DOI: 10.1016/J.Jcrysgro.2009.06.037  0.806
2008 Anzalone R, Severino A, Locke C, Rodilosso D, Tringali C, Saddow SE, La Via F, D'Arrigo G. 3C-SiC Hetero-Epitaxial Films for Sensors Fabrication Advances in Science and Technology. 54: 411-415. DOI: 10.4028/Www.Scientific.Net/Ast.54.411  0.704
2008 Picard YN, Locke C, Frewin CL, Myers-Ward RL, Caldwell JD, Hobart KD, Twigg ME, Saddow SE. Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C07-08  0.765
2008 Picard YN, Locke C, Frewin CL, Myers-Ward RL, Caldwell JD, Hobart KD, Twigg ME, Saddow SE. Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging Materials Research Society Symposium Proceedings. 1068: 255-260.  0.793
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