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Roman Y. Korotkov, Ph.D. - Publications

Affiliations: 
2001 Northwestern University, Evanston, IL 
Area:
Materials Science Engineering
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33 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Kim H, Bonsu RO, O'Donohue C, Korotkov RY, McElwee-White L, Anderson TJ. Aerosol-assisted chemical vapor deposition of tungsten oxide films and nanorods from oxo tungsten(VI) fluoroalkoxide precursors. Acs Applied Materials & Interfaces. 7: 2660-7. PMID 25569472 DOI: 10.1021/Am507706E  0.334
2015 Koley A, O'Donohue CT, Nolan MM, McClain KR, Bonsu RO, Korotkov RY, Anderson T, McElwee-White L. Effect of the Ligand Structure on Chemical Vapor Deposition of WNxCy Thin Films from Tungsten Nitrido Complexes of the Type WN(NR2)3 Chemistry of Materials. 27: 8326-8336. DOI: 10.1021/Acs.Chemmater.5B03691  0.343
2012 Schwenzer B, Wang L, Swensen JS, Padmaperuma AB, Silverman G, Korotkov R, Gaspar DJ. Tuning the optical properties of mesoporous TiO2 films by nanoscale engineering. Langmuir : the Acs Journal of Surfaces and Colloids. 28: 10072-81. PMID 22662748 DOI: 10.1021/La301450H  0.357
2012 Korotkov RY. Properties of TCO anodes deposited by atmospheric pressure chemical vapor deposition and their application to OLED lighting Proceedings of Spie - the International Society For Optical Engineering. 8263. DOI: 10.1117/12.906723  0.389
2011 Korotkov RY, Ricou P, Fang L, Coffey J, Silverman G, Ruske M, Schwab H, Padmaperuma AB, Gaspar DJ. Properties of TCO anodes deposited by APCVD and their applications to OLEDs Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875319  0.457
2008 Korotkov RY, Gupta R, Ricou P, Smith R, Silverman G. Atmospheric plasma discharge chemical vapor deposition of SnOx thin films using various tin precursors Thin Solid Films. 516: 4720-4727. DOI: 10.1016/J.Tsf.2007.08.074  0.424
2005 Abdel-Motaleb IM, Korotkov RY. Modeling of electron mobility in GaN materials Journal of Applied Physics. 97. DOI: 10.1063/1.1891278  0.375
2005 Alivov YI, Chernykh AV, Chukichev MV, Korotkov RY. Thin polycrystalline zinc oxide films obtained by oxidation of metallic zinc films Thin Solid Films. 473: 241-246. DOI: 10.1016/J.Tsf.2004.07.068  0.512
2004 Korotkov RY, Farran AJE, Gulp T, Russo D, Roger C. Transport properties of undoped and NH 3-doped polycrystalline SnO 2 with low background electron concentrations Journal of Applied Physics. 96: 6445-6453. DOI: 10.1063/1.1805722  0.5
2004 Han B, Korotkov RY, Wessels BW, Ulmer MP. Optical properties of Mn 4+ ions in GaN:Mn codoped with Mg acceptors Applied Physics Letters. 84: 5320-5322. DOI: 10.1063/1.1766082  0.627
2003 Korotkov RY, Reshchikov MA, Wessels BW. Acceptors in undoped GaN studied by transient photoluminescence Physica B: Condensed Matter. 325: 1-7. DOI: 10.1016/S0921-4526(02)01209-7  0.675
2002 Korotkov RY, Gregie JM, Wessels BW. Optical properties of the deep Mn acceptor in GaN:Mn Applied Physics Letters. 80: 1731-1733. DOI: 10.1063/1.1456544  0.809
2002 Korotkov RY, Gregie JM, Wessels BW. Codoping of wide gap epitaxial III-Nitride semiconductors Opto-Electronics Review. 10: 243-249.  0.796
2001 Ulmer MP, Wessels BW, Shahedipour F, Korotkov RY, Joseph C, Nihashi T. Progress in the fabrication of GaN photo-cathodes Proceedings of Spie - the International Society For Optical Engineering. 4288: 246-253. DOI: 10.1117/12.429433  0.511
2001 Reshchikov MA, Korotkov RY. Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped gan films Physical Review B - Condensed Matter and Materials Physics. 64: 1152051-11520511. DOI: 10.1103/Physrevb.64.115205  0.45
2001 Korotkov RY, Gregie JM, Wessels BW. Electrical properties of p-type GaN:Mg codoped with oxygen Applied Physics Letters. 78: 222-224. DOI: 10.1063/1.1335542  0.806
2001 Korotkov RY, Gregie JM, Wessels BW. Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy Physica B: Condensed Matter. 308: 30-33. DOI: 10.1016/S0921-4526(01)00660-3  0.817
2001 Korotkov RY, Niu F, Gregie JM, Wessels BW. Investigation of the defect structure of GaN heavily doped with oxygen Physica B: Condensed Matter. 308: 26-29. DOI: 10.1016/S0921-4526(01)00658-5  0.799
2001 Korotkov RY, Gregie JM, Han B, Wessels BW. Optical study of GaN: Mn co-doped with Mg grown by metal organic vapor phase epitaxy Physica B: Condensed Matter. 308: 18-21. DOI: 10.1016/S0921-4526(01)00654-8  0.817
2001 Korotkov RY, Gregie JM, Wessels BW. Optical study of GaN doped with Mn grown by metal organic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 639.  0.827
2001 Korotkov RY, Gregie JM, Wessels BW. Photoluminescence studies of p-type GaN:Mg co-doped with oxygen Materials Research Society Symposium - Proceedings. 639.  0.83
2001 Gregie JM, Korotkov RY, Wessels BW. Deep level formation in undoped and oxygen-doped GaN Materials Research Society Symposium - Proceedings. 639.  0.823
2000 Korotkov R, Wessels B. Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 5: 301-307. DOI: 10.1557/S1092578300004427  0.63
2000 Korotkov RY, Gregie JM, Wessels BW. Photoluminescence Studies of p-type GaN:Mg Co-doped with Oxygen Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G6.39  0.825
2000 Korotkov RY, Gregie JM, Wessels BW. Optical Study of GaN Doped with Mn Grown by Metal Organic Vapor Phase Epitaxy Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G3.7  0.822
2000 Gregie JM, Korotkov RY, Wessels BW. Deep Level Formation in Undoped and Oxygen-Doped GaN Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G11.56  0.818
2000 Reshchikov MA, Shahedipour F, Korotkov RY, Wessels BW, Ulmer MP. Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers Journal of Applied Physics. 87: 3351-3354. DOI: 10.1063/1.372348  0.668
2000 Korotkov RY, Wessels BW. Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 5.  0.464
1999 Korotkov R, Wessels B. Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy Mrs Proceedings. 595. DOI: 10.1557/S1092578300004427  0.669
1999 Reshchikov MA, Shahedipour F, Korotkov RY, Ulmer MP, Wessels BW. Deep acceptors in undoped GaN Physica B: Condensed Matter. 273: 105-108. DOI: 10.1016/S0921-4526(99)00417-2  0.656
1999 Korotkov RY, Reshchikov MA, Wessels BW. Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy Physica B: Condensed Matter. 273: 80-83. DOI: 10.1016/S0921-4526(99)00411-1  0.674
1998 Ding YJ, Korotkov R, Khurgin JB, Rabinovich WS, Katzer DS. Observation of an anomalously large blueshift of apparent donor–acceptor pair transition peak in compensation-doped quantum wells Applied Physics Letters. 72: 534-536. DOI: 10.1063/1.120812  0.396
1998 Ding YJ, Korotkov RY, Khurgin JB, Rabinovich WS, Katzer DS. First observation of anomalously large blueshift of apparent donor-acceptor pair transition peak in compensation-doped quantum wells Technical Digest - European Quantum Electronics Conference. 188.  0.364
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