Year |
Citation |
Score |
2015 |
Kim H, Bonsu RO, O'Donohue C, Korotkov RY, McElwee-White L, Anderson TJ. Aerosol-assisted chemical vapor deposition of tungsten oxide films and nanorods from oxo tungsten(VI) fluoroalkoxide precursors. Acs Applied Materials & Interfaces. 7: 2660-7. PMID 25569472 DOI: 10.1021/Am507706E |
0.334 |
|
2015 |
Koley A, O'Donohue CT, Nolan MM, McClain KR, Bonsu RO, Korotkov RY, Anderson T, McElwee-White L. Effect of the Ligand Structure on Chemical Vapor Deposition of WNxCy Thin Films from Tungsten Nitrido Complexes of the Type WN(NR2)3 Chemistry of Materials. 27: 8326-8336. DOI: 10.1021/Acs.Chemmater.5B03691 |
0.343 |
|
2012 |
Schwenzer B, Wang L, Swensen JS, Padmaperuma AB, Silverman G, Korotkov R, Gaspar DJ. Tuning the optical properties of mesoporous TiO2 films by nanoscale engineering. Langmuir : the Acs Journal of Surfaces and Colloids. 28: 10072-81. PMID 22662748 DOI: 10.1021/La301450H |
0.357 |
|
2012 |
Korotkov RY. Properties of TCO anodes deposited by atmospheric pressure chemical vapor deposition and their application to OLED lighting Proceedings of Spie - the International Society For Optical Engineering. 8263. DOI: 10.1117/12.906723 |
0.389 |
|
2011 |
Korotkov RY, Ricou P, Fang L, Coffey J, Silverman G, Ruske M, Schwab H, Padmaperuma AB, Gaspar DJ. Properties of TCO anodes deposited by APCVD and their applications to OLEDs Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875319 |
0.457 |
|
2008 |
Korotkov RY, Gupta R, Ricou P, Smith R, Silverman G. Atmospheric plasma discharge chemical vapor deposition of SnOx thin films using various tin precursors Thin Solid Films. 516: 4720-4727. DOI: 10.1016/J.Tsf.2007.08.074 |
0.424 |
|
2005 |
Abdel-Motaleb IM, Korotkov RY. Modeling of electron mobility in GaN materials Journal of Applied Physics. 97. DOI: 10.1063/1.1891278 |
0.375 |
|
2005 |
Alivov YI, Chernykh AV, Chukichev MV, Korotkov RY. Thin polycrystalline zinc oxide films obtained by oxidation of metallic zinc films Thin Solid Films. 473: 241-246. DOI: 10.1016/J.Tsf.2004.07.068 |
0.512 |
|
2004 |
Korotkov RY, Farran AJE, Gulp T, Russo D, Roger C. Transport properties of undoped and NH 3-doped polycrystalline SnO 2 with low background electron concentrations Journal of Applied Physics. 96: 6445-6453. DOI: 10.1063/1.1805722 |
0.5 |
|
2004 |
Han B, Korotkov RY, Wessels BW, Ulmer MP. Optical properties of Mn 4+ ions in GaN:Mn codoped with Mg acceptors Applied Physics Letters. 84: 5320-5322. DOI: 10.1063/1.1766082 |
0.627 |
|
2003 |
Korotkov RY, Reshchikov MA, Wessels BW. Acceptors in undoped GaN studied by transient photoluminescence Physica B: Condensed Matter. 325: 1-7. DOI: 10.1016/S0921-4526(02)01209-7 |
0.675 |
|
2002 |
Korotkov RY, Gregie JM, Wessels BW. Optical properties of the deep Mn acceptor in GaN:Mn Applied Physics Letters. 80: 1731-1733. DOI: 10.1063/1.1456544 |
0.809 |
|
2002 |
Korotkov RY, Gregie JM, Wessels BW. Codoping of wide gap epitaxial III-Nitride semiconductors Opto-Electronics Review. 10: 243-249. |
0.796 |
|
2001 |
Ulmer MP, Wessels BW, Shahedipour F, Korotkov RY, Joseph C, Nihashi T. Progress in the fabrication of GaN photo-cathodes Proceedings of Spie - the International Society For Optical Engineering. 4288: 246-253. DOI: 10.1117/12.429433 |
0.511 |
|
2001 |
Reshchikov MA, Korotkov RY. Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped gan films Physical Review B - Condensed Matter and Materials Physics. 64: 1152051-11520511. DOI: 10.1103/Physrevb.64.115205 |
0.45 |
|
2001 |
Korotkov RY, Gregie JM, Wessels BW. Electrical properties of p-type GaN:Mg codoped with oxygen Applied Physics Letters. 78: 222-224. DOI: 10.1063/1.1335542 |
0.806 |
|
2001 |
Korotkov RY, Gregie JM, Wessels BW. Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy Physica B: Condensed Matter. 308: 30-33. DOI: 10.1016/S0921-4526(01)00660-3 |
0.817 |
|
2001 |
Korotkov RY, Niu F, Gregie JM, Wessels BW. Investigation of the defect structure of GaN heavily doped with oxygen Physica B: Condensed Matter. 308: 26-29. DOI: 10.1016/S0921-4526(01)00658-5 |
0.799 |
|
2001 |
Korotkov RY, Gregie JM, Han B, Wessels BW. Optical study of GaN: Mn co-doped with Mg grown by metal organic vapor phase epitaxy Physica B: Condensed Matter. 308: 18-21. DOI: 10.1016/S0921-4526(01)00654-8 |
0.817 |
|
2001 |
Korotkov RY, Gregie JM, Wessels BW. Optical study of GaN doped with Mn grown by metal organic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 639. |
0.827 |
|
2001 |
Korotkov RY, Gregie JM, Wessels BW. Photoluminescence studies of p-type GaN:Mg co-doped with oxygen Materials Research Society Symposium - Proceedings. 639. |
0.83 |
|
2001 |
Gregie JM, Korotkov RY, Wessels BW. Deep level formation in undoped and oxygen-doped GaN Materials Research Society Symposium - Proceedings. 639. |
0.823 |
|
2000 |
Korotkov R, Wessels B. Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 5: 301-307. DOI: 10.1557/S1092578300004427 |
0.63 |
|
2000 |
Korotkov RY, Gregie JM, Wessels BW. Photoluminescence Studies of p-type GaN:Mg Co-doped with Oxygen Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G6.39 |
0.825 |
|
2000 |
Korotkov RY, Gregie JM, Wessels BW. Optical Study of GaN Doped with Mn Grown by Metal Organic Vapor Phase Epitaxy Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G3.7 |
0.822 |
|
2000 |
Gregie JM, Korotkov RY, Wessels BW. Deep Level Formation in Undoped and Oxygen-Doped GaN Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G11.56 |
0.818 |
|
2000 |
Reshchikov MA, Shahedipour F, Korotkov RY, Wessels BW, Ulmer MP. Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers Journal of Applied Physics. 87: 3351-3354. DOI: 10.1063/1.372348 |
0.668 |
|
2000 |
Korotkov RY, Wessels BW. Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 5. |
0.464 |
|
1999 |
Korotkov R, Wessels B. Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy Mrs Proceedings. 595. DOI: 10.1557/S1092578300004427 |
0.669 |
|
1999 |
Reshchikov MA, Shahedipour F, Korotkov RY, Ulmer MP, Wessels BW. Deep acceptors in undoped GaN Physica B: Condensed Matter. 273: 105-108. DOI: 10.1016/S0921-4526(99)00417-2 |
0.656 |
|
1999 |
Korotkov RY, Reshchikov MA, Wessels BW. Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy Physica B: Condensed Matter. 273: 80-83. DOI: 10.1016/S0921-4526(99)00411-1 |
0.674 |
|
1998 |
Ding YJ, Korotkov R, Khurgin JB, Rabinovich WS, Katzer DS. Observation of an anomalously large blueshift of apparent donor–acceptor pair transition peak in compensation-doped quantum wells Applied Physics Letters. 72: 534-536. DOI: 10.1063/1.120812 |
0.396 |
|
1998 |
Ding YJ, Korotkov RY, Khurgin JB, Rabinovich WS, Katzer DS. First observation of anomalously large blueshift of apparent donor-acceptor pair transition peak in compensation-doped quantum wells Technical Digest - European Quantum Electronics Conference. 188. |
0.364 |
|
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