Year |
Citation |
Score |
2014 |
Li Q, Xiong HD, Liang X, Zhu X, Gu D, Ioannou DE, Baumgart H, Richter CA. Self-assembled nanowire array capacitors: capacitance and interface state profile. Nanotechnology. 25: 135201. PMID 24584362 DOI: 10.1088/0957-4484/25/13/135201 |
0.634 |
|
2011 |
Liang X, Sperling BA, Calizo I, Cheng G, Hacker CA, Zhang Q, Obeng Y, Yan K, Peng H, Li Q, Zhu X, Yuan H, Walker AR, Liu Z, Peng LM, et al. Toward clean and crackless transfer of graphene. Acs Nano. 5: 9144-53. PMID 21999646 DOI: 10.1021/Nn203377T |
0.323 |
|
2011 |
Zhu X, Li Q, Ioannou DE, Gu D, Bonevich JE, Baumgart H, Suehle JS, Richter CA. Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells. Nanotechnology. 22: 254020. PMID 21572210 DOI: 10.1088/0957-4484/22/25/254020 |
0.641 |
|
2009 |
Li Q, Zhu X, Yang Y, Ioannou DE, Xiong HD, Kwon DW, Suehle JS, Richter CA. The large-scale integration of high-performance silicon nanowire field effect transistors. Nanotechnology. 20: 415202. PMID 19755723 DOI: 10.1088/0957-4484/20/41/415202 |
0.618 |
|
2009 |
Zhu X, Gu D, Li Q, Baumgart H, Ioannou DE, Suehle JS, Richter CA. Application of ALD high-k dielectric films as charge storage layer and blocking oxide in nonvolatile memories Ecs Transactions. 25: 473-479. DOI: 10.1149/1.3206647 |
0.42 |
|
2009 |
Zhu X, Li Q, Ioannou DE, Gu D, Baumgart H, Bonevich JE, Suehle JS, Richter CA. Silicon nanowire nonvolatile-memory with varying HfO2 charge trapping layer thickness 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378132 |
0.346 |
|
2009 |
Zhu X, Gu D, Li Q, Ioannou DE, Baumgart H, Suehle JS, Richter CA. Silicon nanowire NVM with high-k gate dielectric stack Microelectronic Engineering. 86: 1957-1960. DOI: 10.1016/J.Mee.2009.03.095 |
0.641 |
|
2008 |
Richter CA, Xiong HD, Zhu X, Wang W, Stanford VM, Hong WK, Lee T, Ioannou DE, Li Q. Metrology for the electrical characterization of semiconductor nanowires Ieee Transactions On Electron Devices. 55: 3086-3095. DOI: 10.1109/Ted.2008.2005394 |
0.617 |
|
2008 |
Li Q, Zhu X, Yang Y, Ioannou DE, Xiong HD, Suehle JS, Richter CA. Design, fabrication and characterization of high-performance silicon nanowire transistors 2008 8th Ieee Conference On Nanotechnology, Ieee-Nano. 526-529. DOI: 10.1109/NANO.2008.157 |
0.431 |
|
2008 |
Zhu X, Yang Y, Li Q, Ioannou DE, Suehle JS, Richter CA. Silicon nanowire NVM cell using high-k dielectric charge storage layer Microelectronic Engineering. 85: 2403-2405. DOI: 10.1016/J.Mee.2008.09.013 |
0.655 |
|
2007 |
Zhu X, Li Q, Ioannou DE, Kimes WA, Suehle JS, Maslar JE, Xiong HD, Yang S, Richter CA. Silicon nanowire memory application using hafnium oxide charge storage layer 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422492 |
0.359 |
|
2007 |
Li Q, Zhu X, Xiong HD, Koo SM, Ioannou DE, Kopanski JJ, Suehle JS, Richter CA. Silicon nanowire on oxide/nitride/oxide for memory application Nanotechnology. 18. DOI: 10.1088/0957-4484/18/23/235204 |
0.659 |
|
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