Year |
Citation |
Score |
2020 |
Plachinda P, Hopkins M, Rouvimov S, Solanki R. Topological Insulator $$\hbox {Bi}_{2}\hbox {Se}_{3}$$Bi2Se3 Films on Silicon Substrates Journal of Electronic Materials. 49: 2191-2196. DOI: 10.1007/S11664-019-07899-9 |
0.745 |
|
2018 |
Browning R, Plachinda P, Solanki R. Carrier conductance in 2D WSe2 films Semiconductor Science and Technology. 33: 105005. DOI: 10.1088/1361-6641/Aaddec |
0.739 |
|
2017 |
Browning R, Kuperman N, Moon B, Solanki R. Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure Electronics. 6: 27. DOI: 10.3390/Electronics6020027 |
0.371 |
|
2017 |
Kuperman N, Padigi P, Goncher G, Evans D, Thiebes J, Solanki R. High Performance Prussian Blue Cathode for Nonaqueous Ca-ion Intercalation Battery Journal of Power Sources. 342: 414-418. DOI: 10.1016/J.Jpowsour.2016.12.074 |
0.744 |
|
2016 |
Browning R, Plachinda P, Padigi P, Solanki R, Rouvimov S. Growth of multiple WS2/SnS layered semiconductor heterojunctions. Nanoscale. PMID 26726993 DOI: 10.1039/C5Nr08006A |
0.718 |
|
2016 |
Padigi P, Kuperman N, Thiebes JJ, Goncher G, Evans D, Solanki R. Calcium Cobalt Hexacyanoferrate Cathodes for Rechargeable Divalent Ion Batteries Journal of New Materials For Electrochemical Systems. 19: 57-64. DOI: 10.14447/Jnmes.V19I2.231 |
0.739 |
|
2016 |
Browning R, Kuperman N, Solanki R, Kanzyuba V, Rouvimov S. Large area growth of layered WSe2 films Semiconductor Science and Technology. 31: 95002. DOI: 10.1088/0268-1242/31/9/095002 |
0.409 |
|
2015 |
Padigi P, Goncher G, Evans D, Solanki R. Potassium barium hexacyanoferrate – A potential cathode material for rechargeable calcium ion batteries Journal of Power Sources. 273: 460-464. DOI: 10.1016/J.Jpowsour.2014.09.101 |
0.322 |
|
2015 |
Padigi P, Thiebes J, Swan M, Goncher G, Evans D, Solanki R. Prussian green: A high rate capacity cathode for potassium ion batteries Electrochimica Acta. 166: 32-39. DOI: 10.1016/J.Electacta.2015.03.084 |
0.734 |
|
2013 |
Plachinda P, Evans D, Solanki R. Electrical conductivity of PFPA functionalized graphene Solid-State Electronics. 79: 262-267. DOI: 10.1016/J.Sse.2012.08.009 |
0.71 |
|
2012 |
Plachinda P, Solanki R, Evans D. Engineering of graphene band structure by haptic functionalization Materials Research Society Symposium Proceedings. 1407: 109-114. DOI: 10.1557/Opl.2012.711 |
0.696 |
|
2012 |
Plachinda P, Evans D, Solanki R. Thermal conductivity of graphene nanoribbons: Effect of the edges and ribbon width Journal of Heat Transfer. 134. DOI: 10.1115/1.4006297 |
0.693 |
|
2012 |
Whited AM, Singh KV, Evans D, Solanki R. An Electronic Sensor for Detection of Early-Stage Biomarker/s for Ovarian Cancer Bionanoscience. 2: 161-170. DOI: 10.1007/S12668-012-0049-2 |
0.753 |
|
2011 |
Singh KV, Bhura DK, Nandamuri G, Whited AM, Evans D, King J, Solanki R. Nanoparticle-enhanced sensitivity of a nanogap-interdigitated electrode array impedimetric biosensor. Langmuir : the Acs Journal of Surfaces and Colloids. 27: 13931-9. PMID 21942636 DOI: 10.1021/La202546A |
0.76 |
|
2011 |
Plachinda P, Evans DR, Solanki R. Electronic properties of metal-arene functionalized graphene. The Journal of Chemical Physics. 135: 044103. PMID 21806086 DOI: 10.1063/1.3613649 |
0.703 |
|
2011 |
Liu LH, Nandamuri G, Solanki R, Yan M. Electrical properties of covalently immobilized single-layer graphene devices. Journal of Nanoscience and Nanotechnology. 11: 1288-92. PMID 21456173 DOI: 10.1166/Jnn.2011.3886 |
0.356 |
|
2011 |
Plachinda P, Evans D, Solanki R. Modification of graphene band structure by haptic functionalization Proceedings of the Ieee Conference On Nanotechnology. 1187-1192. DOI: 10.1109/NANO.2011.6144327 |
0.683 |
|
2011 |
Plachinda P, Rouvimov S, Solanki R, Langworthy K. HRTEM Contrast Analysis for Structure Characterization of Graphene Films Grown by CVD Microscopy and Microanalysis. 17: 1436-1437. DOI: 10.1017/S1431927611008051 |
0.736 |
|
2011 |
Plachinda P, Rouvimov S, Solanki R. Structure analysis of CVD graphene films based on HRTEM contrast simulations Physica Status Solidi (a) Applications and Materials Science. 208: 2681-2687. DOI: 10.1002/Pssa.201127067 |
0.737 |
|
2010 |
Liu LH, Zorn G, Castner DG, Solanki R, Lerner MM, Yan M. A simple and scalable route to wafer-size patterned graphene. Journal of Materials Chemistry. 20: 5041-5046. PMID 24155570 DOI: 10.1039/C0Jm00509F |
0.357 |
|
2010 |
Singh KV, Whited AM, Ragineni Y, Barrett TW, King J, Solanki R. 3D nanogap interdigitated electrode array biosensors. Analytical and Bioanalytical Chemistry. 397: 1493-502. PMID 20419506 DOI: 10.1007/S00216-010-3682-Z |
0.763 |
|
2010 |
Whited AM, Singh KV, Solanki R, Evans DR. Label-free electrochemical impedance detection of ovarian cancer markers CA-125 and CEA Materials Research Society Symposium Proceedings. 1236: 108-114. DOI: 10.1557/Proc-1236-Ss05-09 |
0.756 |
|
2010 |
Nandamuri G, Roumimov S, Solanki R. Chemical vapor deposition of graphene films Nanotechnology. 21. DOI: 10.1088/0957-4484/21/14/145604 |
0.412 |
|
2010 |
Nandamuri G, Roumimov S, Solanki R. Remote plasma assisted growth of graphene films Applied Physics Letters. 96. DOI: 10.1063/1.3387812 |
0.404 |
|
2010 |
Plachinda P, Rouvimov S, Nandamuri G, Solanki R, Langworthy K. Atomic and Electronic Structure of Graphene Based on HRTEM and Ab-Initio Calculations Microscopy and Microanalysis. 16: 1822-1823. DOI: 10.1017/S1431927610061751 |
0.696 |
|
2008 |
Qi C, Rangineni Y, Goncher G, Solanki R, Langworthy K, Jordan J. SiGe nanowire field effect transistors. Journal of Nanoscience and Nanotechnology. 8: 457-60. PMID 18468103 DOI: 10.1166/Jnn.2008.083 |
0.302 |
|
2008 |
Goncher G, Noice L, Solanki R. Bulk heterojunction organic-inorganic photovoltaic cells based on doped silicon nanowires Journal of Experimental Nanoscience. 3: 77-86. DOI: 10.1080/17458080701883715 |
0.303 |
|
2005 |
Dong L, Bush J, Chirayos V, Solanki R, Jiao J, Ono Y, Conley JF, Ulrich BD. Dielectrophoretically controlled fabrication of single-crystal nickel silicide nanowire interconnects. Nano Letters. 5: 2112-5. PMID 16218748 DOI: 10.1021/Nl051650+ |
0.305 |
|
2005 |
Huo J, Solanki R, McAndrew J. A novel electroplanarization system for replacement of CMP Electrochemical and Solid-State Letters. 8. DOI: 10.1149/1.1848292 |
0.765 |
|
2004 |
Huo J, Solanki R, McAndrew J. Electrochemical planarization of patterned copper films for microelectronic applications Journal of Materials Engineering and Performance. 13: 413-420. DOI: 10.1361/10599490419964 |
0.362 |
|
2004 |
He W, Schuetz S, Solanki R, Belot J, McAndrew J. Atomic Layer Deposition of Lanthanum Oxide Films for High-κ Gate Dielectrics Electrochemical and Solid State Letters. 7. DOI: 10.1149/1.1724824 |
0.633 |
|
2004 |
Decker CA, Solanki R, Freeouf JL, Carruthers JR, Evans DR. Directed growth of nickel silicide nanowires Applied Physics Letters. 84: 1389-1391. DOI: 10.1063/1.1650877 |
0.352 |
|
2004 |
Conley JF, Ono Y, Tweet DJ, Solanki R. Pulsed deposition of metal–oxide thin films using dual metal precursors Applied Physics Letters. 84: 398-400. DOI: 10.1063/1.1643545 |
0.401 |
|
2004 |
Huo J, Solanki R, McAndrew J. Study of anodic layers and their effects on electropolishing of bulk and electroplated films of copper Journal of Applied Electrochemistry. 34: 305-314. DOI: 10.1023/B:Jach.0000015621.31360.14 |
0.777 |
|
2003 |
Conley JF, Ono Y, Solanki R, Tweet DJ. Thin HfO 2 Films Deposited via Alternating Pulses of Hf(NO 3 ) 4 and HfCl 4 Mrs Proceedings. 765. DOI: 10.1557/Proc-765-D3.7 |
0.364 |
|
2003 |
Kisdarjono H, Voutsas AT, Solanki R. Three-dimensional simulation of rapid melting and resolidification of thin Si films by excimer laser annealing Journal of Applied Physics. 94: 4374-4381. DOI: 10.1063/1.1609034 |
0.726 |
|
2003 |
He W, Solanki R, Conley JF, Ono Y. Pulsed deposition of silicate films Journal of Applied Physics. 94: 3657-3659. DOI: 10.1063/1.1599976 |
0.406 |
|
2003 |
Conley JF, Ono Y, Solanki R, Stecker G, Zhuang W. Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O Applied Physics Letters. 82: 3508-3510. DOI: 10.1063/1.1575934 |
0.397 |
|
2003 |
Conley JF, Ono Y, Tweet DJ, Zhuang W, Solanki R. Atomic layer deposition of thin hafnium oxide films using a carbon free precursor Journal of Applied Physics. 93: 712-718. DOI: 10.1063/1.1528306 |
0.403 |
|
2002 |
Conley JF, Ono Y, Tweet DJ, Zhuang W, Solanki R. Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor Mrs Proceedings. 716. DOI: 10.1557/Proc-716-B2.2 |
0.408 |
|
2002 |
Huo J, Solanki R, McAndrew J. Characteristics of copper films produced via atomic layer deposition Journal of Materials Research. 17: 2394-2398. DOI: 10.1557/Jmr.2002.0350 |
0.785 |
|
2002 |
Conley JF, Ono Y, Zhuang W, Tweet DJ, Gao W, Mohammed SK, Solanki R. Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate Electrochemical and Solid State Letters. 5. DOI: 10.1149/1.1462875 |
0.393 |
|
2002 |
Solanki R, Huo J, Freeouf JL, Miner B. Atomic layer deposition of ZnSe/CdSe superlattice nanowires Applied Physics Letters. 81: 3864-3866. DOI: 10.1063/1.1521570 |
0.301 |
|
2002 |
Kang AY, Lenahan PM, Conley JF, Solanki R. Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si Applied Physics Letters. 81: 1128-1130. DOI: 10.1063/1.1494123 |
0.306 |
|
2001 |
Zhang H, Solanki R. Atomic Layer Deposition of High Dielectric Constant Nanolaminates Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1355690 |
0.343 |
|
2000 |
Solanki R, Pathangey B. Atomic layer deposition of copper seed layers Electrochemical and Solid-State Letters. 3: 479-480. DOI: 10.1149/1.1391185 |
0.413 |
|
2000 |
Zhang H, Solanki R, Roberds B, Bai G, Banerjee I. High permittivity thin film nanolaminates Journal of Applied Physics. 87: 1921-1924. DOI: 10.1063/1.372113 |
0.403 |
|
1999 |
Voutsas AT, Marmorstein AM, Solanki R. Impact of annealing ambient on the performance of excimer-laser-annealed polysilicon thin-film transistors Journal of the Electrochemical Society. 146: 3500-3505. DOI: 10.1149/1.1392504 |
0.386 |
|
1999 |
Marmorstein AM, Voutsas AT, Solanki R. Effect of multiple scans and granular defects on excimer laser annealed polysilicon TFTs Solid-State Electronics. 43: 305-313. DOI: 10.1016/S0038-1101(98)00249-4 |
0.349 |
|
1998 |
Voutsas AT, Marmorstein A, Solanki R. Co-Optimization of Si Thin-Film Deposition and Excimer Laser Anneal Processes for Fabrication of High-Performance p-Si TFTs Mrs Proceedings. 508. DOI: 10.1557/Proc-508-67 |
0.363 |
|
1997 |
Marmorstein A, Voutsas AT, Solanki R. A systematic study and optimization of parameters affecting grain size and surface roughness in excimer laser annealed polysilicon thin films Journal of Applied Physics. 82: 4303-4309. DOI: 10.1063/1.366238 |
0.354 |
|
1994 |
Kong W, Solanki R. Effect of ultraviolet radiation on a ZnS:Tb thin film electroluminescent device Journal of Applied Physics. 75: 3311-3315. DOI: 10.1063/1.356139 |
0.31 |
|
1994 |
Kong W, Fogarty J, Solanki R. Atomic layer epitaxy of ZnS:Tb thin film electroluminescent devices Applied Physics Letters. 65: 670-672. DOI: 10.1063/1.112263 |
0.328 |
|
1990 |
Malik F, Solanki R. Planarization of dielectrics used in the manufacture of very-large-scale integrated circuits Thin Solid Films. 193: 1030-1037. DOI: 10.1016/0040-6090(90)90259-G |
0.322 |
|
1990 |
Sudarsan U, Cody NW, Dosluoglu T, Solanki R. Excimer laser assisted selective epitaxy of GaP Applied Physics a Solids and Surfaces. 50: 325-330. DOI: 10.1007/Bf00324501 |
0.355 |
|
1989 |
Cody NW, Sudarsan U, Solanki R. Ultraviolet photon-assisted heteroepitaxy of CdTe and Hg 1-xCdxTe on GaAs/Si substrates Journal of Applied Physics. 66: 449-452. DOI: 10.1063/1.343847 |
0.304 |
|
1989 |
Cody NW, Sudarsan U, Solanki R. Low-temperature cadmium telluride homoepitaxy at high growth rates Journal of Applied Physics. 65: 1932-1935. DOI: 10.1063/1.342880 |
0.328 |
|
1989 |
Sudarsan U, Cody NW, Dosluoglu T, Solanki R. Ultraviolet laser-induced low-temperature epitaxy of GaP Applied Physics Letters. 55: 738-740. DOI: 10.1063/1.101791 |
0.309 |
|
1989 |
Sudarsan U, Cody NW, Solanki R. Laser-induced selective etching of YBa2Cu3O7-x films Journal of Materials Science Letters. 8: 501-502. DOI: 10.1007/Bf00720275 |
0.355 |
|
1988 |
Sudarsan U, Cody NW, Dosluoglu T, Solanki R. Argon Ion and Excimer Laser Induced Epitaxy of GaP Mrs Proceedings. 129. DOI: 10.1557/Proc-129-177 |
0.317 |
|
1988 |
Cody NW, Sudarsan U, Solanki R. Ultraviolet photon-induced heteroepitaxy of CdTe on GaAs Journal of Materials Research. 3: 1144-1150. DOI: 10.1557/Jmr.1988.1144 |
0.318 |
|
1988 |
Kovall GA, Matthews JC, Solanki R. Mercury lamp induced molybdenum deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2353-2355. DOI: 10.1116/1.575589 |
0.397 |
|
1988 |
Cody NW, Sudarsan U, Solanki R. Rapid thermal anneal of sprayed Y1Ba2Cu 3O7-x slurry Applied Physics Letters. 52: 1531-1533. DOI: 10.1063/1.99699 |
0.309 |
|
1988 |
Solanki R, Sudarsan U, Johnson JC. Laser-induced homoepitaxy of GaP Applied Physics Letters. 52: 919-921. DOI: 10.1063/1.99273 |
0.313 |
|
1986 |
Kovall GA, Matthews JC, Solanki R. UV Photon-Assisted Refractory Metal Deposition Mrs Proceedings. 75. DOI: 10.1557/Proc-75-145 |
0.388 |
|
1985 |
Sritharan S, Solanki R, Collins GJ, Fukumoto J, Szluk N, Ellsworth D. Latchup Free Lateral Cmos on Laser Recrystallized Silicon Mrs Proceedings. 53: 407. DOI: 10.1557/Proc-53-407 |
0.551 |
|
1984 |
Hsu LS, Solanki R, Collins GJ, She CY. Raman study of structural transformations of titania coatings induced by laser annealing Applied Physics Letters. 45: 1065-1067. DOI: 10.1063/1.95070 |
0.571 |
|
1983 |
Boyer PK, Moore CA, Solanki R, Ritchie WK, Collins GJ. Microelectronic Thin Film Deposition by UV Laser Photolysis The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1983.A-4-1 |
0.622 |
|
1983 |
Solanki R, Ritchie WH, Collins GJ. Photodeposition of aluminum oxide and aluminum thin films Applied Physics Letters. 43: 454-456. DOI: 10.1063/1.94386 |
0.63 |
|
1983 |
Solanki R, Collins GJ. Laser induced deposition of zinc oxide Applied Physics Letters. 42: 662-663. DOI: 10.1063/1.94064 |
0.617 |
|
1982 |
Boyer PK, Moore CA, Solanki R, Ritchie WK, Roche GA, Collins GJ. Laser Photolytic Deposition of Thin Films Mrs Proceedings. 17: 119. DOI: 10.1557/Proc-17-119 |
0.64 |
|
1982 |
Solanki R, Boyer PK, Collins GJ. Low-temperature refractory metal film deposition Applied Physics Letters. 41: 1048-1050. DOI: 10.1063/1.93389 |
0.627 |
|
1981 |
Solanki R, Boyer PK, Mahan JE, Collins GJ. Laser photodeposition of refractory metals Applied Physics Letters. 38: 572-574. DOI: 10.1063/1.92417 |
0.58 |
|
1980 |
Gerstenberger DC, Solanki R, Collins GJ. Hollow Cathode Metal Ion Lasers Ieee Journal of Quantum Electronics. 16: 820-834. DOI: 10.1109/Jqe.1980.1070578 |
0.576 |
|
1980 |
Solanki R, Fairbank WM, Collins GJ. MULTIWATT OPERATION OF Cu II AND Ag II HOLLOW CATHODE LASERS. Ieee Journal of Quantum Electronics. 1292-1294. DOI: 10.1109/Jqe.1980.1070414 |
0.557 |
|
1979 |
Solanki R, Collins GJ, Fairbank WM. IR Laser Transition in a Nickel Hollow Cathode Discharge Ieee Journal of Quantum Electronics. 15: 525. DOI: 10.1109/Jqe.1979.1070039 |
0.559 |
|
1979 |
Solanki R, Latush EL, Gerstenberger FDC, Fairbank WM, Collins GJ. Hollow-cathode excitation of ion laser transitions in noble-gas mixtures Applied Physics Letters. 35: 317-319. DOI: 10.1063/1.91123 |
0.568 |
|
1979 |
Solanki R, Latush EL, Fairbank WM, Collins GJ. New infrared laser transitions in copper and silver hollow cathode discharge Applied Physics Letters. 34: 568-570. DOI: 10.1063/1.90869 |
0.57 |
|
1979 |
Latush EL, Solanki R, Collins GJ. CW strontium ion laser transitions in the infrared Physics Letters A. 73: 387-388. DOI: 10.1016/0375-9601(79)90093-8 |
0.565 |
|
1978 |
Warner B, Gerstenberger D, Reid R, McNeil J, Solanki R, Persson K, Collins G. 1 W operation of singly ionized silver and copper lasers Ieee Journal of Quantum Electronics. 14: 568-570. DOI: 10.1109/Jqe.1978.1069855 |
0.552 |
|
Show low-probability matches. |