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Michael Kozicki - Publications

Affiliations: 
Electrical Engineering Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering
Website:
https://search.asu.edu/profile/57492
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92 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Huang X, Fang R, Yang C, Fu K, Fu H, Chen H, Yang T, Zhou J, Montes J, Kozicki MN, Barnaby H, Zhang B, Zhao Y. Steep-Slope Field-Effect Transistors with AlGaN/GaN HEMT and Oxide based Threshold Switching Device. Nanotechnology. PMID 30721888 DOI: 10.1088/1361-6528/Ab0484  0.43
2019 Bartlett P, Berg AI, Bernasconi M, Brown S, Burr G, Foroutan-Nejad C, Gale E, Huang R, Ielmini D, Kissling G, Kolosov V, Kozicki M, Nakamura H, Rushchanskii K, Salinga M, et al. Phase-change memories (PCM) - Experiments and modelling: general discussion. Faraday Discussions. PMID 30697618 DOI: 10.1039/C8Fd90064G  0.36
2019 Ambrosi E, Bartlett P, Berg AI, Brivio S, Burr G, Deswal S, Deuermeier J, Haga MA, Kiazadeh A, Kissling G, Kozicki M, Foroutan-Nejad C, Gale E, Gonzalez-Velo Y, Goossens A, et al. Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion. Faraday Discussions. PMID 30663725 DOI: 10.1039/C8Fd90059K  0.337
2019 Taggart JL, Jacobs-Gedrim RB, McLain ML, Barnaby HJ, Bielejec ES, Hardy W, Marinella MJ, Kozicki MN, Holbert K. Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects Ieee Transactions On Nuclear Science. 66: 69-76. DOI: 10.1109/Tns.2018.2882529  0.303
2019 Subedi KN, Prasai K, Kozicki MN, Drabold DA. Structural origins of electronic conduction in amorphous copper-doped alumina Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.065605  0.487
2018 Gonzalez-Velo Y, Patadia A, Barnaby HJ, Kozicki MN. Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability. Faraday Discussions. PMID 30417185 DOI: 10.1039/C8Fd00125A  0.332
2018 Taggart JL, Chen W, Gonzalez-Velo Y, Barnaby HJ, Holbert K, Kozicki MN. In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment Ieee Transactions On Nuclear Science. 65: 192-199. DOI: 10.1109/Tns.2017.2779860  0.344
2018 Fang R, Livingston I, Esqueda IS, Kozicki M, Barnaby H. Bias temperature instability model using dynamic defect potential for predicting CMOS aging Journal of Applied Physics. 123: 225701. DOI: 10.1063/1.5027856  0.371
2017 Chen W, Fang R, Barnaby HJ, Balaban MB, Gonzalez-Velo Y, Taggart JL, Mahmud A, Holbert K, Edwards AH, Kozicki MN. Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors Ieee Transactions On Nuclear Science. 64: 269-276. DOI: 10.1109/Tns.2016.2618359  0.481
2017 Chen W, Chamele N, Gonzalez-Velo Y, Barnaby HJ, Kozicki MN. Low-Temperature Characterization of Cu–Cu:Silica-Based Programmable Metallization Cell Ieee Electron Device Letters. 38: 1244-1247. DOI: 10.1109/Led.2017.2734743  0.314
2017 Chen W, Tappertzhofen S, Barnaby HJ, Kozicki MN. SiO2 based conductive bridging random access memory Journal of Electroceramics. 39: 109-131. DOI: 10.1007/S10832-017-0070-5  0.494
2016 Chen W, Fang R, Balaban MB, Yu W, Gonzalez-Velo Y, Barnaby HJ, Kozicki MN. A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells. Nanotechnology. 27: 255202. PMID 27171505 DOI: 10.1088/0957-4484/27/25/255202  0.374
2016 Gonzalez-Velo Y, Mahmud A, Chen W, Taggart JL, Barnaby HJ, Kozicki MN, Ailavajhala M, Holbert KE, Mitkova M. Radiation hardening by process of CBRAM resistance switching cells Ieee Transactions On Nuclear Science. 63: 2145-2151. DOI: 10.1109/Tns.2016.2569076  0.386
2016 Chen W, Barnaby HJ, Kozicki MN. Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer Ieee Electron Device Letters. 37: 576-579. DOI: 10.1109/Led.2016.2542239  0.371
2016 Chen W, Barnaby HJ, Kozicki MN. Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells Ieee Electron Device Letters. 37: 580-583. DOI: 10.1109/Led.2016.2540361  0.316
2016 Mahalanabis D, Sivaraj M, Chen W, Shah S, Barnaby HJ, Kozicki MN, Christen JB, Vrudhula S. Demonstration of spike timing dependent plasticity in CBRAM devices with silicon neurons Proceedings - Ieee International Symposium On Circuits and Systems. 2016: 2314-2317. DOI: 10.1109/ISCAS.2016.7539047  0.327
2015 Saremi M, Barnaby HJ, Edwards A, Kozicki MN. Analytical relationship between anion formation and carrier-trap statistics in chalcogenide glass films Ecs Electrochemistry Letters. 4: H29-H31. DOI: 10.1149/2.0061507Eel  0.313
2015 Chen W, Barnaby HJ, Kozicki MN, Edwards AH, Gonzalez-Velo Y, Fang R, Holbert KE, Yu S, Yu W. A Study of Gamma-Ray Exposure of Cu–SiO 2 Programmable Metallization Cells Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2478883  0.347
2015 Mahalanabis D, Liu R, Barnaby HJ, Yu S, Kozicki MN, Mahmud A, Deionno E. Single Event Susceptibility Analysis in CBRAM Resistive Memory Arrays Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2478382  0.333
2015 Mahalanabis D, Bharadwaj V, Barnaby HJ, Vrudhula S, Kozicki MN. A nonvolatile sense amplifier flip-flop using programmable metallization cells Ieee Journal On Emerging and Selected Topics in Circuits and Systems. 5: 205-213. DOI: 10.1109/Jetcas.2015.2433571  0.415
2015 Orava J, Kozicki MN, Yannopoulos SN, Greer AL. Reversible migration of silver on memorized pathways in Ag-Ge40S60 films Aip Advances. 5. DOI: 10.1063/1.4927006  0.315
2015 Rajabi S, Saremi M, Barnaby HJ, Edwards A, Kozicki MN, Mitkova M, Mahalanabis D, Gonzalez-Velo Y, Mahmud A. Static impedance behavior of programmable metallization cells Solid-State Electronics. 106: 27-33. DOI: 10.1016/J.Sse.2014.12.019  0.451
2014 Saremi M, Rajabi S, Barnaby HJ, Kozicki MN. The effects of process variation on the parametric model of the static impedance behavior of programmable metallization cell (PMC) Materials Research Society Symposium Proceedings. 1692. DOI: 10.1557/Opl.2014.521  0.43
2014 Dandamudi P, Mahmud A, Gonzalez-Velo Y, Kozicki MN, Barnaby HJ, Roos B, Alford TL, Ailavajhala M, Mitkova M, Holbert KE. Flexible sensors based on radiation-induced diffusion of ag in chalcogenide glass Ieee Transactions On Nuclear Science. 61: 3432-3437. DOI: 10.1109/Tns.2014.2364140  0.775
2014 Taggart JL, Gonzalez-Velo Y, Mahalanabis D, Mahmud A, Barnaby HJ, Kozicki MN, Holbert KE, Mitkova M, Wolf K, Deionno E, White AL. Ionizing radiation effects on nonvolatile memory properties of programmable metallization cells Ieee Transactions On Nuclear Science. 61: 2985-2990. DOI: 10.1109/Tns.2014.2362126  0.378
2014 Mahalanabis D, Barnaby HJ, Kozicki MN, Bharadwaj V, Rajabi S. Investigation of single event induced soft errors in programmable metallization cell memory Ieee Transactions On Nuclear Science. 61: 3557-3563. DOI: 10.1109/Tns.2014.2358235  0.461
2014 Dandamudi P, Kozicki MN, Barnaby HJ, Gonzalez-Velo Y, Holbert KE. Total ionizing dose tolerance of Ag - Ge40S60 based programmable metallization cells Ieee Transactions On Nuclear Science. 61: 1726-1731. DOI: 10.1109/Tns.2014.2304634  0.836
2014 Mahalanabis D, Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Dandamudi P, Vrudhula S. Impedance measurement and characterization of Ag-Ge30Se70-based programmable metallization cells Ieee Transactions On Electron Devices. 61: 3723-3730. DOI: 10.1109/Ted.2014.2358573  0.814
2014 Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Gopalan C, Holbert K. Total ionizing dose retention capability of conductive bridging random access memory Ieee Electron Device Letters. 35: 205-207. DOI: 10.1109/Led.2013.2295801  0.69
2014 Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Holbert K. Total-ionizing-dose effects on the impedance of silverdoped chalcogenide programmable metallization cells Ieee Aerospace Conference Proceedings. DOI: 10.1109/AERO.2014.6836470  0.495
2014 Fang R, Gonzalez Velo Y, Chen W, Holbert KE, Kozicki MN, Barnaby H, Yu S. Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory Applied Physics Letters. 104. DOI: 10.1063/1.4875748  0.363
2014 Mahalanabis D, Barnaby HJ, Gonzalez-Velo Y, Kozicki MN, Vrudhula S, Dandamudi P. Incremental resistance programming of programmable metallization cells for use as electronic synapses Solid-State Electronics. 100: 39-44. DOI: 10.1016/J.Sse.2014.07.002  0.818
2013 Kozicki MN, Dandamudi P, Barnaby HJ, Gonzalez-Velo Y. Programmable metallization cells in memory and switching applications Ecs Transactions. 58: 47-52. DOI: 10.1149/05805.0047ecst  0.828
2013 Gonzalez-Velo Y, Barnaby HJ, Kozicki MN, Dandamudi P, Chandran A, Holbert KE, Mitkova M, Ailavajhala M. Total-ionizing-dose effects on the resistance switching characteristics of chalcogenide programmable metallization cells Ieee Transactions On Nuclear Science. 60: 4563-4569. DOI: 10.1109/Tns.2013.2286318  0.829
2013 Dandamudi P, Kozicki MN, Barnaby HJ, Gonzalez-Velo Y, Mitkova M, Holbert KE, Ailavajhala M, Yu W. Sensors based on radiation-induced diffusion of silver in Germanium selenide glasses Ieee Transactions On Nuclear Science. 60: 4257-4264. DOI: 10.1109/Tns.2013.2285343  0.802
2013 Dandamudi P, Barnaby HJ, Kozicki MN, Gonzalez-Velo Y, Holbert KE. Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. DOI: 10.1109/RADECS.2013.6937426  0.836
2013 Jameson JR, Blanchard P, Cheng C, Dinh J, Gallo A, Gopalakrishnan V, Gopalan C, Guichet B, Hsu S, Kamalanathan D, Kim D, Koushan F, Kwan M, Law K, Lewis D, ... ... Kozicki MN, et al. Conductive-bridge memory (CBRAM) with excellent high-temperature retention Technical Digest - International Electron Devices Meeting, Iedm. 30.1.1-30.1.4. DOI: 10.1109/IEDM.2013.6724721  0.778
2013 Barnaby H, Edwards A, Oleksy D, Kozicki M. Finite element modeling of ag transport and reactions in chalcogenide glass resistive memory Ieee Aerospace Conference Proceedings. DOI: 10.1109/AERO.2013.6497392  0.406
2013 Valov I, Kozicki MN. Cation-based resistance change memory Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/7/074005  0.455
2012 Lu W, Jeong DS, Kozicki M, Waser R. Electrochemical metallization cells-blending nanoionics into nanoelectronics? Mrs Bulletin. 37: 124-130. DOI: 10.1557/Mrs.2012.5  0.545
2012 Gonzalez-Velo Y, Barnaby HJ, Chandran A, Oleksy DR, Dandamudi P, Kozicki MN, Holbert KE, Mitkova M, Ailavajhala M, Chen P. Effects of cobalt-60 gamma-rays on Ge-Se chalcogenide glasses and Ag/Ge-Se test structures Ieee Transactions On Nuclear Science. 59: 3093-3100. DOI: 10.1109/Tns.2012.2224137  0.798
2012 Jameson JR, Gilbert N, Koushan F, Saenz J, Wang J, Hollmer S, Kozicki M, Derhacobian N. Quantized conductance in Ag/GeS 2/W conductive-bridge memory cells Ieee Electron Device Letters. 33: 257-259. DOI: 10.1109/Led.2011.2177803  0.434
2012 Jameson JR, Gilbert N, Koushan F, Saenz J, Wang J, Hollmer S, Kozicki M. Effects of cooperative ionic motion on programming kinetics of conductive-bridge memory cells Applied Physics Letters. 100. DOI: 10.1063/1.3675870  0.405
2011 Kamalanathan D, Akhavan A, Kozicki MN. Low voltage cycling of programmable metallization cell memory devices. Nanotechnology. 22: 254017. PMID 21572195 DOI: 10.1088/0957-4484/22/25/254017  0.815
2011 Valov I, Waser R, Jameson JR, Kozicki MN. Electrochemical metallization memories--fundamentals, applications, prospects. Nanotechnology. 22: 254003. PMID 21572191 DOI: 10.1088/0957-4484/22/28/289502  0.476
2011 Kozicki MN. Cation-based resistive memory Proceedings - International Nanoelectronics Conference, Inec. DOI: 10.1109/INEC.2011.5991737  0.473
2011 Valov I, Waser R, Jameson JR, Kozicki MN. Electrochemical metallization memories - Fundamentals, applications, prospects Nanotechnology. 22. DOI: 10.1088/0957-4484/22/25/254003  0.375
2011 Baliga SR, Ren M, Kozicki MN. Self-healing interconnects for flexible electronics applications Thin Solid Films. 519: 2339-2343. DOI: 10.1016/J.Tsf.2010.10.064  0.581
2011 Puthentheradam SC, Schroder DK, Kozicki MN. Inherent diode isolation in programmable metallization cell resistive memory elements Applied Physics a: Materials Science and Processing. 102: 817-826. DOI: 10.1007/s00339-011-6292-5  0.344
2010 Derhacobian N, Hollmer SC, Gilbert N, Kozicki MN. Power and energy perspectives of nonvolatile memory technologies Proceedings of the Ieee. 98: 283-298. DOI: 10.1109/JPROC.2009.2035147  0.317
2009 Russo U, Kamalanathan D, Ielmini D, Lacaita AL, Kozicki MN. Study of multilevel programming in Programmable Metallization Cell (PMC) memory Ieee Transactions On Electron Devices. 56: 1040-1047. DOI: 10.1109/TED.2009.2016019  0.817
2009 Kamalanathan D, Russo U, Ielmini D, Kozicki MN. Voltage-driven on-off transition and tradeoff with program and erase current in Programmable Metallization Cell (PMC) memory Ieee Electron Device Letters. 30: 553-555. DOI: 10.1109/LED.2009.2016991  0.814
2008 Kozicki MN. Ionic memory - materials and device characteristics International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 897-900. DOI: 10.1109/ICSICT.2008.4734690  0.518
2008 Schindler C, Weides M, Kozicki MN, Waser R. Low current resistive switching in Cu-SiO2 cells Applied Physics Letters. 92. DOI: 10.1063/1.2903707  0.424
2007 Schindler C, Thermadam SCP, Waser R, Kozicki MN. Bipolar and unipolar resistive switching in cu-doped SiO2 Ieee Transactions On Electron Devices. 54: 2762-2768. DOI: 10.1109/TED.2007.904402  0.436
2007 Gilbert NE, Kozicki MN. An embeddable multilevel-cell solid electrolyte memory array Ieee Journal of Solid-State Circuits. 42: 1383-1391. DOI: 10.1109/JSSC.2007.897172  0.352
2007 Mitkova M, Kozicki MN. Ag-photodoping in Ge-chalcogenide amorphous thin films-Reaction products and their characterization Journal of Physics and Chemistry of Solids. 68: 866-872. DOI: 10.1016/J.Jpcs.2007.01.004  0.318
2007 Gopalan C, Kozicki MN, Bhagat S, Puthen Thermadam SC, Alford TL, Mitkova M. Structure of copper-doped tungsten oxide films for solid-state memory Journal of Non-Crystalline Solids. 353: 1844-1848. DOI: 10.1016/J.Jnoncrysol.2007.02.054  0.64
2007 Kozicki MN. Memory devices based on solid electrolytes Materials Research Society Symposium Proceedings. 997: 165-174.  0.456
2007 Kamalanathan D, Baliga S, Puthen Thermadam SC, Kozicki M. ON state stability of Programmable Metalization Cell (PMC) memory Proceedings - 2007 Non-Volatile Memory Technology Symposium, Nvmts 07. 91-95.  0.809
2007 Schindler C, Meier M, Waser R, Kozicki MN. Resistive switching in Ag-Ge-Se with extremely low write currents Proceedings - 2007 Non-Volatile Memory Technology Symposium, Nvmts 07. 82-85.  0.435
2007 Baliga SR, Puthen Thermadam SC, Kamalanathan D, Allee DR, Kozicki MN. Solid electrolyte memory for flexible electronics Proceedings - 2007 Non-Volatile Memory Technology Symposium, Nvmts 07. 86-90.  0.822
2006 Kozicki MN, Gopalan C, Balakrishnan M, Mitkova M. A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte Ieee Transactions On Nanotechnology. 5: 535-544. DOI: 10.1109/Tnano.2006.880407  0.611
2006 Kozicki MN, Mitkova M. Mass transport in chalcogenide electrolyte films - materials and applications Journal of Non-Crystalline Solids. 352: 567-577. DOI: 10.1016/j.jnoncrysol.2005.11.065  0.312
2006 Balakrishnan M, Thermadam SCP, Mitkova M, Kozicki MN. A low power non-volatile memory element based on copper in deposited silicon oxide 7th Annual Non-Volatile Memory Technology Symposium, Nvmts. 104-110.  0.634
2006 Kozicki MN, Ratnakumar C, Mitkova M. Electrodeposit formation in solid electrolytes 7th Annual Non-Volatile Memory Technology Symposium, Nvmts. 111-115.  0.363
2005 Kozicki MN, Park M, Mitkova M. Nanoscale memory elements based on solid-state electrolytes Ieee Transactions On Nanotechnology. 4: 331-338. DOI: 10.1109/TNANO.2005.846936  0.467
2005 Kozicki MN, Balakrishnan M, Gopalan C, Ratnakumar C, Mitkova M. Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes 2005 Non-Volatile Memory Technology Symposium, Nvmts05. 83-89. DOI: 10.1109/NVMT.2005.1541405  0.443
2005 Balakrishnan M, Kozicki MN, Gopalan C, Mitkova M. Germanium sulfide-based solid electrolytes for non-volatile memory Device Research Conference - Conference Digest, Drc. 2005: 47-48. DOI: 10.1109/DRC.2005.1553049  0.509
2005 Gilbert NE, Gopalan C, Kozicki MN. A macro model of programmable metallization cell devices Solid-State Electronics. 49: 1813-1819. DOI: 10.1016/J.Sse.2005.10.019  0.63
2004 Kozicki MN, Gopalan C, Balakrishnan M, Park M, Mitkova M. Non-volatile memory based on solid electrolytes Proceedings 2004 Non-Volatile Memory Technology Symposium, Nvmts 2004. 10-17.  0.459
2003 Chakraborty PS, McCartney MR, Li J, Gopalan C, Gilbert M, Goodnick SM, Thornton TJ, Kozicki MN. Electron holographic characterization of ultra-shallow junctions in Si for nanoscale MOSFETs Ieee Transactions On Nanotechnology. 2: 102-109. DOI: 10.1109/Tnano.2003.812586  0.573
2003 Gopalan C, Chakraborty PS, Yang J, Kim T, Wu Z, McCartney MR, Goodnick SM, Kozicki MN, Thornton TJ. Shallow source/drain extensions for deep submicron MOSFETs using spin-on-dopants Ieee Transactions On Electron Devices. 50: 1277-1283. DOI: 10.1109/Ted.2003.813467  0.566
2003 Kozicki MN, Mitkova M, Aberouette JP. Nanostructure of solid electrolytes and surface electrodeposits Physica E: Low-Dimensional Systems and Nanostructures. 19: 161-166. DOI: 10.1016/S1386-9477(03)00313-8  0.31
2003 Chakraborty PS, McCartney MR, Li J, Gopalan C, Singisetti U, Goodnick SM, Thornton TJ, Kozicki MN. Electron holographic characterization of nanoscale charge distributions for ultra shallow PN junctions in Si Physica E: Low-Dimensional Systems and Nanostructures. 19: 167-172. DOI: 10.1016/S1386-9477(03)00302-3  0.605
2003 Laws GM, Thornton TJ, Yang J, De la Garza L, Kozicki M, Gust D, Gu J, Sorid D. Drain current control in a hybrid molecular/MOSFET device Physica E: Low-Dimensional Systems and Nanostructures. 17: 659-663. DOI: 10.1016/S1386-9477(02)00923-2  0.321
2003 Kozicki MN, Mitkova M, Park M, Balakrishnan M, Gopalan C. Information storage using nanoscale electrodeposition of metal in solid electrolytes Superlattices and Microstructures. 34: 459-465. DOI: 10.1016/J.Spmi.2004.03.042  0.727
2003 Singisetti U, McCartney MR, Li J, Chakraborty PS, Goodnick SM, Kozicki MN, Thornton TJ. Two-dimensional electrical characterization of ultrashallow source/drain extensions for nanoscale MOSFETs Superlattices and Microstructures. 34: 301-310. DOI: 10.1016/J.Spmi.2004.03.020  0.324
2002 Yang J, De La Garza L, Thornton TJ, Kozicki M, Gust D. Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si:SiO2 interface Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1706-1709. DOI: 10.1116/1.1491543  0.366
2002 Yang J, Thornton TJ, Goodnick SM, Kozicki M, Lyding J. Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy Physica B: Condensed Matter. 314: 354-357. DOI: 10.1016/S0921-4526(01)01404-1  0.358
2002 Yang J, Thornton TJ, Kozicki M, De la Garza L, Gust D. Molecular control of the threshold voltage of an NMOS inversion layer Microelectronic Engineering. 63: 135-139. DOI: 10.1016/S0167-9317(02)00634-2  0.348
2002 Mitkova M, Kozicki MN. Silver incorporation in Ge-Se glasses used in programmable metallization cell devices Journal of Non-Crystalline Solids. 299: 1023-1027. DOI: 10.1016/S0022-3093(01)01068-7  0.456
2002 Laws GM, Thornton T, Yang J, Garza LDL, Kozicki M, Gust D. Molecular control of the drain current in a buried channel MOSFET Physica Status Solidi B-Basic Solid State Physics. 233: 83-89. DOI: 10.1002/1521-3951(200209)233:1<83::Aid-Pssb83>3.0.Co;2-#  0.304
2000 Kozicki MN, Yun M, Yang SJ, Aberouette JP, Bird JP. Nanoscale effects in devices based on chalcogenide solid solutions Superlattices and Microstructures. 27: 485-488. DOI: 10.1006/Spmi.2000.0827  0.412
1998 Kamal AHM, Lutzen J, Sanborn BA, Sidorov MV, Kozicki MN, Smith DJ, Ferry DK. Two-terminal nanocrystalline silicon memory device at room temperature Semiconductor Science and Technology. 13: 1328-1332. DOI: 10.1088/0268-1242/13/11/018  0.474
1997 Kamal AHM, Rack MJ, Kozicki MN, Ferry DK, Lützen J, Hallmark JA. Ultrathin cobalt silicide layers formed by rapid thermal processing of metal on amorphous silicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 899-902. DOI: 10.1116/1.589505  0.357
1996 Kozicki M, Allgair J, Jenkins-Gray A, Ferry D, Whidden T. The use of electron beam exposure and chemically enhanced vapor etching of SiO2 for nanoscale fabrication Physica B: Condensed Matter. 227: 318-322. DOI: 10.1016/0921-4526(96)00430-9  0.303
1996 Pan M, Yun M, Kozicki MN, Whidden TK. Self-assembled monolayer resists and nanoscale lithography of silicon dioxide thin films by chemically enhanced vapor etching (CEVE) Superlattices and Microstructures. 20: 368-376. DOI: 10.1006/Spmi.1996.0091  0.318
1991 Kozicki MN, Hsia SW, Owen AE, Ewen PJS. Pass - a chalcogenide-based lithography scheme for I.C. fabrication Journal of Non-Crystalline Solids. 137: 1341-1344. DOI: 10.1016/S0022-3093(05)80372-2  0.321
1989 Kozicki MN, Robertson JM. Silicide Formation on Polycrystalline Silicon by Direct Metal Implantation Journal of the Electrochemical Society. 136: 878-881. DOI: 10.1149/1.2096763  0.317
1989 Henscheid D, Kozicki MN, Sheets GW, Mughal M, Zwiebel I, Graham RJ. Rapid thermal nitridation of thin SiO2 films Journal of Electronic Materials. 18: 99-104. DOI: 10.1007/Bf02657393  0.34
1988 Zhang QZ, Kozicki MN, Schroder DK. The Effects of Nonuniform Oxide Thickness on MOSFET Performance Ieee Transactions On Electron Devices. 35: 1395-1397. DOI: 10.1109/16.2569  0.307
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