| Year |
Citation |
Score |
| 2016 |
Iberi V, Liang L, Ievlev AV, Stanford MG, Lin MW, Li X, Mahjouri-Samani M, Jesse S, Sumpter BG, Kalinin SV, Joy DC, Xiao K, Belianinov A, Ovchinnikova OS. Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams. Scientific Reports. 6: 30481. PMID 27480346 DOI: 10.1038/Srep30481 |
0.328 |
|
| 2016 |
Mahjouri-Samani M, Liang L, Oyedele AD, Kim YS, Tian M, Cross N, Wang K, Lin MW, Boulesbaa A, Rouleau CM, Puretzky AA, Xiao K, Yoon M, Eres G, Duscher G, et al. Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type in Monolayer MoSe2-x Crystals. Nano Letters. PMID 27416103 DOI: 10.1021/Acs.Nanolett.6B02263 |
0.311 |
|
| 2016 |
Wang K, Huang B, Tian M, Ceballos F, Lin MW, Mahjouri-Samani M, Boulesbaa A, Puretzky AA, Rouleau CM, Yoon M, Zhao H, Xiao K, Duscher G, Geohegan DB. Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy. Acs Nano. PMID 27309275 DOI: 10.1021/Acsnano.6B01486 |
0.316 |
|
| 2016 |
Li X, Lin MW, Lin J, Huang B, Puretzky AA, Ma C, Wang K, Zhou W, Pantelides ST, Chi M, Kravchenko I, Fowlkes J, Rouleau CM, Geohegan DB, Xiao K. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy. Science Advances. 2: e1501882. PMID 27152356 DOI: 10.1126/Sciadv.1501882 |
0.363 |
|
| 2016 |
Lin MW, Kravchenko II, Fowlkes J, Li X, Puretzky AA, Rouleau CM, Geohegan DB, Xiao K. Thickness-dependent charge transport in few-layer MoS2 field-effect transistors. Nanotechnology. 27: 165203. PMID 26963583 DOI: 10.1088/0957-4484/27/16/165203 |
0.334 |
|
| 2016 |
Li X, Lin MW, Puretzky AA, Basile L, Wang K, Idrobo JC, Rouleau CM, Geohegan DB, Xiao K. Persistent photoconductivity in two-dimensional Mo1-xWxSe2-MoSe2 van der Waals heterojunctions Journal of Materials Research. 31: 923-930. DOI: 10.1557/Jmr.2016.35 |
0.35 |
|
| 2015 |
Li X, Basile L, Huang B, Ma C, Lee J, Vlassiouk IV, Puretzky AA, Lin MW, Yoon M, Chi M, Idrobo JC, Rouleau CM, Sumpter BG, Geohegan DB, Xiao K. Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene. Acs Nano. PMID 26202730 DOI: 10.1021/Acsnano.5B01943 |
0.359 |
|
| 2015 |
Mahjouri-Samani M, Lin MW, Wang K, Lupini AR, Lee J, Basile L, Boulesbaa A, Rouleau CM, Puretzky AA, Ivanov IN, Xiao K, Yoon M, Geohegan DB. Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors. Nature Communications. 6: 7749. PMID 26198727 DOI: 10.1038/Ncomms8749 |
0.302 |
|
| 2015 |
Boulesbaa A, Huang B, Wang K, Lin MW, Mahjouri-Samani M, Rouleau C, Xiao K, Yoon M, Sumpter B, Puretzky A, Geohegan D. Observation of two distinct negative trions in tungsten disulfide monolayers Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.115443 |
0.307 |
|
| 2014 |
Li X, Lin MW, Puretzky AA, Idrobo JC, Ma C, Chi M, Yoon M, Rouleau CM, Kravchenko II, Geohegan DB, Xiao K. Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse. Scientific Reports. 4: 5497. PMID 24975226 DOI: 10.1038/Srep05497 |
0.313 |
|
| 2013 |
Perera MM, Lin MW, Chuang HJ, Chamlagain BP, Wang C, Tan X, Cheng MM, Tománek D, Zhou Z. Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating. Acs Nano. 7: 4449-58. PMID 23590723 DOI: 10.1021/Nn401053G |
0.449 |
|
| 2011 |
Ling C, Setzler G, Lin MW, Dhindsa KS, Jin J, Yoon HJ, Kim SS, Ming-Cheng Cheng M, Widjaja N, Zhou Z. Electrical transport properties of graphene nanoribbons produced from sonicating graphite in solution. Nanotechnology. 22: 325201. PMID 21757795 DOI: 10.1088/0957-4484/22/32/325201 |
0.458 |
|
| 2011 |
Lin MW, Ling C, Zhang Y, Yoon HJ, Cheng MM, Agapito LA, Kioussis N, Widjaja N, Zhou Z. Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors. Nanotechnology. 22: 265201. PMID 21576804 DOI: 10.1088/0957-4484/22/26/265201 |
0.471 |
|
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