| Year |
Citation |
Score |
| 2020 |
Yumigeta K, Kopas C, Blei M, Hajra D, Shen Y, Trivedi D, Kolari P, Newman N, Tongay S. Low-temperature synthesis of 2D anisotropic MoTe using a high-pressure soft sputtering technique. Nanoscale Advances. 2: 1443-1448. PMID 36132307 DOI: 10.1039/d0na00066c |
0.781 |
|
| 2019 |
Weber ER, Newman N. Pressure dependence of III-V Schottky barriers: A critical test of theories for Fermi level pinning. Physical Review Letters. 73: 581-584. PMID 10057483 DOI: 10.1103/Physrevlett.73.581 |
0.309 |
|
| 2019 |
Zheng JF, Liu X, Newman N, Weber ER, Ogletree DF, Salmeron M. Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs. Physical Review Letters. 72: 1490-1493. PMID 10055622 DOI: 10.1103/Physrevlett.72.1490 |
0.314 |
|
| 2019 |
Walimbe A, Wertheim A, Ravi A, Kopas C, Saxena A, Singh R, Lehner S, Domenico J, Makar J, Carpenter R, Buseck P, Newman N. Influence of substrate temperature on properties of pyrite thin films deposited using a sequential coevaporation technique Thin Solid Films. 669: 49-55. DOI: 10.1016/J.Tsf.2018.10.022 |
0.803 |
|
| 2018 |
Singh RK, Rizzo ND, Boochakravarthy A, Newman N. Large Uniaxial Anisotropy Induced in Soft Ferromagnetic Thin Films by Oblique Deposition of Underlayer Ieee Magnetics Letters. 9: 1-5. DOI: 10.1109/Lmag.2017.2779101 |
0.354 |
|
| 2018 |
Singh RK, Rizzo ND, Bertram M, Zheng K, Newman N. Improvement in the Magnetic Properties of Ni–Fe Thin Films on Thick Nb Electrodes Using Oxidation and Low-Energy Ar Ion Milling Ieee Magnetics Letters. 9: 1-4. DOI: 10.1109/Lmag.2017.2776079 |
0.394 |
|
| 2018 |
Pallecchi I, Tarantini C, Shen Y, Singh RK, Newman N, Cheng P, Jia Y, Wen H, Putti M. Clean to dirty limit andTcsuppression in NdFeAsO0.7F0.3studied byHc2analysis Superconductor Science and Technology. 31: 034007. DOI: 10.1088/1361-6668/Aaaaa6 |
0.332 |
|
| 2018 |
Tarantini C, Iida K, Sumiya N, Chihara M, Hatano T, Ikuta H, Singh RK, Newman N, Larbalestier DC. Effect ofα-particle irradiation on a NdFeAs(O,F) thin film Superconductor Science and Technology. 31: 034002. DOI: 10.1088/1361-6668/Aaa821 |
0.345 |
|
| 2018 |
Devonport A, Vishina A, Singh R, Edwards M, Zheng K, Domenico J, Rizzo N, Kopas C, van Schilfgaarde M, Newman N. Magnetic properties of chromium-doped Ni80Fe20 thin films Journal of Magnetism and Magnetic Materials. 460: 193-202. DOI: 10.1016/J.Jmmm.2018.03.054 |
0.788 |
|
| 2017 |
Sayyadi-Shahraki A, Taheri-Nassaj E, Sharifi H, Gonzales J, Kolodiazhnyi T, Newman N. Origin of dielectric loss in Ba(Co1/3
Nb2/3
)O3
microwave ceramics Journal of the American Ceramic Society. 101: 1665-1676. DOI: 10.1111/Jace.15343 |
0.361 |
|
| 2017 |
Qader MA, Vishina A, Yu L, Garcia C, Singh R, Rizzo N, Huang M, Chamberlin R, Belashchenko K, van Schilfgaarde M, Newman N. The magnetic, electrical and structural properties of copper-permalloy alloys Journal of Magnetism and Magnetic Materials. 442: 45-52. DOI: 10.1016/J.Jmmm.2017.06.081 |
0.586 |
|
| 2016 |
Zhang S, Kopas C, Wagner B, Queen D, Newman N. In-situelectron paramagnetic resonance studies of paramagnetic point defects in superconducting microwave resonators Applied Physics Letters. 109: 122602. DOI: 10.1063/1.4962953 |
0.776 |
|
| 2015 |
Das B, Renaud A, Volosin AM, Yu L, Newman N, Seo DK. Nanoporous delafossite CuAlO2 from inorganic/polymer double gels: a desirable high-surface-area p-type transparent electrode material. Inorganic Chemistry. 54: 1100-8. PMID 25584858 DOI: 10.1021/Ic5023906 |
0.447 |
|
| 2015 |
Zhang S, Devonport A, Newman N. Main Source of Microwave Loss in Transition-Metal-Doped Ba(Zn1/3Ta2/3)O3and Ba(Zn1/3Nb2/3)O3at Cryogenic Temperatures Journal of the American Ceramic Society. 98: 1188-1194. DOI: 10.1111/Jace.13419 |
0.367 |
|
| 2014 |
Vahidi M, Gifford JA, Zhang SK, Krishnamurthy S, Yu ZG, Yu L, Huang M, Youngbull C, Chen TY, Newman N. Fabrication of highly spin-polarized Co2FeAl 0.5Si0.5 thin-films Apl Materials. 2. DOI: 10.1063/1.4869798 |
0.726 |
|
| 2014 |
Abd El Qader M, Singh RK, Galvin SN, Yu L, Rowell JM, Newman N. Erratum: “Switching at small magnetic fields in Josephson junctions fabricated with ferromagnetic barrier layers” [Appl. Phys. Lett. 104, 022602 (2014)] Applied Physics Letters. 104: 099903. DOI: 10.1063/1.4867758 |
0.396 |
|
| 2014 |
Abd El Qader M, Singh RK, Galvin SN, Yu L, Rowell JM, Newman N. Switching at small magnetic fields in Josephson junctions fabricated with ferromagnetic barrier layers Applied Physics Letters. 104: 022602. DOI: 10.1063/1.4862195 |
0.431 |
|
| 2014 |
Carpenter RW, Xie H, Lehner S, Aoki T, Mardinly J, Vahidi M, Newman N, Ponce FA. High energy and spatial resolution EELS band gap measurements using a nion monochromated cold field emission HERMES dedicated STEM Microscopy and Microanalysis. 20: 70-71. DOI: 10.1017/S1431927614002074 |
0.661 |
|
| 2014 |
Li Y, Kopas C, Huang M, Bunish K, Newman N. Growth and characterization of epitaxial Ba(Co,Zn)1/3Nb2/3O3 thin films Journal of Crystal Growth. 387: 81-85. DOI: 10.1016/J.Jcrysgro.2013.10.047 |
0.812 |
|
| 2013 |
Zhang T, Kopas C, Yu L, Carpenter RW, Qader MA, Huang M, Singh RK, Mardinly J, Cantor R, Rowell JM, Newman N. Effect of Helium Ion Irradiation on the Tunneling Behavior in Niobium/Aluminum–Aluminum Oxide/Niobium Josephson Junctions Ieee Transactions On Applied Superconductivity. 23: 1101610-1101610. DOI: 10.1109/Tasc.2013.2256358 |
0.779 |
|
| 2013 |
Očko M, Žonja S, Salamon K, Ivanda M, Yu L, Newman N. Investigations of the disorder in the TaxN thin films: On the first order Raman spectrum of the rock salt crystal structure Journal of Applied Physics. 114: 043707. DOI: 10.1063/1.4816340 |
0.484 |
|
| 2013 |
Liu L, Matusevich A, Garg C, Newman N. Erratum: “The dominance of paramagnetic loss in microwave dielectric ceramics at cryogenic temperatures” [Appl. Phys. Lett. 101, 252901 (2012)] Applied Physics Letters. 102: 049901. DOI: 10.1063/1.4790188 |
0.505 |
|
| 2013 |
Abd El Qader M, Venkat R, Kumar R, Hartmann T, Ginobbi P, Newman N, Singh R. Structural, electrical, and thermoelectric properties of CrSi 2 thin films Thin Solid Films. 545: 100-105. DOI: 10.1016/J.Tsf.2013.07.040 |
0.447 |
|
| 2013 |
Vahidi M, Lehner SW, Buseck PR, Newman N. Growth of epitaxial pyrite (FeS2) thin films using sequential evaporation Acta Materialia. 61: 7392-7398. DOI: 10.1016/J.Actamat.2013.08.045 |
0.729 |
|
| 2013 |
Peshek TJ, Zhang L, Singh RK, Tang Z, Vahidi M, To B, Coutts TJ, Gessert TA, Newman N, Van Schilfgaarde M. Criteria for improving the properties of ZnGeAs2 solar cells Progress in Photovoltaics: Research and Applications. 21: 906-917. DOI: 10.1002/Pip.2177 |
0.718 |
|
| 2012 |
Liu L, Flores M, Newman N. Microwave loss in the high-performance dielectric Ba(Zn1/3Ta2/3)O3 at 4.2 K. Physical Review Letters. 109: 257601. PMID 23368499 DOI: 10.1103/Physrevlett.109.257601 |
0.579 |
|
| 2012 |
Liu L, Matusevich A, Garg C, Newman N. The dominance of paramagnetic loss in microwave dielectric ceramics at cryogenic temperatures Applied Physics Letters. 101: 252901. DOI: 10.1063/1.4772491 |
0.575 |
|
| 2012 |
Lehner SW, Newman N, van Schilfgaarde M, Bandyopadhyay S, Savage K, Buseck PR. Defect energy levels and electronic behavior of Ni-, Co-, and As-doped synthetic pyrite (FeS2) Journal of Applied Physics. 111: 083717. DOI: 10.1063/1.4706558 |
0.36 |
|
| 2012 |
Liu LT, Kopas C, Singh RK, Hanley RM, Newman N. Growth and characterization of Ba(Cd 1/3Ta 2/3)O 3 thin films Thin Solid Films. 520: 6153-6157. DOI: 10.1016/J.Tsf.2012.06.034 |
0.805 |
|
| 2012 |
Vahidi M, Tang ZZ, Tucker J, Peshek TJ, Zhang L, Kopas C, Singh RK, Van Schilfgaarde M, Newman N. Experimental study of the kinetically-limited decomposition of ZnGeAs 2 and its role in determining optimal conditions for thin film growth Journal of Crystal Growth. 338: 267-271. DOI: 10.1016/J.Jcrysgro.2011.11.004 |
0.773 |
|
| 2011 |
Strawbridge B, Cernetic N, Chapley J, Singh RK, Mahajan S, Newman N. Influence of surface topography onin situreflection electron energy loss spectroscopy plasmon spectra of AlN, GaN, and InN semiconductors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 29: 041602. DOI: 10.1116/1.3584775 |
0.334 |
|
| 2011 |
Bharathan P, Bandyopadhyay S, Espinasse M, Singh R, Newman N. Electrical properties of AsxSe1−x (x≤0.05) Mott-barriers Journal of Non-Crystalline Solids. 357: 3366-3372. DOI: 10.1016/J.Jnoncrysol.2011.06.016 |
0.36 |
|
| 2011 |
Zhang QL, Meng FY, Crozier PA, Newman N, Mahajan S. Effects of stress on phase separation in InxGa1- xN/GaN multiple quantum-wells Acta Materialia. 59: 3759-3769. DOI: 10.1016/J.Actamat.2010.11.020 |
0.331 |
|
| 2010 |
Tarantini C, Putti M, Gurevich A, Shen Y, Singh RK, Rowell JM, Newman N, Larbalestier DC, Cheng P, Jia Y, Wen HH. Suppression of the critical temperature of superconducting NdFeAs(OF) single crystals by Kondo-like defect sites induced by alpha-particle irradiation. Physical Review Letters. 104: 087002. PMID 20366959 DOI: 10.1103/Physrevlett.104.087002 |
0.42 |
|
| 2010 |
Zhu Y, Pogrebnyakov AV, Wilke RH, Chen K, Xi XX, Redwing JM, Zhuang CG, Feng QR, Gan ZZ, Singh RK, Shen Y, Newman N, Rowell JM, Hunte F, Jaroszynski J, et al. Nanoscale disorder in pure and doped MgB2 thin films Superconductor Science and Technology. 23. DOI: 10.1088/0953-2048/23/9/095008 |
0.53 |
|
| 2010 |
Shen Y, Singh RK, Sanghavi S, Wei Y, Chamberlin RV, Moeckly BH, Rowell JM, Newman N. Characterization of Josephson and quasi-particle currents in MgB2/MgB2and Pb/Pb contact junctions Superconductor Science and Technology. 23: 075003. DOI: 10.1088/0953-2048/23/7/075003 |
0.408 |
|
| 2010 |
Očko M, Žonja S, Nelson GL, Freericks JK, Yu L, Newman N. Low-temperature transport properties of TaxN thin films (0.72 ≤ x ≤ 0.83) Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/44/445405 |
0.509 |
|
| 2010 |
Bandyopadhyay S, Marzke RF, Singh RK, Newman N. Electrical conductivities and Li ion concentration-dependent diffusivities, in polyurethane polymers doped with lithium trifluoromethanesulfonimide (LiTFSI) or lithium perchlorate (LiClO4) Solid State Ionics. 181: 1727-1731. DOI: 10.1016/J.Ssi.2010.09.057 |
0.323 |
|
| 2009 |
Wu Y, Lidin S, Groy TL, Newman N, Häussermann U. Zn(5)Sb(4)In(2-delta) - a ternary derivative of thermoelectric zinc antimonides. Inorganic Chemistry. 48: 5996-6003. PMID 19476316 DOI: 10.1021/Ic900302A |
0.355 |
|
| 2009 |
Evans MJ, Wu Y, Kranak VF, Newman N, Reller A, Garcia-Garcia FJ, Häussermann U. Structural properties and superconductivity in the ternary intermetallic compounds MAB (M=Ca, Sr, Ba; A=Al, Ga, In; B=Si, Ge, Sn) Physical Review B. 80: 64514. DOI: 10.1103/Physrevb.80.064514 |
0.329 |
|
| 2009 |
Wu Y, Nylén J, Naseyowma C, Newman N, Garcia-Garcia FJ, Häussermann U. Comparative Study of the Thermoelectric Properties of Amorphous Zn41Sb59and Crystalline Zn4Sb3 Chemistry of Materials. 21: 151-155. DOI: 10.1021/Cm802893V |
0.354 |
|
| 2009 |
Bandyopadhyay S, Liu S, Tang Z, Singh R, Newman N. Leakage-current characteristics of vanadium- and scandium-doped barium strontium titanate ceramics over a wide range of DC electric fields Acta Materialia. 57: 4935-4947. DOI: 10.1016/J.Actamat.2009.06.063 |
0.406 |
|
| 2009 |
Tang Z, Liu S, Singh R, Bandyopadhyay S, Sus I, Kotani T, Schilfgaarde Mv, Newman N. Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (100) thin films Acta Materialia. 57: 432-440. DOI: 10.1016/J.Actamat.2008.09.038 |
0.458 |
|
| 2008 |
Tengå A, Lidin S, Belieres JP, Newman N, Wu Y, Häussermann U. Metastable Cd4Sb3: a complex structured intermetallic compound with semiconductor properties. Journal of the American Chemical Society. 130: 15564-72. PMID 19006411 DOI: 10.1021/Ja805454P |
0.32 |
|
| 2008 |
Shen Y, Gandikota R, Singh RK, Hunte FL, Jaroszynski J, Larbalestier DC, Rowell JM, Newman N. A novel technique for synthesizing MgB2 thin films with high upper critical fields Superconductor Science and Technology. 21. DOI: 10.1088/0953-2048/21/8/085009 |
0.457 |
|
| 2008 |
Singh RK, Shen Y, Gandikota R, Wright D, Carvalho C, Rowell JM, Newman N. Effect of Rb and Cs doping on superconducting properties of MgB2 thin films Superconductor Science and Technology. 21. DOI: 10.1088/0953-2048/21/2/025012 |
0.454 |
|
| 2008 |
Singh RK, Shen Y, Gandikota R, Rowell JM, Newman N. Effect of stoichiometry on oxygen incorporation in MgB2 thin films Superconductor Science and Technology. 21. DOI: 10.1088/0953-2048/21/01/015018 |
0.409 |
|
| 2007 |
Chamberlin RV, Newman N, Gandikota R, Singh RK, Moeckly BH. Saturation and intrinsic dynamics of fluxons in NbTi and MgB2 Applied Physics Letters. 90. DOI: 10.1063/1.2717111 |
0.316 |
|
| 2007 |
Nylén J, Lidin S, Andersson M, Iversen BB, Newman N, Häussermann U. Low-Temperature Structural Transitions in the Phonon-Glass Thermoelectric Material β-Zn4Sb3: Ordering of Zn Interstitials and Defects Chemistry of Materials. 19: 834-838. DOI: 10.1021/Cm062384J |
0.325 |
|
| 2007 |
Nylén J, Lidin S, Andersson M, Liu H, Newman N, Häussermann U. Effect of metal doping on the low-temperature structural behavior of thermoelectric β-Zn4Sb3 Journal of Solid State Chemistry. 180: 2603-2615. DOI: 10.1016/J.Jssc.2007.07.013 |
0.532 |
|
| 2007 |
Liu S, Zenou V, Sus I, Kotani T, van Schilfgaarde M, Newman N. Structure–dielectric property relationship for vanadium- and scandium-doped barium strontium titanate Acta Materialia. 55: 2647-2657. DOI: 10.1016/J.Actamat.2006.12.006 |
0.505 |
|
| 2006 |
Liu H, Liu S, Zenou VY, Beach C, Newman N. Structural, Dielectric, and Optical Properties of Ni-Doped Barium Cadmium Tantalate Ceramics Japanese Journal of Applied Physics. 45: 9140-9142. DOI: 10.1143/Jjap.45.9140 |
0.624 |
|
| 2006 |
Strawbridge B, Singh RK, Beach C, Mahajan S, Newman N. Effect of surface topography on reflection electron energy loss plasmon spectra of group III metals Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 24: 1776-1781. DOI: 10.1116/1.2218855 |
0.395 |
|
| 2006 |
Sun J, Liu S, Newman N, Smith DJ. Atomic Resolution Transmission Electron Microscopy of the Microstructure of Ordered Ba(Cd1/3Ta2/3)O3 Perovskite Ceramics Journal of the American Ceramic Society. 89: 1047-1052. DOI: 10.1111/J.1551-2916.2005.00800.X |
0.477 |
|
| 2006 |
Yu L, Gandikota R, Singh RK, Gu L, Smith DJ, Meng X, Zeng X, Van Duzer T, Rowell JM, Newman N. Internally shunted Josephson junctions with barriers tuned near the metal-insulator transition for RSFQ logic applications Superconductor Science and Technology. 19: 719-731. DOI: 10.1088/0953-2048/19/8/006 |
0.462 |
|
| 2006 |
Wu SY, Newman N. Electrical transport properties of ferromagnetic GaxCr1−xN thin films Applied Physics Letters. 89: 142105. DOI: 10.1063/1.2357603 |
0.453 |
|
| 2006 |
Wise AT, Kim DW, Newman N, Mahajan S. Atomic ordering in AlxGa1−xN thin-films Scripta Materialia. 54: 153-157. DOI: 10.1016/J.Scriptamat.2005.09.045 |
0.362 |
|
| 2006 |
Liu S, Merrick VA, Newman N. Structural, chemical and dielectric properties of ceramic injection moulded Ba(Zn1/3Ta2/3)O3 microwave dielectric ceramics Journal of the European Ceramic Society. 26: 3273-3278. DOI: 10.1016/J.Jeurceramsoc.2005.08.001 |
0.51 |
|
| 2006 |
Newman N, Wu SY, Liu HX, Medvedeva J, Gu L, Singh RK, Yu ZG, Krainsky IL, Krishnamurthy S, Smith DJ, Freeman AJ, van Schilfgaarde M. Recent progress towards the development of ferromagnetic nitride semiconductors for spintronic applications Physica Status Solidi (a). 203: 2729-2737. DOI: 10.1002/Pssa.200669636 |
0.352 |
|
| 2005 |
Medvedeva JE, Freeman AJ, Cui XY, Stampfl C, Newman N. Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure. Physical Review Letters. 94: 146602. PMID 15904088 DOI: 10.1103/Physrevlett.94.146602 |
0.337 |
|
| 2005 |
Yu L, Newman N, Rowell JM, Duzer TV. Incorporation of a frequency-dependent dielectric response for the barrier material in the Josephson junction circuit model Ieee Transactions On Applied Superconductivity. 15: 3886-3900. DOI: 10.1109/Tasc.2005.854302 |
0.433 |
|
| 2005 |
Yu L, Singh RK, Liu H, Wu SY, Hu R, Durand D, Bulman J, Rowell JM, Newman N. Fabrication of niobium titanium nitride thin films with high superconducting transition temperatures and short penetration lengths Ieee Transactions On Applied Superconductivity. 15: 44-48. DOI: 10.1109/Tasc.2005.844126 |
0.648 |
|
| 2005 |
Braccini V, Gurevich A, Giencke JE, Jewell MC, Eom CB, Larbalestier DC, Pogrebnyakov A, Cui Y, Liu BT, Hu YF, Redwing JM, Li Q, Xi XX, Singh RK, Gandikota R, ... ... Newman N, et al. Erratum: High-field superconductivity in alloyedMgB2thin films [Phys. Rev. B71, 012504 (2005)] Physical Review B. 71. DOI: 10.1103/Physrevb.71.179902 |
0.369 |
|
| 2005 |
Braccini V, Gurevich A, Giencke JE, Jewell MC, Eom CB, Larbalestier DC, Pogrebnyakov A, Cui Y, Liu BT, Hu YF, Redwing JM, Li Q, Xi XX, Singh RK, Gandikota R, ... ... Newman N, et al. High-field superconductivity in alloyed MgB 2 thin films Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.012504 |
0.305 |
|
| 2005 |
Liu HX, Wu SY, Singh RK, Newman N. Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer Journal of Applied Physics. 98: 046106. DOI: 10.1063/1.2014936 |
0.385 |
|
| 2005 |
Gandikota R, Singh RK, Kim J, Wilkens B, Newman N, Rowell JM, Pogrebnyakov AV, Xi XX, Redwing JM, Xu SY, Li Q, Moeckly BH. Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films Applied Physics Letters. 87. DOI: 10.1063/1.2012524 |
0.388 |
|
| 2005 |
Gandikota R, Singh RK, Kim J, Wilkens B, Newman N, Rowell JM, Pogrebnyakov AV, Xi XX, Redwing JM, Xu SY, Li Q. Effect of damage by 2 MeV He ions on the normal and superconducting properties of magnesium diboride Applied Physics Letters. 86. DOI: 10.1063/1.1845591 |
0.316 |
|
| 2005 |
Singh R, Wu SY, Liu HX, Gu L, Smith D, Newman N. The role of Cr substitution on the ferromagnetic properties of Ga1−xCrxN Applied Physics Letters. 86: 12504. DOI: 10.1063/1.1843276 |
0.388 |
|
| 2005 |
Liu S, Taylor R, Petrovic NS, Budd L, Van Schilfgaarde M, Newman N. Experimental and theoretical investigation of the structural, chemical, electronic, and high frequency dielectric properties of barium cadmium tantalate–based ceramics Journal of Applied Physics. 97: 014105. DOI: 10.1063/1.1823575 |
0.335 |
|
| 2005 |
Gu L, Wu SY, Liu HX, Singh R, Newman N, Smith D. Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors Journal of Magnetism and Magnetic Materials. 1395-1397. DOI: 10.1016/J.Jmmm.2004.11.446 |
0.37 |
|
| 2004 |
Liu S, Sun J, Taylor R, Smith DJ, Newman N. Microstructure and dielectric properties of Ba(Cd1/3Ta2/3)O3 microwave ceramics synthesized with a boron oxide sintering aid Journal of Materials Research. 19: 3526-3533. DOI: 10.1557/Jmr.2004.0456 |
0.519 |
|
| 2004 |
Sun J, Liu S, Newman N, McCartney M, Smith DJ. Electron microscopy characterization of Ba(Cd1/3Ta2/3)O3 microwave dielectrics with boron additive Journal of Materials Research. 19: 1387-1391. DOI: 10.1557/Jmr.2004.0185 |
0.481 |
|
| 2004 |
Liu HX, Wu SY, Singh RK, Gu L, Smith DJ, Newman N, Dilley NR, Montes L, Simmonds MB. Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN Applied Physics Letters. 85: 4076-4078. DOI: 10.1063/1.1812581 |
0.314 |
|
| 2004 |
Sun J, Liu S, Newman N, Smith DJ. Ordered domains and boundary structure in Ba(Cd1/3Ta2/3)O3 perovskite dielectrics Applied Physics Letters. 84: 3918-3920. DOI: 10.1063/1.1741035 |
0.447 |
|
| 2004 |
Kim J, Singh R, Rowell J, Newman N, Gu L, Smith DJ. Thermochemical analysis of MgB2 synthesis by molecular-beam epitaxy Journal of Crystal Growth. 270: 107-112. DOI: 10.1016/J.Jcrysgro.2004.05.116 |
0.41 |
|
| 2003 |
Wu SY, Liu HX, Gu L, Singh RK, van Schilfgaarde M, Smith DJ, Dilley NR, Montes L, Simmonds MB, Newman N. Synthesis and characterization of high quality ferromagnetic Cr-doped GaN and AlN thin films with Curie temperatures above 900K Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.57 |
0.418 |
|
| 2003 |
Sun J, Liu SJ, Newman N, Smith DJ. Ordered Structures in Ba(Cd1/3Ta2/3)O3 Microwave Ceramics: A Transmission Electron Microscopy Study Mrs Proceedings. 783. DOI: 10.1557/Proc-783-B5.12 |
0.478 |
|
| 2003 |
Kim J, Singh RK, Newman N, Rowell JM. Thermochemistry of MgB/sub 2/ thin film synthesis Ieee Transactions On Applied Superconductivity. 13: 3238-3241. DOI: 10.1109/Tasc.2003.812210 |
0.418 |
|
| 2003 |
Wu SY, Liu HX, Gu L, Singh RK, Budd L, van Schilfgaarde M, McCartney MR, Smith DJ, Newman N. Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films Applied Physics Letters. 82: 3047-3049. DOI: 10.1063/1.1570521 |
0.416 |
|
| 2002 |
Yu L, Newman N, Rowell JM. Measurement of the coherence length of sputtered Nb/sub 0.62/Ti/sub 0.38/N thin films Ieee Transactions On Applied Superconductivity. 12: 1795-1798. DOI: 10.1109/Tasc.2002.1020339 |
0.461 |
|
| 2002 |
Yu L, Stampfl C, Marshall D, Eshrich T, Narayanan V, Rowell JM, Newman N, Freeman AJ. Mechanism and control of the metal-to-insulator transition in rocksalt tantalum nitride Physical Review B - Condensed Matter and Materials Physics. 65: 2451101-2451105. DOI: 10.1103/Physrevb.65.245110 |
0.475 |
|
| 2002 |
Kaul AB, Whiteley SR, Van Duzer T, Yu L, Newman N, Rowell JM. Erratum: “Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications” [Appl. Phy. Lett. 78, 99 (2001)] Applied Physics Letters. 80: 2611-2611. DOI: 10.1063/1.1467713 |
0.414 |
|
| 2002 |
Duzer TV, Zheng L, Meng X, Loyo C, Whiteley SR, Yu L, Newman N, Rowell JM, Yoshikawa N. Engineering issues in high-frequency RSFQ circuits Physica C-Superconductivity and Its Applications. 372: 1-6. DOI: 10.1016/S0921-4534(02)00686-X |
0.368 |
|
| 2001 |
Gworek CS, Phatak P, Jonker BT, Weber ER, Newman N. Pressure dependence of Cu, Ag, andFe/n−GaAsSchottky barrier heights Physical Review B. 64. DOI: 10.1103/Physrevb.64.045322 |
0.32 |
|
| 2001 |
Fan ZY, Hinks DG, Newman N, Rowell JM. Experimental study of MgB2 decomposition Applied Physics Letters. 79: 87-89. DOI: 10.1063/1.1383804 |
0.369 |
|
| 2001 |
Kaul AB, Whiteley SR, Van Duzer T, Yu L, Newman N, Rowell JM. Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications Applied Physics Letters. 78: 99-101. DOI: 10.1063/1.1337630 |
0.483 |
|
| 2001 |
Fan Z, Newman N. Experimental determination of the rates of decomposition and cation desorption from AlN surfaces Materials Science and Engineering: B. 87: 244-248. DOI: 10.1016/S0921-5107(01)00720-6 |
0.334 |
|
| 2000 |
Fan ZY, Rong G, Newman N, Smith DJ. Defect annihilation in AlN thin films by ultrahigh temperature processing Applied Physics Letters. 76: 1839-1841. DOI: 10.1063/1.126185 |
0.32 |
|
| 1999 |
Rong G, Tsakalakos L, Browning J, Newman N. Epitaxial Growth of BaZn1/3Ta2/3O3 Thin-Films for Microwave Applications Mrs Proceedings. 574. DOI: 10.1557/PROC-574-163 |
0.362 |
|
| 1996 |
Suski T, Krueger J, Kisielowski C, Phatak P, Leung MSH, Liliental-Weber Z, Gassmann A, Newman N, Rubin MD, Weber ER, Grzegory I, Jun J, Bockowski M, Porowski S, Helava HI. Properties Of Homoepitaxially Mbe-Grown Gan Mrs Proceedings. 423. DOI: 10.1557/Proc-423-329 |
0.398 |
|
| 1996 |
Gassmann A, Suski T, Newman N, Kisielowski C, Jones E, Weber ER, Liliental‐Weber Z, Rubin MD, Helava HI, Grzegory I, Bockowski M, Jun J, Porowski S. Homoepitaxial growth of GaN using molecular beam epitaxy Journal of Applied Physics. 80: 2195-2198. DOI: 10.1063/1.363112 |
0.393 |
|
| 1996 |
Chan JS, Cheung NW, Schloss L, Jones E, Wong WS, Newman N, Liu X, Weber ER, Gassman A, Rubin MD. Thermal annealing characteristics of Si and Mg-implanted GaN thin films Applied Physics Letters. 68: 2702-2704. DOI: 10.1063/1.116314 |
0.402 |
|
| 1996 |
Anders A, Newman N, Rubin M, Dickinson M, Jones E, Phatak P, Gassmann A. Hollow‐anode plasma source for molecular beam epitaxy of gallium nitride Review of Scientific Instruments. 67: 905-907. DOI: 10.1063/1.1146834 |
0.381 |
|
| 1995 |
Liliental-Weber Z, Ruvimov S, Kisielowski C, Chen Y, Swider W, Washburn J, Newman N, Gassmann A, Liu X, Schloss L, Weber E, Grzegory I, Bockowski M, Jun J, Suski T, et al. Structural Defects in Heteroepitaxial and Homoepitaxial GaN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-351 |
0.407 |
|
| 1995 |
Fu TC, Newman N, Jones E, Chan JS, Liu X, Rubin MD, Cheung NW, Weber ER. The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy Journal of Electronic Materials. 24: 249-255. DOI: 10.1007/Bf02659683 |
0.376 |
|
| 1994 |
Newman N, Fu T, Liu X, Liliental-Weber Z, Rubin M, Chan JS, Jones E, Ross JT, Tidswell I, Yu KM, Cheung N, Weber ER. Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy Mrs Proceedings. 339. DOI: 10.1557/Proc-339-483 |
0.383 |
|
| 1994 |
Chan JS, Fu TC, Cheung NW, Newman N, Liu X, Ross JT, Rubin MD, Chu P. Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy Mrs Proceedings. 339. DOI: 10.1557/Proc-339-223 |
0.398 |
|
| 1994 |
Sheats JR, Newman N, Taber RC, Merchant P. Effects of processing on electrical properties of YBa2Cu307 films. II. In situ deposition processes Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 388-392. DOI: 10.1116/1.579252 |
0.42 |
|
| 1994 |
Liang GC, Withers RS, Newman N, Cole BF. High-Temperature Superconductive Devices on Sapphire Ieee Transactions On Microwave Theory and Techniques. 42: 34-40. DOI: 10.1109/22.265525 |
0.303 |
|
| 1994 |
Wilson RG, Schwartz RN, Abernathy CR, Pearton SJ, Newman N, Rubin M, Fu T, Zavada JM. 1.54-μm photoluminescence from Er-implanted GaN and AlN Applied Physics Letters. 65: 992-994. DOI: 10.1063/1.112172 |
0.37 |
|
| 1993 |
Miller D, Richards PL, Etemad S, Inam A, Venkatesan T, Dutta B, Wu XD, Eom CB, Geballe TH, Newman N, Cole BF. Correspondence between microwave and submillimeter absorptivity in epitaxial thin films of YBa2Cu3O7. Physical Review. B, Condensed Matter. 47: 8076-8088. PMID 10004818 DOI: 10.1103/Physrevb.47.8076 |
0.433 |
|
| 1993 |
Jäger ND, Dreszer P, Newman N, Verma AK, Liliental-Weber Z, Weber ER. Characterization of EL2 in Annealed LT-GaAs Materials Science Forum. 1599-1604. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.1599 |
0.37 |
|
| 1993 |
Zheng JF, Liu X, Newman N, Weber ER, Ogletree DF, Salmeron MB. Scanning tunneling microscopy of Si donors in GaAs Materials Science Forum. 1319-1324. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.1319 |
0.304 |
|
| 1993 |
Chan J, Fu T, Cheung NW, Ross J, Newman N, Rubin M. Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy Mrs Proceedings. 300. DOI: 10.1557/Proc-300-435 |
0.429 |
|
| 1993 |
Newman N, Ross J, Rubin M. Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films Applied Physics Letters. 62: 1242-1244. DOI: 10.1063/1.108746 |
0.37 |
|
| 1993 |
Jäger ND, Verma AK, Dreszer P, Newman N, Liliental-Weber Z, Schilfgaarde Mv, Weber ER. First direct observation of EL2-like defect levels in annealed LT-GaAs Journal of Electronic Materials. 22: 1499-1502. DOI: 10.1007/Bf02650007 |
0.375 |
|
| 1993 |
Newman N, Lyons WG. High-temperature superconducting microwave devices: Fundamental issues in materials, physics, and engineering Journal of Superconductivity. 6: 119-160. DOI: 10.1007/Bf00625741 |
0.351 |
|
| 1992 |
Lin XW, Liliental-Weber Z, Swider W, McCants T, Newman N, Spicer WE, Washburn J, Weber ER. Electrical and Structural Properties of Ti Contacts on an Atomically Clean N-Type GaAs Surface Mrs Proceedings. 281. DOI: 10.1557/Proc-281-665 |
0.572 |
|
| 1992 |
Cole BF, Liang GC, Newman N, Char K, Zaharchuk G, Martens JS. Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications Applied Physics Letters. 61: 1727-1729. DOI: 10.1063/1.108411 |
0.398 |
|
| 1992 |
Miller D, Richards PL, Garrison SM, Newman N, Eom CB, Geballe TH, Etemad S, Inam A, Venkatesan T, Martens JS, Lee WY, Bourne LC. Submillimeter and microwave residual losses in epitaxial films of Y-Ba-Cu-O and Tl-Ca-Ba-Cu-O Journal of Superconductivity. 5: 379-388. DOI: 10.1007/Bf00618138 |
0.34 |
|
| 1991 |
Phatak P, Imaizumi M, Weber ER, Newman N, Liliental-Weber Z. The Microstructure of ZrN/GaAs Schottky Contacts and its Correlation with Electrical Properties. Mrs Proceedings. 240. DOI: 10.1557/Proc-240-455 |
0.423 |
|
| 1991 |
Liang GC, Newman N, Cole BF, Dai X, Hebert DF, Duzer TV. High-Temperature Superconductor Resonators and Phase Shifters Ieee Transactions On Applied Superconductivity. 1: 58-66. DOI: 10.1109/77.80750 |
0.376 |
|
| 1991 |
Garrison SM, Newman N, Cole BF, Char K, Barton RW. Response to 'Comment on "Observation of two in-plane epitaxial states in YBa2Cu3O7-δ films on yttria stabilized ZrO2"' Applied Physics Letters. 59: 3060. DOI: 10.1063/1.106426 |
0.385 |
|
| 1991 |
Miller D, Richards PL, Etemad S, Inam A, Venkatesan T, Dutta B, Wu XD, Eom CB, Geballe TH, Newman N, Cole BF. Residual losses in epitaxial thin films of YBa2Cu 3O7 from microwave to submillimeter wave frequencies Applied Physics Letters. 59: 2326-2328. DOI: 10.1063/1.106058 |
0.398 |
|
| 1991 |
Char K, Colclough MS, Garrison SM, Newman N, Zaharchuk G. Bi-epitaxial grain boundary junctions in YBa2Cu 3O7 Applied Physics Letters. 59: 733-735. DOI: 10.1063/1.105355 |
0.404 |
|
| 1991 |
Garrison SM, Newman N, Cole BF, Char K, Barton RW. Observation of two in-plane epitaxial states in YBa2Cu 3O7-δ films on yttria-stabilized ZrO2 Applied Physics Letters. 58: 2168-2170. DOI: 10.1063/1.104995 |
0.426 |
|
| 1991 |
Fork DK, Ponce FA, Tramontana JC, Newman N, Phillips JM, Geballe TH. High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire Applied Physics Letters. 58: 2432-2434. DOI: 10.1063/1.104864 |
0.437 |
|
| 1990 |
Spicer WE, Liliental-Weber Z, Newman N, Weber ER, Spindt CJ. “Pinning” and Fermi level movement at GaAs surfaces and interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2084-2089. DOI: 10.1116/1.577007 |
0.495 |
|
| 1990 |
Newman N, Char K, Garrison SM, Barton RW, Taber RC, Eom CB, Geballe TH, Wilkens B. YBa2Cu3O7-δ superconducting films with low microwave surface resistance over large areas Applied Physics Letters. 57: 520-522. DOI: 10.1063/1.104244 |
0.425 |
|
| 1990 |
Char K, Newman N, Garrison SM, Barton RW, Taber RC, Laderman SS, Jacowitz RD. Microwave surface resistance of epitaxial YBa2Cu 3O7 thin films on sapphire Applied Physics Letters. 57: 409-411. DOI: 10.1063/1.103651 |
0.378 |
|
| 1989 |
Newman N, Spicer WE, Weber ER, Liliental-Weber Z. Electrical Study of Metal/Gaas Interfaces Mrs Proceedings. 148: 117. DOI: 10.1557/Proc-148-117 |
0.47 |
|
| 1989 |
Leon RP, Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes Journal of Applied Physics. 66: 711-715. DOI: 10.1063/1.343543 |
0.538 |
|
| 1989 |
Liliental-Weber Z, Newman N, Washburn J, Weber ER, Spicer WE. Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts Applied Physics Letters. 54: 356-358. DOI: 10.1063/1.100968 |
0.546 |
|
| 1989 |
Spicer WE, Cao R, Miyano K, Kendelewicz T, Lindau I, Weber E, Liliental-Weber Z, Newman N. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation Applied Surface Science. 41: 1-16. DOI: 10.1016/0169-4332(89)90026-3 |
0.595 |
|
| 1988 |
Mccants CE, Kendelewicz T, Mahowald PH, Bertness KA, Williams MD, Newman N, Lindau I, Spicer WE. Chemical and electrical properties at the annealed Ti/GaAsf 110) interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1466-1472. DOI: 10.1116/1.575727 |
0.548 |
|
| 1988 |
Pallix JB, Becker CH, Newman N. Analysis of thin‐film systems using nonresonant multiphoton ionization Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 6: 1049-1052. DOI: 10.1116/1.575633 |
0.391 |
|
| 1988 |
Miret A, Newman N, Weber ER, Liliental-Weber Z, Washburn J, Spicer WE. Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study Journal of Applied Physics. 63: 2006-2010. DOI: 10.1063/1.341178 |
0.48 |
|
| 1988 |
Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Schottky barrier instabilities due to contamination Applied Physics Letters. 53: 145-147. DOI: 10.1063/1.100351 |
0.51 |
|
| 1988 |
Spicer WE, Kendelewicz T, Newman N, Cao R, McCants C, Miyano K, Lindau I, Liliental-Weber Z, Weber ER. The advanced unified defect model and its applications Applied Surface Science. 33: 1009-1029. DOI: 10.1016/0169-4332(88)90411-4 |
0.507 |
|
| 1987 |
Newman N, van Schilfgaarde M, Spicer WE. Electrical study of Schottky-barrier heights on atomically clean p-type InP(110) surfaces. Physical Review. B, Condensed Matter. 35: 6298-6304. PMID 9940862 DOI: 10.1103/Physrevb.35.6298 |
0.461 |
|
| 1987 |
Liliental-Weber Z, Miret-Goutier A, Newman N, Jou C, Spicer W, Washburn J, Weber E. The Influence of Current Stressing on the Structure of Ag Contacts to GaAs Mrs Proceedings. 102. DOI: 10.1557/Proc-102-241 |
0.49 |
|
| 1987 |
Newman N. Mechanism for annealing-induced changes in the electrical characteristics of Al/GaAs and Al/InP Schottky contacts Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5: 1020. DOI: 10.1116/1.583766 |
0.379 |
|
| 1987 |
Coulman D, Newman N, Reid GA, Liliental-Weber Z, Weber ER, Spicer WE. A chemical and structural investigation of schottky and ohmic au/gaas contacts Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 1521-1525. DOI: 10.1116/1.574595 |
0.54 |
|
| 1987 |
Eglash SJ, Newman N, Pan S, Mo D, Shenai K, Spicer WE, Ponce FA, Collins DM. Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights Journal of Applied Physics. 61: 5159-5169. DOI: 10.1063/1.338290 |
0.537 |
|
| 1986 |
Newman N, van Schilfgaarde M, Kendelwicz T, Williams MD, Spicer WE. Electrical study of Schottky barriers on atomically clean GaAs(110) surfaces. Physical Review. B, Condensed Matter. 33: 1146-1159. PMID 9938380 DOI: 10.1103/Physrevb.33.1146 |
0.472 |
|
| 1986 |
Liliental-Weber Z, Weber ER, Newman N, Spicer WE, Gronsky R, Washburn J. Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs Materials Science Forum. 1223-1228. DOI: 10.4028/Www.Scientific.Net/Msf.10-12.1223 |
0.513 |
|
| 1986 |
Newman N. On the Fermi level pinning behavior of metal/III–V semiconductor interfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4: 931. DOI: 10.1116/1.583494 |
0.369 |
|
| 1986 |
Liliental-Weber Z, Washburn J, Newman N, Spicer WE, Weber ER. Morphology of Au/GaAs interfaces Applied Physics Letters. 49: 1514-1516. DOI: 10.1063/1.97318 |
0.532 |
|
| 1986 |
Spicer WE, Kendelewicz T, Newman N, Chin KK, Lindau I. The mechanisms of Schottky barrier pinning in III-V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments Surface Science. 168: 240-259. DOI: 10.1016/0039-6028(86)90855-1 |
0.496 |
|
| 1985 |
Chin KK, Pan SH, Mo D, Mahowald P, Newman N, Lindau I, Spicer WE. Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110). Physical Review. B, Condensed Matter. 32: 918-923. PMID 9937100 DOI: 10.1103/Physrevb.32.918 |
0.461 |
|
| 1985 |
Newman N, van Schilfgaarde M, Kendelewicz T, Spicer WE. Electrical Study of Schottky Barriers on Cleaved InP and GaAs (110) Surfaces Mrs Proceedings. 54. DOI: 10.1557/Proc-54-433 |
0.537 |
|
| 1985 |
Liliental-Weber Z, Newman N, Spicer WE, Grónsky R, Washburn J, Weber ER. The Structure and Electrical Properties of Au Contacts to GaAs Mrs Proceedings. 54. DOI: 10.1557/Proc-54-415 |
0.391 |
|
| 1985 |
Newman N, Chin KK, Petro WG, Kendelewicz T, Williams MD, McCants CE, Spicer WE. Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 996-1001. DOI: 10.1116/1.573374 |
0.565 |
|
| 1985 |
Williams MD, Kendelewicz T, Newman N, Lindau I, Spicer WE. Summary Abstract: Ni and Pd Schottky barriers on GaAs(110) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 3: 977-978. DOI: 10.1116/1.573368 |
0.427 |
|
| 1985 |
Newman N, Kendelewicz T, Bowman L, Spicer WE. Electrical study of Schottky barrier heights on atomically clean and air‐exposedn‐InP(110) surfaces Applied Physics Letters. 46: 1176-1178. DOI: 10.1063/1.95749 |
0.513 |
|
| 1985 |
Newman N, Petro WG, Kendelewicz T, Pan SH, Eglash SJ, Spicer WE. Annealing of intimate Au-GaAs Schottky barriers: Thick and ultrathin metal films Journal of Applied Physics. 57: 1247-1251. DOI: 10.1063/1.334521 |
0.589 |
|
| 1985 |
Lindau I, Kendelewicz T, Newman N, List R, Williams M, Spicer W. Electronic properties of metal/III–V semiconductor interfaces Surface Science. 162: 591-604. DOI: 10.1016/0039-6028(85)90953-7 |
0.529 |
|
| 1985 |
Newman N, Kendelewicz T, Thomson D, Pan SH, Eglash SJ, Spicer WE. Schottky barriers on atomically clean cleaved GaAs Solid-State Electronics. 28: 307-312. DOI: 10.1016/0038-1101(85)90011-5 |
0.538 |
|
| 1984 |
Spicer WE, Pan S, Mo D, Newman N, Mahowald P, Kendelewicz T, Eglash S. Metallic and atomic approximations at the Schottky barrier interfaces Journal of Vacuum Science & Technology B. 2: 476-480. DOI: 10.1116/1.582898 |
0.468 |
|
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