| Year |
Citation |
Score |
| 2013 |
Ai Y, Gowrisanker S, Jia H, Quevedo-Lopez M, Alshareef HN, Wallace RM, Gnade BE. Encapsulation of high frequency organic Schottky diodes Thin Solid Films. 531: 509-512. DOI: 10.1016/J.Tsf.2012.12.117 |
0.658 |
|
| 2011 |
Wondmagegn WT, Satyala NT, Mejia-Silva I, Mao D, Gowrisanker S, Alshareef HN, Stiegler HJ, Quevedo-Lopez MA, Pieper RJ, Gnade BE. Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene Thin Solid Films. 519: 4313-4318. DOI: 10.1016/J.Tsf.2011.02.014 |
0.677 |
|
| 2011 |
Wondmagegn WT, Satyala NT, Pieper RJ, Quevedo-Lopez MA, Gowrisanker S, Alshareef HN, Stiegler HJ, Gnade BE. Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors Journal of Computational Electronics. 10: 144-153. DOI: 10.1007/S10825-010-0311-1 |
0.601 |
|
| 2009 |
Quevedo-Lopez MA, Gowrisanker S, Allee DR, Venugopal S, Krishna R, Kaftanoglu K, Alshareef HN, Gnade BE. Novel materials and integration schemes for CMOS-based circuits for flexible electronics Ecs Transactions. 25: 503-511. DOI: 10.1149/1.3203989 |
0.53 |
|
| 2009 |
Gowrisanker S, Ai Y, Jia H, Quevedo-Lopez MA, Alshareef HN, Trachtenberg I, Stiegler H, Edwards H, Barnett R, Gnade BE. Organic thin-film transistors with low threshold voltage variation on low-temperature substrates Electrochemical and Solid-State Letters. 12. DOI: 10.1149/1.3046068 |
0.705 |
|
| 2009 |
Gowrisanker S, Quevedo-Lopez MA, Alshareef HN, Gnade B, Venugopal S, Krishna R, Kaftanoglu K, Allee D. Low temperature integration of hybrid CMOS devices on plastic substrates 2009 Flexible Electronics and Displays Conference and Exhibition, Flex 2009. DOI: 10.1109/FEDC.2009.5069280 |
0.641 |
|
| 2009 |
Gowrisanker S, Quevedo-Lopez MA, Alshareef HN, Gnade BE, Venugopal S, Krishna R, Kaftanoglu K, Allee DR. A novel low temperature integration of hybrid CMOS devices on flexible substrates Organic Electronics: Physics, Materials, Applications. 10: 1217-1222. DOI: 10.1016/J.Orgel.2009.06.012 |
0.659 |
|
| 2009 |
Gowrisanker S, Quevedo-Lopez MA, Alshareef HN, Gnade BE. Time dependent breakdown characteristics of parylene dielectric in metal-insulator-metal capacitors Organic Electronics: Physics, Materials, Applications. 10: 1024-1027. DOI: 10.1016/J.Orgel.2009.05.003 |
0.612 |
|
| 2008 |
Gowrisanker S, Ai Y, Quevedo-Lopez MA, Jia H, Vogel E, Gnade B. A gate dielectric last approach to integrate organic based devices on plastic substrates Proceedings of the Academic Track of the 2008 Flexible Electronics and Displays - Conference and Exhibition, Flex. DOI: 10.1109/FEDC.2008.4483882 |
0.623 |
|
| 2008 |
Gowrisanker S, Ai Y, Quevedo-Lopez MA, Jia H, Alshareef HN, Vogel E, Gnade B. Impact of semiconductor/contact metal thickness ratio on organic thin-film transistor performance Applied Physics Letters. 92. DOI: 10.1063/1.2904968 |
0.629 |
|
| 2007 |
Ai Y, Gowrisanker S, Jia H, Trachtenberg I, Vogel E, Wallace RM, Gnade BE, Barnett R, Stiegler H, Edwards H. 14 MHz organic diodes fabricated using photolithographic processes Applied Physics Letters. 90. DOI: 10.1063/1.2752533 |
0.687 |
|
| 2006 |
Jia H, Gowrisanker S, Pant GK, Wallace RM, Gnade BE. Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1228-1232. DOI: 10.1116/1.2202858 |
0.619 |
|
| 2005 |
Panhuis Mi, Gowrisanker S, Vanesko DJ, Mire CA, Jia H, Xie H, Baughman RH, Musselman IH, Gnade BE, Dieckmann GR, Draper RK. Nanotube network transistors from peptide-wrapped single-walled carbon nanotubes. Small (Weinheim An Der Bergstrasse, Germany). 1: 820-3. PMID 17193531 DOI: 10.1002/Smll.200500001 |
0.439 |
|
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