Johnny C. Ho, Ph.D. - Publications

2009 University of California, Berkeley, Berkeley, CA 
Materials Science Engineering, Electronics and Electrical Engineering

51 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Li D, Lan C, Manikandan A, Yip S, Zhou Z, Liang X, Shu L, Chueh YL, Han N, Ho JC. Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires. Nature Communications. 10: 1664. PMID 30971702 DOI: 10.1038/s41467-019-09606-y  0.48
2018 Chen YZ, You YT, Chen PJ, Li D, Su TY, Lee L, Shih YC, Chen CW, Chang CC, Wang YC, Hong CY, Wei TC, Ho JC, Wei KH, Shen CH, et al. Environmentally and Mechanically Stable Selenium 1D/2D Hybrid Structures for Broad-Range Photoresponse from Ultraviolet to Infrared Wavelengths. Acs Applied Materials & Interfaces. PMID 30107132 DOI: 10.1021/acsami.8b11676  0.48
2016 Liang X, Shu L, Lin H, Fang M, Zhang H, Dong G, Yip S, Xiu F, Ho JC. Inverted Silicon Nanopencil Array Solar Cells with Enhanced Contact Structures. Scientific Reports. 6: 34139. PMID 27671709 DOI: 10.1038/srep34139  0.56
2016 Wang F, Wang C, Wang Y, Zhang M, Han Z, Yip S, Shen L, Han N, Pun EY, Ho JC. Diameter Dependence of Planar Defects in InP Nanowires. Scientific Reports. 6: 32910. PMID 27616584 DOI: 10.1038/srep32910  0.56
2016 Guo P, Xu J, Gong K, Shen X, Lu Y, Qiu Y, Xu J, Zou Z, Wang C, Yan H, Luo Y, Pan A, Zhang H, Ho JC, Yu K. On-Nanowire Axial Heterojunction Design for High-Performance Photodetectors. Acs Nano. PMID 27419468 DOI: 10.1021/acsnano.6b03458  0.56
2016 Han N, Yang ZX, Wang F, Yip S, Li D, Hung TF, Chen Y, Ho JC. Crystal Orientation Controlled Photovoltaic Properties of Multi-Layer GaAs Nanowire Arrays. Acs Nano. PMID 27223050 DOI: 10.1021/acsnano.6b02473  0.56
2016 Wang Y, Yang Z, Wu X, Han N, Liu H, Wang S, Li J, Tse W, Yip S, Chen Y, Ho JC. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method. Nanoscale Research Letters. 11: 191. PMID 27071678 DOI: 10.1186/s11671-016-1420-y  0.56
2015 Shen LF, Yip S, Yang ZX, Fang M, Hung T, Pun EY, Ho JC. High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics. Scientific Reports. 5: 16871. PMID 26607169 DOI: 10.1038/srep16871  0.56
2015 Fang M, Ho JC. Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning. Acs Nano. PMID 26351731 DOI: 10.1021/acsnano.5b05249  0.56
2015 Han N, Yang ZX, Wang F, Dong G, Yip S, Liang X, Hung TF, Chen Y, Ho JC. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics. Acs Applied Materials & Interfaces. PMID 26284305 DOI: 10.1021/acsami.5b06452  0.56
2015 Yang ZX, Yip S, Li D, Han N, Dong G, Liang X, Shu L, Hung TF, Mo X, Ho JC. Approaching the Hole Mobility Limit of GaSb Nanowires. Acs Nano. PMID 26279583 DOI: 10.1021/acsnano.5b04152  0.56
2015 Cheung HY, Yip S, Han N, Dong G, Fang M, Yang ZX, Wang F, Lin H, Wong CY, Ho JC. Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers. Acs Nano. PMID 26083845 DOI: 10.1021/acsnano.5b02745  0.56
2015 Han N, Yang Z, Wang F, Yip S, Dong G, Liang X, Hung T, Chen Y, Ho JC. Modulating the morphology and electrical properties of GaAs nanowires via catalyst stabilization by oxygen. Acs Applied Materials & Interfaces. 7: 5591-7. PMID 25700210 DOI: 10.1021/acsami.5b00666  0.56
2015 Miao J, Hu W, Guo N, Lu Z, Liu X, Liao L, Chen P, Jiang T, Wu S, Ho JC, Wang L, Chen X, Lu W. High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios. Small (Weinheim An Der Bergstrasse, Germany). 11: 936-42. PMID 25363206 DOI: 10.1002/smll.201402312  0.56
2014 Leung SF, Zhang Q, Xiu F, Yu D, Ho JC, Li D, Fan Z. Light Management with Nanostructures for Optoelectronic Devices. The Journal of Physical Chemistry Letters. 5: 1479-95. PMID 26269997 DOI: 10.1021/jz500306f  0.56
2014 Fang M, Lin H, Cheung HY, Xiu F, Shen L, Yip S, Pun EY, Wong CY, Ho JC. Polymer-confined colloidal monolayer: a reusable soft photomask for rapid wafer-scale nanopatterning. Acs Applied Materials & Interfaces. 6: 20837-41. PMID 25375239 DOI: 10.1021/am505221g  0.56
2014 Guo N, Hu W, Liao L, Yip S, Ho JC, Miao J, Zhang Z, Zou J, Jiang T, Wu S, Chen X, Lu W. Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature. Advanced Materials (Deerfield Beach, Fla.). 26: 8203-9. PMID 25352322 DOI: 10.1002/adma.201403664  0.56
2014 Yang ZX, Han N, Fang M, Lin H, Cheung HY, Yip S, Wang EJ, Hung T, Wong CY, Ho JC. Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires. Nature Communications. 5: 5249. PMID 25319499 DOI: 10.1038/ncomms6249  0.56
2014 Han N, Wang F, Yang Z, Yip S, Dong G, Lin H, Fang M, Hung T, Ho JC. Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition. Nanoscale Research Letters. 9: 347. PMID 25114641 DOI: 10.1186/1556-276X-9-347  0.56
2014 Zhang M, Wang F, Wang C, Wang Y, Yip S, Ho JC. Formation mechanisms for the dominant kinks with different angles in InP nanowires. Nanoscale Research Letters. 9: 211. PMID 24910572 DOI: 10.1186/1556-276X-9-211  0.56
2014 Miao J, Hu W, Guo N, Lu Z, Zou X, Liao L, Shi S, Chen P, Fan Z, Ho JC, Li TX, Chen XS, Lu W. Single InAs nanowire room-temperature near-infrared photodetectors. Acs Nano. 8: 3628-35. PMID 24592971 DOI: 10.1021/nn500201g  0.48
2014 Lin H, Xiu F, Fang M, Yip S, Cheung HY, Wang F, Han N, Chan KS, Wong CY, Ho JC. Rational design of inverted nanopencil arrays for cost-effective, broadband, and omnidirectional light harvesting. Acs Nano. 8: 3752-60. PMID 24579981 DOI: 10.1021/nn500418x  0.56
2013 Yang ZX, Wang F, Han N, Lin H, Cheung HY, Fang M, Yip S, Hung T, Wong CY, Ho JC. Crystalline GaSb nanowires synthesized on amorphous substrates: from the formation mechanism to p-channel transistor applications. Acs Applied Materials & Interfaces. 5: 10946-52. PMID 24107082 DOI: 10.1021/am403161t  0.56
2013 Yang ZX, Han N, Wang F, Cheung HY, Shi X, Yip S, Hung T, Lee MH, Wong CY, Ho JC. Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors. Nanoscale. 5: 9671-6. PMID 24056889 DOI: 10.1039/c3nr03080f  0.56
2013 Han N, Hou JJ, Wang F, Yip S, Yen YT, Yang ZX, Dong G, Hung T, Chueh YL, Ho JC. GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties. Acs Nano. 7: 9138-46. PMID 24016352 DOI: 10.1021/nn403767j  0.48
2013 Han N, Wang F, Hou JJ, Yip SP, Lin H, Xiu F, Fang M, Yang Z, Shi X, Dong G, Hung TF, Ho JC. Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors. Advanced Materials (Deerfield Beach, Fla.). 25: 4445-51. PMID 23784849 DOI: 10.1002/adma.201301362  0.56
2013 Chen SY, Wang CY, Ford AC, Chou JC, Wang YC, Wang FY, Ho JC, Wang HC, Javey A, Gan JY, Chen LJ, Chueh YL. Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors. Physical Chemistry Chemical Physics : Pccp. 15: 2654-9. PMID 23340577 DOI: 10.1039/c2cp44213b  0.56
2013 Han N, Ho JC. One-Dimensional Nanomaterials for Energy Applications Nanocrystalline Materials: Their Synthesis-Structure-Property Relationships and Applications. 75-120. DOI: 10.1016/B978-0-12-407796-6.00003-8  0.56
2013 Fan Z, Ho JC, Huang B. One-Dimensional Nanostructures for Energy Harvesting One-Dimensional Nanostructures: Principles and Applications. 237-270. DOI: 10.1002/9781118310342.ch11  0.56
2012 Han N, Hou JJ, Wang F, Yip S, Lin H, Fang M, Xiu F, Shi X, Hung T, Ho JC. Large-scale and uniform preparation of pure-phase wurtzite GaAs NWs on non-crystalline substrates. Nanoscale Research Letters. 7: 632. PMID 23171521 DOI: 10.1186/1556-276X-7-632  0.56
2012 Hou JJ, Wang F, Han N, Xiu F, Yip S, Fang M, Lin H, Hung TF, Ho JC. Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires. Acs Nano. 6: 9320-5. PMID 23020254 DOI: 10.1021/nn304174g  0.56
2012 Han N, Wang F, Hou JJ, Xiu F, Yip S, Hui AT, Hung T, Ho JC. Controllable p-n switching behaviors of GaAs nanowires via an interface effect. Acs Nano. 6: 4428-33. PMID 22519669 DOI: 10.1021/nn3011416  0.56
2012 Hou JJ, Han N, Wang F, Xiu F, Yip S, Hui AT, Hung T, Ho JC. Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices. Acs Nano. 6: 3624-30. PMID 22443352 DOI: 10.1021/nn300966j  0.56
2011 Liu CH, Chen SY, Chen CY, He JH, Chen LJ, Ho JC, Chueh YL. Kinetic growth of self-formed In2O3 nanodots via phase segregation: Ni/InAs system. Acs Nano. 5: 6637-42. PMID 21780832 DOI: 10.1021/nn202109u  0.48
2011 Wang FY, Yang QD, Xu G, Lei NY, Tsang YK, Wong NB, Ho JC. Highly active and enhanced photocatalytic silicon nanowire arrays. Nanoscale. 3: 3269-76. PMID 21717011 DOI: 10.1039/c1nr10266d  0.56
2011 Han N, Wang F, Hui AT, Hou JJ, Shan G, Xiu F, Hung T, Ho JC. Facile synthesis and growth mechanism of Ni-catalyzed GaAs nanowires on non-crystalline substrates. Nanotechnology. 22: 285607. PMID 21654028 DOI: 10.1088/0957-4484/22/28/285607  0.56
2011 Fan Z, Ho JC. Self-assembly of one-dimensional nanomaterials for cost-effective photovoltaics International Journal of Nanoparticles. 4: 164-183. DOI: 10.1504/IJNP.2011.040507  0.56
2010 Takei K, Takahashi T, Ho JC, Ko H, Gillies AG, Leu PW, Fearing RS, Javey A. Nanowire active-matrix circuitry for low-voltage macroscale artificial skin. Nature Materials. 9: 821-6. PMID 20835235 DOI: 10.1038/nmat2835  0.56
2010 Chueh YL, Boswell CN, Yuan CW, Shin SJ, Takei K, Ho JC, Ko H, Fan Z, Haller EE, Chrzan DC, Javey A. Nanoscale structural engineering via phase segregation: Au-Ge system. Nano Letters. 10: 393-7. PMID 20050674 DOI: 10.1021/nl902597m  0.56
2010 Ford AC, Chuang S, Ho JC, Chueh YL, Fan Z, Javey A. Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn. Nano Letters. 10: 509-13. PMID 20044838 DOI: 10.1021/nl903322s  0.56
2010 Ko H, Zhang Z, Ho JC, Takei K, Kapadia R, Chueh YL, Cao W, Cruden BA, Javey A. Flexible carbon-nanofiber connectors with anisotropic adhesion properties. Small (Weinheim An Der Bergstrasse, Germany). 6: 22-6. PMID 19937609 DOI: 10.1002/smll.200901867  0.56
2009 Fan Z, Razavi H, Do JW, Moriwaki A, Ergen O, Chueh YL, Leu PW, Ho JC, Takahashi T, Reichertz LA, Neale S, Yu K, Wu M, Ager JW, Javey A. Three-dimensional nanopillar-array photovoltaics on low-cost and flexible substrates. Nature Materials. 8: 648-53. PMID 19578336 DOI: 10.1038/nmat2493  0.56
2009 Takahashi T, Takei K, Ho JC, Chueh YL, Fan Z, Javey A. Monolayer resist for patterned contact printing of aligned nanowire arrays. Journal of the American Chemical Society. 131: 2102-3. PMID 19173560 DOI: 10.1021/ja8099954  0.56
2009 Ho JC, Yerushalmi R, Smith G, Majhi P, Bennett J, Halim J, Faifer VN, Javey A. Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing. Nano Letters. 9: 725-30. PMID 19161334 DOI: 10.1021/nl8032526  0.56
2009 Ford AC, Ho JC, Chueh YL, Tseng YC, Fan Z, Guo J, Bokor J, Javey A. Diameter-dependent electron mobility of InAs nanowires. Nano Letters. 9: 360-5. PMID 19143505 DOI: 10.1021/nl803154m  0.52
2008 Chueh YL, Ford AC, Ho JC, Jacobson ZA, Fan Z, Chen CY, Chou LJ, Javey A. Formation and characterization of NixInAs/InAs nanowire heterostructures by solid source reaction. Nano Letters. 8: 4528-33. PMID 19367855 DOI: 10.1021/nl802681x  0.56
2008 Fan Z, Ho JC, Jacobson ZA, Razavi H, Javey A. Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry. Proceedings of the National Academy of Sciences of the United States of America. 105: 11066-70. PMID 18685094 DOI: 10.1073/pnas.0801994105  0.56
2008 Yerushalmi R, Ho JC, Fan Z, Javey A. Phosphine oxide monolayers on SiO2 surfaces. Angewandte Chemie (International Ed. in English). 47: 4440-2. PMID 18461577 DOI: 10.1002/anie.200800737  0.56
2008 Ho JC, Yerushalmi R, Jacobson ZA, Fan Z, Alley RL, Javey A. Controlled nanoscale doping of semiconductors via molecular monolayers. Nature Materials. 7: 62-7. PMID 17994026 DOI: 10.1038/nmat2058  0.56
2008 Fan Z, Ho JC, Jacobson ZA, Yerushalmi R, Alley RL, Razavi H, Javey A. Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing. Nano Letters. 8: 20-5. PMID 17696563 DOI: 10.1021/nl071626r  0.56
2007 Yerushalmi R, Ho JC, Jacobson ZA, Javey A. Generic nanomaterial positioning by carrier and stationary phase design. Nano Letters. 7: 2764-8. PMID 17661524 DOI: 10.1021/nl071271b  0.56
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