Steven Chuang, Ph.D. - Publications

2014 Electrical Engineering University of California, Berkeley, Berkeley, CA 
Electronics and Electrical Engineering

11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Chen K, Kapadia R, Harker A, Desai S, Seuk Kang J, Chuang S, Tosun M, Sutter-Fella CM, Tsang M, Zeng Y, Kiriya D, Hazra J, Madhvapathy SR, Hettick M, Chen YZ, et al. Direct growth of single-crystalline III-V semiconductors on amorphous substrates. Nature Communications. 7: 10502. PMID 26813257 DOI: 10.1038/ncomms10502  0.4
2015 Wang K, Yi C, Liu C, Hu X, Chuang S, Gong X. Effects of magnetic nanoparticles and external magnetostatic field on the bulk heterojunction polymer solar cells. Scientific Reports. 5: 9265. PMID 25783755 DOI: 10.1038/srep09265  0.4
2015 Ha TJ, Chen K, Chuang S, Yu KM, Kiriya D, Javey A. Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films. Nano Letters. 15: 392-7. PMID 25437145 DOI: 10.1021/nl5037098  0.4
2014 McDonnell S, Azcatl A, Addou R, Gong C, Battaglia C, Chuang S, Cho K, Javey A, Wallace RM. Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments. Acs Nano. 8: 6265-72. PMID 24797712 DOI: 10.1021/nn501728w  0.4
2014 Tosun M, Chuang S, Fang H, Sachid AB, Hettick M, Lin Y, Zeng Y, Javey A. High-gain inverters based on WSe2 complementary field-effect transistors. Acs Nano. 8: 4948-53. PMID 24684575 DOI: 10.1021/nn5009929  0.48
2014 Chuang S, Battaglia C, Azcatl A, McDonnell S, Kang JS, Yin X, Tosun M, Kapadia R, Fang H, Wallace RM, Javey A. MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts. Nano Letters. 14: 1337-42. PMID 24568656 DOI: 10.1021/nl4043505  0.4
2013 Chuang S, Gao Q, Kapadia R, Ford AC, Guo J, Javey A. Ballistic InAs nanowire transistors. Nano Letters. 13: 555-8. PMID 23256503 DOI: 10.1021/nl3040674  0.4
2012 Fang H, Chuang S, Chang TC, Takei K, Takahashi T, Javey A. High-performance single layered WSe₂ p-FETs with chemically doped contacts. Nano Letters. 12: 3788-92. PMID 22697053 DOI: 10.1021/nl301702r  0.48
2012 Takei K, Madsen M, Fang H, Kapadia R, Chuang S, Kim HS, Liu CH, Plis E, Nah J, Krishna S, Chueh YL, Guo J, Javey A. Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors. Nano Letters. 12: 2060-6. PMID 22409386 DOI: 10.1021/nl300228b  0.48
2010 Ko H, Takei K, Kapadia R, Chuang S, Fang H, Leu PW, Ganapathi K, Plis E, Kim HS, Chen SY, Madsen M, Ford AC, Chueh YL, Krishna S, Salahuddin S, et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature. 468: 286-9. PMID 21068839 DOI: 10.1038/nature09541  0.4
2010 Ford AC, Chuang S, Ho JC, Chueh YL, Fan Z, Javey A. Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn. Nano Letters. 10: 509-13. PMID 20044838 DOI: 10.1021/nl903322s  0.48
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