Steven Chuang, Ph.D. - Publications

2014 Electrical Engineering University of California, Berkeley, Berkeley, CA, United States 
Electronics and Electrical Engineering

15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Chen K, Kapadia R, Harker A, Desai S, Seuk Kang J, Chuang S, Tosun M, Sutter-Fella CM, Tsang M, Zeng Y, Kiriya D, Hazra J, Madhvapathy SR, Hettick M, Chen YZ, et al. Direct growth of single-crystalline III-V semiconductors on amorphous substrates. Nature Communications. 7: 10502. PMID 26813257 DOI: 10.1038/Ncomms10502  0.564
2015 Ha TJ, Chen K, Chuang S, Yu KM, Kiriya D, Javey A. Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films. Nano Letters. 15: 392-7. PMID 25437145 DOI: 10.1021/Nl5037098  0.622
2014 McDonnell S, Azcatl A, Addou R, Gong C, Battaglia C, Chuang S, Cho K, Javey A, Wallace RM. Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments. Acs Nano. 8: 6265-72. PMID 24797712 DOI: 10.1021/Nn501728W  0.717
2014 Tosun M, Chuang S, Fang H, Sachid AB, Hettick M, Lin Y, Zeng Y, Javey A. High-gain inverters based on WSe2 complementary field-effect transistors. Acs Nano. 8: 4948-53. PMID 24684575 DOI: 10.1021/Nn5009929  0.661
2014 Chuang S, Battaglia C, Azcatl A, McDonnell S, Kang JS, Yin X, Tosun M, Kapadia R, Fang H, Wallace RM, Javey A. MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts. Nano Letters. 14: 1337-42. PMID 24568656 DOI: 10.1021/Nl4043505  0.73
2013 Chuang S, Gao Q, Kapadia R, Ford AC, Guo J, Javey A. Ballistic InAs nanowire transistors. Nano Letters. 13: 555-8. PMID 23256503 DOI: 10.1021/Nl3040674  0.544
2013 Chuang S, Kapadia R, Fang H, Chia Chang T, Yen WC, Chueh YL, Javey A. Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes Applied Physics Letters. 102. DOI: 10.1063/1.4809815  0.604
2012 Fang H, Chuang S, Chang TC, Takei K, Takahashi T, Javey A. High-performance single layered WSe₂ p-FETs with chemically doped contacts. Nano Letters. 12: 3788-92. PMID 22697053 DOI: 10.1021/Nl301702R  0.733
2012 Takei K, Madsen M, Fang H, Kapadia R, Chuang S, Kim HS, Liu CH, Plis E, Nah J, Krishna S, Chueh YL, Guo J, Javey A. Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors. Nano Letters. 12: 2060-6. PMID 22409386 DOI: 10.1021/Nl300228B  0.664
2012 Fang H, Chuang S, Takei K, Kim HS, Plis E, Liu CH, Krishna S, Chueh YL, Javey A. Ultrathin-body high-mobility InAsSb-on-insulator field-effect transistors Ieee Electron Device Letters. 33: 504-506. DOI: 10.1109/Led.2012.2185477  0.664
2011 Kapadia R, Takei K, Ford AC, Fang H, Chuang S, Madsen M, Krishna S, Javey A. Ultra-thin compound semiconductor on insulator (XOI) for MOSFETs and TFETs Device Research Conference - Conference Digest, Drc. 13-16. DOI: 10.1109/DRC.2011.5994400  0.629
2011 Takei K, Chuang S, Fang H, Kapadia R, Liu C, Nah J, Sul Kim H, Plis E, Krishna S, Chueh Y, Javey A. Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness Applied Physics Letters. 99: 103507. DOI: 10.1063/1.3636110  0.603
2011 Ford AC, Yeung CW, Chuang S, Kim HS, Plis E, Krishna S, Hu C, Javey A. Ultrathin body InAs tunneling field-effect transistors on Si substrates Applied Physics Letters. 98: 113105. DOI: 10.1063/1.3567021  0.668
2010 Ko H, Takei K, Kapadia R, Chuang S, Fang H, Leu PW, Ganapathi K, Plis E, Kim HS, Chen SY, Madsen M, Ford AC, Chueh YL, Krishna S, Salahuddin S, et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature. 468: 286-9. PMID 21068839 DOI: 10.1038/Nature09541  0.728
2010 Ford AC, Chuang S, Ho JC, Chueh YL, Fan Z, Javey A. Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn. Nano Letters. 10: 509-13. PMID 20044838 DOI: 10.1021/Nl903322S  0.71
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