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Stephanie Tomasulo, Ph.D. - Publications

Affiliations: 
2014 Yale University, New Haven, CT 
Area:
Electronics and Electrical Engineering
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38 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Canedy CL, Bewley WW, Tomasulo S, Kim CS, Merritt CD, Vurgaftman I, Meyer JR, Kim M, Rotter TJ, Balakrishnan G, Golding TD. Mid-infrared interband cascade light emitting devices grown on off-axis silicon substrates. Optics Express. 29: 35426-35441. PMID 34808977 DOI: 10.1364/OE.435825  0.362
2020 Tomasulo S, Gonzalez M, Lumb MP, Brown CR, Dicarlo AH, Sellers IR, Vurgaftman I, Meyer JR, Walters RJ, Yakes MK. Effect of molecular beam epitaxy growth conditions on phase separation in wide-bandgap InAlAsSb lattice-matched to InP Journal of Crystal Growth. 548: 125826. DOI: 10.1016/J.Jcrysgro.2020.125826  0.441
2019 Nolde JA, Jackson EM, Kim M, Kim CS, Canedy CL, Warren MV, Tomasulo S, Affouda CA, Cleveland ER, Vurgaftman I, Meyer JR, Aifer EH. Temperature dependence of quantum efficiency enhancement using plasmonic gratings on nBn detectors with thin absorbers Journal of Nanophotonics. 13: 1. DOI: 10.1117/1.Jnp.13.046007  0.417
2019 Nolde JA, Jackson EM, Warren MV, Canedy CL, Tomasulo S, Bennett MF, Kim M, Cleveland ER, Kim CS, Affouda CA, Ellis CT, Vurgaftman I, Meyer JR, Aifer EH. Back Surface Plasmonic Grating for Increased Quantum Efficiency of nBn Photodetectors With Ultra-Thin Metamorphic InAs0.8Sb0.2 Absorber Ieee Journal of Quantum Electronics. 55: 1-11. DOI: 10.1109/Jqe.2019.2896885  0.399
2018 Tomasulo S, Affouda CA, Mahadik NA, Twigg ME, Yakes MK, Aifer EH. Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36. DOI: 10.1116/1.5017982  0.429
2018 Schmieder KJ, Lumb MP, Bennett MF, Tomasulo S, Yakes MK, Mack S, Moore JE, Walters RJ. Photovoltaics on Transfer Printed III-V Virtual Substrates Ieee Journal of Photovoltaics. 8: 1641-1646. DOI: 10.1109/Jphotov.2018.2871573  0.411
2018 Sohr P, Wei D, Tomasulo S, Yakes MK, Law S. Simultaneous Large Mode Index and High Quality Factor in Infrared Hyperbolic Metamaterials Acs Photonics. 5: 4003-4008. DOI: 10.1021/Acsphotonics.8B01097  0.418
2017 Hirst LC, Kotulak NA, Tomasulo S, Abell J, González M, Yakes MK, Meyer JR, Walters RJ, Song CY, Specht P, Ercius P, Kisielowski C. Imaging Atomic Scale Clustering in III-V Semiconductor Alloys. Acs Nano. PMID 28286954 DOI: 10.1021/Acsnano.6B07732  0.381
2017 Affouda CA, Tomasulo S, Nolde JA, Vurgaftman I, Mahadik NA, Jackson EM, Twigg ME, Aifer EH. High absorption long wave infrared superlattices using metamorphic buffers Applied Physics Letters. 110: 181107. DOI: 10.1063/1.4982651  0.382
2017 Baladés N, Herrera M, Sales DL, Delgado FJ, Hernández-Maldonado D, Ramasse QM, Pizarro J, Galindo P, González M, Abell J, Tomasulo S, Walters JR, Molina SI. Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells Applied Surface Science. 395: 98-104. DOI: 10.1016/J.Apsusc.2016.07.094  0.398
2017 Baladés N, Sales DL, Herrera M, Delgado FJ, González M, Clark K, Pinsunkajana P, Hoven N, Hubbard S, Tomasulo S, Walters JR, Molina SI. Effect of annealing on the compositional modulation of InAlAsSb Applied Surface Science. 395: 105-109. DOI: 10.1016/J.Apsusc.2016.06.091  0.449
2016 Baladés N, Herrera M, Sales DL, Fernández N, Delgado FJ, Hernández-Maldonado D, Ramasse Q, González M, Tomasulo S, Abell J, Walters R, Molina SI. HAADF-STEM analysis of the composition distribution in InAlAsSb/InGaAs/InP layers for solar cells applications Microscopy and Microanalysis. 22: 30-31. DOI: 10.1017/S1431927616000349  0.385
2015 Bennett MF, Gonzalez M, Lumb MP, Yakes MK, Schmieder KJ, Tomasulo S, Abell J, Meyer JR, Walters RJ. Development of wet etch processing for InxAl1-xAsySb1-y solar cells grown on InP 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356353  0.376
2015 Sun Y, Montgomery KH, Wang X, Tomasulo S, Lee ML, Bermel P. Modeling wide bandgap GaInP photovoltaic cells for conversion efficiencies up to 16.5% 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356074  0.628
2015 Yakes MK, Schmieder KJ, Lumb MP, Bennett MF, Gonzalez M, Cunningham PD, Khachatrian A, Hirst LC, Tomasulo S, Kotulak NA, Melinger JS, Walters RJ. Evaluation of strained InAlAs as a window layer for wide bandgap materials lattice matched to InP 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356068  0.325
2015 Tomasulo S, Gonzalez M, Tischler JG, Abell J, Lumb MP, Yakes MK, Hirst LC, Delgado-Gonzalez FJ, Herrera M, Molina SI, Vurgaftman I, Meyer JR, Walters RJ. Molecular beam epitaxy of InAlAsSb for the top cell in high-efficiency InP-based lattice-matched triple-junction solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355911  0.481
2015 Masuda T, Tomasulo S, Lang JR, Lee ML. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy Journal of Applied Physics. 117. DOI: 10.1063/1.4914046  0.805
2015 Vaisman M, Tomasulo S, Masuda T, Lang JR, Faucher J, Lee ML. Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4908181  0.761
2015 Goh T, Huang JS, Bielinski EA, Thompson BA, Tomasulo S, Lee ML, Sfeir MY, Hazari N, Taylor AD. Coevaporated bisquaraine inverted solar cells: Enhancement due to energy transfer and open circuit voltage control Acs Photonics. 2: 86-95. DOI: 10.1021/Ph500282Z  0.646
2014 Masuda T, Tomasulo S, Lang JR, Lee ML. Effect of substrate effcut angle on AlGaInP and GaInP solar cells grown by molecular beam epitaxy 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 505-509. DOI: 10.1109/PVSC.2014.6924970  0.693
2014 Tomasulo S, Nay Yaung K, Faucher J, Vaisman M, Lee ML. Metamorphic 2.1-2.2eV InGaP solar cells on GaP substrates Applied Physics Letters. 104. DOI: 10.1063/1.4874615  0.781
2014 Yaung KN, Tomasulo S, Lang JR, Faucher J, Lee ML. Defect selective etching of GaAsyP1-yphotovoltaic materials Journal of Crystal Growth. 404: 140-145. DOI: 10.1016/J.Jcrysgro.2014.07.005  0.711
2013 Huang JS, Goh T, Li X, Sfeir MY, Bielinski EA, Tomasulo S, Lee ML, Hazari N, Taylor AD. Improving the performance of P3HT/PCBM solar cells with squaraine dye Proceedings of Spie - the International Society For Optical Engineering. 8830. DOI: 10.1117/12.2023447  0.598
2013 Tomasulo S, Faucher J, Lang JR, Yaung KN, Lee ML. 2.19 eV InGaP solar cells on GaP substrates Conference Record of the Ieee Photovoltaic Specialists Conference. 3324-3328. DOI: 10.1109/PVSC.2013.6745162  0.85
2013 Lang JR, Faucher J, Tomasulo S, Yaung KN, Lee ML. GaAsP solar cells on GaP/Si grown by molecular beam epitaxy Conference Record of the Ieee Photovoltaic Specialists Conference. 2100-2104. DOI: 10.1109/PVSC.2013.6744888  0.836
2013 Faucher J, Gerger A, Tomasulo S, Ebert C, Lochtefeld A, Barnett A, Lee ML. Single-junction GaAsP solar cells grown on SiGe graded buffers on Si Applied Physics Letters. 103. DOI: 10.1063/1.4828879  0.833
2013 Lang JR, Faucher J, Tomasulo S, Nay Yaung K, Larry Lee M. Comparison of GaAsP solar cells on GaP and GaP/Si Applied Physics Letters. 103. DOI: 10.1063/1.4819456  0.829
2013 Huang JS, Goh T, Li X, Sfeir MY, Bielinski EA, Tomasulo S, Lee ML, Hazari N, Taylor AD. Polymer bulk heterojunction solar cells employing Förster resonance energy transfer Nature Photonics. 7: 479-485. DOI: 10.1038/Nphoton.2013.82  0.619
2012 Shin JC, Mohseni PK, Yu KJ, Tomasulo S, Montgomery KH, Lee ML, Rogers JA, Li X. Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement. Acs Nano. 6: 11074-9. PMID 23128184 DOI: 10.1021/Nn304784Y  0.691
2012 Tomasulo S, Yaung KN, Simon J, Lee ML. Growth of metamorphic GaAsP solar cells on GaP Conference Record of the Ieee Photovoltaic Specialists Conference. 1692-1697. DOI: 10.1109/PVSC.2012.6317921  0.397
2012 Tomasulo S, Yaung KN, Lee ML. Metamorphic GaAsP and InGaP solar cells on GaAs Ieee Journal of Photovoltaics. 2: 56-61. DOI: 10.1109/Jphotov.2011.2177640  0.811
2012 Tomasulo S, Nay Yaung K, Simon J, Lee ML. GaAsP solar cells on GaP substrates by molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4738373  0.793
2011 Tomasulo S, Simon J, Simmonds PJ, Biagiotti J, Lee ML. Molecular beam epitaxy of metamorphic InyGa1-yP solar cells on mixed anion GaAsx P1-x/GaAs graded buffers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3559119  0.772
2011 Simon J, Tomasulo S, Simmonds PJ, Romero M, Lee ML. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells Journal of Applied Physics. 109. DOI: 10.1063/1.3525599  0.823
2010 Simon J, Tomasulo S, Simmonds P, Romero MJ, Lee ML. Growth of Metamorphic InGaP for Wide-Bandgap Photovoltaic Junction by MBE Mrs Proceedings. 1268. DOI: 10.1557/Proc-1268-Ee06-04  0.806
2010 Simon J, Tomasulo S, Simmonds PJ, Romero M, Lee ML. Metamorphic InGaP on GaAs and GaP for wide-bandgap photovoltaic junctions Conference Record of the Ieee Photovoltaic Specialists Conference. 2106-2110. DOI: 10.1109/PVSC.2010.5616304  0.774
2009 Wetzel C, Li Y, Senawiratne J, Zhu M, Xia Y, Tomasulo S, Persans PD, Liu L, Hanser D, Detchprohm T. Characterization of GaInN/GaN layers for green emitting laser diodes Journal of Crystal Growth. 311: 2942-2947. DOI: 10.1016/J.Jcrysgro.2009.01.067  0.397
2007 Senawiratne J, Tomasulo S, Detchprohm T, Zhu M, Li Y, Zhao W, Xia Y, Zhang Z, Persans P, Wetzel C. Superluminescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation Mrs Proceedings. 1040. DOI: 10.1557/Proc-1040-Q05-05  0.336
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