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Richard J. Matyi - Publications

Affiliations: 
1988-2000 Materials Science and Engineering University of Wisconsin, Madison, Madison, WI 
 2000-2004 National Institute of Standards and Technology, Gaithersburg, MD, United States 
 2004- Nanoscale Science and Engineering-Nanoscale Science State University of New York, Albany, Albany, NY, United States 
Area:
Nanoscience, Nanotechnology, Materials Science Engineering
Website:
https://nanohub.org/members/31401
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48 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Matyi R. Integrating undergraduate interns into an X-ray diffraction infrastructure Acta Crystallographica Section a Foundations and Advances. 73: a55-a55. DOI: 10.1107/S0108767317099457  0.31
2015 Narasimham AJ, Green A, Matyi RJ, Khare P, Vo T, Diebold A, LaBella VP. Pulsed-N2 assisted growth of 5-20 nm thick β-W films Aip Advances. 5. DOI: 10.1063/1.4935372  0.318
2014 Reese TA, Schujman SB, Matyi RJ. Structure evolution in CIGS deposition: An X-ray diffraction analysis with Rietveld whole-pattern refinement 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1691-1695. DOI: 10.1109/PVSC.2014.6925246  0.325
2014 Narasimham AJ, Medikonda M, Matsubayashi A, Khare P, Chong H, Matyi RJ, Diebold A, Labella VP. Fabrication of 5-20 nm thick β -W films Aip Advances. 4. DOI: 10.1063/1.4903165  0.301
2013 Shreeman PK, Dunn KA, Novak SW, Matyi RJ. Modified statistical dynamical diffraction theory: analysis of model SiGe heterostructures. Journal of Applied Crystallography. 46: 912-918. PMID 24046498 DOI: 10.1107/S0021889813011308  0.75
2013 Settens C, Bunday B, Thiel B, Kline RJ, Sunday D, Wang C, Wu W, Matyi R. Critical dimension small angle X-ray scattering measurements of FinFET and 3D memory structures Proceedings of Spie. 8681. DOI: 10.1117/12.2012019  0.316
2011 Shreeman PK, Matyi RJ. Application of statistical dynamical diffraction theory to highly defective ion implanted SiGe heterostructures Physica Status Solidi (a) Applications and Materials Science. 208: 2533-2538. DOI: 10.1002/pssa.201184250  0.747
2010 Shreeman PK, Matyi RJ. Implementation of statistical dynamic diffraction theory for defective semiconductor heterostructure modelling Journal of Applied Crystallography. 43: 550-559. DOI: 10.1107/S0021889810009143  0.749
2009 Shreeman PK, Matyi RJ. Application of statistical dynamical X-ray diffraction theory to defective semiconductor heterostructures Aip Conference Proceedings. 1173: 385-389. DOI: 10.1063/1.3251255  0.755
2009 Settens CM, Kamineni VK, Antonelli GA, Grill A, Diebold AC, Matyi RJ. X-ray scattering methods for porosity metrology of low-k thin films Aip Conference Proceedings. 1173: 163-167. DOI: 10.1063/1.3251214  0.329
2008 Hassanein E, Higgins C, Naulleau P, Matyi R, Gallatin G, Denbeaux G, Antohe A, Thackeray J, Spear K, Szmanda C, Anderson CN, Niakoula D, Malloy M, Khurshid A, Montgomery C, et al. Film quantum yields of EUV & ultra-high PAG photoresists Proceedings of Spie - the International Society For Optical Engineering. 6921. DOI: 10.1117/12.774099  0.323
2008 Colombi P, Agnihotri DK, Asadchikov VE, Bontempi E, Bowen DK, Chang CH, Depero LE, Farnworth M, Fujimoto T, Gibaud A, Jergel M, Krumrey M, Lafford TA, Lamperti A, Ma T, ... Matyi RJ, et al. Reproducibility in X-ray reflectometry: Results from the first world-wide round-robin experiment Journal of Applied Crystallography. 41: 143-152. DOI: 10.1107/S0021889807051904  0.337
2007 Matyi RJ, Jamil M, Shahedipour-Sandvik F. High resolution X-ray diffraction analyses of ion-implanted GaN/AlN/Si heterostructures Physica Status Solidi (a) Applications and Materials Science. 204: 2598-2605. DOI: 10.1002/Pssa.200675683  0.318
2003 Matyi RJ. High resolution X-ray reflectometry: Theory, practice, accuracy and precision Proceedings of Spie - the International Society For Optical Engineering. 5133: 440-454.  0.388
2002 Matyi RJ, Volz HM. Analysis of radiation damage in lysozyme crystals with high resolution triple axis x-ray diffraction Materials Research Society Symposium - Proceedings. 711: 19-24.  0.318
2001 Volz HM, Matyi RJ. A high resolution triple axis X-ray diffraction analysis of radiation damage in lysozyme crystals Journal of Crystal Growth. 232: 502-510. DOI: 10.1016/S0022-0248(01)01089-2  0.313
2001 Matyi RJ, Volz HM. Triple-axis x-ray diffraction analyses of hen egg-white lysozyme crystals Journal of Physics D: Applied Physics. 34.  0.386
2000 Volz HM, Matyi RJ. Triple-axis X-ray diffraction analyses of lysozyme crystals Acta Crystallographica Section D: Biological Crystallography. 56: 881-889. PMID 10930834 DOI: 10.1107/S090744490000593X  0.409
2000 Dunn KA, Babcock SE, Stone DS, Matyi RJ, Zhang L, Kuech TF. Dislocation arrangement in a thick LEO GaN film on sapphire Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S1092578300004130  0.324
2000 Su C, Dudley M, Matyi R, Feth S, Lehoczky S. Characterizations of ZnSe single crystals grown by physical vapor transport Journal of Crystal Growth. 208: 237-247. DOI: 10.1016/S0022-0248(99)00500-X  0.339
2000 Matyi RJ, Moran PD, Hagquist WWD, Volz HM. Alignment system for crossed parabolic x-ray mirrors Review of Scientific Instruments. 71: 2292-2295.  0.645
2000 Moran PD, Hansen DM, Matyi RJ, Mawst LJ, Kuech TF. Experimental test for elastic compliance during growth on glass-bonded compliant substrates Applied Physics Letters. 76: 2541-2543.  0.609
1999 Moran PD, Hansen DM, Matyi RJ, Redwing JM, Kuech TF. Realization and characterization of ultrathin GaAs-on-insulator structures Journal of the Electrochemical Society. 146: 3506-3509. DOI: 10.1149/1.1392505  0.641
1999 Matyi RJ, Doolittle WA, Brown AS. High resolution x-ray diffraction analyses of GaN/LiGaO2 Journal of Physics D: Applied Physics. 32: A61-A64. DOI: 10.1088/0022-3727/32/10A/313  0.349
1999 Su CH, Feth S, Volz MP, Matyi R, George MA, Chattopadhyay K, Burger A, Lehoczky SL. Vapor growth and characterization of Cr-doped ZnSe crystals Journal of Crystal Growth. 207: 35-42. DOI: 10.1016/S0022-0248(99)00358-9  0.308
1999 Volz HM, Matyi RJ. High-resolution X-ray diffraction analyses of protein crystals Philosophical Transactions of the Royal Society a: Mathematical, Physical and Engineering Sciences. 357: 2789-2799.  0.336
1999 Moran PD, Hansen DM, Matyi RJ, Cederberg JG, Mawst LJ, Kuech TF. InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality Applied Physics Letters. 75: 1559-1561.  0.641
1999 Matyi RJ, Doolittle WA, Brown AS. High resolution X-ray diffraction analyses of GaN/LiGaO2 Journal of Physics D: Applied Physics. 32.  0.353
1998 Hansen DM, Moran PD, Dunn KA, Babcock SE, Matyi RJ, Kuech TF. Development of a glass-bonded compliant substrate Journal of Crystal Growth. 195: 144-150. DOI: 10.1016/S0022-0248(98)00579-X  0.624
1996 Perkins NR, Horton MN, Zhi D, Matyi RJ, Bandic ZZ, McGill TC, Kuech TF. Nucleation and growth of gallium nitride films on Si and sapphire substrates using buffer layers Materials Research Society Symposium - Proceedings. 423: 287-292. DOI: 10.1557/Proc-423-287  0.358
1996 Matyi RJ, Zhi D, Perkins NR, Horton MN, Kuech TF. High resolution X-ray diffraction analysis of gallium nitride grown on sapphire by halide vapor phase epitaxy Materials Research Society Symposium - Proceedings. 423: 239-244.  0.329
1995 Matyi RJ, Melloch MR, Zhang K, Miiler DL. Structural characterization of gaas grown at low temperatures by molecular beam epitaxy Journal of Physics D: Applied Physics. 28: A139-A143. DOI: 10.1088/0022-3727/28/4A/027  0.372
1994 Wang VS, Matyi RJ, Nordheden KJ. Triple-crystal x-ray diffraction analysis of reactive ion etched gallium arsenide Journal of Applied Physics. 75: 3835-3841. DOI: 10.1063/1.356062  0.364
1994 Wade JK, Moran PD, Gillespie HJ, Crook GE, Matyi RJ. Stability of GaAs/Si superlattices during MBE growth and post-growth annealing Materials Research Society Symposium Proceedings. 326: 133-138.  0.608
1994 Matyi RJ, Chapek DL, Conrad JR, Felch SB. Structural analysis of silicon doped by plasma source ion implantation Materials Research Society Symposium Proceedings. 316: 1017-1022.  0.39
1993 Wang VS, Matyi RJ, Nordheden KJ. Characterization of Reactive Ion Etch Damage in GaAs by Triple Crystal X-Ray Diffraction Mrs Proceedings. 324. DOI: 10.1557/PROC-324-445  0.363
1993 Moran PD, Matyi RJ. On the X‐ray reflectivity of absorbing crystals Acta Crystallographica Section A. 49: 330-335. DOI: 10.1107/S0108767392009012  0.581
1993 Gillespie HJ, Wade JK, Crook GE, Matyi RJ. High resolution x-ray diffraction analysis of Si/GaAs superlattices Journal of Applied Physics. 73: 95-102. DOI: 10.1063/1.353836  0.434
1993 Matyi RJ, Melloch MR, Woodall JM. Structural analysis of as-deposited and annealed low-temperature gallium arsenide Journal of Crystal Growth. 129: 719-727. DOI: 10.1016/0022-0248(93)90508-T  0.36
1992 Matyi R, Gillespie H, Crook G, Wade J. Molecular Beam Epitaxy Growth and Structural Characterization of Si/GaAs Superlattices Mrs Proceedings. 263. DOI: 10.1557/PROC-263-65  0.366
1992 Moran PD, Matyi RJ. Effect of absorption on the integrated reflectivity of defective single crystals Journal of Applied Crystallography. 25: 358-365. DOI: 10.1107/S0021889891014048  0.715
1992 Wang VS, Matyi RJ. Triple crystal x-ray diffraction analysis of chemical-mechanical polished gallium arsenide Journal of Applied Physics. 72: 5158-5164. DOI: 10.1063/1.351995  0.344
1992 Gillespie HJ, Crook GE, Matyi RJ. Growth of Si/GaAs superlattices by molecular beam epitaxy Applied Physics Letters. 60: 721-723. DOI: 10.1063/1.107437  0.343
1992 Matyi RJ, Melloch MR, Woodall JM. High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide Applied Physics Letters. 60: 2642-2644. DOI: 10.1063/1.106881  0.332
1990 Duncan WM, Matyi RJ, Shichijo H, Kao YC, Liu HY. Micro-Raman characterization of structural defects in patterned GaAs-on-Si Applied Physics Letters. 57: 1631-1633. DOI: 10.1063/1.104070  0.314
1988 Matyi RJ, Lee JW, Schaake HF. Substrate orientation and processing effects on GaAs/Si misorientation in GaAs-on-Si grown by MBE Journal of Electronic Materials. 17: 87-93. DOI: 10.1007/BF02652239  0.3
1986 Moore TM, Matteso S, Duncan WM, Matyi RJ. Microstructural Characterization of GaAs Substrates Mrs Proceedings. 69. DOI: 10.1557/PROC-69-379  0.357
1986 Duncan WM, Lee JW, Matyi RJ, Liu HY. Photoluminescence and x-ray properties of heteroepitaxial gallium arsenide on silicon Journal of Applied Physics. 59: 2161-2164. DOI: 10.1063/1.336353  0.392
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