| Year |
Citation |
Score |
| 2020 |
Ci P, Tian X, Kang J, Salazar A, Eriguchi K, Warkander S, Tang K, Liu J, Chen Y, Tongay S, Walukiewicz W, Miao J, Dubon O, Wu J. Author Correction: Chemical trends of deep levels in van der Waals semiconductors. Nature Communications. 11: 6180. PMID 33243977 DOI: 10.1038/s41467-020-20151-x |
0.471 |
|
| 2020 |
Ci P, Tian X, Kang J, Salazar A, Eriguchi K, Warkander S, Tang K, Liu J, Chen Y, Tongay S, Walukiewicz W, Miao J, Dubon O, Wu J. Chemical trends of deep levels in van der Waals semiconductors. Nature Communications. 11: 5373. PMID 33097722 DOI: 10.1038/s41467-020-19247-1 |
0.53 |
|
| 2019 |
Jaquez M, Specht P, Yu KM, Walukiewicz W, Dubon OD. Amorphous gallium oxide sulfide: A highly mismatched alloy Journal of Applied Physics. 126: 105708. DOI: 10.1063/1.5111985 |
0.44 |
|
| 2018 |
Keqi A, Gehlmann M, Conti G, Nemšák S, Rattanachata A, Minár J, Plucinski L, Rault JE, Rueff JP, Scarpulla M, Hategan M, Pálsson GK, Conlon C, Eiteneer D, Saw AY, ... ... Dubon OD, et al. Electronic structure of the dilute magnetic semiconductor
Ga1−xMnxP
from hard x-ray photoelectron spectroscopy and angle-resolved photoemission Physical Review B. 97. DOI: 10.1103/Physrevb.97.155149 |
0.442 |
|
| 2018 |
Heyman JN, Weiss EM, Rollag JR, Yu KM, Dubon OD, Kuang YJ, Tu CW, Walukiewicz W. THz transient photoconductivity of the III–V dilute nitride GaP y As1−y−x N x Semiconductor Science and Technology. 33: 125009. DOI: 10.1088/1361-6641/Aae7C5 |
0.347 |
|
| 2018 |
Fonseca JJ, Horton MK, Tom K, Yao J, Walukiewicz W, Dubon OD. Structure–Property Relationship of Low-Dimensional Layered GaSexTe1–x Alloys Chemistry of Materials. 30: 4226-4232. DOI: 10.1021/Acs.Chemmater.8B00130 |
0.377 |
|
| 2017 |
Heyman J, Schwartzberg A, Yu K, Luce A, Dubon O, Kuang Y, Tu C, Walukiewicz W. Carrier Lifetimes in aIII−V−NIntermediate-Band Semiconductor Physical Review Applied. 7. DOI: 10.1103/Physrevapplied.7.014016 |
0.341 |
|
| 2017 |
Francis CA, Jaquez M, Sánchez-Royo JF, Farahani SKV, McConville CF, Beeman J, Ting M, Yu KM, Dubón OD, Walukiewicz W. Effects of Nid-levels on the electronic band structure of NixCd1-xO semiconducting alloys Journal of Applied Physics. 122: 185703. DOI: 10.1063/1.4986967 |
0.405 |
|
| 2017 |
Chew AR, Fonseca JJ, Dubon OD, Salleo A. Long-Term Structural Evolution of an Intercalated Layered Semiconductor Advanced Functional Materials. 27: 1605038. DOI: 10.1002/Adfm.201605038 |
0.346 |
|
| 2016 |
Fonseca JJ, Tongay S, Topsakal M, Chew AR, Lin AJ, Ko C, Luce AV, Salleo A, Wu J, Dubon OD. Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air. Advanced Materials (Deerfield Beach, Fla.). PMID 27171481 DOI: 10.1002/Adma.201601151 |
0.561 |
|
| 2016 |
Yu KM, Detert DM, Chen G, Zhu W, Liu C, Grankowska S, Hsu L, Dubon OD, Walukiewicz W. Defects and properties of cadmium oxide based transparent conductors Journal of Applied Physics. 119. DOI: 10.1063/1.4948236 |
0.407 |
|
| 2015 |
Rogge PC, Thürmer K, Foster ME, McCarty KF, Dubon OD, Bartelt NC. Real-time observation of epitaxial graphene domain reorientation. Nature Communications. 6: 6880. PMID 25892219 DOI: 10.1038/Ncomms7880 |
0.781 |
|
| 2015 |
Rogge PC, Nie S, McCarty KF, Bartelt NC, Dubon OD. Orientation-dependent growth mechanisms of graphene islands on Ir(111). Nano Letters. 15: 170-5. PMID 25415329 DOI: 10.1021/Nl503340H |
0.781 |
|
| 2015 |
Rogge PC, Foster ME, Wofford JM, McCarty KF, Bartelt NC, Dubon OD. On the rotational alignment of graphene domains grown on Ge(110) and Ge(111) Mrs Communications. 5: 539-546. DOI: 10.1557/Mrc.2015.63 |
0.772 |
|
| 2015 |
Wełna M, Kudrawiec R, Nabetani Y, Tanaka T, Jaquez M, Dubon OD, Yu KM, Walukiewicz W. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/8/085018 |
0.34 |
|
| 2015 |
Jaquez M, Yu KM, Ting M, Hettick M, Sánchez-Royo JF, Wełna M, Javey A, Dubon OD, Walukiewicz W. Growth and characterization of ZnO1-xSx highly mismatched alloys over the entire composition Journal of Applied Physics. 118. DOI: 10.1063/1.4936551 |
0.447 |
|
| 2015 |
Greenlee JD, Specht P, Anderson TJ, Koehler AD, Weaver BD, Luysberg M, Dubon OD, Kub FJ, Weatherford TR, Hobart KD. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs Applied Physics Letters. 107. DOI: 10.1063/1.4929583 |
0.325 |
|
| 2015 |
Ting M, Dos Reis R, Jaquez M, Dubon OD, Mao SS, Yu KM, Walukiewicz W. Electronic band structure of ZnO-rich highly mismatched ZnO1-xTex alloys Applied Physics Letters. 106. DOI: 10.1063/1.4913840 |
0.451 |
|
| 2015 |
Francis CA, Detert DM, Chen G, Dubon OD, Yu KM, Walukiewicz W. NixCd1-xO: Semiconducting alloys with extreme type III band offsets Applied Physics Letters. 106. DOI: 10.1063/1.4906088 |
0.423 |
|
| 2015 |
Schmucker SW, Cress CD, Culbertson JC, Beeman JW, Dubon OD, Robinson JT. Raman signature of defected twisted bilayer graphene Carbon. 93: 250-257. DOI: 10.1016/J.Carbon.2015.05.076 |
0.604 |
|
| 2015 |
Wofford JM, Nie S, Thürmer K, McCarty KF, Dubon OD. Influence of lattice orientation on growth and structure of graphene on Cu(001) Carbon. 90: 284-290. DOI: 10.1016/J.Carbon.2015.03.056 |
0.779 |
|
| 2014 |
Teklemichael ST, McCluskey MD, Buchowicz G, Dubon OD, Haller EE. Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.165204 |
0.641 |
|
| 2014 |
Kudrawiec R, Luce AV, Gladysiewicz M, Ting M, Kuang YJ, Tu CW, Dubon OD, Yu KM, Walukiewicz W. Electronic band structure of GaNx PyAs1-x-y highly mismatched alloys: Suitability for intermediate-band solar cells Physical Review Applied. 1. DOI: 10.1103/Physrevapplied.1.034007 |
0.413 |
|
| 2014 |
Detert DM, Tom KB, Battaglia C, Denlinger JD, Lim SHN, Javey A, Anders A, Dubon OD, Yu KM, Walukiewicz W. Fermi level stabilization and band edge energies in CdxZn 1-xO alloys Journal of Applied Physics. 115. DOI: 10.1063/1.4884683 |
0.419 |
|
| 2014 |
In JB, Xiang B, Hwang DJ, Ryu SG, Kim E, Yoo JH, Dubon O, Minor AM, Grigoropoulos CP. Generation of single-crystalline domain in nano-scale silicon pillars by near-field short pulsed laser Applied Physics a: Materials Science and Processing. 114: 277-285. DOI: 10.1007/S00339-013-8109-1 |
0.325 |
|
| 2013 |
Ryu SG, Kim E, Yoo JH, Hwang DJ, Xiang B, Dubon OD, Minor AM, Grigoropoulos CP. On demand shape-selective integration of individual vertical germanium nanowires on a Si(111) substrate via laser-localized heating. Acs Nano. 7: 2090-8. PMID 23414075 DOI: 10.1021/Nn400186C |
0.334 |
|
| 2013 |
Levander AX, Yu KM, Novikov SV, Liliental-Weber Z, Foxon CT, Dubon OD, Wu J, Walukiewicz W. Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition range Journal of Applied Physics. 113. DOI: 10.1063/1.4812277 |
0.802 |
|
| 2013 |
Detert DM, Lim SHM, Tom K, Luce AV, Anders A, Dubon OD, Yu KM, Walukiewicz W. Crystal structure and properties of CdxZn1-xO alloys across the full composition range Applied Physics Letters. 102. DOI: 10.1063/1.4809950 |
0.379 |
|
| 2013 |
Yu KM, Sarney WL, Novikov SV, Detert D, Zhao R, Denlinger JD, Svensson SP, Dubon OD, Walukiewicz W, Foxon CT. Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4795446 |
0.409 |
|
| 2013 |
Liliental-Weber Z, Reis RD, Novikov SV, Yu KM, Levander AX, Dubon OD, Wu J, Walukiewicz W, Foxon CT. Microstructure of Mg doped GaNAs alloys Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 453-456. DOI: 10.1002/Pssc.201200666 |
0.789 |
|
| 2012 |
Gray AX, Minár J, Ueda S, Stone PR, Yamashita Y, Fujii J, Braun J, Plucinski L, Schneider CM, Panaccione G, Ebert H, Dubon OD, Kobayashi K, Fadley CS. Bulk electronic structure of the dilute magnetic semiconductor Ga(1-x)Mn(x)As through hard X-ray angle-resolved photoemission. Nature Materials. 11: 957-62. PMID 23064495 DOI: 10.1038/Nmat3450 |
0.634 |
|
| 2012 |
Xiang B, Hwang DJ, In JB, Ryu SG, Yoo JH, Dubon O, Minor AM, Grigoropoulos CP. In situ TEM near-field optical probing of nanoscale silicon crystallization. Nano Letters. 12: 2524-9. PMID 22471760 DOI: 10.1021/Nl3007352 |
0.335 |
|
| 2012 |
Nie S, Bartelt NC, Wofford JM, Dubon OD, McCarty KF, Thürmer K. Scanning tunneling microscopy study of graphene on Au(111): Growth mechanisms and substrate interactions Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.205406 |
0.781 |
|
| 2012 |
Wofford JM, Starodub E, Walter AL, Nie S, Bostwick A, Bartelt NC, Thürmer K, Rotenberg E, McCarty KF, Dubon OD. Extraordinary epitaxial alignment of graphene islands on Au(111) New Journal of Physics. 14. DOI: 10.1088/1367-2630/14/5/053008 |
0.785 |
|
| 2012 |
Chrzan DC, Shin SJ, Guzman J, Yuan CW, Liao CY, Stone PR, Boswell-Koller CN, Sawyer CA, Bustillo KC, Sherburne MP, Conry T, Lieten RR, Dubon OD, Minor AM, Watanabe M, et al. Embedded binary eutectic alloy nanostructures Jom. 64: 1158-1164. DOI: 10.1007/S11837-012-0439-5 |
0.471 |
|
| 2012 |
Novikov SV, Yu KM, Levander AX, Liliental-Weber Z, Dos Reis R, Kent AJ, Tseng A, Dubon OD, Wu J, Denlinger J, Walukiewicz W, Luckert F, Edwards PR, Martin RW, Foxon CT. Molecular beam epitaxy of GaN 1-xBi x alloys with high bismuth content Physica Status Solidi (a) Applications and Materials Science. 209: 419-423. DOI: 10.1002/Pssa.201100312 |
0.809 |
|
| 2011 |
Tanaka T, Yu KM, Levander AX, Dubon OD, Reichertz LA, Lopez N, Nishio M, Walukiewicz W. Demonstration of ZnTe1-xOx intermediate band solar cell Japanese Journal of Applied Physics. 50. DOI: 10.7567/Jjap.50.082304 |
0.76 |
|
| 2011 |
Levander AX, Novikov SV, Liliental-Weber Z, Dos Reis R, Denlinger JD, Wu J, Dubon OD, Foxon CT, Yu KM, Walukiewicz W. Growth and transport properties of p-type GaNBi alloys Journal of Materials Research. 26: 2887-2894. DOI: 10.1557/Jmr.2011.376 |
0.825 |
|
| 2011 |
Tanaka T, Yu KM, Levander AX, Dubon OD, Reichertz LA, Lopez N, Nishio M, Walukiewicz W. Demonstration of ZnTe$_{1-x}$O$_{x}$ Intermediate Band Solar Cell Japanese Journal of Applied Physics. 50: 82304. DOI: 10.1143/Jjap.50.082304 |
0.383 |
|
| 2011 |
Hwang DJ, Ryu SG, Kim E, Yoo JH, Xiang B, Dubon O, Minor AM, Grigoropoulos CP. Laser-assisted nanoprocessing and growth of semiconductor nanostructures Proceedings of Spie - the International Society For Optical Engineering. 8031. DOI: 10.1117/12.882809 |
0.34 |
|
| 2011 |
Tanaka T, Yu KM, Levander AX, Dubon OD, Reichertz LA, Lopez N, Nishio M, Walukiewicz W. Development of intermediate band solar cell based on ZnTe 1-xO x synthesized by oxygen ion implantation Conference Record of the Ieee Photovoltaic Specialists Conference. 002105-002108. DOI: 10.1109/PVSC.2011.6186368 |
0.757 |
|
| 2011 |
Nie S, Wofford JM, Bartelt NC, Dubon OD, McCarty KF. Origin of the mosaicity in graphene grown on Cu(111) Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.155425 |
0.786 |
|
| 2011 |
Lieten RR, Motsnyi V, Zhang L, Cheng K, Leys M, Degroote S, Buchowicz G, Dubon O, Borghs G. Mg doping of GaN by molecular beam epitaxy Journal of Physics D: Applied Physics. 44: 135406. DOI: 10.1088/0022-3727/44/13/135406 |
0.359 |
|
| 2011 |
Levander AX, Novikov SV, Liliental-Weber Z, Dos Reis R, Dubon OD, Wu J, Foxon CT, Yu KM, Walukiewicz W. Doping of GaN1-xAsx with high As content Journal of Applied Physics. 110. DOI: 10.1063/1.3657779 |
0.784 |
|
| 2011 |
Guzman J, Boswell-Koller CN, Beeman JW, Bustillo KC, Conry T, Dubón OD, Hansen WL, Levander AX, Liao CY, Lieten RR, Sawyer CA, Sherburne MP, Shin SJ, Stone PR, Watanabe M, et al. Reversible phase changes in Ge-Au nanoparticles Applied Physics Letters. 98. DOI: 10.1063/1.3584850 |
0.773 |
|
| 2011 |
Levander AX, Liliental-Weber Z, Broesler R, Hawkridge ME, Novikov SV, Foxon CT, Dubon OD, Wu J, Walukiewicz W, Yu KM. Thermal stability of amorphous GaN1-x Asx alloys Applied Physics Letters. 98. DOI: 10.1063/1.3581894 |
0.818 |
|
| 2011 |
Buchowicz G, Stone PR, Robinson JT, Cress CD, Beeman JW, Dubon OD. Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils Applied Physics Letters. 98. DOI: 10.1063/1.3536529 |
0.721 |
|
| 2011 |
Levander AX, Tong T, Yu KM, Suh J, Fu D, Zhang R, Lu H, Schaff WJ, Dubon O, Walukiewicz W, Cahill DG, Wu J. Effects of point defects on thermal and thermoelectric properties of InN Applied Physics Letters. 98. DOI: 10.1063/1.3536507 |
0.771 |
|
| 2011 |
Winkler TE, Stone PR, Li T, Yu KM, Bonanni A, Dubon OD. Compensation-dependence of magnetic and electrical properties in Ga1- x Mnx P Applied Physics Letters. 98. DOI: 10.1063/1.3535957 |
0.611 |
|
| 2011 |
Yu KM, Novikov SV, Broesler R, Levander AX, Liliental-Weber Z, Luckert F, Martin RW, Dubon O, Wu J, Walukiewicz W, Foxon CT. GaNAs alloys over the whole composition range grown on crystalline and amorphous substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2503-2505. DOI: 10.1002/Pssc.201001010 |
0.773 |
|
| 2010 |
Wofford JM, Nie S, McCarty KF, Bartelt NC, Dubon OD. Graphene Islands on Cu foils: the interplay between shape, orientation, and defects. Nano Letters. 10: 4890-6. PMID 20979362 DOI: 10.1021/Nl102788F |
0.781 |
|
| 2010 |
Shin SJ, Guzman J, Yuan CW, Liao CY, Boswell-Koller CN, Stone PR, Dubon OD, Minor AM, Watanabe M, Beeman JW, Yu KM, Ager JW, Chrzan DC, Haller EE. Embedded binary eutectic alloy nanostructures: a new class of phase change materials. Nano Letters. 10: 2794-8. PMID 20698591 DOI: 10.1021/Nl100670R |
0.77 |
|
| 2010 |
Stone PR, Dubon OD, Scarpulla MA, Yu KM. Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting Handbook of Spintronic Semiconductors. 157-180. DOI: 10.4032/9789814267670 |
0.645 |
|
| 2010 |
Stone PR, Dreher L, Beeman JW, Yu KM, Brandt MS, Dubon OD. Interplay of epitaxial strain and perpendicular magnetic anisotropy in insulating ferromagnetic Ga1-xc Mnx P1-y N y Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.205210 |
0.633 |
|
| 2010 |
Mayer MA, Stone PR, Miller N, Smith HM, Dubon OD, Haller EE, Yu KM, Walukiewicz W, Liu X, Furdyna JK. Electronic structure of Ga1-x Mnx As analyzed according to hole-concentration-dependent measurements Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.045205 |
0.775 |
|
| 2010 |
Levander AX, Yu KM, Novikov SV, Tseng A, Foxon CT, Dubon OD, Wu J, Walukiewicz W. GaN1-xBix: Extremely mismatched semiconductor alloys Applied Physics Letters. 97. DOI: 10.1063/1.3499753 |
0.82 |
|
| 2010 |
Yu KM, Novikov SV, Broesler R, Liliental-Weber Z, Levander AX, Kao VM, Dubon OD, Wu J, Walukiewicz W, Foxon CT. Low gap amorphous GaN1-x Asx alloys grown on glass substrate Applied Physics Letters. 97. DOI: 10.1063/1.3488826 |
0.819 |
|
| 2010 |
Tanaka T, Yu KM, Stone PR, Beeman JW, Dubon OD, Reichertz LA, Kao VM, Nishio M, Walukiewicz W. Demonstration of homojunction ZnTe solar cells Journal of Applied Physics. 108. DOI: 10.1063/1.3463421 |
0.529 |
|
| 2010 |
Kim T, Pillai MR, Aziz MJ, Scarpulla MA, Dubon OD, Yu KM, Beeman JW, Ridgway MC. Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs Journal of Applied Physics. 108. DOI: 10.1063/1.3457106 |
0.554 |
|
| 2010 |
Zhou YY, Liu X, Furdyna JK, Scarpulla MA, Dubon OD. Ferromagnetic resonance study of Ga 1-x Mn x As fabricated on (311) GaAs wafers by Mn ion implantation and pulsed-laser melting Journal of Superconductivity and Novel Magnetism. 23: 87-90. DOI: 10.1007/S10948-009-0539-9 |
0.646 |
|
| 2010 |
Ellis B, Sarmiento T, Mayer M, Stone P, Beeman J, Zhang B, Dubon O, Haller E, Yamamoto Y, Harris J, Vuckovic J. Electrically pumped photonic crystal nanocavities using a laterally doped p-i-n junction Optics Infobase Conference Papers. |
0.626 |
|
| 2009 |
Acbas G, Kim MH, Cukr M, Novák V, Scarpulla MA, Dubon OD, Jungwirth T, Sinova J, Cerne J. Electronic structure of ferromagnetic semiconductor Ga_{1-x}Mn_{x}As probed by subgap magneto-optical spectroscopy. Physical Review Letters. 103: 137201. PMID 19905537 DOI: 10.1103/Physrevlett.103.137201 |
0.646 |
|
| 2009 |
Robinson JT, Rastelli A, Schmidt O, Dubon OD. Global faceting behavior of strained Ge islands on Si. Nanotechnology. 20: 085708. PMID 19417469 DOI: 10.1088/0957-4484/20/8/085708 |
0.586 |
|
| 2009 |
Shin SJ, Guzman J, Yuan CW, Liao CY, Stone PR, Dubon OD, Minor AM, Watanabe M, Ager JW, Chrzan DC, Haller EE. Structural characterization of GeSn alloy nanocrystals embedded in SiO 2 Materials Research Society Symposium Proceedings. 1184: 157-161. DOI: 10.1557/Proc-1184-Hh04-08 |
0.797 |
|
| 2009 |
Zhou YY, Liu X, Furdyna JK, Scarpulla MA, Dubon OD. Ferromagnetic resonance investigation of magnetic anisotropy in Ga 1-x Mnx As synthesized by ion implantation and pulsed laser melting Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.224403 |
0.651 |
|
| 2009 |
Guzman J, Shin SJ, Liao CY, Yuan CW, Stone PR, Dubón OD, Yu KM, Beeman JW, Watanabe M, Ager JW, Chrzan DC, Haller EE. Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters Applied Physics Letters. 95. DOI: 10.1063/1.3266846 |
0.792 |
|
| 2009 |
Farshchi R, Hwang DJ, Chopdekar RV, Ashby PD, Grigoropoulos CP, Dubon OD. Ultrafast pulsed-laser dissociation of Mn-H complexes in GaAs Journal of Applied Physics. 106. DOI: 10.1063/1.3253724 |
0.752 |
|
| 2009 |
Ahlers S, Stone PR, Sircar N, Arenholz E, Dubon OD, Bougeard D. Comparison of the magnetic properties of GeMn thin films through Mn L -edge x-ray absorption Applied Physics Letters. 95. DOI: 10.1063/1.3232245 |
0.597 |
|
| 2009 |
Farshchi R, Hwang DJ, Misra N, Julaton CC, Yu KM, Grigoropoulos CP, Dubon OD. Structural, magnetic, and transport properties of laser-annealed GaAs:Mn-H Journal of Applied Physics. 106. DOI: 10.1063/1.3153943 |
0.758 |
|
| 2009 |
Pan H, Misra N, Ko SH, Grigoropoulos CP, Miller N, Haller EE, Dubon O. Melt-mediated coalescence of solution-deposited ZnO nanoparticles by excimer laser annealing for thin-film transistor fabrication Applied Physics a: Materials Science and Processing. 94: 111-115. DOI: 10.1007/S00339-008-4925-0 |
0.488 |
|
| 2008 |
Stone PR, Alberi K, Tardif SK, Beeman JW, Yu KM, Walukiewicz W, Dubon OD. Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: implications to ferromagnetism. Physical Review Letters. 101: 087203. PMID 18764655 DOI: 10.1103/Physrevlett.101.087203 |
0.768 |
|
| 2008 |
Robinson JT, Dubon OD. Ge island assembly on metal-patterned Si: truncated pyramids, nanorods, and beyond. Journal of Nanoscience and Nanotechnology. 8: 56-68. PMID 18468053 DOI: 10.1166/Jnn.2008.N17 |
0.59 |
|
| 2008 |
Stone PR, Bihler C, Kraus M, Scarpulla MA, Beeman JW, Yu KM, Brandt MS, Dubon OD. Compensation-dependent in-plane magnetization reversal processes in Ga 1-xMnxP1-ySy Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.214421 |
0.707 |
|
| 2008 |
Alberi K, Yu KM, Stone PR, Dubon OD, Walukiewicz W, Wojtowicz T, Liu X, Furdyna JK. Publisher's Note: Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing (Physical Review B - Condensed Matter and Materials Physics (2008) 78, (075201)) Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.159904 |
0.76 |
|
| 2008 |
Alberi K, Yu KM, Stone PR, Dubon OD, Walukiewicz W, Wojtowicz T, Liu X, Furdyna JK. Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.075201 |
0.646 |
|
| 2008 |
Alberi K, Blacksberg J, Bell LD, Nikzad S, Yu KM, Dubon OD, Walukiewicz W. Band anticrossing in highly mismatched Snx Ge1-x semiconducting alloys Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.073202 |
0.728 |
|
| 2008 |
Kim T, Alberi K, Dubon OD, Aziz MJ, Narayanamurti V. Composition dependence of Schottky barrier heights and bandgap energies of GaNx As1-x synthesized by ion implantation and pulsed-laser melting Journal of Applied Physics. 104. DOI: 10.1063/1.3041154 |
0.741 |
|
| 2008 |
Cho YJ, Scarpulla MA, Zhou YY, Ge Z, Liu X, Dobrowolska M, Yu KM, Dubon OD, Furdyna JK. Magnetic anisotropy of ferromagnetic Ga1-xMnxAs formed by Mn ion implantation and pulsed-laser melting Journal of Applied Physics. 104. DOI: 10.1063/1.2966598 |
0.619 |
|
| 2008 |
Bihler C, Kraus M, Brandt MS, Goennenwein STB, Opel M, Scarpulla MA, Farshchi R, Estrada DM, Dubon OD. Suppression of hole-mediated ferromagnetism in Ga1-xMn xP by hydrogen Journal of Applied Physics. 104. DOI: 10.1063/1.2952045 |
0.792 |
|
| 2008 |
Scarpulla MA, Stone PR, Sharp ID, Haller EE, Dubon OD, Beeman JW, Yu KM. Nonmagnetic compensation in ferromagnetic Ga1-x Mnx As and Ga1-xMnx P synthesized by ion implantation and pulsed-laser melting Journal of Applied Physics. 103. DOI: 10.1063/1.2940361 |
0.758 |
|
| 2008 |
Alberi K, Dubon OD, Walukiewicz W, Yu KM, Gupta JA, Baribeau JM. Composition dependence of the hole mobility in Ga Sbx As1-x Applied Physics Letters. 92. DOI: 10.1063/1.2912534 |
0.739 |
|
| 2008 |
Scarpulla MA, Farshchi R, Stone PR, Chopdekar RV, Yu KM, Suzuki Y, Dubon OD. Electrical transport and ferromagnetism in Ga1-x Mnx As synthesized by ion implantation and pulsed-laser melting Journal of Applied Physics. 103. DOI: 10.1063/1.2890411 |
0.804 |
|
| 2008 |
Farshchi R, Dubon OD, Hwang DJ, Misra N, Grigoropoulos CP, Ashby PD. Laser activation of ferromagnetism in hydrogenated Ga1-x Mnx As Applied Physics Letters. 92. DOI: 10.1063/1.2824833 |
0.745 |
|
| 2007 |
Robinson JT, Ratto F, Moutanabbir O, Heun S, Locatelli A, Mentes TO, Aballe L, Dubon OD. Gold-catalyzed oxide nanopatterns for the directed assembly of Ge island arrays on Si. Nano Letters. 7: 2655-9. PMID 17672506 DOI: 10.1021/Nl071051Y |
0.583 |
|
| 2007 |
Robinson JT, Walko DA, Arms DA, Tinberg DS, Evans PG, Cao Y, Liddle JA, Rastelli A, Schmidt OG, Dubon OD. Sculpting semiconductor heteroepitaxial islands: from dots to rods. Physical Review Letters. 98: 106102. PMID 17358549 DOI: 10.1103/Physrevlett.98.106102 |
0.588 |
|
| 2007 |
Kim M, Acbas G, Yang M, Ohkubo I, Christen H, Mandrus D, Scarpulla MA, Dubon OD, Schlesinger Z, Khalifah P, Cerne J. Publisher's Note: Determination of the infrared complex magnetoconductivity tensor in itinerant ferromagnets from Faraday and Kerr measurements [Phys. Rev. B75, 214416 (2007)] Physical Review B. 76. DOI: 10.1103/Physrevb.76.149901 |
0.53 |
|
| 2007 |
Bihler C, Kraus M, Huebl H, Brandt MS, Goennenwein STB, Opel M, Scarpulla MA, Stone PR, Farshchi R, Dubon OD. Magnetocrystalline anisotropy and magnetization reversal in Ga1-x Mnx P synthesized by ion implantation and pulsed-laser melting Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.214419 |
0.801 |
|
| 2007 |
Kim MH, Acbas G, Yang MH, Ohkubo I, Christen H, Mandrus D, Scarpulla MA, Dubon OD, Schlesinger Z, Khalifah P, Cerne J. Determination of the infrared complex magnetoconductivity tensor in itinerant ferromagnets from Faraday and Kerr measurements Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.214416 |
0.56 |
|
| 2007 |
Alberi K, Wu J, Walukiewicz W, Yu KM, Dubon OD, Watkins SP, Wang CX, Liu X, Cho YJ, Furdyna J. Valence-band anticrossing in mismatched III-V semiconductor alloys Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.045203 |
0.619 |
|
| 2007 |
Alberi K, Dubon OD, Walukiewicz W, Yu KM, Bertulis K, Krotkus A. Valence band anticrossing in GaBi xAs 1-x Applied Physics Letters. 91. DOI: 10.1063/1.2768312 |
0.731 |
|
| 2007 |
Yu KM, Walukiewicz W, Farshchi R, Dubon OD, Ager JW, Sharp ID, Haller EE. Synthesis and optical properties of multiband III-V semiconductor alloys Aip Conference Proceedings. 893: 1477-1478. DOI: 10.1063/1.2730465 |
0.778 |
|
| 2007 |
Cho YJ, Scarpulla MA, Liu X, Zhou YY, Dubon OD, Furdyna JK. Magnetic cluster phases of Mn-interstitial-free (Ga,Mn)As Aip Conference Proceedings. 893: 1221-1222. DOI: 10.1063/1.2730339 |
0.569 |
|
| 2007 |
Stone PR, Scarpulla MA, Farshchi R, Sharp ID, Beeman JW, Yu KM, Arenholz E, Denlinger J, Haller EE, Dubon OD. Mn L3,2 X-ray absorption spectroscopy and magnetic circular dichroism in ferromagnetic Ga1-xMnxP Aip Conference Proceedings. 893: 1177-1178. DOI: 10.1063/1.2730317 |
0.806 |
|
| 2007 |
Stone PR, Beeman JW, Yu KM, Dubon OD. Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors Physica B: Condensed Matter. 401: 454-457. DOI: 10.1016/J.Physb.2007.08.210 |
0.605 |
|
| 2007 |
Farshchi R, Ashby PD, Hwang DJ, Grigoropoulos CP, Chopdekar RV, Suzuki Y, Dubon OD. Hydrogen patterning of Ga1-xMnxAs for planar spintronics Physica B: Condensed Matter. 401: 447-450. DOI: 10.1016/J.Physb.2007.08.208 |
0.755 |
|
| 2007 |
Yu KM, Scarpulla MA, Farshchi R, Dubon OD, Walukiewicz W. Synthesis of highly mismatched alloys using ion implantation and pulsed laser melting Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 1150-1154. DOI: 10.1016/J.Nimb.2007.03.033 |
0.81 |
|
| 2007 |
Acbas G, Sinova J, Scarpulla MA, Dubon OD, Cukr M, Novak V, Cerne J. Comparison of the mid-Infrared magneto-optical response of Ga 1-x Mn x As films grown by molecular beam epitaxy and ion implantation and pulsed laser melting Journal of Superconductivity and Novel Magnetism. 20: 457-460. DOI: 10.1007/S10948-007-0246-3 |
0.651 |
|
| 2007 |
Alberi K, Wu J, Walukiewicz W, Yu KM, Dubon OD, Watkins SP, Wang CX, Liu X, Cho YJ, Furdyna JK. Valence band anticrossing in mismatched III-V semiconductor alloys Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1711-1714. DOI: 10.1002/Pssc.200674286 |
0.616 |
|
| 2007 |
Farshchi R, Chopdekar RV, Suzuki Y, Ashby PD, Sharp D, Beeman JW, Haller EE, Dubon OD. 2D-patterned ferromagnetic III-Mn-V semiconductors for planar spintronics Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1755-1758. DOI: 10.1002/Pssc.200674285 |
0.762 |
|
| 2006 |
Stone PR, Scarpulla MA, Farshchi R, Sharp ID, Haller EE, Dubon OD, Yu KM, Beeman JW, Arenholz E, Denlinger JD, Ohldag H. Mn L 3,2 x-ray absorption and magnetic circular dichroism in ferromagnetic Ga 1-xMn xP Applied Physics Letters. 89. DOI: 10.1063/1.2219713 |
0.806 |
|
| 2006 |
Yu KM, Walukiewicz W, Ager JW, Bour D, Farshchi R, Dubon OD, Li SX, Sharp ID, Haller EE. Multiband GaNAsP quaternary alloys Applied Physics Letters. 88. DOI: 10.1063/1.2181627 |
0.814 |
|
| 2006 |
Farshchi R, Scarpulla MA, Stone PR, Yu KM, Sharp ID, Beeman JW, Silvestri HH, Reichertz LA, Haller EE, Dubon OD. Compositional tuning of ferromagnetism in Ga1-xMnxP Solid State Communications. 140: 443-446. DOI: 10.1016/J.Ssc.2006.09.010 |
0.808 |
|
| 2006 |
Dubon OD, Scarpulla MA, Farshchi R, Yu KM. Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting Physica B: Condensed Matter. 376: 630-634. DOI: 10.1016/J.Physb.2005.12.159 |
0.813 |
|
| 2006 |
Robinson JT, Liddle JA, Minor A, Radmilovic V, Dubon OD. Morphological evolution of Ge islands on Au-patterned Si Journal of Crystal Growth. 287: 518-521. DOI: 10.1016/J.Jcrysgro.2005.11.078 |
0.592 |
|
| 2005 |
Scarpulla MA, Cardozo BL, Farshchi R, Oo WM, McCluskey MD, Yu KM, Dubon OD. Ferromagnetism in Ga(1-x)Mn(x)P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band. Physical Review Letters. 95: 207204. PMID 16384094 DOI: 10.1103/Physrevlett.95.207204 |
0.812 |
|
| 2005 |
Robinson JT, Liddle JA, Minor A, Radmilovic V, Yi DO, Greaney PA, Long KN, Chrzan DC, Dubon OD. Metal-induced assembly of a semiconductor island lattice: Ge truncated pyramids on Au-patterned Si. Nano Letters. 5: 2070-3. PMID 16218739 DOI: 10.1021/Nl051719D |
0.598 |
|
| 2005 |
Walukiewicz W, Yu KM, Wu J, Ager JW, Shan W, Scrapulla MA, Dubon OD, Becla P. Highly Mismatched Alloys for Intermediate Band Solar Cells Mrs Proceedings. 865. DOI: 10.1557/Proc-865-F5.7 |
0.617 |
|
| 2005 |
Sharp ID, Xu Q, Yi DO, Liao CY, Ager III JW, Beeman JW, Yu KM, Robinson JT, Dubon OD, Chrzan DC, Haller EE. A Chemical Approach to 3-D Lithographic Patterning of Si and Ge Nanocrystals Mrs Proceedings. 901. DOI: 10.1557/PROC-0901-Rb09-03 |
0.408 |
|
| 2005 |
Sharp ID, Xu Q, Yi DO, Liao CY, Ager JW, Beeman JW, Yu KM, Robinson JT, Dubón OD, Chrzan DC, Haller EE. A chemical approach to 3-D lithographic patterning of Si and Ge nanocrystals Materials Research Society Symposium Proceedings. 901: 429-434. DOI: 10.1557/Proc-0901-Rb09-03 |
0.709 |
|
| 2005 |
Scarpulla MA, Yu KM, Walukiewicz W, Dubon OD. Carrier concentration dependencies of magnetization & transport in Ga 1-xMn xAs 1-yTe y Aip Conference Proceedings. 772: 1367-1368. DOI: 10.1063/1.1994621 |
0.575 |
|
| 2005 |
Robinson JT, Liddle JA, Minor A, Radmilovic V, Dubon OD. Directed assembly of Ge islands grown on Au-patterned Si(100) Aip Conference Proceedings. 772: 609-610. DOI: 10.1063/1.1994254 |
0.563 |
|
| 2005 |
Alberi K, Minor A, Scarpulla MA, Chung SJ, Mars DE, Yu KM, Walukiewicz W, Dubon OD. Fabrication of GaN xAs 1-x quantum structures by focused ion beam patterning Aip Conference Proceedings. 772: 223-224. DOI: 10.1063/1.1994074 |
0.566 |
|
| 2005 |
Alberi K, Minor AM, Chung SJ, Mars DE, Yu KM, Walukiewicz W, Dubon OD. GaN(x)As(1-x) Quantum Structures Fabricated by FIB Patterning Microscopy and Microanalysis. 11. DOI: 10.1017/S1431927605504914 |
0.307 |
|
| 2005 |
Dubon OD, Scarpulla MA, Yu KM, Walukiewicz W. Diluted semiconductors formed from energetic beams Institute of Physics Conference Series. 184: 399-404. |
0.612 |
|
| 2005 |
Yu KM, Walukiewicz W, Wu J, Mars DE, Scarpulla MA, Dubon OD, Ridgway MC, Geisz JF. Mutual passivation in dilute GaN xAs 1-x alloys Materials Research Society Symposium Proceedings. 864: 413-424. |
0.607 |
|
| 2004 |
Shan W, Walukiewicz W, Yu KM, Ager JW, Wu J, Beeman J, Scapulla MA, Dubon OD, Haller EE, Nabetani Y, Becla P. Effect of oxygen on the electronic band structure of II-O-VI alloys Proceedings of Spie - the International Society For Optical Engineering. 5349: 426-434. DOI: 10.1117/12.529297 |
0.624 |
|
| 2004 |
Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Scarpulla MA, Dubon OD, Becla P. Synthesis and optical properties of II-O-VI highly mismatched alloys Journal of Applied Physics. 95: 6232-6238. DOI: 10.1063/1.1713021 |
0.693 |
|
| 2004 |
Shan W, Yu KM, Walukiewicz W, Beeman JW, Wu J, Ager JW, Scarpulla MA, Dubon OD, Haller EE. Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys Applied Physics Letters. 84: 924-926. DOI: 10.1063/1.1646457 |
0.746 |
|
| 2004 |
Yu KM, Walukiewicz W, Scarpulla MA, Dubon OD, Shan W, Wu J, Beeman JW, Becla P. Synthesis and properties of highly mismatched II-O-VI alloys Iee Proceedings: Optoelectronics. 151: 452-459. DOI: 10.1049/ip-opt:20040932 |
0.622 |
|
| 2004 |
Yu KM, Walukiewicz W, Wu J, Shan W, Scarpulla MA, Dubon OD, Beeman JW, Becla P. Diluted ZnMnTe oxide: A multi-band semiconductor for high efficiency solar cells Physica Status Solidi (B) Basic Research. 241: 660-663. DOI: 10.1002/Pssb.200304167 |
0.731 |
|
| 2003 |
Yu KM, Walukiewicz W, Wu J, Shan W, Beeman JW, Scarpulla MA, Dubon OD, Becla P. Diluted II-VI oxide semiconductors with multiple band gaps. Physical Review Letters. 91: 246403. PMID 14683137 DOI: 10.1103/Physrevlett.91.246403 |
0.729 |
|
| 2003 |
Yu KM, Walukiewicz W, Wu J, Shan W, Beeman JW, Scarpulla MA, Dubon OD, Ridgway MC, Mars DE, Chamberlin DR. Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloys Applied Physics Letters. 83: 2844-2846. DOI: 10.1063/1.1616980 |
0.78 |
|
| 2003 |
Yu KM, Walukiewicz W, Scarpulla MA, Dubon OD, Wu J, Jasinski J, Liliental-Weber Z, Beeman JW, Pillai MR, Aziz MJ. Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs Journal of Applied Physics. 94: 1043-1049. DOI: 10.1063/1.1582393 |
0.707 |
|
| 2003 |
Scarpulla MA, Dubon OD, Yu KM, Monteiro O, Pillai MR, Aziz MJ, Ridgway MC. Ferromagnetic Ga1-xMnxAs produced by ion implantation and pulsed-laser melting Applied Physics Letters. 82: 1251-1253. DOI: 10.1063/1.1555260 |
0.566 |
|
| 2003 |
Scarpulla MA, Daud U, Yu KM, Monteiro O, Liliental-Weber Z, Zakharov D, Walukiewicz W, Dubon OD. Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting Physica B: Condensed Matter. 340: 908-912. DOI: 10.1016/J.Physb.2003.09.113 |
0.645 |
|
| 2003 |
Yu KM, Wu J, Walukiewicz W, Shan W, Beeman JW, Mars DE, Chamberlin DR, Scarpulla MA, Dubon OD, Ridgway MC, Geisz JF. Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloys Physica B: Condensed Matter. 340: 389-393. DOI: 10.1016/J.Physb.2003.09.060 |
0.793 |
|
| 2002 |
Yu KM, Walukiewicz W, Wu J, Mars DE, Chamberlin DR, Scarpulla MA, Dubon OD, Geisz JF. Mutual passivation of electrically active and isovalent impurities. Nature Materials. 1: 185-9. PMID 12618808 DOI: 10.1038/Nmat754 |
0.813 |
|
| 2002 |
Yu KM, Walukiewicz W, Beeman JW, Scarpulla MA, Dubon OD, Pillai MR, Aziz MJ. Enhanced nitrogen incorporation by pulsed laser annealing of GaN xAs1-x formed by N ion implantation Applied Physics Letters. 80: 3958-3960. DOI: 10.1063/1.1481196 |
0.622 |
|
| 2001 |
Dubon OD, Evans PG, Chervinsky JF, Aziz MJ, Spaepen F, Golovchenko JA, Chisholm MF, Muller DA. Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer Applied Physics Letters. 78: 1505-1507. DOI: 10.1063/1.1352692 |
0.366 |
|
| 2001 |
Dubon OD, Silvestri HH, Walukiewicz W, Haller EE. Hopping conduction through the 2s states of copper acceptors in uniaxially stressed germanium Solid State Communications. 117: 537-541. DOI: 10.1016/S0038-1098(00)00499-3 |
0.779 |
|
| 2000 |
Evans PG, Dubon OD, Chervinsky JF, Spaepen F, Golovchenko JA. Comment on “Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb” [Appl. Phys. Lett. 75, 2954 (1999)] Applied Physics Letters. 77: 2616-2616. DOI: 10.1063/1.1318930 |
0.337 |
|
| 1998 |
Evans PG, Dubon OD, Chervinsky JF, Spaepen F, Golovchenko JA. Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer Applied Physics Letters. 73: 3120-3122. DOI: 10.1063/1.122692 |
0.337 |
|
| 1998 |
Walukiewicz W, Dubon OD, Silvestri HH, Haller EE. Hole transport in the upper hubbard band in Cu-doped germanium under uniaxial pressure Physica Status Solidi (B) Basic Research. 210: 253-262. DOI: 10.1002/(Sici)1521-3951(199812)210:2<253::Aid-Pssb253>3.0.Co;2-0 |
0.779 |
|
| 1997 |
Chamberlin DR, Dubon OD, Brundermann E, Haller EE, Reichertz LA, Sirmain G, Linhart AM, Roser HP. Multivalent acceptor-doped germanium lasers: a solid-state tunable source from 75 to 300 μm Materials Research Society Symposium - Proceedings. 484: 177-182. DOI: 10.1557/Proc-484-177 |
0.722 |
|
| 1997 |
Chamberlin DR, Dubon OD, Bründermann E, Haller EE, Reichertzl LA, Sirmain G, Linhart AM, Röser HP. Multivalent Acceptor-Doped Germanium Lasers: a solid-state tunable source from 75 to 300 μm Mrs Proceedings. 484. DOI: 10.1557/PROC-484-177 |
0.736 |
|
| 1997 |
Dubon OD, Walukiewicz W, Beeman JW, Haller EE. Direct observation of the hubbard gap in a semiconductor Physical Review Letters. 78: 3519-3522. DOI: 10.1103/Physrevlett.78.3519 |
0.362 |
|
| 1997 |
Dubon OD, Walukiewicz W, Beeman JW, Haller EE. Direct Observation of the Hubbard Gap in a Semiconductor Physical Review Letters. 78: 3519-3522. DOI: 10.1103/PhysRevLett.78.3519 |
0.418 |
|
| 1997 |
Itoh KM, Kinoshita T, Muto J, Haegel NM, Walukiewicz W, Dubon OD, Beeman JW, Haller EE. Carrier scattering by neutral divalent impurities in semiconductors: Theory and experiment Physical Review B. 56: 1906-1910. DOI: 10.1103/Physrevb.56.1906 |
0.599 |
|
| 1997 |
Reichertz LA, Dubon OD, Sirmain G, Bründermann E, Hansen WL, Chamberlin DR, Linhart AM, Röser HP, Haller EE. Stimulated far-infrared emission from combined cyclotron resonances in germanium Physical Review B - Condensed Matter and Materials Physics. 56: 12069-12072. DOI: 10.1103/Physrevb.56.12069 |
0.649 |
|
| 1997 |
Reichertz LA, Dubon OD, Sirmain G, Bründermann E, Hansen WL, Chamberlin DR, Linhart AM, Röser HP, Haller EE. Stimulated far-infrared emission from combined cyclotron resonances in germanium Physical Review B. 56: 12069-12072. DOI: 10.1103/PhysRevB.56.12069 |
0.667 |
|
| 1997 |
Sirmain G, Reichertz LA, Dubon OD, Haller EE, Hansen WL, Bründermann E, Linhart AM, Röser HP. Stimulated far-infrared emission from copper-doped germanium crystals Applied Physics Letters. 70: 1659-1661. DOI: 10.1063/1.118662 |
0.342 |
|
| 1997 |
Sirmain G, Reichertz LA, Dubon OD, Haller EE, Hansen WL, Bründermann E, Linhart AM, Röser HP. Stimulated far-infrared emission from copper-doped germanium crystals Applied Physics Letters. 70: 1659-1661. DOI: 10.1063/1.118662 |
0.362 |
|
| 1996 |
Sirmain G, Dubon OD, Hansen WL, Olsen CS, Haller EE. A copper-related acceptor complex in vacuum grown germanium crystals Journal of Applied Physics. 79: 209-213. DOI: 10.1063/1.360933 |
0.332 |
|
| 1996 |
Sirmain G, Dubon OD, Hansen WL, Olsen CS, Haller EE. A copper‐related acceptor complex in vacuum grown germanium crystals Journal of Applied Physics. 79: 209-213. DOI: 10.1063/1.360933 |
0.323 |
|
| 1996 |
Bründermann E, Linhart AM, Reichertz L, Röser HP, Dubon OD, Hansen WL, Sirmain G, Haller EE. Double acceptor doped Ge: A new medium for inter-valence-band lasers Applied Physics Letters. 68: 3075-3077. DOI: 10.1063/1.116427 |
0.515 |
|
| 1996 |
Bründermann E, Linhart AM, Röser HP, Dubon OD, Hansen WL, Haller EE. Miniaturization of p-Ge lasers: Progress toward continuous wave operation Applied Physics Letters. 68: 1359-1361. DOI: 10.1063/1.116079 |
0.48 |
|
| 1996 |
Beeman JW, Hansen WL, Dubon OD, Haller EE. High performance antimony-doped germanium photoconductors Infrared Physics and Technology. 37: 715-721. DOI: 10.1016/S1350-4495(96)00020-5 |
0.488 |
|
| 1995 |
Dubon OD, Wilke I, Beeman JW, Haller EE. Dependence of the hole lifetime on uniaxial stress in Ga-doped Ge. Physical Review. B, Condensed Matter. 51: 7349-7352. PMID 9977310 DOI: 10.1103/Physrevb.51.7349 |
0.468 |
|
| 1995 |
Wilke I, Dubon OD, Beeman JW, Haller EE. Spectroscopy of the hole population in bound excited acceptor states during recombination in p-type Ge Solid State Communications. 93: 409-414. DOI: 10.1016/0038-1098(94)00808-6 |
0.467 |
|
| 1994 |
Dubon OD, Beeman JW, Falicov LM, Fuchs HD, Haller EE, Wang C. Copper acceptors in uniaxially stressed germanium: 1s3 to 1s2 2s1 ground-state transformation. Physical Review Letters. 72: 2231-2234. PMID 10055822 DOI: 10.1103/PhysRevLett.72.2231 |
0.312 |
|
| Show low-probability matches. |