| Year |
Citation |
Score |
| 2019 |
Gleskova H, Cheng I, Kattamis AZ, Wagner S, Suo Z. Overlay Alignment in a-Si:H TFTs Fabricated on Foil Substrates Ecs Transactions. 3: 249-253. DOI: 10.1149/1.2356360 |
0.343 |
|
| 2018 |
Wagner S. Thin-film semiconductors—From exploration to application Mrs Bulletin. 43: 617-624. DOI: 10.1557/Mrs.2018.179 |
0.407 |
|
| 2016 |
Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Asilar E, Bergauer T, Brandstetter J, Brondolin E, Dragicevic M, Erö J, Flechl M, Friedl M, Frühwirth R, Ghete VM, Hartl C, ... ... Wagner SR, et al. Search for Narrow Resonances in Dijet Final States at sqrt[s]=8 TeV with the Novel CMS Technique of Data Scouting. Physical Review Letters. 117: 031802. PMID 27472109 DOI: 10.1103/PhysRevLett.117.031802 |
0.458 |
|
| 2016 |
Liu T, Aygun LE, Wagner S, Sturm JC. Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors under Low Gate-Field Stress - Part I: Two-Stage Model for Lifetime Prediction Ieee Transactions On Device and Materials Reliability. 16: 243-254. DOI: 10.1109/Tdmr.2016.2526498 |
0.435 |
|
| 2016 |
Liu T, Aygun LE, Wagner S, Sturm JC. Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors under Low Gate-Field Stress - Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence Ieee Transactions On Device and Materials Reliability. 16: 255-262. DOI: 10.1109/Tdmr.2016.2524626 |
0.476 |
|
| 2016 |
Moy T, Rieutort-Louis W, Wagner S, Sturm JC, Verma N. A Thin-Film, Large-Area Sensing and Compression System for Image Detection Ieee Transactions On Circuits and Systems I-Regular Papers. 63: 1833-1844. DOI: 10.1109/Tcsi.2016.2600498 |
0.358 |
|
| 2016 |
Moy T, Huang L, Rieutort-Louis W, Wu C, Cuff P, Wagner S, Sturm JC, Verma N. An EEG Acquisition and Biomarker-Extraction System Using Low-Noise-Amplifier and Compressive-Sensing Circuits Based on Flexible, Thin-Film Electronics Ieee Journal of Solid-State Circuits. DOI: 10.1109/Jssc.2016.2598295 |
0.378 |
|
| 2016 |
Sanz-Robinson J, Huang L, Moy T, Rieutort-Louis W, Hu Y, Wagner S, Sturm JC, Verma N. Large-Area Microphone Array for Audio Source Separation Based on a Hybrid Architecture Exploiting Thin-Film Electronics and CMOS Ieee Journal of Solid-State Circuits. 51: 979-991. DOI: 10.1109/Jssc.2015.2501426 |
0.381 |
|
| 2016 |
Wielgoszewski G, Moczała M, Orłowska K, Sówka P, Cao W, Wagner S, Gotszalk T. A symmetrical stretching stage for electrical atomic force microscopy Measurement: Journal of the International Measurement Confederation. 87: 185-188. DOI: 10.1016/J.Measurement.2016.03.031 |
0.521 |
|
| 2016 |
Afsar Y, Tang J, Rieutort-Louis W, Huang L, Hu Y, Sanz-Robinson J, Verma N, Wagner S, Sturm JC. Impact of bending on flexible metal oxide TFTs and oscillator circuits Journal of the Society For Information Display. 24: 371-380. DOI: 10.1002/Jsid.445 |
0.344 |
|
| 2015 |
Sahasrabudhe G, Rupich SM, Jhaveri J, Berg AH, Nagamatsu KA, Man G, Chabal YJ, Kahn A, Wagner S, Sturm JC, Schwartz J. Low-Temperature Synthesis of a TiO2/Si Heterojunction. Journal of the American Chemical Society. PMID 26579554 DOI: 10.1021/Jacs.5B09750 |
0.478 |
|
| 2015 |
Kang WH, Cao W, Graudejus O, Patel TP, Wagner S, Meaney DF, Morrison B. Alterations in Hippocampal Network Activity after In Vitro Traumatic Brain Injury. Journal of Neurotrauma. 32: 1011-9. PMID 25517970 DOI: 10.1089/Neu.2014.3667 |
0.444 |
|
| 2015 |
Chin HA, Mao S, Visweswaran BL, Ohemeng KK, Wagner S, Purohit PK, McAlpine MC. Pyro-paraelectricity: A new effect in hetergeneous material architectures Proceedings of Spie - the International Society For Optical Engineering. 9439. DOI: 10.1117/12.2083644 |
0.339 |
|
| 2015 |
Visweswaran B, Mandlik P, Mohan SH, Silvernail JA, Ma R, Sturm JC, Wagner S. Diffusion of water into permeation barrier layers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4918327 |
0.713 |
|
| 2015 |
Rieutort-Louis WSA, Sanz-Robinson J, Moy T, Huang L, Hu Y, Afsar Y, Sturm JC, Verma N, Wagner S. Integrating and Interfacing Flexible Electronics in Hybrid Large-Area Systems Ieee Transactions On Components, Packaging and Manufacturing Technology. 5: 1219-1229. DOI: 10.1109/Tcpmt.2015.2448755 |
0.356 |
|
| 2015 |
Jhaveri J, Nagamatsu KA, Berg AH, Man G, Sahasrabudhe G, Wagner S, Schwartz J, Kahn A, Sturm JC. Double-heterojunction crystalline silicon solar cell with electron-selective TiO2 cathode contact fabricated at 100°C with open-circuit voltage of 640 mV 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356054 |
0.345 |
|
| 2015 |
Rieutort-Louis W, Moy T, Wang Z, Wagner S, Sturm JC, Verma N. A Large-Area Image Sensing and Detection System Based on Embedded Thin-Film Classifiers Ieee Journal of Solid-State Circuits. DOI: 10.1109/Jssc.2015.2489842 |
0.316 |
|
| 2015 |
Huang L, Rieutort-Louis W, Gualdino A, Teagno L, Hu Y, Mouro J, Sanz-Robinson J, Sturm JC, Wagner S, Chu V, Conde JP, Verma N. A System Based on Capacitive Interfacing of CMOS With Post-Processed Thin-Film MEMS Resonators Employing Synchronous Readout for Parasitic Nulling Ieee Journal of Solid-State Circuits. 50: 1002-1015. DOI: 10.1109/Jssc.2014.2380440 |
0.316 |
|
| 2015 |
Nagamatsu KA, Avasthi S, Sahasrabudhe G, Man G, Jhaveri J, Berg AH, Schwartz J, Kahn A, Wagner S, Sturm JC. Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell Applied Physics Letters. 106: 123906. DOI: 10.1063/1.4916540 |
0.425 |
|
| 2015 |
Chin HA, Mao S, Meng F, Ohemeng KK, Purohit PK, Wagner S, McAlpine MC. A flexible barium strontium titanate photodetector array Extreme Mechanics Letters. DOI: 10.1016/J.Eml.2016.02.015 |
0.343 |
|
| 2014 |
Sanz-Robinson J, Rieutort-Louis W, Hu Y, Huang L, Verma N, Wagner S, Sturm JC. Hybrid amorphous/nanocrystalline silicon schottky diodes for high frequency rectification Ieee Electron Device Letters. 35: 425-427. DOI: 10.1109/Led.2014.2306940 |
0.355 |
|
| 2014 |
Hu Y, Rieutort-Louis WSA, Sanz-Robinson J, Huang L, Glisic B, Sturm JC, Wagner S, Verma N. Large-scale sensing system combining large-area electronics and cmos ics for structural-health monitoring Ieee Journal of Solid-State Circuits. 49: 513-523. DOI: 10.1109/Jssc.2013.2295979 |
0.306 |
|
| 2014 |
Rieutort-Louis W, Huang L, Hu Y, Sanz-Robinson J, Wagner S, Sturm JC, Verma N. A complete fully thin-film pv harvesting and power-management system on plastic with on-sheet battery management and wireless power delivery to off-sheet loads Ieee Journal of Photovoltaics. 4: 432-439. DOI: 10.1109/Jphotov.2013.2285959 |
0.38 |
|
| 2014 |
Rieutort-Louis W, Huang L, Hu Y, Sanz-Robinson J, Moy T, Afsar Y, Sturm JC, Verma N, Wagner S. Current gain of amorphous silicon thin-film transistors above the cutoff frequency Device Research Conference - Conference Digest, Drc. 273-274. DOI: 10.1109/DRC.2014.6872403 |
0.327 |
|
| 2014 |
Visweswaran B, Mohan SH, Mandlik P, Silvernail J, Ma R, Sturm J, Wagner S. Predicting the lifetime of flexible permeation barrier layers for OLED displays Digest of Technical Papers - Sid International Symposium. 45: 111-113. DOI: 10.1002/j.2168-0159.2014.tb00031.x |
0.681 |
|
| 2013 |
Sturm JC, Avasthi S, Nagamatsu K, Jhaveri J, McClain W, Man G, Kahn A, Schwartz J, Wagner S. Wide bandgap heterojunctions on crystalline silicon Ecs Transactions. 58: 97-105. DOI: 10.1149/05809.0097ecst |
0.315 |
|
| 2012 |
Graudejus O, Morrison B, Goletiani C, Yu Z, Wagner S. Encapsulating Elastically Stretchable Neural Interfaces: Yield, Resolution, and Recording/Stimulation of Neural Activity. Advanced Functional Materials. 22: 640-651. PMID 24093006 DOI: 10.1002/Adfm.201102290 |
0.316 |
|
| 2012 |
Wagner S, Bauer S. Materials for stretchable electronics Mrs Bulletin. 37: 207-213. DOI: 10.1557/Mrs.2012.37 |
0.329 |
|
| 2012 |
Liu T, Wagner S, Sturm JC. Two-stage model for lifetime prediction of highly stable amorphous-silicon thin-film transistors under low-gate field Device Research Conference - Conference Digest, Drc. 245-246. DOI: 10.1109/DRC.2012.6257025 |
0.318 |
|
| 2011 |
Sturm JC, Huang Y, Han L, Liu T, Hekmatshoar B, Cherenack K, Lausecker E, Wagner S. Amorphous silicon: The other silicon 2011 12th International Conference On Ultimate Integration On Silicon, Ulis 2011. 34-37. DOI: 10.1109/ULIS.2011.5758011 |
0.712 |
|
| 2011 |
Huang Y, Wagner S, Sturm JC. Nonvolatile amorphous-silicon thin-film-transistor memory structure for drain-voltage independent saturation current Ieee Transactions On Electron Devices. 58: 2924-2927. DOI: 10.1109/Ted.2011.2159609 |
0.434 |
|
| 2011 |
Han L, Huang Y, Sturm JC, Wagner S. Self-aligned top-gate coplanar a-Si:H thin-film transistors with a SiO 2silicone hybrid gate dielectric Ieee Electron Device Letters. 32: 36-38. DOI: 10.1109/Led.2010.2084558 |
0.529 |
|
| 2011 |
Liu T, Wagner S, Sturm JC. A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests Ieee International Reliability Physics Symposium Proceedings. 2E.3.1-2E.3.5. DOI: 10.1109/IRPS.2011.5784463 |
0.313 |
|
| 2011 |
Jun Nam W, Ji L, Benanti TL, Varadan VV, Wagner S, Wang Q, Nemeth W, Neidich D, Fonash SJ. Incorporation of a light and carrier collection management nano-element array into superstrate a-Si:H solar cells Applied Physics Letters. 99. DOI: 10.1063/1.3628460 |
0.395 |
|
| 2011 |
Cao W, Görrn P, Wagner S. Modeling the electrical resistance of gold film conductors on uniaxially stretched elastomeric substrates Applied Physics Letters. 98: 212112. DOI: 10.1063/1.3594240 |
0.535 |
|
| 2011 |
Görrn P, Cao W, Wagner S. Isotropically stretchable gold conductors on elastomeric substrates Soft Matter. 7: 7177-7180. DOI: 10.1039/C1Sm05705G |
0.583 |
|
| 2010 |
Graudejus O, Görrn P, Wagner S. Controlling the morphology of gold films on poly(dimethylsiloxane). Acs Applied Materials & Interfaces. 2: 1927-33. PMID 20608644 DOI: 10.1021/Am1002537 |
0.416 |
|
| 2010 |
Huang Y, Hekmatshoar B, Wagner S, Sturm JC. Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory Journal of the Society For Information Display. 18: 879-883. DOI: 10.1889/Jsid18.11.879 |
0.303 |
|
| 2010 |
Han L, Song K, Wagner S, Mandlik P. 17.3: a-Si:H Thin-film Transistors with a New Hybrid Dielectric Highly Stable under Mechanical and Electrical Stress Sid Symposium Digest of Technical Papers. 41: 238. DOI: 10.1889/1.3500416 |
0.363 |
|
| 2010 |
Han L, Song K, Wagner S, Mandlik P. A new insulator for thin-film transistor backplanes and for flexible passivation layers Ecs Transactions. 33: 125-134. DOI: 10.1149/1.3481226 |
0.711 |
|
| 2010 |
Cherenack KH, Hekmatshoar B, Sturm JC, Wagner S. Self-aligned amorphous silicon thin-film transistors fabricated on clear plastic at 300°C Ieee Transactions On Electron Devices. 57: 2381-2389. DOI: 10.1109/Ted.2010.2056132 |
0.762 |
|
| 2010 |
Lausecker E, Huang Y, Fromherz T, Sturm JC, Wagner S. Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication Applied Physics Letters. 96. DOI: 10.1063/1.3457446 |
0.372 |
|
| 2010 |
Han L, Song K, Mandlik P, Wagner S. Ultraflexible amorphous silicon transistors made with a resilient insulator Applied Physics Letters. 96. DOI: 10.1063/1.3298364 |
0.771 |
|
| 2010 |
Wagner S. Amorphous silicon: Vehicle and test bed for large-area electronics Physica Status Solidi (a). 207: 501-509. DOI: 10.1002/Pssa.200982910 |
0.308 |
|
| 2010 |
Wagner S, Han L, Hekmatshoar B, Song K, Mandlik P, Cherenack KH, Sturm JC. 61.3: Amorphous silicon TFT technology for rollable OLED displays 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2: 917-920. |
0.81 |
|
| 2009 |
Cherenack KH, Kattamis AZ, Hekmatshoar B, Sturm JC, Wagner S. Amorphous Silicon Thin-Film Transistors made on Clear Plastic at 300 °C Journal of the Korean Physical Society. 54: 415-420. DOI: 10.3938/Jkps.54.415 |
0.767 |
|
| 2009 |
Sturm JC, Hekmatshoar B, Cherenack K, Wagner S. 65.1 : Invited Paper: Amorphous Silicon TFT's with 100-Year Lifetimes in a Clear Plastic Compatible Process for AMOLEDs Sid Symposium Digest of Technical Papers. 40: 979. DOI: 10.1889/1.3256963 |
0.684 |
|
| 2009 |
Song KW, Han L, Wagner S, Mandlik P. Effects of Mechanical Strain on the Electrical Performance of Amorphous Silicon Thin-Film Transistors with a New Gate Dielectric Mrs Proceedings. 1196. DOI: 10.1557/Proc-1196-C02-02 |
0.75 |
|
| 2009 |
Graudejus O, Yu Z, Jones J, Morrison B, Wagner S. Characterization of an Elastically Stretchable Microelectrode Array and Its Application to Neural Field Potential Recordings Journal of the Electrochemical Society. 156: 85. DOI: 10.1149/1.3115465 |
0.342 |
|
| 2009 |
Han L, Mandlik P, Gartside J, Wagner S, Silvernail JA, Ma RQ, Hack M, Brown JJ. Properties of a permeation barrier material deposited from hexamethyl disiloxane and oxygen Journal of the Electrochemical Society. 156: H106-H114. DOI: 10.1149/1.3028308 |
0.675 |
|
| 2009 |
Han L, Mandlik P, Wagner S. A new gate dielectric for highly stable amorphous-silicon thin-film transistors with ∼1.5-cm2 V · s electron field-effect mobility Ieee Electron Device Letters. 30: 502-504. DOI: 10.1109/Led.2009.2015779 |
0.779 |
|
| 2009 |
Hekmatshoar B, Wagner S, Sturm JC. Optimum low-gate-field and high-gate-field stability of amorphous silicon thin-film transistors with a single plastic-compatible gate nitride deposition process Device Research Conference - Conference Digest, Drc. 189-190. DOI: 10.1109/DRC.2009.5354944 |
0.325 |
|
| 2009 |
Huang Y, Hekmatshoar B, Wagner S, Sturm JC. Amorphous silicon floating-gate thin film transistor Device Research Conference - Conference Digest, Drc. 135-136. DOI: 10.1109/DRC.2009.5354877 |
0.395 |
|
| 2009 |
Hekmatshoar B, Wagner S, Sturm JC. Tradeoff regimes of lifetime in amorphous silicon thin-film transistors and a universal lifetime comparison framework Applied Physics Letters. 95. DOI: 10.1063/1.3238559 |
0.474 |
|
| 2009 |
Han L, Mandlik P, Cherenack KH, Wagner S. Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm2 /V s for electrons and 0.1 cm2 /V s for holes Applied Physics Letters. 94. DOI: 10.1063/1.3119636 |
0.83 |
|
| 2009 |
Cherenack KH, Kattamis AZ, Hekmatshoar B, Sturm JC, Wagner S. Amorphous silicon thin-film transistors made on clear plastic at 300°C Journal of the Korean Physical Society. 54: 415-420. |
0.75 |
|
| 2008 |
Hekmatshoar B, Kattamis AZ, Cherenack K, Wagner S, Sturm JC. A novel TFT-OLED integration for OLED-independent pixel programming in amorphous-Si AMOLED pixels Journal of the Society For Information Display. 16: 183-188. DOI: 10.1889/1.2835027 |
0.726 |
|
| 2008 |
Kattamis AZ, Cherenack KH, Cheng I, Long K, Sturm JC, Wagner S. Fracture Mechanisms of SiN x Thin-films on Compliant Substrates Mrs Proceedings. 1078. DOI: 10.1557/Proc-1078-M14-02 |
0.754 |
|
| 2008 |
Cherenack KH, Kattamis AZ, Hekmatshoar B, Sturm JC, Wagner S. Self-aligned amorphous silicon thin film transistors with mobility above 1 cm 2V -1s -1 fabricated at 300° C on clear plastic substrates Materials Research Society Symposium Proceedings. 1066: 471-476. DOI: 10.1557/Proc-1066-A20-03 |
0.75 |
|
| 2008 |
Chen JZ, Cherenack K, Tsay C, Cheng I, Wagner S. Effects of SiN x Passivation and Gate Metal Roughness on the Performance of On-plastic a-Si : H TFTs Electrochemical and Solid State Letters. 11. DOI: 10.1149/1.2812443 |
0.768 |
|
| 2008 |
Cheng I, Wagner S, Vallat-Sauvain E. Contact Resistance in Nanocrystalline Silicon Thin-Film Transistors Ieee Transactions On Electron Devices. 55: 973-977. DOI: 10.1109/Ted.2008.916766 |
0.651 |
|
| 2008 |
Huang Y, Hekmatshoar B, Wagner S, Sturm JC. Top-gate amorphous silicon TFT with self-aligned silicide source/drain and high mobility Ieee Electron Device Letters. 29: 737-739. DOI: 10.1109/Led.2008.2000645 |
0.446 |
|
| 2008 |
Hekmatshoar B, Kattamis AZ, Cherenack KH, Long K, Chen JZ, Wagner S, Sturm JC, Rajan K, Hack M. Reliability of active-matrix organic light-emitting-diode arrays with amorphous silicon thin-film transistor backplanes on clear plastic Ieee Electron Device Letters. 29: 63-66. DOI: 10.1109/Led.2007.910800 |
0.756 |
|
| 2008 |
Hekmatshoar B, Cherenack KH, Wagner S, Sturm JC. Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796621 |
0.717 |
|
| 2008 |
Hekmatshoar B, Cherenack K, Long K, Kattamis A, Wagner S, Sturm JC. Amoled reliability with a-si tft's in normal vs. inverted TFT/OLED integration scheme Device Research Conference - Conference Digest, Drc. 243-244. DOI: 10.1109/DRC.2008.4800822 |
0.681 |
|
| 2008 |
Huang Y, Hekmatshoar B, Wagner S, Sturm JC. Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain Device Research Conference - Conference Digest, Drc. 241-242. DOI: 10.1109/DRC.2008.4800821 |
0.334 |
|
| 2008 |
Mandlik P, Han L, Wagner S, Silvernail JA, Ma RQ, Hack M, Brown JJ. Diffusion of atmospheric gases into barrier-layer sealed organic light emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.3030982 |
0.685 |
|
| 2008 |
Hekmatshoar B, Cherenack KH, Kattamis AZ, Long K, Wagner S, Sturm JC. Highly stable amorphous-silicon thin-film transistors on clear plastic Applied Physics Letters. 93. DOI: 10.1063/1.2963481 |
0.773 |
|
| 2008 |
Mandlik P, Gartside J, Han L, Cheng IC, Wagner S, Silvernail JA, Ma RQ, Hack M, Brown JJ. A single-layer permeation barrier for organic light-emitting displays Applied Physics Letters. 92. DOI: 10.1063/1.2890432 |
0.796 |
|
| 2008 |
Gleskova H, Wagner S. Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils Journal of Non-Crystalline Solids. 354: 2627-2631. DOI: 10.1016/J.Jnoncrysol.2007.09.069 |
0.312 |
|
| 2008 |
Kattamis AZ, Cherenack KH, Cheng IC, Long K, Sturm JC, Wagner S. Fracture mechanisms of sink thin-films on compliant substrates Materials Research Society Symposium Proceedings. 1078: 16-21. |
0.683 |
|
| 2007 |
Kattamis AZ, Giebink N, Cheng IC, Wagner S, Forrest SR, Hong Y, Cannella V. Active-matrix organic light-emitting displays employing two thin-film-transistor a-Si:H pixels on flexible stainless-steel foil Journal of the Society For Information Display. 15: 433-437. DOI: 10.1889/1.2759547 |
0.67 |
|
| 2007 |
Long K, Cheng IC, Kattamis A, Gleskova H, Wagner S, Sturm JC. Amorphous-silicon thin-film transistors made at 28°C on clear-plastic substrates by interfacial stress engineering Journal of the Society For Information Display. 15: 167-176. DOI: 10.1889/1.2716494 |
0.669 |
|
| 2007 |
Tsay C, Graudejus O, Jones J, Lacour SP, Wagner S. Morphology and Stretchability of Thin Film Metal Conductors on Elastomeric Substrates Mrs Proceedings. 1009: 26-28. DOI: 10.1557/Proc-1009-U06-03 |
0.429 |
|
| 2007 |
Gartside J, Mandlik P, Wagner S, Zhou T, Silvernail J, Hack M. Material Characterisation of a Novel Permeation Barrier for Flexible Organic Displays Mrs Proceedings. 1007. DOI: 10.1557/Proc-1007-S07-06 |
0.658 |
|
| 2007 |
Cheng I, Wagner S. Self-Aligned Nanocrystalline Silicon Thin-Film Transistor With Deposited n + Source/Drain Layer Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A11-02 |
0.63 |
|
| 2007 |
Chen J, Cheng I, Wagner S, Jackson W, Perlov C, Taussig C. Stability of Amorphous Silicon Thin Film Transistors under Prolonged High Compressive Strain Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A09-04 |
0.629 |
|
| 2007 |
Cherenack KH, Kattamis AZ, Hekmatshoar B, Sturm JC, Wagner S. Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic Ieee Electron Device Letters. 28: 1004-1006. DOI: 10.1109/Led.2007.907411 |
0.764 |
|
| 2007 |
Kattamis AZ, Cherenack KH, Hekmatshoar B, Cheng IC, Gleskova H, Sturm JC, Wagner S. Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability Ieee Electron Device Letters. 28: 606-608. DOI: 10.1109/Led.2007.900078 |
0.79 |
|
| 2007 |
Kattamis AZ, Cheng IC, Long K, Hekmatshoar B, Cherenack KH, Wagner S, Sturm JC, Venugopal SM, Loy DE, O'Rourke SM, Allee DR. Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displays Ieee/Osa Journal of Display Technology. 3: 304-308. DOI: 10.1109/Jdt.2007.900935 |
0.777 |
|
| 2007 |
Hekmatshoar B, Long K, Wagner S, Sturm JC. Analytical model of apparent threshold voltage lowering induced by contact resistance in amorphous silicon thin film transistors 65th Drc Device Research Conference. 131-132. DOI: 10.1109/DRC.2007.4373684 |
0.319 |
|
| 2007 |
Hekmatshoar B, Kattamis AZ, Cherenack K, Wagner S, Sturm JC. Novel amorphous-Si AMOLED pixels with OLED-independent turn-on voltage and driving current 65th Drc Device Research Conference. 95-96. DOI: 10.1109/DRC.2007.4373666 |
0.699 |
|
| 2007 |
Carcia PF, McLean RS, Reilly MH, Crawford MK, Blanchard EN, Kattamis AZ, Wagner S. A comparison of zinc oxide thin-film transistors on silicon oxide and silicon nitride gate dielectrics Journal of Applied Physics. 102. DOI: 10.1063/1.2786869 |
0.334 |
|
| 2006 |
Hong Y, Heiler G, Kerr R, Kattamis AZ, Cheng I, Wagner S. 64.3: Amorphous Silicon Thin-Film Transistor Backplane on Stainless Steel Foil Substrates for AMOLEDs Sid Symposium Digest of Technical Papers. 37: 1862. DOI: 10.1889/1.2433407 |
0.371 |
|
| 2006 |
Cherenack K, Kattamis A, Long K, Cheng I, Wagner S, Sturm JC. SiNx barrier layers deposited at 250°C on a clear polymer substrate Mrs Proceedings. 936: 7-12. DOI: 10.1557/Proc-0936-L01-05 |
0.751 |
|
| 2006 |
Kattamis AZ, Cheng I, Hong Y, Wagner S. Amorphous Silicon 2-TFT Pixel Circuits on Stainless Steel Foils Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A16-03-L09-03 |
0.617 |
|
| 2006 |
Bhattacharya R, Salomon A, Wagner S. Fabricating Metal Interconnects for Circuits on a Spherical Dome Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2165795 |
0.601 |
|
| 2006 |
Sturm JC, Hsu PI, Gleskova H, Bhattacharya R, Wagner S. Deformable electronic surfaces International Journal of High Speed Electronics and Systems. 16: 365-374. DOI: 10.1142/9789812773081_0020 |
0.631 |
|
| 2006 |
Long K, Kattamis AZ, Cheng IC, Gleskova H, Wagner S, Sturm JC, Stevenson M, Yu G, O'Regan M. Active-matrix amorphous-silicon TFTs arrays at 180 °C on clear plastic and glass substrates for organic light-emitting displays Ieee Transactions On Electron Devices. 53: 1789-1796. DOI: 10.1109/Ted.2006.878028 |
0.446 |
|
| 2006 |
Mandlik P, Lacour SP, Li JW, Chou SY, Wagner S. Fully elastic interconnects on nanopatterned elastomeric substrates Ieee Electron Device Letters. 27: 650-652. DOI: 10.1109/Led.2006.879029 |
0.72 |
|
| 2006 |
Cheng IC, Kattamis AZ, Long K, Sturm JC, Wagner S. Self-aligned amorphous-silicon TFTs on clear plastic substrates Ieee Electron Device Letters. 27: 166-168. DOI: 10.1109/Led.2006.870247 |
0.597 |
|
| 2006 |
Long K, Kattamis AZ, Cheng IC, Gleskova H, Wagner S, Sturm JC. Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C Ieee Electron Device Letters. 27: 111-113. DOI: 10.1109/Led.2005.863147 |
0.409 |
|
| 2006 |
Kattamis AZ, Holmes RJ, Cheng IC, Long K, Sturm JC, Forrest SR, Wagner S. High mobility nanocrystalline silicon transistors on clear plastic substrates Ieee Electron Device Letters. 27: 49-51. DOI: 10.1109/Led.2005.861256 |
0.653 |
|
| 2006 |
Graz I, Kaltenbrunner M, Keplinger C, Schwödiauer R, Bauer S, Lacour SP, Wagner S. Flexible ferroelectret field-effect transistor for large-area sensor skins and microphones Applied Physics Letters. 89: 73501. DOI: 10.1063/1.2335838 |
0.393 |
|
| 2006 |
Lacour SP, Wagner S, Narayan RJ, Li T, Suo ZI. Stiff subcircuit islands of diamondlike carbon for stretchable electronics Journal of Applied Physics. 100. DOI: 10.1063/1.2210170 |
0.445 |
|
| 2006 |
Lacour SP, Chan D, Wagner S, Li T, Suo Z. Mechanisms of reversible stretchability of thin metal films on elastomeric substrates Applied Physics Letters. 88: 204103. DOI: 10.1063/1.2201874 |
0.394 |
|
| 2006 |
Bhattacharya R, Wagner S, Tung YJ, Esler J, Hack M. Plastic deformation of a continuous organic light emitting surface Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2164412 |
0.559 |
|
| 2006 |
Gleskova H, Cheng IC, Wagner S, Suo Z. Thermomechanical criteria for overlay alignment in flexible thin-film electronic circuits Applied Physics Letters. 88: 11905. DOI: 10.1063/1.2161391 |
0.435 |
|
| 2006 |
Gleskova H, Cheng IC, Wagner S, Sturm JC, Suo Z. Mechanics of thin-film transistors and solar cells on flexible substrates Solar Energy. 80: 687-693. DOI: 10.1016/J.Solener.2005.10.010 |
0.392 |
|
| 2005 |
Cheng IC, Kattamis A, Long K, Sturm JC, Wagner S. Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates Journal of the Society For Information Display. 13: 563-568. DOI: 10.1889/1.2001213 |
0.442 |
|
| 2005 |
Tsay C, Lacour SP, Wagner S, Li T, Suo Z. How Stretchable Can We Make Thin Metal Films? Mrs Proceedings. 875. DOI: 10.1557/Proc-875-O5.5 |
0.443 |
|
| 2005 |
Kattamis A, Cheng I, Long K, Sturm JC, Wagner S. Nanocrystalline Silicon Thin Film Transistors on Optically Clear Polymer Foil Substrates Mrs Proceedings. 870. DOI: 10.1557/proc-870-h2.7 |
0.316 |
|
| 2005 |
Li T, Suo Z, Lacour SP, Wagner S. Compliant thin film patterns of stiff materials as platforms for stretchable electronics Journal of Materials Research. 20: 3274-3277. DOI: 10.1557/Jmr.2005.0422 |
0.423 |
|
| 2005 |
Valentino JP, Troian SM, Wagner S. Microfluidic detection and analysis by integration of evanescent wave sensing with thermocapillary actuation Proceedings of the Ieee International Conference On Micro Electro Mechanical Systems (Mems). 730-733. DOI: 10.1109/MEMSYS.2005.1454033 |
0.632 |
|
| 2005 |
Long K, Kattamis A, Cheng IC, Gleskova H, Wagner S, Sturm JC. Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures Device Research Conference - Conference Digest, Drc. 2005: 141-142. DOI: 10.1109/DRC.2005.1553094 |
0.327 |
|
| 2005 |
Valentino JP, Troian SM, Wagner S. Microfluidic detection and analysis by integration of thermocapillary actuation with a thin-film optical waveguide Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922075 |
0.682 |
|
| 2005 |
Chen JZ, Troian SM, Darhuber AA, Wagner S. Effect of contact angle hysteresis on thermocapillary droplet actuation Journal of Applied Physics. 97: 014906. DOI: 10.1063/1.1819979 |
0.314 |
|
| 2005 |
Suo Z, Vlassak J, Wagner S. Micromechanics of macroelectronics China Particuology. 3: 321-328. DOI: 10.1016/S1672-2515(07)60210-3 |
0.343 |
|
| 2005 |
Li T, Huang Z, Xi Z, Lacour S, Wagner S, Suo Z. Delocalizing strain in a thin metal film on a polymer substrate Mechanics of Materials. 37: 261-273. DOI: 10.1016/J.Mechmat.2004.02.002 |
0.382 |
|
| 2004 |
Chen JZ, Darhuber AA, Troian SM, Wagner S. Capacitive sensing of droplets for microfluidic devices based on thermocapillary actuation. Lab On a Chip. 4: 473-80. PMID 15472731 DOI: 10.1039/B315815B |
0.312 |
|
| 2004 |
Kattamis A, Cheng I, Allen S, Wagner S. Hydrogen in Ultralow Temperature SiO 2 for Nanocrystalline Silicon Thin Film Transistors Mrs Proceedings. 814. DOI: 10.1557/Proc-814-I10.14 |
0.655 |
|
| 2004 |
Cheng I, Wagner S. Monolithically Integrated p- & n- Channel Thin Film Transistors of Nanocrystalline Silicon on Plastic Substrates Mrs Proceedings. 808. DOI: 10.1557/Proc-808-A4.6 |
0.628 |
|
| 2004 |
Jones J, Lacour SP, Wagner S, Suo Z. Stretchable wavy metal interconnects Journal of Vacuum Science and Technology. 22: 1723-1725. DOI: 10.1116/1.1756879 |
0.304 |
|
| 2004 |
Hsu PHI, Huang M, Gleskova H, Xi Z, Suo Z, Wagner S, Sturm JC. Effects of Mechanical Strain on TFTs on Spherical Domes Ieee Transactions On Electron Devices. 51: 371-377. DOI: 10.1109/Ted.2003.822873 |
0.454 |
|
| 2004 |
Lacour SP, Tsay C, Wagner S. An elastically stretchable TFT circuit Ieee Electron Device Letters. 25: 792-794. DOI: 10.1109/Led.2004.839227 |
0.394 |
|
| 2004 |
Lacour SP, Jones J, Suo Z, Wagner S. Design and performance of thin metal film interconnects for skin-like electronic circuits Ieee Electron Device Letters. 25: 179-181. DOI: 10.1109/Led.2004.825190 |
0.359 |
|
| 2004 |
Li T, Huang Z, Suo Z, Lacour SP, Wagner S. Stretchability of thin metal films on elastomer substrates Applied Physics Letters. 85: 3435-3437. DOI: 10.1063/1.1806275 |
0.4 |
|
| 2004 |
Hsu PI, Huang M, Xi Z, Wagner S, Suo Z, Sturm JC. Spherical deformation of compliant substrates with semiconductor device islands Journal of Applied Physics. 95: 705-712. DOI: 10.1063/1.1634370 |
0.352 |
|
| 2004 |
Lacour SP, Prahlad H, Pelrine R, Wagner S. Mechatronic system of dielectric elastomer actuators addressed by thin film photoconductors on plastic Sensors and Actuators, a: Physical. 111: 288-292. DOI: 10.1016/J.Sna.2003.12.009 |
0.434 |
|
| 2004 |
Wagner S, Lacour SP, Jones J, Hsu PHI, Sturm JC, Li T, Suo Z. Electronic skin: Architecture and components Physica E: Low-Dimensional Systems and Nanostructures. 25: 326-334. DOI: 10.1016/J.Physe.2004.06.032 |
0.309 |
|
| 2004 |
Lacour SP, Wagner S, Prahlad H, Pelrine R. High voltage photoconductive switches of amorphous silicon for electroactive polymer actuators Journal of Non-Crystalline Solids. 338: 736-739. DOI: 10.1016/J.Jnoncrysol.2004.03.080 |
0.495 |
|
| 2004 |
Gleskova H, Hsu PI, Xi Z, Sturm JC, Suo Z, Wagner S. Field-effect mobility of amorphous silicon thin-film transistors under strain Journal of Non-Crystalline Solids. 338: 732-735. DOI: 10.1016/J.Jnoncrysol.2004.03.079 |
0.42 |
|
| 2004 |
Cheng I, Allen S, Wagner S. Evolution of nanocrystalline silicon thin film transistor channel layers Journal of Non-Crystalline Solids. 720-724. DOI: 10.1016/J.Jnoncrysol.2004.03.076 |
0.664 |
|
| 2003 |
Wu M, Sturm JC, Wagner S. Polycrystalline Silicon Thin-Film Transistors on Flexible Steel Foil Substrates for Complementary-Metal-Oxide-Silicon Technology Solid State Phenomena. 93: 3-12. DOI: 10.4028/Www.Scientific.Net/Ssp.93.3 |
0.439 |
|
| 2003 |
Lacour SP, Wagner S, Suo Z. Stretchable conductors: Thin gold films on silicone elastomer Materials Research Society Symposium - Proceedings. 795: 193-198. DOI: 10.1557/Proc-795-U6.9 |
0.407 |
|
| 2003 |
Jordan WB, Carlson ED, Johnson TR, Wagner S. Structural Evolution of Nanocrystalline Germanium Thin Films with Film Thickness and Substrate Temperature Mrs Proceedings. 762. DOI: 10.1557/PROC-762-A6.5 |
0.318 |
|
| 2003 |
Jordan WB, Wagner S. Electrical Properties of Phosphorus-Doped and Boron-Doped Nanocrystalline Germanium Thin-Films for p-i-n Devices Mrs Proceedings. 762. DOI: 10.1557/Proc-762-A5.7 |
0.452 |
|
| 2003 |
Mulato M, Hong CM, Wagner S. Size and etching effects on the reverse current of a-Si:H p-i-n diodes Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1621416 |
0.618 |
|
| 2003 |
Lacour SP, Pelrine R, Wagner S, Prahlad H. Photoconductive high-voltage switches of thin-film amorphous silicon for EAP actuators Proceedings of Spie - the International Society For Optical Engineering. 5051: 412-418. DOI: 10.1117/12.484712 |
0.308 |
|
| 2003 |
Cheng I, Wagner S. Thin film transistors made of nanocrystalline silicon for CMOS on plastic Electronic Imaging. 5004: 179-186. DOI: 10.1117/12.476822 |
0.689 |
|
| 2003 |
Valentino JP, Darhuber AA, Troian SM, Wagner S. Thermocapillary Actuation of Liquids Using Patterned Microheater Arrays Materials Research Society Symposium - Proceedings. 773: 31-35. DOI: 10.1109/SENSOR.2003.1215561 |
0.64 |
|
| 2003 |
Darhuber AA, Valentino JP, Troian SM, Wagner S. Thermocapillary actuation of droplets on chemically patterned surfaces by programmable microheater arrays Journal of Microelectromechanical Systems. 12: 873-879. DOI: 10.1109/Jmems.2003.820267 |
0.675 |
|
| 2003 |
Miller SM, Troian SM, Wagner S. Photoresist-free printing of amorphous silicon thin-film transistors Applied Physics Letters. 83: 3207-3209. DOI: 10.1063/1.1618364 |
0.484 |
|
| 2003 |
Lacour SP, Wagner S, Huang Z, Suo Z. Stretchable gold conductors on elastomeric substrates Applied Physics Letters. 82: 2404-2406. DOI: 10.1063/1.1565683 |
0.387 |
|
| 2003 |
Darhuber AA, Valentino JP, Davis JM, Troian SM, Wagner S. Microfluidic actuation by modulation of surface stresses Applied Physics Letters. 82: 657-659. DOI: 10.1063/1.1537512 |
0.645 |
|
| 2003 |
Cheng IC, Wagner S. Nanocrystalline silicon thin film transistors Iee Proceedings: Circuits, Devices and Systems. 150: 339-344. DOI: 10.1049/ip-cds:20030573 |
0.35 |
|
| 2003 |
Wagner S, Gleskova H, Cheng I, Wu M. Silicon for thin-film transistors Thin Solid Films. 430: 15-19. DOI: 10.1016/S0040-6090(03)00121-4 |
0.658 |
|
| 2003 |
Cheng I, Wagner S. High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 °C Thin Solid Films. 427: 56-59. DOI: 10.1016/S0040-6090(02)01243-9 |
0.652 |
|
| 2002 |
Forbes CE, Gelbman A, Turner C, Gleskova H, Wagner S. 43.3: A Rugged Conformable Backplane Fabricated with an a-Si:H TFT Array on a Polyimide Substrate Sid Symposium Digest of Technical Papers. 33: 1200. DOI: 10.1889/1.1830161 |
0.327 |
|
| 2002 |
Lacour SP, Huang Z, Suo Z, Wagner S. Deformable interconnects for conformal integrated circuits Materials Research Society Symposium - Proceedings. 736: 183-188. DOI: 10.1557/Proc-736-D4.8 |
0.369 |
|
| 2002 |
Bonderover E, Wagner S, Suo Z. Amorphous silicon thin film transistors on Kapton fibers Materials Research Society Symposium - Proceedings. 736: 109-114. DOI: 10.1557/Proc-736-D2.5 |
0.409 |
|
| 2002 |
Gleskova H, Wagner S, Soboyejo W, Suo Z. Effects of Mechanical Strain on Amorphous Silicon Thin-Film Transistors Mrs Proceedings. 715. DOI: 10.1557/Proc-715-A3.4 |
0.34 |
|
| 2002 |
Jordan WB, Wagner S. Effects of Deposition Temperature and Film Thickness on the Structural, Electrical, and Optical Properties of Germanium Thin Films Mrs Proceedings. 715. DOI: 10.1557/Proc-715-A18.2 |
0.439 |
|
| 2002 |
Miller SM, Troian SM, Wagner S. Direct printing of polymer microstructures on flat and spherical surfaces using a letterpress technique Journal of Vacuum Science & Technology B. 20: 2320-2327. DOI: 10.1116/1.1520554 |
0.393 |
|
| 2002 |
Bo X, Yao N, Wagner S, Sturm JC. Spatially selective single-grain silicon films induced by hydrogen plasma seeding Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 818. DOI: 10.1116/1.1469016 |
0.41 |
|
| 2002 |
Wu M, Bo X, Sturm JC, Wagner S. Complementary metal-oxide-semiconductor thin-film transistor circuits from a high-temperature polycrystalline silicon process on steel foil substrates Ieee Transactions On Electron Devices. 49: 1993-2000. DOI: 10.1109/Ted.2002.804702 |
0.462 |
|
| 2002 |
Gleskova H, Wagner S, Soboyejo W, Suo Z. Electrical response of amorphous silicon thin-film transistors under mechanical strain Journal of Applied Physics. 92: 6224-6229. DOI: 10.1063/1.1513187 |
0.334 |
|
| 2002 |
Hsu PI, Bhattacharya R, Gleskova H, Huang M, Xi Z, Suo Z, Wagner S, Sturm JC. Thin-film transistor circuits on large-area spherical surfaces Applied Physics Letters. 81: 1723-1725. DOI: 10.1063/1.1502199 |
0.658 |
|
| 2002 |
Cheng IC, Wagner S. Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150°C Applied Physics Letters. 80: 440-442. DOI: 10.1063/1.1435798 |
0.666 |
|
| 2002 |
Gleskova H, Wagner S. Electrophotographically printed insulator Materials Letters. 52: 150-153. DOI: 10.1016/S0167-577X(01)00382-2 |
0.311 |
|
| 2002 |
Hsu PI, Gleskova H, Huang M, Suo Z, Wagner S, Sturm JC. Amorphous Si TFTs on plastically deformed spherical domes Journal of Non-Crystalline Solids. 299: 1355-1359. DOI: 10.1016/S0022-3093(01)01156-5 |
0.488 |
|
| 2002 |
Wu M, Wagner S. CMOS polycrystalline silicon circuits on steel substrates Journal of Non-Crystalline Solids. 299302: 1316-1320. DOI: 10.1016/S0022-3093(01)01153-X |
0.488 |
|
| 2002 |
Min RB, Wagner S. Nanocrystalline silicon thin-film transistors with 50-nm-thick deposited channel layer, 10 cm2V-1s-1 electron mobility and 108 on/off current ratio Applied Physics a: Materials Science and Processing. 74: 541-543. DOI: 10.1007/S003390100927 |
0.475 |
|
| 2001 |
Wagner S, Wu M, Min BR, Cheng I. Polycrystalline Silicon Thin-Film Transistors Solid State Phenomena. 325-336. DOI: 10.4028/Www.Scientific.Net/Ssp.80-81.325 |
0.664 |
|
| 2001 |
Cheng I, Wagner S, Bae S, Fonash SJ. High Electron Mobility TFTs of Nanocrystalline Silicon Deposited at 150°oC on Plastic Foil Mrs Proceedings. 664. DOI: 10.1557/Proc-664-A26.1.1 |
0.676 |
|
| 2001 |
Gleskova H, Wagner S. Electrical stability of a-Si:H TFTs fabricated at 150ºC Mrs Proceedings. 664. DOI: 10.1557/Proc-664-A19.7 |
0.421 |
|
| 2001 |
Min RB, Wagner S. Nanocrystalline Silicon TFTs With 50 nm Thick Deposited Channel Layer, 10 cm 2 /Vs Electron Mobility and 10 8 On/Off Current Ratio Mrs Proceedings. 664. DOI: 10.1557/Proc-664-A17.5 |
0.455 |
|
| 2001 |
Wu M, Wagner S. P-channel Polycrystalline Silicon Thin Film Transistors on Steel Foil Substrates Mrs Proceedings. 664. DOI: 10.1557/Proc-664-A17.2 |
0.436 |
|
| 2001 |
Gleskova H, Wagner S, Gašparík V, Kováč P. 150°C Amorphous Silicon Thin-Film Transistor Technology for Polyimide Substrates Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1373661 |
0.526 |
|
| 2001 |
Wagner S, Fonash SJ, Jackson TN, Sturm JC. Flexible display enabling technology Proceedings of Spie - the International Society For Optical Engineering. 4362: 226-244. DOI: 10.1117/12.439119 |
0.459 |
|
| 2001 |
Gleskova H, Wagner S. DC-gate-bias stressing of a-Si:H TFTs fabricated at 150/spl deg/C on polyimide foil Ieee Transactions On Electron Devices. 48: 1667-1671. DOI: 10.1109/16.936588 |
0.354 |
|
| 2001 |
Pangal K, Sturm JC, Wagner S. Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer Ieee Transactions On Electron Devices. 48: 707-714. DOI: 10.1109/16.915699 |
0.48 |
|
| 2001 |
Gleskova H, Wagner S. Electron mobility in amorphous silicon thin-film transistors under compressive strain Applied Physics Letters. 79: 3347-3349. DOI: 10.1063/1.1418254 |
0.423 |
|
| 2001 |
Darhuber AA, Troian SM, Wagner S. Physical mechanisms governing pattern fidelity in microscale offset printing Journal of Applied Physics. 90: 3602-3609. DOI: 10.1063/1.1389080 |
0.343 |
|
| 2001 |
Wu M, Wagner S. Thermal oxide of polycrystalline silicon on steel foil as a thin-film transistor gate dielectric Applied Physics Letters. 78: 3729-3731. DOI: 10.1063/1.1377319 |
0.494 |
|
| 2001 |
Wu M, Wagner S. Amorphous silicon crystallization and polysilicon thin film transistors on SiO2 passivated steel foil substrates Applied Surface Science. 175: 753-758. DOI: 10.1016/S0169-4332(01)00168-4 |
0.492 |
|
| 2001 |
Gleskova H, Wagner S, Gašparı́k V, Kováč P. Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates Applied Surface Science. 175: 12-16. DOI: 10.1016/S0169-4332(01)00050-2 |
0.494 |
|
| 2000 |
Miller SM, Darhuber AA, Troian SM, Wagner S. Offset printing of liquid microstructures for high resolution lithography Mrs Proceedings. 624. DOI: 10.1557/Proc-624-47 |
0.395 |
|
| 2000 |
Hsu PI, Huang M, Wagner S, Suo Z, Sturm JC. Plastic deformation of thin foil substrates with amorphous silicon islands into spherical shapes Mrs Proceedings. 621. DOI: 10.1557/Proc-621-Q8.6.1 |
0.402 |
|
| 2000 |
Schropp REI, Rath JK, Stannowski B, Werf CHMVD, Chen Y, Wagner S. Low Temperature Poly-Si Layers Deposited by Hot Wire CVD Yielding a Mobility of 4.0 cm 2 V −1 s −1 in Top Gate Thin Film Transistors Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A31.3 |
0.534 |
|
| 2000 |
Cheng I, Wagner S, Mulato M. Thin Film Transistors with Electron Mobility of 40 cm 2 V −1 s −1 Made from Directly Deposited Intrinsic Microcrystalline Silicon Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A31.2 |
0.671 |
|
| 2000 |
Wu M, Wagner S. Thin Film Transistors Made of Polysilicon Crystallized at 950°C on Steel Substrate Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A28.5 |
0.41 |
|
| 2000 |
Mulato M, Wagner S, Zanatta AR. Effects of SiH2Cl2 on the Deposition and Properties of Amorphous and Microcrystalline Silicon Fabricated from Very High Frequency Glow Discharges Journal of the Electrochemical Society. 147: 1829-1834. DOI: 10.1149/1.1393442 |
0.487 |
|
| 2000 |
Hong CM, Wagner S. Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors Ieee Electron Device Letters. 21: 384-386. DOI: 10.1109/55.852958 |
0.574 |
|
| 2000 |
Könenkamp R, Boedecker K, Lux-Steiner MC, Poschenrieder M, Zenia F, Levy-Clement C, Wagner S. Thin film semiconductor deposition on free-standing ZnO columns Applied Physics Letters. 77: 2575-2577. DOI: 10.1063/1.1319187 |
0.469 |
|
| 2000 |
Darhuber AA, Troian SM, Davis JM, Miller SM, Wagner S. Selective dip-coating of chemically micropatterned surfaces Journal of Applied Physics. 88: 5119-5126. DOI: 10.1063/1.1317238 |
0.346 |
|
| 2000 |
Cuk T, Troian SM, Hong CM, Wagner S. Using convective flow splitting for the direct printing of fine copper lines Materials Research Society Symposium - Proceedings. 624: 267-273. DOI: 10.1063/1.1311954 |
0.53 |
|
| 2000 |
Payne AM, Wagner S. The effect of chlorine on dopant activation in hydrogenated amorphous silicon Applied Physics Letters. 76: 2949-2951. DOI: 10.1063/1.126526 |
0.493 |
|
| 2000 |
Gleskova H, Wagner S, Suo Z. a-Si:H thin film transistors after very high strain Journal of Non-Crystalline Solids. 266: 1320-1324. DOI: 10.1016/S0022-3093(99)00944-8 |
0.417 |
|
| 2000 |
Wu M, Chen Y, Pangal K, Sturm JC, Wagner S. High-performance polysilicon thin film transistors on steel substrates Journal of Non-Crystalline Solids. 266: 1284-1288. DOI: 10.1016/S0022-3093(99)00938-2 |
0.496 |
|
| 2000 |
Mulato M, Chen Y, Wagner S, Zanatta AR. Microcrystalline silicon with high electron field-effect mobility deposited at 230°C Journal of Non-Crystalline Solids. 1260-1264. DOI: 10.1016/S0022-3093(99)00934-5 |
0.507 |
|
| 2000 |
Chen Y, Pangal K, Sturm JC, Wagner S. p Channel thin film transistor and complementary metal-oxide-silicon inverter made of microcrystalline silicon directly deposited at 320∞C Journal of Non-Crystalline Solids. 266: 1274-1278. DOI: 10.1016/S0022-3093(99)00799-1 |
0.497 |
|
| 1999 |
Ma E, Wagner S. a-Si TFTs on Thin Steel Foil Substrates: How Thin Can We Go? Mrs Proceedings. 558: 381. DOI: 10.1557/Proc-558-381 |
0.414 |
|
| 1999 |
Ma E, Wagner S. High-Performance Damascene-Gate Thin Film Transistors Mrs Proceedings. 557: 695. DOI: 10.1557/Proc-557-695 |
0.415 |
|
| 1999 |
Chen Y, Wagner S. Thin Film Transistors of Microcrystalline Silicon Deposited by Plasma Enhanced-CVD Mrs Proceedings. 557: 665. DOI: 10.1557/Proc-557-665 |
0.478 |
|
| 1999 |
Gleskova H, Wagner S, Suo Z. Rugged a-Si:H TFTs on plastic substrates Materials Research Society Symposium - Proceedings. 557: 653-658. DOI: 10.1557/Proc-557-653 |
0.42 |
|
| 1999 |
Pangal K, Chen Y, Sturm J, Wagner S. Integrated Amorphous and Polycrystalline Silicon TFTs with a Single Silicon Layer Mrs Proceedings. 557. DOI: 10.1557/Proc-557-629 |
0.497 |
|
| 1999 |
Mulato M, Ramón M, Wagner S. Step Response of a-Si:H Photodiodes Mrs Proceedings. 557. DOI: 10.1557/Proc-557-445 |
0.328 |
|
| 1999 |
Payne AM, Wagner S. Effects of Chlorine on Dopant Activation in a-Si:H Mrs Proceedings. 557. DOI: 10.1557/Proc-557-409 |
0.388 |
|
| 1999 |
Wagner S, Gleskova H, Ma EY, Suo Z. Compliant substrates for thin-film transistor backplanes Electronic Imaging. 3636: 32-39. DOI: 10.1117/12.344653 |
0.44 |
|
| 1999 |
Gleskova H, Wagner S. Amorphous silicon thin-film transistors on compliant polyimide foil substrates Ieee Electron Device Letters. 20: 473-475. DOI: 10.1109/55.784456 |
0.463 |
|
| 1999 |
Branz HM, Asher S, Gleskova H, Wagner S. Light-induced D diffusion measurements in hydrogenated amorphous silicon: testing H metastability models Physical Review B. 59: 5513-5520. DOI: 10.1103/Physrevb.59.5513 |
0.35 |
|
| 1999 |
Gleskova H, Wagner S, Suo Z. Failure resistance of amorphous silicon transistors under extreme in-plane strain Applied Physics Letters. 75: 3011-3013. DOI: 10.1063/1.125174 |
0.36 |
|
| 1999 |
Wu M, Pangal K, Sturm JC, Wagner S. High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates Applied Physics Letters. 75: 2244-2246. DOI: 10.1063/1.124978 |
0.496 |
|
| 1999 |
Pangal K, Sturm JC, Wagner S. Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Applied Physics Letters. 75: 2091-2093. DOI: 10.1063/1.124926 |
0.348 |
|
| 1999 |
Ma EY, Wagner S. Amorphous silicon transistors on ultrathin steel foil substrates Applied Physics Letters. 74: 2661-2662. DOI: 10.1063/1.123930 |
0.505 |
|
| 1999 |
Suo Z, Ma EY, Gleskova H, Wagner S. Mechanics of rollable and foldable film-on-foil electronics Applied Physics Letters. 74: 1177-1179. DOI: 10.1063/1.123478 |
0.455 |
|
| 1998 |
Montès L, Tsybeskov L, Fauchet PM, Pangal K, Sturm JC, Wagner S. Optical Analysis of Plasma Enhanced Crystallization of Amorphous Silicon Films Mrs Proceedings. 536. DOI: 10.1557/Proc-536-505 |
0.453 |
|
| 1998 |
Gleskova H, Wagner S, Suo Z. a-Si:H TFTs made on polyimide foil by PE-CVD at 150 °C Materials Research Society Symposium - Proceedings. 508: 73-78. DOI: 10.1557/Proc-508-73 |
0.532 |
|
| 1998 |
Ma EY, Wagner S. a-Si:H Thin-Film Transistors on Rollable 25-µ;m Thick Steel Foil Mrs Proceedings. 508: 13. DOI: 10.1557/Proc-508-13 |
0.471 |
|
| 1998 |
Pangal K, Sturm J, Wagner S. Effect of Plasma Treatment on Crystallization Behavior of Amorphous Silicon Films Mrs Proceedings. 507. DOI: 10.1557/Proc-507-577 |
0.405 |
|
| 1998 |
Platz R, Hof C, Wieder S, Rech B, Fischer D, Shah A, Payne A, Wagner S. Comparison of VHF, RF and DC Plasma Excitation for a-Si:H Deposition with Hydrogen Dilution Mrs Proceedings. 507: 565-570. DOI: 10.1557/Proc-507-565 |
0.384 |
|
| 1998 |
Wang F, Wolfe D, Hinds B, Lucovsky G, Platz R, Wagner S. A Study of Silicon Suboxide thin Films by Photoluminescence Mrs Proceedings. 507. DOI: 10.1557/Proc-507-267 |
0.422 |
|
| 1998 |
Platz R, Wagner S, Hof C, Shah A, Wieder S, Rech B. Influence Of Excitation Frequency, Temperature, And Hydrogen Dilution On The Stability Of Plasma Enhanced Chemical Vapor Deposited A-Si:H Journal of Applied Physics. 84: 3949-3953. DOI: 10.1063/1.368592 |
0.419 |
|
| 1998 |
Platz R, Wagner S. Intrinsic Microcrystalline Silicon By Plasma-Enhanced Chemical Vapor Deposition From Dichlorosilane Applied Physics Letters. 73: 1236-1238. DOI: 10.1063/1.122138 |
0.42 |
|
| 1998 |
Gleskova H, Wagner S, Shen DS. Photoresist-free fabrication process for a-Si:H thin film transistors Journal of Non-Crystalline Solids. 227: 1217-1220. DOI: 10.1016/S0022-3093(98)00308-1 |
0.506 |
|
| 1997 |
Theiss SD, Wu CC, Lu M, Sturm JC, Wagner S. Flexible, Lightweight Steel-Foil Substrates For a-Si:H Thin-Film Transistors Mrs Proceedings. 471. DOI: 10.1557/Proc-471-21 |
0.456 |
|
| 1997 |
Gleskova H, Wagner S, Shen D. Via hole addressed TFT and process for large-area a-Si:H electronics Mrs Proceedings. 467: 869-874. DOI: 10.1557/Proc-467-869 |
0.467 |
|
| 1997 |
Sherman S, Wagner S, Mucha J, Gottscho RA. Substrate Effect on Plasma‐Enhanced Chemical Vapor Deposited Silicon Nitride Journal of the Electrochemical Society. 144: 3198-3204. DOI: 10.1149/1.1837983 |
0.464 |
|
| 1997 |
Sirringhaus H, Kahn A, Wagner S. Self-passivated copper gates for amorphous silicon thin film transistors Electronic Imaging. 3014: 62-69. DOI: 10.1117/12.270301 |
0.376 |
|
| 1997 |
Wu CC, Theiuss SD, Gu G, Lu MH, Sturm JC, Wagner S, Forrest SR. Integration of organic LEDs and amorphous Si TFTs onto flexible and lightweight metal foil substrates Ieee Electron Device Letters. 18: 609-612. DOI: 10.1109/55.644086 |
0.47 |
|
| 1997 |
Gleskova H, Wagner S, Zhang Q, Shen DS. Via hole technology for thin-film transistor circuits Ieee Electron Device Letters. 18: 523-525. DOI: 10.1109/55.641433 |
0.423 |
|
| 1997 |
Sirringhaus H, Theiss S, Kahn A, Wagner S. Self-passivated copper gates for amorphous silicon thin-film transistors Ieee Electron Device Letters. 18: 388-390. DOI: 10.1109/55.605448 |
0.354 |
|
| 1996 |
Hautala J, Saleh Z, Westendorp JFM, Meiling H, Sherman S, Wagner S. High Deposition Rate a-Si:H for the Flat Panel Display Industry Mrs Proceedings. 424: 83. DOI: 10.1557/Proc-424-9 |
0.476 |
|
| 1996 |
Glesková H, Wagner S, Shen DS. a-Si:H TFTs patterned using laser-printed toner Mrs Proceedings. 424: 71-76. DOI: 10.1557/Proc-424-71 |
0.352 |
|
| 1996 |
Theiss SD, Wagner S. Amorphous Silicon TFTs on Steel-Foil Substrates Mrs Proceedings. 424. DOI: 10.1557/PROC-424-65 |
0.31 |
|
| 1996 |
Chen Y, Taguchi M, Wagner S. Low Temperature Growth of Nanocrystalline Silicon From SiF 4 + SiH 4 Mrs Proceedings. 424: 103. DOI: 10.1557/Proc-424-103 |
0.503 |
|
| 1996 |
Payne AM, Wagner S. Amorphous silicon films from dichlorosilane and SiH{sub 4} for solar cells Mrs Proceedings. 420. DOI: 10.1557/Proc-420-883 |
0.398 |
|
| 1996 |
Nakata J, Wagner S, Gleskova H, Stolk PA, Poate JM. Recovery kinetics of phosphorus ion-implanted a-Si:H Mrs Proceedings. 420: 653-658. DOI: 10.1557/Proc-420-653 |
0.381 |
|
| 1996 |
Theiss S, Wagner S. Amorphous silicon thin-film transistors on steel foil substrates Ieee Electron Device Letters. 17: 578-580. DOI: 10.1109/55.545776 |
0.383 |
|
| 1996 |
Gleskova H, Konenkamp R, Wagner S, Chen DS. Electrographically patterned thin-film silicon transistors Ieee Electron Device Letters. 17: 264-266. DOI: 10.1109/55.496452 |
0.424 |
|
| 1996 |
Conde JP, Silva M, Chu V, Gleskova H, Vasanth K, Wagner S, Shen D, Popovic P, Grebner S, Schwarz R. In-plane photoconductivity in amorphous silicon doping multilayers Philosophical Magazine Part B. 74: 331-347. DOI: 10.1080/01418639608240338 |
0.386 |
|
| 1996 |
Sherman S, Wagner S, Gottscho RA. Correlation between the valence‐ and conduction‐band‐tail energies in hydrogenated amorphous silicon Applied Physics Letters. 69: 3242-3244. DOI: 10.1063/1.118023 |
0.39 |
|
| 1996 |
Nakata M, Wagner S. The surface reaction in the high-rate growth of a-Si:H,Cl from SiH2Cl2 + SiH4 Journal of Non-Crystalline Solids. 198200: 995-998. DOI: 10.1016/0022-3093(96)00020-8 |
0.366 |
|
| 1996 |
Branz HM, Bullock J, Asher S, Gleskova H, Wagner S. On the lack of observable light-induced H diffusion near room temperature Journal of Non-Crystalline Solids. 198200: 441-444. DOI: 10.1016/0022-3093(95)00722-9 |
0.334 |
|
| 1996 |
Wagner S, Gleskova H, Nakata J. Equilibration and stability in undoped amorphous silicon Journal of Non-Crystalline Solids. 198200: 407-414. DOI: 10.1016/0022-3093(95)00702-4 |
0.416 |
|
| 1995 |
Sherman S, Lu P, Gottscho RA, Wagner S. TFT Performance - Material Quality Correlation for a-Si:H Deposited at high Rates Mrs Proceedings. 377: 749. DOI: 10.1557/Proc-377-749 |
0.488 |
|
| 1995 |
Caputo D, Maggi M, Masini G, Palma F, Vasanth K, Wagner S. Time Dependence of Spatial Defect Profiles in a-Si:H Solar Cells with Light-Soaking Mrs Proceedings. 377. DOI: 10.1557/Proc-377-669 |
0.369 |
|
| 1995 |
Xu X, Banerjee A, Yang J, Guha S, Vasanth K, Wagner S. Band Discontinuity Effect on a-Si:H and a-SiGe:H Solar Cells Mrs Proceedings. 377. DOI: 10.1557/Proc-377-651 |
0.405 |
|
| 1995 |
Gleskova H, Wagner S. Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? Mrs Proceedings. 377: 343-348. DOI: 10.1557/Proc-377-343 |
0.391 |
|
| 1995 |
Nakata J, Sherman S, Wagner S, Stolk PA, Poate JM. Simultaneous Relaxation of Network and Defects in Silicon-Implanted a-Si:H * Mrs Proceedings. 377: 173. DOI: 10.1557/Proc-377-173 |
0.365 |
|
| 1995 |
Gleskova N, Wagner S, Shen DS. Electrophotographic patterning of a-Si:H Mrs Proceedings. 377: 16-19. DOI: 10.1109/Amlcd.1995.540950 |
0.486 |
|
| 1995 |
Gleskova H, Wagner S, Shen DS. Electrophotographic patterning of thin-film silicon on glass foil Ieee Electron Device Letters. 16: 418-420. DOI: 10.1109/55.464803 |
0.495 |
|
| 1995 |
Xu X, Yang J, Banerjee A, Guha S, Vasanth K, Wagner S. Band edge discontinuities between microcrystalline and amorphous hydrogenated silicon alloys and their effect on solar cell performance Applied Physics Letters. 67: 2323-2325. DOI: 10.1063/1.114332 |
0.305 |
|
| 1995 |
Gleskova H, Wagner S. Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons ? Journal of Non-Crystalline Solids. 190: 157-162. DOI: 10.1016/0022-3093(95)00269-3 |
0.363 |
|
| 1994 |
Wagner S, Otto T, Bierau F. Properties of Anodically Oxidized Polycrystalline Silicon Layers Solid State Phenomena. 411-414. DOI: 10.4028/Www.Scientific.Net/Ssp.37-38.411 |
0.325 |
|
| 1994 |
Taguchi M, Wagner S. Grain Growth in Dispersions of µc-Si IN a-Si:H Mrs Proceedings. 358: 739. DOI: 10.1557/Proc-358-739 |
0.395 |
|
| 1994 |
Bullock JN, Wagner S. Amorphous Silicon Films from Dichlorosilane and Hydrogen Mrs Proceedings. 336. DOI: 10.1557/Proc-336-97 |
0.451 |
|
| 1994 |
Vasanth K, Caputo D, Wagner S, Bennett M, Bae S, Fonash S. Adjusting the Defect Profile in a-Si:H Solar Cells with Energy Resolved Electron or Laser Beams: Experiment and Modeling Mrs Proceedings. 336: 693. DOI: 10.1557/Proc-336-693 |
0.317 |
|
| 1994 |
Gleskova H, Nakata M, Wagner S. Comparison of Dark and Light-Induced Annealing of Metastable Defects in a-Si:H Mrs Proceedings. 336: 245-250. DOI: 10.1557/Proc-336-245 |
0.391 |
|
| 1994 |
Caputo D, Bullock JN, Gleskova H, Wagner S. Toward a practical model of a-Si:H defects in intensity-time-temperature space Mrs Proceedings. 336: 165-170. DOI: 10.1557/Proc-336-165 |
0.351 |
|
| 1994 |
Conde JP, Chu V, Shen DS, Wagner S. Properties Of Amorphous Silicon/Amorphous Silicon-Germanium Multilayers Journal of Applied Physics. 75: 1638-1655. DOI: 10.1063/1.356377 |
0.4 |
|
| 1994 |
Nakata M, Wagner S. Fast Growth Of Hydrogenated Amorphous Silicon From Dichlorosilane Applied Physics Letters. 65: 1940-1942. DOI: 10.1063/1.112966 |
0.459 |
|
| 1994 |
Wagner S, Vasanth K, Nakata M, Yang J, Guha S. Measuring and modelling of a-Si, Ge:H solar cells Solar Energy Materials and Solar Cells. 34: 373-377. DOI: 10.1016/0927-0248(94)90062-0 |
0.364 |
|
| 1993 |
Vasanth K, Nakata M, Wagner S, Bennett M. Measurement and Modeling of a-Si,Ge:H Solar Cell Performance After High-Intensity Light Soaking Mrs Proceedings. 297. DOI: 10.1557/Proc-297-827 |
0.367 |
|
| 1993 |
Gleskova H, Morin PA, Wagner S. Annealing the defects in a-Si:H under illumination Mrs Proceedings. 297: 589-594. DOI: 10.1557/Proc-297-589 |
0.409 |
|
| 1993 |
Nakata M, Wagner S, Magee CW, Peterson TM, Park HR. Impurity Content and Defect Density in 42 a-Si:H Films Mrs Proceedings. 297: 369. DOI: 10.1557/Proc-297-369 |
0.463 |
|
| 1993 |
Bullock JN, Rim K, Wagner S. Hydrogen Content of a-Si:H and a-Si:H,F as a Function of Chemical Annealing Mrs Proceedings. 297: 133. DOI: 10.1557/Proc-297-133 |
0.399 |
|
| 1993 |
Gleskova H, Morin PA, Wagner S. Kinetics of recovery of the light-induced defects in hydrogenated amorphous silicon under illumination Applied Physics Letters. 62: 2063-2065. DOI: 10.1063/1.109480 |
0.411 |
|
| 1993 |
Gleskova H, Skryshevsky VA, Bullock JN, Wagner S, Stuchlik J. Properties of Au/SiO2/a-Si:H solar cells with wet oxide Materials Letters. 16: 305-308. DOI: 10.1016/0167-577X(93)90197-6 |
0.329 |
|
| 1993 |
Gleskova H, Bullock JN, Wagner S. Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H Journal of Non-Crystalline Solids. 183-186. DOI: 10.1016/0022-3093(93)90521-X |
0.376 |
|
| 1993 |
Nakata M, Wagner S, Peterson TM. Do impurities affect the optoelectronic properties of a-Si:H? Journal of Non-Crystalline Solids. 179-182. DOI: 10.1016/0022-3093(93)90520-8 |
0.351 |
|
| 1992 |
Li XR, Wagner S, Bennett M, Fonash SJ. Quantum Efficiency of Textured a-Si:H P-I-N Solar Cells After High Intensity Light-Soaking Mrs Proceedings. 258. DOI: 10.1557/Proc-258-929 |
0.318 |
|
| 1992 |
Li X, Wagner S, Bennett M, Fonash S. Kinetics of Light-Induced Degradation of a-Si:H Solar Cells Compared to I-Layer Films Mrs Proceedings. 258. DOI: 10.1557/Proc-258-899 |
0.392 |
|
| 1992 |
Isomura M, Hata N, Wagner S. Dependence of the Saturation of Light-Induced Defect Density in a-Si:H on Temperature and Light Intensity Japanese Journal of Applied Physics. 31: 3500-3505. DOI: 10.1143/Jjap.31.3500 |
0.393 |
|
| 1992 |
Shen DS, Conde JP, Chu V, Aljishi S, Liu JZ, Wagner S. Amorphous silicon-germanium thin-film photodetector array Ieee Electron Device Letters. 13: 5-7. DOI: 10.1109/55.144933 |
0.417 |
|
| 1992 |
Hata N, Wagner S. A comprehensive defect model for amorphous silicon Journal of Applied Physics. 72: 2857-2872. DOI: 10.1063/1.351539 |
0.409 |
|
| 1992 |
Hata N, Isomura M, Wagner S. Temperature and intensity dependence of the saturated density of light‐induced defects in hydrogenated amorphous silicon Applied Physics Letters. 60: 1462-1464. DOI: 10.1063/1.107271 |
0.307 |
|
| 1992 |
Gleskova H, Morin PA, Bullock JN, Wagner S. Reversibility of the light-induced saturation and annealing of defects in a-Si: H Materials Letters. 13: 279-283. DOI: 10.1016/0167-577X(92)90232-9 |
0.359 |
|
| 1991 |
Yoon JH, Xu X, Kotharay M, Wagner S. Reducing the Saturated Defect Density- in a-Sl:H by Post-Growth Anneals Mrs Proceedings. 219. DOI: 10.1557/Proc-219-93 |
0.416 |
|
| 1991 |
Xu X, Isomura M, Yoon JH, Wagner S, Abelson JR. Correlation Between Freeze-In Temperature of Defect Density and Hydrogen Concentration in a-Si:H Mrs Proceedings. 219. DOI: 10.1557/Proc-219-69 |
0.337 |
|
| 1991 |
Hata N, Wagner S. The Distribution of Occupied Deep Levels in a-Si:H Determined from CPM Spectra Mrs Proceedings. 219: 611. DOI: 10.1557/Proc-219-611 |
0.353 |
|
| 1991 |
Isomura M, Hata N, Wagner S. Temperature Dependence of the Growth and Saturation of Light-Induced Defects in a-Si:H Mrs Proceedings. 219. DOI: 10.1557/Proc-219-27 |
0.374 |
|
| 1991 |
Maruyama A, Liu JZ, Chu V, Shen DS, Wagner S. Growth-induced surface state in hydrogenated and fluorinated amorphous silicon Journal of Applied Physics. 69: 2346-2355. DOI: 10.1063/1.348717 |
0.334 |
|
| 1991 |
Cabarrocas PRi, Morin P, Chu V, Conde JP, Liu JZ, Park HR, Wagner S. Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias Journal of Applied Physics. 69: 2942-2950. DOI: 10.1063/1.348605 |
0.451 |
|
| 1991 |
Isomura M, Hata N, Wagner S. The saturation of light-induced defects in hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 141: 204-215. DOI: 10.1016/S0022-3093(05)80096-1 |
0.381 |
|
| 1991 |
Isomura M, Xu X, Wagner S. What can we learn from the saturation of light-induced defects in amorphous hydrogenated silicon? Solar Cells. 30: 177-191. DOI: 10.1016/0379-6787(91)90050-Y |
0.382 |
|
| 1990 |
Aljishi S, Jin S, Ley L, Wagner S. Thermal equilibration of surface defects in hydrogenated amorphous silicon-germanium alloys. Physical Review Letters. 65: 629-632. PMID 10042972 DOI: 10.1103/Physrevlett.65.629 |
0.327 |
|
| 1990 |
Cabarrocas PRi, Morin P, Conde J, Chu V, Liu JZ, Park HR, Wagner S. Does ion Bombardment Induce a Degradation of the Electronic Properties of a-Si:H Films? Mrs Proceedings. 192. DOI: 10.1557/Proc-192-745 |
0.453 |
|
| 1990 |
Liu JZ, Shen DS, Cabarrocas PRi, Park H, Wagner S. Effect of Thermal Equilibration on Dark- and Photo-Conductivities in Undoped Amorphous Silicon-Germanium Alloys Mrs Proceedings. 192. DOI: 10.1557/Proc-192-701 |
0.369 |
|
| 1990 |
Okada Y, Wagner S. Etching Selectivity of SiF 4 and H 2 Plasmas for c-Si, a-Si:H and SiO 2 Mrs Proceedings. 192: 541. DOI: 10.1557/Proc-192-541 |
0.405 |
|
| 1990 |
Hata N, Larson E, Liu JZ, Okada Y, Park HR, Wagner S. A Comprehensive Defect Model for Amorphous Silicon Mrs Proceedings. 192. DOI: 10.1557/Proc-192-285 |
0.392 |
|
| 1990 |
Aljishi S, Jin S, Ley L, Wagner S. Thermal Equilibration Between Band Tail and Near Surface Defect States in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys Mrs Proceedings. 192. DOI: 10.1557/Proc-192-195 |
0.361 |
|
| 1990 |
Okada Y, Wagner S. Etching of Crystalline Silicon Using Germanium Tetrafluoride Journal of the Electrochemical Society. 137: 1957-1960. DOI: 10.1149/1.2086838 |
0.313 |
|
| 1990 |
Okada Y, Chen J, Campbell IH, Fauchet PM, Wagner S. Mechanism of the growth of amorphous and microcrystalline silicon from silicon tetrafluoride and hydrogen Journal of Applied Physics. 67: 1757-1760. DOI: 10.1063/1.345600 |
0.453 |
|
| 1990 |
Park HR, Liu JZ, Roca i Cabarrocas P, Maruyama A, Isomura M, Wagner S, Abelson JR, Finger F. Dependence of the saturated light‐induced defect density on macroscopic properties of hydrogenated amorphous silicon Applied Physics Letters. 57: 1440-1442. DOI: 10.1063/1.103364 |
0.413 |
|
| 1990 |
Wolff SH, Wagner S, Gibson JM, Loretto D, Robinson IK, Bean JC. Structural changes caused by H2 adsorption on the Si(111)7 × 7 surface Surface Science. 239. DOI: 10.1016/0039-6028(90)90612-C |
0.312 |
|
| 1990 |
OKADA Y, WAGNER S. ChemInform Abstract: Etching of Crystalline Silicon Using Germanium Tetrafluoride. Cheminform. 21. DOI: 10.1002/CHIN.199034308 |
0.308 |
|
| 1989 |
Liu JZ, Wagner S. Thermal activation energy of steady-state photoconductivity in undoped amorphous silicon and silicon-germanium alloys. Physical Review B. 39: 11156-11159. PMID 9947935 DOI: 10.1103/Physrevb.39.11156 |
0.351 |
|
| 1989 |
Wagner S, Wolff SH, Gibson JM. The Role of Hydrogen in Silicon Microcrystallization Mrs Proceedings. 164. DOI: 10.1557/Proc-164-161 |
0.379 |
|
| 1989 |
Okada Y, Campbell IH, Fauchet PM, Wagner S. Opto-Electronic Properties of μc-Si Grown from SiF4 and H2 by PECVD Mrs Proceedings. 164. DOI: 10.1557/Proc-164-15 |
0.482 |
|
| 1989 |
Okada Y, Chen J, Campbell IH, Fauchet PM, Wagner S. a-Si and μc-Si Grown from SiF4 with High H2 Dilution in a DC Glow Discharge Mrs Proceedings. 149. DOI: 10.1557/Proc-149-93 |
0.453 |
|
| 1989 |
Maruyama A, Liu JZ, Chu V, Shen DS, Wagner S. Surface States on a-Si:H,F Grown from SiF4 and H2 Mrs Proceedings. 149. DOI: 10.1557/Proc-149-705 |
0.357 |
|
| 1989 |
Park HR, Liu JZ, Maruyama A, Wagner S. Light-Soaking of a-Si:H,F Films Deposited from SiF 4 and H 2 Mrs Proceedings. 149: 613. DOI: 10.1557/Proc-149-613 |
0.445 |
|
| 1989 |
Chu V, Liu JZ, Conde JP, Wagner S. Hole properties of a-Si:H and a-Si,Ge:H,F alloys Mrs Proceedings. 149. DOI: 10.1557/Proc-149-509 |
0.396 |
|
| 1989 |
Pinarbasi M, Maley N, Abelson JR, Chu V, Wagner S. Carrier Transport Properties of DC Magnetron Reactive Sputtered a-Si:H Films Mrs Proceedings. 149. DOI: 10.1557/Proc-149-205 |
0.461 |
|
| 1989 |
Liu JZ, Wagner S. Steady-State Photoconductivity in Undoped Amorphous Silicon Mrs Proceedings. 149. DOI: 10.1557/Proc-149-193 |
0.344 |
|
| 1989 |
Conde JP, Shen D, Chu V, Wagner S. a-Si:H, to or from a-Si, Ge:H, F graded-bandgap structures Ieee Transactions On Electron Devices. 36: 2834-2838. DOI: 10.1109/16.40968 |
0.414 |
|
| 1989 |
Maruyama A, Shen D, Chu V, Liu J, Campbell I, Fauchet P, Wagner S. Bulk and surface properties of amorphous hydrogenated fluorinated silicon grown from SiF/sub 4/ and H/sub 2/ Ieee Transactions On Electron Devices. 36: 2853-2858. DOI: 10.1109/16.40946 |
0.323 |
|
| 1989 |
Wolff SH, Wagner S, Bean JC, Hull R, Gibson JM. Hydrogen surface coverage: Raising the silicon epitaxial growth temperature Applied Physics Letters. 55: 2017-2019. DOI: 10.1063/1.102149 |
0.419 |
|
| 1989 |
Park HR, Liu JZ, Wagner S. Saturation of the light‐induced defect density in hydrogenated amorphous silicon Applied Physics Letters. 55: 2658-2660. DOI: 10.1063/1.101965 |
0.376 |
|
| 1989 |
Chu V, Conde JP, Shen DS, Wagner S. Photocurrent collection in a Schottky barrier on an amorphous silicon‐germanium alloy structure with 1.23 eV optical gap Applied Physics Letters. 55: 262-264. DOI: 10.1063/1.101923 |
0.335 |
|
| 1989 |
Conde JP, Shen DS, Chu V, Wagner S. Electron transport in a−Si:H,F/a−Si,Ge:H,F superlattices Superlattices and Microstructures. 6: 1-5. DOI: 10.1016/0749-6036(89)90084-0 |
0.324 |
|
| 1989 |
Okada Y, Chen J, Campbell I, Fauchet P, Wagner S. Mechanism of microcrystalline silicon growth from silicon tetrafluoride and hydrogen Journal of Non-Crystalline Solids. 114: 816-818. DOI: 10.1016/0022-3093(89)90730-8 |
0.471 |
|
| 1989 |
Conde JP, Chu V, Wagner S. Breaking the isotropy of amorphous silicon-germanium alloys: Graded-bandgap and sawtooth superlattice structures Journal of Non-Crystalline Solids. 114: 693. DOI: 10.1016/0022-3093(89)90692-3 |
0.422 |
|
| 1989 |
Wagner S, Chu V, Conde JP, Liu JZ. The optoelectronic properties of a-Si, Ge:H(F) alloys Journal of Non-Crystalline Solids. 114: 453-458. DOI: 10.1016/0022-3093(89)90615-7 |
0.394 |
|
| 1989 |
Liu JZ, Maruyama A, Wagner S, Delahoy A. The steady state hole mobility lifetime product in undoped a-Si:H Journal of Non-Crystalline Solids. 114: 363-365. DOI: 10.1016/0022-3093(89)90164-6 |
0.347 |
|
| 1989 |
Cabarrocas PRi, Liu JZ, Park HR, Maruyama A, Wagner S. Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge Journal of Non-Crystalline Solids. 114: 190-192. DOI: 10.1016/0022-3093(89)90109-9 |
0.5 |
|
| 1988 |
Wolff SH, Wagner S, Loretto D, Gibson JM. Molecular Hydrogen Adsorption onto the Si(111) 7 × 7 Surface Mrs Proceedings. 138: 575. DOI: 10.1557/Proc-138-575 |
0.324 |
|
| 1988 |
Maruyama A, Shen DS, Chu V, Liu JZ, Jaroker J, Campbell I, Fauchet PM, Wagner S. Surface Condition in the Plasma-CVD of a-Si:H,F from SiF4 and H2 Mrs Proceedings. 131. DOI: 10.1557/Proc-131-203 |
0.386 |
|
| 1988 |
Conde JP, Chu V, Shen DS, Angell M, Wagner S. A New Material: a-Si,Ge:H,F in a-Si,Ge:H,F/a-Si:H,F Multilayer Structures Mrs Proceedings. 118. DOI: 10.1557/Proc-118-659 |
0.374 |
|
| 1988 |
Wagner S, Chu V, Shen DS, Conde JP, Aljishi S, Smith ZE. The Optoelectronic Properties of a-Si, Ge:H(F) Alloys * ) Mrs Proceedings. 118: 623. DOI: 10.1557/Proc-118-623 |
0.368 |
|
| 1988 |
Shen DS, Conde JP, Chu V, Aljishi S, Wagner S. Effect of Material Properties on the Performance of a-Si,Ge:H,F Photodetectors Mrs Proceedings. 118. DOI: 10.1557/Proc-118-457 |
0.371 |
|
| 1988 |
Chu V, Conde JP, Shen DS, Aljishi S, Wagner S. Light-Induced Defects in Medium and Low Gap a-Si,Ge:H,F Alloys Mrs Proceedings. 118. DOI: 10.1557/Proc-118-167 |
0.349 |
|
| 1988 |
Shen DS, Conde JP, Chu V, Liu JZ, Aljishi S, Smith ZE, Maruyama A, Wagner S. Determination of the D 0/− level in amorphous Si,Ge:H(F) by time‐of‐flight charge collection Applied Physics Letters. 53: 1542-1544. DOI: 10.1063/1.99950 |
0.359 |
|
| 1988 |
Shepard K, Smith ZE, Aljishi S, Wagner S. Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon Applied Physics Letters. 53: 1644-1646. DOI: 10.1063/1.99937 |
0.344 |
|
| 1988 |
Kolodzey J, Schwarz R, Aljishi S, Chu V, Shen DS, Fauchet PM, Wagner S. Optical and electronic properties of an amorphous silicon-germanium alloy with a 1.28 eV optical gap Applied Physics Letters. 52: 477-479. DOI: 10.1063/1.99449 |
0.599 |
|
| 1988 |
Tanguy C, Hulin D, Mourchid A, Fauchet PM, Wagner S. Free‐carrier and temperature effects in amorphous silicon thin films Applied Physics Letters. 53: 880-882. DOI: 10.1063/1.100102 |
0.467 |
|
| 1988 |
Conde JP, Aljishi S, Chu V, Shen DS, Wagner S. Optical and transport properties of a-Si:H,F/a-Si,Ge:H,F superlattices Solar Cells. 24: 223-235. DOI: 10.1016/0379-6787(88)90073-7 |
0.399 |
|
| 1987 |
Slobodin D, Aljishi S, Wagner S. Deposition of A-Ge:H by Gef 4 /H 2 Glow Discharge Mrs Proceedings. 98: 291. DOI: 10.1557/Proc-98-291 |
0.451 |
|
| 1987 |
Shen DS, Aljishi S, Smith ZE, Conde JP, Chu V, Wagner S. Time-of-Flight Measurements in a-Si:H Between Room Temperature and 130° C° Mrs Proceedings. 95: 95. DOI: 10.1557/Proc-95-95 |
0.369 |
|
| 1987 |
Smith ZE, Wagner S. Stability in Amorphous Silicon Mrs Proceedings. 95. DOI: 10.1557/Proc-95-551 |
0.363 |
|
| 1987 |
Chu V, Conde JP, Aljishi S, Shen DS, Smith ZE, Wagner S. Schottky Barriers on a-Si:H,F/a-Si,Ge:H,F Superlattices Mrs Proceedings. 95: 375. DOI: 10.1557/Proc-95-375 |
0.383 |
|
| 1987 |
Conde JP, Aljishi S, Shen DS, Chu V, Smith ZE, Wagner S. Electronic Transport Properties of a-Si:H,F/a-Si,Ge:H,F Superlattices Mrs Proceedings. 95: 369. DOI: 10.1557/Proc-95-369 |
0.371 |
|
| 1987 |
Schwarz R, Dietrich K, Goedecker S, Kolodzey J, Slobodin D, Wagner S. Temperature Dependence of Optical Properties and Minority Carrier Diffusion Length in a-SiGe:H,F Mrs Proceedings. 95. DOI: 10.1557/Proc-95-353 |
0.58 |
|
| 1987 |
Aljishi S, Shen DS, Chu V, Smith ZE, Conde JP, Kolodzey J, Slobodin D, Wagner S. Recombination and Electronic Transport in Low-Gap a-Si,Ge:H,F Alloys Mrs Proceedings. 95. DOI: 10.1557/Proc-95-323 |
0.58 |
|
| 1987 |
Chou SF, Schwarz R, Okada Y, Slobodin D, Wagner S. Hydrogen Diffusion in Undoped a-Si:H Mrs Proceedings. 95: 165. DOI: 10.1557/Proc-95-165 |
0.364 |
|
| 1987 |
Smith ZE, Chu V, Shepard K, Aljishi S, Slobodin D, Kolodzey J, Wagner S, Chu TL. Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films Applied Physics Letters. 50: 1521-1523. DOI: 10.1063/1.97819 |
0.572 |
|
| 1987 |
Schwarz R, Kolodzey JS, Wagner S, Kouzes RT. Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films Applied Physics Letters. 50: 188-190. DOI: 10.1063/1.97657 |
0.595 |
|
| 1987 |
Conde JP, Aljishi S, Shen DS, Angell M, Wagner S. Carrier transport mechanisms in a-Si:H,F/a-Si,Ge:H,F superlattices Journal of Non-Crystalline Solids. 939-942. DOI: 10.1016/0022-3093(87)90226-2 |
0.379 |
|
| 1987 |
Smith ZE, Aljishi S, Wagner S. Equilibrium between band tails and dangling bonds in a-Si:H Journal of Non-Crystalline Solids. 775-778. DOI: 10.1016/0022-3093(87)90185-2 |
0.338 |
|
| 1987 |
Fauchet PM, Hulin D, Migus A, Antonetti A, Conde JP, Wagner S. Femtosecond spectroscopy in amorphous silicon and silicon-germanium alloys Journal of Non-Crystalline Solids. 145-148. DOI: 10.1016/0022-3093(87)90034-2 |
0.348 |
|
| 1987 |
Schaefer HE, Würschum R, Schwarz R, Slobodin D, Wagner S. Reply to the comment by S. Dannefaer et al. on the paper of H. E. Schaefer et al. on “amorphous hydrogenated silicon studied by positron lifetime spectroscopy” Applied Physics A. 43: 295-296. DOI: 10.1007/Bf00635186 |
0.309 |
|
| 1986 |
Conde JP, Shen D, Campbell IH, Fauchet PM, Wagner S. The Structure of a-Si:H,F/a-Si,Ge:H,F Interfaces Mrs Proceedings. 77. DOI: 10.1557/Proc-77-629 |
0.41 |
|
| 1986 |
Smith ZE, Wagner S. Asymmetries in Amorphous Silicon Devices Mrs Proceedings. 70. DOI: 10.1557/Proc-70-525 |
0.336 |
|
| 1986 |
Kolodzey J, Aljishi S, Schwarz R, Shen DS, Quinlan S, Lyon SA, Wagner S. ELECTRON AND HOLE TRANSPORT PERPENDICULAR TO THE PLANES OF a-Si:H/a-Si,Ge:H COMPOSITIONAL SUPERLATTICES Materials Research Society Symposia Proceedings. 70: 429-434. DOI: 10.1557/Proc-70-429 |
0.605 |
|
| 1986 |
Shen DS, Kolodzey J, Slobodin D, Conde JP, Lane C, Campbell IH, Fauchet PM, Wagner S. Microcrystallinity in α-Si, Ge:H, F Alloys Mrs Proceedings. 70. DOI: 10.1557/Proc-70-301 |
0.629 |
|
| 1986 |
Chu V, Aljishi S, Slobodin D, Wagner S. Internal Photoemission Measurements for the Determination of Schottky Barrier Height on a-Si, Ge:H, F Alloys Mrs Proceedings. 70. DOI: 10.1557/Proc-70-295 |
0.374 |
|
| 1986 |
Okada Y, Slobodin D, Chou SF, Schwarz R, Wagner S. Infrared Spectroscopy of Deuterated a-Si, Ge:D, F Alloys Prepared by DC Glow Discharge Deposition Mrs Proceedings. 70. DOI: 10.1557/Proc-70-289 |
0.351 |
|
| 1986 |
Schwarz R, Okada Y, Chou SF, Kolodzey J, Slobodin D, Wagner S. FLUORINE INCORPORATION AND ANNEALING PROPERTIES OF a-Si,Ge:H,F ALLOYS STUDIED BY ELASTIC PROTON SCATTERING AND IR ABSORPTION Materials Research Society Symposia Proceedings. 70: 283-288. DOI: 10.1557/Proc-70-283 |
0.612 |
|
| 1986 |
Slobodin D, Aljishi S, Okada Y, Shen D-, Chu V, Wagner S. a-(Si, Ge):H, F Alloys Prepared from SiH 4 and GeF 4 Mrs Proceedings. 70. DOI: 10.1557/Proc-70-275 |
0.377 |
|
| 1986 |
Aljishi S, Smith ZE, Slobodin D, Kolodzey J, Chu V, Schwarz R, Wagner S. ELECTRONIC TRANSPORT AND THE DENSITY OF STATES DISTRIBUTION IN a-(Si,Ge):H,F ALLOYS Materials Research Society Symposia Proceedings. 70: 269-274. DOI: 10.1557/Proc-70-269 |
0.578 |
|
| 1986 |
Kolodzey J, Aljishi S, Smith ZE, Chu V, Schwarz R, Wagner S. MEASUREMENTS OF LIGHT-INDUCED DEGRADATION IN a-Si,Ge:H,F ALLOYS Materials Research Society Symposia Proceedings. 70: 237-242. DOI: 10.1557/Proc-70-237 |
0.591 |
|
| 1986 |
Kolodzey J, Aljishi S, Schwarz R, Slobodin D, Wagner S. Properties of a-Si, Ge: H, F alloys prepared by rf glow discharge in an ultrahigh vacuum reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 2499-2504. DOI: 10.1116/1.573717 |
0.624 |
|
| 1986 |
Chiang CL, Schwarz R, Slobodin DE, Kolodzey J, Wagner S. Measurement of the Minority-Carrier Diffusion Length in Thin Semiconductor Films Ieee Transactions On Electron Devices. 33: 1587-1592. DOI: 10.1109/T-Ed.1986.22711 |
0.611 |
|
| 1986 |
Kolodzey J, Schwarz R, Aljishi S, Shen DS, Campbell I, Fauchet PM, Lyon SA, Wagner S. Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys Superlattices and Microstructures. 2: 391-396. DOI: 10.1016/0749-6036(86)90054-6 |
0.605 |
|
| 1986 |
Kalema VN, Aljishi S, Dawson RMA, Slobodin D, Wagner S. The dielectric constants of a-Si,Ge: H,F alloys Materials Letters. 4: 320-322. DOI: 10.1016/0167-577X(86)90034-0 |
0.36 |
|
| 1986 |
Schaefer HE, Würschum R, Schwarz R, Slobodin D, Wagner S. Amorphous hydrogenated silicon studied by positron lifetime spectroscopy Applied Physics A. 40: 145-149. DOI: 10.1007/Bf00617395 |
0.414 |
|
| 1985 |
Smith ZE, Wagner S. A Carrier Lifetime Model for the Optical Degradation of Amorphous Silicon Solar Cells Mrs Proceedings. 49. DOI: 10.1557/Proc-49-331 |
0.331 |
|
| 1985 |
Slobodin D, Aljishi S, Schwarz R, Wagner S. Preparation of α-(Si.Ge):H Alloys by D.C. Glow Discharge Deposition Mrs Proceedings. 49. DOI: 10.1557/Proc-49-153 |
0.369 |
|
| 1985 |
Schwarz R, Slobodin D, Wagner S. Differential surface photovoltage measurement of minority‐carrier diffusion length in thin films Applied Physics Letters. 47: 740-742. DOI: 10.1063/1.96023 |
0.339 |
|
| 1985 |
Schwarz R, Wagner S, Kouzes RT, Wieting RD. Composition of amorphous (Si,Ge):H films from nuclear elastic scattering of 12 MeV protons Applied Physics Letters. 46: 552-554. DOI: 10.1063/1.95535 |
0.465 |
|
| 1985 |
Hayes RE, Gibart P, Chevrier J, Wagner S. A stability criterion for tunnel diode interconnect junctions in cascade solar cells Solar Cells. 15: 231-238. DOI: 10.1016/0379-6787(85)90080-8 |
0.316 |
|
| 1985 |
Smith ZE, Wagner S. Dangling bond density and solar cell performance in amorphous silicon Journal of Non-Crystalline Solids. 1461-1464. DOI: 10.1016/0022-3093(85)90929-9 |
0.341 |
|
| 1985 |
Kolodzey J, Slobodin D, Aljishi S, Quinlan S, Schwarz R, Shen DS, Fauchet PM, Wagner S. Transport properties of α-Si, Ge:H alloys prepared from SiF4, GeF4 and H2 in R.F. or D.C. Glow discharges Journal of Non-Crystalline Solids. 77: 897-900. DOI: 10.1016/0022-3093(85)90805-1 |
0.58 |
|
| 1984 |
Burleigh TD, Wagner S, Ciszek TF. Ellipsometry of randomly rough oxidized silicon surfaces Solar Cells. 13: 179-183. DOI: 10.1016/0379-6787(84)90007-3 |
0.329 |
|
| 1983 |
Gobrecht J, Potter R, Nottenburg R, Wagner S. An n ‐ CdSe / SnO2 / n ‐ Si Tandem Electrochemical Solar Cell Journal of the Electrochemical Society. 130: 2280-2283. DOI: 10.1149/1.2119569 |
0.394 |
|
| 1981 |
Gobrecht J, Nottenburg R, Chewey K, Wagner S. V2O5-Si photovoltaic cells Solar Cells. 4: 179-186. DOI: 10.1016/0379-6787(81)90068-5 |
0.365 |
|
| 1980 |
Hogan S, Wagner S, Barnes F. Measurement of the resistivity of thin CdS films on brass substrates Solar Cells. 1: 323-326. DOI: 10.1016/0379-6787(80)90088-5 |
0.34 |
|
| 1980 |
Burleigh TD, Wagner S, Ciszek TF. Ellipsometry of thin silicon dioxide films on rough polycrystalline silicon surfaces Solar Cells. 1: 272. DOI: 10.1016/0379-6787(80)90075-7 |
0.463 |
|
| 1979 |
Hogan S, Wagner S, Barnes FS. Resistivity measurement of thin semiconductor films on metallic substrates Applied Physics Letters. 35: 77-78. DOI: 10.1063/1.90899 |
0.369 |
|
| 1978 |
Mohapatra SK, Wagner S. EMF Measurements on Electrochromic Amorphous Li x WO 3 Films Journal of the Electrochemical Society. 125: 1603-1604. DOI: 10.1149/1.2131252 |
0.368 |
|
| 1977 |
Shay JL, Wagner S, Bettini M, Bachmann KJ, Buehler E. InP-CdS Solar Cells Ieee Transactions On Electron Devices. 483-486. DOI: 10.1109/T-Ed.1977.18763 |
0.335 |
|
| 1977 |
Bettini M, Bachmann KJ, Buehler E, Shay JL, Wagner S. Preparation of CdS/InP solar cells by chemical vapor deposition of CdS Journal of Applied Physics. 48: 1603-1606. DOI: 10.1063/1.323840 |
0.31 |
|
| 1977 |
Bachmann KJ, Buehler E, Shay JL, Wagner S, Bettini M. Preparation Of P‐Type Indium Phosphide Films On Insulating And Conducting Substrates Via Chemical Vapor Deposition Cheminform. 8. DOI: 10.1002/Chin.197705006 |
0.428 |
|
| 1976 |
Bachmann KJ, Buehler E, Shay JL, Wagner S, Bettini M. Preparation of p-Type InP Films on Insulating and Conducting Substrates via Chemical Vapor Deposition Journal of the Electrochemical Society. 123: 1509-1513. DOI: 10.1149/1.2132628 |
0.406 |
|
| 1976 |
Bachmann KJ, Buehler E, Shay JL, Wagner S. Polycrystalline thin-film InP/CdS solar cell Applied Physics Letters. 29: 121-123. DOI: 10.1063/1.88964 |
0.331 |
|
| 1975 |
Wagner S, Povilonis EI. Interface States and Fixed Charge as a Function of Small Changes in Orientation of (111) Silicon Wafers Journal of the Electrochemical Society. 122: 86-88. DOI: 10.1149/1.2134168 |
0.315 |
|
| 1975 |
Wagner S, Povilonis EI. Interface States And Fixed Charge As A Function Of Small Changes In Orientation Of (111) Silicon Wafers Cheminform. 6. DOI: 10.1002/Chin.197513016 |
0.315 |
|
| 1975 |
Wagner S, Povilonis EI. Diffusion Of Gallium Through Silicon Dioxide Films Into Silicon Cheminform. 6. DOI: 10.1002/Chin.197506011 |
0.45 |
|
| 1974 |
McCaughan DV, Kushner RA, Wagner S. Complete Removal of Sodium from Silicon Dioxide Films by Formation of Phosphosilicate Glass Journal of the Electrochemical Society. 121: 724-725. DOI: 10.1149/1.2401898 |
0.449 |
|
| 1974 |
Wagner S, Povilonis EI. Diffusion of Gallium Through Silicon Dioxide Films into Silicon Journal of the Electrochemical Society. 121: 1487-1496. DOI: 10.1149/1.2401716 |
0.45 |
|
| 1974 |
Wagner S. Preparation and properties of green-light-emitting CdS-CuGaS2 heterodiodes Journal of Applied Physics. 45: 246-251. DOI: 10.1063/1.1662968 |
0.31 |
|
| 1974 |
Mccaughan DV, Kushner RA, Wagner S. Complete Removal Of Sodium From Silicon Dioxide Films By Formation Of Phosphosilicate Glass Cheminform. 5. DOI: 10.1002/Chin.197432020 |
0.449 |
|
| 1972 |
Wagner S. Diffusion of Boron from Shallow Ion Implants in Silicon Journal of the Electrochemical Society. 119: 1570-1576. DOI: 10.1149/1.2404044 |
0.329 |
|
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