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Siddarth G. Sundaresan, Ph.D. - Publications

Affiliations: 
2008 George Mason University, Washington, DC 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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37 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Rugen S, Sundaresan S, Singh R, Kaminski N. Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions Materials Science Forum. 1004: 464-471. DOI: 10.4028/Www.Scientific.Net/Msf.1004.464  0.328
2019 Sundaresan S, Mulpuri V, Jeliazkov S, Singh R. Avalanche Robustness of 4600 V SiC DMOSFETs Materials Science Forum. 963: 777-781. DOI: 10.4028/Www.Scientific.Net/Msf.963.777  0.318
2019 Sundaresan S, Mulpuri V, Singh R. Surge Current and Avalanche Robustness of Commercial 1200 V SiC Schottky Diodes Materials Science Forum. 963: 544-548. DOI: 10.4028/Www.Scientific.Net/Msf.963.544  0.36
2018 Sundaresan S, Jeliazkov S, Singh R. 4600 V Sic Dmosfets with RDS,On = 17 mΩ-cm2 Materials Science Forum. 924: 703-706. DOI: 10.4028/Www.Scientific.Net/Msf.924.703  0.341
2016 Sundaresan S, Grummel B, Singh R. Comparison of Energy Losses in High-Current 1700 V Switches Materials Science Forum. 858: 933-936. DOI: 10.4028/Www.Scientific.Net/Msf.858.933  0.461
2016 Sundaresan S, Grummel B, Singh R. Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs Materials Science Forum. 858: 807-811. DOI: 10.4028/Www.Scientific.Net/Msf.858.807  0.375
2016 Sundaresan S, Singh R. Breakthrough performance, reliability and robustness of SiC Junction Transistors Mrs Advances. 1: 3619-3630. DOI: 10.1557/Adv.2016.418  0.304
2015 Sundaresan S, Singh R. Comparison of turn-off strategies for SiC Thyristors Materials Science Forum. 821: 889-892. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.889  0.387
2015 Sundaresan S, Grummel B, Hamilton D, Singh R. Improvement of the current gain stability of SiC junction transistors Materials Science Forum. 821: 822-825. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.822  0.351
2015 Singh R, Sundaresan S. Fulfilling the promise of high-temperature operation with silicon carbide devices: Eliminating bulky thermal-management systems with SJTs Ieee Power Electronics Magazine. 2: 27-35. DOI: 10.1109/Mpel.2014.2383328  0.363
2014 Sundaresan SG, Jeliazkov S, Grummel B, Singh R. Rapidly maturing SiC junction transistors featuring current gain (β)> 130, blocking voltages up to 2700 v and stable long-term operation Materials Science Forum. 778: 1001-1004. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.1001  0.351
2014 Sundaresan S, Grummel B, Singh R. Silicon carbide junction transistors and schottky rectifiers optimized for 250°C operation Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.531  0.454
2012 Sundaresan S, Sturdevant C, Marripelly M, Lieser E, Singh R. 12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes Materials Science Forum. 717: 949-952. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.949  0.436
2012 Sundaresan SG, Sturdevant C, Issa H, Marripelly M, Lieser E, Singh R. Hybrid Si-IGBT/SiC rectifier co-packs and SiC JBS rectifiers offering superior surge current capability and reduced power losses Materials Science Forum. 717: 945-948. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.945  0.454
2012 Zhang J, Chung G, Sanchez E, Loboda MJ, Sundaresan S, Singh R. Progress in growth of thick epitaxial layers on 4 degree off-axis 4H SiC substrates Materials Science Forum. 717: 137-140. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.137  0.424
2012 Thirumalai RVKG, Krishnan B, Levin I, Davydov AV, Sundaresan S, Neil Merrett J, Koshka Y. Growth of SiC nanowires on different planes of 4H-SiC substrates Materials Science Forum. 717: 1279-1282. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.1279  0.307
2012 Sundaresan SG, Lieser E, Singh R. Integrated SiC anode switched thyristor modules for smart-grid applications Materials Science Forum. 717: 1159-1162. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.1159  0.374
2012 Sundaresan SG, Soe AM, Singh R. Stability of electrical characteristics of SiC "super" junction transistors under long-term DC and pulsed operation at various temperatures Materials Research Society Symposium Proceedings. 1433: 1-6. DOI: 10.1557/Opl.2012.1032  0.337
2012 Sundaresan SG, Soe AM, Jeliazkov S, Singh R. Characterization of the stability of current gain and avalanche-mode operation of 4H-SiC BJTs Ieee Transactions On Electron Devices. 59: 2795-2802. DOI: 10.1109/Ted.2012.2210048  0.316
2012 Williams EH, Davydov AV, Motayed A, Sundaresan SG, Bocchini P, Richter LJ, Stan G, Steffens K, Zangmeister R, Schreifels JA, Rao MV. Immobilization of streptavidin on 4H-SiC for biosensor development Applied Surface Science. 258: 6056-6063. DOI: 10.1016/J.Apsusc.2012.02.137  0.351
2011 Chung G, Loboda MJ, Zhang J, Wan JW, Carlson EP, Toth TJ, Stahlbush RE, Skowronski M, Berechman R, Sundaresan SG, Singh R. 4H-SiC epitaxy with very smooth surface and low basal plane dislocation on 4 degree off-axis wafer Materials Science Forum. 679: 123-126. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.123  0.377
2011 Krishnan B, Thirumalai RVKG, Koshka Y, Sundaresan S, Levin I, Davydov AV, Merrett JN. Substrate-dependent orientation and polytype control in SiC nanowires grown on 4H-SiC substrates Crystal Growth and Design. 11: 538-541. DOI: 10.1021/Cg101405U  0.328
2010 Chung GY, Loboda MJ, Sundaresan SG, Singh R. Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes Materials Science Forum. 905-908. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.905  0.364
2010 Krishnan B, Kotamraju S, Sundaresan S, Koshka Y. SiC nanowires grown on 4H-SiC substrates by chemical vapor deposition Materials Science Forum. 645: 187-190. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.187  0.416
2010 Sundaresan SG, Issa H, Veereddy D, Singh R. Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Materials Science Forum. 645: 1021-1024. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.1021  0.369
2010 Aluri GS, Gowda M, Mahadik NA, Sundaresan SG, Rao MV, Schreifels JA, Freitas JA, Qadri SB, Tian YL. Microwave annealing of Mg-implanted and in situ Be-doped GaN Journal of Applied Physics. 108. DOI: 10.1063/1.3493266  0.622
2009 Kotamraju S, Krishnan B, Koshka Y, Sundaresan S, Issa H, Singh R. Silicon carbide nanowires grown on 4H-SiC substrates by chemical vapor deposition Materials Research Society Symposium Proceedings. 1178: 103-108. DOI: 10.1557/Proc-1178-Aa03-06  0.417
2009 Mahadik NA, Qadri SB, Sundaresan SG, Rao MV, Tian Y, Zhang Q. Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layers Surface and Coatings Technology. 203: 2625-2627. DOI: 10.1016/J.Surfcoat.2009.02.081  0.689
2008 Sundaresan SG, Mahadik NA, Qadri SB, Schreifels JA, Tian YL, Zhang Q, Gomar-Nadal E, Rao MV. Ultra-low resistivity Al+ implanted 4H-SiC obtained by microwave annealing and a protective graphite cap Solid-State Electronics. 52: 140-145. DOI: 10.1016/J.Sse.2007.06.021  0.711
2008 Usikov A, Kovalenkov O, Soukhoveev V, Ivantsov V, Syrkin A, Dmitriev V, Nikiforov AY, Sundaresan SG, Jeliazkov SJ, Davydov AV. Electrical and optical properties of thick highly doped p-type GaN layers grown by HVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1829-1831. DOI: 10.1002/Pssc.200778685  0.37
2008 Syrkin AL, Ivantsov V, Usikov A, Dmitriev VA, Chambard G, Ruterana P, Davydov AV, Sundaresan SG, Lutsenko E, Mudryi AV, Readinger ED, Chern-Metcalfe GD, Wraback M. InN layers grown by the HVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1792-1794. DOI: 10.1002/Pssc.200778646  0.37
2007 Shah JJ, Sundaresan SG, Geist J, Reyes DR, Booth JC, Rao MV, Gaitan M. Microwave dielectric heating of fluids in an integrated microfluidic device Journal of Micromechanics and Microengineering. 17: 2224-2230. DOI: 10.1088/0960-1317/17/11/008  0.529
2007 Sundaresan SG, Murthy M, Rao MV, Schreifels JA, Mastro MA, Eddy CR, Holm RT, Henry RL, Freitas JA, Gomar-Nadal E, Vispute RD, Tian YL. Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps Semiconductor Science and Technology. 22: 1151-1156. DOI: 10.1088/0268-1242/22/10/012  0.525
2007 Sundaresan SG, Rao MV, Tian YL, Ridgway MC, Schreifels JA, Kopanski JJ. Ultrahigh-temperature microwave annealing of Al+- And P +-implanted 4H-SiC Journal of Applied Physics. 101. DOI: 10.1063/1.2717016  0.452
2007 Sundaresan SG, Davydov AV, Vaudin MD, Levin I, Maslar JE, Tian YL, Rao MV. Growth of silicon carbide nanowires by a microwave heating-assisted physical vapor transport process using group VIII metal catalysts Chemistry of Materials. 19: 5531-5537. DOI: 10.1021/Cm071213R  0.338
2007 Sundaresan SG, Tian Yl, Ridgway MC, Mahadik NA, Qadri SB, Rao MV. Solid-state microwave annealing of ion-implanted 4H-SiC Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 616-619. DOI: 10.1016/J.Nimb.2007.04.018  0.7
2007 Sundaresan SG, Rao MV, Tian Y, Schreifels JA, Wood MC, Jones KA, Davydov AV. Comparison of solid-state microwave annealing with conventional furnace annealing of ion-implanted SiC Journal of Electronic Materials. 36: 324-331. DOI: 10.1007/S11664-006-0032-1  0.576
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