| Year |
Citation |
Score |
| 2019 |
Masten HN, Phillips JD, Peterson RL. Ternary Alloy Rare-Earth Scandate as Dielectric for $\beta$ -Ga2O3 MOS Structures Ieee Transactions On Electron Devices. 66: 2489-2495. DOI: 10.1109/Ted.2019.2911237 |
0.36 |
|
| 2019 |
Chen C, Stoica VA, Schaller RD, Clarke R, Phillips JD. Carrier dynamics of intermediate sub-bandgap transitions in ZnTeO Journal of Applied Physics. 126: 135701. DOI: 10.1063/1.5111927 |
0.331 |
|
| 2019 |
Easley J, Martin CR, Ettenberg MH, Phillips J. InGaAs/GaAsSb Type-II Superlattices for Short-Wavelength Infrared Detection Journal of Electronic Materials. 48: 6025-6029. DOI: 10.1007/S11664-019-07441-X |
0.44 |
|
| 2018 |
Ahn M, Cahyadi R, Wendorf J, Bowen W, Torralva B, Yalisove S, Phillips J. Low damage electrical modification of 4H-SiC via ultrafast laser irradiation Journal of Applied Physics. 123: 145106. DOI: 10.1063/1.5020445 |
0.31 |
|
| 2018 |
Easley J, Arkun E, Cui B, Carmody M, Peng L, Grayson M, Phillips J. Analysis of Carrier Transport in n -Type Hg 1−x Cd x Te with Ultra-Low Doping Concentration Journal of Electronic Materials. 47: 5699-5704. DOI: 10.1007/S11664-018-6431-2 |
0.415 |
|
| 2017 |
Moon E, Blaauw D, Phillips JD. Infrared Energy Harvesting in Millimeter-Scale GaAs Photovoltaics. Ieee Transactions On Electron Devices. 64: 4554-4560. PMID 29129936 DOI: 10.1109/Ted.2017.2746094 |
0.355 |
|
| 2017 |
Moon E, Blaauw D, Phillips JD. Small-Area Si Photovoltaics for Low-Flux Infrared Energy Harvesting Ieee Transactions On Electron Devices. 64: 15-20. DOI: 10.1109/Ted.2016.2626246 |
0.317 |
|
| 2017 |
Ramiro I, Antolin E, Hwang J, Teran A, Martin AJ, Linares PG, Millunchick J, Phillips J, Marti A, Luque A. Three-Bandgap Absolute Quantum Efficiency in GaSb/GaAs Quantum Dot Intermediate Band Solar Cells Ieee Journal of Photovoltaics. 7: 508-512. DOI: 10.1109/Jphotov.2016.2637658 |
0.604 |
|
| 2017 |
Ramiro I, Villa J, Tablero C, Antolín E, Luque A, Martí A, Hwang J, Phillips J, Martin AJ, Millunchick J. Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics Physical Review B. 96: 125422. DOI: 10.1103/Physrevb.96.125422 |
0.628 |
|
| 2017 |
Easley J, Arkun E, Carmody M, Phillips J. Variable-Field Hall Effect Analysis of HgCdTe Epilayers with Very Low Doping Density Journal of Electronic Materials. 46: 5479-5483. DOI: 10.1007/S11664-017-5586-6 |
0.369 |
|
| 2016 |
Teran AS, Moon E, Lim W, Kim G, Lee I, Blaauw D, Phillips JD. Energy Harvesting for GaAs Photovoltaics Under Low-Flux Indoor Lighting Conditions. Ieee Transactions On Electron Devices. 63: 2820-2825. PMID 28133394 DOI: 10.1109/Ted.2016.2569079 |
0.325 |
|
| 2016 |
DeJarld M, Teran A, Luengo-Kovac M, Yan L, Moon ES, Beck S, Guillen C, Sih V, Phillips J, Milunchick JM. The effect of doping on low temperature growth of high quality GaAs nanowires on polycrystalline films. Nanotechnology. 27: 495605. PMID 27834310 DOI: 10.1088/0957-4484/27/49/495605 |
0.424 |
|
| 2016 |
Sengupta S, Templeman T, Chen C, Moon E, Shandalov M, Ezersky V, Phillips J, Golan Y. Chemical epitaxy and interfacial reactivity in solution deposited PbS on ZnTe Journal of Materials Chemistry C. 4: 1996-2002. DOI: 10.1039/C5Tc04147C |
0.363 |
|
| 2015 |
Teran AS, Wong J, Lim W, Kim G, Lee Y, Blaauw D, Phillips JD. AlGaAs Photovoltaics for Indoor Energy Harvesting in mm-Scale Wireless Sensor Nodes Ieee Transactions On Electron Devices. 62: 2170-2175. DOI: 10.1109/Ted.2015.2434336 |
0.3 |
|
| 2015 |
Teran AS, Chen C, López E, Linares PG, Artacho I, Martí A, Luque A, Phillips JD. Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnTe/n-ZnSe Solar Cells Ieee Journal of Photovoltaics. 5: 874-877. DOI: 10.1109/Jphotov.2015.2411057 |
0.366 |
|
| 2015 |
Plis E, Myers S, Ramirez D, Smith EP, Rhiger D, Chen C, Phillips JD, Krishna S. Dual color longwave InAs/GaSb type-II strained layer superlattice detectors Infrared Physics and Technology. 70: 93-98. DOI: 10.1016/J.Infrared.2014.09.027 |
0.544 |
|
| 2014 |
Plis E, Kutty MN, Myers S, Krishna S, Chen C, Phillips JD. Passivation of long-wave infrared InAs/GaSb superlattice detectors with epitaxially grown ZnTe Proceedings of Spie - the International Society For Optical Engineering. 9070. DOI: 10.1117/12.2050490 |
0.546 |
|
| 2014 |
Hwang J, Lee K, Teran A, Forrest S, Phillips JD, Martin AJ, Millunchick J. Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells Physical Review Applied. 1. DOI: 10.1103/Physrevapplied.1.051003 |
0.576 |
|
| 2014 |
Lin AS, Phillips JD. Resolving spectral overlap issue of intermediate band solar cells using non‐uniform sub‐bandgap state filling Progress in Photovoltaics. 22: 1062-1069. DOI: 10.1002/Pip.2358 |
0.348 |
|
| 2013 |
Foley JM, Phillips JD. Suspended Si/air high contrast subwavelength gratings for long-wavelength infrared reflectors Proceedings of Spie - the International Society For Optical Engineering. 8633. DOI: 10.1117/12.2014532 |
0.312 |
|
| 2013 |
Chen C, Kim SJ, Pan XQ, Phillips JD. Epitaxial growth of ZnTe on GaSb(100) using in situ ZnCl2 surface clean Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 03C118. DOI: 10.1116/1.4796108 |
0.324 |
|
| 2013 |
Chi H, Chen C, Phillips JD, Uher C. Transport properties of ZnTe:N thin films Applied Physics Letters. 103. DOI: 10.1063/1.4816815 |
0.38 |
|
| 2013 |
Martin AJ, Hwang J, Marquis EA, Smakman E, Saucer TW, Rodriguez GV, Hunter AH, Sih V, Koenraad PM, Phillips JD, Millunchick J. The disintegration of GaSb/GaAs nanostructures upon capping Applied Physics Letters. 102. DOI: 10.1063/1.4796036 |
0.598 |
|
| 2012 |
Das A, Heo J, Bayraktaroglu A, Guo W, Ng TK, Phillips J, Ooi BS, Bhattacharya P. Room temperature strong coupling effects from single ZnO nanowire microcavity. Optics Express. 20: 11830-7. PMID 22714170 DOI: 10.1364/Oe.20.011830 |
0.732 |
|
| 2012 |
Foley JM, Itsuno AM, Das T, Velicu S, Phillips JD. Broadband long-wavelength infrared Si/SiO2 subwavelength grating reflector. Optics Letters. 37: 1523-5. PMID 22555725 DOI: 10.1364/Ol.37.001523 |
0.759 |
|
| 2012 |
Siddiqui JJ, Phillips JD, Leedy K, Bayraktaroglu B. Illumination instabilities in ZnO/HfO 2 thin-film transistors and influence of grain boundary charge Journal of Materials Research. 27: 2199-2204. DOI: 10.1557/Jmr.2012.173 |
0.796 |
|
| 2012 |
Velicu S, Zhao J, Morley M, Itsuno AM, Phillips JD. Theoretical and experimental investigation of MWIR HgCdTe nBn detectors Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.904916 |
0.805 |
|
| 2012 |
Siddiqui JJ, Phillips JD, Leedy K, Bayraktaroglu B. Bias-temperature-stress characteristics of ZnO/HfO 2 thin-film transistors Ieee Transactions On Electron Devices. 59: 1488-1493. DOI: 10.1109/Ted.2012.2189048 |
0.787 |
|
| 2012 |
Kim SJ, Juang B, Wang W, Jokisaari JR, Chen C, Phillips JD, Pan XQ. Evolution of self-assembled type-II ZnTe/ZnSe nanostructures: Structural and electronic properties Journal of Applied Physics. 111: 093524. DOI: 10.1063/1.4705385 |
0.362 |
|
| 2012 |
Itsuno AM, Phillips JD, Velicu S. Mid-wave infrared HgCdTe nBn photodetector Applied Physics Letters. 100. DOI: 10.1063/1.4704359 |
0.797 |
|
| 2012 |
Hwang J, Martin AJ, Millunchick JM, Phillips JD. Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion Journal of Applied Physics. 111: 74514. DOI: 10.1063/1.3703467 |
0.601 |
|
| 2012 |
Itsuno AM, Phillips JD, Velicu S. Design of an auger-suppressed unipolar HgCdTe NBmN photodetector Journal of Electronic Materials. 41: 2886-2892. DOI: 10.1007/S11664-012-1992-Y |
0.801 |
|
| 2011 |
Itsuno AM, Phillips JD, Gilmore AS, Velicu S. Calculated performance of an Auger-suppressed unipolar HgCdTe photodetector for high temperature operation Proceedings of Spie - the International Society For Optical Engineering. 8155. DOI: 10.1117/12.893732 |
0.805 |
|
| 2011 |
Velicu S, Grein CH, Itsuno A, Phillips JD. VLWIR high operating temperature non-equilibrium photovoltaic HgCdTe devices Proceedings of Spie. 7945. DOI: 10.1117/12.873470 |
0.794 |
|
| 2011 |
Itsuno AM, Phillips JD, Velicu S. Predicted performance improvement of Auger-suppressed HgCdTe photodiodes and p-n heterojunction detectors Ieee Transactions On Electron Devices. 58: 501-507. DOI: 10.1109/Ted.2010.2093577 |
0.805 |
|
| 2011 |
Siddiqui JJ, Phillips JD, Leedy K, Bayraktaroglu B. Admittance spectroscopy of interface states in ZnO/HfO2 thin-film electronics Ieee Electron Device Letters. 32: 1713-1715. DOI: 10.1109/Led.2011.2170399 |
0.794 |
|
| 2011 |
Hwang J, Phillips JD. Band structure of strain-balanced GaAsBi/GaAsN superlattices on GaAs Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.195327 |
0.368 |
|
| 2011 |
Kim S, Wang W, Phillips J, Pan X. Atomic Resolution TEM Study on Quantum Dots in ZnSe/ZnTe Heterostructure Microscopy and Microanalysis. 17: 1646-1647. DOI: 10.1017/S143192761100910X |
0.314 |
|
| 2011 |
Wang W, Yang J, Zhu X, Phillips J. Intermediate-band solar cells based on dilute alloys and quantum dots Frontiers of Optoelectronics in China. 4: 2-11. DOI: 10.1007/S12200-011-0151-Z |
0.361 |
|
| 2011 |
Wang W, Phillips JD, Kim SJ, Pan X. ZnO/ZnSe/ZnTe Heterojunctions for ZnTe-Based Solar Cells Journal of Electronic Materials. 40: 1674-1678. DOI: 10.1007/S11664-011-1641-X |
0.406 |
|
| 2011 |
Itsuno AM, Phillips JD, Velicu S. Design and modeling of HgCdTe nBn detectors Journal of Electronic Materials. 40: 1624-1629. DOI: 10.1007/S11664-011-1614-0 |
0.803 |
|
| 2010 |
Itsuno AM, Emelie PY, Phillips JD, Velicu S, Grein CH, Wijewarnasuriya PS. Arsenic diffusion study in HgCdTe for low ρ-type doping in auger-suppressed photodiodes Journal of Electronic Materials. 39: 945-950. DOI: 10.1007/S11664-010-1157-9 |
0.763 |
|
| 2009 |
Lin AS, Phillips JD. Drift-Diffusion Modeling for Impurity Photovoltaic Devices Ieee Transactions On Electron Devices. 56: 3168-3174. DOI: 10.1109/Ted.2009.2032741 |
0.373 |
|
| 2009 |
Bowen WE, Wang W, Phillips JD. Complementary thin-film electronics based on n-channel ZnO and p-channel ZnTe Ieee Electron Device Letters. 30: 1314-1316. DOI: 10.1109/Led.2009.2033949 |
0.788 |
|
| 2009 |
Emelie PY, Phillips JD, Velicu S, Wijewarnasuriya PS. Parameter extraction of HgCdTe infrared photodiodes exhibiting Auger suppression Journal of Physics D. 42: 234003. DOI: 10.1088/0022-3727/42/23/234003 |
0.342 |
|
| 2009 |
Krishna S, Phillips J, Ghosh S, Ma J, Sabarinanthan J, Stiff-Roberts A, Xu J, Zhou W. Frontiers in semiconductor-based devices Journal of Physics D: Applied Physics. 42: 230301-230301. DOI: 10.1088/0022-3727/42/23/230301 |
0.769 |
|
| 2009 |
Wang W, Lin AS, Phillips JD, Metzger WK. Generation and recombination rates at ZnTe:O intermediate band states Applied Physics Letters. 95. DOI: 10.1063/1.3274131 |
0.335 |
|
| 2009 |
Wang W, Lin AS, Phillips JD. Intermediate-band photovoltaic solar cell based on ZnTe:O Applied Physics Letters. 95: 11103. DOI: 10.1063/1.3166863 |
0.355 |
|
| 2009 |
Lin AS, Wang W, Phillips JD. Model for intermediate band solar cells incorporating carrier transport and recombination Journal of Applied Physics. 105: 64512. DOI: 10.1063/1.3093962 |
0.36 |
|
| 2009 |
Wang W, Bowen W, Spanninga S, Lin S, Phillips J. Optical characteristics of ZnTeO thin films synthesized by pulsed laser deposition and molecular beam epitaxy Journal of Electronic Materials. 38: 119-125. DOI: 10.1007/S11664-008-0577-2 |
0.352 |
|
| 2008 |
Cagin E, Yang J, Wang W, Phillips JD, Hong SK, Lee JW, Lee JY. Growth and structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy Applied Physics Letters. 92. DOI: 10.1063/1.2940305 |
0.769 |
|
| 2008 |
Wang W, Lin A, Phillips JD. Electrical Characteristics and Photoresponse of ZnO/ZnTe Heterojunction Diodes Journal of Electronic Materials. 37: 1044-1048. DOI: 10.1007/S11664-008-0484-6 |
0.438 |
|
| 2008 |
Emelie PY, Velicu S, Grein CH, Phillips JD, Wijewarnasuriya PS, Dhar NK. Modeling of LWIR HgCdTe auger-suppressed infrared photodiodes under nonequilibrium operation Journal of Electronic Materials. 37: 1362-1368. DOI: 10.1007/S11664-008-0427-2 |
0.798 |
|
| 2008 |
Bowen WE, Wang W, Cagin E, Phillips JD. Quantum confinement and carrier localization effects in ZnO/Mg x Zn 1-x O wells synthesized by pulsed laser deposition Journal of Electronic Materials. 37: 749-754. DOI: 10.1007/S11664-007-0299-X |
0.782 |
|
| 2007 |
Fu J, Zhu XA, Phillips JD, Mortazawi A. Improving Linearity of Ferroelectric-Based Microwave Tunable Circuits Ieee Transactions On Microwave Theory and Techniques. 55: 354-360. DOI: 10.1109/Tmtt.2006.889323 |
0.326 |
|
| 2007 |
Cagin E, Chen DY, Siddiqui JJ, Phillips JD. Hysteretic metal-ferroelectric-semiconductor capacitors based on PZT/ZnO heterostructures Journal of Physics D: Applied Physics. 40: 2430-2434. DOI: 10.1088/0022-3727/40/8/003 |
0.766 |
|
| 2007 |
Emelie PY, Phillips JD, Velicu S, Grein CH. Modeling and design considerations of HgCdTe infrared photodiodes under nonequilibrium operation Journal of Electronic Materials. 36: 846-851. DOI: 10.1007/S11664-007-0107-7 |
0.799 |
|
| 2007 |
Emelie PY, Cagin E, Siddiqui J, Phillips JD, Fulk C, Garland J, Sivananthan S. Electrical characteristics of PEDOT:PSS Organic contacts to HgCdTe Journal of Electronic Materials. 36: 841-845. DOI: 10.1007/S11664-007-0106-8 |
0.766 |
|
| 2006 |
Chen DY, Phillips JD. Analysis and design optimization of electrooptic interferometric modulators for microphotonics applications Journal of Lightwave Technology. 24: 2340-2345. DOI: 10.1109/Jlt.2006.874603 |
0.546 |
|
| 2006 |
Moazzami K, Murphy TE, Phillips JD, Cheung MCK, Cartwright AN. Sub-bandgap photoconductivity in ZnO epilayers and extraction of trap density spectra Semiconductor Science and Technology. 21: 717-723. DOI: 10.1088/0268-1242/21/6/001 |
0.716 |
|
| 2006 |
Siddiqui J, Cagin E, Chen D, Phillips JD. ZnO thin-film transistors with polycrystalline (Ba,Sr) Ti O 3 gate insulators Applied Physics Letters. 88. DOI: 10.1063/1.2204574 |
0.786 |
|
| 2006 |
Murphy TE, Moazzami K, Phillips JD. Trap-related photoconductivity in ZnO epilayers Journal of Electronic Materials. 35: 543-549. DOI: 10.1007/S11664-006-0097-X |
0.695 |
|
| 2006 |
Emelie PY, Phillips JD, Buller B, Venkateswaean UD. Free carrier absorption and lattice vibrational modes in bulk ZnO Journal of Electronic Materials. 35: 525-529. DOI: 10.1007/S11664-006-0094-0 |
0.785 |
|
| 2006 |
Chen DY, Phillips JD. Electric field dependence of piezoelectric coefficient in ferroelectric thin films Journal of Electroceramics. 17: 613-617. DOI: 10.1007/S10832-006-9335-0 |
0.551 |
|
| 2005 |
Chen DY, Phillips JD. Hysteretic electro-optic response in ferroelectric thin films Proceedings of Spie - the International Society For Optical Engineering. 5867: 1-7. DOI: 10.1117/12.613013 |
0.561 |
|
| 2005 |
Chen DY, Phillips JD. Extraction of electro-optic coefficient in thin-film linear electro-optic Mach-Zehnder interferometers with nonperiodic intensity-voltage output characteristics Optical Engineering. 44: 1-6. DOI: 10.1117/1.1872032 |
0.561 |
|
| 2005 |
Murphy TE, Chen DY, Cagin E, Phillips JD. Electronic properties of ZnO epilayers grown on c-plane sapphire by plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1277-1280. DOI: 10.1116/1.1868714 |
0.788 |
|
| 2005 |
Murphy TE, Blaszczak JO, Moazzami K, Bowen WE, Phillips JD. Properties of electrical contacts on bulk and epitaxial n-type ZnO Journal of Electronic Materials. 34: 389-394. DOI: 10.1007/S11664-005-0116-3 |
0.388 |
|
| 2005 |
Moazzami K, Phillips J, Lee D, Krishnamurthy S, Benoit G, Fink Y, Tiwald T. Detailed study of above bandgap optical absorption in HgCdTe Journal of Electronic Materials. 34: 773-778. DOI: 10.1007/S11664-005-0019-3 |
0.346 |
|
| 2005 |
Murphy TE, Chen DY, Phillips JD. Growth and electronic properties of ZnO epilayers by plasma-assisted molecular beam epitaxy Journal of Electronic Materials. 34: 699-703. DOI: 10.1007/S11664-005-0006-8 |
0.608 |
|
| 2004 |
Chen D, Murphy TE, Chakrabarti S, Phillips JD. Optical waveguiding in BaTiO 3/MgO/Al xO y/GaAs heterostructures Applied Physics Letters. 85: 5206-5208. DOI: 10.1063/1.1828212 |
0.573 |
|
| 2004 |
Murphy TE, Chen D, Phillips JD. Electronic properties of ferroelectric BaTiO 3/MgO capacitors on GaAs Applied Physics Letters. 85: 3208-3210. DOI: 10.1063/1.1804237 |
0.624 |
|
| 2004 |
Chakrabarti S, Fathpour S, Moazzami K, Phillips J, Lei Y, Browning N, Bhattacharya P. Pulsed laser annealing of self-organized InAs/GaAs quantum dots Journal of Electronic Materials. 33: L5-L8. DOI: 10.1007/S11664-004-0147-1 |
0.64 |
|
| 2004 |
Moazzami K, Phillips J, Lee D, Edwall D, Carmody M, Piquette E, Zandian M, Arias J. Optical-absorption model for molecular-beam epitaxy HgCdTe and application to infrared detector photoresponse Journal of Electronic Materials. 33: 701-708. DOI: 10.1007/S11664-004-0069-Y |
0.356 |
|
| 2004 |
Moazzami K, Phillips J, Lee D, Edwall D, Carmody M, Piquette E, Zandian M, Arias J. Optical absorption studies of HgCdTe epitaxial layers for improved infrared detector modeling Physica Status Solidi (C). 1: 662-665. DOI: 10.1002/Pssc.200304161 |
0.337 |
|
| 2003 |
Chen D, Murphy TE, Phillips JD. Deposition Of BaTiO 3 Thin Films And MgO Buffer Layers On Patterned GaAs Substrates For Integrated Optics Applications Mrs Proceedings. 784. DOI: 10.1557/Proc-784-C11.23 |
0.551 |
|
| 2003 |
Kochman B, Stiff-Roberts A, Chakrabarti S, Phillips J, Krishna S, Singh J, Bhattacharya P. Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors Ieee Journal of Quantum Electronics. 39: 459-467. DOI: 10.1109/Jqe.2002.808169 |
0.799 |
|
| 2003 |
Phillips JD, Moazzami K, Kim J, Edwall DD, Lee DL, Arias JM. Uniformity of optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy Applied Physics Letters. 83: 3701-3703. DOI: 10.1063/1.1625776 |
0.689 |
|
| 2003 |
Carmody M, Lee D, Zandian M, Phillips J, Arias J. Threading and misfit-dislocation motion in molecular-beam epitaxy-grown HgCdTe epilayers Journal of Electronic Materials. 32: 710-716. DOI: 10.1007/S11664-003-0057-7 |
0.343 |
|
| 2003 |
Moazzami K, Liao D, Phillips JD, Lee DL, Carmody M, Zandian M, Edwall DD. Optical absorption properties of HgCdTe epilayers with uniform composition Journal of Electronic Materials. 32: 646-650. DOI: 10.1007/S11664-003-0046-X |
0.347 |
|
| 2002 |
Krishna S, Stiff-Roberts AD, Phillips JD, Bhattacharya P, Kennerly SW. Hot dot detectors Ieee Circuits and Devices Magazine. 18: 14-24. DOI: 10.1109/Mcd.2002.981296 |
0.748 |
|
| 2002 |
Shin B, Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots Applied Physics Letters. 81: 1423-1425. DOI: 10.1063/1.1501760 |
0.324 |
|
| 2002 |
Kim K, Urayama J, Norris TB, Singh J, Phillips J, Bhattacharya P. Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots Applied Physics Letters. 81: 670-672. DOI: 10.1063/1.1493665 |
0.363 |
|
| 2002 |
Phillips J. Evaluation of the fundamental properties of quantum dot infrared detectors Journal of Applied Physics. 91: 4590-4594. DOI: 10.1063/1.1455130 |
0.355 |
|
| 2002 |
Wijewarnasuriya PS, Zandian M, Phillips J, Edwall D, Dewames RE, Hildebrandt G, Bajaj J, Arias JM, D'Souza AI, Moore F. Advances in large-area Hg 1-x Cd x Te photovoltaic detectors for remote-sensing applications Journal of Electronic Materials. 31: 726-731. DOI: 10.1007/S11664-002-0227-Z |
0.4 |
|
| 2002 |
Phillips JD, Edwall DD, Lee DL. Control of very-long-wavelength infrared HgCdTe detector-cutoff wavelength Journal of Electronic Materials. 31: 664-668. DOI: 10.1007/S11664-002-0216-2 |
0.324 |
|
| 2001 |
Phillips J, Edwall D, Lee D, Arias J. Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements Journal of Vacuum Science & Technology B. 19: 1580-1584. DOI: 10.1116/1.1374621 |
0.314 |
|
| 2001 |
Bhattacharya P, Krishna S, Phillips J, McCann PJ, Namjou K. Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors Journal of Crystal Growth. 227: 27-35. DOI: 10.1016/S0022-0248(01)00627-3 |
0.661 |
|
| 2000 |
Bhatiacharya P, Krishna S, Zhu D, Phillips J, Klotzkin D, Qasaimeh O, Zhou WD, Singh J, Mccann PJ, Namjou K. Optoelectronic Device Applications of Self-Organized In(Ga,Al)As/Ga(Al)As Quantum Dots Mrs Proceedings. 618. DOI: 10.1557/Proc-618-195 |
0.747 |
|
| 2000 |
Biefeld RM, Phillips JD. Growth of InSb on GaAs substrates using InAlSb buffers for magnetic field sensor applications Materials Research Society Symposium - Proceedings. 607: 59-64. DOI: 10.1557/Proc-607-59 |
0.336 |
|
| 2000 |
Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Interdiffusion, segregation, and dissolution in InAs/GaAs quantum dot superlattices Surface Review and Letters. 7: 539-545. DOI: 10.1016/S0218-625X(00)00063-4 |
0.378 |
|
| 2000 |
Biefeld RM, Phillips JD, Kurtz SR. InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition Journal of Crystal Growth. 211: 400-404. DOI: 10.1016/S0022-0248(99)00822-2 |
0.382 |
|
| 2000 |
Biefeld RM, Phillips JD. Growth of InSb on GaAs Using InAlSb Buffer Layers Journal of Crystal Growth. 209: 567-571. DOI: 10.1016/S0022-0248(99)00751-4 |
0.324 |
|
| 2000 |
Biefeld RM, Kurtz SR, Phillips JD. Exploring New Active Regions for Type 1 InasSb Strained-Layer Lasers Journal of Electronic Materials. 29: 91-93. DOI: 10.1007/S11664-000-0101-9 |
0.368 |
|
| 1999 |
Klotzkin D, Phillips J, Jiang H, Singh J, Bhattacharya P. Electron intersubband energy level spacing in self-organized In0.4Ga0.6As/GaAs quantum dot lasers from temperature-dependent modulation measurements Journal of Vacuum Science & Technology B. 17: 1276-1280. DOI: 10.1116/1.590739 |
0.393 |
|
| 1999 |
Linder KK, Phillips J, Qasaimeh O, Liu XF, Krishna S, Bhattacharya P. Growth and electroluminescent properties of self-organized In[sub 0.4]Ga[sub 0.6]As/GaAs quantum dots grown on silicon Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1116. DOI: 10.1116/1.590704 |
0.736 |
|
| 1999 |
Phillips J, Bhattacharya P, Kennerly SW, Beekman DW, Dutta M. Self-assembled InAs-GaAs quantum-dot intersubband detectors Ieee Journal of Quantum Electronics. 35: 936-943. DOI: 10.1109/3.766837 |
0.384 |
|
| 1999 |
Phillips J, Kamath K, Bhattacharya P, Venkateswaran U. Temperature-dependent photoluminescence of In0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dots Journal of Applied Physics. 85: 2997-2999. DOI: 10.1063/1.369618 |
0.338 |
|
| 1999 |
Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots Applied Physics Letters. 75: 2797-2799. DOI: 10.1063/1.125153 |
0.354 |
|
| 1999 |
Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots Applied Physics Letters. 74: 2824-2826. DOI: 10.1063/1.124026 |
0.346 |
|
| 1999 |
Qasaimeh O, Zhou W, Phillips J, Krishna S, Bhattacharya P, Dutta M. Bistability and self-pulsation in quantum-dot lasers with intracavity quantum-dot saturable absorbers Applied Physics Letters. 74: 1654-1656. DOI: 10.1063/1.123644 |
0.723 |
|
| 1999 |
Phillips J, Bhattacharya P, Venkateswaran U. Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum dots Applied Physics Letters. 74: 1549-1551. DOI: 10.1063/1.123612 |
0.328 |
|
| 1999 |
Linder KK, Phillips J, Qasaimeh O, Liu XF, Krishna S, Bhattacharya P, Jiang JC. Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates Applied Physics Letters. 74: 1355-1357. DOI: 10.1063/1.123548 |
0.736 |
|
| 1999 |
Zhou W, Qasaimeh O, Phillips J, Krishna S, Bhattacharya P. Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers Applied Physics Letters. 74: 783-785. DOI: 10.1063/1.123366 |
0.785 |
|
| 1999 |
Linder KK, Phillips J, Qasaimeh O, Bhattacharya P, Jiang JC. In(Ga)As/GaAs self-organized quantum dot light emitters grown on silicon substrates Journal of Crystal Growth. 201202: 1186-1189. DOI: 10.1016/S0022-0248(99)00024-X |
0.701 |
|
| 1999 |
Bhattacharya P, Kamath K, Phillips J, Klotzkin D. Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications Bulletin of Materials Science. 22: 519-529. DOI: 10.1007/Bf02749964 |
0.388 |
|
| 1999 |
Phillips JD, Bhattacharya PK, Venkateswaran UD. Photoluminescence Studies on Self-Organized InAlAs/AlGaAs Quantum Dots under Pressure Physica Status Solidi B-Basic Solid State Physics. 211: 85-89. DOI: 10.1002/(Sici)1521-3951(199901)211:1<85::Aid-Pssb85>3.0.Co;2-0 |
0.352 |
|
| 1998 |
Bhattacharya P, Zhang X, Kamath KK, Klotzkin D, Phillips JD, Caneau C, Bhat RJ. High-speed quantum well and quantum dot lasers Proceedings of Spie. 3547: 350-360. DOI: 10.1117/12.319650 |
0.553 |
|
| 1998 |
Phillips J, Kamath K, Zhou X, Chervela N, Bhattacharya P. Intersubband absorption and photoluminescence in Si-doped self-organized InAs/Ga(Al)As quantum dots Journal of Vacuum Science & Technology B. 16: 1343-1346. DOI: 10.1116/1.590072 |
0.408 |
|
| 1998 |
Phillips J, Kamath K, Brock T, Bhattacharya P. Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors Applied Physics Letters. 72: 3509-3511. DOI: 10.1063/1.121643 |
0.391 |
|
| 1998 |
Phillips J, Kamath K, Bhattacharya P. Far-infrared photoconductivity in self-organized InAs quantum dots Applied Physics Letters. 72: 2020-2022. DOI: 10.1063/1.121252 |
0.395 |
|
| 1998 |
Qasaimeh O, Kamath K, Bhattacharya P, Phillips J. Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots Applied Physics Letters. 72: 1275-1277. DOI: 10.1063/1.121049 |
0.69 |
|
| 1997 |
Phillips J, Kamath K, Zhou X, Chervela N, Bhattacharya P. Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots Applied Physics Letters. 71: 2079-2081. DOI: 10.1063/1.119347 |
0.399 |
|
| 1997 |
Kamath K, Phillips J, Jiang H, Singh J, Bhattacharya P. Small-Signal Modulation And Differential Gain Of Single-Mode Self-Organized In0.4Ga0.6As/Gaas Quantum Dot Lasers Applied Physics Letters. 70: 2952-2953. DOI: 10.1063/1.118754 |
0.372 |
|
| 1997 |
Kamath K, Bhattacharya P, Phillips J. Room temperature luminescence from self-organized quantum dots with high size uniformity Journal of Crystal Growth. 720-724. DOI: 10.1016/S0022-0248(96)00815-9 |
0.376 |
|
| 1996 |
Kamath K, Phillips J, Singh J, Bhattacharya P. Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls Journal of Vacuum Science & Technology B. 14: 2312-2314. DOI: 10.1116/1.588928 |
0.365 |
|
| 1996 |
Phillips J, Kamath K, Singh J, Bhattacharya P. Adatom migration effects during molecular beam epitaxial growth of InGaAs/GaAs quantum wells on patterned substrates with vertical sidewalls: Blue shift in luminescence spectra Applied Physics Letters. 68: 1120-1122. DOI: 10.1063/1.115732 |
0.376 |
|
| 1996 |
Kamath K, Bhattacharya P, Sosnowski T, Norris T, Phillips J. Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers Electronics Letters. 32: 1374-1375. DOI: 10.1049/El:19960921 |
0.392 |
|
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