☰

Theodore D. Moustakas - Publications

Affiliations: 
Materials Science and Engineering Boston University, Boston, MA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Condensed Matter Physics
Website:
http://people.bu.edu/tdm/
Tree Info Similar researchers PubMed Report error

243 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Stagarescu CB, Duda L, Smith KE, Guo JH, Nordgren J, Singh R, Moustakas TD. Electronic structure of GaN measured using soft-x-ray emission and absorption. Physical Review. B, Condensed Matter. 54: R17335-R17338. PMID 9985951 DOI: 10.1103/Physrevb.54.R17335  0.369
2018 Dimitrakopulos GP, Vasileiadis IG, Bazioti C, Smalc-Koziorowska J, Kret S, Dimakis E, Florini N, Kehagias T, Suski T, Karakostas T, Moustakas TD, Komninou P. Compositional and strain analysis of In(Ga)N/GaN short period superlattices Journal of Applied Physics. 123: 24304. DOI: 10.1063/1.5009060  0.386
2017 Jovic V, Moser S, Ulstrup S, Goodacre D, Dimakis E, Koch RJ, Katsoukis G, Moreschini L, Mo SK, Jozwiak C, Bostwick A, Rotenberg E, Moustakas T, Smith KE. How Indium Nitride Senses Water. Nano Letters. PMID 29111764 DOI: 10.1021/Acs.Nanolett.7B02985  0.33
2017 Moustakas TD, Paiella R. Optoelectronic Device Physics and Technology of Nitride Semiconductors from the UV to the Terahertz: a review. Reports On Progress in Physics. Physical Society (Great Britain). PMID 28649961 DOI: 10.1088/1361-6633/Aa7Bb2  0.387
2017 Brummer G, Nothern D, Moustakas TD. Structural and Optical Properties of Al0.30Ga0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy Mrs Advances. 2: 271-276. DOI: 10.1557/Adv.2016.627  0.434
2017 Sun H, Yin J, Pecora EF, Negro LD, Paiella R, Moustakas TD. Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates Ieee Photonics Journal. 9: 1-9. DOI: 10.1109/Jphot.2017.2716420  0.444
2017 Woodward JM, Nikiforov AY, Ludwig KF, Moustakas TD. Analysis of InGaN nanodots grown by droplet heteroepitaxy using grazing incidence small-angle X-ray scattering and electron microscopy Journal of Applied Physics. 122: 065305. DOI: 10.1063/1.4986272  0.372
2017 Ziade E, Yang J, Brummer G, Nothern D, Moustakas T, Schmidt AJ. Thickness dependent thermal conductivity of gallium nitride Applied Physics Letters. 110: 31903. DOI: 10.1063/1.4974321  0.377
2016 Moustakas TD. Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy Mrs Communications. 6: 247-269. DOI: 10.1557/Mrc.2016.26  0.48
2016 Sun H, Piquette A, Raukas M, Moustakas TD. Enhancement of Yellow Light Extraction Efficiency of Y 3 Al 5 O 12 :Ce 3+ Ceramic Converters Using a 2-D TiO 2 Hexagonal-Lattice Nanocylinder Photonic Crystal Layer Ieee Photonics Journal. 8: 1-10. DOI: 10.1109/Jphot.2016.2527019  0.343
2016 Durmaz H, Nothern D, Brummer G, Moustakas TD, Paiella R. Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures Applied Physics Letters. 108: 201102. DOI: 10.1063/1.4950852  0.43
2016 Song B, Sun H, Cao CK, Moustakas TD. Growth mode of nitride semiconductors on nano-patterned sapphire substrates by molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. DOI: 10.1002/Pssc.201510212  0.416
2015 Pecora EF, Sun H, Negro LD, Moustakas TD. Deep-UV optical gain in AlGaN-based graded-index separate confinement heterostructure Optical Materials Express. 5: 809-817. DOI: 10.1364/Ome.5.000809  0.447
2015 Ziade E, Yang J, Brummer G, Nothern D, Moustakas T, Schmidt AJ. Thermal transport through GaN–SiC interfaces from 300 to 600 K Applied Physics Letters. 107: 91605. DOI: 10.1063/1.4930104  0.318
2015 Brummer G, Nothern D, Nikiforov AY, Moustakas TD. Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys Applied Physics Letters. 106: 221107. DOI: 10.1063/1.4922215  0.376
2015 Colakerol L, Piper LFJ, Fedorov A, Chen T, Moustakas TD, Smith KE. Potassium and ion beam induced electron accumulation in InN Surface Science. 632: 154-157. DOI: 10.1016/J.Susc.2014.10.004  0.514
2015 Sun H, Pecora EF, Woodward J, Smith DJ, Dal Negro L, Moustakas TD. Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH) Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532807  0.428
2014 Sun H, Moustakas TD. UV emitters based on an AlGaN p–n junction in the form of graded-index separate confinement heterostructure Applied Physics Express. 7: 12104. DOI: 10.7567/Apex.7.012104  0.415
2014 Pan W, Dimakis E, Wang GT, Moustakas TD, Tsui DC. Two-dimensional electron gas in monolayer InN quantum wells Applied Physics Letters. 105. DOI: 10.1063/1.4902916  0.407
2014 Moldawer A, Bhattacharyya A, Zhou L, Smith DJ, Moustakas TD. Characterization of a-plane GaN templates grown by HVPE and high efficiency deep UV emitting AlGaN/AlN MQWs grown by MBE on such templates Physica Status Solidi (C). 11: 585-589. DOI: 10.1002/Pssc.201300685  0.828
2014 Gorczyca I, Suski T, Staszczak G, Wang XQ, Christensen NE, Svane A, Dimakis E, Moustakas TD. Short period polar and nonpolar m InN/n GaN superlattices Physica Status Solidi (C). 11: 678-681. DOI: 10.1002/Pssc.201300424  0.361
2013 Gorczyca I, Suski T, Staszczak G, Christensen NE, Svane A, Wang X, Dimakis E, Moustakas T. InN/GaN Superlattices: Band Structures and Their Pressure Dependence Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jl06  0.416
2013 Suski T, Gorczyca I, Staszczak G, Wang XQ, Christensen NE, Svane A, Dimakis E, Moustakas TD. Short period InN/nGaN superlattices: experiment versus theory Proceedings of Spie. 8625. DOI: 10.1117/12.2004313  0.336
2013 Sun H, Woodward J, Yin J, Moldawer A, Pecora EF, Nikiforov AY, Dal Negro L, Paiella R, Ludwig K, Smith DJ, Moustakas TD. Development of AlGaN-based graded-index-separate-confinement- heterostructure deep UV emitters by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4796107  0.836
2013 Zhou L, Dimakis E, Hathwar R, Aoki T, Smith DJ, Moustakas TD, Goodnick SM, McCartney MR. Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.125310  0.46
2013 DiMaria J, Dimakis E, Moustakas TD, Paiella R. Plasmonic off-axis unidirectional beaming of quantum-well luminescence Applied Physics Letters. 103: 251108. DOI: 10.1063/1.4851938  0.395
2013 Francesco Pecora E, Zhang W, Nikiforov AY, Yin J, Paiella R, Dal Negro L, Moustakas TD. Sub-250 nm light emission and optical gain in AlGaN materials Journal of Applied Physics. 113: 013106. DOI: 10.1063/1.4772615  0.423
2013 Moustakas TD. The role of extended defects on the performance of optoelectronic devices in nitride semiconductors Physica Status Solidi (a). 210: 169-174. DOI: 10.1002/Pssa.201200561  0.355
2012 Henson J, DiMaria J, Dimakis E, Moustakas TD, Paiella R. Plasmon-enhanced light emission based on lattice resonances of silver nanocylinder arrays. Optics Letters. 37: 79-81. PMID 22212797 DOI: 10.1364/Ol.37.000079  0.375
2012 Pecora EF, Zhang W, Yin J, Paiella R, Dal Negro L, Moustakas TD. Polarization Properties of Deep-Ultraviolet Optical Gain in Al-Rich AlGaN Structures Applied Physics Express. 5: 032103. DOI: 10.1143/Apex.5.032103  0.352
2012 Moustakas TD, Liao Y, Kao CK, Thomidis C, Bhattacharyya A, Bhattarai D, Moldawer A. Deep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations Proceedings of Spie - the International Society For Optical Engineering. 8278. DOI: 10.1117/12.916213  0.818
2012 Zhang W, Nikiforov AY, Thomidis C, Woodward J, Sun H, Kao CK, Bhattarai D, Moldawer A, Zhou L, Smith DJ, Moustakas TD. Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3678208  0.835
2012 Schneck JR, Dimakis E, Woodward J, Erramilli S, Moustakas TD, Ziegler LD. Temperature dependent photon echoes of a GaN thin film Applied Physics Letters. 101. DOI: 10.1063/1.4754091  0.371
2012 Sudradjat FF, Zhang W, Woodward J, Durmaz H, Moustakas TD, Paiella R. Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells Applied Physics Letters. 100: 241113. DOI: 10.1063/1.4729470  0.425
2012 Francesco Pecora E, Zhang W, Yu. Nikiforov A, Zhou L, Smith DJ, Yin J, Paiella R, Dal Negro L, Moustakas TD. Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations Applied Physics Letters. 100: 061111. DOI: 10.1063/1.3681944  0.453
2012 Liao Y, Thomidis C, Kao CK, Moustakas TD. Publishers note: AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy (Applied Physics Letters (2011) 98 (081110)) Applied Physics Letters. 100. DOI: 10.1063/1.3675971  0.741
2012 Liao Y, Kao CK, Thomidis C, Moldawer A, Woodward J, Bhattarai D, Moustakas TD. Recent progress of efficient deep UV-LEDs by plasma-assisted molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 798-801. DOI: 10.1002/Pssc.201100438  0.823
2012 Kao CK, Bhattacharyya A, Thomidis C, Moldawer A, Paiella R, Moustakas TD. A comparative study of UV electro-absorption modulators based on bulk III-nitride films and multiple quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 770-773. DOI: 10.1002/Pssc.201100437  0.82
2012 Sudradjat FF, Zhang W, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Sequential tunneling transport in GaN/AlGaN quantum cascade structures Physica Status Solidi (C). 9: 588-591. DOI: 10.1002/Pssc.201100423  0.692
2011 Henson J, DiMaria J, Dimakis E, Li R, Minissale S, Dal Negro L, Moustakas TD, Paiella R. Plasmon-Enhanced Emission Rates from III-Nitride Quantum Wells Using Tunable Surface Plasmons Mrs Proceedings. 1294. DOI: 10.1557/Opl.2011.179  0.421
2011 Smith DJ, Zhou L, Moustakas TD. Structural characterization of III-nitride materials and devices Proceedings of Spie. 7945. DOI: 10.1117/12.877470  0.433
2011 Zhou L, Smith DJ, McCartney MR, Xu T, Moustakas TD. Measurement of electric field across individual wurtzite GaN quantum dots using electron holography Applied Physics Letters. 99: 101905. DOI: 10.1063/1.3636109  0.428
2011 Kao CK, Bhattacharyya A, Thomidis C, Paiella R, Moustakas TD. Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells Journal of Applied Physics. 109. DOI: 10.1063/1.3567921  0.752
2011 Liao Y, Thomidis C, Kao CK, Moustakas TD. AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy Applied Physics Letters. 98. DOI: 10.1063/1.3559842  0.763
2011 Katsikini M, Pinakidou F, Arvanitidis J, Paloura EC, Ves S, Komninou P, Bougrioua Z, Iliopoulos E, Moustakas TD. Comparison of Fe and Si doping of GaN: An EXAFS and Raman study Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 176: 723-726. DOI: 10.1016/J.Mseb.2011.02.028  0.657
2011 Moustakas TD, Bhattacharyya A. The role of liquid phase epitaxy during growth of AlGaN by MBE Physica Status Solidi (C). 9: 580-583. DOI: 10.1002/Pssc.201100427  0.589
2010 Henson J, Dimakis E, DiMaria J, Li R, Minissale S, Dal Negro L, Moustakas TD, Paiella R. Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays. Optics Express. 18: 21322-9. PMID 20941028 DOI: 10.1364/Oe.18.021322  0.376
2010 Paiella R, Driscoll K, Li Y, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD. Intersubband transitions in GaN-based quantum wells: a new materials platform for infrared device applications Proceedings of Spie. 7808: 780807. DOI: 10.1117/12.861479  0.703
2010 Sudradjat F, Zhang W, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures Journal of Applied Physics. 108: 103704. DOI: 10.1063/1.3511334  0.683
2010 Chandrasekaran R, Moustakas TD, Ozcan AS, Ludwig KF, Zhou L, Smith DJ. Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates Journal of Applied Physics. 108. DOI: 10.1063/1.3475521  0.647
2010 Pookpanratana S, France R, Blum M, Bell A, Bär M, Weinhardt L, Zhang Y, Hofmann T, Fuchs O, Yang W, Denlinger JD, Mulcahy S, Moustakas TD, Heske C. Chemical structure of vanadium-based contact formation on n-AlN Journal of Applied Physics. 108. DOI: 10.1063/1.3456060  0.324
2010 Liao Y, Thomidis C, Kao C, Moldawer A, Zhang W, Chang Y, Nikiforov AY, Bellotti E, Moustakas TD. Milliwatt power AlGaN‐based deep ultraviolet light emitting diodes by plasma‐assisted molecular beam epitaxy Physica Status Solidi-Rapid Research Letters. 4: 49-51. DOI: 10.1002/Pssr.200903400  0.816
2010 Driscoll K, Liao Y, Bhattacharyya A, Moustakas TD, Paiella R, Zhou L, Smith DJ. Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications Physica Status Solidi (C). 7: 2394-2397. DOI: 10.1002/Pssc.200983905  0.684
2009 Paiella R, Driscoll K, Liao Y, Bhattacharyya A, Zhou L, Smith DJ, Moustakas TD. Short-Wavelength Intersubband Light Emission from Optically Pumped GaN/AlN Quantum Wells Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I10-08  0.694
2009 Liao Y, Thomidis C, Bhattacharyya A, Kao C, Moldawer A, Zhang W, Moustakas TD. Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I10-01  0.821
2009 Sudradjat F, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Experimental Observation of Sequential Tunneling Transport in GaN/AlGaN Coupled Quantum Wells Grown on a Free-Standing GaN Substrate Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I09-20  0.707
2009 Henson J, Heckel JC, Dimakis E, Abell J, Chumanov G, Moustakas TD, Paiella R. Plasmon-enhanced light emission from InGaN quantum wells using chemically synthesized silver nanoparticles Optics Infobase Conference Papers. DOI: 10.1364/Fio.2009.Fmh4  0.37
2009 Henson J, Heckel JC, Dimakis E, Abell J, Bhattacharyya A, Chumanov G, Moustakas TD, Paiella R. Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles Applied Physics Letters. 95. DOI: 10.1063/1.3249579  0.546
2009 Bellotti E, Driscoll K, Moustakas TD, Paiella R. Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors Journal of Applied Physics. 105: 113103. DOI: 10.1063/1.3137203  0.396
2009 Bhattacharyya A, Moustakas TD, Zhou L, Smith DJ, Hug W. Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency Applied Physics Letters. 94: 181907. DOI: 10.1063/1.3130755  0.627
2009 Driscoll K, Liao Y, Bhattacharyya A, Zhou L, Smith DJ, Moustakas TD, Paiella R. Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells Applied Physics Letters. 94: 081120. DOI: 10.1063/1.3089840  0.671
2009 Nargelas S, Malinauskas T, Kadys A, Dimakis E, Moustakas TD, Jarašiuūnas K. Nonlinear carrier recombination and transport features in highly excited InN layer Physica Status Solidi (C). 6. DOI: 10.1002/Pssc.200880846  0.344
2008 Henson J, Bhattacharyya A, Moustakas TD, Paiella R. Controlling the recombination rate of semiconductor active layers via coupling to dispersion-engineered surface plasmons Journal of the Optical Society of America B. 25: 1328. DOI: 10.1364/Josab.25.001328  0.574
2008 Colakerol L, Piper LFJ, Fedorov A, Chen TC, Moustakas TD, Smith KE. Observation of an inverted band structure near the surface of InN Epl. 83: 47003. DOI: 10.1209/0295-5075/83/47003  0.364
2008 Li Y, Bhattacharyya A, Thomidis C, Liao Y, Moustakas TD, Paiella R. Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides Journal of Applied Physics. 104: 083101. DOI: 10.1063/1.2996107  0.671
2008 Bellotti E, Driscoll K, Moustakas TD, Paiella R. Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures Applied Physics Letters. 92: 101112. DOI: 10.1063/1.2894508  0.418
2008 Abell J, Moustakas TD. The role of dislocations as nonradiative recombination centers in InGaN quantum wells Applied Physics Letters. 92: 91901. DOI: 10.1063/1.2889444  0.412
2008 Zhou L, Dimakis E, Moustakas TD, Smith D. Microstructural Characterization of InN/GaN Multiple Quantum Wells Microscopy and Microanalysis. 14: 256-257. DOI: 10.1017/S143192760808481X  0.389
2008 Zhou L, Chandrasekaran R, Moustakas TD, Smith DJ. Structural characterization of non-polar (1 1 2 0) and semi-polar (1 1 2 6) GaN films grown on r-plane sapphire Journal of Crystal Growth. 310: 2981-2986. DOI: 10.1016/J.Jcrysgro.2008.03.013  0.66
2008 Thomidis C, Nikiforov AY, Xu T, Moustakas TD. InGaN‐based LEDs grown by plasma‐assisted MBE on (0001) sapphire with GaN QDs in the nucleation layer Physica Status Solidi (C). 5: 2309-2311. DOI: 10.1002/Pssc.200778728  0.414
2008 Moustakas TD, Xu T, Thomidis C, Nikiforov AY, Zhou L, Smith DJ. Growth of III‐nitride quantum dots and their applications to blue‐green LEDs Physica Status Solidi (a). 205: 2560-2565. DOI: 10.1002/Pssa.200880222  0.437
2008 Dimakis E, Nikiforov AY, Thomidis C, Zhou L, Smith DJ, Abell J, Kao CK, Moustakas TD. Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells Physica Status Solidi (a) Applications and Materials Science. 205: 1070-1073. DOI: 10.1002/Pssa.200778742  0.524
2007 Li Y, Bhattacharyya A, Thomidis C, Moustakas TD, Paiella R. Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides. Optics Express. 15: 17922-7. PMID 19551087 DOI: 10.1364/Oe.15.017922  0.538
2007 Li Y, Bhattacharyya A, Thomidis C, Moustakas TD, Paiella R. Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells. Optics Express. 15: 5860-5. PMID 19532844 DOI: 10.1364/Oe.15.005860  0.573
2007 Piper LFJ, Colakerol L, Learmonth T, Glans P, Smith KE, Fuchs F, Furthmüller J, Bechstedt F, Chen T, Moustakas TD, Guo J-. Electronic structure of InN studied using soft-x-ray emission, soft x-ray absorption, and quasiparticle band structure calculations Physical Review B. 76: 245204. DOI: 10.1103/Physrevb.76.245204  0.517
2007 Driscoll K, Bhattacharyya A, Moustakas TD, Paiella R, Zhou L, Smith DJ. Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells Applied Physics Letters. 91: 141104. DOI: 10.1063/1.2794013  0.598
2007 Xu T, Zhou L, Wang Y, Özcan AS, Ludwig KF, Smith DJ, Moustakas TD. GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature Journal of Applied Physics. 102: 073517. DOI: 10.1063/1.2787155  0.455
2007 Wang Y, Özcan AS, Sanborn C, Ludwig KF, Bhattacharyya A, Chandrasekaran R, Moustakas TD, Zhou L, Smith DJ. Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy Journal of Applied Physics. 102: 073522. DOI: 10.1063/1.2786578  0.701
2007 Riyopoulos S, Moustakas TD, Cabalu JS. Enhanced transmission through quasirandom nanostructured dielectric interfaces via supercritical angle scattering Journal of Applied Physics. 102. DOI: 10.1063/1.2753578  0.76
2007 Riyopoulos S, Moustakas TD, Cabalu JS. Plasma nanosheath formation with carrier accumulation and enhanced localized spontaneous emission at "quantum wedges" in textured GaN Physics of Plasmas. 14. DOI: 10.1063/1.2731370  0.797
2007 Basu S, Barsoum MW, Williams AD, Moustakas TD. Spherical nanoindentation and deformation mechanisms in freestanding GaN films Journal of Applied Physics. 101. DOI: 10.1063/1.2719016  0.317
2007 Xu T, Chen P, Chandrasekaran R, Moustakas TD. Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition Applied Physics Letters. 90: 62115. DOI: 10.1063/1.2458399  0.43
2007 Williams AD, Moustakas TD. Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphire Journal of Crystal Growth. 300: 37-41. DOI: 10.1016/J.Jcrysgro.2006.10.224  0.445
2007 Chandrasekaran R, Ozcan AS, Deniz D, Ludwig KF, Moustakas TD. Growth of non-polar (1120) and semi-polar (1126) AlN and GaN films on the R-plane sapphire Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1689-1693. DOI: 10.1002/Pssc.200674288  0.633
2007 Xu T, Nikiforov AY, Thomidis C, Williams A, Moustakas TD. Blue–green–red LEDs based on InGaN quantum dots grown by plasma‐assisted molecular beam epitaxy Physica Status Solidi (a). 204: 2098-2102. DOI: 10.1002/Pssa.200674834  0.482
2006 Colakerol L, Veal TD, Jeong HK, Plucinski L, DeMasi A, Learmonth T, Glans PA, Wang S, Zhang Y, Piper LF, Jefferson PH, Fedorov A, Chen TC, Moustakas TD, McConville CF, et al. Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy. Physical Review Letters. 97: 237601. PMID 17280245 DOI: 10.1103/Physrevlett.97.237601  0.351
2006 Xu T, Nikiforov AY, Thomidis C, Williams A, Moustakas TD, Zhou L, Smith DJ. Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering Mrs Proceedings. 955: 56-60. DOI: 10.1557/Proc-0955-I05-05  0.377
2006 Chandrasekaran R, Bhattacharyya A, France R, Thomidis C, Williams A, Moustakas T. Ultraviolet light emitting diodes using non-polar A-plane AlGaN multiple quantum wells Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I04-08  0.742
2006 Wang Y, Özcan AS, Özaydin G, Ludwig KF, Bhattacharyya A, Moustakas TD, Zhou H, Headrick RL, Siddons DP. Real-time synchrotron x-ray studies of low- and high-temperature nitridation ofc-plane sapphire Physical Review B. 74. DOI: 10.1103/Physrevb.74.235304  0.563
2006 Cabalu JS, Bhattacharyya A, Thomidis C, Friel I, Moustakas TD, Collins CJ, Komninou P. High power ultraviolet light emitting diodes based on GaNAlGaN quantum wells produced by molecular beam epitaxy Journal of Applied Physics. 100. DOI: 10.1063/1.2388127  0.833
2006 Özcan AS, Wang Y, Ozaydin G, Ludwig KF, Bhattacharyya A, Moustakas TD, Siddons DP. Real-time x-ray studies of gallium adsorption and desorption Journal of Applied Physics. 100: 084307. DOI: 10.1063/1.2358307  0.526
2006 Zhou L, Xu T, Smith DJ, Moustakas TD. Microstructure of relaxed InN quantum dots grown on GaN buffer layers by molecular-beam epitaxy Applied Physics Letters. 88: 231906. DOI: 10.1063/1.2205166  0.467
2006 Wang Y, Özcan AS, Ludwig KF, Bhattacharyya A, Moustakas TD, Zhou L, Smith DJ. Complex and incommensurate ordering in Al0.72Ga0.28N thin films grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 88: 181915. DOI: 10.1063/1.2201898  0.6
2006 Cabalu JS, Thomidis C, Moustakas TD, Riyopoulos S, Zhou L, Smith DJ. Enhanced internal quantum efficiency and light extraction efficiency from textured GaNAlGaN quantum wells grown by molecular beam epitaxy Journal of Applied Physics. 99. DOI: 10.1063/1.2179120  0.826
2006 Plucinski L, Colakerol L, Bernardis S, Zhang Y, Wang S, O'Donnell C, Smith KE, Friel I, Moustakas TD. Photoemission study of sulfur and oxygen adsorption on GaN(0001̄) Surface Science. 600: 116-123. DOI: 10.1016/J.Susc.2005.10.021  0.674
2006 Chen TP, Thomidis C, Abell J, Li W, Moustakas TD. Growth of InN films by RF plasma-assisted MBE and cluster beam epitaxy Journal of Crystal Growth. 288: 254-260. DOI: 10.1016/J.Jcrysgro.2005.12.074  0.594
2006 Colakerol L, Glans P, Plucinski L, Zhang Y, Smith K, Zakharov A, Nyholm R, Cabalu J, Moustakas T. Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN Journal of Electron Spectroscopy and Related Phenomena. 152: 25-28. DOI: 10.1016/J.Elspec.2006.03.001  0.352
2005 Williams A, Moustakas TD. Planarization of GaN by the Etch-Back Method Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff14-11  0.324
2005 Cabalu JS, Williams A, Chen TP, Moustakas TD. Visible Light-Emitting Diodes Grown by Plasma Assisted Molecular Beam Epitaxy on Hydride Vapor-Phase Epitaxy GaN Templates and the Development of Dichromatic (Phosphorless) White LEDs Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff12-04  0.84
2005 Friel I, Thomidis C, Moustakas TD. Ultraviolet electroabsorption modulator based on AlGaNGaN multiple quantum wells Journal of Applied Physics. 97. DOI: 10.1063/1.1937471  0.719
2005 Plucinski L, Learmonth T, Colakerol L, Bernardis S, Zhang Y, Glans PA, Smith KE, Zakharov AA, Nyholm R, Grzegory I, Suski T, Porowski S, Friel I, Moustakas TD. Resonant shake-up satellites in photoemission at the Ga 3p photothreshold in GaN Solid State Communications. 136: 191-195. DOI: 10.1016/J.Ssc.2005.07.030  0.667
2005 Friel I, Driscoll K, Kulenica E, Dutta M, Paiella R, Moustakas TD. Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption Journal of Crystal Growth. 278: 387-392. DOI: 10.1016/J.Jcrysgro.2005.01.042  0.746
2005 Xu T, Thomidis C, Friel I, Moustakas TD. Growth and silicon doping of AlGaN films in the entire alloy composition by molecular beam epitaxy Physica Status Solidi C: Conferences. 2: 2220-2223. DOI: 10.1002/Pssc.200461595  0.734
2004 Xu T, Williams A, Thomidis C, Moustakas TD, Zhou L, Smith DJ. GaN Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy Mrs Proceedings. 831: 75-80. DOI: 10.1557/Proc-831-E2.4  0.463
2004 Bhattacharyya A, Li W, Cabalu J, Moustakas TD, Smith DJ, Hervig RL. Efficient p -type doping of GaN films by plasma-assisted molecular beam epitaxy Applied Physics Letters. 85: 4956-4958. DOI: 10.1063/1.1826223  0.825
2004 Friel I, Thomidis C, Moustakas TD. Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells Applied Physics Letters. 85: 3068-3070. DOI: 10.1063/1.1804253  0.712
2004 Friel I, Thomidis C, Fedyunin Y, Moustakas TD. Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies Journal of Applied Physics. 95: 3495-3502. DOI: 10.1063/1.1651323  0.721
2003 Wraback M, Shen H, Sampath AV, Collins CJ, Garrett GA, Sarney WL, Fedyunin Y, Cabalu J, Moustakas TD. Time-Resolved Reflectivity Studies of Electric Field Effects in III-Nitride Semiconductors Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y6.10  0.773
2003 Doppalapudi D, Mlcak R, Chan J, Tuller H, Bhattacharya A, Moustakas T. MBE Grown AlN Films on SiC for Piezoelectric MEMS Sensors Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.61  0.315
2003 Cabalu JS, Gunter LL, Friel I, Bhattacharyya A, Fedyunin Y, Chu K, Bellotti E, Eddy C, Moustakas TD. Design and Fabrication of GaN-based Permeable-Base Transistors Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.21  0.774
2003 Downes JE, Smith KE, Matsuura AY, Lindau I, Iliopoulos E, Moustakas TD. Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study Journal of Applied Physics. 94: 5820-5825. DOI: 10.1063/1.1617356  0.635
2003 Iliopoulos E, Ludwig KF, Moustakas TD. Complex ordering in ternary wurtzite nitride alloys Journal of Physics and Chemistry of Solids. 64: 1525-1532. DOI: 10.1016/S0022-3697(03)00094-5  0.677
2003 Bhattacharyya A, Friel I, Iyer S, Chen TC, Li W, Cabalu J, Fedyunin Y, Ludwig KF, Moustakas TD, Maruska HP, Hill DW, Gallagher JJ, Chou MC, Chai B. Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1 1̄ 0 0) and (0 0 0 1) GaN Journal of Crystal Growth. 251: 487-493. DOI: 10.1016/S0022-0248(02)02433-8  0.832
2002 Sampath AV, Bhattacharyya A, Singh R, Eddy CR, Lamarre P, Stacey WF, Morris RS, Moustakas TD. Growth and Fabrication of High Reverse Breakdown Heterojunction n-Gan: p-6H-Sic Diodes Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L6.34  0.716
2002 Iyer S, Smith DJ, Bhattacharyya A, Ludwig K, Moustakas TD. Growth and Characterization of non-polar (11–20) GaN and AlGaN/GaN MQWs on R-plane (10–12) sapphire Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L3.20  0.637
2002 Shao Y, Chen TC, Fenner DB, Moustakas TD, Chu G. Nitrogen Gas-Cluster Ion Beam – A New Nitrogen Source for GaN Growth Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L3.10  0.312
2002 McGuinness C, Downes JE, Ryan P, Smith KE, Doppalapudi D, Moustakas TD. X-ray Spectroscopic Studies of the Bulk Electronic Structure of InGaN Alloys Mrs Proceedings. 743: 621-626. DOI: 10.1557/Proc-743-L10.11  0.346
2002 Bhattacharyya A, Iyer S, Iliopoulos E, Sampath AV, Cabalu J, Moustakas TD, Friel I. High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1229-1233. DOI: 10.1116/1.1482070  0.764
2002 Ryan P, McGuinness C, Downes JE, Smith KE, Doppalapudi D, Moustakas TD. Band-gap evolution, hybridization, and thermal stability of In x Ga 1¿x N alloys measured by soft X-ray emission and absorption Physical Review B. 65: 205201. DOI: 10.1103/Physrevb.65.205201  0.342
2002 Komninou P, Kehagias T, Kioseoglou J, Dimitrakopulos GP, Sampath A, Moustakas TD, Nouet G, Karakostas T. Interfacial and defect structures in multilayered GaN/AlN films Journal of Physics: Condensed Matter. 14: 13277-13283. DOI: 10.1088/0953-8984/14/48/378  0.389
2002 Iliopoulos E, Moustakas TD. Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 81: 295-297. DOI: 10.1063/1.1492853  0.674
2001 Iliopoulos E, Ludwig KF, Moustakas TD, Chu SNG. Chemical ordering in AlGaN alloys grown by molecular beam epitaxy Applied Physics Letters. 78: 463-465. DOI: 10.1063/1.1341222  0.662
2001 Iliopoulos E, Ludwig KF, Moustakas TD, Komninou P, Karakostas T, Nouet G, Chu SNG. Epitaxial growth and self-organized superlattice structures in AlGaN films grown by plasma assisted molecular beam epitaxy Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 87: 227-236. DOI: 10.1016/S0921-5107(01)00735-8  0.67
2001 Katsikini M, Paloura EC, Antonopoulos J, Bressler P, Moustakas TD. Study of group-III binary and ternary nitrides using X-ray absorption fine structure measurements Journal of Crystal Growth. 230: 405-409. DOI: 10.1016/S0022-0248(01)01258-1  0.334
2001 Moustakas TD, Iliopoulos E, Sampath AV, Ng HM, Doppalapudi D, Misra M, Korakakis D, Singh R. Growth and device applications of III-nitrides by MBE Journal of Crystal Growth. 227: 13-20. DOI: 10.1016/S0022-0248(01)00625-X  0.826
2000 Misra M, Sampath AV, Moustakas TD. Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 5: 584-590. DOI: 10.1557/S1092578300004798  0.742
2000 Sampath AV, Misra M, Seth K, Fedyunin Y, Ng HM, Iliopoulos E, Feit Z, Moustakas TD. A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates Mrs Internet Journal of Nitride Semiconductor Research. 5: 577-583. DOI: 10.1557/S1092578300004786  0.822
2000 Ng HM, Moustakas TD. High reflectance III-Nitride Bragg reflectors grown by molecular beam epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 5: 28-34. DOI: 10.1557/S109257830000404X  0.436
2000 Singh R, Eddy CR, Moustakas TD, Ng HM. High Density Plasma Etching Damage Effects on Contacts to n -GaN Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G6.61  0.602
2000 Ng HM, Moustakas TD, Chu SNG. High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy Applied Physics Letters. 76: 2818-2820. DOI: 10.1063/1.126483  0.656
2000 Misra M, Sampath AV, Moustakas TD. Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes Applied Physics Letters. 76: 1045-1047. DOI: 10.1063/1.125933  0.764
2000 Ryan P, Chao YC, Downes J, McGuinness C, Smith KE, Sampath AV, Moustakas TD. Surface electronic structure of p-type GaN(0001̄) Surface Science. 467. DOI: 10.1016/S0039-6028(00)00820-7  0.633
1999 Misra M, Doppalapudi D, Sampath AV, Moustakas TD, McDonald PH. Generation Recombination Noise in GaN Photoconducting Detectors Mrs Internet Journal of Nitride Semiconductor Research. 4: 817-822. DOI: 10.1557/S1092578300003471  0.684
1999 Bunea GE, Dunham ST, Moustakas TD. Modeling of a GaN based static induction transistor Mrs Internet Journal of Nitride Semiconductor Research. 4. DOI: 10.1557/S1092578300003276  0.319
1999 Misra M, Sampath AV, Moustakas TD. Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.2  0.742
1999 Sampath AV, Misra M, Seth K, Fedyunin Y, Ng HM, Iliopoulos E, Feit Z, Moustakas TD. A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.1  0.817
1999 Ng HM, Moustakas TD. High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W1.8  0.367
1999 Mintairov AM, Vlasov AS, Merz JL, Korakakis D, Moustakas TD, Osinsky AO, Gaska R, Smirnov MB. Disorder Induced IR Anomaly in Hexagonal AlGaN Short-Period Superlattices and Alloys Mrs Proceedings. 572: 427. DOI: 10.1557/Proc-572-427  0.302
1999 Valla T, Johnson PR, Dhesi SS, Smith KE, Doppalapudi D, Moustakas TD, Shirley EL. Unoccupied Band Structure Of Wurtzite Gan(0001) Physical Review B. 59: 5003-5007. DOI: 10.1103/Physrevb.59.5003  0.337
1999 Doppalapudi D, Iliopoulos E, Basu SN, Moustakas TD. Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy Journal of Applied Physics. 85: 3582-3589. DOI: 10.1063/1.369718  0.705
1999 Doppalapudi D, Basu SN, Moustakas TD. Domain structure in chemically ordered InxGa1−xN alloys grown by molecular beam epitaxy Journal of Applied Physics. 85: 883-886. DOI: 10.1063/1.369250  0.387
1999 Holtz M, Seon M, Prokofyeva T, Temkin H, Singh R, Dabkowski FP, Moustakas TD. Micro-Raman imaging of GaN hexagonal island structures Applied Physics Letters. 75: 1757-1759. DOI: 10.1063/1.124810  0.314
1999 Misra M, Korakakis D, Ng HM, Moustakas TD. Photoconductive detectors based on partially ordered AlxGa1−xN alloys grown by molecular beam epitaxy Applied Physics Letters. 74: 2203-2205. DOI: 10.1063/1.123801  0.635
1999 Ng HM, Doppalapudi D, Iliopoulos E, Moustakas TD. Distributed Bragg reflectors based on AlN/GaN multilayers Applied Physics Letters. 74: 1036-1038. DOI: 10.1063/1.123447  0.754
1999 Ng HM, Doppalapudi D, Iliopoulos E, Moustakas TD. Erratum: “Distributed Bragg reflectors based on AlN/GaN multilayers” [Appl. Phys. Lett. 74, 1036 (1999)] Applied Physics Letters. 74: 4070-4070. DOI: 10.1063/1.123264  0.757
1999 Katsikini M, Paloura EC, Fieber-Erdmann M, Holub-Krappe E, Korakakis D, Moustakas TD. Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides Journal of Electron Spectroscopy and Related Phenomena. 101: 695-699. DOI: 10.1016/S0368-2048(98)00396-X  0.32
1998 Singh R, Barrett RJ, Gomes JJ, Dabkowski FP, Moustakas TD. Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300000855  0.439
1998 Misra M, Doppalapudi D, Sampath AV, Moustakas TD, McDonald PH. Generation Recombination Noise in GaN Photoconducting Detectors Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G7.8  0.694
1998 Doppalapudi D, Basu SN, Moustakas TD. Phase Separation and Ordering in InGaN alloys Mrs Proceedings. 512: 431. DOI: 10.1557/Proc-512-431  0.364
1998 Smith KE, Duda LC, Stagarescu CB, Downes J, Korakakis D, Singh R, Moustakas TD, Guo J, Nordgren J. Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N Journal of Vacuum Science & Technology B. 16: 2250-2253. DOI: 10.1116/1.590157  0.363
1998 Duda LC, Stagarescu CB, Downes J, Smith KE, Korakakis D, Moustakas TD, Guo J, Nordgren J. Density of states, hybridization, and band-gap evolution in AlxGa1-xN alloys Physical Review B. 58: 1928-1933. DOI: 10.1103/Physrevb.58.1928  0.308
1998 Doppalapudi D, Basu SN, Ludwig KF, Moustakas TD. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy Journal of Applied Physics. 84: 1389-1395. DOI: 10.1063/1.368251  0.375
1998 Katsikini M, Paloura EC, Moustakas TD. Experimental determination of the N-p-partial density of states in the conduction band of GaN: Determination of the polytype fractions in mixed phase samples Journal of Applied Physics. 83: 1437-1445. DOI: 10.1063/1.366905  0.346
1998 Weimann NG, Eastman LF, Doppalapudi D, Ng HM, Moustakas TD. Scattering of electrons at threading dislocations in GaN Journal of Applied Physics. 83: 3656-3659. DOI: 10.1063/1.366585  0.575
1998 Ng HM, Doppalapudi D, Moustakas TD, Weimann NG, Eastman LF. The role of dislocation scattering in n-type GaN films Applied Physics Letters. 73: 821-823. DOI: 10.1063/1.122012  0.648
1998 Iliopoulos E, Doppalapudi D, Ng HM, Moustakas TD. Broadening of near-band-gap photoluminescence in n-GaN films Applied Physics Letters. 73: 375-377. DOI: 10.1063/1.121839  0.766
1998 Torvik JT, Leksono M, Pankove JI, Van Zeghbroeck B, Ng HM, Moustakas TD. Electrical characterization of GaN/SiC n-p heterojunction diodes Applied Physics Letters. 72: 1371-1373. DOI: 10.1063/1.121058  0.653
1998 Korakakis D, Ludwig KF, Moustakas TD. X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes Applied Physics Letters. 72: 1004-1006. DOI: 10.1063/1.120976  0.44
1998 Torvik JT, Pankove JI, Iliopoulos E, Ng HM, Moustakas TD. Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy Applied Physics Letters. 72: 244-245. DOI: 10.1063/1.120698  0.78
1998 Ng HM, Doppalapudi D, Korakakis D, Singh R, Moustakas TD. MBE growth and doping of III–V nitrides Journal of Crystal Growth. 189: 349-353. DOI: 10.1016/S0022-0248(98)00291-7  0.464
1997 Smith KE, Dhesi SS, Stagarescu CB, Downes J, Doppalapudi D, Moustakas TD. Photoemission study of the electronic structure of wurtzite GaN(0001) surfaces Mrs Proceedings. 482: 787-792. DOI: 10.1557/Proc-482-787  0.305
1997 Iliopoulos E, Doppalapudi D, Ng HM, Moustakas TD. Near Band Gap Photoluminescence Broadening In n-Gan Films Mrs Proceedings. 482. DOI: 10.1557/Proc-482-655  0.657
1997 Doppalapudi D, Iliopoulos E, Basu SN, Moustakas TD. Effect of Nitridation and Buffer in GaN Films Grown on A-Plane (11-20) Sapphire Mrs Proceedings. 482. DOI: 10.1557/Proc-482-51  0.684
1997 Ng HM, Doppalapudi D, Singh R, Moustakas TD. Electron Mobility of N-Type GaN Films Mrs Proceedings. 482. DOI: 10.1557/Proc-482-507  0.396
1997 Katsikini M, Paloura EC, Fieber-Erdmann M, Holub-Krappe E, Moustakas TD. The Effect Of Si And Mg Doping In The Microstructure Of Epitaxially Grown Gan Mrs Proceedings. 482: 381. DOI: 10.1557/Proc-482-381  0.342
1997 Moustakas TD, Singh R, KOrakakis D, Doppalapudi D, Ng Hm, Sampath A, Iliopoulos E, Misra M. Phase Separation and Atomic Ordering in AlGaInN Alloys Mrs Proceedings. 482: 193. DOI: 10.1557/Proc-482-193  0.745
1997 Sampath A, Ng HM, Korakakis D, Moustakas TD. Metal Contacts to n- Al X Ga 1-x N Mrs Proceedings. 482: 1095. DOI: 10.1557/Proc-482-1095  0.645
1997 Katsikini M, Paloura EC, Fieber-Erdmann M, Kalomiros J, Moustakas TD, Amano H, Akasaki I. N K-edge x-ray-absorption study of heteroepitaxial GaN films Physical Review B. 56: 13380-13386. DOI: 10.1103/Physrevb.56.13380  0.33
1997 Dhesi SS, Stagarescu CB, Smith KE, Doppalapudi D, Singh R, Moustakas TD. Surface and bulk electronic structure of thin-film wurtzite GaN Physical Review B. 56: 10271-10275. DOI: 10.1103/Physrevb.56.10271  0.356
1997 Korakakis D, Ludwig KF, Moustakas TD. Long range order in AlxGa1−xN films grown by molecular beam epitaxy Applied Physics Letters. 71: 72-74. DOI: 10.1063/1.119916  0.427
1997 Herzog WD, Singh R, Moustakas TD, Goldberg BB, Ünlü MS. Photoluminescence microscopy of InGaN quantum wells Applied Physics Letters. 70: 1333-1335. DOI: 10.1063/1.118600  0.488
1997 Singh R, Doppalapudi D, Moustakas TD, Romano LT. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition Applied Physics Letters. 70: 1089-1091. DOI: 10.1063/1.118493  0.417
1997 Romano LT, Krusor BS, Singh R, Moustakas TD. Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire Journal of Electronic Materials. 26: 285-289. DOI: 10.1007/S11664-997-0165-X  0.402
1996 Korakakis D, Ng HM, Misra M, Grieshaber W, Moustakas TD. Growth and Doping of AlGaN Alloys by ECR-assisted MBE Mrs Internet Journal of Nitride Semiconductor Research. 1. DOI: 10.1557/S1092578300001824  0.736
1996 Misra M, Korakakis D, Singh R, Sampath A, Moustakas TD. Photoconducting Properties of Ultraviolet Detectors Based on GaN and Al1-xGaxN Films Grown by ECR-MBE Mrs Proceedings. 449. DOI: 10.1557/Proc-449-597  0.739
1996 Katsikini M, Paloura EC, Fieber-Erdmann M, Moustakas TD, Amano H, Akasaki I. N-K-Edge EXAFS Study of Epitaxial GaN Films Mrs Proceedings. 449: 459. DOI: 10.1557/Proc-449-459  0.301
1996 Katsikini M, Paloura EC, Moustakas TD, Holub-Krappe E, Antonopoulos J. Determination of the Percentage of the Cubic and Hexagonal Phases in Gan with Nexafs Mrs Proceedings. 449: 411. DOI: 10.1557/Proc-449-411  0.311
1996 Korakakis D, Ng HM, Ludwig KF, Moustakas TD. Doping Studies of n- and p-Type AlxGa1-xN Grown by ECR-Assisted MBE Mrs Proceedings. 449. DOI: 10.1557/Proc-449-233  0.432
1996 Singh R, Herzog W, Doppalapudi D, ÜnlÜ M, Goldberg B, Moustakas T. MBE Growth and Optical Characterization of InGaN/AlGaN Multiquantum Wells Mrs Proceedings. 449. DOI: 10.1557/Proc-449-185  0.473
1996 Vaudo RP, Goepfert ID, Moustakas TD, Beyea DM, Frey TJ, Meehan K. Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics. 79: 2779-2783. DOI: 10.1063/1.361109  0.474
1996 Singh R, Doppalapudi D, Moustakas TD. Growth and properties of InxGa1−xN/AlyGa1−yN multiquantum wells developed by molecular beam epitaxy Applied Physics Letters. 69: 2388-2390. DOI: 10.1063/1.117646  0.452
1996 Katsikini M, Paloura EC, Moustakas TD. Application of near‐edge x‐ray absorption fine structure for the identification of hexagonal and cubic polytypes in epitaxial GaN Applied Physics Letters. 69: 4206-4208. DOI: 10.1063/1.116987  0.327
1996 Ambacher O, Rieger W, Ansmann P, Angerer H, Moustakas TD, Stutzmann M. Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy Solid State Communications. 97: 365-370. DOI: 10.1016/0038-1098(95)00658-3  0.39
1995 Perlin P, Suski T, Teisseyre H, Leszczynski M, Grzegory II, Jun J, Porowski S, Boguslawski P, Bernholc J, Chervin J, Polian A, Moustakas T. Towards the identification of the dominant donor in GaN. Physical Review Letters. 75: 296-299. PMID 10059658 DOI: 10.1103/Physrevlett.75.296  0.301
1995 Bretschneider E, Davydov A, McCreary C, Wang L, Anderson TJ, Maruska HP, Norris PE, Goepfert I, Moustakas TD. ZnS/Si/ZnS Quantum Well Structures for Visible Light Emission Mrs Proceedings. 405. DOI: 10.1557/Proc-405-295  0.375
1995 Singh R, Moustakas T. Growth of InGaN Films by MBE at the Growth Temperature of GaN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-163  0.415
1995 Korakakis D, Sampath A, Ng HM, Morales G, Goepfert ID, Moustakas TD. Growth and doping of GaN directly on 6H-SiC by MBE Mrs Proceedings. 395: 151. DOI: 10.1557/Proc-395-151  0.681
1995 Moustakas TD. Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE Mrs Proceedings. 395: 111. DOI: 10.1557/Proc-395-111  0.462
1995 Teisseyre H, Perlin P, Leszczyński M, Suski T, Dmowski L, Grzegory I, Porowski S, Jun J, Moustakas TD. Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap Acta Physica Polonica A. 87: 403-406. DOI: 10.12693/Aphyspola.87.403  0.378
1995 Suski T, Perlin P, Teisseyre H, Leszczyński M, Grzegory I, Jun J, Boćkowski M, Porowski S, Moustakas TD. Mechanism of yellow luminescence in GaN Applied Physics Letters. 67: 2188-2190. DOI: 10.1063/1.115098  0.33
1995 Molnar RJ, Singh R, Moustakas TD. Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy Applied Physics Letters. 66: 268-270. DOI: 10.1063/1.113513  0.452
1995 Logothetidis S, Petalas J, Cardona M, Moustakas TD. The optical properties and electronic transitions of cubi and hexagonal GaN films between 1.5 and 10 eV Materials Science and Engineering B-Advanced Functional Solid-State Materials. 29: 65-69. DOI: 10.1016/0921-5107(94)04011-R  0.375
1995 Molnar RJ, Singh R, Moustakas TD. Operation of a compact electron cyclotron resonance source for the growth of gallium nitride by molecular beam epitaxy (ECR-MBE) Journal of Electronic Materials. 24: 275-281. DOI: 10.1007/Bf02659687  0.386
1994 Logothetidis S, Petalas J, Cardona M, Moustakas TD. Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN. Physical Review. B, Condensed Matter. 50: 18017-18029. PMID 9976231 DOI: 10.1103/Physrevb.50.18017  0.43
1994 Basu SN, Lei T, Moustakas TD. Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy Journal of Materials Research. 9: 2370-2378. DOI: 10.1557/Jmr.1994.2370  0.423
1994 Teisseyre H, Perlin P, Suski T, Grzegory I, Porowski S, Jun J, Pietraszko A, Moustakas TD. Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer Journal of Applied Physics. 76: 2429-2434. DOI: 10.1063/1.357592  0.342
1994 Molnar RJ, Moustakas TD. Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species Journal of Applied Physics. 76: 4587-4595. DOI: 10.1063/1.357293  0.383
1994 Leszczynski M, Suski T, Teisseyre H, Perlin P, Grzegory I, Jun J, Porowski S, Moustakas TD. Thermal expansion of gallium nitride Journal of Applied Physics. 76: 4909-4911. DOI: 10.1063/1.357273  0.318
1994 Jin S, Moustakas TD. Effect of nitrogen on the growth of diamond films Applied Physics Letters. 65: 403-405. DOI: 10.1063/1.112315  0.392
1994 Singh R, Molnar RJ, Ünlü MS, Moustakas TD. Intensity dependence of photoluminescence in GaN thin films Applied Physics Letters. 64: 336-338. DOI: 10.1063/1.111968  0.445
1994 Brandt MS, Johnson NM, Molnar RJ, Singh R, Moustakas TD. Hydrogenation of p‐type gallium nitride Applied Physics Letters. 64: 2264-2266. DOI: 10.1063/1.111639  0.393
1993 Fanciulli M, Moustakas TD. Native Paramagnetic Defects in Diamond Films Materials Science Forum. 35-40. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.35  0.317
1993 Manfra M, Berkowitz S, Molnar R, Clark A, Moustakas TD, Skocpol WJ. Reactive Ion Etching of GaN Thin Films Mrs Proceedings. 324: 477. DOI: 10.1557/Proc-324-477  0.342
1993 Fanciulli M, Lei T, Moustakas TD. Conduction-electron spin resonance in zinc-blende GaN thin films Physical Review B. 48: 15144-15147. DOI: 10.1103/Physrevb.48.15144  0.304
1993 Lei T, Ludwig KF, Moustakas TD. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates Journal of Applied Physics. 74: 4430-4437. DOI: 10.1063/1.354414  0.385
1993 Eddy CR, Moustakas TD, Scanlon J. Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy Journal of Applied Physics. 73: 448-455. DOI: 10.1063/1.353870  0.427
1993 Foresi JS, Moustakas TD. Metal contacts to gallium nitride Applied Physics Letters. 62: 2859-2861. DOI: 10.1063/1.109207  0.363
1993 Molnar RJ, Lei T, Moustakas TD. Electron transport mechanism in gallium nitride Applied Physics Letters. 62: 72-74. DOI: 10.1063/1.108823  0.334
1993 Fanciulli M, Moustakas TD. Study of defects in wide band gap semiconductors by electron paramagnetic resonance Physica B-Condensed Matter. 185: 228-233. DOI: 10.1016/0921-4526(93)90242-X  0.357
1993 Moustakas TD, Lei T, Molnar RJ. Growth of GaN by ECR-assisted MBE Physica B: Physics of Condensed Matter. 185: 36-49. DOI: 10.1016/0921-4526(93)90213-P  0.451
1993 Paul W, Lewis A, Connell G, Moustakas T. Doping, Schottky barrier and p-n junction formation in amorphous germanium and silicon by rf sputtering Solid State Communications. 88: 1019-1022. DOI: 10.1016/0038-1098(93)90287-W  0.393
1992 Molnar RJ, Lei T, Moustakas TD. High Mobility GaN films Produced by ECR-Assisted MBE Mrs Proceedings. 281: 765. DOI: 10.1557/Proc-281-765  0.367
1992 Moustakas TD, Molnar RJ. GROWTH AND DOPING OF GaN FILMS BY ECR-ASSISTED MBE Mrs Proceedings. 281: 753. DOI: 10.1557/Proc-281-753  0.46
1992 Jin S, Moustakas TD. Morphology of Diamond Films Produced by ECR-PACVD Mrs Proceedings. 280: 701. DOI: 10.1557/Proc-280-701  0.319
1992 Fanciulli M, Moustakas TD. EPR Investigation of Defects in Boron Nitride thin Films Mrs Proceedings. 242. DOI: 10.1557/Proc-242-605  0.331
1992 Lei T, Moustakas TD. A Comparative Study of GaN Epitaxy on Si(001) and SI(111) Substrates Mrs Proceedings. 242: 433. DOI: 10.1557/Proc-242-433  0.402
1992 Moustakas TD, Molnar RJ, Lei T, Menon G, Eddy CR. A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE Mrs Proceedings. 242: 427. DOI: 10.1557/Proc-242-427  0.425
1992 Bar-Yam Y, Lei T, Moustakas TD, Allan DC, Teter MP. Quasi-Equilibrium Nucleation and Growth of Diamond and Cubic Boron-Nitride Mrs Proceedings. 242. DOI: 10.1557/Proc-242-335  0.316
1992 Lei T, Moustakas TD, Graham RJ, He Y, Berkowitz SJ. Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon Journal of Applied Physics. 71: 4933-4943. DOI: 10.1063/1.350642  0.446
1991 Foresi JS, Moustakas TD. Piezoresistance and Quantum Confinement in Microcrystalline Silicon Mrs Proceedings. 256. DOI: 10.1557/Proc-256-77  0.392
1991 Graham RJ, Moustakas TD, Disko MM. Cathodoluminescence imaging of defects and impurities in diamond films grown by chemical vapor deposition Journal of Applied Physics. 69: 3212-3218. DOI: 10.1063/1.348539  0.341
1991 Lei T, Fanciulli M, Molnar RJ, Moustakas TD, Graham RJ, Scanlon J. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon Applied Physics Letters. 59: 944-946. DOI: 10.1063/1.106309  0.451
1991 Lei T, Toledo-Quinones M, Molnar RJ, Moustakas TD. Excitonic transitions in GaAsAlGaAs superlattices studied with lateral photoconductivity Solid State Communications. 80: 129-133. DOI: 10.1016/0038-1098(91)90300-K  0.321
1990 Werner A, Kunst M, Moustakas TD. Influence of the impurity concentration on charge carrier dynamics in GaAs films Applied Physics Letters. 56: 1558-1560. DOI: 10.1063/1.103152  0.372
1989 Bar-Yam Y, Moustakas TD. Theory and Experiment: Defect Stabilization of Diamond Films Through Multiple-Regrowth Mrs Proceedings. 162: 201. DOI: 10.1557/Proc-162-201  0.374
1989 Werner A, Agarwal AM, Moustakas TD, Kunst M. Charge Carrier Recombination in AlGaAs Studied by Time-Resolved Microwave Conductivity Experiments Mrs Proceedings. 145. DOI: 10.1557/Proc-145-481  0.384
1989 Werner A, Moustakas TD, Kunst M. Transient Photoconductivity in GaAs Films Grown by Molecular Beam Epitaxy. Mrs Proceedings. 145. DOI: 10.1557/Proc-145-461  0.413
1989 Bar-Yam Y, Moustakas TD. Defect-induced stabilization of diamond films Nature. 342: 786-787. DOI: 10.1038/342786A0  0.361
1988 Disko MM, Moustakas TD. Electron Microscopy and Spectroscopy of Vapor Deposited Diamond Mrs Proceedings. 138: 261. DOI: 10.1557/Proc-138-261  0.311
1987 Moustakas TD, Koo JY, Ozekcin A. Growth and Structure of Tungsten Carbide-Transition Metal Superlattices Mrs Proceedings. 103: 41. DOI: 10.1557/Proc-103-41  0.301
1986 Moustakas TD. Photovoltaic properties of amorphous silicon produced by reactive sputtering Solar Energy Materials. 13: 373-384. DOI: 10.1016/0165-1633(86)90085-7  0.415
1985 Moustakas TD, Maruska HP, Friedman R. Properties and photovoltaic applications of microcrystalline silicon films prepared by rf reactive sputtering Journal of Applied Physics. 58: 983-986. DOI: 10.1063/1.336145  0.397
1983 Moustakas TD, Maruska HP, Friedman R, Hicks M. Effect of boron compensation on the photovoltaic properties of amorphous silicon solar cells Applied Physics Letters. 43: 368-370. DOI: 10.1063/1.94340  0.363
1983 Maruska HP, Moustakas TD, Hicks MC. Effects of optical stress on the properties of sputtered amorphous silicon solar cells and thin films Solar Cells. 9: 37-51. DOI: 10.1016/0379-6787(83)90074-1  0.347
1982 Moustakas TD. Studies of thin-film growth of sputtered hydrogenated amorphous silicon Solar Energy Materials. 8: 187-204. DOI: 10.1016/0165-1633(82)90062-4  0.335
1981 Moustakas TD, Wronski CR, Tiedje T. Electron-hole recombination in reactively sputtered amorphous silicon solar cells Applied Physics Letters. 39: 721-723. DOI: 10.1063/1.92861  0.315
1980 Tiedje T, Abeles B, Morel DL, Moustakas TD, Wronski CR. Electron drift mobility in hydrogenated a‐Si Applied Physics Letters. 36: 695-697. DOI: 10.1063/1.91596  0.325
1980 Moustakas TD. Photogeneration, optical absorption and transport in hydrogenated sputtered amorphous silicon Solid State Communications. 35: 745-751. DOI: 10.1016/0038-1098(80)91067-4  0.327
1980 Moustakas TD, Wronski CR, Morel DL. Photovoltaic properties of reactively sputtered a-SiHx films Journal of Non-Crystalline Solids. 719-724. DOI: 10.1016/0022-3093(80)90288-4  0.362
1979 Moustakas TD. Sputtered hydrogenated amorphous silicon Journal of Electronic Materials. 8: 391-435. DOI: 10.1007/Bf02655635  0.349
1977 Moustakas TD, Paul W. Transport and recombination in sputtered hydrogenated amorphous germanium Physical Review B. 16: 1564-1576. DOI: 10.1103/Physrevb.16.1564  0.34
1977 Moustakas TD, Anderson DA, Paul W. Preparation of highly photoconductive amorphous silicon by rf sputtering Solid State Communications. 23: 155-158. DOI: 10.1016/0038-1098(77)90099-0  0.335
1976 Moustakas TD, Connell GAN. Amorphous GexH1−x bolometers Journal of Applied Physics. 47: 1322-1326. DOI: 10.1063/1.322834  0.349
Show low-probability matches.