| Year |
Citation |
Score |
| 2023 |
Mandal KC, Chaudhuri SK, Nag R. High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications. Micromachines. 14. PMID 37630068 DOI: 10.3390/mi14081532 |
0.302 |
|
| 2020 |
Mandal KC, Kleppinger JW, Chaudhuri SK. Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices. Micromachines. 11. PMID 32121162 DOI: 10.3390/Mi11030254 |
0.413 |
|
| 2020 |
Sajjad M, Chaudhuri SK, Kleppinger JW, Mandal KC. Growth of Large-Area Cd₀.₉Zn₀.₁Te Single Crystals and Fabrication of Pixelated Guard-Ring Detector for Room-Temperature γ-Ray Detection Ieee Transactions On Nuclear Science. 67: 1946-1951. DOI: 10.1109/Tns.2020.3007379 |
0.515 |
|
| 2020 |
Chaudhuri SK, Sajjad M, Kleppinger JW, Mandal KC. Correlation of Space Charge Limited Current and γ-Ray Response of Cd x Zn 1-x Te 1-y Se y Room-Temperature Radiation Detectors Ieee Electron Device Letters. 41: 1336-1339. DOI: 10.1109/Led.2020.3013800 |
0.45 |
|
| 2020 |
Chaudhuri SK, Kleppinger JW, Mandal KC. Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects Journal of Applied Physics. 128: 114501. DOI: 10.1063/5.0021403 |
0.501 |
|
| 2020 |
Chaudhuri SK, Sajjad M, Kleppinger JW, Mandal KC. Charge transport properties in CdZnTeSe semiconductor room-temperature γ-ray detectors Journal of Applied Physics. 127: 245706. DOI: 10.1063/5.0006227 |
0.442 |
|
| 2020 |
Chaudhuri SK, Sajjad M, Mandal KC. Pulse-shape analysis in Cd0.9Zn0.1Te0.98Se0.02 room-temperature radiation detectors Applied Physics Letters. 116: 162107. DOI: 10.1063/5.0003646 |
0.378 |
|
| 2017 |
Das AC, Bhattacharya S, Jewariya M, Prabhu SS, Mandal KC, Ozaki T, Datta PK. Identification of Combination Phonon Modes in Pure and Doped GaSe Crystals by THz Spectroscopy Ieee Journal of Selected Topics in Quantum Electronics. 23: 1-7. DOI: 10.1109/Jstqe.2017.2676041 |
0.311 |
|
| 2017 |
Samanta P, Mandal KC. Leakage current conduction, hole injection, and time-dependent dielectric breakdown ofn-4H-SiC MOS capacitors during positive bias temperature stress Journal of Applied Physics. 121: 034501. DOI: 10.1063/1.4973674 |
0.431 |
|
| 2016 |
Nguyen KV, Mandal KC. Ru-induced deep levels in Ru/4H-SiC epilayer Schottky diodes by deep level transient spectroscopy Ecs Journal of Solid State Science and Technology. 5: P3078-P3081. DOI: 10.1149/2.0131604Jss |
0.327 |
|
| 2016 |
Das S, Chaudhuri SK, Mandal KC. Deep level studies in high-resistive gallium phosphide single crystals Ecs Journal of Solid State Science and Technology. 5: P3059-P3063. DOI: 10.1149/2.0101604Jss |
0.376 |
|
| 2016 |
Pak RO, Mandal KC. Defect levels in nuclear detector grade Cd0.9Zn0.1Te crystals Ecs Journal of Solid State Science and Technology. 5: P3037-P3040. DOI: 10.1149/2.0091604Jss |
0.535 |
|
| 2016 |
Samanta P, Mandal KC. Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC Proceedings of Spie. 9968. DOI: 10.1117/12.2238875 |
0.437 |
|
| 2016 |
Oner C, Chowdhury TA, Pak RO, Mandal KC. Improved radiation detectors on 4H-SiC epilayers by edge termination Proceedings of Spie. 9968. DOI: 10.1117/12.2238874 |
0.418 |
|
| 2016 |
Das AC, Bhattacharya S, Mandal KC, Mondal S, Jewariya M, Ozaki T, Bhaktha SNB, Datta PK. Dielectric response of pure and doped-GaSe crystals studied by an indigenously developed broadband THz-TDS system Proceedings of Spie - the International Society For Optical Engineering. 9894. DOI: 10.1117/12.2227357 |
0.382 |
|
| 2016 |
Schmidtlein CR, Turner JN, Thompson MO, Mandal KC, Häggström I, Zhang J, Humm JL, Feiglin DH, Krol A. Performance modeling of a wearable brain PET (BET) camera Progress in Biomedical Optics and Imaging - Proceedings of Spie. 9788. DOI: 10.1117/12.2217020 |
0.34 |
|
| 2016 |
Mannan MA, Nguyen KV, Pak RO, Oner C, Mandal KC. Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing Studies Ieee Transactions On Nuclear Science. 63: 1083-1090. DOI: 10.1109/Tns.2016.2535212 |
0.414 |
|
| 2016 |
Mannan MA, Nguyen KV, Mandal KC. Isochronal annealing on n-type 4H-SiC epitaxial schottky barriers and investigation of defect levels by deep level transient spectroscopy 2014 Ieee Nuclear Science Symposium and Medical Imaging Conference, Nss/Mic 2014. DOI: 10.1109/NSSMIC.2014.7431286 |
0.364 |
|
| 2016 |
Nguyen KV, Mannan MA, Mandal KC. Deep levels in n-type 4H-SiC epitaxial Schottky detectors by deep level transient spectroscopy and effects of edge termination on energy resolution 2014 Ieee Nuclear Science Symposium and Medical Imaging Conference, Nss/Mic 2014. DOI: 10.1109/NSSMIC.2014.7431263 |
0.405 |
|
| 2016 |
Tang Y, Mandal KC, McGuire JA, Lai CW. Layer- and frequency-dependent second harmonic generation in reflection from GaSe atomic crystals Physical Review B. 94. DOI: 10.1103/Physrevb.94.125302 |
0.334 |
|
| 2016 |
Samanta P, Mandal KC. Simulation of temperature dependent dielectric breakdown in n +-polySi/SiO2/ n -6H-SiC structures during Poole-Frenkel stress at positive gate bias Journal of Applied Physics. 120. DOI: 10.1063/1.4960579 |
0.433 |
|
| 2016 |
Das S, Bhattacharya RN, Mandal KC. Performance limiting factors of Cu2ZnSn(SxSe1-x)4 solar cells prepared by thermal evaporation Solar Energy Materials and Solar Cells. 144: 347-351. DOI: 10.1016/J.Solmat.2015.09.012 |
0.358 |
|
| 2015 |
Nguyen KV, Pak RO, Oner C, Mannan MA, Mandal KC. High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS) Proceedings of Spie - the International Society For Optical Engineering. 9593. DOI: 10.1117/12.2196592 |
0.504 |
|
| 2015 |
Pak RO, Nguyen KV, Oner C, Mannan MA, Mandal KC. Defect characterization of Cd0.9Zn0.1Te crystals using electron beam induced current (EBIC) imaging and thermally stimulated current (TSC) measurements Proceedings of Spie - the International Society For Optical Engineering. 9593. DOI: 10.1117/12.2196590 |
0.531 |
|
| 2015 |
Oner C, Nguyen KV, Pak RO, Mannan MA, Mandal KC. Investigation of thermally evaporated high resistive B-doped amorphous selenium alloy films and metal contact studies Proceedings of Spie - the International Society For Optical Engineering. 9593. DOI: 10.1117/12.2196586 |
0.401 |
|
| 2015 |
Mannan MA, Nguyen KV, Pak R, Oner C, Mandal KC. Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer Proceedings of Spie - the International Society For Optical Engineering. 9593. DOI: 10.1117/12.2196582 |
0.508 |
|
| 2015 |
Nguyen KV, Mannan MA, Mandal KC. Improved n-Type 4H-SiC Epitaxial Radiation Detectors by Edge Termination Ieee Transactions On Nuclear Science. 62: 3199-3206. DOI: 10.1109/Tns.2015.2496902 |
0.492 |
|
| 2015 |
Samanta P, Mandal KC. Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling Solid-State Electronics. 114: 60-68. DOI: 10.1016/J.Sse.2015.07.009 |
0.402 |
|
| 2014 |
Nguyen KV, Chaudhuri SK, Mandal KC. Investigation of low leakage current radiation detectors on n-type 4H-SiC epitaxial layers Proceedings of Spie - the International Society For Optical Engineering. 9213. DOI: 10.1117/12.2063055 |
0.515 |
|
| 2014 |
Mandal KC, Krishna RM, Pak RO, Mannan MA. Characterization of high-resistivity CdTe and Cd0.9Zn0.1Te crystals grown by Bridgman method for radiation detector applications Proceedings of Spie - the International Society For Optical Engineering. 9213. DOI: 10.1117/12.2063054 |
0.742 |
|
| 2014 |
Mandal KC, Chaudhuri SK, Nguyen KV, Mannan MA. Correlation of deep levels with detector performance in 4H-SiC epitaxial schottky barrier alpha detectors Ieee Transactions On Nuclear Science. 61: 2338-2344. DOI: 10.1109/Tns.2014.2335736 |
0.478 |
|
| 2014 |
Chaudhuri SK, Nguyen K, Pak RO, Matei L, Buliga V, Groza M, Burger A, Mandal KC. Large Area Cd0.9 Zn0.1 pixelated detector: Fabrication and characterization Ieee Transactions On Nuclear Science. 61: 793-798. DOI: 10.1109/Tns.2014.2307861 |
0.544 |
|
| 2014 |
Mannan MA, Chaudhuri SK, Nguyen KV, Mandal KC. Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies Journal of Applied Physics. 115. DOI: 10.1063/1.4883317 |
0.428 |
|
| 2014 |
Das S, Chaudhuri SK, Bhattacharya RN, Mandal KC. Defect levels in Cu2ZnSn(SxSe1-x) 4 solar cells probed by current-mode deep level transient spectroscopy Applied Physics Letters. 104. DOI: 10.1063/1.4876925 |
0.338 |
|
| 2014 |
Das S, Mandal KC. Growth and characterization of kesterite Cu2ZnSn(S xSe1 - X)4 crystals for photovoltaic applications Materials Research Bulletin. 57: 135-139. DOI: 10.1016/J.Materresbull.2014.04.073 |
0.448 |
|
| 2013 |
Das S, Mandal KC. Optical down-conversion in doped ZnSe:Tb3+ nanocrystals. Nanoscale. 5: 913-5. PMID 23254368 DOI: 10.1039/C2Nr33243D |
0.309 |
|
| 2013 |
Das S, Mandal KC. Cu2ZnSnSe4 photovoltaic absorber grown by vertical gradient freeze technique Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.125502 |
0.466 |
|
| 2013 |
Zavalla KJ, Chaudhuri SK, Mandal KC. Fabrication of high-resolution nuclear detectors using 4H-SiC n-type Epitaxial layers Materials Research Society Symposium Proceedings. 1576. DOI: 10.1557/opl.2013.1195 |
0.374 |
|
| 2013 |
Chaudhuri SK, Zavalla KJ, Krishna RM, Mandal KC. Gamma ray detection with Cd0.9Zn0.1te based detectors grown using a te solvent method Materials Research Society Symposium Proceedings. 1576. DOI: 10.1557/opl.2013.1153 |
0.729 |
|
| 2013 |
Das S, Zavalla KJ, Mannan MA, Mandal KC. Fabrication and characterization of low-cost, Large-area spray deposited Cu2ZnSnS4 thin films for heterojunction solar cells Materials Research Society Symposium Proceedings. 1538: 115-121. DOI: 10.1557/Opl.2013.1001 |
0.371 |
|
| 2013 |
Zavalla KJ, Chaudhuri SK, Mandal KC. Fabrication of high resolution n-type 4H-SiC epitaxial layer alpha particle detectors, defect characterization and electronic noise analysis Proceedings of Spie - the International Society For Optical Engineering. 8852. DOI: 10.1117/12.2027142 |
0.464 |
|
| 2013 |
Mandal KC, Mehta A, Chaudhuri SK, Cui Y, Groza M, Burger A. Characterization of amorphous selenium alloy detectors for x-rays and high energy nuclear radiation detection Proceedings of Spie - the International Society For Optical Engineering. 8852. DOI: 10.1117/12.2027139 |
0.396 |
|
| 2013 |
Mandal KC, Muzykov PG, Chaudhuri SK, Terry JR. Low energy X-ray and γ-ray detectors fabricated on n-type 4H-SiC epitaxial layer Ieee Transactions On Nuclear Science. 60: 2888-2893. DOI: 10.1109/Tns.2013.2273673 |
0.531 |
|
| 2013 |
Chaudhuri SK, Krishna RM, Zavalla KJ, Matei L, Buliga V, Groza M, Burger A, Mandal KC. Cd0.9 Zn$0.1 te crystal growth and fabrication of large volume single-polarity charge sensing gamma detectors Ieee Transactions On Nuclear Science. 60: 2853-2858. DOI: 10.1109/Tns.2013.2270289 |
0.748 |
|
| 2013 |
Mandal KC, Chaudhuri SK, Nguyen K. An overview of application of 4H-SiC n-type epitaxial Schottky barrier detector for high resolution nuclear detection Ieee Nuclear Science Symposium Conference Record. DOI: 10.1109/NSSMIC.2013.6829844 |
0.344 |
|
| 2013 |
Chaudhuri SK, Nguyen K, Pak RO, Matei L, Buliga V, Groza M, Burger A, Mandal KC. Fabrication and characterization of large area Cd0.9Zn 0.1Te guarded pixelated detector Ieee Nuclear Science Symposium Conference Record. DOI: 10.1109/NSSMIC.2013.6829827 |
0.476 |
|
| 2013 |
Chaudhuri SK, Zavalla KJ, Krishna RM, Mandal KC. Biparametric analyses of charge trapping in Cd0.9Zn 0.1Te based virtual Frisch grid detectors Journal of Applied Physics. 113. DOI: 10.1063/1.4793268 |
0.728 |
|
| 2013 |
Chaudhuri SK, Zavalla KJ, Mandal KC. Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach Applied Physics Letters. 102. DOI: 10.1063/1.4776703 |
0.368 |
|
| 2013 |
Chaudhuri SK, Zavalla KJ, Mandal KC. High resolution alpha particle detection using 4H-SiC epitaxial layers: Fabrication, characterization, and noise analysis Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 728: 97-101. DOI: 10.1016/J.Nima.2013.06.076 |
0.467 |
|
| 2013 |
Chaudhuri SK, Krishna RM, Zavalla KJ, Mandal KC. Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 701: 214-220. DOI: 10.1016/J.Nima.2012.11.015 |
0.686 |
|
| 2013 |
Krishna RM, Chaudhuri SK, Zavalla KJ, Mandal KC. Characterization of Cd 0.9Zn 0.1Te based virtual Frisch grid detectors for high energy gamma ray detection Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 701: 208-213. DOI: 10.1016/J.Nima.2012.10.131 |
0.737 |
|
| 2013 |
Krishna RM, Muzykov PG, Mandal KC. Electron beam induced current imaging of dislocations in Cd 0.9Zn 0.1Te crystal Journal of Physics and Chemistry of Solids. 74: 170-173. DOI: 10.1016/J.Jpcs.2012.09.002 |
0.699 |
|
| 2013 |
Das S, Krishna RM, Ma S, Mandal KC. Single phase polycrystalline Cu2ZnSnS4 grown by vertical gradient freeze technique Journal of Crystal Growth. 381: 148-152. DOI: 10.1016/J.Jcrysgro.2013.07.022 |
0.677 |
|
| 2012 |
Das S, Mandal KC. Fabrication of improved p-AgGaSe 2/n-Si heterojunction solar cells on optimum quality thermally evaporated AgGaSe 2 thin films Materials Research Society Symposium Proceedings. 1323: 151-156. DOI: 10.1557/Opl.2011.958 |
0.355 |
|
| 2012 |
Krishna RM, Hayes TC, Muzykov PG, Mandal KC. Low temperature crystal growth and characterization of Cd 0.9Zn 0.1Te for radiation detection applications Materials Research Society Symposium Proceedings. 1341: 39-44. DOI: 10.1557/Opl.2011.1479 |
0.726 |
|
| 2012 |
Mandal KC, Muzykov PG, Terry JR. Design, fabrication, characterization, and evaluation of X-ray detectors based on n-type 4H-SiC epitaxial layer Ecs Transactions. 45: 27-33. DOI: 10.1149/1.3701522 |
0.411 |
|
| 2012 |
Chaudhuri SK, Krishna RM, Zavalla KJ, Mandal KC. High energy γ-ray detection using CZT detectors with virtual Frisch grid Proceedings of Spie. 8507. DOI: 10.1117/12.946027 |
0.728 |
|
| 2012 |
Mandal KC, Muzykov PG, Chaudhuri SK, Terry JR. Assessment of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 8507. DOI: 10.1117/12.946026 |
0.584 |
|
| 2012 |
Mandal KC, Muzykov PG, Krishna RM, Terry JR. Characterization of 4H-SiC epitaxial layers and high-resistivity bulk crystals for radiation detectors Ieee Transactions On Nuclear Science. 59: 1591-1596. DOI: 10.1109/Tns.2012.2202916 |
0.733 |
|
| 2012 |
Mandal KC, Krishna RM, Muzykov PG, Hayes TC. Fabrication and characterization of Cd 0.9Zn 0.1Te schottky diodes for high resolution nuclear radiation detectors Ieee Transactions On Nuclear Science. 59: 1504-1509. DOI: 10.1109/Tns.2012.2202324 |
0.753 |
|
| 2012 |
Chaudhuri SK, Krishna RM, Zavalla KJ, Matei L, Buliga V, Groza M, Burger A, Mandal KC. Performance of Cd0.9Zn0.1Te based high-energy gamma detectors in various single polarity sensing device geometries Ieee Nuclear Science Symposium Conference Record. 4266-4270. DOI: 10.1109/NSSMIC.2012.6551973 |
0.742 |
|
| 2012 |
Mandal KC, Muzykov PG, Chaudhuri SK, Terry JR. High-resolution x- and γ-ray detection using 4H-SiC n-type epitaxial layer Ieee Nuclear Science Symposium Conference Record. 4216-4221. DOI: 10.1109/NSSMIC.2012.6551961 |
0.426 |
|
| 2012 |
Mandal KC, Muzykov PG, Krishna RM, Hayes TC. Characterization of Cd 0.9Zn 0.1Te Schottky diodes for high resolution nuclear radiation detectors Ieee Nuclear Science Symposium Conference Record. 4578-4583. DOI: 10.1109/NSSMIC.2011.6154738 |
0.733 |
|
| 2012 |
Mandal KC, Muzykov PG, Krishna RM, Hayes TC. Defect correlation studies on 4H-SiC crystals and epitaxial layers for radiation detector applications Ieee Nuclear Science Symposium Conference Record. 4776-4782. DOI: 10.1109/NSSMIC.2011.6154713 |
0.709 |
|
| 2012 |
Mandal KC, Muzykov PG, Russell Terry J. Publisher’s Note: “Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers” [Appl. Phys. Lett. 101, 051111 (2012)] Applied Physics Letters. 101: 099901. DOI: 10.1063/1.4748860 |
0.416 |
|
| 2012 |
Mandal KC, Muzykov PG, Russell Terry J. Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers Applied Physics Letters. 101. DOI: 10.1063/1.4742741 |
0.484 |
|
| 2012 |
Muzykov PG, Krishna RM, Mandal KC. Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer Applied Physics Letters. 100. DOI: 10.1063/1.3676270 |
0.69 |
|
| 2012 |
Muzykov PG, Krishna RM, Mandal KC. Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy Journal of Applied Physics. 111. DOI: 10.1063/1.3675513 |
0.69 |
|
| 2012 |
Krishna RM, Hayes TC, Krementz D, Weeks G, Torres AM, Brinkman K, Mandal KC. Characterization of transparent conducting oxide thin films deposited on ceramic substrates Materials Letters. 66: 233-235. DOI: 10.1016/J.Matlet.2011.08.066 |
0.632 |
|
| 2012 |
Das S, Mandal KC. Optical downconversion in rare earth (Tb 3+ and Yb 3+) doped CdS nanocrystals Materials Letters. 66: 46-49. DOI: 10.1016/J.Matlet.2011.08.034 |
0.358 |
|
| 2011 |
Das S, Mandal KC. Synthesis and characterization of rare earth (Tb 3+and Yb 3+) doped CdS/ZnS core/shell nanocrystals for enhanced photovoltaic efficiency Materials Research Society Symposium Proceedings. 1322: 75-81. DOI: 10.1557/Opl.2011.1293 |
0.386 |
|
| 2011 |
Mandal KC, Muzykov PG, Krishna RM, Hayes TC. Fabrication and characterization of Cd0.9Zn0.1Te Schottky diodes for nuclear radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 8142. DOI: 10.1117/12.896640 |
0.747 |
|
| 2011 |
Mandal KC, Muzykov PG, Krishna RM, Hayes TC. Surface and defect correlation studies on high resistivity 4H SiC bulk crystals and epitaxial layers for radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 8142. DOI: 10.1117/12.896637 |
0.724 |
|
| 2011 |
Mandal KC, Krishna RM, Muzykov PG, Das S, Sudarshan TS. Characterization of semi-insulating 4H silicon carbide for radiation detectors Ieee Transactions On Nuclear Science. 58: 1992-1999. DOI: 10.1109/Tns.2011.2152857 |
0.765 |
|
| 2011 |
Mandal KC, Krishna RM, Hayes TC, Muzykov PG, Das S, Sudarshan TS, Ma S. Layered GaTe crystals for radiation detectors Ieee Transactions On Nuclear Science. 58: 1981-1986. DOI: 10.1109/Tns.2011.2140330 |
0.731 |
|
| 2011 |
Xu G, Sun G, Ding YJ, Zotova IB, Mandal KC, Mertiri A, Pabst G, Roy R, Fernelius NC. Investigation of Terahertz generation due to unidirectional diffusion of carriers in centrosymmetric GaTe crystals Ieee Journal On Selected Topics in Quantum Electronics. 17: 30-37. DOI: 10.1109/Jstqe.2010.2046628 |
0.363 |
|
| 2011 |
Mandal KC, Muzykov PG, Krishna R, Hayes T, Sudarshan TS. Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide Solid State Communications. 151: 532-535. DOI: 10.1016/J.Ssc.2011.01.019 |
0.71 |
|
| 2011 |
Xu G, Sun G, Ding YJ, Zotova IB, Mandal KC, Mertiri A, Pabst G, Fernelius N. Investigation of symmetries of second-order nonlinear susceptibility tensor of GaSe crystals in THz domain Optics Communications. 284: 2027-2030. DOI: 10.1016/J.Optcom.2010.12.025 |
0.363 |
|
| 2011 |
Muzykov PG, Krishna R, Das S, Hayes T, Sudarshan TS, Mandal KC. Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current Materials Letters. 65: 911-914. DOI: 10.1016/J.Matlet.2010.11.074 |
0.723 |
|
| 2010 |
Mandal KC, Das S, Krishna R, Muzykov PG, Ma S, Zhao F. Surface passivation of p-GaTe layered crystals for improved p-GaTe/n-InSe heterojunction solar cells Materials Research Society Symposium Proceedings. 1268: 77-82. DOI: 10.1557/Proc-1268-Ee02-10 |
0.716 |
|
| 2010 |
Mandal KC, Krishna R, Muzykov PG, Laney Z, Das S, Sudarshan TS. Radiation detectors based on 4H semi-insulating silicon carbide Proceedings of Spie - the International Society For Optical Engineering. 7805. DOI: 10.1117/12.863572 |
0.743 |
|
| 2010 |
Mandal KC, Hayes T, Muzykov PG, Krishna R, Das S, Sudarshan TS, Ma S. Characterization of gallium telluride crystals grown from graphite crucible Proceedings of Spie - the International Society For Optical Engineering. 7805. DOI: 10.1117/12.863570 |
0.732 |
|
| 2010 |
Mandal KC, Muzykov PG, Krishna RM, Das S, Sudarshan TS. Characterization of 4H semi-insulating silicon carbide for radiation detector applications Ieee Nuclear Science Symposium Conference Record. 3725-3731. DOI: 10.1109/NSSMIC.2010.5874508 |
0.743 |
|
| 2010 |
Rak Z, Mahanti SD, Mandal KC, Fernelius NC. Doping dependence of electronic and mechanical properties of GaSe 1-xTex and Ga1-xInxSe from first principles Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.155203 |
0.349 |
|
| 2010 |
Rák Z, Mahanti SD, Mandal KC, Fernelius NC. Defect-induced rigidity enhancement in layered semiconductors Solid State Communications. 150: 1200-1203. DOI: 10.1016/J.Ssc.2010.04.011 |
0.357 |
|
| 2010 |
Nelson AJ, Laurence TA, Conway AM, Behymer EM, Sturm BW, Voss LF, Nikolic RJ, Payne SA, Mertiri A, Pabst G, Mandal KC, Burger A. Spectroscopic investigation of (NH4)2S treated GaSeTe for radiation detector applications Materials Letters. 64: 393-395. DOI: 10.1016/J.Matlet.2009.11.027 |
0.366 |
|
| 2009 |
Rak Z, Mahanti SD, Mandal KC, Fernelius NC. Theoretical studies of defect states in GaTe. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 015504. PMID 21817225 DOI: 10.1088/0953-8984/21/1/015504 |
0.334 |
|
| 2009 |
Liu J, Mandal KC, Koley G. Investigation of nanoscale electronic properties of CdZnTe crystals by scanning spreading resistance microscopy Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/4/045012 |
0.449 |
|
| 2009 |
Nelson AJ, Conway AM, Sturm BW, Behymer EM, Reinhardt CE, Nikolic RJ, Payne SA, Pabst G, Mandal KC. X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications Journal of Applied Physics. 106. DOI: 10.1063/1.3176478 |
0.354 |
|
| 2009 |
Cui Y, Caudel DD, Bhattacharya P, Burger A, Mandal KC, Johnstone D, Payne SA. Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence Journal of Applied Physics. 105. DOI: 10.1063/1.3080157 |
0.47 |
|
| 2009 |
Rak Z, Mahanti SD, Mandal KC, Fernelius NC. Electronic structure of substitutional defects and vacancies in GaSe Journal of Physics and Chemistry of Solids. 70: 344-355. DOI: 10.1016/J.Jpcs.2008.10.022 |
0.325 |
|
| 2009 |
Rak Z, Mahanti SD, Mandal KC. Ab initio studies of hydrogen defects in cdte Journal of Electronic Materials. 38: 1539-1547. DOI: 10.1007/S11664-009-0751-1 |
0.321 |
|
| 2008 |
Mandal KC, Kang SH, Choi M, Rauh RD. Rare-earth doped potassium lead bromide mid-IR laser sources for standoff detection International Journal of High Speed Electronics and Systems. 18: 735-745. DOI: 10.1142/S0129156408005709 |
0.375 |
|
| 2008 |
Liu J, Mandal KC, Koley G. Investigation of CdZnTe crystal defects using scanning spreading resistance microscopy Proceedings of Spie - the International Society For Optical Engineering. 7079. DOI: 10.1117/12.796253 |
0.421 |
|
| 2008 |
Mandal KC, Mertiri A, Pabst GW, Roy RG, Cui Y, Battacharya P, Groza M, Burger A, Conway AM, Nikolic RJ, Nelson AJ, Payne SA. Layered III-VI chalcogenide semiconductor crystals for radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 7079. DOI: 10.1117/12.796235 |
0.516 |
|
| 2008 |
Rak Z, Mahanti SD, Mandal KC, Fernelius NC. Theoretical studies of defects states in GaSe and GaTe Proceedings of Spie - the International Society For Optical Engineering. 7079. DOI: 10.1117/12.796229 |
0.318 |
|
| 2008 |
Mandal KC, Kang SH, Choi M, Chen J, Zhang XC, Schleicher JM, Schmuttenmaer CA, Fernelius NC. III-VI chalcogenide semiconductor crystals for broadband tunable THz sources and sensors Ieee Journal On Selected Topics in Quantum Electronics. 14: 284-288. DOI: 10.1109/Jstqe.2007.912767 |
0.471 |
|
| 2008 |
Cui Y, Dupere R, Burger A, Johnstone D, Mandal KC, Payne SA. Acceptor levels in GaSe:In crystals investigated by deep-level transient spectroscopy and photoluminescence Journal of Applied Physics. 103. DOI: 10.1063/1.2831130 |
0.467 |
|
| 2007 |
Mandal K, Kang SH, Choi M, Mertiri A, Pabst GW, Noblitt C. Crystal Growth and Characterization of CdTe and Cd 0.9 Zn 0.1 Te for Nuclear Radiation Detectors Mrs Proceedings. 1038: 39-49. DOI: 10.1557/Proc-1038-O04-02 |
0.502 |
|
| 2007 |
Rak Z, Mahanti SD, Mandal KC, Fernelius NC. Electronic structure of Cd, In, Sn substitutional defects in GaSe Materials Research Society Symposium Proceedings. 994: 73-78. DOI: 10.1557/Proc-0994-F03-10 |
0.341 |
|
| 2007 |
Mandal KC, Kang SH, Choi MK. Layered compound semiconductor GaSe and GaTe crystals for THz applications Materials Research Society Symposium Proceedings. 969: 111-116. DOI: 10.1557/Proc-0969-W03-15 |
0.478 |
|
| 2007 |
Mandal KC, Choi M, Kang SH, Rauh RD, Wei J, Zhang H, Zheng L, Cui Y, Groza M, Burger A. GaSe and GaTe anisotropic layered semiconductors for radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 6706. DOI: 10.1117/12.739399 |
0.558 |
|
| 2007 |
Mandal KC, Kang SH, Choi M, Kargar A, Harrison MJ, McGregor DS, Bolotnikov AE, Carini GA, Camarda GC, James RB. Characterization of low-defect Cd0.9Zn0.1Te and CdTe crystals for high-performance frisch collar detectors Ieee Transactions On Nuclear Science. 54: 802-806. DOI: 10.1109/Tns.2007.902371 |
0.524 |
|
| 2007 |
Koley G, Liu J, Mandal KC. Investigation of CdZnTe crystal defects using scanning probe microscopy Applied Physics Letters. 90. DOI: 10.1063/1.2712496 |
0.414 |
|
| 2007 |
Mandal KC, Kang SH, Choi M, Wei J, Zheng L, Zhang H, Jellison GE, Groza M, Burger A. Component overpressure growth and characterization of high-resistivity CdTe crystals for radiation detectors Journal of Electronic Materials. 36: 1013-1020. DOI: 10.1007/S11664-007-0164-Y |
0.492 |
|
| 2007 |
Mandal KC, Kang SH, Choi M, Mertiri A, Pabst GW, Noblitt C. Crystal growth and characterization of cdte and Cd o.9Zn o.1Te for nuclear radiation detectors Materials Research Society Symposium Proceedings. 1038: 39-50. |
0.425 |
|
| 2006 |
Yu BL, Altan H, Zeng F, Kartazayev V, Alfano R, Mandal KC. Terahertz Resonances in the Dielectric Response Due to Second Order Phonons in a GaSe Crystal Mrs Proceedings. 935. DOI: 10.1557/Proc-0935-K03-08 |
0.324 |
|
| 2006 |
Mandal KC, Sung HK, Choi M, Jellison GE. Amorphous selenium based detectors for medical imaging applications Proceedings of Spie - the International Society For Optical Engineering. 6319. DOI: 10.1117/12.683817 |
0.369 |
|
| 2006 |
Mandal KC, Kang SH, Choi M, Wright G, Jellison GE. CdTe and Cd 0.9Zn 0.1Te crystal growth and characterization for nuclear spectrometers Proceedings of Spie - the International Society For Optical Engineering. 6319. DOI: 10.1117/12.683802 |
0.535 |
|
| 2006 |
Mandal KC, Kang SH, Choi M, Bello J, Zheng L, Zhang H, Groza M, Roy UN, Burger A, Jellison GE, Holcomb DE, Wright GW, Williams JA. Simulation, modeling, and crystal growth of Cd 0.9Zn 0.1Te for nuclear spectrometers Journal of Electronic Materials. 35: 1251-1256. DOI: 10.1007/S11664-006-0250-6 |
0.526 |
|
| 2005 |
Yu BL, Zeng F, Kartazayev V, Alfano RR, Mandal KC. Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2093944 |
0.341 |
|
| 2005 |
Mandal KC, Noblitt C, Choi M, Smirnov A, Rauh RD. Crystal growth, characterization and anisotropic electrical properties of GaSe single crystals for THz source and radiation detector applications Aip Conference Proceedings. 772: 159-160. DOI: 10.1063/1.1994042 |
0.385 |
|
| 2005 |
Roy UN, Hawrami RH, Cui Y, Morgan S, Burger A, Mandal KC, Noblitt CC, Speakman SA, Rademaker K, Payne SA. Tb3+ -doped K Pb2 Br5: Low-energy phonon mid-infrared laser crystal Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1901815 |
0.439 |
|
| 2004 |
Mandal KC, Choi M, Noblitt C, David Rauh R. Progress in Producing Large Area Flexible Dye Sensitized Solar Cells Mrs Proceedings. 836. DOI: 10.1557/Proc-836-L1.2 |
0.308 |
|
| 2004 |
Rademaker K, Krupke WF, Page RH, Payne SA, Petermann K, Huber G, Yelisseyev AP, Isaenko LI, Roy UN, Burger A, Mandal KC, Nitsch K. Optical properties of Nd3+- and Tb3+-doped KPb 2Br5 and RbPb2Br5 with low nonradiative decay Journal of the Optical Society of America B: Optical Physics. 21: 2117-2129. DOI: 10.1364/Josab.21.002117 |
0.378 |
|
| 2004 |
Mandal KC, Noblitt C, Choi M, Rauh RD, Roy UN, Groza M, Burger A, Holcomb DE, Jellison GE. Crystal growth, characterization and testing of Cd 0.9Zn 0.1Te single crystals for radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 5540: 186-195. DOI: 10.1117/12.566936 |
0.414 |
|
| 2004 |
Ma R, Zhang H, Larson DJ, Mandal KC. Dynamics of melt-crystal interface and thermal stresses in rotational Bridgman crystal growth process Journal of Crystal Growth. 266: 216-223. DOI: 10.1016/J.Jcrysgro.2004.02.048 |
0.332 |
|
| 2002 |
Mandal KC, Smirnov A, Roy UN, Burger A. Thermally evaporated AgGaTe2 thin films for low-cost p-AgGaTe2/n-Si heterojunction solar cells Materials Research Society Symposium - Proceedings. 744: 131-136. DOI: 10.1557/Proc-744-M4.4 |
0.384 |
|
| 2002 |
Mandal KC, Smirnov A, Peramunage D, David Rauh R. Low-Cost, Large-Area Nanocrystalline TiO2 -Polymer Solar Cells on Flexible Plastics Mrs Proceedings. 737. DOI: 10.1557/Proc-737-F8.45 |
0.308 |
|
| 1998 |
Mandal KC, Klugerman M, Cirignano LJ, Moy LP, Shah KS, Squillante MR, Bhattacharyya RN. Growth, characterization and spectroscopic investigations of InI crystals for optical and radiation detector applications Materials Research Society Symposium - Proceedings. 487: 597-604. |
0.382 |
|
| 1994 |
Savadogo O, Mandal KC. Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2S3 Films Chemically Deposited with Silicotungstic Acid Journal of the Electrochemical Society. 141: 2871-2877. DOI: 10.1149/1.2059248 |
0.342 |
|
| 1993 |
Chazalviel JN, Dubin VM, Mandal KC, Ozanam F. Modulated infrared spectroscopy at the electrochemical interface Applied Spectroscopy. 47: 1411-1416. DOI: 10.1366/0003702934067658 |
0.303 |
|
| 1993 |
Savadogo O, Mandal KC. Low-cost technique for preparing n-Sb2S3/p-Si heterojunction solar cells Applied Physics Letters. 63: 228-230. DOI: 10.1063/1.110349 |
0.338 |
|
| 1992 |
Savadogo O, Mandal KC. Characterizations of Antimony Tri-Sulfide Chemically Deposited with Silicotungstic Acid Journal of the Electrochemical Society. 139: L16-L18. DOI: 10.1149/1.2069211 |
0.31 |
|
| 1992 |
Savadogo O, Mandal KC. Studies on new chemically deposited photoconducting antimony trisulphide thin films Solar Energy Materials and Solar Cells. 26: 117-136. DOI: 10.1016/0927-0248(92)90131-8 |
0.31 |
|
| 1992 |
Savadogo O, Mandal KC. Photoelectrochemical (PEC) solar cell properties of chemically deposited cadmium selenide thin films with heteropolyacids Materials Chemistry and Physics. 31: 301-309. DOI: 10.1016/0254-0584(92)90191-A |
0.333 |
|
| 1990 |
Mandal KC, Ozanam F, Chazalviel JN. In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge Applied Physics Letters. 57: 2788-2790. DOI: 10.1063/1.103788 |
0.334 |
|
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