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Ramon R. Collazo, Ph.D. - Publications

Affiliations: 
2002 North Carolina State University, Raleigh, NC 
Area:
Materials Science Engineering, Condensed Matter Physics
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207 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Bansal A, Hilse M, Huet B, Wang K, Kozhakhmetov A, Kim JH, Bachu S, Alem N, Collazo R, Robinson JA, Engel-Herbert R, Redwing JM. Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire. Acs Applied Materials & Interfaces. PMID 34748305 DOI: 10.1021/acsami.1c14591  0.326
2020 Guo Q, Kirste R, Reddy P, Mecouch W, Guan Y, Mita S, Washiyama S, Tweedie J, Sitar Z, Collazo R. Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding Japanese Journal of Applied Physics. 59: 91001. DOI: 10.35848/1347-4065/Abab44  0.603
2020 Reddy P, Khachariya D, Szymanski D, Breckenridge MH, Sarkar B, Pavlidis S, Collazo R, Sitar Z, Kohn E. Role of polarity in SiN on Al/GaN and the pathway to stable contacts Semiconductor Science and Technology. 35: 55007. DOI: 10.1088/1361-6641/Ab7775  0.531
2020 Amano H, Collazo R, Santi Cd, Einfeldt S, Funato M, Glaab J, Hagedorn S, Hirano A, Hirayama H, Ishii R, Kashima Y, Kawakami Y, Kirste R, Kneissl M, Martin RW, et al. The 2020 UV Emitter Roadmap Journal of Physics D. DOI: 10.1088/1361-6463/Aba64C  0.465
2020 Bagheri P, Reddy P, Kim JH, Rounds R, Sochacki T, Kirste R, Bockowski M, Collazo R, Sitar Z. Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN Applied Physics Letters. 117: 82101. DOI: 10.1063/5.0018824  0.528
2020 Khachariya D, Szymanski D, Sengupta R, Reddy P, Kohn E, Sitar Z, Collazo R, Pavlidis S. Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN Journal of Applied Physics. 128: 64501. DOI: 10.1063/5.0015140  0.596
2020 Baker JN, Bowes PC, Harris JS, Collazo R, Sitar Z, Irving DL. Complexes and compensation in degenerately donor doped GaN Applied Physics Letters. 117: 102109. DOI: 10.1063/5.0013988  0.551
2020 Vetter E, Biliroglu M, Seyitliyev D, Reddy P, Kirste R, Sitar Z, Collazo R, Gundogdu K, Sun D. Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures Applied Physics Letters. 117: 93502. DOI: 10.1063/5.0011009  0.548
2020 Bagheri P, Kirste R, Reddy P, Washiyama S, Mita S, Sarkar B, Collazo R, Sitar Z. The nature of the DX state in Ge-doped AlGaN Applied Physics Letters. 116: 222102. DOI: 10.1063/5.0008362  0.65
2020 Washiyama S, Guan Y, Mita S, Collazo R, Sitar Z. Recovery kinetics in high temperature annealed AlN heteroepitaxial films Journal of Applied Physics. 127: 115301. DOI: 10.1063/5.0002891  0.655
2020 Hayden Breckenridge M, Guo Q, Klump A, Sarkar B, Guan Y, Tweedie J, Kirste R, Mita S, Reddy P, Collazo R, Sitar Z. Shallow Si donor in ion-implanted homoepitaxial AlN Applied Physics Letters. 116: 172103. DOI: 10.1063/1.5144080  0.641
2020 Reddy P, Bryan Z, Bryan I, Kim JH, Washiyama S, Kirste R, Mita S, Tweedie J, Irving DL, Sitar Z, Collazo R. Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys Applied Physics Letters. 116: 032102. DOI: 10.1063/1.5140995  0.636
2020 Reddy P, Hayden Breckenridge M, Guo Q, Klump A, Khachariya D, Pavlidis S, Mecouch W, Mita S, Moody B, Tweedie J, Kirste R, Kohn E, Collazo R, Sitar Z. High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates Applied Physics Letters. 116: 081101. DOI: 10.1063/1.5138127  0.658
2020 Washiyama S, Reddy P, Sarkar B, Breckenridge MH, Guo Q, Bagheri P, Klump A, Kirste R, Tweedie J, Mita S, Sitar Z, Collazo R. The role of chemical potential in compensation control in Si:AlGaN Journal of Applied Physics. 127: 105702. DOI: 10.1063/1.5132953  0.676
2020 Klump A, Hoffmann MP, Kaess F, Tweedie J, Reddy P, Kirste R, Sitar Z, Collazo R. Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control Journal of Applied Physics. 127: 045702. DOI: 10.1063/1.5126004  0.555
2020 Yamamoto R, Takekawa N, Goto K, Nagashima T, Dalmau R, Schlesser R, Murakami H, Collazo R, Monemar B, Sitar Z, Kumagai Y. Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas Journal of Crystal Growth. 545: 125730. DOI: 10.1016/J.Jcrysgro.2020.125730  0.753
2020 Wang Y, Huynh K, Liao ME, Yu H, Bai T, Tweedie J, Breckenridge MH, Collazo R, Sitar Z, Bockowski M, Liu Y, Goorsky MS. Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates Physica Status Solidi (B). 257: 1900705. DOI: 10.1002/Pssb.201900705  0.54
2019 Guo Q, Kirste R, Mita S, Tweedie J, Reddy P, Washiyama S, Breckenridge MH, Collazo R, Sitar Z. The polarization field in Al-rich AlGaN multiple quantum wells Japanese Journal of Applied Physics. 58: SCCC10. DOI: 10.7567/1347-4065/Ab07A9  0.643
2019 Harris JS, Gaddy BE, Collazo R, Sitar Z, Irving DL. Oxygen and silicon point defects in Al0.65Ga0.35N Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.054604  0.527
2019 Guo Q, Kirste R, Mita S, Tweedie J, Reddy P, Moody B, Guan Y, Washiyama S, Klump A, Sitar Z, Collazo R. Design of AlGaN-based quantum structures for low threshold UVC lasers Journal of Applied Physics. 126: 223101. DOI: 10.1063/1.5125256  0.662
2019 Chichibu SF, Kojima K, Hazu K, Ishikawa Y, Furusawa K, Mita S, Collazo R, Sitar Z, Uedono A. In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film Applied Physics Letters. 115: 151903. DOI: 10.1063/1.5116900  0.688
2019 Alden D, Troha T, Kirste R, Mita S, Guo Q, Hoffmann A, Zgonik M, Collazo R, Sitar Z. Quasi-phase-matched second harmonic generation of UV light using AlN waveguides Applied Physics Letters. 114: 103504. DOI: 10.1063/1.5087058  0.642
2019 Houston Dycus J, Washiyama S, Eldred TB, Guan Y, Kirste R, Mita S, Sitar Z, Collazo R, LeBeau JM. The role of transient surface morphology on composition control in AlGaN layers and wells Applied Physics Letters. 114: 031602. DOI: 10.1063/1.5063933  0.688
2019 Bobea Graziano M, Bryan I, Bryan Z, Kirste R, Tweedie J, Collazo R, Sitar Z. Structural characteristics of m-plane AlN substrates and homoepitaxial films Journal of Crystal Growth. 507: 389-394. DOI: 10.1016/J.Jcrysgro.2018.07.012  0.604
2018 Gulyuk A, LaJeunesse DR, Collazo R, Ivanisevic A. Characterization of Pseudomonas Aeruginosa Films on Different Inorganic Surfaces Before and After UV Light Exposure. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 30122052 DOI: 10.1021/Acs.Langmuir.8B02079  0.339
2018 Snyder PJ, LaJeunesse DR, Reddy P, Kirste R, Collazo R, Ivanisevic A. Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films. Nanoscale. PMID 29888776 DOI: 10.1039/C8Nr03684E  0.387
2018 Dycus JH, Mirrielees KJ, Grimley ED, Kirste R, Mita S, Sitar Z, Collazo R, Irving D, LeBeau JM. Structure of Ultra-thin Native Oxides on III-Nitride Surfaces. Acs Applied Materials & Interfaces. PMID 29558103 DOI: 10.1021/Acsami.8B00845  0.651
2018 Kirste R, Guo Q, Dycus JH, Franke A, Mita S, Sarkar B, Reddy P, LeBeau JM, Collazo R, Sitar Z. 6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation Applied Physics Express. 11: 082101. DOI: 10.7567/Apex.11.082101  0.649
2018 Rounds R, Sarkar B, Klump A, Hartmann C, Nagashima T, Kirste R, Franke A, Bickermann M, Kumagai Y, Sitar Z, Collazo R. Thermal conductivity of single-crystalline AlN Applied Physics Express. 11: 071001. DOI: 10.7567/Apex.11.071001  0.521
2018 Rigler M, Troha T, Guo W, Kirste R, Bryan I, Collazo R, Sitar Z, Zgonik M. Second-Harmonic Generation of Blue Light in GaN Waveguides Applied Sciences. 8: 1218. DOI: 10.3390/App8081218  0.564
2018 Reddy P, Washiyama S, Mecouch W, Hernandez-Balderrama LH, Kaess F, Hayden Breckenridge M, Sarkar B, Haidet BB, Franke A, Kohn E, Collazo R, Sitar Z. Plasma enhanced chemical vapor deposition of SiO2and SiNxon AlGaN: Band offsets and interface studies as a function of Al composition Journal of Vacuum Science & Technology A. 36: 061101. DOI: 10.1116/1.5050501  0.556
2018 Klump A, Zhou C, Stevie FA, Collazo R, Sitar Z. Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 03F102. DOI: 10.1116/1.5013001  0.478
2018 Alden D, Harris J, Bryan Z, Baker J, Reddy P, Mita S, Callsen G, Hoffmann A, Irving D, Collazo R, Sitar Z. Point-Defect Nature of the Ultraviolet Absorption Band in AlN Physical Review Applied. 9. DOI: 10.1103/Physrevapplied.9.054036  0.627
2018 Rounds R, Sarkar B, Sochacki T, Bockowski M, Imanishi M, Mori Y, Kirste R, Collazo R, Sitar Z. Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes Journal of Applied Physics. 124: 105106. DOI: 10.1063/1.5047531  0.527
2018 Washiyama S, Reddy P, Kaess F, Kirste R, Mita S, Collazo R, Sitar Z. A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition Journal of Applied Physics. 124: 115304. DOI: 10.1063/1.5045058  0.66
2018 Rounds R, Sarkar B, Alden D, Guo Q, Klump A, Hartmann C, Nagashima T, Kirste R, Franke A, Bickermann M, Kumagai Y, Sitar Z, Collazo R. The influence of point defects on the thermal conductivity of AlN crystals Journal of Applied Physics. 123: 185107. DOI: 10.1063/1.5028141  0.522
2018 Harris JS, Baker JN, Gaddy BE, Bryan I, Bryan Z, Mirrielees KJ, Reddy P, Collazo R, Sitar Z, Irving DL. On compensation in Si-doped AlN Applied Physics Letters. 112: 152101. DOI: 10.1063/1.5022794  0.571
2018 Dhall R, Vigil-Fowler D, Houston Dycus J, Kirste R, Mita S, Sitar Z, Collazo R, LeBeau JM. Probing collective oscillation ofd-orbital electrons at the nanoscale Applied Physics Letters. 112: 061102. DOI: 10.1063/1.5012742  0.631
2018 Bryan I, Bryan Z, Washiyama S, Reddy P, Gaddy B, Sarkar B, Breckenridge MH, Guo Q, Bobea M, Tweedie J, Mita S, Irving D, Collazo R, Sitar Z. Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD Applied Physics Letters. 112: 062102. DOI: 10.1063/1.5011984  0.687
2018 Snyder PJ, Reddy P, Kirste R, LaJeunesse DR, Collazo R, Ivanisevic A. Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior Rsc Advances. 8: 36722-36730. DOI: 10.1039/C8Ra06836D  0.302
2017 Snyder PJ, Kirste R, Collazo R, Ivanisevic A. Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces. Small (Weinheim An Der Bergstrasse, Germany). PMID 28464526 DOI: 10.1002/Smll.201700481  0.335
2017 Haidet BB, Sarkar B, Reddy P, Bryan I, Bryan Z, Kirste R, Collazo R, Sitar Z. Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN Japanese Journal of Applied Physics. 56: 100302. DOI: 10.7567/Jjap.56.100302  0.529
2017 Sarkar B, Haidet BB, Reddy P, Kirste R, Collazo R, Sitar Z. Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment Applied Physics Express. 10: 071001. DOI: 10.7567/Apex.10.071001  0.564
2017 Reddy P, Washiyama S, Kaess F, Kirste R, Mita S, Collazo R, Sitar Z. Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN Journal of Applied Physics. 122: 245702. DOI: 10.1063/1.5002682  0.679
2017 Reddy P, Kaess F, Tweedie J, Kirste R, Mita S, Collazo R, Sitar Z. Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers Applied Physics Letters. 111: 152101. DOI: 10.1063/1.5000720  0.655
2017 Sarkar B, Mita S, Reddy P, Klump A, Kaess F, Tweedie J, Bryan I, Bryan Z, Kirste R, Kohn E, Collazo R, Sitar Z. High free carrier concentration in p-GaN grown on AlN substrates Applied Physics Letters. 111: 032109. DOI: 10.1063/1.4995239  0.684
2017 Shelton CT, Bryan I, Paisley EA, Sachet E, Ihlefeld JF, Lavrik N, Collazo R, Sitar Z, Maria J. Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy Apl Materials. 5: 096109. DOI: 10.1063/1.4993840  0.587
2017 Reddy P, Sarkar B, Kaess F, Gerhold M, Kohn E, Collazo R, Sitar Z. Defect-free Ni/GaN Schottky barrier behavior with high temperature stability Applied Physics Letters. 110: 011603. DOI: 10.1063/1.4973762  0.543
2017 Dycus JH, Mirrielees KJ, Grimley ED, Dhall R, Kirste R, Mita S, Sitar Z, Collazo R, Irving DL, LeBeau JM. Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS Microscopy and Microanalysis. 23: 1444-1445. DOI: 10.1017/S1431927617007887  0.609
2017 Sarkar B, Reddy P, Klump A, Kaess F, Rounds R, Kirste R, Mita S, Kohn E, Collazo R, Sitar Z. On Ni/Au Alloyed Contacts to Mg-Doped GaN Journal of Electronic Materials. 47: 305-311. DOI: 10.1007/S11664-017-5775-3  0.64
2017 Majkić A, Franke A, Kirste R, Schlesser R, Collazo R, Sitar Z, Zgonik M. Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals Physica Status Solidi (B). 254: 1700077. DOI: 10.1002/Pssb.201700077  0.481
2017 Lamprecht M, Jmerik VN, Collazo R, Sitar Z, Ivanov SV, Thonke K. Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN Physica Status Solidi (B). 254: 1600714. DOI: 10.1002/Pssb.201600714  0.539
2017 Thonke K, Lamprecht M, Collazo R, Sitar Z. Optical signatures of silicon and oxygen related DX centers in AlN Physica Status Solidi (a). 214: 1600749. DOI: 10.1002/Pssa.201600749  0.559
2017 Tsao JY, Chowdhury S, Hollis MA, Jena D, Johnson NM, Jones KA, Kaplar RJ, Rajan S, Van de Walle CG, Bellotti E, Chua CL, Collazo R, Coltrin ME, Cooper JA, Evans KR, et al. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Advanced Electronic Materials. 4: 1600501. DOI: 10.1002/Aelm.201600501  0.449
2016 Abate Y, Seidlitz D, Fali A, Gamage S, Babicheva VE, Yakovlev VS, Stockman MI, Collazo R, Alden DE, Dietz N. Nanoscopy of Phase Separation in InxGa1-xN Alloys. Acs Applied Materials & Interfaces. PMID 27533107 DOI: 10.1021/Acsami.6B06766  0.305
2016 Huang L, Li G, Gurarslan A, Yu Y, Kirste R, Guo W, Zhao J, Collazo R, Sitar Z, Parsons GN, Kudenov M, Cao L. Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers. Acs Nano. PMID 27483193 DOI: 10.1021/Acsnano.6B02195  0.507
2016 Bain LE, Kirste R, Johnson CA, Ghashghaei HT, Collazo R, Ivanisevic A. Neurotypic cell attachment and growth on III-nitride lateral polarity structures. Materials Science & Engineering. C, Materials For Biological Applications. 58: 1194-8. PMID 26478421 DOI: 10.1016/J.Msec.2015.09.084  0.376
2016 Troha T, Rigler M, Alden D, Bryan I, Guo W, Kirste R, Mita S, Gerhold MD, Collazo R, Sitar Z, Zgonik M. UV second harmonic generation in AlN waveguides with modal phase matching Optical Materials Express. 6: 2014. DOI: 10.1364/Ome.6.002014  0.652
2016 Seidlitz D, Fali A, Kankanamge ISM, Alden D, Collazo R, Hoffmann A, Dietz N, Abate Y. Infrared nanoscopy of In-rich InGaN epilayers(Conference Presentation) Proceedings of Spie. 9954: 995408. DOI: 10.1117/12.2238043  0.374
2016 Franke A, Hoffmann MP, Hernandez-Balderrama L, Kaess F, Bryan I, Washiyama S, Bobea M, Tweedie J, Kirste R, Gerhold M, Collazo R, Sitar Z. Strain engineered high reflectivity DBRs in the deep UV Proceedings of Spie. 9748. DOI: 10.1117/12.2211700  0.586
2016 Mohn S, Stolyarchuk N, Markurt T, Kirste R, Hoffmann MP, Collazo R, Courville A, Di Felice R, Sitar Z, Vennéguès P, Albrecht M. Polarity Control in Group-III Nitrides beyond Pragmatism Physical Review Applied. 5. DOI: 10.1103/Physrevapplied.5.054004  0.5
2016 Kaess F, Reddy P, Alden D, Klump A, Hernandez-Balderrama LH, Franke A, Kirste R, Hoffmann A, Collazo R, Sitar Z. The effect of illumination power density on carbon defect configuration in silicon doped GaN Journal of Applied Physics. 120: 235705. DOI: 10.1063/1.4972468  0.537
2016 Reddy P, Hoffmann MP, Kaess F, Bryan Z, Bryan I, Bobea M, Klump A, Tweedie J, Kirste R, Mita S, Gerhold M, Collazo R, Sitar Z. Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control Journal of Applied Physics. 120: 185704. DOI: 10.1063/1.4967397  0.639
2016 Franke A, Hoffmann MP, Kirste R, Bobea M, Tweedie J, Kaess F, Gerhold M, Collazo R, Sitar Z. High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers Journal of Applied Physics. 120: 135703. DOI: 10.1063/1.4963831  0.574
2016 Kaess F, Mita S, Xie J, Reddy P, Klump A, Hernandez-Balderrama LH, Washiyama S, Franke A, Kirste R, Hoffmann A, Collazo R, Sitar Z. Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition Journal of Applied Physics. 120: 105701. DOI: 10.1063/1.4962017  0.675
2016 Alden D, Guo W, Kirste R, Kaess F, Bryan I, Troha T, Bagal A, Reddy P, Hernandez-Balderrama LH, Franke A, Mita S, Chang C, Hoffmann A, Zgonik M, Collazo R, et al. Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications Applied Physics Letters. 108: 261106. DOI: 10.1063/1.4955033  0.682
2016 Lamprecht M, Grund C, Neuschl B, Thonke K, Bryan Z, Collazo R, Sitar Z. Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state Journal of Applied Physics. 119. DOI: 10.1063/1.4946828  0.532
2016 Reddy P, Washiyama S, Kaess F, Hayden Breckenridge M, Hernandez-Balderrama LH, Haidet BB, Alden D, Franke A, Sarkar B, Kohn E, Collazo R, Sitar Z. High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies Journal of Applied Physics. 119. DOI: 10.1063/1.4945775  0.573
2016 Bryan I, Bryan Z, Mita S, Rice A, Hussey L, Shelton C, Tweedie J, Maria J, Collazo R, Sitar Z. The role of surface kinetics on composition and quality of AlGaN Journal of Crystal Growth. 451: 65-71. DOI: 10.1016/J.Jcrysgro.2016.06.055  0.817
2016 Tojo S, Yamamoto R, Tanaka R, Thieu QT, Togashi R, Nagashima T, Kinoshita T, Dalmau R, Schlesser R, Murakami H, Collazo R, Koukitu A, Monemar B, Sitar Z, Kumagai Y. Influence of high-temperature processing on the surface properties of bulk AlN substrates Journal of Crystal Growth. 446: 33-38. DOI: 10.1016/J.Jcrysgro.2016.04.030  0.745
2016 Bryan I, Bryan Z, Mita S, Rice A, Tweedie J, Collazo R, Sitar Z. Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides Journal of Crystal Growth. 438: 81-89. DOI: 10.1016/J.Jcrysgro.2015.12.022  0.674
2016 Lamprecht M, Grund C, Bauer S, Collazo R, Sitar Z, Thonke K. Slow decay of a defect-related emission band at 2.05 eV in AlN: Signatures of oxygen-related DX states Physica Status Solidi (B). 254: 1600338. DOI: 10.1002/Pssb.201600338  0.521
2015 Rigler M, Buh J, Hoffmann MP, Kirste R, Bobea M, Mita S, Gerhold MD, Collazo R, Sitar Z, Zgonik M. Optical characterization of Al- and N-polar AlN waveguides for integrated optics Applied Physics Express. 8. DOI: 10.7567/Apex.8.042603  0.68
2015 Losego MD, Paisley EA, Craft HS, Lam PG, Sachet E, Mita S, Collazo R, Sitar Z, Maria JP. Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces Journal of Materials Research. DOI: 10.1557/Jmr.2015.332  0.678
2015 Majkić A, Puc U, Franke A, Kirste R, Collazo R, Sitar Z, Zgonik M. Optical properties of aluminum nitride single crystals in the THz region Optical Materials Express. 5: 2106-2111. DOI: 10.1364/Ome.5.002106  0.517
2015 Reddy P, Bryan I, Bryan Z, Tweedie J, Washiyama S, Kirste R, Mita S, Collazo R, Sitar Z. Charge neutrality levels, barrier heights, and band offsets at polar AlGaN Applied Physics Letters. 107. DOI: 10.1063/1.4930026  0.696
2015 Haidet BB, Bryan I, Reddy P, Bryan Z, Collazo R, Sitar Z. A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN Journal of Applied Physics. 117. DOI: 10.1063/1.4923062  0.579
2015 Bryan Z, Bryan I, Mita S, Tweedie J, Sitar Z, Collazo R. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4922385  0.685
2015 Bryan Z, Bryan I, Xie J, Mita S, Sitar Z, Collazo R. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4917540  0.684
2015 Guo W, Kirste R, Bryan Z, Bryan I, Gerhold M, Collazo R, Sitar Z. Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes Journal of Applied Physics. 117. DOI: 10.1063/1.4915903  0.526
2015 Guo W, Kirste R, Bryan I, Bryan Z, Hussey L, Reddy P, Tweedie J, Collazo R, Sitar Z. KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode Applied Physics Letters. 106. DOI: 10.1063/1.4913705  0.79
2014 Bain LE, Collazo R, Hsu SH, Latham NP, Manfra MJ, Ivanisevic A. Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors. Acta Biomaterialia. 10: 2455-62. PMID 24590161 DOI: 10.1016/J.Actbio.2014.02.038  0.311
2014 Hoffmann MP, Tweedie J, Kirste R, Bryan Z, Bryan I, Gerhold M, Sitar Z, Collazo R. Point defect management in GaN by Fermi-level control during growth Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2041018  0.554
2014 Callsen G, Wagner MR, Reparaz JS, Nippert F, Kure T, Kalinowski S, Hoffmann A, Ford MJ, Phillips MR, Dalmau RF, Schlesser R, Collazo R, Sitar Z. Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.205206  0.704
2014 Bryan Z, Bryan I, Gaddy BE, Reddy P, Hussey L, Bobea M, Guo W, Hoffmann M, Kirste R, Tweedie J, Gerhold M, Irving DL, Sitar Z, Collazo R. Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Applied Physics Letters. 105. DOI: 10.1063/1.4903058  0.796
2014 Reddy P, Bryan I, Bryan Z, Tweedie J, Kirste R, Collazo R, Sitar Z. Schottky contact formation on polar and non-polar AlN Journal of Applied Physics. 116. DOI: 10.1063/1.4901954  0.561
2014 Bryan I, Bryan Z, Bobea M, Hussey L, Kirste R, Collazo R, Sitar Z. Homoepitaxial AlN thin films deposited on m-plane (1100) AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4897233  0.806
2014 Reddy P, Bryan I, Bryan Z, Guo W, Hussey L, Collazo R, Sitar Z. The effect of polarity and surface states on the Fermi level at III-nitride surfaces Journal of Applied Physics. 116. DOI: 10.1063/1.4896377  0.786
2014 Gaddy BE, Bryan Z, Bryan I, Xie J, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Kirste R, Sitar Z, Collazo R, Irving DL. The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN Applied Physics Letters. 104. DOI: 10.1063/1.4878657  0.72
2014 Bryan Z, Bryan I, Bobea M, Hussey L, Kirste R, Sitar Z, Collazo R. Exciton transitions and oxygen as a donor in m -plane AlN homoepitaxial films Journal of Applied Physics. 115. DOI: 10.1063/1.4870284  0.784
2014 Guo W, Bryan Z, Xie J, Kirste R, Mita S, Bryan I, Hussey L, Bobea M, Haidet B, Gerhold M, Collazo R, Sitar Z. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates Journal of Applied Physics. 115: 103108. DOI: 10.1063/1.4868678  0.807
2014 Shelton CT, Sachet E, Paisley EA, Hoffmann MP, Rajan J, Collazo R, Sitar Z, Maria JP. Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures Journal of Applied Physics. 115. DOI: 10.1063/1.4863120  0.574
2014 Hussey L, White RM, Kirste R, Mita S, Bryan I, Guo W, Osterman K, Haidet B, Bryan Z, Bobea M, Collazo R, Sitar Z. Sapphire decomposition and inversion domains in N-polar aluminum nitride Applied Physics Letters. 104. DOI: 10.1063/1.4862982  0.802
2014 Paisley EA, Gaddy BE, Lebeau JM, Shelton CT, Biegalski MD, Christen HM, Losego MD, Mita S, Collazo R, Sitar Z, Irving DL, Maria JP. Smooth cubic commensurate oxides on gallium nitride Journal of Applied Physics. 115. DOI: 10.1063/1.4861172  0.697
2014 Hussey L, Bryan I, Kirste R, Guo W, Bryan Z, Mita S, Collazo R, Sitar Z. Direct observation of the polarity control mechanism in aluminum nitride grown on sapphire by aberration corrected scanning transmission electron microscopy Microscopy and Microanalysis. 20: 162-163. DOI: 10.1017/S1431927614002530  0.796
2014 Sochacki T, Bryan Z, Amilusik M, Bobea M, Fijalkowski M, Bryan I, Lucznik B, Collazo R, Weyher JL, Kucharski R, Grzegory I, Bockowski M, Sitar Z. HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties Journal of Crystal Growth. 394: 55-60. DOI: 10.1016/J.Jcrysgro.2014.02.020  0.614
2014 Kuittinen T, Tuomisto F, Kumagai Y, Nagashima T, Kinoshita T, Koukitu A, Collazo R, Sitar Z. Vacancy defects in UV-transparent HVPE-AlN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 405-407. DOI: 10.1002/Pssc.201300529  0.584
2014 Bryan I, Akouala CR, Tweedie J, Bryan Z, Rice A, Kirste R, Collazo R, Sitar Z. Surface preparation of non-polar single-crystalline AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 454-457. DOI: 10.1002/Pssc.201300401  0.547
2014 Kirste R, Mita S, Hoffmann MP, Hussey L, Guo W, Bryan I, Bryan Z, Tweedie J, Gerhold M, Hoffmann A, Collazo R, Sitar Z. Properties of AlN based lateral polarity structures Physica Status Solidi (C). 11: 261-264. DOI: 10.1002/Pssc.201300287  0.817
2014 Hoffmann MP, Kirste R, Mita S, Guo W, Tweedie J, Bobea M, Bryan I, Bryan Z, Gerhold M, Collazo R, Sitar Z. Growth and characterization of Al x Ga1−x N lateral polarity structures Physica Status Solidi (a). 212: 1039-1042. DOI: 10.1002/Pssa.201431740  0.665
2013 Makowski MS, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. 103, 013701 (2013)]. Applied Physics Letters. 103: 89902. PMID 24046484 DOI: 10.1063/1.4819200  0.477
2013 Makowski MS, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Kinase detection with gallium nitride based high electron mobility transistors. Applied Physics Letters. 103: 13701. PMID 23918992 DOI: 10.1063/1.4812987  0.466
2013 Foster CM, Collazo R, Sitar Z, Ivanisevic A. Cell behavior on gallium nitride surfaces: peptide affinity attachment versus covalent functionalization. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 8377-84. PMID 23745578 DOI: 10.1021/La401503B  0.486
2013 Makowski MS, Kim S, Gaillard M, Janes D, Manfra MJ, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications. Applied Physics Letters. 102: 74102. PMID 23509411 DOI: 10.1063/1.4791788  0.471
2013 Foster CM, Collazo R, Sitar Z, Ivanisevic A. Aqueous stability of Ga- and N-polar gallium nitride. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 216-20. PMID 23227805 DOI: 10.1021/La304039N  0.543
2013 Sochacki T, Bryan Z, Amilusik M, Collazo R, Lucznik B, Weyher JL, Nowak G, Sadovyi B, Kamler G, Kucharski R, Zajac M, Doradzinski R, Dwilinski R, Grzegory I, Bockowski M, et al. Preparation of free-standing gan substrates from thick gan layers crystallized by hydride vapor phase epitaxy on ammonothermally grown GaN seeds Applied Physics Express. 6. DOI: 10.7567/Apex.6.075504  0.574
2013 Hoffmann MP, Gerhold M, Kirste R, Rice A, Akouala C, Xie JQ, Mita S, Collazo R, Sitar Z. Fabrication and characterization of lateral polar GaN structures for second harmonic generation Proceedings of Spie. 8631. DOI: 10.1117/12.2008827  0.72
2013 Kirste R, Hoffmann MP, Sachet E, Bobea M, Bryan Z, Bryan I, Nenstiel C, Hoffmann A, Maria JP, Collazo R, Sitar Z. Ge doped GaN with controllable high carrier concentration for plasmonic applications Applied Physics Letters. 103. DOI: 10.1063/1.4848555  0.56
2013 Paisley EA, Craft HS, Losego MD, Lu H, Gruverman A, Collazo R, Sitar Z, Maria J. Publisher's Note: “Epitaxial lead zirconate titanate on gallium nitride” [J. Appl. Phys. 113, 074107 (2013)] Journal of Applied Physics. 114: 239901. DOI: 10.1063/1.4842135  0.445
2013 Gaddy BE, Bryan Z, Bryan I, Kirste R, Xie J, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Sitar Z, Collazo R, Irving DL. Vacancy compensation and related donor-acceptor pair recombination in bulk AlN Applied Physics Letters. 103. DOI: 10.1063/1.4824731  0.722
2013 Chichibu SF, Hazu K, Ishikawa Y, Tashiro M, Ohtomo T, Furusawa K, Uedono A, Mita S, Xie J, Collazo R, Sitar Z. Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements Applied Physics Letters. 103: 142103. DOI: 10.1063/1.4823826  0.685
2013 Neuschl B, Thonke K, Feneberg M, Goldhahn R, Wunderer T, Yang Z, Johnson NM, Xie J, Mita S, Rice A, Collazo R, Sitar Z. Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions Applied Physics Letters. 103. DOI: 10.1063/1.4821183  0.661
2013 Kirste R, Mita S, Hussey L, Hoffmann MP, Guo W, Bryan I, Bryan Z, Tweedie J, Xie J, Gerhold M, Collazo R, Sitar Z. Polarity control and growth of lateral polarity structures in AlN Applied Physics Letters. 102: 181913. DOI: 10.1063/1.4804575  0.815
2013 Xie J, Mita S, Bryan Z, Guo W, Hussey L, Moody B, Schlesser R, Kirste R, Gerhold M, Collazo R, Sitar Z. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4803689  0.791
2013 Rigler M, Zgonik M, Hoffmann MP, Kirste R, Bobea M, Collazo R, Sitar Z, Mita S, Gerhold M. Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4800554  0.672
2013 Bobea M, Tweedie J, Bryan I, Bryan Z, Rice A, Dalmau R, Xie J, Collazo R, Sitar Z. X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN Journal of Applied Physics. 113. DOI: 10.1063/1.4798352  0.718
2013 Kirste R, Hoffmann MP, Tweedie J, Bryan Z, Callsen G, Kure T, Nenstiel C, Wagner MR, Collazo R, Hoffmann A, Sitar Z. Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements Journal of Applied Physics. 113: 103504. DOI: 10.1063/1.4794094  0.561
2013 Bryan I, Rice A, Hussey L, Bryan Z, Bobea M, Mita S, Xie J, Kirste R, Collazo R, Sitar Z. Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4792694  0.801
2013 Paisley EA, Craft HS, Losego MD, Lu H, Gruverman A, Collazo R, Sitar Z, Maria JP. Epitaxial PbxZr1-xTiO3 on GaN Journal of Applied Physics. 113. DOI: 10.1063/1.4792599  0.603
2013 Guo W, Xie J, Akouala C, Mita S, Rice A, Tweedie J, Bryan I, Collazo R, Sitar Z. Comparative study of etching high crystalline quality AlN and GaN Journal of Crystal Growth. 366: 20-25. DOI: 10.1016/J.Jcrysgro.2012.12.141  0.687
2012 Railsback JG, Singh A, Pearce RC, McKnight TE, Collazo R, Sitar Z, Yingling YG, Melechko AV. Weakly charged cationic nanoparticles induce DNA bending and strand separation. Advanced Materials (Deerfield Beach, Fla.). 24: 4261-5. PMID 22711427 DOI: 10.1002/Adma.201104891  0.436
2012 Raghothamachar B, Dalmau R, Moody B, Craft S, Schlesser R, Xie J, Collazo R, Dudley M, Sitar Z. Low defect density bulk AlN substrates for high performance electronics and optoelectronics Materials Science Forum. 717: 1287-1290. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.1287  0.733
2012 Nagashima T, Kubota Y, Kinoshita T, Kumagai Y, Xie J, Collazo R, Murakami H, Okamoto H, Koukitu A, Sitar Z. Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport Applied Physics Express. 5: 125501. DOI: 10.1143/Apex.5.125501  0.559
2012 Callsen G, Wagner MR, Kure T, Reparaz JS, Bügler M, Brunnmeier J, Nenstiel C, Hoffmann A, Hoffmann M, Tweedie J, Bryan Z, Aygun S, Kirste R, Collazo R, Sitar Z. Optical signature of Mg-doped GaN: Transfer processes Physical Review B. 86. DOI: 10.1103/Physrevb.86.075207  0.539
2012 Hussey L, Mita S, Xie J, Guo W, Akouala CR, Rajan J, Bryan I, Collazo R, Sitar Z. Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition Journal of Applied Physics. 112. DOI: 10.1063/1.4768526  0.823
2012 Paisley EA, Shelton TC, Mita S, Collazo R, Christen HM, Sitar Z, Biegalski MD, Maria JP. Surfactant assisted growth of MgO films on GaN Applied Physics Letters. 101. DOI: 10.1063/1.4748886  0.7
2012 Collazo R, Xie J, Gaddy BE, Bryan Z, Kirste R, Hoffmann M, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Irving DL, Sitar Z. On the origin of the 265 nm absorption band in AlN bulk crystals Applied Physics Letters. 100. DOI: 10.1063/1.4717623  0.726
2012 Bryan Z, Hoffmann M, Tweedie J, Kirste R, Callsen G, Bryan I, Rice A, Bobea M, Mita S, Xie J, Sitar Z, Collazo R. Fermi Level Control of Point Defects During Growth of Mg-Doped GaN Journal of Electronic Materials. 42: 815-819. DOI: 10.1007/S11664-012-2342-9  0.672
2012 Tweedie J, Collazo R, Rice A, Mita S, Xie J, Akouala RC, Sitar Z. Schottky barrier and interface chemistry for Ni contacted to Al 0.8Ga 0.2N grown on c-oriented AlN single crystal substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 584-587. DOI: 10.1002/Pssc.201100435  0.694
2012 Neuschl B, Thonke K, Feneberg M, Mita S, Xie J, Dalmau R, Collazo R, Sitar Z. Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN Physica Status Solidi (B). 249: 511-515. DOI: 10.1002/Pssb.201100381  0.788
2012 Railsback JG, Singh A, Pearce RC, McKnight TE, Collazo R, Sitar Z, Yingling YG, Melechko AV. Gold Nanoparticles: Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation (Adv. Mater. 31/2012) Advanced Materials. 24: 4221-4221. DOI: 10.1002/Adma.201290188  0.423
2011 Paisley EA, Losego MD, Gaddy BE, Tweedie JS, Collazo R, Sitar Z, Irving DL, Maria JP. Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions. Nature Communications. 2: 461. PMID 21897372 DOI: 10.1038/Ncomms1470  0.57
2011 Dalmau R, Moody B, Schlesser R, Mita S, Xie J, Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Tweedie J, Sitar Z. Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates Journal of the Electrochemical Society. 158: H530-H535. DOI: 10.1149/1.3560527  0.787
2011 Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. Fermi level effect on strain of Si-doped GaN Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.878726  0.676
2011 Acharya AR, Buegler M, Atalay R, Dietz N, Thoms BD, Tweedie JS, Collazo R. Observation of NH2 species on tilted InN (01 1̄ 1) facets Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3596619  0.39
2011 Kirste R, Collazo R, Callsen G, Wagner MR, Kure T, Sebastian Reparaz J, Mita S, Xie J, Rice A, Tweedie J, Sitar Z, Hoffmann A. Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN Journal of Applied Physics. 110: 093503. DOI: 10.1063/1.3656987  0.593
2011 Xie J, Mita S, Hussey L, Rice A, Tweedie J, Lebeau J, Collazo R, Sitar Z. On the strain in n-type GaN Applied Physics Letters. 99. DOI: 10.1063/1.3647772  0.808
2011 Xie J, Mita S, Rice A, Tweedie J, Hussey L, Collazo R, Sitar Z. Strain in Si doped GaN and the Fermi level effect Applied Physics Letters. 98. DOI: 10.1063/1.3589978  0.799
2011 Craft HS, Rice AL, Collazo R, Sitar Z, Maria JP. Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN Applied Physics Letters. 98. DOI: 10.1063/1.3554762  0.589
2011 Buegler M, Gamage S, Atalay R, Wang J, Senevirathna MKI, Kirste R, Xu T, Jamil M, Ferguson I, Tweedie J, Collazo R, Hoffmann A, Sitar Z, Dietz N. Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2059-2062. DOI: 10.1002/Pssc.201001067  0.54
2011 Mita S, Collazo R, Rice A, Tweedie J, Xie J, Dalmau R, Sitar Z. Impact of gallium supersaturation on the growth of N-polar GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2078-2080. DOI: 10.1002/Pssc.201001063  0.795
2011 Xie J, Mia S, Dalmau R, Collazo R, Rice A, Tweedie J, Sitar Z. Ni/Au Schottky diodes on AlxGa1-xN (0.7<x<1) grown on AlN single crystal substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2407-2409. DOI: 10.1002/Pssc.201001009  0.75
2011 Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Progress on n-type doping of algan alloys on aln single crystal substrates for uv optoelectronic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2031-2033. DOI: 10.1002/Pssc.201000964  0.797
2011 Dalmau R, Moody B, Xie J, Collazo R, Sitar Z. Characterization of dislocation arrays in AlN single crystals grown by PVT Physica Status Solidi (a) Applications and Materials Science. 208: 1545-1547. DOI: 10.1002/Pssa.201000957  0.744
2011 Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Sitar Z, Dalmau R, Xie J, Mita S, Goldhahn R. Sharp bound and free exciton lines from homoepitaxial AlN Physica Status Solidi (a). 208: 1520-1522. DOI: 10.1002/Pssa.201000947  0.764
2010 Losego MD, Craft HS, Paisley EA, Mita S, Collazo R, Sitar Z, Maria JP. Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux Journal of Materials Research. 25: 670-679. DOI: 10.1557/Jmr.2010.0096  0.68
2010 Buegler M, Gamage S, Atalay R, Wang J, Senevirathna I, Kirste R, Xu T, Jamil M, Ferguson I, Tweedie J, Collazo R, Hoffmann A, Sitar Z, Dietz N. Reactor pressure - Growth temperature relation for InN epilayers grown by high-pressure CVD Proceedings of Spie - the International Society For Optical Engineering. 7784. DOI: 10.1117/12.860952  0.525
2010 Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. The effect of N-polar GaN domains as Ohmic contacts Applied Physics Letters. 97. DOI: 10.1063/1.3491173  0.702
2010 Rice A, Collazo R, Tweedie J, Dalmau R, Mita S, Xie J, Sitar Z. Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 108. DOI: 10.1063/1.3467522  0.795
2010 Tweedie J, Collazo R, Rice A, Xie J, Mita S, Dalmau R, Sitar Z. X-ray characterization of composition and relaxation of Alx Ga1-xN (0<x<1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3457149  0.781
2010 Rice A, Collazo R, Tweedie J, Xie J, Mita S, Sitar Z. Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0≤x≤1) deposition by LP OMVPE Journal of Crystal Growth. 312: 1321-1324. DOI: 10.1016/J.Jcrysgro.2009.09.011  0.661
2010 Kirste R, Wagner MR, Schulze JH, Strittmatter A, Collazo R, Sitar Z, Alevli M, Dietz N, Hoffmann A. Optical properties of InN grown on templates with controlled surface polarities Physica Status Solidi (a) Applications and Materials Science. 207: 2351-2354. DOI: 10.1002/Pssa.201026086  0.616
2010 Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity Physica Status Solidi (a) Applications and Materials Science. 207: 45-48. DOI: 10.1002/Pssa.200982629  0.788
2009 Lu P, Collazo R, Dalmau RF, Durkaya G, Dietz N, Raghothamachar B, Dudley M, Sitar Z. Seeded growth of AlN bulk crystals in m- and c-orientation Journal of Crystal Growth. 312: 58-63. DOI: 10.1016/J.Jcrysgro.2009.10.008  0.728
2009 Mita S, Collazo R, Sitar Z. Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition Journal of Crystal Growth. 311: 3044-3048. DOI: 10.1016/J.Jcrysgro.2009.01.075  0.693
2009 Losego MD, Fitting Kourkoutis L, Mita S, Craft HS, Muller DA, Collazo R, Sitar Z, Maria JP. Epitaxial Ba0.5Sr0.5TiO3-GaN heterostructures with abrupt interfaces Journal of Crystal Growth. 311: 1106-1109. DOI: 10.1016/J.Jcrysgro.2008.11.085  0.706
2008 Craft HS, Collazo R, Losego MD, Sitar Z, Maria JP. Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1507-1510. DOI: 10.1116/1.3000058  0.534
2008 Lu P, Collazo R, Dalmau RF, Durkaya G, Dietz N, Sitar Z. Different optical absorption edges in AlN bulk crystals grown in m- and c -orientations Applied Physics Letters. 93. DOI: 10.1063/1.2996413  0.728
2008 Mita S, Collazo R, Rice A, Dalmau RF, Sitar Z. Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.2952027  0.779
2008 Craft HS, Collazo R, Losego MD, Mita S, Sitar Z, Maria JP. Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface Applied Physics Letters. 92. DOI: 10.1063/1.2887878  0.684
2008 Dietz N, Alevli M, Atalay R, Durkaya G, Collazo R, Tweedie J, Mita S, Sitar Z. The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition Applied Physics Letters. 92. DOI: 10.1063/1.2840192  0.708
2008 Liu F, Collazo R, Mita S, Duscher G, Pennycook S. Erratum: “The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence” [Appl. Phys. Lett. 91, 203115 (2007)] Applied Physics Letters. 92: 029901. DOI: 10.1063/1.2836941  0.564
2008 Losego MD, Mita S, Collazo R, Sitar Z, Maria JP. Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces Journal of Crystal Growth. 310: 51-56. DOI: 10.1016/J.Jcrysgro.2007.10.002  0.688
2008 Ihlefeld JF, Losego MD, Collazo R, Borland WJ, Maria JP. Defect chemistry of nano-grained barium titanate films Journal of Materials Science. 43: 38-42. DOI: 10.1007/S10853-007-2135-3  0.377
2008 Collazo R, Mita S, Rice A, Dalmau R, Wellenius P, Muth J, Sitar Z. Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1977-1979. DOI: 10.1002/Pssc.200778624  0.794
2008 Liu F, Collazo R, Mita S, Sitar Z, Pennycook SJ, Duscher G. Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution Advanced Materials. 20: 2162-2165. DOI: 10.1002/Adma.200702522  0.675
2008 Liu F, Collazo R, Mita S, Sitar Z, Duscher G. Three-dimensional geometry of nanometer-scale AIN pits: A new template for quantum dots? Advanced Materials. 20: 134-137. DOI: 10.1002/Adma.200701288  0.646
2007 Li X, Collazo R, Sitar Z. Highly oriented diamond films grown at high growth rate Materials Research Society Symposium Proceedings. 956: 171-176. DOI: 10.1557/Proc-0956-J09-39  0.674
2007 Losego MD, Mita S, Collazo R, Sitar Z, Maria JP. Epitaxial calcium oxide films deposited on gallium nitride surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1029-1032. DOI: 10.1116/1.2710243  0.676
2007 Collazo R, Mita S, Rice A, Dalmau RF, Sitar Z. Simultaneous growth of a GaN pn lateral polarity junction by polar selective doping Applied Physics Letters. 91. DOI: 10.1063/1.2816893  0.796
2007 Liu F, Collazo R, Mita S, Sitar Z, Duscher G, Pennycook SJ. The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence Applied Physics Letters. 91. DOI: 10.1063/1.2815748  0.699
2007 Craft HS, Collazo R, Losego MD, Mita S, Sitar Z, Maria JP. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy Journal of Applied Physics. 102. DOI: 10.1063/1.2785022  0.685
2007 Dalmau R, Collazo R, Mita S, Sitar Z. X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution Journal of Electronic Materials. 36: 414-419. DOI: 10.1007/S11664-006-0044-X  0.771
2007 Collazo R, Mita S, Dalmau R, Sitar Z. Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2597-2600. DOI: 10.1002/Pssc.200674874  0.801
2007 Mita S, Collazo R, Dalmau R, Sitar Z. Growth of highly resistive Ga-polar GaN by LP-MOVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2260-2263. DOI: 10.1002/Pssc.200674837  0.802
2006 Herro ZG, Zhuang D, Schlesser R, Collazo R, Sitar Z. Growth of large AlN single crystals along the [0001] direction Materials Research Society Symposium Proceedings. 892: 499-504. DOI: 10.1557/Proc-0892-Ff21-01  0.568
2006 Craft HS, Collazo R, Sitar Z, Maria JP. Molecular beam epitaxy of Sm 2O 3, Dy 2O 3, and Ho 2O 3 on Si (111) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2105-2110. DOI: 10.1116/1.2216721  0.56
2006 Aleksov A, Collazo R, Mita S, Schlesser R, Sitar Z. Current-voltage characteristics of n∕n lateral polarity junctions in GaN Applied Physics Letters. 89: 052117. DOI: 10.1063/1.2244046  0.694
2006 Craft HS, Ihlefeld JF, Losego MD, Collazo R, Sitar Z, Maria JP. MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy Applied Physics Letters. 88. DOI: 10.1063/1.2201041  0.601
2006 Collazo R, Mita S, Aleksov A, Schlesser R, Sitar Z. Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers Journal of Crystal Growth. 287: 586-590. DOI: 10.1016/J.Jcrysgro.2005.10.080  0.705
2006 Herro ZG, Zhuang D, Schlesser R, Collazo R, Sitar Z. Seeded growth of AlN on N- and Al-polar 〈0001〉 AlN seeds by physical vapor transport Journal of Crystal Growth. 286: 205-208. DOI: 10.1016/J.Jcrysgro.2005.10.074  0.566
2006 Li X, Perkins J, Collazo R, Nemanich RJ, Sitar Z. Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD Diamond and Related Materials. 15: 1784-1788. DOI: 10.1016/J.Diamond.2006.09.008  0.653
2006 Govindaraju N, Aleksov A, Li X, Okuzumi F, Wolter SD, Collazo R, Prater JT, Sitar Z. Comparative study of textured diamond films by thermal conductivity measurements Applied Physics a: Materials Science and Processing. 85: 331-335. DOI: 10.1007/S00339-006-3697-7  0.721
2005 Mita S, Collazo R, Schlesser R, Sitar Z. Polarity control of GaN films grown by metal organic chemical vapor deposition on (0001) sapphire substrates Materials Research Society Symposium Proceedings. 831: 167-172. DOI: 10.1557/Proc-831-E3.20  0.712
2005 Berkman E, Collazo R, Schiesser R, Sitar Z. Growth of GaN from elemental gallium and ammonia via modified sandwich growth technique Materials Research Society Symposium Proceedings. 831: 727-732. DOI: 10.1557/Proc-831-E11.38  0.691
2005 Mita S, Collazo R, Schlesser R, Sitar Z. Polarity Control of LP-MOVPE GaN using N 2 the Carrier Gas Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff27-06  0.653
2005 Schlesser R, Dalmau R, Zhuang D, Collazo R, Sitar Z. Crucible materials for growth of aluminum nitride crystals Journal of Crystal Growth. 281: 75-80. DOI: 10.1016/J.Jcrysgro.2005.03.014  0.723
2005 Collazo R, Mita S, Schiesser R, Sitar Z. Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy Physica Status Solidi C: Conferences. 2: 2117-2120. DOI: 10.1002/Pssc.200461546  0.712
2004 Li H, Chandrasekaran H, Sunkara MK, Collazo R, Sitar Z, Stukowski M, Rajan K. Self-oriented Growth of GaN Films on Molten Gallium Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.34  0.577
2004 Collazo R, Schlesser R, Sitar Z. High field transport in AlN International Journal of High Speed Electronics and Systems. 14: 155-174. DOI: 10.1142/S0129156404002284  0.534
2004 Brenner DW, Schlesser R, Sitar Z, Dalmau R, Collazo R, Li Y. Model for the influence of boron impurities on the morphology of AlN grown by physical vapor transport Surface Science. 560. DOI: 10.1016/J.Susc.2004.05.003  0.723
2003 Yushin GN, Wolter SD, Kvit AV, Collazo R, Prater JT, Sitar Z. Transmission electron miscroscopy study of the fused silicon/diamond interface Materials Research Society Symposium - Proceedings. 768: 39-44. DOI: 10.1557/Proc-768-G2.9  0.689
2003 Chang CS, Chattopadhyay S, Chen LC, Chen KH, Chen CW, Chen YF, Collazo R, Sitar Z. Band-gap dependence of field emission from one-dimensional nanostructures grown onn-type andp-type silicon substrates Physical Review B. 68. DOI: 10.1103/Physrevb.68.125322  0.56
2003 Collazo R, Schlesser R, Roskowski A, Miraglia P, Davis RF, Sitar Z. Electron energy distribution during high-field transport in AIN Journal of Applied Physics. 93: 2765-2771. DOI: 10.1063/1.1543633  0.532
2003 Wolter SD, Borca-Tasciuc DA, Chen G, Govindaraju N, Collazo R, Okuzumi F, Prater JT, Sitar Z. Thermal conductivity of epitaxially textured diamond films Diamond and Related Materials. 12: 61-64. DOI: 10.1016/S0925-9635(02)00248-0  0.716
2002 Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Observations of electron velocity overshoot during high-field transport in AlN Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L10.2  0.518
2002 Yushin GN, Kvit AV, Collazo R, Sitar Z. SiC to SiC wafer bonding Materials Research Society Symposium - Proceedings. 742: 91-95. DOI: 10.1557/Proc-742-K2.5  0.667
2002 Collazo R, Liang M, Schlesser R, Sitar Z. The role of adsorbates on the field emission properties of single-walled carbon nanotubes Materials Research Society Symposium - Proceedings. 706: 119-124. DOI: 10.1557/Proc-706-Z5.7.1  0.503
2002 Yushin GN, Wolter SD, Kvit AV, Collazo R, Prater JT, Stoner BR, Sitar Z. Wafer bonding of diamond films to silicon for silicon-on-insulator technology Materials Research Society Symposium - Proceedings. 686: 69-74. DOI: 10.1557/Proc-686-A2.6  0.678
2002 Collazo R, Schlesser R, Sitar Z. Experimental observation of electron velocity overshoot in AlN Applied Physics Letters. 81: 5189-5191. DOI: 10.1063/1.1534407  0.542
2002 Yushin GN, Wolter SD, Kvit AV, Collazo R, Stoner BR, Prater JT, Sitar Z. Study of fusion bonding of diamond to silicon for silicon-on-diamond technology Applied Physics Letters. 81: 3275-3277. DOI: 10.1063/1.1516636  0.682
2002 Collazo R, Schlesser R, Sitar Z. Role of adsorbates in field emission from nanotubes Diamond and Related Materials. 11: 769-773. DOI: 10.1016/S0925-9635(01)00585-4  0.502
2001 Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Electron transport in AlN under high electric fields Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I6.45.1  0.538
2001 Collazo R, Schlesser R, Sitar Z. Two field-emission states of single-walled carbon nanotubes Applied Physics Letters. 78: 2058-2060. DOI: 10.1063/1.1361089  0.497
2000 Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Hot Electron Transport in AlN Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G11.33  0.479
2000 Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Hot electron transport in AlN Journal of Applied Physics. 88: 5865-5869. DOI: 10.1063/1.1318386  0.523
2000 Schiesser R, Collazo R, Bower C, Zhou O, Sitar Z. Energy distribution of field emitted electrons from carbon nanotubes Diamond and Related Materials. 9: 1201-1204. DOI: 10.1016/S0925-9635(99)00277-0  0.539
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