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Enhai Zhao, Ph.D. - Publications

Affiliations: 
2006 Georgia Institute of Technology, Atlanta, GA 
Area:
Electronics and Electrical Engineering
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Cheng P, Zhao E, Cressler JD, Prasad J. On the mechanisms of low-frequency noise in vertical silicon pnp BJTs Proceedings of Spie - the International Society For Optical Engineering. 6600. DOI: 10.1117/12.724648  0.578
2006 Sutton AK, Prakash APG, Jun B, Zhao E, Bellini M, Pellish J, Diestelhorst RM, Carts MA, Phan A, Ladbury R, Cressler JD, Marshall PW, Marshall CJ, Reed RA, Schrimpf RD, et al. An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs Ieee Transactions On Nuclear Science. 53: 3166-3174. DOI: 10.1109/Tns.2006.885382  0.597
2006 Zhao E, Krithivasan R, Sutton A, Jin Z, Cressler J, El-Kareh B, Balster S, Yasuda H. Corrections to “An Investigation of Low-Frequency Noise in Complementary SiGe HBTs” Ieee Transactions On Electron Devices. 53: 1745-1745. DOI: 10.1109/Ted.2006.877207  0.634
2006 Zhao E, Krithivasan R, Sutton AK, Jin Z, Cressler JD, El-Kareh B, Balster S, Yasuda H. An investigation of low-frequency noise in complementary SiGe HBTs Ieee Transactions On Electron Devices. 53: 329-338. DOI: 10.1109/Ted.2005.862698  0.628
2006 Zhao E, Cressler JD, El-Diwany M, Krakowski TL, Sadovnikov A, Kocoski D. On the geometrical dependence of low-frequency noise in SiGe HBTs Solid-State Electronics. 50: 1748-1755. DOI: 10.1016/J.Sse.2006.09.018  0.603
2004 Zhao E, Sutton AK, Haugerud BM, Cressler JD, Marshall PW, Reed RA, El-Kareh B, Balster S, Yasuda H. The effects of radiation on 1/f noise in complementary (npn+pnp) SiGe HBTs Ieee Transactions On Nuclear Science. 51: 3243-3249. DOI: 10.1109/Tns.2004.839138  0.594
2004 Chen T, Kuo WML, Zhao E, Liang Q, Jin Z, Cressler JD, Joseph AJ. On the high-temperature (to 300 °C) characteristics of SiGe HBTs Ieee Transactions On Electron Devices. 51: 1825-1832. DOI: 10.1109/Ted.2004.836779  0.581
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