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Udayan Ganguly, Ph.D. - Publications

Affiliations: 
2006 Cornell University, Ithaca, NY, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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60 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Saraswat V, Prasad S, Khanna A, Wagh A, Bhat A, Panwar N, Lashkare S, Ganguly U. Reaction-Drift Model for Switching Transients in Pr₀.₇Ca₀.₃MnO₃-Based Resistive RAM Ieee Transactions On Electron Devices. 67: 3610-3617. DOI: 10.1109/Ted.2020.3011387  0.339
2020 Lashkare S, Subramoney S, Ganguly U. Nanoscale Side-Contact Enabled Three Terminal Pr 0.7 Ca 0.3 MnO 3 Resistive Random Access Memory for In-Memory Computing Ieee Electron Device Letters. 41: 1344-1347. DOI: 10.1109/Led.2020.3010858  0.416
2019 Vardhan PH, Amita, Ganguly S, Ganguly U. Threshold Voltage Variability in Nanosheet GAA Transistors Ieee Transactions On Electron Devices. 66: 4433-4438. DOI: 10.1109/Ted.2019.2933061  0.369
2019 Panwar N, Ganguly U. Temperature Effects in SET/RESET Voltage–Time Dilemma in Pr 0.7 Ca 0.3 MnO 3 -Based RRAM Ieee Transactions On Electron Devices. 66: 829-832. DOI: 10.1109/Ted.2018.2882447  0.309
2019 Khilwani D, Moghe V, Lashkare S, Saraswat V, Kumbhare P, Baghini MS, Jandhyala S, Subramoney S, Ganguly U. PrxCa1−xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem Apl Materials. 7: 91112. DOI: 10.1063/1.5108694  0.31
2019 Dutta S, Chavan T, Mohapatra NR, Ganguly U. Electrical Tunability of Partially Depleted Silicon on Insulator (PD-SOI) Neuron Solid-State Electronics. 160: 107623. DOI: 10.1016/J.Sse.2019.107623  0.324
2019 Vardhan PH, Ganguly S, Ganguly U. An accurate expression to estimate the metal gate granularity induced threshold voltage variability in NWFETs Solid-State Electronics. 152: 65-71. DOI: 10.1016/J.Sse.2018.12.003  0.346
2018 Das B, Schulze J, Ganguly U. Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode Ieee Transactions On Electron Devices. 65: 3414-3420. DOI: 10.1109/Ted.2018.2846360  0.309
2018 Kumbhare P, Ganguly U. Ionic Transport Barrier Tuning by Composition in Pr 1– x Ca x MnO 3 -Based Selector-Less RRAM and Its Effect on Memory Performance Ieee Transactions On Electron Devices. 65: 2479-2484. DOI: 10.1109/Ted.2018.2827420  0.372
2018 Lashkare S, Kumbhare P, Saraswat V, Ganguly U. Transient Joule Heating-Based Oscillator Neuron for Neuromorphic Computing Ieee Electron Device Letters. 39: 1437-1440. DOI: 10.1109/Led.2018.2854732  0.311
2018 Sadana S, Lele A, Tsundus S, Kumbhare P, Ganguly U. A Highly Reliable and Unbiased PUF Based on Differential OTP Memory Ieee Electron Device Letters. 39: 1159-1162. DOI: 10.1109/Led.2018.2844557  0.432
2018 Vardhan PH, Mittal S, Ganguly S, Ganguly U. Analytical modeling of metal gate granularity based threshold voltage variability in NWFET Solid-State Electronics. 147: 26-34. DOI: 10.1016/J.Sse.2018.05.007  0.345
2018 Babu AV, Lashkare S, Ganguly U, Rajendran B. Stochastic learning in deep neural networks based on nanoscale PCMO device characteristics Neurocomputing. 321: 227-236. DOI: 10.1016/J.Neucom.2018.09.019  0.319
2017 Dutta S, Kumar V, Shukla A, Mohapatra NR, Ganguly U. Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFET. Scientific Reports. 7: 8257. PMID 28811481 DOI: 10.1038/S41598-017-07418-Y  0.333
2017 Kumbhare P, Chakraborty I, Khanna A, Ganguly U. Memory Performance of a Simple Pr 0.7 Ca 0.3 MnO 3 -Based Selectorless RRAM Ieee Transactions On Electron Devices. 64: 3967-3970. DOI: 10.1109/Ted.2017.2725900  0.419
2017 Vardhan PH, Mittal S, Ganguly S, Ganguly U. Analytical Estimation of Threshold Voltage Variability by Metal Gate Granularity in FinFET Ieee Transactions On Electron Devices. 64: 3071-3076. DOI: 10.1109/Ted.2017.2712763  0.354
2017 Lashkare S, Panwar N, Kumbhare P, Das B, Ganguly U. PCMO-Based RRAM and NPN Bipolar Selector as Synapse for Energy Efficient STDP Ieee Electron Device Letters. 38: 1212-1215. DOI: 10.1109/Led.2017.2723503  0.32
2016 Das B, Sushama S, Schulze J, Ganguly U. Sub-0.2 V Impact Ionization in Si n-i-p-i-n Diode Ieee Transactions On Electron Devices. 63: 4668-4673. DOI: 10.1109/Ted.2016.2620986  0.351
2016 Kurude S, Mittal S, Ganguly U. Statistical Variability Analysis of SRAM Cell for Emerging Transistor Technologies Ieee Transactions On Electron Devices. 63: 3514-3520. DOI: 10.1109/Ted.2016.2590433  0.336
2016 Mittal S, Shekhawat AS, Ganguly U. An Analytical Model to Estimate FinFET's VT Distribution Due to Fin-Edge Roughness Ieee Transactions On Electron Devices. 63: 1352-1358. DOI: 10.1109/Ted.2016.2520954  0.3
2016 Kumbhare P, Chakraborty I, Singh AK, Chouhan S, Panwar N, Ganguly U. A selectorless RRAM with record memory window and nonlinearity based on trap filled limit mechanism 2015 15th Non-Volatile Memory Technology Symposium, Nvmts 2015. DOI: 10.1109/NVMTS.2015.7457491  0.327
2016 Kumbhare P, Chouhan S, Ganguly U. Pr1-xCaxMnO3 based selector, RRAM and self-selecting selectorless RRAM: A composition study Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548443  0.307
2015 Kumbhare P, Meihar P, Rajarathinam S, Chouhan S, Pai S, Panwar N, Ganguly U. A comprehensive study of effect of composition on resistive switching of HfxAl1-xOy based RRAM devices by combinatorial sputtering Materials Research Society Symposium Proceedings. 1729: 65-70. DOI: 10.1557/Opl.2015.82  0.396
2015 Mandapati R, Das B, Ostwal V, Ganguly U. Voltage Designability: An enabler for selector technology 2014 14th Annual Non-Volatile Memory Technology Symposium, Nvmts 2014. DOI: 10.1109/NVMTS.2014.7060863  0.309
2015 Mandapati R, Shrivastava S, Sushama S, Saha B, Schulze J, Ganguly U. Improved Off-Current and Modeling in Sub-430 °c Si p-i-n Selector for Unipolar Resistive Random Access Memory Ieee Electron Device Letters. 36: 1310-1313. DOI: 10.1109/Led.2015.2491221  0.354
2014 Mittal S, Gupta S, Nainani A, Abraham MC, Schuegraf K, Lodha S, Ganguly U. Epitaxially defined FinFET: Variability resistant and high-performance technology Ieee Transactions On Electron Devices. 61: 2711-2718. DOI: 10.1109/Ted.2014.2329993  0.319
2013 Nori R, Chandra Raju NR, Thomas N, Panwar N, Kumbhare P, Rao G, Srinivasan S, Venkataramani N, Ganguly U. Conducting oxide electrode to mitigate mechanical instability (bubble formation) during operation of La1-xSrxMnO3 (LSMO) based RRAM Materials Research Society Symposium Proceedings. 1507. DOI: 10.1557/Opl.2013.381  0.305
2013 Panwar N, Rao G, Chandra Raju NR, Nori R, Kumbhare P, Deshmukh S, Senthil Srinivasan VS, Venkataramani N, Ganguly U. Thermal budget reduction for back-end compatibility and control of resistance switching mechanism (unipolar to bipolar) in Pr1-xCa xMnO3 (PCMO) RRAM Materials Research Society Symposium Proceedings. 1507. DOI: 10.1557/Opl.2013.348  0.355
2013 Mandapati R, Borkar A, Srinivasan VSS, Bafna P, Karkare P, Lodha S, Rajendran B, Ganguly U. On pairing of bipolar RRAM memory with NPN selector based on set/reset array power considerations Ieee Transactions On Nanotechnology. 12: 1178-1184. DOI: 10.1109/Tnano.2013.2284508  0.425
2013 Mandapati R, Borkar AS, Srinivasan VSS, Bafna P, Karkare P, Lodha S, Ganguly U. The impact of n-p-n selector-based bipolar RRAM cross-point on array performance Ieee Transactions On Electron Devices. 60: 3385-3392. DOI: 10.1109/Ted.2013.2279553  0.396
2013 Mandapati R, Borkar A, Srinivasan VSS, Karkare PBP, Lodha S, Ganguly U. On pairing bipolar RRAM memory element with novel punch-through diode based selector: Compact modeling to array performance Proceedings - Winter Simulation Conference. 309-312. DOI: 10.1109/INEC.2013.6466032  0.304
2013 Lashkare S, Karkare P, Bafna P, Raju MVS, Srinivasan VSS, Lodha S, Ganguly U, Schulze J, Chopra S. A bipolar RRAM selector with designable polarity dependent on-voltage asymmetry 2013 5th Ieee International Memory Workshop, Imw 2013. 178-181. DOI: 10.1109/IMW.2013.6582128  0.336
2012 Srinivasan VSS, Chopra S, Karkare P, Bafna P, Lashkare S, Kumbhare P, Kim Y, Srinivasan S, Kuppurao S, Lodha S, Ganguly U. Punchthrough-diode-based bipolar RRAM selector by Si epitaxy Ieee Electron Device Letters. 33: 1396-1398. DOI: 10.1109/Led.2012.2209394  0.353
2012 Pavan Kishore V, Paramahans P, Sadana S, Ganguly U, Lodha S. Nanocrystal-based Ohmic contacts on n and p-type germanium Applied Physics Letters. 100. DOI: 10.1063/1.3700965  0.333
2010 Sandhya C, Oak AB, Chattar N, Ganguly U, Olsen C, Seutter SM, Date L, Hung R, Vasi J, Mahapatra S. Study of P/E cycling endurance induced degradation in SANOS memories under NAND (FN/FN) operation Ieee Transactions On Electron Devices. 57: 1548-1558. DOI: 10.1109/Ted.2010.2048404  0.47
2010 Guarini T, Bevan M, Ripley M, Ganguly U, Date L, Graoui H, Swenberg J. Nitric oxide rapid thermal nitridation for flash memory applications 18th International Conference On Advanced Thermal Processing of Semiconductors, Rtp 2010. 166-170. DOI: 10.1109/RTP.2010.5623805  0.325
2010 Ganguly U, Guarini T, Wellekens D, Date L, Cho Y, Rothschild A, Swenberg J. Impact of top-surface tunnel-oxide nitridation on flash memory performance and reliability Ieee Electron Device Letters. 31: 123-125. DOI: 10.1109/Led.2009.2036577  0.422
2009 Sandhya C, Oak AB, Chattar N, Joshi AS, Ganguly U, Olsen C, Seutter SM, Date L, Hung R, Vasi J, Mahapatra S. Impact of SiN composition variation on SANOS memory performance and reliability under NAND (FN/FN) operation Ieee Transactions On Electron Devices. 56: 3123-3132. DOI: 10.1109/Ted.2009.2033313  0.455
2009 Sandhya C, Ganguly U, Chattar N, Olsen C, Seutter SM, Date L, Hung R, Vasi JM, Mahapatra S. Effect of SiN on performance and reliability of charge trap flash (CTF) under Fowler-Nordheim tunneling program/erase operation Ieee Electron Device Letters. 30: 171-173. DOI: 10.1109/Led.2008.2009552  0.46
2009 Rothschild A, Breuil L, Van Den Bosch G, Richard O, Conard T, Franquet A, Cacciato A, Debusschere I, Jurczak M, Van Houdt J, Kittl JA, Ganguly U, Date L, Boelen P, Schreutelkamp R. O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory Essderc 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 272-275. DOI: 10.1109/ESSDERC.2009.5331523  0.333
2009 Sandhya C, Ganguly U, Apoorva B, Olsen C, Seutter S, Date L, Hung R, Vasi J, Mahapatra S. Influence of SiN composition on program and erase characteristics of SANOS-type flash memories 2009 2nd International Workshop On Electron Devices and Semiconductor Technology, Iedst '09. DOI: 10.1109/EDST.2009.5166111  0.372
2009 Sandhya C, Singh PK, Gupta S, Rohra H, Shivatheja M, Ganguly U, Hofmann R, Mukhopadhyay G, Mahapatra S, Vasi J. Recent advances in charge trap flash memories 2009 2nd International Workshop On Electron Devices and Semiconductor Technology, Iedst '09. DOI: 10.1109/EDST.2009.5166101  0.326
2007 Ganguly U, Lee C, Hou TH, Kan EC. Enhanced electrostatics for low-voltage operations in nanocrystal based nanotube/nanowire memories Ieee Transactions On Nanotechnology. 6: 22-28. DOI: 10.1109/Tnano.2006.888529  0.771
2007 Hou TH, Ganguly U, Kan EC. Fermi-level pinning in nanocrystal memories Ieee Electron Device Letters. 28: 103-106. DOI: 10.1109/Led.2006.889248  0.732
2006 Ganguly U, Hou T, Kan E. Effects of Metal Nanocrystals and Traps in Tunneling Rate Measurements in Metal Nanocrystal Based Carbon Nanotube Memory Mrs Proceedings. 963. DOI: 10.1557/Proc-0963-Q14-03  0.746
2006 Ganguly U, Hou TH, Kan EC. Process integration of composite high-k tunneling dielectric for nanocrystal based carbon nanotube memory Materials Research Society Symposium Proceedings. 961: 183-188. DOI: 10.1557/Proc-0961-O05-12  0.713
2006 Hou TH, Lee C, Narayanan V, Ganguly U, Kan EC. Design optimization of metal nanocrystal memory - Part II: Gate-stack engineering Ieee Transactions On Electron Devices. 53: 3103-3108. DOI: 10.1109/Ted.2006.885678  0.769
2006 Hou TH, Lee C, Narayanan V, Ganguly U, Kan EC. Design optimization of metal nanocrystal memory - Part I: Nanocrystal array engineering Ieee Transactions On Electron Devices. 53: 3095-3102. DOI: 10.1109/Ted.2006.885677  0.771
2006 Hou TH, Ganguly U, Kan EC. Programable molecular orbital states of C60 from integrated circuits Applied Physics Letters. 89. DOI: 10.1063/1.2420768  0.68
2006 Ganguly U, Narayanan V, Lee C, Hou TH, Kan EC. Three-dimensional analytical modeling of nanocrystal memory electrostatics Journal of Applied Physics. 99. DOI: 10.1063/1.2202695  0.739
2006 Guo J, Kan EC, Ganguly U, Zhang Y. High sensitivity and nonlinearity of carbon nanotube charge-based sensors Journal of Applied Physics. 99. DOI: 10.1063/1.2189024  0.608
2006 Ganguly U, Hou TH, Kan E. Effects of metal nanocrystals and traps in tunneling rate measurements in metal nanocrystal based carbon nanotube memory Materials Research Society Symposium Proceedings. 963: 295-300.  0.441
2005 Ganguly U, Lee C, Kan EC. Experimental observation of non-volatile charge injection and molecular redox in fullerenes C 60 and C 70 in an EEPROM-type device Materials Research Society Symposium Proceedings. 830: 355-361. DOI: 10.1557/Proc-830-D7.5  0.693
2005 Lee C, Ganguly U, Kan EC. Characterization of number fluctuations in gate-last metal nanocrystal nonvolatile memory array beyond 90nm CMOS technology Materials Research Society Symposium Proceedings. 830: 223-228. DOI: 10.1557/Proc-830-D5.4  0.699
2005 Ganguly U, Guo J, Kan EC, Zhang Y. Carbon nanotube based non-volatile memory and charge sensors Proceedings of Spie - the International Society For Optical Engineering. 6003. DOI: 10.1117/12.637612  0.667
2005 Lee C, Ganguly U, Narayanan V, Hou TH, Kim J, Kan EC. Asymmetric electric field enhancement in nanocrystal memories Ieee Electron Device Letters. 26: 879-881. DOI: 10.1109/Led.2005.859634  0.767
2005 Ganguly U, Kan EC, Zhang Y. Carbon nanotube-based nonvolatile memory with charge storage in metal nanocrystals Applied Physics Letters. 87. DOI: 10.1063/1.1999014  0.697
2004 Ganguly U, Krusius JP. Eabrication of ultraplanar aluminum mirror array by novel encapsulation CMP for microoptics and MEMS applications Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1799432  0.318
2004 Ganguly U, Krusius JP. Novel compensation chemical metal polishing for low dishing and high global planarity for ultra-planar die applications in micro-optics and micro-electro-mechanical systems Thin Solid Films. 460: 306-314. DOI: 10.1016/J.Tsf.2004.01.092  0.329
2003 Ganguly U, Lee C, Kan EC. Integration of fullerenes and carbon nanotubes with aggressively scaled CMOS gate stacks Materials Research Society Symposium - Proceedings. 789: 403-408. DOI: 10.1557/Proc-789-N16.3  0.684
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