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Xuemei Zheng, Ph.D. - Publications

Affiliations: 
2004 University of Rochester, Rochester, NY 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Cross XL, Zheng X, Cunningham PD, Hayden LM, Chromik S, Sojkova M, Štrbík V, Odier P, Sobolewski R. Pulsed-thz characterization of hg-based, high-temperature superconductors Ieee Transactions On Applied Superconductivity. 19: 3614-3617. DOI: 10.1109/Tasc.2009.2018122  0.493
2005 Hayden LM, Zheng X, Leahy-Hoppa MR, Sinyukov AM. Terahertz Science and Applications Based on Electro-optic Polymer Films Frontiers in Optics. DOI: 10.1364/Fio.2005.Swa1  0.399
2005 Marso M, Mikulics M, Adam R, Wu S, Zheng X, Camara I, Siebel F, Förster A, Güsten R, Kordoš P, Sobolewski R. Ultrafast Phenomena in Freestanding LT-GaAs Devices Acta Physica Polonica A. 107: 109-117. DOI: 10.12693/Aphyspola.107.109  0.609
2005 Zheng X, Sinyukov AM, Leahy-Hoppa MR, Hayden LM. Application of poled electro-optic polymer films in a gap-free broadband terahertz system Proceedings of Spie. 5935. DOI: 10.1117/12.613927  0.415
2005 Mikulics M, Adam R, Marso M, Forster A, Kordos P, Luth H, Wu S, Zheng X, Sobolewski R. Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates Ieee Photonics Technology Letters. 17: 1725-1727. DOI: 10.1109/Lpt.2005.851025  0.668
2004 Rey-De-Castro R, Wang D, Zheng X, Verevkin A, Sobolewski R, Mikulics M, Adam R, Kordoš P, Mycielski A. Subpicosecond Faraday effect in Cd 1-xMn xTe and its application in magneto-optical sampling Applied Physics Letters. 85: 3806-3808. DOI: 10.1063/1.1809280  0.688
2003 Zheng X, Xu Y, Sobolewski R, Adam R, Mikulics M, Siegel M, Kordos P. Femtosecond response of a free-standing LT-GaAs photoconductive switch. Applied Optics. 42: 1726-31. PMID 12665104 DOI: 10.1364/Ao.42.001726  0.696
2003 Mikulics M, Zheng X, Adam R, Sobolewski R, Kordoš P. High-speed photoconductive switch based on low-temperature GaAs transferred on SiO2-Si substrate Ieee Photonics Technology Letters. 15: 528-530. DOI: 10.1109/Lpt.2003.809264  0.666
2003 Mikulics M, Marso M, Kordoš P, Stanček S, Kováč P, Zheng X, Wu S, Sobolewski R. Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs Applied Physics Letters. 83: 1719-1721. DOI: 10.1063/1.1606879  0.544
2003 Zheng X, Wu S, Sobolewski R, Adam R, Mikulics M, Kordoš P, Siegel M. Electro-optic sampling system with a single-crystal 4-N,N-dimethylamino-4′-N′-methyl-4-stilbazolium tosylate sensor Applied Physics Letters. 82: 2383-2385. DOI: 10.1063/1.1565508  0.625
2002 Adam R, Mikulics M, Förster A, Schelten J, Siegel M, Kordoš P, Zheng X, Wu S, Sobolewski R. Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices Applied Physics Letters. 81: 3485-3487. DOI: 10.1063/1.1518159  0.708
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