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Mark A. Fanton, Ph.D. - Publications

Affiliations: 
2007 Pennsylvania State University, State College, PA, United States 
Area:
Materials Science Engineering, Inorganic Chemistry, Chemical Engineering
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46 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Watson BH, Brova MJ, Fanton M, Meyer RJ, Messing GL. Textured Mn-doped PIN-PMN-PT Ceramics: Harnessing Intrinsic Piezoelectricity for High-power Transducer Applications Journal of the European Ceramic Society. DOI: 10.1016/J.Jeurceramsoc.2020.07.071  0.361
2020 Watson BH, Brova MJ, Fanton MA, Meyer RJ, Messing GL. Densification and properties of oxygen sintered CuO-doped PIN-PMN-PT ceramics Journal of the European Ceramic Society. 40: 3956-3964. DOI: 10.1016/J.Jeurceramsoc.2020.04.040  0.325
2019 Watson BH, Brova MJ, Chang Y, Misture ST, Fanton MA, Meyer RJ, Messing GL. Low temperature reactive sintering of CuO-doped PIN-PMN-PT ceramics Journal of the European Ceramic Society. 39: 4719-4726. DOI: 10.1016/J.Jeurceramsoc.2019.06.030  0.374
2018 Sbrockey NM, Tompa GS, Lavelle R, Trumbull KA, Fanton MA, Snyder DW, Polcawich RG, Potrepka DM. Atomic layer deposition of PbTiO3 and PbZrxTi1-xO3 films using metal alkyl and alkylamide precursors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 36: 031509. DOI: 10.1116/1.5014030  0.371
2017 Chang Y, Watson B, Fanton M, Meyer RJ, Messing GL. Enhanced texture evolution and piezoelectric properties in CuO-doped Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 grain-oriented ceramics Applied Physics Letters. 111: 232901. DOI: 10.1063/1.5006288  0.35
2012 Redwing JM, Manning IC, Weng X, Eichfeld SM, Acord JD, Fanton MA, Snyder DW. Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films Materials Research Society Symposium Proceedings. 1396: 183-191. DOI: 10.1557/Opl.2012.215  0.673
2012 Weng X, Robinson JA, Trumbull K, Cavalero R, Fanton MA, Snyder D. Epitaxial graphene on SiC(0001̄): Stacking order and interfacial structure Applied Physics Letters. 100. DOI: 10.1063/1.3678021  0.379
2011 Fanton MA, Robinson JA, Puls C, Liu Y, Hollander MJ, Weiland BE, Labella M, Trumbull K, Kasarda R, Howsare C, Stitt J, Snyder DW. Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition. Acs Nano. 5: 8062-9. PMID 21905713 DOI: 10.1021/Nn202643T  0.398
2011 Robinson JA, Trumbull KA, Labella M, Cavalero R, Hollander MJ, Zhu M, Wetherington MT, Fanton M, Snyder DW. Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001) Applied Physics Letters. 98. DOI: 10.1063/1.3597356  0.372
2010 Robinson JA, Labella M, Trumbull KA, Weng X, Cavelero R, Daniels T, Hughes Z, Hollander M, Fanton M, Snyder D. Epitaxial graphene materials integration: effects of dielectric overlayers on structural and electronic properties. Acs Nano. 4: 2667-72. PMID 20415460 DOI: 10.1021/Nn1003138  0.36
2010 Robinson J, Weng X, Trumbull K, Cavalero R, Wetherington M, Frantz E, Labella M, Hughes Z, Fanton M, Snyder D. Nucleation of epitaxial graphene on SiC(0001). Acs Nano. 4: 153-8. PMID 20000439 DOI: 10.1021/Nn901248J  0.356
2010 Moon JS, Curtis D, Bui S, Marshall T, Wheeler D, Valles I, Kim S, Wang E, Weng X, Fanton M. Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers Ieee Electron Device Letters. 31: 1193-1195. DOI: 10.1109/Led.2010.2065792  0.334
2010 Weng X, Robinson JA, Trumbull K, Cavalero R, Fanton MA, Snyder D. Structure of few-layer epitaxial graphene on 6H -SiC(0001) at atomic resolution Applied Physics Letters. 97. DOI: 10.1063/1.3517505  0.352
2010 Manning IC, Weng X, Fanton MA, Snyder DW, Redwing JM. Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN Journal of Crystal Growth. 312: 1301-1306. DOI: 10.1016/J.Jcrysgro.2009.11.024  0.723
2010 Fanton MA, Robinson JA, Hollander M, Weiland BE, Trumbull K, Labella M. Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl Carbon. 48: 2671-2673. DOI: 10.1016/J.Carbon.2010.03.072  0.45
2009 Robinson JA, Wetherington M, Tedesco JL, Campbell PM, Weng X, Stitt J, Fanton MA, Frantz E, Snyder D, VanMil BL, Jernigan GG, Myers-Ward RL, Eddy CR, Gaskill DK. Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale. Nano Letters. 9: 2873-6. PMID 19719106 DOI: 10.1021/Nl901073G  0.359
2009 Maximenko SI, Freitas JA, Garces NY, Glaser ER, Fanton MA. Evolution of D1-defect center in 4H-SiC during high temperature annealing Materials Science Forum. 600: 429-432. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.429  0.411
2009 Garces NY, Glaser ER, Carlos WE, Fanton MA. Behavior of native defects in semi-insulating 4H-SiC after high temperature anneals and different cool-down rates Materials Science Forum. 600: 389-392. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.389  0.454
2009 Fanton MA, Robinson JA, Weiland BE, Moon J. 3C-SIC films grown on Si(111) substrates as a template for graphene epitaxy Ecs Transactions. 19: 131-135. DOI: 10.1149/1.3119537  0.404
2009 Gaskill DK, Jernigan GG, Campbell PM, Tedesco JL, Culbertson JC, VanMil BL, Myers-Ward RL, Eddy CR, Moon J, Curtis D, Hu M, Wong D, McGuire C, Robinson JA, Fanton MA, et al. Epitaxial graphene growth on SiC wafers Ecs Transactions. 19: 117-124. DOI: 10.1149/1.3119535  0.476
2009 Manning IC, Weng X, Acord JD, Fanton MA, Snyder DW, Redwing JM. Tensile stress generation and dislocation reduction in Si-doped Al x Ga1-x N films Journal of Applied Physics. 106. DOI: 10.1063/1.3160331  0.733
2009 Maximenko SI, Freitas JA, Garces NY, Glaser ER, Fanton MA. Evolution of deep defect centers in semi-insulating 4H-SiC substrates under high-temperature annealing Journal of Electronic Materials. 38: 551-556. DOI: 10.1007/S11664-008-0607-0  0.431
2008 Fanton MA, Weiland BE, Redwing JM. Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition Journal of Crystal Growth. 310: 4088-4093. DOI: 10.1016/J.Jcrysgro.2008.06.027  0.652
2007 Fanton MA, Weiland BE, Snyder DW, Redwing JM. Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition Journal of Applied Physics. 101. DOI: 10.1063/1.2399882  0.637
2007 Garces NY, Glaser ER, Carlos WE, Fanton MA. Behaviour of defects in semi-insulating 4H-SiC after ultra-high temperature anneal treatments Physica B: Condensed Matter. 401: 77-80. DOI: 10.1016/J.Physb.2007.08.117  0.488
2007 Fanton MA, Li Q, Polyakov AY, Skowronski M. Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport method Journal of Crystal Growth. 300: 314-318. DOI: 10.1016/J.Jcrysgro.2007.01.002  0.395
2007 Garces NY, Carlos WE, Glaser ER, Fanton MA. Identification of a three-site defect in semi-insulating 4H-SiC Journal of Electronic Materials. 36: 268-271. DOI: 10.1007/S11664-006-0043-Y  0.394
2006 Chung HJ, Huh SW, Polyakov AY, Nigam S, Li Q, Grim J, Skowronski M, Glaser ER, Carlos WE, Freitas JA, Fanton MA. Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition Materials Science Forum. 527: 625-628. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.625  0.486
2006 Carlos WE, Glaser ER, Garces NY, Shanabrook BV, Fanton MA. Thermal evolution of defects in semi-insulating 4H SiC Materials Science Forum. 527: 531-534. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.531  0.439
2006 Li Q, Polyakov AY, Skowronski M, Sanchez EK, Loboda MJ, Fanton MA, Bogart T, Gamble D, Smirnov NB, Makarov Y. Resistivity distribution in undoped 6H-SiC boules and wafers Materials Science Forum. 527: 51-54. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.51  0.491
2006 Huh SW, Polyakov AY, Chung HJ, Nigam S, Skowronski M, Glaser ER, Carlos WE, Fanton MA, Smirnov NB. Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition Materials Science Forum. 527: 497-500. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.497  0.519
2006 Fanton MA, Cavalero RL, Ray RG, Weiland BE, Everson W, Snyder D, Gamble R, Oslosky E. Growth of SiC boules with low boron concentration Materials Science Forum. 527: 47-50. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.47  0.398
2006 Nigam S, Chung HJ, Huh SW, Grim J, Polyakov AY, Fanton MA, Weiland B, Snyder DW, Skowronski M. Growth kinetics and polytype stability in halide chemical vapor deposition of SiC Materials Science Forum. 527: 27-30. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.27  0.447
2006 Polyakov AY, Fanton MA, Skowronski M, Chung HJ, Nigam S, Huh SW. Halide-CVD growth of bulk SiC crystals Materials Science Forum. 527: 21-26. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.21  0.498
2006 Fanton MA, Li Q, Polyakov AY, Cavalero RL, Ray RG, Weiland BE, Skowronski M. Hybrid physical-chemical vapor transport growth of SiC bulk crystals Materials Science Forum. 527: 103-106. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.103  0.369
2006 Carlos WE, Garces NY, Glaser ER, Fanton MA. Annealing of multivacancy defects in 4H-SiC Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.235201  0.403
2006 Huh SW, Chung HJ, Nigam S, Polyakov AY, Li Q, Skowronski M, Glaser ER, Carlos WE, Shanabrook BV, Fanton MA, Smirnov NB. Residual impurities and native defects in 6H-SiC bulk crystals grown by halide chemical-vapor deposition Journal of Applied Physics. 99. DOI: 10.1063/1.2150593  0.421
2006 Fanton MA, Cavalero RL, Weiland BE, Ray RG, Snyder DW, Gamble RD, Oslosky EJ, Everson WJ. Growth of 6H-SiC crystals with low boron concentration Journal of Crystal Growth. 287: 363-366. DOI: 10.1016/J.Jcrysgro.2005.11.045  0.413
2006 Fanton M, Snyder D, Weiland B, Cavalero R, Polyakov A, Skowronski M, Chung H. Growth of nitrogen-doped SiC boules by halide chemical vapor deposition Journal of Crystal Growth. 287: 359-362. DOI: 10.1016/J.Jcrysgro.2005.11.044  0.405
2006 Fanton MA, Li Q, Polyakov AY, Skowronski M, Cavalero R, Ray R. Effects of hydrogen on the properties of SiC crystals grown by physical vapor transport: Thermodynamic considerations and experimental results Journal of Crystal Growth. 287: 339-343. DOI: 10.1016/J.Jcrysgro.2005.11.022  0.435
2005 Li Q, Polyakov AY, Skowronski M, Fanton MA, Cavalero RC, Ray RG, Weiland BE. Properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1923181  0.46
2005 Li Q, Polyakov AY, Skowronski M, Sanchez EK, Loboda MJ, Fanton MA, Bogart T, Gamble RD. Nonuniformities of electrical resistivity in undoped 6H-SiC wafers Journal of Applied Physics. 97. DOI: 10.1063/1.1921340  0.445
2005 Chung HJ, Polyakov AY, Huh SW, Nigam S, Skowronski M, Fanton MA, Weiland BE, Snyder DW. Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition Journal of Applied Physics. 97. DOI: 10.1063/1.1865317  0.481
2005 Nigam S, Chung HJ, Polyakov AY, Fanton MA, Weiland BE, Snyder DW, Skowronski M. Growth kinetics study in halide chemical vapor deposition of SiC Journal of Crystal Growth. 284: 112-122. DOI: 10.1016/J.Jcrysgro.2005.06.027  0.426
2004 Fanton M, Skowronski M, Snyder DW, Chung HJ, Nigam S, Weiland B, Huh SW. Growth of Bulk SiC by Halide Chemical Vapor Deposition Materials Science Forum. 87-90. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.87  0.408
2004 Li Q, Polyakov AY, Skowronski M, Roth MD, Fanton MA, Snyder DW. Electrical nonuniformities and their impact on the electron mobility in semi-insulating SiC crystals Journal of Applied Physics. 96: 411-414. DOI: 10.1063/1.1739290  0.453
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