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Zhongda Li, Ph.D. - Publications

Affiliations: 
2013 Electrical Engineering Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Aiexandrov P, Bhalla A, Li Z, Li X, Bendel J, Dodge J. 650V SiC cascode: A breakthrough for wide-bandgap switches Materials Science Forum. 897: 673-676. DOI: 10.4028/Www.Scientific.Net/Msf.897.673  0.383
2015 Li Z, Waldron J, Chowdhury S, Zhao L, Detchprohm T, Wetzel C, Karlicek RF, Chow TP. High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal Physica Status Solidi (a) Applications and Materials Science. 212: 1110-1115. DOI: 10.1002/Pssa.201431660  0.582
2013 Takashima S, Li Z, Chow TP. Metal-oxide-semiconductor interface and dielectric properties of atomic layer deposited SiO2 on GaN Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jn24  0.61
2013 Li Z, Pala V, Chow TP. Avalanche breakdown design parameters in GaN Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jn05  0.584
2013 Takashima S, Li Z, Chow TP. Sidewall dominated characteristics on fin-gate AlGaN/GaN MOS-Channel-HEMTs Ieee Transactions On Electron Devices. 60: 3025-3031. DOI: 10.1109/Ted.2013.2278185  0.604
2013 Li Z, Chow TP. Design and simulation of 5-20-kV GaN enhancement-mode vertical superjunction HEMT Ieee Transactions On Electron Devices. 60: 3230-3237. DOI: 10.1109/Ted.2013.2266544  0.534
2013 Li Z, Waldron J, Detchprohm T, Wetzel C, Karlicek RF, Chow TP. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate Applied Physics Letters. 102. DOI: 10.1063/1.4807125  0.594
2012 Naik H, Li Z, Issa H, Tian Y, Chow TP. Study of high temperature microwave annealing on the performance of 4H-SiC MOS capacitors Materials Science Forum. 717: 769-772. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.769  0.68
2012 Marron T, Takashima S, Li Z, Chow TP. Impact of annealing on ALD Al 2O 3 gate dielectric for GaN MOS devices Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 907-910. DOI: 10.1002/Pssc.201100414  0.613
2012 Li Z, Zhang J, Chow TP. Study of CF 4 plasma treatment in drift region optimization of high-voltage GaN MOSC-HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 861-863. DOI: 10.1002/Pssc.201100413  0.565
2011 Li Z, Chow TP. Channel scaling of hybrid GaN MOS-HEMTs Solid-State Electronics. 56: 111-115. DOI: 10.1016/J.Sse.2010.11.009  0.583
2011 Niiyama Y, Li Z, Chow TP, Li J, Nomura T, Kato S. Over 1000 V/30 mA operation GaN-on-Si MOSFETs fabricated on Si substrates Solid-State Electronics. 56: 73-78. DOI: 10.1016/J.Sse.2010.10.002  0.433
2011 Li Z, Chow TP. Drift region optimization in high-voltage GaN MOS-gated HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2436-2438. DOI: 10.1002/Pssc.201001173  0.633
2011 Li Z, Naik H, Chow TP. Modeling and experimental study of MOS channel mobility of etched GaN on silicon substrate Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2433-2435. DOI: 10.1002/Pssc.201001172  0.671
2010 Naik H, Li Z, Chow TP. Experimental identification of extra type of charges at SiO2/SiC interface in 4H-SiC Materials Science Forum. 645: 519-522. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.519  0.681
2010 Li Z, Tang K, Chow TP, Sugimoto M, Uesugi T, Kachi T. Design and simulations of novel enhancement-mode high-voltage GaN vertical hybrid MOS-HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 1944-1948. DOI: 10.1002/Pssc.200983460  0.617
2009 Chow TP, Naik H, Li Z. Comparative study of 4H-SiC and 2H-GaN MOS capacitors and FETs Physica Status Solidi (a) Applications and Materials Science. 206: 2478-2486. DOI: 10.1002/Pssa.200925125  0.68
2000 Fedison JB, Li Z, Khemka V, Ramungul N, Chow TP, Ghezzo M, Kretchmer JW, Elasser A. Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers Materials Science Forum. 1367-1370. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1367  0.345
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