☰

Ruiyun Fu, Ph.D. - Publications

Affiliations: 
2013 Electrical Engineering University of South Carolina, Columbia, SC 
Area:
Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Fu R, Grekov A, Peng K, Santi E. Parameter extraction procedure for a physics-based power SiC Schottky diode model Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 545-552. DOI: 10.1109/Tia.2014.2304617  0.596
2012 Fu R, Grekov A, Hudgins J, Mantooth A, Santi E. Power SiC DMOSFET model accounting for nonuniform current distribution in JFET region Ieee Transactions On Industry Applications. 48: 181-190. DOI: 10.1109/Tia.2011.2175678  0.6
2011 Grekov AE, Chen Z, Fu R, Hudgins JL, Mantooth HA, Sheridan DC, Casady J, Santi E. Parameter extraction procedure for vertical SiC power JFET Ieee Transactions On Industry Applications. 47: 1862-1871. DOI: 10.1109/Tia.2011.2155018  0.619
2011 Chen Z, Grekov AE, Fu R, Hudgins JL, Mantooth HA, Sheridan DC, Casady J, Santi E. Model for power SiC vertical JFET with unified description of linear and saturation operating regimes Ieee Transactions On Industry Applications. 47: 1853-1861. DOI: 10.1109/Tia.2011.2154296  0.638
2011 Platania E, Chen Z, Chimento F, Grekov AE, Fu R, Lu L, Raciti A, Hudgins JL, Mantooth HA, Sheridan DC, Casady J, Santi E. A physics-based model for a SiC JFET accounting for electric-field- dependent mobility Ieee Transactions On Industry Applications. 47: 199-211. DOI: 10.1109/Tia.2010.2090843  0.617
Show low-probability matches.