| Year |
Citation |
Score |
| 2018 |
Ou Y, Harmon NJ, Odenthal P, Kawakami RK, Flatté ME, Johnston-Halperin E. Tuning spin dynamics and localization near the metal-insulator transition in Fe/GaAs heterostructures Physical Review B. 98. DOI: 10.1103/Physrevb.98.134444 |
0.73 |
|
| 2017 |
Xing W, Chen Y, Odenthal PM, Zhang X, Yuan W, Su T, Song Q, Wang T, Zhong J, Jia S, Xie XC, Li Y, Han W. Electric field effect in multilayer Cr
2
Ge
2
Te
6
: a ferromagnetic 2D material 2d Materials. 4: 024009. DOI: 10.1088/2053-1583/aa7034 |
0.319 |
|
| 2017 |
Odenthal P, Talmadge W, Gundlach N, Wang R, Zhang C, Sun D, Yu ZG, Vardeny ZV, Li YS. Spin-polarized exciton quantum beating in hybrid organic-inorganic perovskites Nature Physics. 13: 894-899. DOI: 10.1038/Nphys4145 |
0.547 |
|
| 2016 |
Ou YS, Chiu YH, Harmon NJ, Odenthal P, Sheffield M, Chilcote M, Kawakami RK, Flatté ME, Johnston-Halperin E. Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures. Physical Review Letters. 116: 107201. PMID 27015506 DOI: 10.1103/Physrevlett.116.107201 |
0.762 |
|
| 2015 |
Pu Y, Odenthal PM, Adur R, Beardsley J, Swartz AG, Pelekhov DV, Flatté ME, Kawakami RK, Pelz J, Hammel PC, Johnston-Halperin E. Ferromagnetic Resonance Spin Pumping and Electrical Spin Injection in Silicon-Based Metal-Oxide-Semiconductor Heterostructures. Physical Review Letters. 115: 246602. PMID 26705647 DOI: 10.1103/PhysRevLett.115.246602 |
0.797 |
|
| 2015 |
Ou YS, Chiu YH, Harmon NJ, Odenthal P, Sheffield M, Chilcote M, Kawakami RK, Flatté ME, Johnston-Halperin E. Tuning the dynamic exchange interaction in ferromagnet/semiconductor heterostructures Proceedings of Spie - the International Society For Optical Engineering. 9551. DOI: 10.1117/12.2188800 |
0.754 |
|
| 2015 |
Pu Y, Odenthal PM, Adur R, Beardsley J, Swartz AG, Pelekhov DV, Flatté ME, Kawakami RK, Pelz J, Hammel PC, Johnston-Halperin E. Ferromagnetic Resonance Spin Pumping and Electrical Spin Injection in Silicon-Based Metal-Oxide-Semiconductor Heterostructures Physical Review Letters. 115. DOI: 10.1103/PhysRevLett.115.246602 |
0.782 |
|
| 2014 |
Ma Q, Isarraraz M, Wang CS, Preciado E, Klee V, Bobek S, Yamaguchi K, Li E, Odenthal PM, Nguyen A, Barroso D, Sun D, von Son Palacio G, Gomez M, Nguyen A, et al. Postgrowth tuning of the bandgap of single-layer molybdenum disulfide films by sulfur/selenium exchange. Acs Nano. 8: 4672-7. PMID 24684434 DOI: 10.1021/Nn5004327 |
0.301 |
|
| 2014 |
Mann J, Ma Q, Odenthal PM, Isarraraz M, Le D, Preciado E, Barroso D, Yamaguchi K, von Son Palacio G, Nguyen A, Tran T, Wurch M, Nguyen A, Klee V, Bobek S, et al. 2-dimensional transition metal dichalcogenides with tunable direct band gaps: MoS₂(₁-x) Se₂x monolayers. Advanced Materials (Deerfield Beach, Fla.). 26: 1399-404. PMID 24339159 DOI: 10.1002/Adma.201304389 |
0.559 |
|
| 2014 |
Pinchuk IV, Odenthal PM, Ahmed AS, Amamou W, Goldberger JE, Kawakami RK. Epitaxial co-deposition growth of CaGe2 films by molecular beam epitaxy for large area germanane Journal of Materials Research. 29: 410-416. DOI: 10.1557/Jmr.2014.2 |
0.545 |
|
| 2014 |
Sachs R, Lin Z, Odenthal P, Kawakami R, Shi J. Direct comparison of graphene devices before and after transfer to different substrates Applied Physics Letters. 104. DOI: 10.1063/1.4862063 |
0.61 |
|
| 2013 |
Chen JR, Odenthal PM, Swartz AG, Floyd GC, Wen H, Luo KY, Kawakami RK. Control of Schottky barriers in single layer MoS2 transistors with ferromagnetic contacts. Nano Letters. 13: 3106-10. PMID 23746085 DOI: 10.1021/Nl4010157 |
0.798 |
|
| 2013 |
Ma Q, Odenthal PM, Mann J, Le D, Wang CS, Zhu Y, Chen T, Sun D, Yamaguchi K, Tran T, Wurch M, McKinley JL, Wyrick J, Magnone K, Heinz TF, et al. Controlled argon beam-induced desulfurization of monolayer molybdenum disulfide. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 252201. PMID 23708055 DOI: 10.1088/0953-8984/25/25/252201 |
0.562 |
|
| 2013 |
Swartz AG, McCreary KM, Han W, Wong JJI, Odenthal PM, Wen H, Chen JR, Kawakami RK, Hao Y, Ruoff RS, Fabian J. Integrating MBE materials with graphene to induce novel spin-based phenomena Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4803843 |
0.749 |
|
| 2013 |
Swartz AG, Chen JR, McCreary KM, Odenthal PM, Han W, Kawakami RK. Effect of in situ deposition of Mg adatoms on spin relaxation in graphene Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.075455 |
0.753 |
|
| 2013 |
Pu Y, Beardsley J, Odenthal PM, Swartz AG, Kawakami RK, Hammel PC, Johnston-Halperin E, Sinova J, Pelz JP. Correlation of electrical spin injection and non-linear charge-transport in Fe/MgO/Si Applied Physics Letters. 103. DOI: 10.1063/1.4812980 |
0.786 |
|
| 2012 |
Swartz AG, Odenthal PM, Hao Y, Ruoff RS, Kawakami RK. Integration of the ferromagnetic insulator EuO onto graphene. Acs Nano. 6: 10063-9. PMID 23083411 DOI: 10.1021/Nn303771F |
0.771 |
|
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